KR20220009888A - Chemical-mechanical polishing pad including protruding pattern with increased circumference length and method for preparing the same - Google Patents

Abstract

Provided are a chemical-mechanical polishing pad that includes a protruding pattern having porosity to improve a polishing rate and reduce manufacturing cost, and a manufacturing method using a pattern mold. According to the present invention, the polishing pad comprises: a support layer; and a pattern layer disposed on one surface of the support layer, and including a base and a plurality of protruding patterns disposed on the base. The base has a plurality of pores exposed on an upper surface, and the average diameter of the pores is in the range of 80 μm to 150 μm.

Description

CHEMICAL-MECHANICAL POLISHING PAD INCLUDING PROTRUDING PATTERN WITH INCREASED CIRCUMFERENCE LENGTH AND METHOD FOR PREPARING THE SAME

The present invention relates to a polishing pad including a protruding pattern formed on a polishing surface and a method for manufacturing the same. Specifically, it relates to a manufacturing method using a chemical-mechanical polishing pad and a pattern mold capable of reducing manufacturing cost while improving a polishing rate by including a protruding pattern having porosity.

In general, a chemical-mechanical polishing (CMP) process is used to manufacture high-integration circuit devices such as semiconductors and displays. In the chemical-mechanical polishing process, a polishing target substrate, for example, a wafer substrate, is brought into pressure contact with a rotating polishing pad, and polishing is performed using a chemical reaction with a slurry at the same time. The chemical-mechanical polishing process mainly aims to planarize the surface to be polished or to remove unnecessary layers.

The characteristics of the polishing process may be expressed in terms of a removal rate (RR), non-uniformity (NU), scratch of the polishing object, and planarization of the polishing object. Among them, the polishing rate is one of the most important characteristics of the polishing process, and the main factors are the polishing surface morphology (topography) of the polishing pad, the slurry composition, and the temperature of the polishing platen.

A conventional polishing apparatus is configured to include a conditioner to maintain the surface of the polishing pad, that is, the polishing surface characteristics. The conditioner may be positioned eccentrically with respect to the axis of rotation of the polishing pad, and the conditioner may be configured to be in contact with the polishing surface of the polishing pad. Cutting particles made of diamond or the like are disposed on a surface of the conditioner in contact with the polishing pad, and an uneven structure may be formed or maintained on the surface of the polishing pad by the cutting particles. That is, in the course of the polishing process, the conditioner continuously polishes the polishing surface of the polishing pad to maintain the surface roughness of the polishing pad at a certain level or more, and the polishing apparatus including the polishing pad has an approximately constant polishing rate. can be made to indicate

However, as the polishing process is performed, the polishing pad is continuously worn, and the uneven structure of the surface and the uneven surface roughness may occur. If the surface roughness is too small, there is a problem in that the actual contact area actually in contact with the substrate to be polished increases or the flow of the polishing liquid slurry becomes difficult. On the other hand, if the surface roughness is excessively large, the required flatness may not be satisfied due to non-uniform contact with the polishing target substrate, and scratches may occur on the polishing target. The unevenness of the polishing surface is a factor that shortens the life and durability of the polishing pad.

In particular, as pattern substrates such as semiconductors are highly integrated, the above problems may be exacerbated. For example, in order to form a shallow trench isolation (STI) structure for high integration of semiconductors, a degree of planarization at the level of global planarization is required, and the polishing process may directly affect semiconductor properties.

However, in the case of a conventional polishing pad, there is a problem in that it is vulnerable to defects such as dishing and erosion due to durability problems. can cause Therefore, there is an urgent need for the development of a polishing pad applicable to a case requiring a high level of planarity, such as a shallow trench isolation process.

Accordingly, an object of the present invention is to provide a polishing pad capable of exhibiting a stable morphology or topography of a polishing surface despite the continued polishing process. Another object of the present invention is to provide a polishing pad that has excellent polishing rate and uniformity, and can improve the use efficiency of the polishing liquid slurry.

Further, it is an object to provide a polishing pad capable of controlling the polishing rate according to a polishing object from a factor newly discovered as being capable of affecting the polishing rate.

At the same time, it is to provide a polishing pad that can be manufactured at a lower cost in spite of the improved polishing properties as described above.

Another object to be solved by the present invention is to provide a method capable of manufacturing a polishing pad including a porous protruding pattern having porosity in a more convenient way.

The problems of the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

A polishing pad according to an embodiment of the present invention for solving the above problems includes a support layer; and a pattern layer disposed on one surface of the support layer, the pattern layer including a base and a plurality of protruding patterns disposed on the base, wherein the base has a plurality of pores exposed on the upper surface, and a predetermined base With respect to the inspection area, the ratio of the area occupied by the pores of the base is 10% to 40%.

The support layer may have a plurality of pores exposed on one surface, and the base may be at least partially filled in the pores of the support layer.

The support layer has a porosity, the porosity of the support layer may be greater than the porosity of the pattern layer.

In addition, the base may have a trench, and an inner wall and a base surface of the trench may each have exposed pores.

For a predetermined inspection area, the surface skewness of the base surface of the trench of the base may be greater than the surface skewness of the upper surface of the base.

In addition, the base has a first trench at least partially exposing the one surface of the support layer, with respect to a predetermined inspection area, the surface skewness of the exposed surface of the support layer is the inner wall of the first trench It can be greater than the surface skewness.

The support layer may have a second trench connected to the trench of the base, and a surface roughness of an inner wall of the first trench may be smaller than a surface roughness of an inner wall of the second trench.

The upper surface of the protruding pattern may have pores contributing to an increase in the circumferential length on a plane, and the circumferential length of the polishing surface formed by the protruding pattern may be in the range of ^{8.0 mm/mm 2} to 24.0 mm/mm ^{2 .}

A polishing pad according to another embodiment of the present invention for solving the above problems includes a support layer; and a pattern layer disposed directly on the support layer, the pattern layer including a protrusion pattern having a plurality of pores, wherein the pores contribute to an increase in a perimeter length in a plane of the protrusion pattern, and the protrusion pattern per unit area The peripheral length of the polishing surface to be formed is in the range of ^{1.0 mm/mm 2} to 50.0 mm/mm ^{2 .}

The rigidity of the pattern layer may be greater than that of the support layer.

In a plan view, a ratio of the area occupied by the pores to the total area of the upper surface of any one protrusion pattern may be 10% to 50%.

In addition, the peripheral length of any one of the protruding patterns may be 4 to 50 times the minimum width of the any of the protruding patterns.

The circumferential length of the polishing surface formed by the protruding pattern per unit area may be in the range of 0.1 to 1.0 times the reciprocal of the minimum width of a certain protruding pattern.

The circumferential length of any protrusion pattern may be 1.5 to 3.5 times greater than the circumferential length when the first pores do not exist.

The minimum width of the protrusion pattern may be 20 μm or more, and the average diameter of the pores may be in the range of 10 μm to 150 μm.

In a planar view, the area occupied by the pores per unit area may be 0.5% to 20%.

In a plan view, the actual polishing area of the protruding pattern may be 5% to 30% per unit area.

In addition, the pores may include third pores positioned on the side surface of the protrusion pattern to form a side groove of the protrusion pattern, contribute to an increase in the side area, and affect the flow of the slurry during the polishing process.

The average diameter of the third pores may be in the range of 20㎛ to 150㎛.

The porosity of the support layer may be different from the porosity of the pattern layer.

A method of manufacturing a polishing pad according to an embodiment of the present invention for solving the above another problem is a step of forming a pattern layer disposed on a support layer, the pattern layer including a plurality of protruding patterns spaced apart from each other to form a pattern layer Including the step, with respect to the predetermined base inspection area, the ratio of the area occupied by the pores of the base is 10% to 40%.

The forming of the pattern layer may include filling the concave pattern of the pattern mold with a curable composition, and curing the curable composition in the concave pattern to form a porous protruding pattern.

At this time, the step of filling and curing the curable composition may be performed under a relative humidity of 40% to 70%.

In addition, the support layer may have pores exposed on the surface, and the curable composition may at least partially fill the pores of the support layer.

The porosity of the support layer may be greater than the porosity of the porous protrusion pattern.

A method of manufacturing a polishing pad according to another embodiment of the present invention for solving the above other problems includes: determining a contact pressure required for polishing and a planar shape and length element of a protruding pattern; determining a polishing area of the protruding pattern in contact with the polishing target substrate in consideration of the contact pressure; determining a circumferential length per unit area of the protrusion pattern in consideration of the contact pressure and the determined polishing area; and manufacturing a pattern layer including the protruding pattern.

The pattern layer may include a protruding pattern having a plurality of pores, and the pores may contribute to an increase in a perimeter of the protruding pattern. The pores can contribute to an increase in the circumferential length of the protruding pattern, and also serve to reduce the grinding area, so that the real contact pressure can be improved under the same grinding load.

In addition, in the step of manufacturing the pattern layer, the length element of the manufactured protrusion pattern may be greater than the determined length element.

Before the step of manufacturing the pattern layer, the step of determining the size of the pores contained in the protrusion pattern may be further included.

A polishing apparatus according to an embodiment of the present invention for solving the another problem is a polishing platen configured to rotate; and a polishing pad disposed on the polishing platen.

Details of other embodiments are included in the detailed description.

According to embodiments of the present invention, it is possible to stably maintain the surface roughness or topography of the polished surface despite the continuous polishing process, and to improve the polishing rate and polishing uniformity. In addition, even if the surface of the object to be polished has a fine curve, it is possible to follow the curve in the vertical direction along the curve of the surface of the object, thereby improving the polishing rate and polishing uniformity.

In addition, the polishing rate can be controlled from factors such as the pattern structure of the polishing pad surface, the length of the pattern, and the contact surface of the pattern, and the use of the slurry through the shape and arrangement of the unique protruding pattern according to the embodiments of the present invention can improve efficiency

Moreover, as described above, while elements such as the structure, length and/or contact area of the protruding pattern are configured to satisfy within a predetermined range, the protruding pattern has a pore size of a specified size so that the portion where the pores are located is the perimeter of the protruding pattern may contribute to the increase. Accordingly, it is possible to achieve simplification of process equipment for forming the protruding pattern, and contribute to reduction in manufacturing cost of the polishing pad and the polishing apparatus.

