KR20230134719A - Polishing pad including protruding pattern with vertical groove, method for preparing the same, and polishing apparatus - Google Patents

Abstract

A polishing pad including a protruding pattern with vertical grooves, which can improve a polishing rate and reduce manufacturing costs, and a polishing device including the same are provided. The polishing pad includes a support layer; and a pattern layer disposed on the support layer and including a plurality of protruding patterns, wherein the protruding pattern has a first groove and a indentation portion on a plan view, and when viewed from a plan view, the first groove is a portion of the protruding pattern. Located in the area surrounded by the edge, the planar shape of the first groove forms a closed loop.

Description

Polishing pad including a protruding pattern with vertical grooves, manufacturing method thereof, and polishing device {POLISHING PAD INCLUDING PROTRUDING PATTERN WITH VERTICAL GROOVE, METHOD FOR PREPARING THE SAME, AND POLISHING APPARATUS}

The present invention relates to a polishing pad including a protruding pattern formed on a polishing surface, a manufacturing method thereof, and a polishing device including the same. In detail, it relates to a polishing pad that includes a protruding pattern with vertical grooves, which can improve the polishing rate and reduce manufacturing costs, and a polishing device including the same.

The manufacturing of highly integrated circuit devices such as semiconductors and displays involves a chemical mechanical polishing (CMP) process. The chemical mechanical polishing process performs polishing by bringing a substrate to be polished, such as a wafer substrate, into pressurized contact with a rotating polishing pad and simultaneously using a chemical reaction with a slurry. The chemical mechanical polishing process is mainly aimed at flattening the surface to be polished or removing unnecessary layers.

The characteristics of the polishing process can be expressed in terms of removal rate (RR), non-uniformity (NU), scratches on the polishing object, and planarization of the polishing object. Among these, the polishing rate is one of the most important characteristics of the polishing process, and the polishing surface shape (morphology, topography) of the polishing pad, slurry composition, and temperature of the polishing platen are known to be major factors.

A conventional polishing device is configured to include a conditioner to maintain the characteristics of the surface of the polishing pad, that is, the polishing surface. The conditioner may be positioned eccentrically with respect to the rotation axis of the polishing pad, and the conditioner may be configured to contact the polishing surface of the polishing pad. Cutting particles made of diamond or the like are disposed on the surface of the conditioner in contact with the polishing pad, and the cutting particles may form or maintain an uneven structure on the surface of the polishing pad. That is, during the polishing process, the conditioner continuously polishes the polishing surface of the polishing pad to maintain the surface roughness of the polishing pad above a certain level, and the polishing device including the polishing pad maintains an approximately constant polishing rate. can be displayed.

However, as the polishing process is performed, the polishing pad is continuously worn, and problems with uneven surface structure and surface roughness may occur. If the surface roughness is too small, there is a problem that the actual contact area that actually contacts the substrate to be polished increases or the flow of the polishing liquid slurry becomes difficult. On the other hand, if the surface roughness is too large, the required degree of flatness may not be satisfied due to uneven contact with the substrate to be polished, and scratches may occur on the polishing target. This problem of unevenness of the polishing surface is a factor that shortens the lifespan and durability of the polishing pad.

In particular, as patterned substrates such as semiconductors become more highly integrated, the above problems may become more severe. For example, a degree of planarization at the level of global planarization is required to form a shallow trench isolation (STI) structure for high integration of semiconductors, and the polishing process can directly affect semiconductor characteristics.

However, in the case of conventional polishing pads, they are vulnerable to defects such as dishing and erosion due to durability issues, and when the surface of a wafer etc. has minute curves, these problems can lead to very serious process defects. can cause Therefore, there is an urgent need to develop a polishing pad that can be applied even in cases that require a high level of planarization, such as a shallow trench separation process.

Accordingly, the problem to be solved by the present invention is to provide a polishing pad that can exhibit a stable morphology or topography of the polishing surface even though the polishing process continues. In addition, this provides a polishing pad that has excellent polishing rate and uniformity and can improve the efficiency of using the polishing liquid slurry.

Furthermore, the aim is to provide a polishing pad that can control the polishing rate depending on the polishing target based on factors newly discovered by the inventors of the present invention that can affect the polishing rate.

At the same time, the aim is to provide a polishing pad that can be manufactured at a lower cost despite the above-mentioned improvement in polishing characteristics.

Another problem to be solved by the present invention is to provide a polishing device including a polishing pad that has excellent polishing rate and uniformity and can improve the use efficiency of the polishing liquid slurry.

Another problem to be solved by the present invention is to provide a method of manufacturing a polishing pad that can reduce manufacturing costs while improving polishing characteristics.

The problems of the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the description below.

A polishing pad according to an embodiment of the present invention for solving the above problems includes a support layer; and a pattern layer disposed on the support layer and including a plurality of protruding patterns, wherein the protruding pattern has a first groove and a indentation portion on a plan view, and when viewed from a plan view, the first groove is a portion of the protruding pattern. Located in the area surrounded by the edge, the planar shape of the first groove forms a closed loop.

In cross-section, the first groove may have an at least partially vertical inner wall.

In addition, the pattern layer includes a base forming a reference surface, and the protruding pattern disposed on the base, the indentation is a curved indentation, and the protrusion pattern has a step formed by the base surface of the indentation. You can have it.

Furthermore, in cross-section, the curved indentation may have an at least partially vertical inner wall.

Additionally, the base may have a second groove having a closed loop shape in plan.

At this time, the planar area of the first groove may be within ±10% of the planar area of the second groove.

The pattern layer includes a base forming a reference surface, and the protruding pattern disposed on the base, the base having a closed loop shape in a plan view, a second groove spaced apart from the protruding pattern, and a protruding pattern disposed on the base. It may have a closed loop shape and a third groove adjacent to the protruding pattern.

The pattern layer includes a base forming a reference surface, and the protruding pattern disposed on the base, the base having a closed loop shape in a plan view, a second groove spaced apart from the protruding pattern, and a protruding pattern disposed on the base. It may have a closed loop shape and a third groove having a step surface therein.

At this time, the distance from the other surface of the pattern layer to the lowest base surface of the third groove may be within ±10% of the distance from the other surface of the pattern layer to the lowest base surface of the second groove.

The maximum depth of the first groove may be within ±10% of the maximum depth of the second groove.

The pattern layer includes a base forming a reference surface, and the protruding pattern disposed on the base, the base having a closed loop shape in a plan view, a second groove spaced apart from the protruding pattern, and a protruding pattern disposed on the base. It may have a closed loop shape and a third groove having a smaller planar size than the second groove.

Among the one or more indentations of the protruding pattern, the width of the indentation having the maximum width may be within a range of ±10% of the width of the first groove.

Additionally, the maximum width of the first groove may be 40% to 100% of the minimum width of the protruding pattern.

The minimum separation distance between an indentation part of the protrusion pattern and another indentation part may be smaller than the minimum separation distance between a protrusion pattern and another protrusion pattern.

Additionally, from a plan view, the portion surrounding the first groove may have a color with lower saturation or lower brightness in HSV coordinates than the other portions.

The surface distortion formed by the bottom surface of the first groove may be greater than the surface distortion of the top surface of the protruding pattern.

Assuming that the first groove is a circle with an area equivalent to that of the first groove, and that the indentation is an arc with an area equivalent to that of the first groove, the radius of curvature of the arc is in the range of ±10% of the radius of the circle. It may be within.

In addition, the pattern layer further includes one or more trenches formed in a concentric or radial shape, and the ratio of the area occupied by the trenches to the total area of the polishing pad may be in the range of 10% to 50%.

A polishing pad according to another embodiment of the present invention for solving the above problems includes a support layer; and a pattern layer disposed on the support layer, including a base and a plurality of protruding patterns disposed on the base, wherein the plurality of protruding patterns include a first protruding pattern and a second protruding pattern spaced apart from each other, A first protruding pattern having a first groove recessed from the upper surface, and a second protruding pattern having a planar indentation with an edge recessed, wherein the distance from the other surface of the pattern layer to the base surface of the first groove is, It is within ±10% of the distance from the other side of the layer to the base of the indentation, or the maximum depth of the first groove is within ±10% of the maximum depth of the second groove formed in the base.

A polishing pad according to another embodiment of the present invention to solve the above problem includes a support layer; and a pattern layer disposed on the support layer, including a base and a plurality of protruding patterns disposed on the base, wherein the protruding pattern has a first groove having an at least partially vertical inner wall, The base has a second groove with an inner wall that is at least partially vertical in cross-section.

A polishing device according to an embodiment of the present invention for solving the above other problems includes the polishing pad described above.

A method of manufacturing a polishing pad according to an embodiment of the present invention to solve the above further problem is a method of manufacturing a polishing pad including a pattern layer, or a method of manufacturing a pattern layer, wherein a pattern layer including a protruding pattern is formed. steps; and irradiating a laser to the pattern layer, wherein in the step of irradiating the laser, the laser is irradiated at least partially to the protruding pattern, forming a first groove on the upper surface of the protruding pattern or a planar indentation of an edge of the protruding pattern. build wealth

Specific details of other embodiments are included in the detailed description.

According to embodiments of the present invention, even though the polishing process continues, the surface roughness or topography of the polished surface can be stably maintained, and the polishing rate and polishing uniformity can be improved. In addition, even if the surface of the object to be polished has a slight curve, it is possible to follow the curve in the vertical direction according to the curve of the surface of the object, which has the effect of improving the polishing rate and polishing uniformity.

In addition, the polishing rate can be controlled from factors such as the pattern structure of the polishing pad surface, the length of the pattern, and the contact surface of the pattern, and the use of slurry is possible through the shape and arrangement of the unique protruding pattern according to embodiments of the present invention. Efficiency can be improved

Moreover, while elements such as the structure, length, and/or contact area of the protrusion pattern are configured to satisfy a predetermined range as described above, the edge of the protrusion pattern may have an indentation of a specific size. The indented portion may contribute to an increase in the circumferential length of the protruding pattern.

That is, even when the minimum pattern width that requires control in the process and/or process equipment is relatively large, the protruding pattern may have a perimeter length that is higher than the conventional level. Therefore, process equipment can be simplified and the manufacturing cost of the polishing pad and polishing device can be reduced.

Alternatively, if the minimum pattern width that requires control in the process and/or process equipment is configured to be small, a higher peripheral length can be achieved and the polishing rate of the polishing pad can be further increased compared to the protruding pattern of a conventional polishing pad.

Effects according to embodiments of the present invention are not limited to the contents exemplified above, and further various effects are included in the present specification.

1 is a perspective view of a polishing device according to an embodiment of the present invention.
Figure 2 is a plan layout of the polishing pad of Figure 1;
Figure 3 is a plan view showing the arrangement of the protruding patterns of Figure 2.
Figure 4 is an enlarged perspective view showing a protrusion pattern of Figure 3.
Figure 5 is an enlarged cross-sectional perspective view showing the vicinity of area A of Figure 2.
FIG. 6A is a cross-sectional view of the polishing pad of FIG. 5.
FIG. 6B is a cross-sectional view of the polishing pad of FIG. 2, showing a position where no trench exists.
Figure 7 is a reference diagram for explaining surface skewness.
FIG. 8 is a schematic diagram showing a state in which the polishing pad of FIG. 2 is in contact with a substrate to be polished, and FIG. 9 is a schematic diagram compared to FIG. 8.
FIG. 10 is another schematic diagram showing a state in which the polishing pad of FIG. 2 is in contact with a substrate to be polished, and FIG. 11 is a schematic diagram compared to FIG. 10.
Figure 12 is a plan view showing the arrangement of protruding patterns of a polishing pad according to another embodiment of the present invention.
Figure 13 is a cross-sectional perspective view of the polishing pad of Figure 12.
Figure 14 is a cross-sectional view of the polishing pad of Figure 13.
Figure 15 is a plan view showing the arrangement of protruding patterns of a polishing pad according to another embodiment of the present invention.
Figure 16 is a cross-sectional perspective view of the polishing pad of Figure 15.
Figure 17 is a cross-sectional view of the polishing pad of Figure 16.
18 to 24 are plan views showing the arrangement of protruding patterns of a polishing pad according to still further embodiments of the present invention.
Figures 25 and 26 are cross-sectional views showing a method of manufacturing a polishing pad according to an embodiment of the present invention.
Figure 27 is a cross-sectional view showing a method of manufacturing a polishing pad according to another embodiment of the present invention.
Figure 28 is a cross-sectional view showing a method of manufacturing a polishing pad according to another embodiment of the present invention.

