KR20220009913A - Chemical-mechanical polishing pad including protruding pattern having indentation and method for preparing the same - Google Patents

Abstract

Provided are a chemical-mechanical polishing pad capable of reducing a manufacturing cost while improving a polishing rate by including a protruding pattern having indentations, and a manufacturing method thereof. The manufacturing method of the polishing pad includes a step of forming a pattern layer including a plurality of patterns spaced apart from each other, as a step of forming the pattern layer disposed on a support layer. The step of forming the pattern layer includes the following steps of: filling a curable composition into a recessed pattern of a pattern mold; and curing the curable composition filled in the recessed pattern to form the protruding pattern. A volume of the curable composition filled in any recessed pattern is smaller than a spatial volume of the recessed pattern.

Description

Chemical-mechanical polishing pad comprising a protruding pattern having indentations and a method for manufacturing the same

The present invention relates to a polishing pad including a protruding pattern formed on a polishing surface and a method for manufacturing the same. Specifically, the present invention relates to a chemical-mechanical polishing pad and a method for manufacturing a polishing pad capable of reducing manufacturing cost while improving a polishing rate by including a protruding pattern having indentations.

In general, a chemical-mechanical polishing (CMP) process is used to manufacture high-integration circuit devices such as semiconductors and displays. In the chemical-mechanical polishing process, a polishing target substrate, for example, a wafer substrate, is brought into pressure contact with a rotating polishing pad, and polishing is performed using a chemical reaction with a slurry at the same time. The chemical-mechanical polishing process mainly aims to planarize the surface to be polished or to remove unnecessary layers.

The characteristics of the polishing process may be expressed in terms of a removal rate (RR), non-uniformity (NU), scratch of the polishing object, and planarization of the polishing object. Among them, the polishing rate is one of the most important characteristics of the polishing process, and the main factors are the polishing surface morphology (topography) of the polishing pad, the slurry composition, and the temperature of the polishing platen.

A conventional polishing apparatus is configured to include a conditioner to maintain the surface of the polishing pad, that is, the polishing surface characteristics. The conditioner may be positioned eccentrically with respect to the axis of rotation of the polishing pad, and the conditioner may be configured to be in contact with the polishing surface of the polishing pad. Cutting particles made of diamond or the like are disposed on a surface of the conditioner in contact with the polishing pad, and an uneven structure may be formed or maintained on the surface of the polishing pad by the cutting particles. That is, in the course of the polishing process, the conditioner continuously polishes the polishing surface of the polishing pad to maintain the surface roughness of the polishing pad at a certain level or more, and the polishing apparatus including the polishing pad has an approximately constant polishing rate. can be made to indicate

However, as the polishing process is performed, the polishing pad is continuously worn, and the uneven structure of the surface and the uneven surface roughness may occur. If the surface roughness is too small, there is a problem in that the actual contact area actually in contact with the substrate to be polished increases or the flow of the polishing liquid slurry becomes difficult. On the other hand, if the surface roughness is excessively large, the required flatness may not be satisfied due to non-uniform contact with the polishing target substrate, and scratches may occur on the polishing target. The unevenness of the polishing surface is a factor that shortens the life and durability of the polishing pad.

In particular, as pattern substrates such as semiconductors are highly integrated, the above problems may be exacerbated. For example, in order to form a shallow trench isolation (STI) structure for high integration of semiconductors, a degree of planarization at the level of global planarization is required, and the polishing process may directly affect semiconductor properties.

However, in the case of a conventional polishing pad, there is a problem in that it is vulnerable to defects such as dishing and erosion due to durability problems. can cause Therefore, there is an urgent need for the development of a polishing pad applicable to a case requiring a high level of planarity, such as a shallow trench isolation process.

Accordingly, an object of the present invention is to provide a polishing pad capable of exhibiting a stable morphology or topography of a polishing surface despite the continued polishing process. Another object of the present invention is to provide a polishing pad that has excellent polishing rate and uniformity, and can improve the use efficiency of the polishing liquid slurry.

Further, it is an object to provide a polishing pad capable of controlling the polishing rate according to a polishing object from a factor newly discovered as being capable of affecting the polishing rate.

At the same time, it is to provide a polishing pad that can be manufactured at a lower cost in spite of the improved polishing properties as described above.

Another object to be solved by the present invention is to provide a method capable of manufacturing a polishing pad including a porous protruding pattern having porosity in a more convenient way.

The problems of the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

A polishing pad according to an embodiment of the present invention for solving the above problems includes a support layer; and a patterned layer disposed on the support layer, the patterned layer including a base and a plurality of protruding patterns disposed on the base, wherein, in a plan view, any of the protruding patterns has indentations.

The indentation portion of the protrusion pattern may be located near an extension line of two straight sides in a plan view.

In addition, the vertex of the protrusion pattern having the indentation may be formed by meeting a curve formed by a straight edge and the indentation in a plan view.

An angle between the tangent of the curve and the straight edge at the vertex of a certain protrusion pattern may form an acute angle.

Also, the radius of curvature of the indentation may be in the range of 5 μm to 50 μm.

The radius of curvature of the indentation may be in the range of 0.3 times to 0.8 times the minimum width of the protrusion pattern.

Also, the minimum width of the protrusion pattern may be in the range of 20 μm to 120 μm.

In a plan view, at least some of the indentations may include those that are larger than a semicircle and have an arc shape.

In a plan view, the actual polishing area occupied by the plurality of protruding patterns per unit area may be 5% to 35%.

The height of the protrusion pattern may be about 0.01 mm or more and 1.5 mm or less, and the width of the indentation in the height direction may be 50% or more and 100% or less of the height of the protrusion pattern.

Also, the base may be at least partially exposed by the indentation of the protrusion pattern.

The indentation portion contributes to an increase in the perimeter of the second protrusion pattern in a plane, and the perimeter of the polishing surface formed by the plurality of protrusion patterns per unit area may be in the range of ^{1.0mm/mm 2} to 50.0mm/mm ² .

In addition, the circumferential length of the second protrusion pattern may be 2 to 15 times the minimum width of the second protrusion pattern.

In a cross-sectional view, the protruding pattern may have a concave side formed by an indentation.

In addition, the plurality of protrusion patterns include a first protrusion pattern and a second protrusion pattern spaced apart from each other, and in a plan view, an edge of the second protrusion pattern is substantially different from the first protrusion pattern except that an edge of the second protrusion pattern has an indentation portion. It may have the same shape.

A circumferential length of the second protruding pattern may be in a range of 1.2 times to 3.5 times a circumferential length of the first protruding pattern.

Furthermore, the plurality of protrusion patterns may further include a third protrusion pattern, wherein an edge of the third protrusion pattern has substantially the same shape as that of the first protrusion pattern except that an edge of the third protrusion pattern has an indentation, and the third protrusion pattern and the third protrusion pattern The two protrusion patterns may have substantially the same shape as each other except that the positions of the indentations are different.

A method of manufacturing a polishing pad according to an embodiment of the present invention for solving the above another problem is a step of forming a pattern layer disposed on a support layer, the pattern layer including a plurality of protruding patterns spaced apart from each other to form a pattern layer Including the steps of, forming the pattern layer, filling the curable composition in the recessed pattern of the pattern mold; and curing the curable composition filled in the recessed pattern to form the protruding pattern.

At this time, the volume of the curable composition filled in any recessed pattern may be smaller than the spatial volume of the recessed pattern.

The step of filling or curing the curable composition may be performed under a condition of 70% or more of relative humidity.

In addition, the plurality of protrusion patterns may include a first protrusion pattern and a second protrusion pattern.

In a plan view, the first protrusion pattern and the second protrusion pattern, except that the first protrusion pattern has an indentation at a position, and the second protrusion pattern does not have an indentation at a position corresponding to the position. The shape of may be substantially the same shape.

The maximum depth of the depression pattern may be about 0.5 to 2.5 times the minimum width of the depression pattern.

A polishing apparatus according to an embodiment of the present invention for solving the another problem is a polishing platen configured to rotate; and a polishing pad disposed on the polishing platen.

Details of other embodiments are included in the detailed description.

According to embodiments of the present invention, it is possible to stably maintain the surface roughness or topography of the polished surface despite the continuous polishing process, and to improve the polishing rate and polishing uniformity. In addition, even if the surface of the object to be polished has a fine curve, it is possible to follow the curve in the vertical direction along the curve of the surface of the object, thereby improving the polishing rate and polishing uniformity.

In addition, the polishing rate can be controlled from factors such as the pattern structure of the polishing pad surface, the length of the pattern, and the contact surface of the pattern, and the use of the slurry through the shape and arrangement of the unique protruding pattern according to the embodiments of the present invention can improve efficiency

Moreover, as described above, while the elements such as the structure, length and/or contact area of the protruding pattern are configured to satisfy within a predetermined range, the protruding pattern has an indentation of a specified size, so that the indentation contributes to an increase in the circumferential length of the protruding pattern. can Accordingly, it is possible to achieve simplification of process equipment for forming the protruding pattern, and contribute to reduction in manufacturing cost of the polishing pad and the polishing apparatus.