Effects according to the embodiments of the present invention are not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a perspective view of a polishing apparatus according to an embodiment of the present invention.
FIG. 2 is a plan layout of the polishing pad of FIG. 1 ;
3 is an enlarged perspective view showing an enlarged portion A of FIG. 2 .
4 is a plan view illustrating an arrangement of the protrusion pattern of FIG. 2 .
FIG. 5 is an enlarged perspective view showing an enlarged protrusion pattern of FIG. 2 .
6 is a cross-sectional view taken along line BB′ of FIG. 3 .
7 is a schematic diagram illustrating a state in which the polishing pad of FIG. 2 is in contact with a polishing target substrate, and FIG. 8 is a schematic diagram compared with FIG. 7 .
9 is another schematic diagram illustrating a state in which the polishing pad of FIG. 2 is in contact with a polishing target substrate, and FIG. 10 is a schematic diagram compared with FIG. 9 .
11 is a planar layout of a polishing pad according to another embodiment of the present invention.
12 is an enlarged perspective view showing an enlarged portion A of FIG. 11 .
13 is a cross-sectional view taken along line BB′ of FIG. 12 .
14 to 16 are cross-sectional views of a polishing pad according to still other embodiments of the present invention, respectively.
17 is a schematic diagram illustrating a method of manufacturing a polishing pad according to an embodiment of the present invention.
18 is a schematic diagram illustrating a method of manufacturing a polishing pad according to another embodiment of the present invention.
19 is a schematic cross-sectional view of the manufactured polishing pad.
20 is a schematic diagram illustrating a process of forming a trench in the polishing pad of FIG. 19 .
21 is an image showing the results according to Experimental Example 1.
22 and 23 are images showing results according to Experimental Example 2.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only the embodiments allow the disclosure of the present invention to be complete, and those of ordinary skill in the art to which the present invention pertains. It is provided to fully inform the person of the scope of the invention, and the present invention is only defined by the scope of the claims. That is, various changes may be made to the embodiments presented by the present invention. It should be understood that the embodiments described below are not intended to limit the embodiments, and include all modifications, equivalents, and substitutes thereto.

The size, thickness, width, length, etc. of the components shown in the drawings may be exaggerated or reduced for convenience and clarity of description, so that the present invention is not limited to the illustrated form.

Unless otherwise defined, all terms (including technical and scientific terms) used herein may be used with the meaning commonly understood by those of ordinary skill in the art to which the present invention belongs. In addition, terms defined in a commonly used dictionary are not to be interpreted ideally or excessively unless clearly defined in particular.

Spatially relative terms 'above', 'upper', 'on', 'below', 'beneath', 'lower', etc. As illustrated, it may be used to easily describe a correlation between one element or components and another device or components. Spatially relative terms should be understood as terms including different orientations of the device when used in addition to the orientations shown in the drawings. For example, when an element shown in the drawing is turned over, an element described as 'below or beneath' of another element may be placed 'above' of the other element. Accordingly, the exemplary term 'down' may include both the direction of the bottom and the top.

In this specification, 'and/or' includes each and every combination of one or more of the recited items. The singular also includes the plural, unless the phrase specifically states otherwise. As used herein, 'comprises' and/or 'comprising' does not exclude the presence or addition of one or more other components in addition to the stated components. Numerical ranges indicated using 'to' indicate numerical ranges including the values stated before and after them as lower and upper limits, respectively. 'About' or 'approximately' means a value or numerical range within 20% of the value or numerical range recited thereafter.

In this specification, the first direction (X) means an arbitrary direction in a plane, and the second direction (Y) means another direction that intersects or is perpendicular to the first direction (X) in the plane. In addition, the third direction Z means a direction perpendicular to the plane. Unless otherwise defined, 'plane' means a plane to which the first direction (X) and the second direction (Y) belong. In addition, unless otherwise defined, 'overlapping' means that the components overlap in the third direction (Z) in the plane view.

As used herein, the term 'protrusion pattern' refers to a structure having a shape protruding from a certain reference plane. The planar arrangement of the pattern may be regular or irregular. A plurality of protrusion patterns are gathered to form a cluster pattern of a specific shape, and even when the cluster patterns are substantially regularly arranged, the term protrusion pattern means any one of a plurality of protrusion patterns forming one cluster pattern can be used as

In the present specification, surface roughness defined as skewness or surface skewness may mean a characteristic value indicating the direction and degree of asymmetry with respect to an average value. That is, in the case of surface roughness, when the surface skewness (Rsk) has a negative value, it means that the tendency of a surface in which a recessed portion is formed from an approximately or relatively flat surface is large. On the other hand, in the case of surface roughness, when the surface skewness has a positive value, it means that a surface having a portion protruding from an approximately or relatively flat surface tends to be large. In addition, when the surface skewness is 0, it means that the roughness is symmetrical up and down from the average value. For example, a waveform such as a cosine function or a sine function may have a skewness value of zero. You can refer to the image below for skewness.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view of a polishing apparatus according to an embodiment of the present invention.

Referring to FIG. 1 , the polishing apparatus 1 according to the present embodiment includes a polishing platen 10 connected to a rotating shaft and a polishing pad 11 disposed on the polishing platen 10 , and the polishing pad 11 . ) may further include a nozzle 60 and/or a carrier 40 for supplying the slurry 70 on the polishing surface. Although the present invention is not limited thereto, in the polishing apparatus 1 according to the present embodiment, a conditioner for adjusting the surface roughness of the polishing surface of the polishing pad 11 may be unnecessary.

The abrasive platen 10 is configured in a substantially circular plate shape and can rotate, for example, in a counterclockwise direction. Further, the polishing platen 10 can stably support the polishing pad 11 thereon. That is, the abrasive platen 10 may provide a function such as a rotary table.

The polishing pad 11 may be disposed on the polishing platen 10 . An upper surface of the polishing pad 11 in contact with the polishing target substrate 50 may form a polishing surface. Although not shown in FIG. 1 , fine-sized patterns and/or trenches may be formed on the polishing surface, that is, the upper surface of the polishing pad 11 . The shape, morphology or topology of the polishing surface of the polishing pad 11 will be described later in detail with FIG. 2 and the like.

The polishing target substrate 50 may be in a fixed position by being eccentric with the rotation axis of the polishing platen 10 or the rotation axis of the polishing pad 11 . The polishing target substrate 50 may be in a state of being fixed by the carrier 40 connected to the rotation shaft and rotating by the carrier 40 . The rotation direction of the polishing target substrate 50 may be the same as the rotation direction of the polishing pad 11 , but the present invention is not limited thereto, and the rotation direction of the polishing target substrate 50 and the polishing pad 11 is opposite. It could be a direction. The polishing target substrate 50 to be polished in contact with the polishing pad 11 may be, for example, a semiconductor wafer substrate or a display substrate, but the present invention is not limited thereto.

The nozzle 60 may be disposed on the polishing pad 11 to supply the slurry 70 to the polishing surface of the polishing pad 11 . In the present specification, the term 'slurry' may be used to have substantially the same meaning as abrasive liquid or abrasive particles. The slurry 70 flows on the polishing surface of the polishing pad 11 by centrifugal force generated by the rotation of the polishing pad 11 , and at least a portion of the slurry 70 penetrates between the polishing pad 11 and the polishing target substrate 50 . It can contribute to polishing through chemical reactions.

Hereinafter, the polishing pad 11 will be described in more detail with further reference to FIGS. 2 to 6 . FIG. 2 is a plan layout of the polishing pad of FIG. 1 ; 3 is an enlarged perspective view showing an enlarged portion A of FIG. 2 . 4 is a plan view illustrating an arrangement of the protrusion pattern of FIG. 2 . FIG. 5 is an enlarged perspective view showing an enlarged protrusion pattern of FIG. 2 . 6 is a cross-sectional view taken along line B-B' of FIG. 3 .

2 to 6 , the polishing pad 11 according to the present embodiment may have a substantially circular shape in a plan view. Also, the polishing pad 11 may include a support layer 100 and a pattern layer 200 disposed on the support layer 100 . The upper surface of the protrusion pattern 230 of the pattern layer 200 may form a polishing surface as a whole. The support layer 100 and the pattern layer 200 may each include a material having a predetermined flexibility.

In an exemplary embodiment, the strength, rigidity, and/or hardness of the support layer 100 may be less than that of the pattern layer 200 . That is, the support layer 100 may have greater flexibility and a smaller modulus of elasticity than the pattern layer 200 . The elastic modulus is meant to include a loss modulus and/or a storage modulus.

Through this, when the surface of the polishing target substrate 50 has a fine curve, when the planarization characteristic required for the polishing target substrate 50 is high, and/or even when the polishing pad 11 has a fine curve, the polishing pad The protrusion pattern 230 formed on the upper surface of (11) may be in close contact along the curvature of the polishing target substrate 50 to perform polishing. That is, the polishing pad 11 may follow the surface of the polishing target substrate 50 . This will be described later in conjunction with FIG. 7 and the like.

The support layer 100 and the pattern layer 200 may be made of the same or different materials. As a non-limiting example, the support layer 100 and the pattern layer 200 may include substantially the same polymer material. Examples of the polymer material include (poly) urethane (PU), (poly) (meth) acrylate ((poly) (meth) acrylate), (poly) epoxy, acrylo Nitrile butadiene styrene (ABS), (poly) etherimide ((poly) etherimide), (poly) amide ((poly) amide), (poly) propylene ((poly) propylene), (poly) butadiene ((poly) butadiene ), polyalkylene oxide, (poly) ester ((poly) ester), (poly) isoprene ((poly) isoprene), (poly) styrene ((poly) styrene), (poly) ethylene ( (poly)ethylene), (poly)carbonate ((poly)carbonate), polyfluorene, polyphenylene, polyazulene, polypyrene, polynaphthalene, poly-p-phenylenevinylene, polypyrrole, polycarbazole, poly indole, polyaniline, or combinations thereof.