The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms, and only the embodiments serve to ensure that the disclosure of the present invention is complete, and those skilled in the art It is provided to fully inform the person of the scope of the invention, and the present invention is only defined by the scope of the claims. That is, various changes may be made to the embodiments presented by the present invention. The embodiments described below are not intended to limit the embodiments, but should be understood to include all changes, equivalents, and substitutes therefor.

The size, thickness, width, length, etc. of components shown in the drawings may be exaggerated or reduced for convenience and clarity of explanation, so the present invention is not limited to the form shown.

Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used with meanings that can be commonly understood by those skilled in the art to which the present invention pertains. Additionally, terms defined in commonly used dictionaries are not interpreted ideally or excessively unless clearly specifically defined.

Spatially relative terms such as 'above', 'upper', 'on', 'below', 'beneath', and 'lower' are used in the drawing. As shown, it can be used to easily describe the correlation between one element or component and other elements or components. Spatially relative terms should be understood as terms that include different directions of the element when used in addition to the direction shown in the drawings. For example, when an element shown in a drawing is turned over, an element described as 'below or beneath' another element may be placed 'above' the other element. Accordingly, the illustrative term 'down' may include both downward and upward directions.

As used herein, 'and/or' includes each and every combination of one or more of the mentioned items. Additionally, the singular form also includes the plural form unless specifically stated in the phrase. As used herein, 'comprises' and/or 'comprising' do not exclude the presence or addition of one or more other components in addition to the mentioned components. The numerical range expressed using 'to' indicates a numerical range that includes the values written before and after it as the lower limit and upper limit, respectively.

Even if there is no separate mention in this specification, a component expressed by a certain number is substantially the same as or extremely similar to a component expressed by another number, meaning that it is within ±10%.

In this specification, when referring to components, ordinal modifiers such as 'first component', 'second component', '1-1 component', etc. are used to distinguish one component from another component. It just happens. Accordingly, the first component referred to below may be referred to as the second component within the scope of the technical idea of the present invention. For example, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment. Also, of course, what is referred to as a first component in the description of the invention may be referred to as a second component in the claims.

In this specification, the first direction (X) refers to any direction, and the second direction (Y) refers to another direction that intersects or is perpendicular to the first direction (X) in a plane. Additionally, the third direction (Z) refers to another direction that intersects or is perpendicular to the plane. In some cases, the first direction (X) and the second direction (Y) may each be parallel to the horizontal direction, and the third direction (Z) may be parallel to the direction of gravity, but the present invention is not limited thereto.

Unless otherwise defined, 'plane viewpoint' means a viewpoint viewed in a direction perpendicular to and parallel to the plane to which the first direction (X) and the second direction (Y) belong. Additionally, unless otherwise defined, 'overlapping in one direction' means that a plurality of components are overlapped and arranged when viewed in a direction parallel to the one direction.

In this specification, the term 'protrusion pattern' used refers to a structure with a shape that protrudes from a certain reference plane. The planar arrangement of the patterns may be regular or irregular, or some of the patterns may be arranged regularly to form a colony pattern, and the cluster patterns may be arranged regularly.

Even when a plurality of protruding patterns come together to form a cluster pattern of a specific shape, and the cluster patterns are arranged substantially regularly, the term protrusion pattern refers to any one of a plurality of protruding patterns forming one cluster pattern. can be used as

In this specification, the term 'closed loop' used refers to a figure in which a point on a line forming the figure moves in one direction and returns to the starting point, and includes a closed curve, but does not necessarily include a closed curve. This includes cases where the shape does not consist solely of curves.

Hereinafter, the present invention will be described in detail with reference to the attached drawings.

1 is a perspective view of a polishing device according to an embodiment of the present invention.

Referring to FIG. 1, the polishing device 1 according to this embodiment includes a polishing platen 10 connected to a rotating shaft and a polishing pad 11 disposed on the polishing platen 10, and the polishing pad 11 ) may further include a nozzle 60 and/or a carrier 40 for supplying the slurry 70 on the polishing surface. Although the present invention is not limited thereto, the polishing device 1 according to this embodiment may not require a conditioner for controlling the surface roughness of the polishing surface of the polishing pad 11.

The polishing platen 10 is roughly shaped like a disk and can rotate, for example, counterclockwise. Additionally, the polishing platen 10 can stably support the polishing pad 11 on its top. That is, the polishing platen 10 can provide the same function as a rotary table.

The polishing pad 11 may be placed on the polishing platen 10 . The upper surface of the polishing pad 11 in contact with the substrate 50 to be polished may form a polishing surface. Although not shown in FIG. 1, fine-sized patterns and/or trenches may be formed on the polishing surface, that is, the upper surface, of the polishing pad 11. The shape and morphology of the polishing surface of the polishing pad 11 will be described in detail later with reference to FIG. 2 and the like.

The substrate 50 to be polished may be eccentrically aligned with the rotation axis of the polishing platen 10 or the rotation axis of the polishing pad 11 so that its position is fixed. The substrate to be polished 50 may be fixed by a carrier 40 connected to a rotation axis and rotated by the carrier 40 . The rotation direction of the substrate to be polished 50 may be opposite to the rotation direction of the polishing pad 11, but the present invention is not limited thereto, and the rotation direction of the substrate to be polished 50 and the polishing pad 11 are the same. You may. The substrate 50 to be polished in contact with the polishing pad 11 may be a semiconductor wafer substrate, a display substrate, etc., but of course, the present invention is not limited thereto.

The nozzle 60 may be spaced apart from the polishing pad 11 and supply the slurry 70 to the polishing surface of the polishing pad 11 . In this specification, the term 'slurry' may be used with approximately the same meaning as polishing liquid or polishing particles. The slurry 70 flows on the polishing surface of the polishing pad 11 by the centrifugal force generated by the rotation of the polishing pad 11, and at least a portion penetrates between the polishing pad 11 and the substrate 50 to be polished. It can contribute to polishing through chemical reactions.

Hereinafter, the polishing pad 11 will be described in more detail with further reference to FIGS. 2 to 6 .

Figure 2 is a plan layout of the polishing pad of Figure 1; Figure 3 is a plan view showing the arrangement of the protruding patterns of Figure 2. Figure 4 is an enlarged perspective view showing a protrusion pattern of Figure 3. Figure 5 is an enlarged cross-sectional perspective view showing the vicinity of area A of Figure 2. FIG. 6A is a cross-sectional view of the polishing pad of FIG. 5. FIG. 6B is a cross-sectional view of the polishing pad of FIG. 2, showing a position where no trench exists.

With further reference to FIGS. 2 to 6 , the polishing pad 11 according to this embodiment may be approximately circular in plan view. Additionally, the polishing pad 11 may include a support layer 100 and a pattern layer 200 disposed on the support layer 100. In this embodiment, the polishing pad 11 includes a support layer 100 and a pattern layer 200, but in other embodiments, an additional layer is interposed between the support layer 100 and the pattern layer 200, or Of course, additional layers may be disposed on the back of the support layer 100.

The upper surface of the protruding pattern 230 (or pattern structure, or polishing pattern, or pattern portion) of the pattern layer 200 may entirely form a polishing surface. That is, the protruding pattern 230 may be configured for polishing. This will be described in detail later. The support layer 100 and the pattern layer 200 may each include a material having a certain flexibility.

In an exemplary embodiment, the strength, rigidity, and/or hardness of the support layer 100 may be less than the strength, rigidity, and/or hardness of the pattern layer 200. That is, the support layer 100 may have greater flexibility and a smaller modulus of elasticity than the pattern layer 200. The elastic modulus includes loss modulus and/or storage modulus.

Through this, polishing occurs even when the surface of the substrate 50 to be polished has a fine curve, when the planarization characteristics required for the substrate 50 to be polished are very high, and/or even when the polishing pad 11 has a fine curve. The protruding pattern 230 formed on the upper surface of the pad 11 may adhere closely to the curve of the substrate 50 to be polished to perform polishing. That is, the polishing pad 11 can be made to follow the surface of the substrate 50 to be polished. This will be described later along with FIGS. 8 to 11.

The support layer 100 and the pattern layer 200 may be made of the same or different materials. As a non-limiting example, the support layer 100 and the pattern layer 200 may include substantially the same polymer material. Examples of the polymer materials include (poly)urethane (PU), (poly)(meth)acrylate, (poly)epoxy, and acrylic. Nitrile butadiene styrene (ABS), (poly)etherimide, (poly)amide, (poly)propylene, (poly)butadiene ), polyalkylene oxide, (poly)ester, (poly)isoprene, (poly)styrene, (poly)ethylene ( (poly)ethylene), (poly)carbonate, polyfluorene, polyphenylene, polyazulene, polypyrene, polynaphthalene, poly-p-phenylenevinylene, polypyrrole, polycarbazole, poly It may include indole, polyaniline, or a combination thereof.

The rigidity of the support layer 100 and the pattern layer 200 may be controlled through the degree of cross-linking of the polymer material, but the present invention is not limited thereto.

The support layer 100 has an approximately circular shape when viewed in plan, and may provide a function of supporting the pattern layer 200 on its top. The lower limit of the minimum thickness T1 of the support layer 100 may be about 1 mm or more, or about 2 mm or more, or about 3 mm or more. If the thickness of the support layer 100 is less than the above range, the support layer 100 may not exhibit sufficient elasticity or strain rate and it may be difficult for the polishing pad 11 to follow the curve of the substrate 50 to be polished. The upper limit of the thickness T1 of the support layer 100 is not particularly limited, but may be, for example, about 5 mm or less, or about 4 mm or less.

In this specification, when a plurality of upper and lower limits of a numerical range are described, the numerical range disclosed in this specification is a numerical range between an upper limit arbitrarily selected among the plurality of upper limits and a lower limit arbitrarily selected among the plurality of lower limits. It should be understood as initiating.

The pattern layer 200 may be disposed on the support layer 100 . In an exemplary embodiment, the pattern layer 200 may be directly disposed on the support layer 100 without a separate bonding layer. The pattern layer 200 may include a base 210 and a plurality of protruding patterns 230 disposed on the base 210. There may be a plurality of protruding patterns 230 spaced apart from each other on the base 210 . Although not shown in the drawing, the pattern layer 200 may have pores distributed therein. Additionally, the support layer 100 may also have pores dispersed therein. The average particle size of the pores of the support layer 100 may be larger than the average particle size of the pores of the pattern layer 200. Alternatively, the support layer 100 may have a larger porosity than the pattern layer 200, which will be described later, and specifically, compared to the protruding pattern 230.

The base 210 and the protruding pattern 230 are formed integrally and continuously without physical boundaries, and may be made of the same material. In another embodiment, the base 210 and the protruding pattern 230 may have physical boundaries and may be made of different materials. In this case, the strength, rigidity, and/or hardness of the base 210 may be less than that of the protruding pattern 230.

The base 210 may be a portion that overlaps a plurality of protruding patterns 230 spaced apart from each other in the third direction (Z). Additionally, the base 210 occupies most of the area corresponding to the polishing pad 11 when viewed from a plan view and may be a portion that covers the support layer 100 . Alternatively, the base 210 may refer to the remaining portion of the pattern layer 200 excluding the protruding pattern 230, which will be described later.

The upper surface of the base 210 may define a reference surface 210t, a reference height, or a reference position. The reference surface 210t may refer to the bottom surface at which the protruding pattern 230 structure is recognized. From a plan view, the area occupied by the reference surface 210t, excluding the area occupied by the second groove 210h1 and the third groove 210h2, which will be described later, is approximately 40% to 80% of the total area of the polishing pad 11, or approximately It may be in the range of 45% to 75%, or approximately 50% to 70%. The reference surface 210t may be a reference for the thickness of the base 210, the height of the protruding pattern 230, and the depth of the second groove 210h1 and the third groove 210h2 formed on the base, which will be described later.