Effects according to the embodiments of the present invention are not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a perspective view of a polishing apparatus according to an embodiment of the present invention.
FIG. 2 is a plan layout of the polishing pad of FIG. 1 ;
3 is an enlarged perspective view showing an enlarged portion A of FIG. 2 .
4 is a plan view illustrating an arrangement of the protrusion pattern of FIG. 2 .
FIG. 5 is an enlarged perspective view showing an enlarged protrusion pattern of FIG. 2 .
6 is a cross-sectional view taken along line BB′ of FIG. 3 .
7 is a schematic diagram illustrating a state in which the polishing pad of FIG. 2 is in contact with a polishing target substrate, and FIG. 8 is a schematic diagram compared with FIG. 7 .
9 is another schematic diagram illustrating a state in which the polishing pad of FIG. 2 is in contact with a polishing target substrate, and FIG. 10 is a schematic diagram compared with FIG. 9 .
11 is a cross-sectional view of a polishing pad according to another embodiment of the present invention.
12 to 14 are cross-sectional views of a polishing pad according to still other embodiments of the present invention, respectively.
15 to 19 are plan views each illustrating a protrusion pattern of a polishing pad according to still another exemplary embodiment of the present invention.
20 is a schematic diagram illustrating a method of manufacturing a polishing pad according to an embodiment of the present invention.
21 to 23 are images of a polishing pad according to Preparation Example 1.
24 to 27 are images showing results according to Experimental Example 1.
28 is an image showing the results according to Experimental Example 2.
29 to 31 are images showing results according to Experimental Example 3.
32 is an image showing the results according to Experimental Example 4.
33 is an image of a polishing pad according to Preparation Example 2.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only the embodiments allow the disclosure of the present invention to be complete, and those of ordinary skill in the art to which the present invention pertains. It is provided to fully inform the person of the scope of the invention, and the present invention is only defined by the scope of the claims. That is, various changes may be made to the embodiments presented by the present invention. It should be understood that the embodiments described below are not intended to limit the embodiments, and include all modifications, equivalents, and substitutes thereto.

The size, thickness, width, length, etc. of the components shown in the drawings may be exaggerated or reduced for convenience and clarity of description, so that the present invention is not limited to the illustrated form.

Unless otherwise defined, all terms (including technical and scientific terms) used herein may be used with the meaning commonly understood by those of ordinary skill in the art to which the present invention belongs. In addition, terms defined in a commonly used dictionary are not to be interpreted ideally or excessively unless clearly defined in particular.

Spatially relative terms 'above', 'upper', 'on', 'below', 'beneath', 'lower', etc. As illustrated, it may be used to easily describe a correlation between one element or components and another device or components. Spatially relative terms should be understood as terms including different orientations of the device when used in addition to the orientations shown in the drawings. For example, when an element shown in the drawing is turned over, an element described as 'below or beneath' of another element may be placed 'above' of the other element. Accordingly, the exemplary term 'down' may include both the direction of the bottom and the top.

In this specification, 'and/or' includes each and every combination of one or more of the recited items. The singular also includes the plural, unless the phrase specifically states otherwise. As used herein, 'comprises' and/or 'comprising' does not exclude the presence or addition of one or more other components in addition to the stated components. Numerical ranges indicated using 'to' indicate numerical ranges including the values stated before and after them as lower and upper limits, respectively. 'About' or 'approximately' means a value or numerical range within 20% of the value or numerical range recited thereafter.

In this specification, the first direction (X) means an arbitrary direction in a plane, and the second direction (Y) means another direction that intersects or is perpendicular to the first direction (X) in the plane. In addition, the third direction Z means a direction perpendicular to the plane. Unless otherwise defined, 'plane' means a plane to which the first direction (X) and the second direction (Y) belong. In addition, unless otherwise defined, 'overlapping' means that the components overlap in the third direction (Z) in the plane view.

In this specification, unless otherwise defined, a 'planar viewpoint' refers to a viewpoint from which a plurality of protrusion patterns are arranged. In addition, the 'cross-section view' refers to a cross-sectional view in which the base and the protrusion pattern are stacked.

As used herein, the term 'protrusion pattern' refers to a structure having a shape protruding from a certain reference plane. The planar arrangement of the pattern may be regular or irregular. A plurality of protrusion patterns are gathered to form a cluster pattern of a specific shape, and even when the cluster patterns are substantially regularly arranged, the term protrusion pattern means any one of a plurality of protrusion patterns forming one cluster pattern can be used as

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view of a polishing apparatus according to an embodiment of the present invention.

Referring to FIG. 1 , the polishing apparatus 1 according to the present embodiment includes a polishing platen 10 connected to a rotating shaft and a polishing pad 11 disposed on the polishing platen 10 , and the polishing pad 11 . ) may further include a nozzle 60 and/or a carrier 40 for supplying the slurry 70 on the polishing surface. Although the present invention is not limited thereto, in the polishing apparatus 1 according to the present embodiment, a conditioner for adjusting the surface roughness of the polishing surface of the polishing pad 11 may be unnecessary.

The abrasive platen 10 is configured in a substantially circular plate shape and can rotate, for example, in a counterclockwise direction. Further, the polishing platen 10 can stably support the polishing pad 11 thereon. That is, the abrasive platen 10 may provide a function such as a rotary table.

The polishing pad 11 may be disposed on the polishing platen 10 . An upper surface of the polishing pad 11 in contact with the polishing target substrate 50 may form a polishing surface. Although not shown in FIG. 1 , fine-sized patterns and/or trenches may be formed on the polishing surface, that is, the upper surface of the polishing pad 11 . The shape, morphology or topology of the polishing surface of the polishing pad 11 will be described later in detail with FIG. 2 and the like.

The polishing target substrate 50 may be in a fixed position by being eccentric with the rotation axis of the polishing platen 10 or the rotation axis of the polishing pad 11 . The polishing target substrate 50 may be in a state of being fixed by the carrier 40 connected to the rotation shaft and rotating by the carrier 40 . The rotation direction of the polishing target substrate 50 may be the same as the rotation direction of the polishing pad 11 , but the present invention is not limited thereto, and the rotation direction of the polishing target substrate 50 and the polishing pad 11 is opposite. It could be a direction. The polishing target substrate 50 to be polished in contact with the polishing pad 11 may be, for example, a semiconductor wafer substrate or a display substrate, but the present invention is not limited thereto.

The nozzle 60 may be disposed on the polishing pad 11 to supply the slurry 70 to the polishing surface of the polishing pad 11 . In the present specification, the term 'slurry' may be used to have substantially the same meaning as abrasive liquid or abrasive particles. The slurry 70 flows on the polishing surface of the polishing pad 11 by centrifugal force generated by the rotation of the polishing pad 11 , and at least a portion of the slurry 70 penetrates between the polishing pad 11 and the polishing target substrate 50 . It can contribute to polishing through chemical reactions.

Hereinafter, the polishing pad 11 will be described in more detail with further reference to FIGS. 2 to 6 . FIG. 2 is a plan layout of the polishing pad of FIG. 1 ; 3 is an enlarged perspective view showing an enlarged portion A of FIG. 2 . 4 is a plan view illustrating an arrangement of the protrusion pattern of FIG. 2 . FIG. 5 is an enlarged perspective view showing an enlarged protrusion pattern of FIG. 2 . 6 is a cross-sectional view taken along line B-B' of FIG. 3 . For convenience of illustration, FIG. 3 does not represent the indentation portion C of the protrusion pattern 230 .

2 to 6 , the polishing pad 11 according to the present embodiment may have a substantially circular shape in a plan view. Also, the polishing pad 11 may include a support layer 100 and a pattern layer 200 disposed on the support layer 100 . The upper surface of the protrusion pattern 230 of the pattern layer 200 may form a polishing surface as a whole. The support layer 100 and the pattern layer 200 may each include a material having a predetermined flexibility.

In an exemplary embodiment, the strength, rigidity, and/or hardness of the support layer 100 may be less than that of the pattern layer 200 . That is, the support layer 100 may have greater flexibility and a smaller modulus of elasticity than the pattern layer 200 . The elastic modulus is meant to include a loss modulus and/or a storage modulus.

Through this, when the surface of the polishing target substrate 50 has a fine curve, when the planarization characteristic required for the polishing target substrate 50 is high, and/or even when the polishing pad 11 has a fine curve, the polishing pad The protrusion pattern 230 formed on the upper surface of (11) may be in close contact along the curvature of the polishing target substrate 50 to perform polishing. That is, the polishing pad 11 may follow the surface of the polishing target substrate 50 . This will be described later in conjunction with FIG. 7 and the like.

The support layer 100 and the pattern layer 200 may be made of the same or different materials. As a non-limiting example, the support layer 100 and the pattern layer 200 may include substantially the same polymer material. Examples of the polymer material include (poly) urethane (PU), (poly) (meth) acrylate ((poly) (meth) acrylate), (poly) epoxy, acrylo Nitrile butadiene styrene (ABS), (poly) etherimide ((poly) etherimide), (poly) amide ((poly) amide), (poly) propylene ((poly) propylene), (poly) butadiene ((poly) butadiene ), polyalkylene oxide, (poly) ester ((poly) ester), (poly) isoprene ((poly) isoprene), (poly) styrene ((poly) styrene), (poly) ethylene ( (poly)ethylene), (poly)carbonate ((poly)carbonate), polyfluorene, polyphenylene, polyazulene, polypyrene, polynaphthalene, poly-p-phenylenevinylene, polypyrrole, polycarbazole, poly indole, polyaniline, or combinations thereof.

The rigidity of the support layer 100 and the pattern layer 200 may be controlled through the degree of crosslinking of the polymer material, but the present invention is not limited thereto.

The support layer 100 may have a substantially circular shape in a plan view, and may provide a function of supporting the pattern layer 200 thereon. The lower limit of the minimum thickness T1 of the support layer 100 may be about 1 mm or more, or about 2 mm or more, or about 3 mm or more. When the thickness of the support layer 100 is smaller than the above range, the support layer 100 may not exhibit sufficient elasticity or strain, and it may be difficult for the polishing pad 11 to follow the curve of the substrate 50 to be polished. The upper limit of the thickness T1 of the support layer 100 is not particularly limited, but may be, for example, about 5 mm or less, or about 4 mm or less. In the present specification, when a plurality of upper and lower limits of a numerical range are described, the numerical range disclosed herein is a numerical range between any upper limit arbitrarily selected from among a plurality of upper limits and a lower limit of any one arbitrarily selected from among a plurality of lower limits. should be understood as disclosing.

