CN104942697A - Wafer grinding head and wafer absorbing method - Google Patents
Wafer grinding head and wafer absorbing method Download PDFInfo
- Publication number
- CN104942697A CN104942697A CN201410110796.6A CN201410110796A CN104942697A CN 104942697 A CN104942697 A CN 104942697A CN 201410110796 A CN201410110796 A CN 201410110796A CN 104942697 A CN104942697 A CN 104942697A
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- Prior art keywords
- wafer
- district
- grinding
- head
- sensor
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
Abstract
The invention discloses a wafer grinding head. The lower surface of the wafer grinding head is flat for forming a wafer absorbing area, a first area, a second area, a third area, a periphery area and a wafer retaining ring are formed in the wafer absorbing area in sequence from inside to outside, the first area, the second area, the third area, the periphery area and the wafer retaining ring are concentric, when a wafer is absorbed, negative pressure is formed by the first area and the third area, positive pressure is formed by the second area and the periphery area, and after the absorption is completed, negative pressure is formed by the wafer retaining ring; a wafer sensor is arranged in the first area, the second area or the third area, the wafer sensor is installed in a hole formed in the wafer grinding head, the tail portion of the wafer sensor is connected to the wafer grinding head through a spring, and the elasticity coefficient of the spring can satisfy the requirements; the spring force formed by the spring is less than the crushing stress on the surface of the wafer. The invention further discloses a wafer absorbing method.
Description
Technical field
The present invention relates to IC manufacturing field, more particularly, relate to the apparatus and method drawing wafer.
Background technology
Carrying out polishing to wafer is conventional steps in semiconductor technology, when carrying out polishing to wafer, first by manipulator, wafer is placed on wafer carrying platform, and then wafer is adsorbed onto on grinding head from wafer carrying platform, grinding head extracting vacuum can produce negative pressure, thus adsorbing wafer, grinding head carries wafer and grinds together afterwards.
But wafer is adsorbed in the process of grinding head from wafer carrying platform, due to the existence of air pressure or other mechanical pressures, the surface of wafer can pressure-bearing.When wafer carrying platform exists irrational mix, such as the middle part of wafer carrying platform is too much recessed, reaches about 5mm; Or grinding head exists irrational mix, such as wafer sensor protrusion is more, spring is comparatively hard, and the pressure distribution on grinding head is improper, and wafer all can be caused due to stressed and broken.The fragmentation of wafer will cause very large economic loss, especially for the TSV(through silicon vias with high-aspect-ratio) wafer, the loss of wafer fragmentation is very serious.
Summary of the invention
The present invention is intended to propose a kind of grinding wafer head and the absorbing process that can reduce the broken probability of wafer.
According to one embodiment of the invention, a kind of grinding wafer head is proposed, grinding wafer head is rounded, the lower surface of grinding wafer head is smooth, form wafer adsorption district, wafer adsorption district forms the firstth district from the inside to the outside successively, secondth district, 3rd district, external zones and wafer retaining ring, firstth district is circular, secondth district, 3rd district, external zones and wafer retaining ring are annulars, firstth district, secondth district, 3rd district, external zones and wafer retaining ring concentric, when adsorbing wafer, firstth district and the 3rd district form negative pressure, secondth district and external zones form malleation, after having adsorbed, wafer retaining ring forms negative pressure,
Wafer sensor is furnished with in the firstth district, the secondth district or the 3rd district, wafer sensor is arranged in the hole be formed in grinding wafer head, the afterbody of wafer sensor is connected to grinding wafer head by spring, the end of wafer sensor extends beyond the lower surface of described grinding wafer head when not adsorbing wafer, when wafer adsorption completes, wafer sensor pushes back in described hole by adsorbed wafer, and wherein the coefficient of elasticity of spring meets: the spring force that spring is formed is less than the crushing stress of crystal column surface.
In one embodiment, external zones comprises the 4th district and the 5th district of annular concentric further, and the 4th district is positioned at inner side, and the 5th district is positioned at outside.