The lower limit of the maximum thickness T2 of the base 210 may be about 0.01 mm or more, or about 0.05 mm or more, or about 0.1 mm or more, or about 0.5 mm or more, or about 1.0 mm or more. If the thickness of the base 210 is less than the above range, it may be difficult for the polishing pad 11 to follow the curve of the substrate 50 to be polished. The upper limit of the thickness of the base 210 is not particularly limited, but may be, for example, about 3.0 mm or less, or about 2.5 mm or less, or about 2.0 mm or less, or about 1.5 mm or less. The thickness T2 of the base 210 may refer to the distance from the lower surface of the pattern layer 200 to the upper surface excluding the protruding pattern 230, that is, the reference surface 210t.

A plurality of protruding patterns 230 may be disposed on one base 210 . The protruding pattern 230 forms the uppermost level of the polishing pad 11 and may be a part that forms a polishing surface. That is, even when the pattern layer 200 has a multi-stage structure, the protruding pattern 230 may mean a protruding portion that can contribute to actual polishing.

At least some of the plurality of protruding patterns 230 may have different shapes. This may be due to the first groove 230h and the indented portion 230c, which will be described later.

In an exemplary embodiment, one of the protruding patterns 230 may have a substantially square shape when viewed from a plan view, but the present invention is not limited thereto. Additionally, the protruding pattern 230 has a substantially square shape, but may not overlap with the trenches 300, which will be described later, in the third direction (Z). For example, the protruding pattern 230 may not be formed at a position overlapping the trench 300, or the already formed protruding pattern 230 may be removed using a laser or the like.

In addition, Figure 2 and the like illustrate a state in which the plurality of protruding patterns 230 are arranged substantially regularly from a plan view, but in other embodiments, the plurality of protruding patterns 230 are arranged substantially irregularly or arbitrarily arranged. It can have a random arrangement. In another embodiment, a plurality of protruding patterns 230 are gathered to form one cluster pattern, and the cluster pattern may be arranged substantially regularly. In this case, the plurality of protruding patterns 230 within a cluster pattern may be arranged with regularity within the cluster pattern.

In this embodiment, the protruding patterns 230 may be repeatedly arranged along at least two directions to form a regular arrangement. For example, the protruding patterns 230 may be arranged repeatedly with substantially the same spacing along the first direction (X) and the second direction (Y), forming an approximate matrix arrangement.

The size of the protruding pattern 230 may be a major factor affecting the polishing rate and polishing unevenness (NU) of the polishing pad 11. The inventors of the present invention confirmed that the polishing rate can be controlled by the circumferential length and/or area of the protruding pattern 230 and completed the present invention. This will be described later.

In an exemplary embodiment in which the protruding pattern 230 is substantially square in plan, the maximum width Wmax of the protruding pattern 230 may be formed in a substantially diagonal direction. On the other hand, the minimum width (Wmin) of the protrusion pattern 230 may correspond to the length of one side. In this specification, the minimum width of a protruding pattern refers to the width of the portion having the minimum length among the planar length, width, or width of any one protruding pattern 230 that is physically separated and spaced apart from other protruding patterns and is independent. do.

In addition, the minimum width refers to the minimum length that needs to be controlled in the process and/or process equipment for forming the protruding pattern 230, and does not take into account the length reduced by the indented portion 230c, which will be described later, and does not take into account the length reduced by the indentation 230c, which will be described later. It can mean the shortest distance between Expressed differently, the minimum width may mean the minimum width of any protruding pattern 230 that does not have any indented portion 230c.

The maximum width (Wmax) of the protrusion pattern 230 may vary depending on the planar shape of the protrusion pattern 230, but for example, the maximum width (Wmax) of the protrusion pattern 230 is about 1.0 mm or less, or about 0.8 mm or less. , or about 0.5 mm or less, or about 0.3 mm or less.

The minimum width (Wmin) of the protruding pattern 230 may correspond to the length of one side. The lower limit of the minimum width (Wmin) of the protruding pattern 230 is about 20 μm or more, or about 30 μm or more, or about 40 μm or more, or about 50 μm or more, or about 60 μm or more, or about 70 μm or more, Or it may be about 80 μm or more, or about 90 μm or more, or about 100 μm or more. The upper limit of the minimum width (Wmin) is not particularly limited, but may be less than the maximum width (Wmax).

As a non-limiting example, the minimum width of the protruding pattern 230 may range from about 40 μm to 120 μm, or from about 50 μm to 100 μm, or from about 55 μm to 100 μm. As described above, the smaller the minimum width of the protruding pattern 230, that is, the smaller the process width that requires control, the more sophisticated manufacturing equipment is required and the manufacturing cost may increase. On the other hand, if the minimum width of the protruding pattern 230 increases, a sufficient circumferential length of the protruding pattern formed by the protruding pattern 230 cannot be formed, and polishing efficiency may decrease.

The height H of the protruding pattern 230 may affect the polishing characteristics and durability of the polishing pad 11. The minimum height (H) of the protruding pattern 230 means the shortest vertical distance from the upper surface 210t of the base 210, that is, the reference surface 210t, to the upper surface 230t of the protruding pattern 230. Here, the top surface 230t of the protruding pattern 230 may form a polishing surface.

The minimum height (H) of the protruding pattern 230 is about 10 μm or more and 1,500 μm or less, or about 15 μm or more and 1,000 μm or less, or about 20 μm or more and 500 μm or less, or about 25 μm or more and 300 μm or less, or about 30 μm or more. It may be in the range of ㎛ or more and 200 ㎛ or less, or about 35 ㎛ or more and 150 ㎛ or less, or about 40 ㎛ or more and 100 ㎛ or less.

The height (H) of the protruding pattern 230 may be correlated with the minimum width (Wmin) of the protruding pattern 230. That is, when the length-width ratio of the protruding pattern 230 on the vertical cross-section becomes too large, the polishing pad 11 rotates and moves in a plane direction, for example, the first direction (X) and the second direction (Y) in the process of coming into close contact with the substrate 50 to be polished. Tilt or distortion may occur in any direction within the plane to which it belongs, and the designed polishing may not be fully performed. On the other hand, if the height H of the protruding pattern 230 is too small, the lifespan of the polishing pad 11 may be excessively shortened due to damage or wear on the top of the protruding pattern 230 as the polishing process is repeated.

In view of the above, the minimum height (H) of the protruding pattern 230 is about 0.5 to 2.5 times, or about 0.6 to 2.0 times, or about 0.7 to 1.8 times, or about It may range from 0.8 times to 1.7 times, or from about 0.9 times to 1.6 times, or from about 1.0 times to 1.5 times. As a non-limiting example, the height of the protruding pattern H may be in the range of about 0.01 mm to 1.5 mm, and preferably in the range of about 50 μm to 100 μm.

In an exemplary embodiment, one of the protruding patterns 230 may have a first groove 230h located on its upper surface and/or an indented portion 230c located at an edge in a plan view. In this specification, the term 'groove' may be used interchangeably with terms such as groove. Additionally, in some cases, the groove or groove may be referred to as a 'hole' or the like. FIG. 4 illustrates a case where one protrusion pattern 230 has both a first groove 230h and an indented portion 230c. Specifically, FIG. 4 illustrates a case where one protruding pattern 230 has one first groove 230h and three indentations 230c.

However, in some embodiments, one protrusion pattern 230 has both a first groove 230h and an indentation 230c, and another protrusion pattern has a first groove 230h and an indentation 230c. Alternatively, another protruding pattern may have an indented portion 230c and not have a first groove 230h.

The first groove 230h (e.g., a protruding pattern groove, a protruding pattern groove, or a protruding pattern vertical hole) is exposed on the upper surface of the protruding pattern 230 and may be located in the central area rather than adjacent to the edge from a plan view. there is. That is, the first groove 230h has a shape having a boundary that is distinct from the edge boundary of the protruding pattern 230, and the first groove 230h may have a closed loop shape in plan. 4 and the like illustrate a case where the first groove 230h is approximately circular in plan, but the present invention is not limited thereto. In other embodiments, the planar shape of the first groove 230h is elliptical or distorted. It may be a circle, an irregular closed curve, or a polygonal shape such as a triangle, square, hexagon, or octagon, or may have an arbitrary shape.

As will be described later, the first groove 230h causes a decrease in the area of the upper surface 230t of the protrusion pattern 230, that is, a decrease in the polishing area, compared to a virtual protrusion pattern without the first groove 230h. You can. Additionally, the first groove 230h may contribute to an increase in the circumferential length of the polished surface compared to the virtual protrusion pattern. This will be described in detail later.

The first groove 230h recessed from the upper surface of the protruding pattern 230 to the inside, that is, toward the base 210, may form a first groove base surface 230hb and a first groove inner wall 230hs. The height of the first groove base surface 230hb may be located above the height of the upper surface of the base 210, that is, the height of the reference surface 210t, but the present invention is not limited thereto. The planar shape of the first groove base surface 230hb may approximately correspond to the planar shape of the first groove 230h. The shortest distance from the first groove base surface 230hb to the reference surface 210t may define the depth D1 of the first groove 230h.

Additionally, the first groove inner wall 230hs may include a portion that is at least partially vertical from a cross-sectional view. 4 and the like illustrate a case where the first groove inner wall 230hs of the first groove 230h is completely vertical, that is, it consists only of a portion extending in the third direction (Z), but the present invention is not limited thereto. . The length of the vertical portion may be, for example, about 100 μm or more, or about 300 μm or more, or about 500 μm or more, or about 1,000 μm or more.

In some embodiments, the first groove inner wall 230hs may include a portion partially extending in the third direction (Z) in cross-section, and may further partially include a curved portion in cross-section or an inclined portion. It may be possible. As a non-limiting example, the ratio occupied by the vertical portion of the total length of the first groove inner wall 230hs, that is, the maximum depth D1 of the first groove 230h, may be about 50% or more and 100% or less.

The indented portion 230c is exposed on the upper surface of the protruding pattern 230 and is located at the edge of the protruding pattern 230 from a plan view, that is, the shape of the indented portion 230c may form an edge. Like the first groove 230h, the indented portion 230c is a type of recessed pattern that is recessed from the upper surface of the protruding pattern 230, but is different in that the edge does not have a closed curve when viewed from a plan view. That is, depending on the perspective of the description, the indented portion 230c may also be understood as a protruding pattern groove whose edges do not have a closed curve shape, for example, a second protruding pattern groove. In other words, in the following description of the structure formed in the protruding pattern 230, the first groove 230h and the indented portion 230c are referred to separately, but the indented portion 230c may also be understood as a groove.

The indented portion 230c may be exposed on the side and/or top surface of the protruding pattern 230 . The planar shape of the indented portion 230c may be substantially curved, that is, a curved shape. Figure 4 and other examples illustrate a case where the indented portion 230c is approximately a circular arc on a plane. The shape of the indentation 230c may be a superior arc or an inferior arc. However, the present invention is not limited to this, and may be a partial shape of any figure.

As will be described later, the indented portion 230c may cause a decrease in the top surface area of the protruding pattern 230, that is, a decrease in the polishing area, compared to a virtual protruding pattern without the indented portion 230c. Additionally, the indented portion 230c may contribute to an increase in the length around the edge of the polishing surface compared to the virtual protruding pattern. This will be described in detail later.

The indented portion 230c recessed inward from the side of the protruding pattern 230 may form an indented portion base surface 230cb and an indented inner wall 230cs. The height of the indented base surface 230cb may be located above the height of the upper surface of the base 210, that is, the height of the reference surface 210t. In an exemplary embodiment, the position of the indented bottom surface 230cb and the position of the first groove bottom surface 230hb may be substantially the same or similar. To be more specific, the shortest distance from the other surface (lower surface) of the pattern layer 200 to the bottom surface of the indentation 230cb is about ±10% of the shortest distance from the other surface of the pattern layer 200 to the first groove base surface 230hb. %, or about ±8%, or about ±6%, or about ±5%.