The pattern layer 200 may be disposed on the support layer 100 . In an exemplary embodiment, the pattern layer 200 may be directly disposed on the support layer 100 without a separate bonding layer. The pattern layer 200 may include a base 210 and a plurality of protruding patterns 230 disposed on the base 210 . A plurality of protrusion patterns 230 may be spaced apart from each other on the base 210 . Although not shown in the drawings, the pattern layer 200 may have pores dispersed therein. In addition, the support layer 100 may also have pores dispersed therein. The average particle size of the pores of the support layer 100 may be larger than the average particle size of the pores of the pattern layer 200 .

The base 210 and the protrusion pattern 230 are integrally and continuously formed without a physical boundary, and may be made of the same material. In another embodiment, the base 210 and the protrusion pattern 230 may have a physical boundary and may be made of different materials. In this case, the strength, rigidity, and/or hardness of the base 210 may be smaller than that of the protrusion pattern 230 .

The base 210 may be a portion overlapping the plurality of protruding patterns 230 spaced apart from each other in the third direction (Z). In addition, the base 210 may be a portion that occupies most of an area corresponding to the polishing pad 11 in a plan view and covers the support layer 100 . Alternatively, the base 210 may mean the remaining portion of the pattern layer 200 excluding the protrusion pattern 230 to be described later.

The lower limit of the maximum thickness T2 of the base 210 may be about 0.01 mm or more, or about 0.05 mm or more, or about 0.1 mm or more, or about 0.5 mm or more, or about 1.0 mm or more. When the thickness of the base 210 is smaller than the above range, it may be difficult for the polishing pad 11 to follow the curve of the substrate 50 to be polished. The upper limit of the thickness T2 of the base 210 is not particularly limited, but may be, for example, about 3.0 mm or less, or about 2.5 mm or less, or about 2.0 mm or less, or about 1.5 mm or less.

The plurality of protrusion patterns 230 may be disposed on one base 210 . The protrusion pattern 230 may be a portion that forms the uppermost level of the polishing pad 11 and forms a polishing surface. That is, even when the pattern layer 200 has a multi-stage structure, the protruding pattern 230 may mean a protruding portion contributing to actual polishing.

In an exemplary embodiment, the protrusion pattern 230 may have a substantially rectangular shape in a plan view, but the present invention is not limited thereto. In addition, the protrusion pattern 230 may have a substantially rectangular shape, and may not overlap the trenches 300 to be described later in the third direction (Z). For example, the protrusion pattern 230 is not formed at a position overlapping the trench 300 , or the already formed protrusion pattern 230 may be removed and processed using a laser or the like.

In addition, although FIG. 2 illustrates a state in which the plurality of protrusion patterns 230 are substantially regularly arranged in a plan view, in another embodiment, the plurality of protrusion patterns 230 are substantially irregularly arranged, or arbitrary may have a random arrangement of In another embodiment, the plurality of protrusion patterns 230 may be gathered to form one cluster pattern, and the cluster patterns may be arranged substantially regularly. In this case, the plurality of protrusion patterns 230 in a certain cluster pattern may be arranged with regularity.

In the present embodiment, the protrusion patterns 230 may be repeatedly arranged along at least two directions to form a regular arrangement. For example, the protrusion patterns 230 may be repeatedly arranged with substantially the same spacing along the first direction X and the second direction Y to be approximately arranged in a matrix.

The size of the protrusion pattern 230 may be a major factor affecting a polishing rate, a polishing non-uniformity NU, and the like of the polishing pad 11 . The inventors of the present invention have completed the present invention by confirming that the polishing rate can be controlled by the circumferential length and/or area of the protruding pattern 230 .

In an exemplary embodiment, in a plan view, the polished area occupied by the protruding pattern 230 , or the actual polished area, that is, the area occupied by the upper surface of the protruding pattern 230 , is about 1.0% or more and 80% or less of the total area, or about 1.0% or more and 70% or less, or about 1.0% or more 60% or less, or about 1.0% or more 50% or less, or about 1.0% or more 45.0% or less, or about 1.0% or more 40% or less, or about 1.0% or more 35 % or less, or about 1.0% or more and 30% or less, or about 3.0% or more and 30.0% or less, or about 5.0% or more and 30.0% or less, or about 10.0% or more and 30.0% or less. That is, the lower limit of the polishing area with respect to the total area may be about 1.0%, or about 3.0%, or about 5.0%. The upper limit of the abrasive area to the total area may be about 80%, or about 70%, or about 60%, or about 50%, or about 45%, or about 40%, or about 35%, or about 30%. .

As used herein, the term 'polishing area' or 'actual polishing area' refers to an area where the upper end of the protrusion pattern 230 comes into contact with the substrate 50 to be polished and contributes to polishing. That is, it means an area occupied by a portion forming the maximum height in the pattern layer 200 of the polishing pad 11 . The polishing area ratio may be calculated as the sum of the upper areas of the protruding patterns 230 with respect to the total area of the polishing pad 11 . The sum of the areas may also be used in substantially the same sense.

In addition, as will be described later, the protrusion pattern 230 may have an indentation portion C that contributes to an increase in the peripheral length of the edge. In this case, the area occupied by the above-described protrusion pattern 230 may mean an area excluding the area subtracted by the indentation part C. As shown in FIG. In an embodiment in which the protrusion pattern 230 has pores therein, the area occupied by the protrusion pattern 230 may mean an area excluding the area occupied by pores having a fine size. That is, the area of the pores can be neglected.

For example, as shown in FIG. 4 , when the planar shape of a certain protrusion pattern 230 is an approximately square shape with one side length W, the planar area occupied by the protrusion pattern 230 is W×W It may be an area excluding the area occupied by the one or more indentations C.

For example, the area of the first protrusion pattern 230a without the indentation may be substantially equal to approximately W×W. On the other hand, the area occupied by the second protrusion pattern 230b and the third protrusion pattern 230c having four indentations may be slightly smaller than W×W.

As another example, when the planar area occupied by any one protrusion pattern 230 is expressed as S, the ratio of the polishing area to the total planar area of the polishing pad 11 may be expressed as S×n. have. Here, n is the total number of protrusion patterns 230 included in the polishing pad 11 .

As another example, the ratio of the polishing area may be expressed as an area occupied by the protrusion patterns 230 belonging to the verification target area with respect to an arbitrary verification target area of the polishing pad 11 . In this case, when the area to be checked (eg, inspection area) is the x-axis and the area occupied by the protrusion pattern 230 in that case is the y-axis, the ratio of the polishing area is expressed as a slope of the graph. may be

When the above-described ratio (%) of the polishing area is within the above range, an excellent polishing rate is exhibited, and polishing characteristics such as a polishing rate can be controlled by changing the arrangement, shape, and/or size of the protruding pattern 230 . In addition, when the polishing area is too large, the polishing rate may decrease again due to the reduction of the actual contact pressure and the restriction of the flow of the slurry.

On the other hand, in a unit area of a planar view, for example, 1 mm ² , the lower limit of the perimeter length per unit area formed by the planar perimeter of the protrusion pattern 230 is about 1.0 mm/mm ² or more, or about 3.0 mm/mm ² or more, or about 5.0 mm/mm ² or greater, or about 8.0 mm/mm ^{2 or} greater.

In addition, the upper limit of the circumferential length per unit area formed by the planar circumference of the protruding pattern 230 is about 250.0 mm/mm ² or less, or about 200.0 mm/mm ² or less, or about 150.0 mm/mm ² or less, or about 100.0 or less. mm / mm ² or less, preferably about 50.0mm / mm ² or less, preferably about 30.0mm / mm ² or less, preferably about 24.0mm / mm ² or less, preferably about 20.0mm / mm ² or less, preferably about 16.0mm / mm ² or less , or about 10.0 mm/mm ² or less.

As used herein, the term 'perimeter length per unit area' refers to an outer length formed by the polishing area of the protruding patterns 230 per ^{unit area (1 mm 2 ).}

For example, if it is assumed that the entire quadrangle shown in FIG. 4 has ^{an area of 1 mm 2} , the perimeter length per unit area may be expressed as four protruding patterns×L. Here, L denotes a perimeter length formed by any one protrusion pattern 230 . For example, L may be somewhat larger than 4 sides×W. This is because, as described above, the indentation portion C causes an increase in the circumferential length of the protruding pattern 230 . That is, in the present specification, the circumferential length of the protrusion pattern 230 is not only the outer edge, but also the circumference of the closed curve formed by the edge including the curve formed by the indentation C having an arbitrary shape on the plane. It can mean length.

As another example, the perimeter length per unit area may be expressed as a perimeter length formed by the protrusion pattern 230 belonging to the confirmation object area with respect to an arbitrary confirmation object area of the polishing pad 11 . In this case, when the area to be checked (eg, inspection area) is the x-axis and the total perimeter length formed by the protrusion pattern 230 in that case is the y-axis, the perimeter per unit area is the slope of the graph may be expressed as

When the above-described peripheral length per unit area (mm/mm ² ) is in the above range, an excellent polishing rate may be exhibited. This will be described later along with experimental examples and the like.

In an exemplary embodiment in which the protrusion pattern 230 is substantially rectangular in plan view, the maximum width Wmax of the protrusion pattern 230 may be formed in a substantially diagonal direction. On the other hand, the minimum width W of the protrusion pattern 230 may correspond to the length of any one side. In the present specification, the minimum width of the protrusion pattern means the width of the portion having the smallest length among the length, width or width on a plane of any one protrusion pattern 230 that is physically separated and spaced apart from other protrusion patterns. do.

In addition, the minimum width means the minimum length required to be controlled in the process and/or process equipment for forming the protrusion pattern 230, except for the length increased or decreased by the indentation (C), between one point and the other point It can mean the shortest distance. In other words, the minimum width may mean the minimum width of any protrusion pattern 230 having no indentation.

The maximum width Wmax of the protrusion pattern 230 may vary depending on the planar shape of the protrusion pattern 230 , but, for example, the maximum width Wmax of the protrusion pattern 230 is about 1.0 mm or less, or about 0.8 mm or less. , or about 0.5 mm or less, or about 0.3 mm or less.