The rigidity of the support layer 100 and the pattern layer 200 may be controlled through the degree of crosslinking of the polymer material, but the present invention is not limited thereto.

The support layer 100 may have a substantially circular shape in a plan view, and may provide a function of supporting the pattern layer 200 thereon. The lower limit of the minimum thickness T1 of the support layer 100 may be about 1 mm or more, or about 2 mm or more, or about 3 mm or more. When the thickness of the support layer 100 is smaller than the above range, the support layer 100 may not exhibit sufficient elasticity or strain, and it may be difficult for the polishing pad 11 to follow the curve of the substrate 50 to be polished. The upper limit of the thickness T1 of the support layer 100 is not particularly limited, but may be, for example, about 5 mm or less, or about 4 mm or less. In the present specification, when a plurality of upper and lower limits of a numerical range are described, the numerical range disclosed herein is a numerical range between any upper limit arbitrarily selected from among a plurality of upper limits and a lower limit of any one arbitrarily selected from among a plurality of lower limits. should be understood as disclosing.

In some embodiments, the porosity of the support layer 100 may be different from the porosity of the pattern layer 200 to be described later. As a non-limiting example, the support layer 100 may have a higher porosity than the pattern layer 200 to be described later, specifically, the protrusion pattern 230 . For example, the porosity of the support layer 100 may be about 1.3 times or more, or about 1.4 times or more, or about 1.5 times or more of the porosity of the pattern layer 200 . As described above, the support layer 100 may have greater flexibility than the pattern layer 200 . In order to implement this, the type of material, physical properties, etc. may be controlled, but may also be controlled using the porosity. However, the present invention is not limited thereto, and in another embodiment, the porosity of the support layer 100 may be smaller than the porosity of the pattern layer 200 .

The pattern layer 200 may be disposed on the support layer 100 . In an exemplary embodiment, the pattern layer 200 may be directly disposed on the support layer 100 without a separate bonding layer. The pattern layer 200 may include a base 210 and a plurality of protruding patterns 230 disposed on the base 210 . A plurality of protrusion patterns 230 may be spaced apart from each other on the base 210 .

The base 210 and the protrusion pattern 230 are integrally and continuously formed without a physical boundary, and may be made of the same material. In another embodiment, the base 210 and the protrusion pattern 230 may have a physical boundary and may be made of different materials. In this case, the strength, rigidity, and/or hardness of the base 210 may be smaller than that of the protrusion pattern 230 .

The base 210 may be a portion overlapping the plurality of protruding patterns 230 spaced apart from each other in the third direction (Z). In addition, the base 210 may be a portion that occupies most of an area corresponding to the polishing pad 11 in a plan view and covers the support layer 100 . Alternatively, the base 210 may mean the remaining portion of the pattern layer 200 excluding the protrusion pattern 230 to be described later.

The lower limit of the maximum thickness T2 of the base 210 may be about 0.01 mm or more, or about 0.05 mm or more, or about 0.1 mm or more, or about 0.5 mm or more, or about 1.0 mm or more. When the thickness of the base 210 is smaller than the above range, it may be difficult for the polishing pad 11 to follow the curve of the substrate 50 to be polished. The upper limit of the thickness T2 of the base 210 is not particularly limited, but may be, for example, about 3.0 mm or less, or about 2.5 mm or less, or about 2.0 mm or less, or about 1.5 mm or less.

The plurality of protrusion patterns 230 may be disposed on one base 210 . The protrusion pattern 230 may be a portion that forms the uppermost level of the polishing pad 11 and forms a polishing surface. That is, even when the pattern layer 200 has a multi-stage structure, the protruding pattern 230 may mean a protruding portion contributing to actual polishing.

In an exemplary embodiment, the protrusion pattern 230 may have a substantially rectangular shape in a plan view. In another embodiment, the protrusion pattern 230 may have an approximately '+' shape or an approximately 'X' shape in a plan view. In another embodiment, the plurality of protrusion patterns form a cluster with a predetermined regularity, and the cluster patterns may be arranged regularly or irregularly.

In addition, although FIG. 2 illustrates a state in which the plurality of protrusion patterns 230 are substantially regularly arranged in a plan view, in another embodiment, the plurality of protrusion patterns 230 are substantially irregularly arranged, or arbitrary may have a random arrangement of In another embodiment, the plurality of protrusion patterns 230 may be gathered to form one cluster pattern, and the cluster patterns may be arranged substantially regularly. In this case, the plurality of protrusion patterns 230 in a certain cluster pattern may be arranged with regularity.

In the present embodiment, the protrusion patterns 230 may be repeatedly arranged along at least two directions to form a regular arrangement. For example, the protrusion patterns 230 may be repeatedly arranged with substantially the same spacing along the first direction X and the second direction Y to be approximately arranged in a matrix.

The size of the protrusion pattern 230 may be a major factor affecting a polishing rate, a polishing non-uniformity NU, and the like of the polishing pad 11 . The inventors of the present invention have completed the present invention by confirming that the polishing rate can be controlled by the circumferential length and/or area of the protruding pattern 230 .

In an exemplary embodiment, in a plan view, the polished area occupied by the protruding pattern 230 , or the actual polished area, that is, the area occupied by the upper surface of the protruding pattern 230 , is about 1.0% or more and 80% or less of the total area, or about 1.0% or more and 70% or less, or about 1.0% or more 60% or less, or about 1.0% or more 50% or less, or about 1.0% or more 45.0% or less, or about 1.0% or more 40% or less, or about 1.0% or more 35 % or less, or about 1.0% or more and 30% or less, or about 3.0% or more and 30.0% or less, or about 5.0% or more and 30.0% or less, or about 10.0% or more and 30.0% or less. That is, the lower limit of the polishing area with respect to the total area may be about 1.0%, or about 3.0%, or about 5.0%. The upper limit of the abrasive area to the total area may be about 80%, or about 70%, or about 60%, or about 50%, or about 45%, or about 40%, or about 35%, or about 30%. .

As used herein, the term 'polishing area' or 'actual polishing area' refers to an area where the upper end of the protrusion pattern 230 comes into contact with the substrate 50 to be polished and contributes to polishing. That is, it means an area occupied by a portion forming the maximum height in the pattern layer 200 of the polishing pad 11 . The polishing area may be calculated as the sum of the upper areas of the protruding patterns 230 with respect to the total area of the polishing pad 11 . The sum of can also be used with substantially the same meaning.

In addition, as will be described later, the protrusion pattern 230 may have a first pore P1 and a second pore P2 contributing to an increase in the peripheral length of the edge. In this case, the area occupied by the above-described protrusion pattern 230 may mean an area excluding the area occupied by the first pores P1 and the second pores P2. The first pore (P1) and the second pore (P2) will be described in detail later.

For example, as shown in FIG. 4 , when the planar shape of a certain protrusion pattern 230 is an approximately square shape with one side length W, the planar area occupied by the protrusion pattern 230 is W×W It may be an area excluding the area occupied by the first pores P1 and the second pores P2. Accordingly, the area S occupied by the protrusion pattern 230 may be slightly smaller than W×W. Specifically, the polishing area S formed by any one protrusion pattern 230 may be (W×W)−(area occupied by the first pores + area occupied by the second pores).

As another example, when the planar area occupied by any one protrusion pattern 230 is expressed as S, the ratio of the polishing area to the total planar area of the polishing pad 11 may be expressed as S×n. have. Here, n is the total number of protrusion patterns 230 included in the polishing pad 11 .

As another example, the ratio of the polishing area may be expressed as an area occupied by the protrusion patterns 230 belonging to the verification target area with respect to an arbitrary verification target area of the polishing pad 11 . In this case, when the area to be checked (eg, inspection area) is the x-axis and the area occupied by the protrusion pattern 230 in that case is the y-axis, the ratio of the polishing area is expressed as a slope of the graph. may be

When the above-described ratio (%) of the polishing area is within the above range, an excellent polishing rate is exhibited, and polishing characteristics such as a polishing rate can be controlled by changing the arrangement, shape, and/or size of the protruding pattern 230 . In addition, when the polishing area is too large, the polishing rate may decrease again due to the reduction of the actual contact pressure and the restriction of the flow of the slurry.

On the other hand, in a unit area of a planar view, for example, 1 mm ² , the lower limit of the perimeter length per unit area formed by the planar perimeter of the protrusion pattern 230 is about 1.0 mm/mm ² or more, or about 3.0 mm/mm ² or more, or about 5.0 mm/mm ² or greater, or about 8.0 mm/mm ^{2 or} greater.

In addition, the upper limit of the circumferential length per unit area formed by the planar circumference of the protrusion pattern 230 is about 250.0 mm/mm ² or less, or about 200.0 mm/mm ² or less, or about 150.0 mm/mm ² or less, or about 100.0 or less. mm / mm ² or less, preferably about 50.0mm / mm ² or less, preferably about 30.0mm / mm ² or less, preferably about 24.0mm / mm ² or less, preferably about 20.0mm / mm ² or less, preferably about 16.0mm / mm ² or less , or about 10.0 mm/mm ² or less.

As used herein, the term 'perimeter length per unit area' refers to an outer length formed by the polishing area of the protruding patterns 230 per ^{unit area (1 mm 2 ).}

For example, if it is assumed that the entire rectangle shown in FIG. 4 has ^{an area of 1 mm 2} , the perimeter length per unit area may be expressed as four protruding patterns×L. Here, L denotes a perimeter length formed by any one protrusion pattern 230 . For example, L may be somewhat larger than 4 sides×W. This is because, as described above, the first pore P1 and the second pore P2 cause an increase in the circumferential length of the protruding pattern 230 . That is, in the present specification, the circumferential length of the protruding pattern 230 is a closed curve formed by an edge including the first pores P1 of the protruding pattern 230 having an arbitrary shape on a plane as well as an outer edge. It is formed including the circumferential length of the second pore (P2) located inside the.