Additionally, the indented inner wall 230cs may include a portion that is at least partially vertical when viewed in cross section. 4 and the like illustrate a case where the indented portion inner wall 230cs of the indented portion 230c is completely vertical, that is, composed of only a portion extending in the third direction (Z), but the present invention is not limited thereto, and several In an embodiment, the indented inner wall 230cs includes a portion partially extending in the third direction (Z) in cross-section, and may further partially include a curved portion in cross-section, or may further include an inclined portion. . As a non-limiting example, the length of the vertical portion may be about 100 μm or more, or about 300 μm or more, or about 500 μm or more, or about 1,000 μm or more. In addition, the ratio occupied by the vertical portion of the total length of the inner wall 230cs of the indentation portion may be about 50% or more and 100% or less.

As described above, the indented portion 230c is located at the edge of the protruding pattern 230 on a plane, and the height of the base surface 230cb of the indented portion is lower than the height of the uppermost surface 230t, that is, the polished surface, of the protruding pattern 230. Since it is located higher than the reference surface 210t, that is, the height of the upper surface of the base 210, the protruding pattern 230 may have a stepped shape due to the indented portion 230c from a cross-sectional view. That is, the base surface of the indentation 230cb may form a stepped surface of the edge of the protruding pattern 230. In other words, from a cross-sectional view, a certain protrusion pattern 230 has a top surface 230t partially extending in the horizontal direction, an inner wall of the indentation 230cs extending in the third direction (Z) therefrom, and an inner wall of the indentation 230cs extending in the horizontal direction therefrom. The base surface of the indentation 230cb and the side surface 230s extending from it in the third direction (Z) may have a step shape connected sequentially. The side surface 230s of the above-described protruding pattern 230 may be connected to the upper surface 210t of the base 210.

From a plan view, the size of the above-described first grooves 230h may be larger than the size occupied by the indented portion 230c. For example, the planar area of the first groove 230h, which is the smallest among the first grooves of a certain protruding pattern 230, is that of the indentation 230c with the largest width among the indentations of the protruding pattern 230. It can be larger than the area on a plane. As will be described later, the first groove 230h and the indentation 230c formed in the protruding pattern 230 of the polishing pad 11 according to this embodiment are formed by laser irradiation, and are formed on the plane of the protruding pattern 230. The laser irradiated to the inside forms a first groove 230h, and the laser irradiated to the planar edge of the protruding pattern 230 to only partially remove the protruding pattern 230 can form an indentation 230c. . Accordingly, the first groove 230h may have a larger area than the indented portion 230c.

In addition, in terms of length rather than area, the width (W _c ) of the indentation having the largest width among the indentations of any protruding pattern 230 or a plurality of protruding patterns 230 located within a predetermined inspection area is The width of one groove 230h may be within a range of about ±10%, or about ±8%, or about ±6%, or about ±5% of the maximum width (W _h ). When the planar shape of the first groove 230h is circular, the maximum width (W _h ) may mean the diameter. This may be because, as described above, the first groove 230h and the indented portion 230c are formed through the same process.

In addition, from a plan view, assuming that the first groove 230h is a virtual circle with an area equivalent to the first groove 230h, and that the indented portion 230c is a virtual circle with an area equivalent to the first groove 230h, The radius of the virtual circle may be within a range of about ±10%, or about ±8%, or about ±6%, or about ±5% of the radius of the virtual circular arc. Likewise, this may be because the first groove 230h and the indented portion 230c are formed through the same process. Here, the diameter of the virtual circle may correspond to the maximum width (W _h ) of the above-described first groove (230h).

As a non-limiting example, the maximum width (W _h ) of the first groove 230h and the maximum width (W _c ) of the indented portion 230c are about 15 μm to 120 μm, or about 20 μm to 100 μm, or about 25 μm to about 25 μm. It may be in the range of 90 μm, or about 30 μm to 60 μm.

In another aspect, the maximum width (W _h ) of the first groove 230h and/or twice the radius of the virtual arc formed by the indented portion 230c is approximately the minimum width (Wmin) of the protruding pattern 230. It may range from 40% to 100%, or from about 45% to less than 100%, or from about 50% to less than 100%, or from about 55% to 95%, or from about 60% to 90%.

If the maximum width (W _h ) of the first groove 230h/diameter of the virtual arc is too small compared to the minimum width (Wmin) of the protrusion pattern 230, the first groove is added to the protrusion pattern of a relatively small size. The laser irradiation area required for formation may be excessively reduced and cause an increase in manufacturing costs. In another aspect, when forming a predetermined laser irradiation area, the minimum width of the protruding pattern 230 may be greatly increased.

On the other hand, when the maximum width (W _h ) of the first groove 230h/diameter of the virtual arc is too large compared to the minimum width (Wmin) of the protrusion pattern 230, the protrusion pattern 230 is removed by laser irradiation. Problems may occur, such as the portion becoming too large to form a closed loop-shaped groove on a plane, or the protruding pattern 230 collapsing.

The pattern layer 200 of the polishing pad 11 according to this embodiment may have not only a protruding pattern 230 but also a base 210 with one or more grooves. For example, the base 210 may have a second groove 210h1 and/or a third groove 210h2.

The second groove 210h1 (eg, a first base groove, a first base groove, or a first base vertical hole) may be exposed on the upper surface of the base 210. 5 and other examples illustrate a case where the second groove 210h1 has a substantially circular shape in plan view, but the present invention is not limited thereto. The second groove 210h1 may have a shape corresponding to the first groove 230h.

Additionally, the third groove 210h2 (eg, a second base groove, a second base groove, or a second base vertical hole) may be exposed on the upper surface of the base 210. 5 and other examples illustrate a case where the third groove 210h2 has a substantially circular arc shape in plan, but the present invention is not limited thereto. The third groove 210h2 and the indented portion 230c may form a substantially circular shape in plan view.

The second groove 210h1 and the third groove 210h2 are both formed in the base 210 and are the same in that they form a closed curve shape on a plane, but can be referred to differently through several differences as follows.

First, the second groove 210h1 may be spaced apart from the protruding pattern 230 . On the other hand, the third groove 210h2 may be located adjacent to the protruding pattern 230. For example, from a plan view, the third groove 210h2 has a substantially arc-shaped shape, and any straight side of the third groove 210h2 may coincide with an edge of the protruding pattern 230.

Accordingly, the third groove 210h2 may have a smaller plan size than the second groove 210h1 and the first groove 230h. On the other hand, the planar area size of the second groove 210h1 may be within the range of about ±10%, or about ±8%, or about ±6%, or about ±5% of the planar area size of the first groove (230h). You can.

The second groove 210h1 recessed inward from the upper surface of the base 210 may form a second groove base surface 210h1b and a second groove inner wall 210h1s. Additionally, the third groove 210h2 recessed inward from the upper surface of the base 210 may form a third groove base surface 210h2b and a third groove inner wall 210h2s.

The height position of the second groove base surface 210h1b and the height position of the third groove base surface 210h2b may be substantially the same or may be extremely similar. In addition, the height position of the second groove base surface 210h1b and/or the third groove base surface 210h2b may be lower than the height position of the first groove base surface 230hb and the height position of the reference surface 210t. This may be because the second groove 210h1 and the third groove 210h2 are depressed from the upper surface of the base 210.

In addition, the depth D2 of the second groove 210h1 and/or the depth of the third groove 210h2 is about ±10%, or about ±8%, of the depth D1 of the above-described first groove 230h, Or it may be within a range of about ±6%, or about ±5%. The depth D1 of the first groove 230h is the distance from the top surface 230t of the protruding pattern 230 to the first groove base surface 230hb, and the depth of the second groove 210h1 and the third groove 210h2 is Depth D2 means the distance from the reference surface 210t to their base surfaces.

The second groove inner wall 210h1s and/or the third groove inner wall 210h2s may include a portion that is at least partially vertical when viewed in cross section. The present invention is not limited thereto, but as will be described later, the second groove 210h1 and the third groove 210h2 may be formed through the same method as the first groove 230h, and the second groove 210h1 and the inner wall and base surface of the third groove 210h2 are omitted, but may be understood in the same way as the first groove 230h.

In an exemplary embodiment, a first groove 230h different from a first groove 230h of one of the protruding patterns 230, or an indentation 230c different from an indentation 230c, or 1 The minimum separation distance L1 between the groove 230h and any indentation 230c may be smaller than the minimum separation distance L2 between one protrusion pattern 230 and another protrusion pattern 230.

Although the description above was based on the separation distance L1 between the one or more first grooves 230h and/or the indented portions 230c of the protruding pattern 230, this is based on the one or more second grooves 210h1 of the base 210. ) and/or the relationship between the third grooves 210h2. This is because the first to third grooves 230h to 210h2 and the indented portion 230c may be formed through the same method.

That is, the present invention is not limited thereto, but for example, as will be described later, the first groove 230h to the third groove 210h2 and/or the indentation 230c are formed by laser irradiation, and the laser is applied horizontally. Directions can be irradiated regularly and repeatedly in predetermined repeating units. At this time, if the repetition distance of the area to which the laser is irradiated, that is, the minimum separation distance (L1) between the first grooves and/or indentations, is greater than the minimum separation distance (L2) between the protruding patterns 230, the first groove ( A protruding pattern may occur in which the first groove 230h) and/or the indented portion 230c are not formed, or it may be difficult to form the first groove 230h and/or the indented portion 230c with a sufficient array density.

Meanwhile, the surface roughness (Rsk_base), defined as the skewness of the above-described first groove base surface 230hb and the indentation base surface 230cb, is the upper surface of the base 210 and the uppermost surface 230t of the protruding pattern 230. ) may be different from the surface roughness, which is defined as the skewness of ). For example, the surface distortion of the first groove bottom surface 230hb and/or the indentation bottom surface 230cb is the surface distortion of the top surface 210t of the base 210 and/or the top surface 230t of the protruding pattern 230. It can also be larger than . Additionally, the surface skewness of the second groove base surface 210h1b and/or the second groove base surface 210h1b may be greater than the surface skewness of the upper surface 210t of the base 210.

Here, the surface roughness defined as the skewness of the upper surface 210t of the base 210 and the uppermost surface 230t of the protruding pattern 230 may be due to the pores (not shown) included in the pattern layer 200 that are visible on the surface. there is.

For example, the surface skewness of the first groove bottom surface 230hb to the third groove bottom surface 210h2b and/or the indentation bottom surface 230cb may have a positive value, about 0, or a negative value. Additionally, the surface skewness of the upper surface 210t of the base 210 and/or the uppermost surface 230t of the protruding pattern 230 may have a negative value. In other words, the value obtained by subtracting the skewness of the top surface 210t of the base 210 or the top surface 230t of the protruding pattern 230 from the skewness of the base surfaces 230hb, 210h1b, 210h2b, and 230cb is a positive value greater than 0. It can have a value. The surface roughness may be measured for an inspection area of about 0.1 mm ² or more. The upper limit of the inspection area is not particularly limited, but may be, for example, about 5.0 mm ² .

The present invention is not limited thereto, but for example, as will be described later, when the first grooves 230h to third grooves 210h2 and/or the indentation 230c are formed using a laser irradiated from above, the laser In the process of partially removing the material forming the pattern layer 200, at least a portion of the pores included in the pattern layer 200 may melt or collapse.

In particular, when the upper surface 230t of the protruding pattern 230, that is, the polishing surface, is made to have negative skewness, the device pattern 50b formed on the surface of the substrate to be polished, for example, a wafer, and the overcoating layer 50c pattern thereon are The characteristics can be improved by polishing flatly. In addition, the base surface of the indentation (230cb) has a relatively large skewness, which can improve the characteristics of allowing the slurry flow to stagnate due to too deep pores or allowing residual abrasive particles and polishing by-products to be easily removed without stagnating in deep pores. there is.

In this specification, surface roughness or surface skewness, defined as skewness, may mean a characteristic value indicating the direction and degree of asymmetry with respect to the average value. That is, when the surface skewness in surface roughness has a negative value, it means that there is a large tendency for the surface to be formed by a depressed portion from a roughly or relatively flat surface. On the other hand, when the surface skewness in surface roughness has a positive value, it means that the surface tends to be formed by a protruding portion from a roughly or relatively flat surface. Additionally, when the surface skewness is 0, it means that the ratio of the depressed surface and the protruding surface from an approximately or relatively flat surface is the same. For skewness, see FIG. 7.