The minimum width of the protrusion pattern 230 may correspond to the length W of one side. The lower limit of the minimum width W of the protrusion pattern 230 is about 20 μm or more, or about 30 μm, or more, or about 40 μm or more, or about 50 μm or more, or about 60 μm or more, or about 70 μm or more, or about 80 μm or more, or about 90 μm or more, or about 100 μm or more. The upper limit of the minimum width W is not particularly limited, but may be less than the maximum width Wmax. As a non-limiting example, the minimum width of the protrusion pattern 230 may be in a range of about 40 μm to 120 μm, or about 50 μm to 100 μm, or about 60 μm to 100 μm.

The height H of the protrusion pattern 230 may affect the polishing characteristics and durability of the polishing pad 11 . The minimum height H of the protrusion pattern 230 means the shortest vertical distance from the upper surface 210s of the base 210 to the upper end of the protrusion pattern 230 .

The height H of the protrusion pattern 230 may affect the polishing characteristics and durability of the polishing pad 11 . The minimum height H of the protrusion pattern 230 means the shortest vertical distance from the upper surface 210s of the base 210 to the upper end of the protrusion pattern 230 .

The height H of the protrusion pattern 230 may have a correlation with the minimum width W of the protrusion pattern 230 . That is, when the width ratio of the protrusion pattern 230 on the vertical section becomes too large, the polishing pad 11 rotates and in the process of closely contacting the polishing target substrate 50 in a planar direction, for example, the first direction (X) and the second direction (Y). Inclination or distortion in any direction in the plane to which it belongs may occur, and the designed polishing may not be fully performed. On the other hand, when the height H of the protrusion pattern 230 is too small, the life of the polishing pad 11 may be too short due to damage or abrasion occurring at the top of the protrusion pattern 230 as the polishing process is repeated.

In view of the above, the minimum height H of the protruding pattern 230 is about 0.5 to 2.5 times, or about 0.6 to 2.0 times, or about 0.7 to 1.8 times, or about the minimum width of the protruding pattern 230. 0.8 times to 1.7 times, or about 0.9 times to 1.6 times, or about 1.0 times to 1.5 times. As a non-limiting example, the maximum height of the protrusion pattern H may be about 0.01 mm to 1.5 mm.

In an exemplary embodiment, at least some of the plurality of protrusion patterns 230 may have different shapes. For example, the protrusion pattern 230 includes a first protrusion pattern 230a , a second protrusion pattern 230b , and a third protrusion pattern 230c , which may have different shapes. This may be due to the indentation (C). 4 illustrates a case in which the first protrusion pattern 230a does not have an indentation for convenience of description.

The indentation portion C is exposed on the upper surface of the protrusion pattern 230 , and is located at the edge of the protrusion pattern 230 in a plan view and refers to a portion contributing to an increase in the circumferential length L . The indentation portion C has a shape curved inward from the outer edge of the protrusion pattern 230 . The indentation portion C may have a shape such as a part of a circular arc or a part of an elliptical arc in a plan view.

First, the indentation portion (C) will be described with reference to a planar viewpoint.

The indentation portion C may include a first indentation portion C1 and a second indentation portion C2. In a plan view, the first indentation portion C1 may mean an indentation portion positioned such that the center of the arc overlaps with the protrusion pattern in a state in which there is no indentation inside the original edge of the protrusion pattern 230 . For example, the first indentation portion C1 may have a shape in which the central angle of the arc is greater than 90 degrees. On the other hand, the second indentation portion C2 may mean an indentation portion in which the center of the arc is positioned outside the original edge of the protrusion pattern 230 , that is, so as not to overlap the protrusion pattern in a state in which there is no indentation. For example, the second indentation portion C2 may have a shape in which the central angle of the arc is less than 90 degrees.

At least some of the plurality of protrusion patterns 230 have a central angle of the arc greater than about 90 degrees, or greater than about 100 degrees, or greater than about 110 degrees, or greater than about 120 degrees, or about Indentation (C) greater than 130 degrees, or greater than about 140 degrees, or greater than about 150 degrees, or greater than about 160 degrees, or greater than about 170 degrees, or even greater than about 180 degrees can have

If the central angle of the circular arc on the plane of the indentation portion C is less than 90 degrees, the effect of increasing the perimeter of the protrusion pattern 230 is insignificant, or the perimeter may decrease.

4 is a case in which the indentations C are of an inferior arc shape having an arc length less than 180 degrees in a plan view and a superior arc shape having an arc length greater than 180 degrees in FIG. A case in which all cases are included is exemplified.

The radius of curvature R of any indentation C may be about 5 μm or more, or about 6 μm or more, or about 7 μm or more, or about 8 μm or more, or about 9 μm or more, or about 10 μm or more. As the indentation portion C has a sufficient radius of curvature R, it is possible to achieve an increase in the perimeter length of the protruding pattern 230 in a plane. On the other hand, the upper limit of the radius of curvature R may be about 50 μm or about 40 μm. When the radius of curvature R is too large, the shape of the protruding pattern 230 may be collapsed, and the actual polishing area may be excessively reduced, thereby reducing polishing efficiency.

In the present specification, the radius of curvature of the indentation means the radius of curvature when the indentation is in the shape of a circular arc, and when the indentation is in the shape of an incomplete arc, such as an elliptical arc, equivalent to the ellipse formed by the center of the ellipse in the indentation It can be understood as the radius of an arc with an area.

In some embodiments, the radius of curvature R of the indentation portion C may have a predetermined relationship with the minimum width W of the protrusion pattern 230 . For example, the radius of curvature R may be in the range of about 0.3 to 0.8 times the minimum width W of the protrusion pattern 230 . That is, the curvature diameter of the indentation portion C may be in the range of about 0.6 times to 1.6 times the minimum width W. As shown in FIG. In the above range, it is possible to achieve a sufficient increase in the circumferential length and increase the actual polishing area.

The indentation portion C may be located in the vicinity of an extension line of any two straight sides of the protrusion pattern 230 . That is, it is located near the vertex of the protrusion pattern in a state where there is no indentation, and any one of the indentations C may occupy at least two straight sides. The straight edge may mean two adjacent straight edges of the protrusion pattern 230 on the assumption that the indentation part C does not exist. Alternatively, the straight edge may mean two straight edges that are in contact with both ends of a curve formed by the indentation C having a curved shape on a plane.

Accordingly, the vertex P of the protrusion pattern 230 near the indentation C of at least some of the protrusion patterns 230 of the plurality of protrusion patterns 230 is a certain straight edge and the indentation C in a plan view. The curves formed by may meet and form. At this time, in a planar view, at the vertex P adjacent to the indent C, the angle θ between the tangent of the curve and the straight side may be an acute angle. Specifically, the vertex angle θ may be about 20 to 80 degrees, but the present invention is not limited thereto.

In another embodiment, the indentation of at least a portion of the protrusion patterns 230 among the plurality of protrusion patterns 230 is not formed while occupying two straight edges, but occupies only one straight edge and is formed on the straight edge. it might be In another embodiment, the angle between the tangent line of the curve and the straight edge at the vertex P of the protrusion pattern 230 near the indentation C of the protrusion pattern 230 of at least some of the plurality of protrusion patterns 230 is It may not be an acute angle.

Next, the indentation portion C at the cross-sectional viewpoint will be described.

The indentation portion C may form a concave side surface 230s of the protrusion pattern 230 . The concave side surface 230s is meant to include a concave shape in a plane view and a concave shape in a cross-sectional view of the protrusion pattern 230 .

In an exemplary embodiment, the side surfaces 230s may have a downwardly inclined shape. Also, the indentation portion C may have a smaller size at the lower end of the protrusion pattern 230 than at the upper end, that is, at the portion in contact with the base 210 . In other words, the area at the top of the protrusion pattern 230 may be smaller than the area at the portion in contact with the base 210 due to the indentation C. The concave side surface 210s of the protrusion pattern 230 means a shape concave downward, that is, a shape concave toward the protrusion pattern 230 or the base 210 or the support layer 100 .

As the indentation portion C is positioned at any edge of the protrusion pattern 230 , the base 210 under the protrusion pattern may be at least partially exposed. That is, when the protrusion pattern without the indentation portion is disposed, a portion of the covered base 210 may be exposed as the indentation portion C is formed.

The first, third, and fourth protrusion patterns 230 from the left of FIG. 6 have substantially the height H of the protrusion pattern 230 and the height Hc of the indentation C, that is, the length in the third direction Z. exemplifies the same case. However, in some embodiments, for example, like the second protrusion pattern 230 from the left in FIG. 6 , the ratio of the height Hc of the indentation C to the total height H of a certain protrusion pattern 230 is about 50. % or more and less than 100%.

As a specific example, a certain protrusion pattern 230 may include a lower pattern 230a1 and an upper pattern 230a2. The lower pattern 230a1 may be a portion having the shape of a complete protrusion pattern, and the upper pattern 230a2 may be a portion formed by the vertical height Hc of the indentation portion C. As illustrated in FIG. A planar size of the lower pattern 230a1 may be greater than a planar size of the upper pattern 230a2. In this case, the vertical height Hc of the indentation portion C may approximately correspond to the height of the upper pattern 230a2.

If the indentation portion C has a height Hc smaller than the above range, the height H of the protrusion pattern 230 gradually decreases as the polishing pad 11 is used, and accordingly, the indentation portion is removed and the circumference The length may be significantly reduced. That is, the indentation portion C is formed to have a sufficient height Hc to increase durability of the polishing pad 11 .

In the process of manufacturing the polishing pad 11 including the protruding pattern 230 having porosity according to the present embodiment, first, the contact pressure required for polishing and the planar shape and length elements of the protruding pattern 230 are determined, , it is possible to determine the size of the indentation (C). In addition, the polishing area, ie, the upper area, of the protrusion pattern 230 may be determined in consideration of the contact pressure. Then, the perimeter length per unit area of the protruding pattern 230 is determined in consideration of the determined contact pressure and the polishing area, and accordingly, the polishing pad 11 including the pattern layer 200 including the protruding pattern 230 is manufactured. can do.