As another example, the perimeter length per unit area may be expressed as a perimeter length formed by the protrusion pattern 230 belonging to the confirmation object area with respect to an arbitrary confirmation object area of the polishing pad 11 . In this case, when the area to be checked (eg, inspection area) is the x-axis and the total perimeter length formed by the protrusion pattern 230 in that case is the y-axis, the perimeter per unit area is the slope of the graph may be expressed as

When the above-described peripheral length per unit area (mm/mm ² ) is in the above range, an excellent polishing rate may be exhibited. This will be described later along with experimental examples and the like.

In an exemplary embodiment in which the protrusion pattern 230 is substantially rectangular in plan view, the maximum width Wmax of the protrusion pattern 230 may be formed in a substantially diagonal direction. On the other hand, the minimum width W of the protrusion pattern 230 may correspond to the length of any one side. In the present specification, the minimum width of the protrusion pattern means the width of the portion having the smallest length among the length, width or width on a plane of any one protrusion pattern 230 that is physically separated and spaced apart from other protrusion patterns. do. In addition, the minimum width means the minimum length that requires control in the process and/or process equipment for forming the protrusion pattern 230, and excluding the length increased by the pores, it can mean the shortest distance between one point and another point. have.

The maximum width Wmax of the protrusion pattern 230 may vary depending on the planar shape of the protrusion pattern 230 , but, for example, the maximum width Wmax of the protrusion pattern 230 is about 1.0 mm or less, or about 0.8 mm or less. , or about 0.5 mm or less, or about 0.3 mm or less.

The minimum width of the protrusion pattern 230 may correspond to the length W of one side. The lower limit of the minimum width W of the protrusion pattern 230 is about 20 μm or more, or about 30 μm, or more, or about 40 μm or more, or about 50 μm or more, or about 60 μm or more, or about 70 μm or more, or about 80 μm or more, or about 90 μm or more, or about 100 μm or more. The upper limit of the minimum width W is not particularly limited, but may be less than the maximum width Wmax. As a non-limiting example, the minimum width of the protrusion pattern 230 may be in a range of about 40 μm to 70 μm, or about 50 μm to 60 μm.

The height H of the protrusion pattern 230 may affect the polishing characteristics and durability of the polishing pad 11 . The minimum height H of the protrusion pattern 230 means the shortest vertical distance from the upper surface 210s of the base 210 to the upper end of the protrusion pattern 230 .

The height H of the protrusion pattern 230 may have a correlation with the minimum width W of the protrusion pattern 230 . That is, when the width ratio of the protrusion pattern 230 on the vertical section becomes too large, the polishing pad 11 rotates and in the process of closely contacting the polishing target substrate 50 in a planar direction, for example, the first direction (X) and the second direction (Y). Inclination or distortion in any direction in the plane to which it belongs may occur, and the designed polishing may not be fully performed. On the other hand, when the height H of the protrusion pattern 230 is too small, the life of the polishing pad 11 may be too short due to damage or abrasion occurring at the top of the protrusion pattern 230 as the polishing process is repeated.

In view of the above, the minimum height H of the protruding pattern 230 is about 0.5 to 2.5 times, or about 0.6 to 2.0 times, or about 0.7 to 1.8 times, or about the minimum width of the protruding pattern 230. 0.8 times to 1.7 times, or about 0.9 times to 1.6 times, or about 1.0 times to 1.5 times.

As described above, the pattern layer 200 including the protrusion pattern 230 may have porosity and a plurality of pores P. The plurality of pores P may include a first pore P1 , a second pore P2 , and a third pore P3 , and may further include a fourth pore P4 . In this specification, the term 'pore' may be used interchangeably with terms such as 'void' and 'porous'.

The first pore P1 is exposed on the upper surface of the protrusion pattern 230 , and is located at the edge of the protrusion pattern 230 in a plan view and refers to a pore contributing to an increase in the circumferential length L. That is, the first pores P1 may form indentations at the edge of the plane of the protrusion pattern 230 . The first pore P1 may have a shape such as a circular arc or an elliptical arc in a plan view.

The second pore P2 is exposed on the upper surface of the protruding pattern 230, that is, the polishing surface, and the first pore ( It may be the same as P1). On the other hand, the second pore (P2) is not a shape forming an indentation like the first pore (P1), but a point that is a closed curve shape such as an approximately circle, an ellipse, or a distorted circle or ellipse shape from a plan view point of the first pore (P1) is different from

In an exemplary embodiment, in a plan view, the area occupied by the pores exposed on the top of the protrusion pattern 230 with respect to the entire upper surface of any one protrusion pattern 230, that is, the first pore P1 and the second pore ( The proportion of the area occupied by P2) is about 10% to 80%, or about 10% to 70%, or about 10% to 60%, or about 10% to 50%, or about 20% to 40%, or about 25 % to 35%.

In other words, in any one of the protruding patterns 230 , the polishing area S formed by the aforementioned one protruding pattern is about 20% to 90% of the apparent area of the one protruding pattern, for example, (W×W). %, or between about 30% and 90%, or between about 40% and 90%, or between about 50% and 90%, or between about 60% and 80%, or between about 65% and 75%.

The first pores P1 and the second pores P2 may be approximately uniformly distributed. When too many first pores P1 and second pores P2 are formed, that is, when the arrangement density is too high, too many first pores P1 located at the edge may be formed. In this case, the upper surface of the protruding pattern 230 , that is, the polished surface may not have a complete shape, and durability may be reduced, such as the protruding pattern 230 is collapsed during the polishing process. On the other hand, when the number of the first pores P1 and the second pores P2 is too small, an increase in the length of the edge of the protrusion pattern 230 may be insignificant.

In the process of manufacturing the polishing pad 11 including the protruding pattern 230 having porosity according to the present embodiment, first, the contact pressure required for polishing and the planar shape and length elements of the protruding pattern 230 are determined, , the size of the pores P included in the protrusion pattern 230 may be determined. In addition, a polishing area, ie, an upper area, of the protrusion pattern 230 may be determined in consideration of the contact pressure. Then, the perimeter length per unit area of the protruding pattern 230 is determined in consideration of the determined contact pressure and the polishing area, and accordingly, the polishing pad 11 including the pattern layer 200 including the protruding pattern 230 is manufactured. can do.

In this case, as described above, it is not easy to simultaneously control the factors affecting the polishing rate, that is, the ratio of the polishing area of the protruding pattern 230 and the circumferential length per unit area. In particular, there is a limit to increasing the perimeter length per unit area in a state in which the required polishing area is determined. If the perimeter length is increased by changing the pattern shape, it may cause a reduction in the polishing area, or at least increase the manufacturing cost due to a reduction in the minimum width of the pattern.

However, according to the present embodiment, it is possible to relatively easily achieve an increase in the perimeter length per unit area while substantially maintaining the polishing area using the pores P of the protruding pattern 230 . In the case of having an area ratio of the first pores (P1) and the second pores (P2) as described above, the first pores (P1) and the second pores (P2) causing an increase in the circumferential length do not exist Compared to that, the circumferential length of the protruding pattern 230 according to the present embodiment having the first pores P1 may be increased by about 1.5 times to 3.5 times, or about 2.0 times to 3.0 times, or about 2.2 times to 2.7 times.

In addition, some differences may occur depending on the planar shape of the protrusion pattern 230 , but as in the present embodiment, the protrusion pattern 230 has edges extending in the first direction (X) and the second direction (Y). In this case, the total perimeter length of any one protrusion pattern 230 is about 4 to 50 times, or about 5 to 50 times, or about 8 to 40 times the minimum width W of the protruding pattern 230 . , or about 10 to 30 times, or about 15 to 25 times.

Alternatively, the circumferential length formed by the protrusion pattern 230 per unit area is about 0.1 to 1.0 times, or about 0.2 to 0.9 times, or about 0.3 the reciprocal of the minimum width W of any one of the protruding patterns 230 . times to 0.8 times.

Meanwhile, as described above, the lower limit of the ratio of the polishing area occupied by the protruding patterns 230 to the total area of the polishing pad 11 is about 1.0%, or about 3.0%, or about 5.0%, or about 10%, and the upper limit is about 10%. may be about 80%, or about 70%, or about 60%, or about 50%, or about 45%, or about 40%, or about 35%, or about 30%.

In this case, the ratio of the area occupied by the first pores P1 and the second pores P2 on the upper surface of the protrusion pattern to the total area of the polishing pad 11, or the first pores P1 and the second pores per unit area ( The proportion of the area occupied by P2) may be about 0.01% to 25%, or about 0.5% to 20%, or about 1.0% to 15%.

In addition to the ratio of the upper area (ie, the actual polished area) of the protruding pattern 230 and the perimeter per unit area as factors affecting the polishing rate, the inventors of the present invention found that the protruding pattern 230 is a predetermined Excavated elements in the case of having the pores (P) larger than the size and came to complete the present invention. That is, the area occupied by the pores P as described above, the area occupied by the pores P with respect to the total area, and the area ratio excluding the area occupied by the pores P from the upper area of the protrusion pattern 230 are When it is within the above range, excellent polishing properties may be exhibited.

The first pore P1 and the second pore P2 may have substantially the same size. Since the first pores P1 are located at the edge of the protrusion pattern 230 and do not have a complete circular or oval shape, the size (eg, diameter, particle size) of the first pores P1 is determined by the first pores P1. ) may be understood as a size corresponding to twice the radius of curvature of the arc formed, but the present invention is not limited thereto. If the first pores (P1) and the second pores (P2) have an elliptical or distorted shape rather than a complete circle shape, the size of the pores is the diameter of the virtual circle corresponding to the area of the pores, such as an ellipse, that is, equivalent diameter.

The size of the pores P, that is, both the distribution range of the diameter and the average diameter may affect the polishing rate, but in particular, the average diameter may be a very important factor. As described above, the arrangement density or density of the pores P may also affect the edge shape and durability of the protrusion pattern 230 , but may also affect the average diameter of the pores P.