For another example, the arrangement density of the pores (not shown) exposed on the top surface 230t and/or the side surface 230s of the protrusion pattern 230 is the first groove base surface 230hb and/or the indentation base surface 230cb. ) may be greater than the array density of the pores exposed to

The protruding pattern 230 of the polishing pad 11 according to this embodiment has the same structure and arrangement as described above and has a polishing area that can exhibit excellent polishing efficiency and/or a perimeter of the outer edge on the plane of the protruding pattern 230. Length can be provided. This will be explained in detail below.

First, the protruding pattern 230 according to the present embodiment has a planar shape such as its maximum width (Wmax) and minimum width (Wmin) and/or a polishing area within a predetermined range using the first groove 230h and the indentation 230c. can be provided.

In an exemplary embodiment, from a plan view, the polishing area, or actual polishing area, occupied by the top surface 230t of the protruding pattern 230 is about 1.0% or more and 80% or less, or about 1.0% or more of the total area of the polishing pad 11. 1.0% or more and 70% or less, or about 1.0% or more and 60% or less, or about 1.0% or more and 50% or less, or about 1.0% or more and 45.0% or less, or about 1.0% or more and 40% or less, or about 1.0% or more and 35% or less, or about 1.0% or more and 30% or less, or about 3.0% or more and 30.0% or less, or about 5.0% or more and 30.0% or less, or about 10.0% or more and 30.0% or less. That is, the lower limit of the polishing area relative to the total area may be about 1.0%, about 3.0%, or about 5.0%. The upper limit of the polishing area relative to the total area may be about 80%, or about 70%, or about 60%, or about 50%, or about 45%, or about 40%, or about 35%, or about 30%. .

In this specification, the term 'polishing area' or 'actual polishing area' used refers to the area where the top of the protruding pattern 230 contacts the substrate 50 to be polished and contributes to polishing. In other words, it means the area occupied by the portion forming the maximum height among the pattern layer 200 of the polishing pad 11. The polishing area may be calculated as the sum of the upper areas of the protruding patterns 230 with respect to the entire area of the polishing pad 11, but for some unit areas, the upper areas of the protruding patterns 230 located within the unit area The sum of can also be used with substantially the same meaning.

As described above, when viewed from a plan view, the protruding pattern 230 may have a first groove 230h visible through its upper surface and a recessed portion 230c recessed inward from the side surface 230s. At this time, the area occupied by the above-mentioned planar protrusion pattern 230 may mean an area excluding the planar area of the first groove 230h and the indented portion 230c. Additionally, when fine pores are formed on the surface of the protruding pattern 230, the area of the pores may be ignored.

For example, as shown in FIG. 3, when the planar shape of a protruding pattern 230 is approximately a square shape with one side length (Wmin), the planar area occupied by the protruding pattern 230 is (Wmin) ×Wmin) may be the area excluding the area occupied by one first groove (230h) and three indentations (230c). Therefore, the area formed by one protruding pattern 230 may be smaller than (Wmin)×(Wmin).

For another example, when the planar area occupied by one of the protruding patterns 230 is expressed as (S), the ratio occupied by the polishing area is (S × n) with respect to the planar area of the polishing pad 11. can be expressed. Here, (n) is the total number of protruding patterns 230 included in the polishing pad 11.

As another example, the ratio of the polishing area may be expressed as an area occupied by the protruding patterns 230 belonging to the target area for a certain target area of the polishing pad 11. In this case, when the area to be checked (eg, inspection area) is set to the x-axis and the area occupied by the protruding patterns 230 in that case is set to the y-axis, the ratio of the polished area can be expressed as the slope of the graph.

When the ratio (%) of the polishing area described above is within the above range, an excellent polishing rate is shown, and polishing characteristics such as the polishing rate can be controlled by modifying the arrangement, shape, and/or size of the protruding pattern 230. Additionally, if the polishing area is too large, the polishing rate may decrease due to a decrease in actual contact pressure and restrictions on the flow of slurry.

Additionally, from a plan view, the ratio of the area occupied by the first groove 230h and the area occupied by the uppermost surface 230t of the protruding pattern 230 may also have a predetermined relationship. Based on any one protrusion pattern 230, the ratio of the area occupied by the one or more first grooves 230h to the area of the uppermost surface 230t of the protrusion pattern 230 is about 5% to 50%, or about 5%. It may range from 10% to 40%, or about 15% to 30%.

In addition, in a predetermined inspection area from a planar view of the polishing pad 11, for example, an inspection area of 1 mm ² , a plurality of values for the sum (S1) of the areas of the upper surfaces 230t of the plurality of protruding patterns 230 are measured. The ratio (S2/S1) of the sum (S2) of the area occupied by the first groove (230h) to the third groove (210h2) and the plurality of indentations (230c) is about 0.5 to 5, or about 0.6 to 4, or about 0.7. to 3, or about 0.8 to 2. When forming the first grooves 230h to third grooves 210h2 and the indented portion 230c at the above ratio, the above-mentioned area ratio and the circumferential length described later can be easily formed.

Next, the protruding pattern 230 according to this embodiment is within a predetermined range using the planar shape such as its maximum width (Wmax) and minimum width (Wmin) and/or the first groove 230h and the indentation 230c. Circumference length can be provided.

In an exemplary embodiment, in a unit area of a planar view, for example, 1 mm ² , the lower limit of the perimeter length per unit area formed by the planar perimeter of the protruding pattern 230 is about 1.0 mm/mm ² or more, or about 3.0 mm/mm/mm. It may be at least mm ² , or at least about 5.0 mm/mm ² , or at least about 8.0 mm/mm ² .

In addition, the upper limit of the perimeter per unit area formed by the planar perimeter of the protruding pattern 230 is about 250.0 mm/mm ² or less, or about 200.0 mm/mm ² or less, or about 150.0 mm/mm ² or less, or about 100.0 mm/mm 2 or less. mm/mm ² or less, or about 50.0 mm/mm ^{2 or} less, or about 30.0 mm/mm ^{2 or} less, or about 24.0 mm/mm ² or less, or about 20.0 mm/mm ² or less, or about 16.0 mm/mm ^{2 or} less You can.

The term 'circumference length per unit area' used in this specification refers to the outer length formed by the polished area of the protruding patterns 230 per unit area (1 mm ² ). In other words, it means the length around the outer or inner edge formed by the uppermost surface 230t of the protruding pattern 230 of the polishing pad 11.

As described above, when viewed from a plan view, the protruding pattern 230 may have a first groove 230h visible through its upper surface and a recessed portion 230c recessed inward from the side surface 230s. At this time, the circumferential length of the above-described protruding pattern 230 will be understood to include the edge length formed by the first groove 230h and the length of the outer edge of the protruding pattern 230 formed by the indented portion 230c. You can. That is, in this specification, the peripheral length of the protruding pattern 230 is not only the outer edge of the protruding pattern 230, but also the perimeter of the closed curve formed by the edge of the first groove 230h having an arbitrary shape on the plane. It is formed including length. Additionally, when fine pores are formed on the surface of the protruding pattern 230, the area of the pores may be ignored.

For example, assuming that the entire square including the four protruding patterns 230 shown in FIG. 3 has an area of 1 mm ² , the perimeter length per unit area can be expressed as (4×L). Here, L refers to the perimeter length formed by one protruding pattern 230. At this time, L may be greater than (4×Wmin). This is because, as described above, the first groove 230h and the indented portion 230c cause an increase in the peripheral length of the protruding pattern 230.

For another example, the perimeter length per unit area may be expressed as the perimeter length formed by the protruding pattern 230 belonging to the target area of the polishing pad 11. In this case, when the area to be confirmed (e.g., inspection area) is set to the x-axis and the total perimeter length formed by the protruding pattern 230 in that case is set to the y-axis, the perimeter length per unit area is the slope of the graph. It can also be expressed as

Meanwhile, in some embodiments, the base 210 of the pattern layer 200 of the polishing pad 11 may have a trench 300 . The trench 300 may perform a channel function to transport and discharge the slurry 70 dropped on the upper surface of the polishing pad 11. Additionally, the trench 300 can prevent hydroplaning between the polishing pad 11 and the substrate 50 to be polished. That is, if the trench 300 is not sufficiently formed, the polishing characteristics may be significantly deteriorated due to water film phenomenon as the rotation speed of the polishing pad 11 increases. On the other hand, if the trench 300 is sufficiently formed, deterioration of polishing characteristics can be prevented despite an increase in rotation speed. If necessary, the term 'trench' used in this specification may be used interchangeably with terms such as channel.

The trench 300 may include a straight first trench 310 extending in the first direction (X), the second direction (Y), and/or the diagonal direction. The first trench 310 may have a shape extending approximately in a radial direction from the center of the circular polishing pad 11. FIG. 2 illustrates a case where eight first trenches 310 are formed inclined in the first direction (X), the second direction (Y), and 45 degrees. Accordingly, the polishing pad 11 can be divided into eight fan-shaped areas with a central angle of approximately 45 degrees. At least a portion of the first trench 310 of the polishing pad 11 according to this embodiment may be extended in the arrangement direction of the protruding pattern 230, that is, in the first direction (X) and the second direction (Y). there is. However, the present invention is not limited thereto.

The first trench 310 may induce the slurry 70 to move or flow in a radial outer direction of the polishing pad 11 due to centrifugal force generated as the polishing pad 11 rotates. Through this, even when the slurry 70 is dropped without the nozzle 60 moving, the slurry 70 can be applied to the entire surface of the polishing pad 11 and prevents excessive agglomeration in some parts. The slurry utilization efficiency can be improved. In some embodiments, the first trench 310 may be configured to become deeper toward the outside.

Additionally, the trench 300 may further include a second trench 320 arranged in a concentric circle with respect to the center of the circular polishing pad 11. Figure 2 illustrates a case where there are three second trenches 320, but of course, the present invention is not limited thereto. Any second trench 320 may be provided to intersect the plurality of first trenches 310 . The second trench 320 may induce the slurry 70 to move or flow in the rotation direction of the polishing pad 11, that is, in the circumferential direction, due to centrifugal force generated as the polishing pad 11 rotates.

Although the present invention is not limited thereto, the slurry 70, which preferentially flows toward the outside of the polishing pad 11 by the first trench 310, rotates the polishing pad 11 by the second trench 320. It can flow in any direction. Therefore, it may be advantageous to form the maximum width of the first trench 310 to be larger than the maximum width of the second trench 320 in terms of preventing agglomeration of the slurry 70.

As a non-limiting example, the width of the radiation trench 310 ranges from about 0.1 mm to 3.0 mm, or from about 0.3 mm to 2.5 mm, or from about 0.5 mm to 2.0 mm, or from about 1.0 mm to 1.5 mm. may be in

In this embodiment, the first trench 310 and the second trench 320 not only assist the flow of the slurry, but also provide a certain fluidity to each pattern layer 200, and as described above, the polishing pad 11 The protruding pattern 230 may follow the curve of the substrate 50 to be polished. That is, the base 210 forms a thin portion near the trench 300, and based on this, the fluidity in the plane direction is increased by the pressure in the third direction (Z) applied to the pattern layer 200. You can have it. Therefore, vertical tracking along the curved surface of the substrate 50 to be polished can be made more flexible.

In terms of preventing the above-mentioned hydroplaning phenomenon, the area occupied by the trench 300, that is, the first trench 310 and the second trench 320 on the plane, is about 10% of the total area of the polishing pad 11, or About 12%, or about 14%, or about 16%, or about 18%, or about 20%, or about 22%, or about 24%, or about 26%, or about 28%, or about 30%, or It may be about 32%, or about 34%, or about 36%, or about 38%, or about 40%, or about 42%, or about 44%, or about 46%, or about 48%, or about 50%. there is. Also, in this specification, the ratio of the area occupied by the trench 300 includes the disclosure of a numerical range with any two of the above numerical values as upper and lower limits, respectively. For example, the ratio of the area occupied by the polishing pad 11 to the total area of the polishing pad 11 may be about 10% to 50%, or about 20% to 40%, or about 25% to 35%.