In this case, as described above, it is not easy to simultaneously control the factors affecting the polishing rate, that is, the ratio of the polishing area of the protruding pattern 230 and the perimeter length per unit area. In particular, there is a limit in increasing the perimeter length per unit area in a state in which the required polishing area is determined. If the perimeter length is increased by changing the pattern shape, it may cause a reduction in the polishing area, or at least increase the manufacturing cost due to a reduction in the minimum width of the pattern.

However, according to the present embodiment, it is possible to relatively easily achieve an increase in the circumference length per unit area while substantially maintaining the polishing area by using the indentations C of the protrusion pattern 230 . The perimeter lengths of the protrusion pattern having the indentation portion C as described above, for example, the second protrusion pattern 230b and the third protrusion pattern 230c, is a protrusion pattern having no indentation portion, for example, the first protrusion pattern 230a. about 1.2 times to 3.5 times, or about 1.5 times to 3.0 times, or about 1.8 times to 2.7 times the circumferential length of

In addition, some differences may occur depending on the planar shape of the protrusion pattern 230 , but as in the present embodiment, the protrusion pattern 230 has edges extending in the first direction (X) and the second direction (Y). In this case, the total perimeter length of any one protrusion pattern 230 is about 2 to 15 times, or about 3 to 13 times, or about 4 to 10 times the minimum width W of the protruding pattern 230 . can

Alternatively, the circumferential length formed by the protrusion pattern 230 per unit area is about 0.1 to 1.0 times, or about 0.2 to 0.9 times, or about 0.3 the reciprocal of the minimum width W of any one of the protruding patterns 230 . times to 0.8 times.

In addition to the ratio of the upper area (ie, the actual polished area) of the protruding pattern 230 and the perimeter per unit area as factors affecting the polishing rate, the inventors of the present invention found that the protruding pattern 230 is a predetermined Elements with indentations (C) in a range of sizes have been discovered and the present invention has been completed.

In manufacturing the polishing pad 11 , for example, when the circumferential length of the protruding pattern 230 is controlled after determining the polishing area in design, the size of the protruding pattern 230 is very limited. In addition, when the protrusion pattern 230 is formed in detail in order to secure a sufficient circumferential length, it causes an increase in manufacturing cost.

However, as in the present embodiment, when the protrusion pattern 230 intentionally forms the indentation portion C, a circumferential length greater than that calculated may be achieved. Therefore, even if the manufacturing cost is increased as in the prior art, when the protrusion pattern 230 is formed more precisely, that is, when the minimum width is configured to be smaller, a larger increase in the circumferential length can be achieved.

For example, the circumferential length of the protruding pattern 230 of the actually manufactured polishing pad 11 may be greater than the initially determined circumferential length per unit area. On the other hand, even if a larger protrusion pattern 230 is formed than in the prior art, that is, the minimum width is configured to be large to reduce the manufacturing cost, there is an advantage in that the perimeter length of the conventional level can be secured.

Hereinafter, the trench 300 of the polishing pad 11 will be described. One surface of the polishing pad 11 , for example, the upper surface of FIG. 6 may have a trench 300 . The trench 300 may perform a channel function for transporting and discharging the slurry 70 dropped on the upper surface of the polishing pad 11 . If necessary, the term 'trench' used herein may be used interchangeably with terms such as a channel, a groove, and a groove.

The trench 300 may include a linear radiation trench 310 extending in the first direction (X), the second direction (Y), and/or diagonally. The radiation trench 310 may have a shape extending in a radial direction from the center of the circular polishing pad 11 . FIG. 2 illustrates a case in which eight radiation trenches 310 inclined in the first direction (X), the second direction (Y), and 45 degree directions are formed.

Accordingly, the polishing pad 11 may be divided into eight sectoral regions having a central angle of approximately 45 degrees. At least a portion of the radiation trench 310 of the polishing pad 11 according to the present embodiment may extend in the arrangement direction of the protrusion patterns 230 , that is, in the first direction (X) and the second direction (Y). . However, the present invention is not limited thereto.

The radiation trench 310 may induce the slurry 70 to move or flow in the radial outer direction of the polishing pad 11 due to centrifugal force generated according to the rotation of the polishing pad 11 . Through this, even when the nozzle 60 does not move and the slurry 70 is dripped, the slurry 70 can be applied to the entire surface of the polishing pad 11, and excessive aggregation is prevented in a part. It is possible to improve the utilization efficiency of the slurry. In some embodiments, the radiation trench 310 may be configured to increase in depth toward the outer direction.

In addition, the trench 300 may further include a concentric circle trench 320 arranged in concentric circles based on the center of the circular polishing pad 11 . 2 illustrates a case in which there are three concentric trenches 320, of course, the present invention is not limited thereto. Any concentric trench 320 may be provided to intersect the plurality of radiation trenches 310 . The concentric trench 320 may induce the slurry 70 to move or flow in the rotational direction of the polishing pad 11 , ie, the circumferential direction, due to centrifugal force generated according to the rotation of the polishing pad 11 .

Although the present invention is not limited thereto, the slurry 70 flowing in the outer direction of the polishing pad 11 by the radiation trench 310 preferentially moves in the rotational direction of the polishing pad 11 by the concentric trench 320 . can move Therefore, forming the maximum width of the radiation trench 310 larger than the maximum width of the concentric trench 320 may be advantageous in terms of preventing agglomeration of the slurry 70 .

As a non-limiting example, the width of the radiation trench 310 is in the range of about 0.1 mm or more and 3.0 mm or less, or about 0.3 mm or more and 2.5 mm or less, or about 0.5 mm or more and 2.0 mm or less, or about 1.0 mm or more and 1.5 mm or less. can be in

The depth D1 of the trench 300 may be smaller than the thickness of the base 210 , for example, the maximum thickness. Accordingly, the support layer 100 may not be visually recognized through the trench 300 and may be covered by the remaining pattern layer 202 . In this specification, the depth D1 of the trench 300 means the shortest vertical length from the reference plane, that is, the upper surface of the base 210 to the lowermost base surface of the trench 300 .

In some embodiments, the depth of the trench 300 , for example, the depth D1 of the radiation trench 310 may be greater than the maximum height of the protrusion pattern 230 . As will be described later, the trench 310 may contribute to the fluidity of the pattern layer 202 . Accordingly, it may be desirable for the trench 310 to have a sufficient depth in terms of fluidity of the pattern layer 202 and tracking of the substrate to be polished.

Hereinafter, follow characteristics and polishing characteristics of the polishing pad 11 according to the present embodiment will be described with further reference to FIGS. 7 to 10 .

7 is an exemplary schematic diagram illustrating a state in which the polishing pad 11 is in contact with the substrate 50 to be polished, and FIG. 8 is a state in which the polishing pad polished by a conventional conditioner is in contact with the substrate 50 to be polished. It is an exemplary schematic diagram shown.

First, referring to FIG. 7 , when the lower surface of the substrate 50 to be polished has a fine curve, the polishing pad 11 according to the present embodiment has sufficient flexibility in the vertical direction, for example, gravity, as the support layer 100 has sufficient flexibility. Elastic deformation in the direction may be possible. Through this, the upper surface of the protruding pattern 230 forming the polishing surface can be in close contact with the curved surface of the polishing target substrate 50 , and the slurry is evenly distributed between the pattern layer 200 and the polishing target substrate 50 , and excellent polishing rate can be achieved.

In addition, the portion in which the polishing target substrate 50 convexly protruding to the lower side is in contact with the polishing pad 11 is where the polishing target substrate 50 concavely indented relatively upward is in contact with the polishing pad 11 . A relatively greater pressure can be applied compared to the part, thereby minimizing the polishing non-uniformity (NU) and achieving uniform polishing.

In particular, the polishing pad 11 according to the present embodiment forms the rigidity of the pattern layer 200 greater than that of the support layer 100 , so that when the polishing pad 11 is pressed against the substrate 50 to be polished, the pattern layer 200 . ), the deformation degree of the support layer 100 may be greater than that of the protrusion pattern 230 and the base 210 . As a non-limiting example, the pattern layer 200 may be configured such that only the support layer 100 is flexibly deformed while causing substantially no deformation or minimal deformation. If the protrusion pattern 230 has excessive flexibility and is easily deformed by vertical pressure, the polishing area of the protrusion pattern 230 is deformed, and the intended polishing rate is not exhibited due to shape deformation such as inclination in the horizontal direction. may not be

Therefore, the support layer 100, not the pattern layer 200, is deformed to follow the curve of the surface of the substrate 50 to be polished, and at the same time, an excellent polishing rate can be exhibited. Although the present invention is not limited thereto, as a non-limiting example, the maximum rate of change in the plane direction with respect to the vertical pressure of the pattern layer 200 including the protruding pattern 230 , or the material constituting the pattern layer 200 . The material may be selected so that it is about 20.0% or less, or about 15.0% or less, or about 10.0% or less, or about 5.0% or less.

On the other hand, referring further to FIG. 8 , in the case of the conventional polishing pad 11 ′, uniform roughness is exhibited over the entire surface of the polishing pad 11 ′ despite the surface roughness being maintained by a conditioner (not shown). It is substantially difficult to clean, and thus, it is impossible to adhere to the polishing target substrate 50 having a curved surface, thereby increasing polishing non-uniformity and even causing scratch defects.

9 is another exemplary schematic view showing a state in which the polishing pad 11 is in contact with the substrate 50 to be polished, and FIG. 10 is a state in which the polishing pad polished by a conventional conditioner is in contact with the substrate 50 to be polished. It is an exemplary schematic diagram showing. 9 and 10 illustrate a case in which the polishing target substrate 50 includes a device pattern 50b disposed on a base substrate 50a and an overcoat layer 50c thereon. The device pattern 50b may be a wiring pattern made of metal or an active pattern including a semiconductor material, but is not particularly limited.