In an exemplary embodiment, the average diameter of the pores P may be in the range of about 5 μm to 50 μm, or about 10 μm to 45 μm, or about 15 μm to 40 μm, or about 20 μm to 35 μm. .

When the average diameter of the pores (P) is too large, for example, a plurality of first pores (P1) are not located on any one side forming the minimum width of the protrusion pattern 230, but one on any one side. Only three to three levels of the first pores P1 may be located, or even the size of the first pores P1 may be greater than the length of any one side of the protrusion pattern 230 . In this case, it is difficult to exhibit an effect of substantially increasing the circumferential length, and a reduction in the polishing area of the protruding pattern 230 may be caused. In addition, the difference between the area excluding only the area of the first pores P1 from the upper area of the protrusion pattern 230 and the area excluding the entire area of the pores P from the upper area of the protrusion pattern 230 increases, It may not show the designed polishing rate.

On the other hand, if the average diameter of the pores (P) is too fine, the durability of the protrusion pattern 230 may be deteriorated due to the first pores P1 located at the edge of the protrusion pattern 230 and may cause a polishing defect.

In spite of the difference in the average diameter of the pores (P), it is possible to improve the intended polishing properties by configuring the arrangement density and distribution of the pores, such as the area occupied by the pores (P), as described above.

Although the present invention is not limited thereto, the diameter distribution of the pores (P) including the first pores (P1) and the second pores (P2) is about 1 μm to 500 μm, or about 1 μm to 400 μm, or It may be in the range of about 1 μm to 300 μm.

In some embodiments, a side surface of the protrusion pattern 230 may have third pores P3 . That is, the third pores P3 mean pores exposed only on the side surface, not on the upper surface of the protrusion pattern 230 . At least some of the plurality of pores included in the protrusion pattern 230 may be exposed to a side surface of the protrusion pattern 230 to form a recessed groove.

The groove of the side surface of the protrusion pattern 230, that is, the third pore P3, is not exposed to the upper surface of the protrusion pattern 230, that is, the polishing surface, and the first pore ( It has a difference from P1) and the second pore P2.

A predetermined separation distance may be provided between the protruding patterns 230 adjacent to each other. The polishing liquid, ie, the slurry 70, flows through the separation space and may affect polishing properties. If the slurry flow path between the protrusion patterns 230 is too small, a problem such as partial agglomeration of the slurry 70 may occur. There is a limit to controlling the separation distance between the protrusion patterns 230 having a predetermined shape, and this may cause a reduction in the area of the upper portion of the protrusion patterns 230 .

The side surface of the protrusion pattern 230 according to the present embodiment has predetermined grooves formed by the third pores P3, and the grooves may be used to contribute to an increase in the flow of the slurry 70 . The size of the third pores P3 and the like may be substantially the same as those of the first pores P1 and the second pores P2, and overlapping descriptions will be omitted.

Meanwhile, although the present invention is not limited thereto, when the polishing process is performed using the polishing pad 11 according to the present embodiment, the protrusion pattern 230 is cut from the upper end and the height H of the protrusion pattern 230 gradually increases. can be lowered At this time, the height of the protrusion pattern 230 is lowered, the third pore P3 is exposed, and may be changed to the above-described first pore P1 .

As described above, the size of the pores (P) is a very important factor in that it affects the polishing efficiency by causing an increase in the circumferential length on the polishing surface and a change in the polishing area by the pores (P1, P2) in a plan view. to be. In addition, in particular, in the case of the third pore P3 , it may be exposed to the side surface of the protrusion pattern 230 to affect durability of the protrusion pattern 230 .

In this view, on any cross-section, the ratio of the sum of the heights occupied by the third pores P3 to the vertical height H of the protrusion pattern 230 is about 10% to 50%, or about 15% to 50%, or from about 20% to 50%, or from about 20% to 45%, or from about 20% to 40%. Also, the average diameter of the third pores P3 may be in the range of about 5% to 15%, or about 10% to 15% of the height H of the protrusion pattern 230 .

When one diameter of the third pores (P3), or the sum of the diameters of the third pores (P3) is too large, the protrusion pattern 230 has too much fluidity in the third direction (Z), and/or the protrusion pattern ( 230) may be degraded. Therefore, it is preferable to make the sum of the diameter of one third pore P3 and the length in the third direction Z occupied by the plurality of third pores P3 arranged in the third direction Z within the above range. can

As described above, the first pores (P1) and the second pores (P2) contribute to an increase in the peripheral length of the edge of a certain protrusion pattern 230, and can also affect the polishing area formed by the protrusion pattern 230. have. In addition, the third pores P3 may be exposed on the side surface of the protrusion pattern 230 to affect the flow of the slurry 70 .

In manufacturing the polishing pad 11 , for example, when the circumferential length of the protruding pattern 230 is controlled after determining the polishing area in design, the size of the protruding pattern 230 is very limited. In addition, when the protrusion pattern 230 is formed in detail in order to secure a sufficient circumferential length, it causes an increase in manufacturing cost.

However, as in the present embodiment, when the protrusion pattern 230 forms pores, a perimeter length greater than the calculated perimeter may be formed. Therefore, even if the manufacturing cost is increased as in the prior art, when the protrusion pattern 230 is formed in detail, a larger increase in the circumferential length can be achieved. For example, the circumferential length of the protruding pattern 230 of the actually manufactured polishing pad 11 may be greater than the initially determined circumferential length per unit area. On the other hand, even if a larger protrusion pattern 230 is formed than in the prior art, that is, even if the manufacturing cost is reduced, there is an advantage in that the perimeter length of the conventional level can be secured.

In some embodiments, the remaining portion of the pattern layer 200 excluding the protrusion pattern 230 , that is, the upper surface 210s of the base 210 may have exposed pores. The pores exposed through the upper surface 210s of the base 210 may be defined as the fourth pores P4. The fourth pores P4 may form a recess recessed toward the base 210 .

The fourth pores P4 exposed through the upper surface of the base 210 are not located on the polishing surface, unlike the pores of the upper surface of the protrusion pattern 230 , that is, the first pores P1 and the second pores P2 . There is a difference in That is, the fourth pores P4 may not be located on the polishing surface and may not contact the polishing target substrate. The size of the fourth pore P4 may be substantially the same as that of the first pore P1 and the second pore P2, and overlapping descriptions will be omitted.

In an exemplary embodiment, the fourth pores P4 may have an occupied area within a predetermined range. For example, the ratio of the area occupied by the pores exposed on the base 210, that is, the fourth pores P4, to a predetermined inspection area, for example, the inspection area of the base 210 is about 10% to 50%, or from about 10% to 40%, or from about 15% to 40%, or from about 20% to 40%, or from about 25% to 40%, or from about 30% to 40%.

When the fourth pores P4 having the same average size as described above are located on the upper surface 210s of the base 210 that does not contribute to the actual polishing, the fourth pores P4 occupy too large an area Abrasive particles or abrasive by-products may be stagnated into the fourth pores (P4). On the other hand, if the area occupied by the fourth pores P4 is too small, it may not contribute to improving the flow efficiency of the slurry.

In addition to the aforementioned pores, that is, the first pores P1 to the fourth pores P4 exposed through the surface of the pattern layer 200 , pores may be formed inside the pattern layer 200 .

Also, in some embodiments, the support layer 100 may also have pores. The pores of the support layer 100 may be defined as fifth pores P5. The fifth pores P5 are at least partially located inside the support layer 100 , and at least partially exposed through the surface of the support layer 100 , for example, one surface of the support layer 100 on which the pattern layer 200 is disposed.

In this case, as will be described later, in the method of manufacturing the polishing pad 11 , when the pattern layer 200 is directly cured on the support layer 100 , at least a portion of the composition constituting the pattern layer is the exposed agent of the support layer 100 . 5 It can penetrate the pores (P5). That is, the base 210 of the pattern layer 200 may at least partially fill or penetrate the fifth pores P5. Through this, even without interposing a separate adhesive layer between the support layer 100 and the pattern layer 200 , a strong bond may be formed between the support layer 100 and the pattern layer 200 . Although the present invention is not limited thereto, if the support layer 100 and the pattern layer 200 are separately prepared and then arranged and disposed, the pattern layer 200 will not be located within the fifth pores P5 of the support layer 100 . may be

In addition, as described above, the porosity of the support layer 100 may be greater than the porosity of the pattern layer 200 . That is, the porosity of the pores formed by the fifth pores (P5) of the support layer 100 is the first pores (P1), the second pores (P2), the third pores (P3) and the fourth of the pattern layer (200) It may be larger than the porosity formed by the pores including the pores (P4).

As a non-limiting example, the average diameter of the pores including the first pores (P1) to the fourth pores (P4) may be smaller than the average diameter of the fifth pores (P5).

As another non-limiting example, the distribution density of the pores including the first pores (P1) to the fourth pores (P4) may be smaller than the distribution density of the fifth pores (P5).

As another non-limiting example, with respect to a predetermined inspection area, the surface roughness of the surface of the pattern layer 200 , for example, the upper surface and side surfaces of the protruding pattern 230 , and/or the upper surface of the base 210 is determined by the surface roughness of the support layer 100 . ) may be smaller than the surface roughness of

As such, it is possible to more efficiently represent the following characteristics, which will be described later, by using the difference between the first pores P1 to the fifth pores P5. Hereinafter, follow characteristics and polishing characteristics of the polishing pad 11 according to the present embodiment will be described with further reference to FIGS. 7 to 10 .

7 is an exemplary schematic diagram illustrating a state in which the polishing pad 11 is in contact with the substrate 50 to be polished, and FIG. 8 is a state in which the polishing pad polished by a conventional conditioner is in contact with the substrate 50 to be polished. It is an exemplary schematic diagram shown.