To this end, in some embodiments, the maximum depth of the trench 300, for example, the maximum depth of the first trench 310, may be greater than the height H of the protruding pattern 230. In an exemplary embodiment in which the trench 300 is formed in the pattern layer 200, the maximum depth of the first trench 310 is greater than the height of the protruding pattern 230, which affects the fluidity of the pattern layer 200 and the substrate to be polished. It can be advantageous in terms of tracking.

Additionally, the trench 300 may have a trench groove 310h (or fourth groove) recessed from the trench bottom surface 310b toward the base 210. The trench groove 310h may be formed together with the above-described first grooves 230h to third grooves 210h2 and the indented portion 230c. The depth D3 of the trench groove 310h may be substantially equal to the depth D1 of the first groove 230h to the depth D2 of the third groove 210h2. Other redundant explanations are omitted.

Hereinafter, the follow characteristics and polishing characteristics of the polishing pad 11 according to this embodiment will be described with further reference to FIGS. 8 to 11.

FIG. 8 is a schematic diagram showing a state in which the polishing pad of FIG. 2 is in contact with a substrate to be polished, and FIG. 9 is a schematic diagram compared to FIG. 8.

First, referring to FIG. 8, when the lower surface of the substrate 50 to be polished has a slight curve, the polishing pad 11 according to the present embodiment has a support layer 100 with sufficient flexibility to move in the vertical direction, for example, due to gravity. Elastic deformation in direction may be possible. Through this, the upper surface of the protruding pattern 230 forming the polishing surface can be in close contact with the curved surface of the substrate 50 to be polished, and the slurry is evenly distributed between the pattern layer 200 and the substrate 50 to be polished, providing excellent polishing. polishing rate can be achieved.

In addition, the portion where the substrate to be polished 50, which protrudes relatively convexly downward, contacts the polishing pad 11, is the portion where the substrate 50, which is to be polished, which is concave and recessed relatively upward, contacts the polishing pad 11. A relatively greater pressure can be applied compared to the part, thereby minimizing polishing non-uniformity (NU) and achieving uniform polishing.

In particular, the polishing pad 11 according to this embodiment forms the rigidity of the pattern layer 200 to be greater than the rigidity of the support layer 100, so that when the polishing pad 11 is pressed against the substrate 50 to be polished, the pattern layer 200 ) The degree of deformation of the support layer 100 may be greater than that of the protruding pattern 230 and the base 210. As a non-limiting example, the pattern layer 200 may not be substantially deformed or may be configured to cause only minimal deformation and only the support layer 100 may be flexibly deformed. If the protruding pattern 230 has excessive flexibility and is easily deformed by vertical pressure, the polishing area of the protruding pattern 230 is deformed and the intended polishing rate is not achieved due to shape deformation such as tilting in the horizontal direction. It may not be possible.

Therefore, the support layer 100, rather than the pattern layer 200, is deformed to follow the curvature of the surface of the substrate 50 to be polished, and at the same time, an excellent polishing rate can be achieved. The present invention is not limited thereto, but as a non-limiting example, the maximum rate of change in the planar direction with respect to the vertical pressure of the pattern layer 200 including the protruding pattern 230, or the material constituting the pattern layer 200 The material may be selected so that it is about 20.0% or less, or about 15.0% or less, or about 10.0% or less, or about 5.0% or less.

On the other hand, referring further to FIG. 9, in the case of the conventional polishing pad 11', even though the surface roughness is maintained by a conditioner (not shown), the polishing pad 11' exhibits uniform roughness over the entire surface. It is substantially difficult to polish the polishing surface, and as a result, it cannot come into close contact with the substrate 50 to be polished, which has a curved surface. This increases polishing unevenness and even causes scratches and defects.

FIG. 10 is another schematic diagram showing a state in which the polishing pad of FIG. 2 is in contact with a substrate to be polished, and FIG. 11 is a schematic diagram compared to FIG. 10.

10 and 11 illustrate a case where the substrate 50 to be polished includes a device pattern 50b disposed on a base substrate 50a and an overcoating layer 50c thereon. The device pattern 50b may be a wiring pattern made of metal, an active pattern containing a semiconductor material, etc., but is not particularly limited.

First, referring to FIG. 10, when an overcoating layer 50c having a very fine degree of curvature or step is located on the lower surface of the substrate 50 to be polished, the polishing pad 11 according to this embodiment is The top of the pattern layer 200 has a uniform height, and the overcoating layer 50c can be uniformly planarized. That is, only the overcoating layer 50c that protrudes convexly to the lower side is selectively polished, and physical pressure is minimized to the overcoating layer 50c that is relatively concavely recessed to the upper side, thereby preventing damage to the elements of the substrate 50 to be polished. Global planarization can be achieved without Therefore, the polishing pad 11 according to this embodiment can be applied to the STI structure process, etc. This will be described later along with an experimental example.

On the other hand, referring further to FIG. 11, in the case of the conventional polishing pad 11', it is substantially difficult to achieve uniform roughness over the entire surface, and in some cases, the overcoating layer 50c, which is relatively concave toward the upper side, must be polished. It can be done. Accordingly, damage may occur to the elements of the substrate 50 to be polished, or only partial planarization can be achieved, so it is not suitable for use in a precision planarization process.

Hereinafter, other embodiments of the present invention will be described. However, the description of the same or extremely similar configuration as the polishing pad 11 according to the above-described embodiment will be omitted, and this can be clearly understood by those skilled in the art from the accompanying drawings and detailed description. will be. Additionally, it goes without saying that a polishing device to which a polishing pad according to other embodiments is applied can be easily conceived.

Figure 12 is a plan view showing the arrangement of protruding patterns of a polishing pad according to another embodiment of the present invention. Figure 13 is a cross-sectional perspective view of the polishing pad of Figure 12, showing a position corresponding to Figure 5. FIG. 14 is a cross-sectional view of the polishing pad of FIG. 13, showing a position corresponding to FIG. 6A.

12 to 14, the protruding pattern 230 of the pattern layer 202 of the polishing pad 12 according to this embodiment has a first groove 230h and an indented portion 230c, and the base 210 ) has a second groove 210h1 and a third groove 210h2, but differs from the above-described embodiment in that the depth D1 of the first groove 230h is greater than the height of the protruding pattern 230. .

That is, the depth of the groove according to the above-described embodiment, such as that of FIG. 5, is smaller than the height of the protruding pattern 230. Accordingly, an indentation may be formed in the planar edge of the protruding pattern 230, and a stepped surface may be formed by the indentation.

On the other hand, the depth of the groove according to this embodiment is greater than the height of the protruding pattern 230, and accordingly, an indentation is formed at the edge of the planar surface of the protruding pattern 230, but the indentation does not form a step surface and completely removes the protruding pattern. can do.

Specifically, the first groove 230h may form a first groove base surface 230hb and a first groove inner wall 230hs. At this time, the height of the first groove base surface 230hb may be located lower than the height of the upper surface of the base 210, that is, the height of the reference surface 210t.

The planar edge of the protruding pattern 230 may be partially indented to form an indented portion 230c. The indentation portion 230c forms a vertical indentation inner wall 230cs, but the base surface of the indentation portion, that is, the step surface of the protruding pattern 230, may not be formed at a higher position than the reference surface 210t.

Additionally, the base 210 may have a second groove 210h1 and/or a third groove 210h2. The second groove 210h1 and the third groove 210h2 are both formed in the base 210 and are the same in that they form a closed curve shape on a plane, but can be referred to differently through several differences as follows.

The second groove 210h1 may be spaced apart from the protruding pattern 230 . On the other hand, the third groove 210h2 may be located adjacent to the protruding pattern 230. For example, from a plan view, the third groove 210h2 has a substantially circular shape, and an edge of the third groove 210h2 may coincide with an edge of the protruding pattern 230. The planar size of the second groove 210h1, the third groove 210h2, and the first groove 230h may be substantially the same or very similar.

The second groove 210h1 recessed inward from the upper surface of the base 210 may form a second groove base surface 210h1b and a second groove inner wall 210h1s. Additionally, the third groove 210h2 recessed inward from the upper surface of the base 210 may form a third groove base surface 210h2b and a third groove inner wall 210h2s. Additionally, the third groove 210h2 may have a stepped surface 210h2b2 therein. That is, the third groove 210h2 may have a third groove lowest base surface 210h2b1 and a third groove step surface 210h2b2.

The third groove step surface 210h2b2 may be located at a higher position than the third groove lowest base surface 210h2b1. The third groove step surface 210h2b2 may also be referred to as the base surface of the indented portion 230c.

At this time, the height position of the second groove base surface 210h1b and the height position of the third groove bottom surface 210h2b1 may be substantially the same or extremely similar. In other words, the distance from the other surface of the pattern layer 202 to the second groove base surface 210h1b may be within ±10% of the distance from the other surface to the third groove bottom surface 210h2b1. Additionally, the height position of the third groove step surface 210h2b2 may be lower than the height position of the reference surface 210t.

The maximum depth D2 of the third groove 210h2 may be defined as the distance from the reference surface 210t to the lowest base surface 210h2b1 of the third groove. At this time, the depth D2 of the second groove 210h1, the depth D2 of the third groove 210h2, and the depth D1 of the first groove 230h are about ±10% or about ±8% of each other. , or about ±6%, or about ±5%.

The third groove step surface 210h2b2 and the third groove lowest base surface 210h2b1 each have an arcuate shape when viewed from a plan view, and the third groove step surface 210h2b2 and the third groove lowest base surface 210h2b1 together have an approximately circular shape. can be formed.

The pattern layer 202 according to this embodiment has a means of solving the same technical problem as the above-described embodiment, but relates to a structure formed when the depth formed by a laser is greater than the height of the protruding pattern 230. Since the structure of the other pattern layers has been described above, redundant description will be omitted.

Figure 15 is a plan view showing the arrangement of protruding patterns of a polishing pad according to another embodiment of the present invention. Figure 16 is a cross-sectional perspective view of the polishing pad of Figure 15, showing a position corresponding to Figure 5. FIG. 17 is a cross-sectional view of the polishing pad of FIG. 16, showing a position corresponding to FIG. 6A.

15 to 17, the protruding pattern 230 of the pattern layer 203 of the polishing pad 13 according to this embodiment has a first groove 230h and an indented portion 230c, and the base 210 ) has a second groove 210h1 and a third groove 210h2, but is different from the above-described embodiment in that the depth D1 of the first groove 230h, etc. is substantially the same as the height of the protruding pattern 230. point.

That is, the depth of the groove according to the above-described embodiment, such as that of FIG. 13, is greater than the height of the protruding pattern 230. Accordingly, in the process of forming an indentation in the planar edge of the protruding pattern 230, the corresponding portion of the protruding pattern 230 may be completely removed, and a third groove having a stepped surface may be formed.

On the other hand, the depth of the groove according to the present embodiment is substantially the same as the height of the protruding pattern 230, and accordingly, an indentation is formed at the planar edge of the protruding pattern 230, and the upper surface of the base 210 is formed by the indentation. (210t) may be exposed.

Specifically, the first groove 230h may form a first groove base surface 230hb and a first groove inner wall 230hs. At this time, the height of the first groove base surface 230hb may be substantially the same as the height of the upper surface of the base 210, that is, the height of the reference surface 210t.

The planar edge of the protruding pattern 230 may be partially indented to form an indented portion 230c. The indentation portion 230c forms a vertical indentation inner wall 230cs, and the bottom surface of the indentation portion may be formed at the same position as the upper surface 210t of the base 210.

Additionally, the base 210 may have a second groove 210h1 and/or a third groove 210h2. The second groove 210h1 and the third groove 210h2 are both formed in the base 210 and are the same in that they form a closed curve shape on a plane, but can be referred to differently through several differences as follows.

First, both the second groove 210h1 and the third groove 210h2 may be at least partially spaced apart from the protruding pattern 230 . From a plan view, the third groove 210h2 may have a substantially arcuate shape. At this time, from a plan view, the base 210 may be at least partially exposed between the third groove 210h2 and the protruding pattern 230.