First, referring to FIG. 9 , when the overcoating layer 50c having a very fine degree of curvature or step is located on the lower surface of the substrate 50 to be polished, the polishing pad 11 according to the present embodiment is The top of the pattern layer 200 may have a uniform height and the overcoat layer 50c may be uniformly planarized. That is, only the overcoating layer 50c protruding relatively downward convexly is selectively polished, and physical pressure is minimized on the overcoating layer 50c which is relatively concavely indented to the upper side, thereby damaging the elements of the substrate 50 to be polished. Global planarization can be achieved without Therefore, the polishing pad 11 according to the present embodiment may be applicable to the STI structure process or the like. This will be described later along with experimental examples.

On the other hand, referring further to FIG. 10 , in the case of the conventional polishing pad 11 ′, it is practically difficult to exhibit uniform roughness over the entire surface, and in some cases, it is polished up to the overcoat layer 50c that is relatively concavely indented upward. can be done Accordingly, the device of the polishing target substrate 50 may be damaged or only a degree of partial planarization may be achieved, so it is not suitable for use in a precision planarization process.

Hereinafter, other embodiments of the present invention will be described. However, the description of the same or extremely similar configuration to the above-described embodiment will be omitted, and this will be clearly understood by those skilled in the art from the accompanying drawings.

11 is a cross-sectional view of a polishing pad according to another embodiment of the present invention, and is a cross-sectional view showing a position corresponding to that of FIG.

Referring to FIG. 11 , in the polishing pad 12 according to the present embodiment, the protrusion patterns 230 of the pattern layer 202 have indentations C, in the third direction Z of the indentations C. The length of the furnace, that is, the height Hc of the indentation portion C is smaller than the height H of the protrusion pattern 230 .

Although the protrusion pattern in which the height Hc of the indentation portion C is smaller than the height of the protrusion pattern in FIG. 6 has been described above, in the present embodiment, most of the protrusion patterns 230 have such a shape, which is different from the previous embodiment. to be.

That is, most of the protrusion patterns 230 may include a lower pattern 230a1 and an upper pattern 230a2 . At this time, the ratio of the height Hc of the indentation portion C to the total height H of the protrusion pattern 230 is about 50% or more and 100% or less, or about 50% or more and less than 100%, or about 60 % or more and 98% or less, or about 70% or more and 95% or less. As described above, the indentation portion C may include the first indentation portion C1 and the second indentation portion C2.

If the height of the protrusion pattern 230, that is, the distance between the uppermost surface of the protrusion pattern 230 and the upper surface of the base 210 is required to be relatively large, the same shape as the present embodiment may be implemented.

In some embodiments, the side surface 230s of the protrusion pattern 230 may have a concave curved side surface, and the side surface 230s may include a first side surface 230s1 and a second side surface 230s2 . The first side surface 230s1 may be a side inclined downward from the protrusion pattern 230 , and the second side surface 230s2 may mean a side surface that is partially inclined upward.

As the indentation portion C is formed in the form of a portion of an approximately spherical or elliptical shape as in the present embodiment, the side surface 230s remaining in the protrusion pattern 230 is partially inclined upwardly to the second side surface 230s2. may include

In addition, since the above-described planar shape, cross-sectional shape, size, and arrangement of the indentation portion (C), overlapping description will be omitted.

12 is a cross-sectional view of a polishing pad according to another embodiment of the present invention, and is a cross-sectional view showing a position corresponding to that of FIG.

Referring to FIG. 12 , the polishing pad 13 according to the present embodiment is different from the polishing pad according to the embodiment of FIG. 6 and the like in that it does not have a trench.

The patterned layer 203 may not have separate trenches, such as trenches extending in a radial, or concentric, or other direction.

13 is a cross-sectional view of a polishing pad according to another embodiment of the present invention, and is a cross-sectional view showing a position corresponding to that of FIG.

Referring to FIG. 13 , in the polishing pad 14 according to the present embodiment, the depth of the trench 314 , eg, the radiation trench, formed in the patterned layer 204 is substantially equal to the thickness of the base 210 , and thus the trench The point in which the upper surface of the support layer 100 is partially exposed through 314 is different from the embodiment of FIG. 6 and the like.

The base 210 may be divided into a plurality of bases 210 based on the trench 314 , for example, the radiation trench, on one support layer 100 , and may be separated and spaced apart. In this case, as described above, any one of the bases 210 or the pattern layer 204 spaced apart from each other has an approximately sectoral shape in plan view.

Accordingly, the bases 210 may exhibit fluidity in the planar direction by the pressure in the third direction Z applied to the pattern layer 204 . Through this, vertical tracking along the curved surface of the substrate to be polished can be achieved more flexibly.

In addition, since the above-described planar shape, cross-sectional shape, size, and arrangement of the indentation portion (C), overlapping description will be omitted.

14 is a cross-sectional view of a polishing pad according to another embodiment of the present invention, and is a cross-sectional view showing a position corresponding to that of FIG.

Referring to FIG. 14 , the polishing pad 15 according to the present embodiment is different from the embodiment of FIG. 13 described above in that the support layer 100 also has a partially recessed trench.

In an exemplary embodiment, the base 210 of the patterned layer 205 may have patterned layer trenches 315 , and the support layer 100 may have support layer trenches 115 . The depth of the pattern layer trench 315 may be substantially equal to the thickness of the base 210 . A depth of the support layer trench 115 may be smaller than a thickness of the support layer 100 .

The pattern layer trench 315 and the support layer trench 115 may overlap each other in the third direction Z and may be connected to each other. The patterned layer trenches 315 and the backing layer trenches 115 may each include the radial trenches and/or concentric trenches described above.

Although not shown in the drawings, in another embodiment, the support layer trench 115 may have a shape completely penetrating the support layer 100 . Accordingly, other components (not shown) under the polishing pad 15 may be visually recognized through the trenches 115 and 315 .

In addition, since the above-described planar shape, cross-sectional shape, size, and arrangement of the indentation portion (C), overlapping description will be omitted.

15 is a plan view of a polishing pad according to another embodiment of the present invention, and is a plan view showing a position corresponding to that of FIG. 4 .

Referring to FIG. 15 , the protrusion pattern 236 of the pattern layer 206 of the polishing pad 16 according to the present embodiment has an approximately '+' shape rather than a rectangular shape in a plan view, as shown in FIG. 4 and the like. It is different from the polishing pad according to the example.

The plurality of protrusion patterns 236 may be disposed on the base 210 . As described above, the protrusion patterns 236 may be repeatedly arranged along at least two directions to form an approximately regular arrangement. For example, the protrusion patterns 236 may be repeatedly arranged with the same spacing in the first direction (X) and the second direction (Y).

Although not shown in the drawings, at least some of the trenches extending in the radial direction may extend in substantially the same direction as the arrangement direction of the protrusion patterns 236 , but the present invention is not limited thereto.

The protrusion pattern 236 may include a first protrusion pattern 236a, a second protrusion pattern 236b, and a third protrusion pattern 236c. A case in which the first protrusion pattern 236a does not have the indentation portion and the second protrusion pattern 236b and the third protrusion pattern 236c have the indentation portion C is exemplified. The first protrusion pattern 236a may have substantially the same shape as the second protrusion pattern 236b except that it does not have an indentation portion. The second protrusion pattern 236b and the third protrusion pattern 236c may have substantially the same shape, except that the positions of the indentations C are different.

Any one of the protrusion patterns 236 may have an approximately '+' shape. Specifically, it may have four extension parts extending in the same first direction (X) and second direction (Y) as the arrangement direction based on an arbitrary point. In this case, the maximum width Wmax of the protrusion pattern 236 may be expressed as the sum of the lengths of two extensions extending in substantially opposite directions. The minimum width Wmin of the protrusion pattern 236 may be expressed as a width of any extension.

The size of the protrusion pattern 236 may affect the polishing rate of the polishing pad 16 , the polishing non-uniformity, and the like. In the case of the protrusion pattern 236 having a substantially cross shape as in the present embodiment, the perimeter length per unit area of the protrusion pattern 236 may be substantially the same as or similar to the above-described embodiment of FIG. 4 . On the other hand, a polishing area different from that of FIG. 4 may be provided, and design freedom may be secured by using the shape of the protruding pattern 236 as in the present embodiment. In another embodiment, the number of extensions may be three, or five or more.

The protrusion pattern 236 may have four bay portions 236v in an upper left portion, an upper right portion, a lower right portion, and a lower left portion in a plan view. As in the present embodiment, when any one protrusion pattern 236 has the protrusion 236v, the slurry (not shown) flowing on the upper surface of the polishing pad 16 rides on the upper surface of the protruding pattern 236 in the opposite direction. A flowing structure can be formed. That is, the flow of the slurry is trapped and/or controlled by the protrusion 236v of the protrusion pattern 236 as well as the upper surface and trench of the base 210 to forcibly flow to the upper surface of the protruding pattern 236 . This can be done, and through this, it is possible to increase the utilization efficiency of the slurry.

In this embodiment, the arrangement direction of the plurality of protrusion patterns 236 and the extension direction of the extension part are substantially the same, but the arrangement direction of the protrusion pattern 236 and the extension direction of the extension part may intersect.

In addition, since the above-described planar shape, cross-sectional shape, size, and arrangement of the indentation portion (C), overlapping description will be omitted.

16 is a plan view of a polishing pad according to another embodiment of the present invention, and is a plan view showing a position corresponding to that of FIG. 4 .

Referring to FIG. 16 , the protrusion pattern 237 of the pattern layer 207 of the polishing pad 17 according to the present embodiment has an approximately pivoted '+' shape, that is, an 'X' shape in a plan view. It is different from the polishing pad according to the embodiment of FIG. 15 . In this specification, the characters '+' and 'X' may be regarded as substantially the same shape except for the pivoted point.