First, referring to FIG. 7 , when the lower surface of the substrate 50 to be polished has a fine curve, the polishing pad 11 according to the present embodiment has sufficient flexibility in the vertical direction, for example, gravity, as the support layer 100 has sufficient flexibility. Elastic deformation in the direction may be possible. Through this, the upper surface of the protruding pattern 230 forming the polishing surface can be in close contact with the curved surface of the polishing target substrate 50 , and the slurry is evenly distributed between the pattern layer 200 and the polishing target substrate 50 , and excellent polishing rate can be achieved.

In addition, the portion in which the polishing target substrate 50 convexly protruding to the lower side is in contact with the polishing pad 11 is where the polishing target substrate 50 concavely indented relatively upward is in contact with the polishing pad 11 . A relatively greater pressure can be applied compared to the part, thereby minimizing the polishing non-uniformity (NU) and achieving uniform polishing.

In particular, the polishing pad 11 according to the present embodiment forms the rigidity of the pattern layer 200 greater than that of the support layer 100 , so that when the polishing pad 11 is pressed against the substrate 50 to be polished, the pattern layer 200 . ), the deformation degree of the support layer 100 may be greater than that of the protrusion pattern 230 and the base 210 . As a non-limiting example, the pattern layer 200 may be configured such that only the support layer 100 is flexibly deformed while causing substantially no deformation or minimal deformation. If the protrusion pattern 230 has excessive flexibility and is easily deformed by vertical pressure, the polishing area of the protrusion pattern 230 is deformed, and the intended polishing rate is not exhibited due to shape deformation such as inclination in the horizontal direction. may not be

Therefore, the support layer 100, not the pattern layer 200, is deformed to follow the curve of the surface of the substrate 50 to be polished, and at the same time, an excellent polishing rate can be exhibited. Although the present invention is not limited thereto, as a non-limiting example, the maximum rate of change in the plane direction with respect to the vertical pressure of the pattern layer 200 including the protruding pattern 230 , or the material constituting the pattern layer 200 . The material may be selected so that it is about 20.0% or less, or about 15.0% or less, or about 10.0% or less, or about 5.0% or less.

On the other hand, referring further to FIG. 8 , in the case of the conventional polishing pad 11 ′, uniform roughness is exhibited over the entire surface of the polishing pad 11 ′ despite the surface roughness being maintained by a conditioner (not shown). It is substantially difficult to clean, and thus, it is impossible to adhere to the polishing target substrate 50 having a curved surface, thereby increasing polishing non-uniformity and even causing scratch defects.

9 is another exemplary schematic view showing a state in which the polishing pad 11 is in contact with the substrate 50 to be polished, and FIG. 10 is a state in which the polishing pad polished by a conventional conditioner is in contact with the substrate 50 to be polished. It is an exemplary schematic diagram showing. 9 and 10 illustrate a case in which the polishing target substrate 50 includes a device pattern 50b disposed on a base substrate 50a and an overcoat layer 50c thereon. The device pattern 50b may be a wiring pattern made of metal or an active pattern including a semiconductor material, but is not particularly limited.

First, referring to FIG. 9 , when the overcoating layer 50c having a very fine degree of curvature or step is located on the lower surface of the substrate 50 to be polished, the polishing pad 11 according to the present embodiment is The top of the pattern layer 200 may have a uniform height and the overcoat layer 50c may be uniformly planarized. That is, only the overcoating layer 50c protruding relatively downward convexly is selectively polished, and physical pressure is minimized on the overcoating layer 50c which is relatively concavely indented to the upper side, thereby damaging the elements of the substrate 50 to be polished. Global planarization can be achieved without Therefore, the polishing pad 11 according to the present embodiment may be applicable to the STI structure process or the like. This will be described later along with experimental examples.

On the other hand, referring further to FIG. 10 , in the case of the conventional polishing pad 11 ′, it is practically difficult to exhibit uniform roughness over the entire surface, and in some cases, it is polished up to the overcoat layer 50c that is relatively concavely indented upward. can be done Accordingly, the device of the polishing target substrate 50 may be damaged or only a degree of partial planarization may be achieved, so it is not suitable for use in a precision planarization process.

Hereinafter, other embodiments of the present invention will be described. However, the description of the same or extremely similar configuration to the above-described embodiment will be omitted, and this will be clearly understood by those skilled in the art from the accompanying drawings.

11 is a planar layout of a polishing pad according to another embodiment of the present invention. 12 is an enlarged perspective view showing an enlarged portion A of FIG. 11 . 13 is a cross-sectional view taken along line B-B' of FIG. 12 .

11 to 13 , the polishing pad 12 according to the present embodiment is different from the above-described embodiment in that it has a trench 300 formed in the pattern layer 202 .

The trench 300 may serve as a channel for transporting and discharging the slurry, etc. dropped on the upper surface of the polishing pad 12 . If necessary, the term 'trench' used herein may be used interchangeably with terms such as a channel, a groove, and a groove.

The trench 300 may include a linear radiation trench 310 extending in the first direction (X), the second direction (Y), and/or diagonally. The radiation trench 310 may have a shape extending in a substantially radial direction from the center of the circular polishing pad 12 . 11 illustrates a case in which eight radiation trenches 310 inclined in the first direction (X), the second direction (Y), and 45 degrees are formed.

Accordingly, the polishing pad 12 may be divided into eight sectoral regions having a central angle of approximately 45 degrees. At least a portion of the radiation trench 310 of the polishing pad 12 according to the present embodiment may extend in the arrangement direction of the protrusion patterns 230 , that is, in the first direction (X) and the second direction (Y). . However, the present invention is not limited thereto.

The radiation trench 310 may induce the slurry to move or flow in the radial outer direction of the polishing pad 12 due to centrifugal force generated according to the rotation of the polishing pad 12 . Through this, even when the slurry is dropped without moving the nozzle of the polishing apparatus, the slurry can be applied to the entire surface of the polishing pad 12, and excessive agglomeration is prevented in a portion to improve the utilization efficiency of the slurry can do it In some embodiments, the radiation trench 310 may be configured to increase in depth toward the outer direction.

In addition, the trench 300 may further include a concentric circle trench 320 arranged in concentric circles with respect to the center of the circular polishing pad 12 . 11 illustrates a case in which the number of concentric trenches 320 is three, of course, the present invention is not limited thereto.

Any concentric trench 320 may be provided to intersect the plurality of radiation trenches 310 . The concentric trench 320 may induce the slurry to move or flow in the rotational direction of the polishing pad 12 , ie, the circumferential direction, due to centrifugal force generated according to the rotation of the polishing pad 12 .

Although the present invention is not limited thereto, the slurry that preferentially flows in the outer direction of the polishing pad 12 by the radiation trench 310 may flow in the rotational direction of the polishing pad 12 by the concentric trench 320 . have. Therefore, forming the maximum width of the radiation trench 310 larger than the maximum width of the concentric trench 320 may be advantageous in terms of preventing agglomeration of the slurry. As a non-limiting example, the width of the radiation trench 310 is in the range of about 0.1 mm or more and 3.0 mm or less, or about 0.3 mm or more and 2.5 mm or less, or about 0.5 mm or more and 2.0 mm or less, or about 1.0 mm or more and 1.5 mm or less. can be in

In an exemplary embodiment, the inner wall of the trench 300 formed in the patterned layer 202 may have exposed pores. A pore exposed through an inner wall or a basal surface in the trench 300 , in particular, a pore exposed through the inner wall may be defined as a sixth pore P6 . The average diameter of the sixth pores P6 may be in the range of about 5 μm to 50 μm, or about 10 μm to 45 μm, or about 15 μm to 40 μm, or about 20 μm to 35 μm.

On the other hand, unlike shown in the drawing, pores may be substantially absent, a relatively small number, or a relatively small size of pores may exist on the base surface 310s of the trench 300 . Although the present invention is not limited thereto, when the trench 300 is formed using a laser or the like, at least a portion of the pores may be melted or collapsed while the laser is irradiated to the base surface 310s of the trench 300 .

For example, the surface roughness defined by the skewness of the basal surface 310s of the trench 300 , that is, the surface skewness, is greater than the surface roughness defined by the skewness of the inner wall of the trench 300 , that is, the surface skewness. can be large The surface skewness of the inner wall may have a negative value, and the surface skewness of the basal surface 310s may have a negative value, or 0 or a positive value. The surface skewness may be measured for an inspection area of about 0.1 mm ^{2 or more.} The upper limit of the inspection area is not particularly limited, but may be, ^{for example, about 5.0 mm 2 .}

Accordingly, when the surface skewness of the inner wall is subtracted from the surface skewness of the base surface 310s, it may have a positive value of 0 or more. That is, the difference may be greater than zero in the surface state of the polishing pad 12 before applying it to polishing, or in the surface state during processing after applying the polishing pad 12 to the polishing.

For another example, the arrangement density of the sixth pores P6 located on the inner wall of the trench 300 may be greater than the arrangement density of the sixth pores P6 located at the base surface 310s of the trench 300. . Specifically, the ratio of the area occupied by the sixth pores P6 of the inner wall of the trench 300 may be about 5% to 50%, or about 10% to 30% of the area of the inner wall to be inspected. .

Similarly, the surface skewness of the base surface 310s of the trench 300 may be greater than the surface skewness of the upper surface 210s of the base 210 and/or the surface skewness of the protrusion pattern 230 . The surface skewness of the upper surface 210s of the base 210 is based on the fourth pore P4, and the surface skewness of the protruding pattern 230 is the first pore P1, the second pore P2, and/or the second pore P4. It may be based on three pores (P3).

The depth D1 of the trench 300 may be smaller than the thickness of the base 210 , for example, the maximum thickness. Accordingly, the support layer 100 may not be visually recognized through the trench 300 and may be covered by the remaining pattern layer 202 . In this specification, the depth D1 of the trench 300 means the shortest vertical length from the reference plane, that is, the upper surface of the base 210 to the lowermost base surface of the trench 300 .