The third groove 210h2 may have a smaller plan size than the second groove 210h1 and the first groove 230h. On the other hand, the planar area size of the second groove 210h1 may be within the range of about ±10%, or about ±8%, or about ±6%, or about ±5% of the planar area size of the first groove (230h). You can.

The second groove 210h1 recessed inward from the upper surface of the base 210 may form a second groove base surface 210h1b and a second groove inner wall 210h1s. Additionally, the third groove 210h2 recessed inward from the upper surface of the base 210 may form a third groove base surface 210h2b and a third groove inner wall 210h2s.

The height position of the second groove base surface 210h1b and the height position of the third groove base surface 210h2b may be substantially the same or may be extremely similar. In addition, the height position of the second groove base surface 210h1b and/or the third groove base surface 210h2b may be lower than the height position of the first groove base surface 230hb and the height position of the reference surface 210t. This may be because the second groove 210h1 and the third groove 210h2 are depressed from the upper surface of the base 210.

In addition, the depth D2 of the second groove 210h1 and/or the depth of the third groove 210h2 is about ±10%, or about ±8%, of the depth D1 of the above-described first groove 230h, Or it may be within a range of about ±6%, or about ±5%. The second groove inner wall 210h1s and/or the third groove inner wall 210h2s may include a portion that is at least partially vertical when viewed in cross section.

The pattern layer 203 according to the present embodiment has a means of solving the same technical problem as the above-described embodiments, but relates to a structure formed when the depth formed by the laser is approximately similar to the height of the protruding pattern 230. will be. Since the structure of the other pattern layers has been described above, redundant description will be omitted.

Figure 18 is a plan view showing the arrangement of protruding patterns of a polishing pad according to another embodiment of the present invention.

Referring to FIG. 18, the pattern layer 204 of the polishing pad 14 according to the present embodiment has first grooves 230h to third grooves 210h2 and indentations 230c, and their planar shapes What is different from the above-described embodiments is that the discolored portion 240 is located on the outer edge.

Additionally, the first grooves 230h to 3 grooves 210h2 and the indented portion 230c according to this embodiment may not have a perfect circular shape on a plane, but may have a substantially distorted circular shape or an arbitrary shape. The present invention is not limited to this, but as will be described later, when forming the first grooves 230h to third grooves 210h2 and the indentation 230c using a laser, the pattern layer 204 is formed by laser irradiation. The material making up may be partially discolored and the discolored portion 240 may remain. In other words, the discolored portion 240 may refer to a portion of the pattern layer 204 other than the first to third grooves 230h to 210h2 and the indented portion 230c.

In an exemplary embodiment, the color of the discolored portion 240 may have lower saturation and/or brightness than the color of other portions, such as other portions of the protruding pattern 230 or other portions of the base 210. . Here, saturation and brightness may be based on HSV coordinates.

In the polishing pads of the above-described and later-described embodiments, although not shown in the drawings, it is of course possible to include a discoloration portion as in this embodiment.

Figure 19 is a plan view showing the arrangement of protruding patterns of a polishing pad according to another embodiment of the present invention.

Referring to FIG. 19, the pattern layer 205 of the polishing pad 15 according to this embodiment includes a plurality of protruding patterns 230, but the protruding patterns 230 do not have a substantially square shape when viewed from a plan view, but are approximately The difference from the polishing pad according to the above-described embodiments is that it has a '+' shape.

As described above, the protruding pattern 230 may be repeatedly arranged along at least two directions to form a substantially regular arrangement. For example, the protruding patterns 230 may be repeatedly arranged with substantially the same spacing along the first direction (X) and the second direction (Y).

Any one protrusion pattern 230 may include an extension portion extending from an arbitrary point. Figure 19 illustrates a case where it extends in four directions and has a roughly '+' shape. However, the present invention is not limited to this, and there may be three extension parts. Additionally, at least some of the plurality of extension parts may be parallel to the arrangement direction of the protruding patterns 230, that is, the first direction (X) and the second direction (Y), but the present invention is not limited thereto.

In this embodiment, the minimum width (Wmin) of the protruding pattern 230 may be expressed as the width of any one extension. On the other hand, the maximum width (Wmax) of the protruding pattern 230 can be expressed as the distance between the ends of two extension parts extending in opposite directions.

As described above, the polishing rate and polishing unevenness may be affected depending on the polishing area and circumferential length of the protruding pattern 230. The protruding pattern 230 according to this embodiment has a substantially cross shape in plan, and thus has a similar peripheral length to that of FIG. 3 described above, but can form a smaller polishing area. In this way, by using the planar shape of the protruding pattern 230, the peripheral length and/or polishing area can be controlled and design freedom can be secured.

Additionally, when a protruding pattern 230 has a plurality of extensions as in the present embodiment, two extensions adjacent to each other may form a three-dimensional space such as an 'ㄱ' or 'ㄴ' shape. The space may function as an indentation that traps slurry flowing around the protruding pattern 230. Through this, a structure in which the trapped slurry flows in the opposite direction along the upper surface of the protruding pattern 230 can be formed. That is, the slurry can be trapped and/or controlled not only by the upper surface of the base 210 but also by the indentation of the protruding pattern 230 and forced to flow to the upper surface of the protruding pattern 230, thereby increasing the slurry utilization efficiency. You can.

Meanwhile, the pattern layer 205 of the polishing pad 15 may have a first groove 230h, a second groove 210h1, a third groove 210h2, and/or an indentation 230c. The first grooves 230h to 3 grooves 210h2 and the recessed portion 230c may be configured as shown in any one of FIGS. 5, 13, or 16 described above, and thus duplicate descriptions will be omitted.

Figure 20 is a plan view showing the arrangement of protruding patterns of a polishing pad according to another embodiment of the present invention.

Referring to FIG. 20, the protruding pattern 230 of the pattern layer 206 of the polishing pad 16 according to this embodiment has a substantially pivoted '+' shape, that is, an 'X' shape from a plan view point. This is different from the polishing pad according to the embodiment of FIG. 19.

That is, the protruding pattern 230 has an extension portion extending from an arbitrary point, but the extending direction of the extending portion may be different from the arranging direction of the protruding pattern 230.

As in the present embodiment, when the protruding pattern 230 is pivoted on a plane and the extension direction of the extension portion and the arrangement direction of the protruding patterns 230 are different, an indented three-dimensional space having a shape such as an 'L' shape is formed into a protruding pattern ( 230) can be arranged along the arrangement direction. That is, the indented three-dimensional space may be located on one side and the other side of the protrusion pattern 230 in the first direction (X) and on one side and the other side of the second direction (Y). Accordingly, the centrifugal force generated by the rotation of the polishing pad 16 can be more efficiently used to trap the slurry.

Meanwhile, the pattern layer 206 of the polishing pad 16 may have a first groove 230h, a second groove 210h1, a third groove 210h2, and/or an indentation 230c. The first grooves 230h to 3 grooves 210h2 and the recessed portion 230c may be configured as shown in any one of FIGS. 5, 13, or 16 described above, and thus duplicate descriptions will be omitted.

Figure 21 is a plan view showing the arrangement of protruding patterns of a polishing pad according to another embodiment of the present invention.

Referring to FIG. 21, the pattern layer 207 of the polishing pad 17 according to this embodiment has a plurality of protruding patterns 230 together to form a cluster pattern, and the cluster pattern is approximately regular in the first direction (X ) and the points arranged in the second direction (Y) are different from the polishing pad according to the embodiment of FIG. 20. Even in the case of this embodiment, the terms maximum width and minimum width used in this specification must be defined based on one of the protruding patterns 230.

In an exemplary embodiment, one of the protruding patterns 230 may have a substantially square shape as shown in FIG. 3, but the present invention is not limited thereto. FIG. 21 illustrates a case where four protruding patterns 230 are arranged near each corner of one protruding pattern 230, and a total of five protruding patterns 230 form one cluster pattern. Accordingly, the cluster pattern may have an approximately 'X' shape on a plane. The plurality of protruding patterns 230 forming one cluster pattern may partially contact each other or may be spaced apart.

The pattern layer 207 according to the present embodiment may be adopted to form a protruding pattern of approximately the same shape as that of FIG. 20, while having a roughly similar planar polishing area and further increasing the circumferential length.

Meanwhile, the pattern layer 207 of the polishing pad 17 may have a first groove 230h, a second groove 210h1, a third groove 210h2, and/or an indentation 230c. The first grooves 230h to 3 grooves 210h2 and the recessed portion 230c may be configured as shown in any one of FIGS. 5, 13, or 16 described above, and thus duplicate descriptions will be omitted.

Figure 22 is a plan view showing the arrangement of protruding patterns of a polishing pad according to another embodiment of the present invention.

Referring to FIG. 22, the pattern layer 208 of the polishing pad 18 according to the present embodiment has a plurality of protruding patterns 230 together forming a cluster pattern, and each cluster pattern has a different shape. It is different from the polishing pad according to the embodiment of FIG. 21 in that it includes the first protruding pattern 230a and the second protruding pattern 230b.

FIG. 22 illustrates a case where four second protrusion patterns 230b are arranged based on one first protrusion pattern 230a, so that a total of five protrusion patterns form one cluster pattern. The first protruding pattern 230a and the second protruding pattern 230b may contact each other.

At this time, when the minimum width of the second protrusion pattern 230b is smaller than the minimum width of the first protrusion pattern 230a, the minimum width of the protrusion pattern may mean the minimum width of the second protrusion pattern 230b. .

The pattern layer 208 according to this embodiment may be adopted to form a protruding pattern of approximately the same shape as that of FIG. 21, while having approximately a similar circumferential length and reducing the polishing area.

Meanwhile, the pattern layer 208 of the polishing pad 18 may have a first groove 230h, a second groove 210h1, a third groove 210h2, and/or an indentation 230c. The first grooves 230h to 3 grooves 210h2 and the recessed portion 230c may be configured as shown in any one of FIGS. 5, 13, or 16 described above, and thus duplicate descriptions will be omitted.

Figure 23 is a plan view showing the arrangement of protruding patterns of a polishing pad according to another embodiment of the present invention.

Referring to FIG. 23, the pattern layer 209 of the polishing pad 19 according to this embodiment differs from the polishing pad according to the embodiment of FIG. 22 in that the protruding patterns 230 within a cluster pattern are spaced apart from each other. .

That is, some of the protruding patterns 230 may have an approximately '+' shape, and other parts may have an approximately 'X' shape. Accordingly, the protruding patterns 230 may be spaced apart from each other. The separation space may provide a path for large particles or impurities in the slurry to pass through. In other words, particles that cause damage to the substrate to be polished can be configured to pass through the space instead of flowing to the upper surface of the protruding pattern 230, thereby further improving the polishing characteristics.

Meanwhile, the pattern layer 209 of the polishing pad 19 may have a first groove 230h, a second groove 210h1, a third groove 210h2, and/or an indentation 230c. The first grooves 230h to 3 grooves 210h2 and the recessed portion 230c may be configured as shown in any one of FIGS. 5, 13, or 16 described above, and thus duplicate descriptions will be omitted.

Figure 24 is a plan view showing the arrangement of protruding patterns of a polishing pad according to another embodiment of the present invention.

Referring to FIG. 24, the pattern layer 209' of the polishing pad 20 according to this embodiment includes a plurality of regularly arranged cluster patterns, and any one cluster pattern has a plurality of protruding patterns 230. Including, the point where the arrangement direction of the plurality of cluster patterns and the direction in which the protruding patterns 230 are arranged within one cluster pattern intersect the first direction (X) and the second direction (Y) is shown in the embodiment of FIG. 23. This is different from the polishing pad according to the example.

In an exemplary embodiment, one cluster pattern may include or include 10 protruding patterns 230 having the same or different shapes. At this time, the arrangement direction of the cluster pattern and the arrangement direction of the protruding pattern 230 may form an acute angle of less than about 45 degrees, or less than about 40 degrees, or less than about 30 degrees, or less than about 20 degrees.

That is, compared to the case where the arrangement direction of the cluster pattern and the arrangement direction of the protruding patterns 230 are parallel, orthogonal, or form an angle of about 45 degrees as in the above-described embodiment, according to this embodiment, the protruding pattern 230 ) can further increase the array density.

Hereinafter, a method for manufacturing a polishing pad according to the present invention will be described.