A certain protrusion pattern 237 may have four extension portions extending based on an arbitrary point, and the extension direction of the extension portion may be a direction crossing the arranging direction of the protrusion patterns 237 . have. Although the case where the intersection angle is about 45 degrees is exemplified, the present invention is not limited thereto, and the opening angle of the intersection angle may be about 30 degrees or about 20 degrees.

The perimeter length per unit area of the protrusion pattern 237 according to the present exemplary embodiment and the planar area may be substantially the same as those of the exemplary embodiment of FIG. 15 .

When the protrusion pattern 237 is pivoted on a plane as in the present embodiment, the first direction (X) side and the other side of the protrusion pattern 237 in the space for trapping the slurry between the above-mentioned bay, that is, between the two extension parts, and It may be positioned on one side and the other side in the second direction (Y). Although the present invention is not limited thereto, the slurry may have a large tendency to move in a radial direction due to centrifugal force generated according to the rotation of the polishing pad 17 , or at least to flow in a tangential direction to rotation. In addition, the radial direction and the tangential direction may be substantially parallel to the first direction (X) and the second direction (Y). Therefore, by configuring the full portion as in this embodiment, the flow structure of the slurry can be strengthened, and the polishing efficiency can be improved.

The first protruding pattern 237a, the second protruding pattern 237b, and the third protruding pattern 237c, and the planar shape, cross-sectional shape, size and arrangement of the indentation portion C have been described above, so overlapping descriptions is omitted.

17 is a plan view of a polishing pad according to another embodiment of the present invention, and is a plan view showing a position corresponding to that of FIG. 4 .

Referring to FIG. 17 , the plurality of protrusion patterns 238 of the pattern layer 208 of the polishing pad 18 according to the present embodiment form a protrusion pattern cluster, that is, a cluster pattern 238x according to the embodiment of FIG. 16 . It is different from the polishing pad according to

As described above, the protrusion pattern 238 means a unit structure having a shape independent of each other, and even when the cluster patterns 238x are regularly arranged, the terms minimum width, maximum width, etc. used herein refer to any one protrusion. It should be understood that reference is made to the pattern 238 . That is, even when the cluster pattern 238x is configured, the minimum width Wmin of the protrusion pattern 238 corresponds to the length of one side of the protrusion pattern having a substantially rectangular shape, and the maximum width Wmax of the protrusion pattern 238 is diagonal. It can be expressed as the length of the direction.

Any one protrusion pattern 238 may have substantially the same shape as the protrusion pattern of FIG. 4 . On the other hand, the plurality of protrusion patterns 238 , for example, five protrusion patterns 238 may form a cluster pattern 238x. The cluster patterns 238x may be regularly arranged on a plane. 17 exemplifies a case in which the clustering pattern 238x includes a first clustering pattern 238x1, a second clustering pattern 238x2, and a third clustering pattern 238x3. The first cluster patterns 238x1 to the third cluster patterns 238x3 may have substantially the same shape and may be arranged in the first direction (X) and the second direction (Y).

The cluster pattern 238x may have an approximately 'X' shape. Accordingly, the space surrounded by any three protruding patterns 238 may form a bay 238v capable of trapping the slurry.

Also, the plurality of protrusion patterns 238 may be approximately regularly arranged in any one cluster pattern 238x. 17 illustrates a case in which the protrusion pattern 238 constituting one cluster pattern 238x includes a first protrusion pattern 238a, a second protrusion pattern 238b, and a third protrusion pattern 238c. .

Each protrusion pattern 238 may have the indentation portion C as described above. The protruding patterns 238 adjacent to each other may be in a state in which they contact each other in a diagonal direction, but the present invention is not limited thereto.

In the present embodiment, in providing a pattern shape having the overall shape as shown in FIG. 16 , one cluster pattern 238x may be composed of a plurality of protrusion patterns 238 to increase the circumferential length. In this case, although a polishing area approximately equal to or similar to that of FIG. 16 is provided, the perimeter length per unit area may be further increased, thereby securing design freedom.

In another embodiment, the protrusion patterns 238 included in any one cluster pattern 238x may have at least partially different shapes. For example, the second protrusion pattern 238b positioned at the center may have a shape different from that of the first protrusion pattern 238a and the third protrusion pattern 238c positioned at the edge.

In addition, since the above-described planar shape, cross-sectional shape, size, and arrangement of the indentation portion (C), overlapping description will be omitted.

18 is a plan view of a polishing pad according to another embodiment of the present invention, and is a plan view illustrating one cluster pattern among a plurality of cluster patterns.

Referring to FIG. 18 , the pattern layer 209 of the polishing pad 19 according to the present embodiment includes a plurality of clustered patterns 239x, and the protruding patterns 239 constituting the clustered pattern 239x are approximately ' The point in the shape of an X' or a '+' is different from the polishing pad according to the embodiment of FIG. 17 . Although not shown in the drawings, the pattern layer 209 may include a plurality of regularly arranged cluster patterns 239x.

The protrusion patterns 239 may include a first protrusion pattern 239a, a second protrusion pattern 239b, and a third protrusion pattern 239c. The first protrusion pattern 239a located at the relatively central shape may have an approximately '+' shape, and the second protrusion pattern 239b and the third protrusion pattern 239c located at the edge may have an approximately 'X' shape. have. Accordingly, the first protrusion pattern 239a and the second protrusion pattern 239b, and the first protrusion pattern 239a and the third protrusion pattern 239c may be spaced apart from each other. A path through which large particles or impurities of the slurry pass through the space between the protrusion patterns 239 may be provided. That is, the particles causing damage to the substrate to be polished do not flow along the upper surface of the protrusion pattern 239 but pass through the spaced space to further improve polishing characteristics and quality.

In addition, according to the present embodiment, in addition to the space formed by any one cluster pattern 239x, that is, the space surrounded by the three protruding patterns 239, each protruding pattern 239 may have a respective bay. It is possible to further improve the utilization efficiency of the slurry.

In addition, since the above-described planar shape, cross-sectional shape, size, and arrangement of the indentation portion (C), overlapping description will be omitted.

19 is a plan view of a polishing pad according to another embodiment of the present invention, and is a plan view illustrating one cluster pattern among a plurality of cluster patterns.

Referring to FIG. 19 , the pattern layer 200 of the polishing pad 20 according to the present embodiment includes a plurality of clustered patterns 240x, and nine protruding patterns 240 constituting the clustered pattern 240x are formed. The point is different from the polishing pad according to the embodiment of FIG. 18 .

The protrusion pattern 240 may include a first protrusion pattern 240a to a third protrusion pattern 240c. The first protrusion pattern 240a may be positioned at the center of the cluster pattern 240x, and the third protrusion pattern 240c may be positioned at the outermost portion. The second protrusion pattern 240b may be disposed between the first protrusion pattern 240a and the third protrusion pattern 240c. Although not shown in the drawings, the pattern layer 200 may include a plurality of regularly arranged cluster patterns 240x.

The polishing pad 20 according to the present embodiment has a shape substantially similar to that of FIG. 18 , but may be provided to provide a larger circumferential length.

In some embodiments, the arrangement direction of the plurality of cluster patterns 240x and the arrangement direction of the protrusion patterns 240 in a certain cluster pattern 240x may intersect. For example, the intersection angle may be about 20 degrees, or about 30 degrees. In this case, the arrangement density of the cluster patterns 240x per unit area may be further increased.

In addition, since the above-described planar shape, cross-sectional shape, size, and arrangement of the indentation portion (C), overlapping description will be omitted.

Hereinafter, a method for manufacturing a polishing pad according to the present invention will be described.

20 is a schematic diagram illustrating a method of manufacturing a polishing pad according to an embodiment of the present invention.

Referring to FIG. 20 , the method of manufacturing a polishing pad according to the present embodiment may include disposing a pattern layer 200 on a support layer (not shown). For example, the pattern layer 200 may be formed on the support layer using a roll-to-roll process, but the present invention is not limited thereto. ), and the pattern layer 200 in which the protrusion pattern 230 is formed may be disposed on the support layer.

In an exemplary embodiment, the step of forming the pattern layer 200 may include filling the curable composition (S) into the inclusion pattern of the pattern mold (PM), and curing the filled curable composition (S). can The filling of the curable composition (S) in the recessed pattern of the pattern mold (PM) may include filling using a knife (T), but the present invention is not limited thereto.

In addition, in the step of filling the curable composition (S) in the recessed pattern of the pattern mold (PM), the volume of the curable composition (S) filled in any recessed pattern may be smaller than the spatial volume of the recessed pattern. Specifically, in the recessed pattern at least partially filled with the curable composition S, a filled region R1 and an unfilled region R2 may be formed. The filling region R1 may mean a portion filled with the curable composition S, and the unfilled region R2 may mean a portion not filled with the curable composition S.

A gas such as air may exist in the unfilled region R2 . In addition, the unfilled region R2 may be positioned in contact with the base surface and the inner wall of the recessed pattern.

The inventors of the present invention confirmed that the degree of filling of the curable composition (S) in the fine-sized recessed pattern can be controlled according to the atmosphere of relative humidity in the step of forming the pattern layer 200, and completed the present invention. . When the curable composition (S) and/or the pattern mold (PM) includes a resin such as urethane, the amount to be filled may vary depending on humidity conditions. For example, the step of forming the pattern layer 200 , that is, filling the recessed pattern with the curable composition (S) and/or curing the curable composition (S) to form the protruding pattern 230 is the relative humidity. about 60% or greater, or about 65% or greater, or about 70% or greater, or about 75% or greater, or about 80% or greater atmosphere. When the curable composition (S) is filled in the recessed pattern under the atmosphere within the above range, an unfilled region R2 in the recessed pattern may be formed. The upper limit of the relative humidity is not particularly limited, but may be, for example, less than 100%, or about 90% or less.

The curable composition S of the above-described filling region R1 may be cured by the curing unit L or the like to form the protrusion pattern 230 . The plurality of protrusion patterns 230 are connected by the base 210 as described above. The curing unit L may be a light irradiation device, but the present invention is not limited thereto.