In some embodiments, the depth of the trench 300 , for example, the depth D1 of the radiation trench 310 may be greater than the maximum height of the protrusion pattern 230 . As will be described later, the trench 310 may contribute to the fluidity of the pattern layer 202 . Accordingly, it may be desirable for the trench 310 to have a sufficient depth in terms of fluidity of the pattern layer 202 and tracking of the substrate to be polished.

14 is a cross-sectional view of a polishing pad according to another embodiment of the present invention, and is a cross-sectional view showing the same position as in FIGS. 6 and 13 described above.

Referring to FIG. 14 , the polishing pad 13 according to the present embodiment is different from the above-described embodiment of FIG. 13 in that the upper surface of the support layer 103 is partially visible through the trench 313 .

The depth of the trench, eg, the radiation trench 313 , may be substantially equal to the thickness, eg, the maximum thickness, of the base 210 . Accordingly, the upper surface of the support layer 103 may be exposed through the trench 313 .

In the present embodiment, the trench including the radiation trench 313 and/or the concentric trenches (not shown) imparts a certain fluidity to the pattern layer 203 , and the protruding pattern 230 of the polishing pad 13 as described above. ) may follow the curve of the substrate to be polished. That is, the upper surface of the support layer 103 may be partially exposed by the trench 313 , and the base 210 of the pattern layer 203 may be physically separated and partitioned by being spaced apart from each other based on the radiation trench. Any one of the pattern layers 203 spaced apart from each other is the same as described above in that it has an approximately sectoral shape in plan view.

By the pressure in the third direction (Z) applied to the pattern layer 203 according to the base 210 separated and spaced apart from each other by being partitioned based on the radiation trench 313 on one support layer 103 and the like It is possible to have fluidity in the planar direction, and it is possible to more flexibly follow the vertical along the curved surface of the substrate to be polished.

Since the other first pores (P1) to the sixth pores (P6) have been described above, overlapping descriptions will be omitted.

15 is a cross-sectional view of a polishing pad according to another embodiment of the present invention, and is a cross-sectional view showing the same position as in FIGS. 6 and 13 described above.

Referring to FIG. 15 , the polishing pad 14 according to this embodiment is different from the embodiment of FIG. 14 described above in that the support layer 104 also has a partially recessed trench 414 .

In an exemplary embodiment, the patterned layer 204 may have a first trench 314 , and the support layer 104 may have a second trench 414 . A depth of the first trench 314 may be substantially equal to a thickness of the base 210 . A depth D2 of the second trench 414 may be smaller than a thickness of the support layer 104 .

The first trench 314 and the second trench 414 may be connected to each other while overlapping each other in the third direction Z. The first trenches 314 and the second trenches 414 may each include the aforementioned radial trenches and/or concentric trenches.

The support layer 104 may have a second trench 414 and provide a channel through which the slurry flows. In some embodiments, the inner wall of the second trench 414 of the support layer 104 may also have exposed pores. The pores exposed through the inner wall of the second trench 414 may be defined as the seventh pores P7 . The average diameter of the seventh pores P7 may be in the range of about 10 μm to 200 μm, or about 20 μm to 150 μm, or about 30 μm to 100 μm.

On the other hand, substantially no pores, a relatively small number, or a relatively small size of pores may exist on the base surface 414s of the second trench 414 . Although the present invention is not limited thereto, after disposing the patterned layer 204 with or without the first trench 314 on the support layer 104 , the second trench 414 of the support layer 104 is performed using a laser or the like. ), at least a portion of the pores may be melted or collapsed while the laser is irradiated to the base surface 414s of the second trench 414 .

For example, the surface skewness of the base surface 414s of the second trench 414 may be greater than the surface skewness formed by the seventh pores P7 of the inner wall of the second trench 414 . The surface skewness of the inner wall may have a negative value, and the surface skewness of the basal surface 414s may have a negative value, or 0 or a positive value. Accordingly, when the surface skewness of the inner wall is subtracted from the surface skewness of the base surface 414s, it may have a positive value of 0 or more.

For another example, the arrangement density of the seventh pores P7 positioned on the inner wall of the second trench 414 may be greater than the arrangement density of the pores positioned on the base surface 414s of the second trench 414 . Specifically, the ratio of the area occupied by the seventh pores P7 of the inner wall of the second trench 414 is about 10% to 60%, or about 20% to 50% of the area of the inner wall to be inspected. can

In some embodiments, the surface skewness of the basal surface 414s of the second trench 414 is the surface skewness of the patterned layer 204 , such as the surface skewness formed by the fourth pores P4 on the top surface of the base 210 , And/or the surface skewness formed by the first pores P1 to the third pores P3 of the surface of the protrusion pattern 230 may be greater than that of the surface. The surface skewness of the surface of the pattern layer 204 may have a negative value, and the surface skewness of the basal surface 414s may have a negative value, or 0 or a positive value.

The upper portion of the protruding pattern 230 forming the polishing surface is manufactured to have negative skewness, so that the portion of the protruding pattern 230 excluding the pores is flat. Characteristics can be improved for flat grinding. At the same time, by increasing the skewness of the second trench 414 in a relatively positive direction, the slurry flow is not stagnated by the pores too deep in the second trench 414, or residual abrasive particles and abrasive by-products do not stagnate in the deep pores. It can be configured to be easily removed.

Also in some embodiments, in the first trench 314 and the second trench 414 connected to each other, the surface roughness formed by the seventh pores P7 of the inner wall of the second trench 414 is, The surface roughness formed by the sixth pores P6 of the inner wall of the trench 314 may be greater than that of the trench 314 .

Compared to the second trench 414 having a relatively deep position, the shallow first trench 314 may have a relatively large effect on the slurry flow. Therefore, the flow of the slurry is stagnated by the sixth pores P6 of the first trench 314 or the residual abrasive particles and abrasive by-products in the deep pores do not stagnate and can be easily removed.

Since the other first pores (P1) to the sixth pores (P6) have been described above, overlapping descriptions will be omitted.

16 is a cross-sectional view of a polishing pad according to another embodiment of the present invention, and is a cross-sectional view showing the same position as in FIGS. 6 and 13 described above.

Referring to FIG. 16 , the polishing pad 15 according to the present embodiment is different from the embodiment of FIG. 15 described above in that the support layer 105 is penetrated by a trench.

The pattern layer 205 has a first trench 315 and the support layer 100 has a second trench 415 , and the first trench 315 and the second trench 415 are connected to each other by overlapping with each other as described above. same. In this embodiment, the second trench 415 may completely penetrate the support layer 105 . That is, the depth of the second trench 415 may be substantially the same as the thickness of the support layer 105 . Accordingly, other components (not shown) under the polishing pad 15 may be visually recognized through the trenches 315 and 415 .

Since the other first pores (P1) to the seventh pores (P7) have been described above, overlapping descriptions will be omitted.

Hereinafter, a method of manufacturing a polishing pad according to an embodiment of the present invention will be described.

17 is a schematic diagram illustrating a method of manufacturing a polishing pad according to an embodiment of the present invention. 18 is a schematic diagram illustrating a method of manufacturing a polishing pad according to another embodiment of the present invention.

First, referring to FIG. 17 , the method of manufacturing the polishing pad according to the present embodiment may include forming the pattern layer 200 on the support layer 100 . For example, the support layer 100 may be roll-to-roll transferred from the unwinding roll 1001 to a winding roll (not shown) in the form of a film. For this purpose, a plurality of transfer rolls 1002 may be appropriately used. The support layer 100 may be in a state in which pores of a predetermined size are formed.

A curable composition (S) may be applied on the transferred support layer 100 . The curable composition S may fill the recessed pattern of the pattern mold 1003 on the support layer 100 . The curable composition (S) may use the application unit 1005, but the present invention is not limited thereto.

Also, the curable composition (S) filled in the recessed pattern may be at least partially cured by the curing unit 1007 . The curing unit 1007 may be a light irradiation device or the like. A light irradiation apparatus may be suitably selected according to the curing conditions of the curable composition (S).

Accordingly, the pattern layer 200 may be formed on the support layer 100 . The polishing pad according to the present embodiment may directly form the pattern layer 200 on the support layer 100 . That is, in the process in which the first curable composition (S) is applied on the support layer 100 , the curable composition (S) may at least partially fill or penetrate the exposed pores of the support layer 100 .

Although not shown in the detailed drawings, the cured pattern layer 200 may have pores. Since the shape, structure, and other pores of the pattern layer 200 have been previously described, the overlapping description will be omitted. The size of the pores in the pattern layer 200 may be controlled using light irradiation conditions, for example, the amount of light irradiated, the wavelength of the light, the direction of the light, and the like. The size of the pores of the cured pattern layer 200 is smaller than the size of the pores of the support layer 100 as described above.

Next, referring to FIG. 18, in the method of manufacturing a polishing pad according to another embodiment of the present invention, the pattern layer 200 is formed by filling and curing the curable composition (S) in the recessed pattern of the pattern mold 1003, It may be prepared by disposing the prepared pattern layer 200 on the support layer. That is, unlike FIG. 17 in which the pattern layer is cured on the support layer, the pattern layer 200 may be disposed on the support layer after curing the cured pattern layer 200 .

18 illustrates a case in which the curable composition (S) is filled in the recessed pattern in the same manner as in the slit coating, but the present invention is not limited thereto. The pattern layer 200 cured by the curing unit 1007 may have pores P therein. The average diameter of the pores P may be in the range of about 5 μm to 50 μm, or about 10 μm to 45 μm, or about 15 μm to 40 μm, or about 20 μm to 35 μm.

Since the shape, structure, and other pores (P) of the pattern layer 200 have been previously described, overlapping descriptions will be omitted.

17 and 18, the step of forming the pattern layer 200, specifically filling the curable composition (S) and / or curing the curable composition (S) using the curing unit (1007) The step may be preferably performed under conditions of about 30% to 70% relative humidity, or about 40% to 70% relative humidity. When the curable composition (S) includes urethane, it may be easy to fill the curable composition (S) in a dent pattern having a fine size within the humidity range. Although the present invention is not limited thereto, if the pattern layer 200 is formed under a condition higher than the humidity range, the curable composition (S) may not be completely filled in the recessed pattern due to the surface tension of the pattern mold 1003, etc. can In this case, as described above, it may be difficult to achieve the intention of increasing the perimeter of the protrusion pattern using fine pores on the surface of the protrusion pattern of the pattern layer 200 , for example, the first pores P1 and the second pores P2 .