Figures 25 and 26 are cross-sectional views showing a method of manufacturing a polishing pad according to an embodiment of the present invention.

First, referring to FIG. 25, a support layer 100 and a free pattern layer (210p, 230p) are prepared. The pattern layers 210p and 230p may include a free base 210p and a free protrusion pattern 230p. The terms 'free base' and 'free protrusion pattern' used in this embodiment are used to distinguish the base and protrusion pattern from the base and protrusion pattern in which grooves and/or curves are formed by laser irradiation, as will be described later. Since the material, arrangement, and structure have been described above, redundant description will be omitted.

Next, referring further to FIG. 26, a laser L is irradiated to the free pattern layer to form a base 210 with vertical holes and a protruding pattern 230. As described above, the protruding pattern 230 may have a first groove 230h and a recessed portion 230c, and the base 210 may have a second groove 210h1 and a third groove 210h2.

The laser L may be repeatedly irradiated while moving its position at a predetermined distance. Here, by the above-mentioned separation distance of the laser L, the first grooves 230h to third grooves 210h2 and the indentation portion 230c can be formed approximately regularly on the plane. Accordingly, the separation distance between the first grooves 230h to third grooves 210h2 and the indented portion 230c may be defined.

In an exemplary embodiment, the laser L may be irradiated at least partially to the protruding pattern 230 to form a first groove 230h recessed from the upper surface of the protruding pattern 230 .

In addition, the laser L may be irradiated at least partially to the protruding pattern 230 and may be irradiated to a planar edge of the protruding pattern 230 to form the indented portion 230c. At this time, if the irradiation depth of the laser L is smaller than the height of the protruding pattern 230, the portion irradiated by the laser may not be completely removed and a step located above the reference surface 210t may be formed.

At the same time, the laser L irradiated near the edge of the protruding pattern 230 may be irradiated to the base 210 to form a third groove 210h2.

Additionally, the laser L may not be irradiated at least partially to the protruding pattern 230, but may be irradiated to the upper surface of the base 210 to form a second groove 210h1 recessed from the upper surface of the base 210.

In some embodiments, the laser L may be irradiated at least partially to the bottom surface of the trench to form the trench groove 310h. However, the present invention is not limited to this, and the trench may be formed only after the first to third grooves 230h to 210h2 and the indented portion 230c are formed by a laser. In this case, the trench groove may not exist.

At this time, the maximum depths of the above-described first groove 230h, second groove 210h1, and third groove 210h2 may be substantially the same. This may be due to the light irradiation conditions and type of the laser.

The method of manufacturing a polishing pad according to this embodiment can first determine the contact pressure required for polishing and the planar shape and length elements of the protruding pattern. And considering the contact pressure, the polishing area of the protruding pattern, that is, the top area, can be determined. Then, considering the determined contact pressure and polishing area, the perimeter length per unit area of the protrusion pattern can be determined. Also, considering the determined contact pressure, polishing area, and perimeter length per unit area, the size of the grooves and/or indentations to be formed in the protrusion pattern, the arrangement density of the grooves and indentations, etc. can be determined.

In this case, as described above, it is very limited and not easy to simultaneously control the factors that affect the polishing rate, that is, the ratio of the polished area of the protruding pattern and the perimeter length per unit area. In particular, there is a limit to increasing the perimeter length when the required polishing area is determined. If you try to increase the perimeter length only by changing the pattern shape, it may cause a reduction in the polishing area, or at least increase the manufacturing cost due to a reduction in the minimum width of the pattern.

However, according to the present embodiments, laser irradiation is irradiated regularly or randomly to the free pattern to form grooves and/or indentations, and this is used to substantially maintain the polishing area or minimize the degree of reduction while minimizing the peripheral length per unit area. The increase can be achieved relatively easily. When controlling the elements of the groove or indentation as described above, the peripheral length of the protruding pattern according to the present embodiment is about 1.5 to 3.5 times, or about 2.0 to 3.0 times, compared to the protruding pattern without the groove or indentation, Or it may be increased by about 2.2 to 2.7 times.

The polishing pad manufactured by the polishing pad manufacturing method according to this embodiment may have a cross-sectional structure as shown in FIG. 6A, but the present invention is not limited thereto.

Figure 27 is a cross-sectional view showing a method of manufacturing a polishing pad according to another embodiment of the present invention.

Referring to FIG. 27, the method of manufacturing a polishing pad according to this embodiment forms a base 210 with vertical holes and a protruding pattern 230 by irradiating a laser L on a free pattern layer. As described above, the protruding pattern 230 may have a first groove 230h and a recessed portion 230c, and the base 210 may have a second groove 210h1 and a third groove 210h2.

In an exemplary embodiment, the laser L may be irradiated at least partially to the protruding pattern 230 to form a first groove 230h recessed from the upper surface of the protruding pattern 230 .

Additionally, the laser L may be irradiated at least partially to the protruding pattern 230 and may be irradiated to a planar edge of the protruding pattern 230 to form a third groove 210h2. At this time, if the irradiation depth of the laser L is greater than the height of the protruding pattern 230, the portion of the protruding pattern 230 irradiated with the laser may be completely removed. Furthermore, a third groove step surface 210h2b2 may be formed within the third groove 210h2. In other words, among the laser L irradiated near the edge of the protrusion pattern 230, the portion irradiated by overlapping with the first free protrusion pattern forms a third groove step surface 210h2b2 and does not overlap with the first free protrusion pattern. The irradiated portion may form the third groove lowest basal surface 210h2b1.

Additionally, the laser L may not be irradiated at least partially to the protruding pattern 230, but may be irradiated to the upper surface of the base 210 to form a second groove 210h1 recessed from the upper surface of the base 210.

The polishing pad manufactured by the polishing pad manufacturing method according to this embodiment may have a cross-sectional structure as shown in FIG. 14, but the present invention is not limited thereto.

Figure 28 is a cross-sectional view showing a method of manufacturing a polishing pad according to another embodiment of the present invention.

Referring to FIG. 28, in the method of manufacturing a polishing pad according to this embodiment, a base 210 with vertical holes and a protruding pattern 230 are formed by irradiating a laser L on a free pattern layer. As described above, the protruding pattern 230 may have a first groove 230h and a recessed portion 230c, and the base 210 may have a second groove 210h1 and a third groove 210h2.

In an exemplary embodiment, the laser L may be irradiated at least partially to the protruding pattern 230 to form a first groove 230h recessed from the upper surface of the protruding pattern 230 .

In addition, the laser L may be irradiated at least partially to the protruding pattern 230 and may be irradiated to a planar edge of the protruding pattern 230 to form the indented portion 230c. At this time, if the irradiation depth of the laser (L) is substantially the same or extremely similar to the height of the protruding pattern 230, the portion of the protruding pattern 230 irradiated with the laser is completely removed to expose the upper surface of the base 210. can do.

At the same time, the laser L irradiated near the edge of the protruding pattern 230 may be irradiated to the base 210 to form a third groove 210h2.

Additionally, the laser L may not be irradiated at least partially to the protruding pattern 230, but may be irradiated to the upper surface of the base 210 to form a second groove 210h1 recessed from the upper surface of the base 210.

The polishing pad manufactured by the polishing pad manufacturing method according to this embodiment may have a cross-sectional structure as shown in FIG. 17, but the present invention is not limited thereto.

Although the description has been made above with a focus on embodiments of the present invention, this is merely an example and does not limit the present invention, and those skilled in the art will be able to understand the present invention without departing from the essential characteristics of the embodiments of the present invention. It will be apparent that various modifications and applications not exemplified above are possible.

Therefore, the scope of the present invention should be understood to include changes, equivalents, or substitutes of the technical ideas exemplified above. For example, each component specifically shown in the embodiments of the present invention can be modified and implemented. And these variations and differences in application should be construed as being included in the scope of the present invention as defined in the appended claims.

1: Polishing device
10: Polishing platen
11: polishing pad
40: carrier
50: substrate to be polished
60: nozzle
70: slurry
100: Support base
200: Pattern layer
300: trench

Claims (21)

support group; And a pattern layer disposed on the support layer and including a plurality of protruding patterns,
The protruding pattern has a first groove and a planar indentation,
From a plan view, the first groove is located in an area surrounded by an edge of the protruding pattern, and the planar shape of the first groove forms a closed loop. According to paragraph 1,
In cross-section, the first groove has an at least partially vertical inner wall. According to paragraph 1,
The pattern layer includes a base forming a reference surface, and the protruding pattern disposed on the base,
The indentation is a curved indentation,
A polishing pad wherein the protruding pattern has a step formed by a base surface of the indentation portion. According to paragraph 3,
In cross-section, the curved indentation has an at least partially vertical inner wall. According to paragraph 3,
The base is a polishing pad having a second groove having a closed loop shape in plan. According to clause 5,
A polishing pad wherein the planar area of the first groove is within ±10% of the planar area of the second groove. According to paragraph 1,
The pattern layer includes a base forming a reference surface, and the protruding pattern disposed on the base,
The base is,
A second groove having a closed loop shape in plan and spaced apart from the protruding pattern, and
A polishing pad having a closed loop shape in plan and a third groove adjacent to the protruding pattern. According to paragraph 1,
The pattern layer includes a base forming a reference surface, and the protruding pattern disposed on the base,
The base is,
A second groove having a closed loop shape in plan and spaced apart from the protruding pattern, and
A polishing pad having a closed loop shape in plan and a third groove having a stepped surface therein. According to clause 8,
The polishing pad wherein the distance from the other surface of the pattern layer to the lowest basal surface of the third groove is within ±10% of the distance from the other surface of the pattern layer to the lowest basal surface of the second groove. According to clause 8,
A polishing pad wherein the maximum depth of the first groove is within ±10% of the maximum depth of the second groove. According to paragraph 1,
The pattern layer includes a base forming a reference surface, and the protruding pattern disposed on the base,
The base is,
A second groove having a closed loop shape in plan and spaced apart from the protruding pattern, and
A polishing pad having a closed loop shape in plan and a third groove having a smaller plan size than the second groove. According to paragraph 1,
The width of the indentation having the maximum width among the one or more indentations of the protruding pattern is within a range of ±10% of the width of the first groove. According to paragraph 1,
A polishing pad wherein the maximum width of the first groove is 40% to 100% of the minimum width of the protruding pattern. According to paragraph 1,
A polishing pad wherein the minimum separation distance between an indentation of the protruding pattern and another indentation is smaller than the minimum separation distance between a protrusion pattern and another protrusion pattern. According to paragraph 1,
From a plan view, the portion surrounding the first groove has a low saturation or low brightness in HSV coordinates compared to the other portions of the index polishing pad. According to paragraph 1,
A polishing pad wherein the surface skewness formed by the bottom surface of the first groove is greater than the surface skewness of the top surface of the protruding pattern. According to paragraph 1,
The pattern layer further includes one or more trenches formed in a concentric circular shape or radially, wherein the ratio of the area occupied by the trench to the total area of the polishing pad is in the range of 10% to 50%. support group; and a pattern layer disposed on the support layer, including a base and a plurality of protruding patterns disposed on the base,
The plurality of protruding patterns include a first protruding pattern and a second protruding pattern spaced apart from each other, a first protruding pattern having a first groove recessed from the upper surface, and a second protruding pattern having an indented portion on a plane with an indented edge. However,
The distance from the other surface of the pattern layer to the base surface of the first groove is within ±10% of the distance from the other surface of the pattern layer to the base surface of the indentation, or
The maximum depth of the first groove is within ±10% of the maximum depth of the second groove formed in the base. support group; and a pattern layer disposed on the support layer, including a base and a plurality of protruding patterns disposed on the base,
The protruding pattern has a first groove having an at least partially vertical inner wall,
The base has a second groove having an inner wall that is at least partially vertical in cross-section. A polishing device comprising a polishing pad according to any one of claims 1 to 19. forming a pattern layer including a protruding pattern; and
Including irradiating a laser to the pattern layer,
In the step of irradiating the laser, the laser is irradiated at least partially to the protruding pattern to form a first groove on the upper surface of the protruding pattern or a planar indentation at the edge of the protruding pattern. .