The depth of the depression pattern may approximately correspond to the maximum height of the protrusion pattern 230 , and the minimum width of the depression pattern may approximately correspond to the minimum width of the protrusion pattern 230 . For example, the maximum depth of the depression pattern may be in the range of about 0.5 to 2.5 times the minimum width of the depression pattern.

On the other hand, the unfilled region R2 may remain as the indentation C. In addition, since the above-described planar shape, cross-sectional shape, size, and arrangement of the indentation portion (C), overlapping description will be omitted.

Hereinafter, the present invention will be described in more detail with reference to specific preparation examples, comparative examples and experimental examples.

<Production Example 1>

A polishing pad including a protrusion pattern having the same shape as in FIGS. 21 to 23 was manufactured. The polishing pad was manufactured using a mold, and a polyurethane resin was used as a support layer and a pattern layer. The minimum width of one protrusion pattern having a '+' shape is about 20 μm, and one cluster pattern consists of 13 protrusion patterns.

<Comparative example>

A commercially available IC1010 (product name) polishing pad from Dow was prepared.

<Experimental Example 1>

In order to confirm the effect of the perimeter per unit area on the polishing rate characteristics, the polishing rate was measured by changing the pressure, the ratio of the polishing area to the total area, and the circumference length per unit area. For the polishing experiment, an 8-inch oxide wafer and TSO-12 of Soulbrain (KR), which is a slurry for oxide, were used. And the results are shown in FIGS. 24 to 27 .

Here, the pressure, specifically, the apparent contact pressure (Pa) may be defined as a value obtained by dividing the total load applied to the polishing target substrate by the carrier by the area of the polishing target substrate.

24 is a case in which the rotation speed of the polishing pad is fixed to 61 rpm, the pressure ^{is changed to 150 g/cm 2} and 300 g/cm ² , and the proportion of the polishing area is about 2.5%.

25 is a case in which the rotation speed of the polishing pad is fixed at 61 rpm, the pressure ^{is changed to 150 g/cm 2} and 300 g/cm ² , and the proportion of the polishing area is about 5%.

26 is a case in which the rotation speed of the polishing pad is fixed at 61 rpm, the pressure ^{is changed to 150 g/cm 2} and 300 g/cm ² , and the proportion of the polishing area is about 10%.

27 is a case in which the rotation speed of the polishing pad is fixed at 61 rpm, the pressure ^{is changed to 150 g/cm 2} and 300 g/cm ² , and the proportion of the polishing area is about 30%.

<Experimental Example 2>

The polishing rate was measured and compared using the conventional polishing pad prepared in Comparative Example and the polishing pad of Preparation Example (polishing area ratio of 12.0%). Polishing conditions were determined by pad rotation speed of 93rpm, 61rpm conditions, and polishing pressures of 150g/cm ² and 300g/cm ² , and the polishing slurry was HS-9400D 1:1 diluted condition from Hitachi (JP). . The product of grinding pressure and rotation speed is plotted on the x-axis. And the result is shown in FIG.

Referring to FIG. 28 , it can be seen that the polishing pad according to the present invention is superior to the polishing pad according to the comparative example under all conditions.

<Experimental Example 3>

Among the polishing pads of Preparation Example (polishing area ratio 12.0%), protrusion patterns having widths of 60 μm and 20 μm were prepared (SP-60MD, SP-20MD), and planarization of the overcoat layer of any wafer substrate was performed. In addition, the overcoat layer was planarized using the polishing pad IC1010 prepared according to the comparative example. And the results are shown in FIGS. 29 to 31 according to the width of the pattern, respectively.

The density of the patterns in the wafer pattern used in the experiment was all about 50%, and in the case of FIGS. 29 to 31, the case where the line width of the wafer substrate pattern was 5 μm, 10 μm, and 50 μm, respectively.

29 to 31 , the x-axis represents the thickness of the protruding portion (upper) of the overcoat layer, and the y-axis represents the thickness of the recessed portion (lower) of the overcoating layer. The slope of these graphs means that the removal degree of the recessed portion (the portion not to be removed) is small with respect to the removal degree of the protruding portion (the portion to be removed) of the overcoat layer, and the smaller the slope, the better the planarization characteristic do. That is, when the slope of this graph is 0 (horizontal), it may mean that it is an ideal polishing pad in which only the protruding portion is removed and the depressed portion is not removed at all.

29 to 31 , in performing planarization of the overcoat layer, the polishing pad according to the present invention has a slope in the range of about 200 to 400 (SP-60MD) and 200 to 600 (SP-20MD). On the other hand, the polishing pad according to the comparative example has a slope in the range of about 800 to 1,000 (in the case of IC1010), so it can be seen that the polishing pad according to the present invention exhibits relatively excellent planarization and polishing selectivity. In particular, it was confirmed that the small sub-pattern exhibited better flatness compared to the large sub-pattern.

<Experimental Example 4>

A polishing process was performed using the polishing pad (SP-60MD) according to the present invention and the polishing pad (IC1010) according to the comparative example, and the polishing temperature increase according to the polishing time was measured. And the results are shown in FIG. 32 .

Referring to FIG. 32 , in the polishing pad according to the present invention, the polishing temperature decreases again when the polishing time elapses after about 150 seconds. It can be seen that it takes a long time to stabilize the polishing process. This may be due to the shape of the protrusion pattern, but the present invention is not limited to any theory.

<Preparation Example 2>

A polishing pad was manufactured according to the method of FIG. 20 . At this time, the manufacturing process was performed under an atmosphere of about 70% relative humidity. And an image of the polishing pad is shown in FIG. 33 .

In the above, the embodiment of the present invention has been mainly described, but this is only an example and does not limit the present invention. It will be appreciated that various modifications and applications not exemplified above are possible.

Therefore, it should be understood that the scope of the present invention includes changes, equivalents or substitutes of the technical ideas exemplified above. For example, each component specifically shown in the embodiment of the present invention may be implemented by modification. And differences related to such modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

1: Polishing device
11: polishing pad
100: support layer
200: pattern layer
210: base
230: protrusion pattern

Claims (20)

A step of forming a pattern layer disposed on the support layer, comprising the step of forming a pattern layer including a plurality of protruding patterns spaced apart from each other, wherein the step of forming the pattern layer comprises:
Filling the curable composition in the recessed pattern of the pattern mold; and
and curing the curable composition filled in the recessed pattern to form the protruding pattern,
A method of manufacturing a polishing pad wherein the volume of the curable composition filled in any recessed pattern is smaller than the spatial volume of the recessed pattern. According to claim 1,
The step of filling the curable composition, or the step of curing, is a method of manufacturing a polishing pad performed under a relative humidity of 70% or more. According to claim 1,
The plurality of protrusion patterns include a first protrusion pattern and a second protrusion pattern,
In a plan view, the first protrusion pattern and the second protrusion pattern, except that the first protrusion pattern has an indentation at a position, and the second protrusion pattern does not have an indentation at a position corresponding to the position. The shape of the manufacturing method of the polishing pad is substantially the same. According to claim 1,
The maximum depth of the depression pattern is about 0.5 to 2.5 times the minimum width of the depression pattern. support layer; and a pattern layer disposed on the support layer, the pattern layer including a base and a plurality of protruding patterns disposed on the base,
In a plan view, the polishing pad in which the protruding pattern has indentations. 6. The method of claim 5,
The indentation portion of the protrusion pattern is located in the vicinity of the extension line of the two straight sides in a plan view. 6. The method of claim 5,
The vertex of the protrusion pattern having the indentation is formed by meeting a straight edge and a curve formed by the indentation in a plan view,
An angle between the tangent of the curve and the straight edge at the vertex of a certain protrusion pattern forms an acute angle. 6. The method of claim 5,
The polishing pad wherein the radius of curvature of the indentation is in the range of 5 μm to 50 μm. 6. The method of claim 5,
The radius of curvature of the indentation is in the range of 0.3 times to 0.8 times the minimum width of the protrusion pattern. 10. The method of claim 9,
The minimum width of the protrusion pattern is in the range of 20 μm to 120 μm. 6. The method of claim 5,
In a plan view, at least some of the indentations have an arc shape that is larger than a semicircle. 6. The method of claim 5,
In a planar view, the actual polishing area occupied by the plurality of protruding patterns per unit area is 5% to 35% of the polishing pad. 6. The method of claim 5,
The height of the protrusion pattern is about 0.01 mm or more and 1.5 mm or less,
A width of the indentation in the height direction is 50% or more and 100% or less of a height of the protrusion pattern. 6. The method of claim 5,
A polishing pad wherein a base is at least partially exposed by the indentation of the protruding pattern. 6. The method of claim 5,
The indentation portion contributes to an increase in the circumferential length in a plane of the second protruding pattern, and the circumferential length of the polishing surface formed by the plurality of protruding patterns per unit area is in the range of ^{1.0 mm/mm 2} to 50.0 mm/mm ^{2 .} . 6. The method of claim 5,
A perimeter length of the second protrusion pattern is 2 to 15 times the minimum width of the second protrusion pattern. 6. The method of claim 5,
In a cross-sectional view, the protruding pattern has a concave side formed by an indentation. 6. The method of claim 5,
The plurality of protrusion patterns includes a first protrusion pattern and a second protrusion pattern spaced apart from each other, and in a plan view, an edge of the second protrusion pattern has substantially the same shape as the first protrusion pattern, except that an edge has an indentation. phosphorous polishing pad. 19. The method of claim 18,
The circumferential length of the second protruding pattern is in a range of 1.2 times to 3.5 times the circumferential length of the first protruding pattern. 19. The method of claim 18,
The plurality of protrusion patterns further include a third protrusion pattern,
The edge of the third protrusion pattern has substantially the same shape as that of the first protrusion pattern except for having an indentation,
The third protrusion pattern and the second protrusion pattern have substantially the same shape as each other, except that the positions of the indentations are different from each other.

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