19 is a schematic cross-sectional view of the manufactured polishing pad. 20 is a schematic diagram illustrating a process of forming a trench in the polishing pad of FIG. 19 .

Referring further to FIG. 19 , the polishing pad manufactured according to FIG. 17 or 18 may include the pattern layer 200 disposed on the support layer 100 . The pattern layer 200 may include a base 210 and a protrusion pattern 230 . The pattern layer 200 includes the first pores P1 and the second pores P2 positioned on the upper surface of the protrusion pattern 230 , the third pores P3 positioned on the side surface of the protrusion pattern 230 , and the base. Having the fourth pore P4 positioned on the upper surface 210s of the 210 is the same as described above. Also, the support layer 100 may have fifth pores P5 .

Although not shown in the drawings, in another embodiment, the pattern mold used for manufacturing the pattern layer 200 further has a recessed pattern having a shape corresponding to the trench, and thus the cured pattern layer 200 has a trench (not shown). ) may be formed.

Then, further referring to FIG. 20 , the pattern layer 200 is at least partially removed using a laser L to form a first trench 314 in the pattern layer 200 . Also, the second trench 414 may be formed in the support layer 100 by at least partially removing the support layer 100 using the laser L.

The sixth pores P6 and the seventh pores P7 exposed during the formation of the trenches 314 and 414, and the surface of the pattern layer 200 and the inner wall of the first trench 314, the support layer 100 Since the surface roughness of the inner wall and the base surface of the second trench 414 has been previously described, the overlapping description will be omitted.

Hereinafter, the present invention will be described in more detail with reference to specific preparation examples, comparative examples and experimental examples.

Preparation Example 1: Preparation of a polishing pad having a protruding pattern

A protrusion pattern having an approximately 'x' shape in a plan view was formed. In this case, the area occupied by the protrusion pattern was made to be about 10.0% of the total area. The minimum width of the protrusion pattern was about 20 μm. The formation method of the protrusion pattern used laser processing. In addition, the pattern layer has porosity, the average particle size of the pores is 10㎛, the volume ratio of about 25% was used. In addition, various polishing pads were prepared by adjusting the pattern size to control the perimeter length.

Preparation Example 2: Preparation of a polishing pad having a protruding pattern

A polishing pad having the same shape as in Preparation Example 1 was manufactured, except that the minimum width of the protrusion pattern was formed to be about 60 μm. In addition, various polishing pads were prepared by adjusting the pattern size to control the perimeter length.

Preparation Example 3: Preparation of a polishing pad having a protruding pattern

A polishing pad having the same shape as in Preparation Example 2 was prepared except that pores having an average particle size of 20 μm and a volume ratio of about 40% were used. In addition, various polishing pads were prepared by adjusting the pattern size to control the perimeter length.

Preparation Example 4: Preparation of a polishing pad having a protruding pattern

A polishing pad having the same shape as in Preparation Example 2 was prepared, except that pores having an average particle size of 40 μm and a volume ratio of about 40% were used. In addition, various polishing pads were prepared by adjusting the pattern size to control the perimeter length.

Preparation Example 5: Preparation of a polishing pad having a protruding pattern

A polishing pad having the same shape as in Preparation Example 2 was prepared except that pores having an average particle size of 100 μm and a volume ratio of about 30% were used.

Preparation Example 6: Preparation of a polishing pad having a protruding pattern

A polishing pad having the same shape as in Preparation Example 2 was prepared except that pores having an average particle size of 200 μm and a volume ratio of about 20% were used.

Experimental Example 1: Polishing rate according to perimeter length per unit area

The effect of the perimeter length per unit area on the polishing rate characteristics was confirmed using the polishing pads according to Preparation Examples 1 to 4. ^{About 1mm/mm 2} , about 2mm/mm ² , about 3mm/mm ² , about 4mm/mm ² , about 5mm/mm ² , about 6mm by adjusting the size of the pattern while maintaining about 10% of the polishing area /mm ² , about 7mm/mm ² , about 8mm/mm ² , about 10mm/mm ² , about 15mm/mm ² , about 25mm/mm ² Various polishing pads having a peripheral length were prepared. At this time, the minimum width and pore conditions of the pattern maintained the conditions presented in Preparation Examples 1 to 4.

For the polishing experiment, an 8-inch oxide wafer and TSO-12 (Soulbrain), a slurry for oxide, were used. The apparent contact pressure was 150 g/cm ² . The apparent contact pressure (Pa) may be defined as a value obtained by dividing the total load applied to the substrate to be polished by the carrier by the area of the substrate to be polished. The rotation speed of the polishing pad was fixed at 61 rpm.

And the result is shown in FIG. Referring to FIG. 21 , it can be seen that the polishing rate increases as the perimeter length per unit area of the protruding pattern increases. However, it can be seen that the increase in the polishing rate is not linear, but gradually decreases and slows down as the circumferential length increases, and converges to a predetermined value. For example, it is expected that the polishing efficiency will converge within about 50 mm/mm ^{2 .}

Through this, it was confirmed that the polishing rate could be controlled according to the area ratio and the perimeter length.

In particular, comparing Preparation Examples 2 to 4, in which the minimum width of the protrusion pattern is about 60 μm, it can be seen that the polishing rate gradually increases even when the circumference length is the same as the average particle size of the pores increases. Comparing Preparation Example 1 with Preparation Examples 3 and 4, it can be seen that Preparation Examples 3 and 4 exhibit a higher polishing rate than Preparation Example 1 having a smaller minimum width of the protrusion pattern.

Experimental Example 2: Polishing rate according to pores

Using the polishing pads according to Preparation Examples 1 to 5, the effect of the average size of the pores on the characteristics on the polishing rate was confirmed. The circumferential length of the polishing pad was fixed to ^{15 mm/mm 2 .} As a comparative example, an IC1010 pad manufactured by Dow, a commercial polishing pad, was used.

The polishing conditions were with a, the polishing pressure and the rotational speed of the pad in one of 61rpm, 93rpm one of 150g / cm ² and 300g / cm ² was expressed by the product of the horizontal axis represents the rotation speed and pressure. And the results are shown in FIGS. 22 and 23 .

22 and 23 , it can be seen that the polishing rate increases as the size of the pores increases when the protrusion pattern has the same minimum width. In particular, comparing Preparation Example 1 and Preparation Example 3, Preparation Example 3 exhibited a high level of polishing rate despite having a larger minimum width. On the other hand, it was confirmed that the polishing efficiency of the polishing pads according to Preparation Examples 3 to 5 of the present invention further increased as the polishing conditions of the higher level, ie, the polishing rate and the polishing pressure, increased.

In the case of Preparation Example 6 in which the average particle size of pores was 200 μm, the pattern shape was collapsed due to pores, and it was difficult to maintain the polishing area at 10%. In addition, in the case of Preparation Example 6, the measured polishing rate was low, and damage to the polishing substrate was observed, so that it could be determined that polishing was not performed.

In the above, the embodiment of the present invention has been mainly described, but this is only an example and does not limit the present invention. It will be appreciated that various modifications and applications not exemplified above are possible.

Therefore, it should be understood that the scope of the present invention includes changes, equivalents or substitutes of the technical ideas exemplified above. For example, each component specifically shown in the embodiment of the present invention may be implemented by modification. And differences related to such modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

1: Polishing device
11: polishing pad
100: support layer
200: pattern layer
210: base
230: protrusion pattern

Claims (11)

support layer; and a pattern layer disposed on one surface of the support layer, the pattern layer including a base and a plurality of protruding patterns disposed on the base,
The base has a plurality of pores exposed on the upper surface, and a ratio of the area occupied by the pores of the base to a predetermined base inspection area is 10% to 40%. The method of claim 1,
The support layer has a plurality of pores exposed on one surface, and the base is at least partially filled in the pores of the support layer. The method of claim 1,
The support layer has a porosity, the porosity of the support layer is greater than the porosity of the pattern layer polishing pad. According to claim 1,
The base has a trench, and an inner wall and a base surface of the trench each have exposed pores. 5. The method of claim 4,
With respect to a predetermined inspection area, the surface skewness of the bottom surface of the trench of the base is greater than the surface skewness of the top surface of the base. According to claim 1,
The base has a first trench at least partially exposing the one surface of the support layer,
With respect to a predetermined inspection area, the surface skewness of one surface of the exposed support layer is greater than the surface skewness of the inner wall of the first trench. 7. The method of claim 6,
The support layer has a second trench connected to the trench of the base,
The surface roughness of the inner wall of the first trench is smaller than the surface roughness of the inner wall of the second trench. According to claim 1,
A polishing pad wherein the upper surface of the protruding pattern has pores contributing to an increase in the circumferential length in a plane, and the circumferential length of the polishing surface formed by the protruding pattern is in the range of ^{8.0 mm/mm 2} to 24.0 mm/mm ^{2 .} Forming a pattern layer disposed on the support layer, comprising the step of forming a pattern layer comprising a plurality of protruding patterns spaced apart from each other on a base,
A method of manufacturing a polishing pad wherein the ratio of the area occupied by the pores of the base to the predetermined base inspection area is 10% to 40%. 10. The method of claim 9,
The step of forming the pattern layer,
Filling the curable composition in the recessed pattern of the pattern mold, and
Comprising the step of curing the curable composition in the recessed pattern to form a porous protruding pattern,
Filling and curing the curable composition is a method of manufacturing a polishing pad performed under the conditions of 40% to 70% relative humidity. 11. The method of claim 10,
the support layer has exposed pores on its surface, and the curable composition at least partially fills the pores of the support layer;
The porosity of the support layer is greater than the porosity of the porous protrusion pattern manufacturing method of the polishing pad.

Images