In one embodiment, wafer sensor is arranged in the secondth district, and the end of wafer sensor extends beyond the lower surface of described grinding wafer head distance when not adsorbing wafer is not more than 1.5mm.
In one embodiment, during absorption wafer, the negative pressure that the firstth district and the 3rd district are formed is-0.2 ~-1.8psi, and the malleation that the secondth district is formed is 0.05 ~ 0.2psi, and the malleation that external zones is formed is 0.1 ~ 0.5psi.
In one embodiment, grinding wafer head adsorbs wafer from a wafer carrying platform, and wafer carrying platform is recessed gradually to center by edge, and recessed distance is no more than 2mm.
In one embodiment, the flexible material layer of the surface coverage of wafer carrying platform and wafer contacts.
According to one embodiment of the invention, a kind of wafer adsorption method is proposed, a circular wafers grinding head is used to adsorb wafer from a wafer carrying platform, wherein the lower surface of this grinding wafer head is smooth, form wafer adsorption district, wafer adsorption district forms the firstth district from the inside to the outside successively, secondth district, 3rd district, external zones and wafer retaining ring, firstth district is circular, secondth district, 3rd district, external zones and wafer retaining ring are annulars, firstth district, secondth district, 3rd district, external zones and wafer retaining ring concentric, in the firstth district, wafer sensor is furnished with in secondth district or the 3rd district, wafer sensor is arranged in the hole be formed in grinding wafer head, the afterbody of wafer sensor is connected to grinding wafer head by spring, the end of wafer sensor extends beyond the lower surface of described grinding wafer head when not adsorbing wafer, this wafer adsorption method comprises:
Grinding wafer head to move to above wafer carrying platform and declines;
External zones forms malleation;
Firstth district and the 3rd district form negative pressure, and the secondth district forms malleation, monitor wafer sensor simultaneously and whether detect wafer;
Wafer sensor detects wafer, and external zones forms normal pressure, and wafer retaining ring forms negative pressure;
Absorption completes, and grinding wafer head carries wafer rising and leaves wafer carrying platform.
In one embodiment, the negative pressure that the firstth district and the 3rd district are formed is-0.2 ~-1.8psi, and the malleation that the secondth district is formed is 0.05 ~ 0.2psi, and the malleation that external zones is formed is 0.1 ~ 0.5psi.
In one embodiment, external zones comprises the 4th district and the 5th district of annular concentric further, and the 4th district is positioned at inner side, and the 5th district is positioned at outside.Wafer sensor is arranged in the secondth district, and the end of wafer sensor extends beyond the lower surface of grinding wafer head distance when not adsorbing wafer is not more than 1.5mm.
In one embodiment, wafer carrying platform is recessed gradually to center by edge, and recessed distance is no more than 2mm, the flexible material layer of surface coverage of wafer carrying platform and wafer contacts.
Grinding wafer head of the present invention and wafer adsorption method make the structure of wafer carrying platform, grinding wafer head more reasonable, and the power that when wafer is adsorbed, surface is born reduces, and reduce wafer and broken probability occurs.
Accompanying drawing explanation
The above and other feature of the present invention, character and advantage are by more obvious by what become below in conjunction with the description of drawings and Examples, and Reference numeral identical in the accompanying drawings represents identical feature all the time, wherein:
Fig. 1 discloses the face upwarding assumption diagram of the grinding wafer head according to one embodiment of the invention.
Fig. 2 discloses the schematic diagram adsorbing wafer according to the grinding wafer head of one embodiment of the invention from wafer carrying platform.
Fig. 3 discloses the flow chart of the wafer adsorption method according to one embodiment of the invention.
Detailed description of the invention
Shown in figure 1, present invention is disclosed a kind of grinding wafer head 100, grinding wafer head is rounded.The lower surface of grinding wafer head is smooth, and form wafer adsorption district, this lower surface is also referred to as datum level.Wafer adsorption district forms the first district 102 of district 101, second, the 3rd district 103, external zones and wafer retaining ring 106 from the inside to the outside successively.First district 101 is circular, and the second district 102, the 3rd district 103, external zones and wafer retaining ring 106 are annulars.First district 102 of district 101, second, the 3rd district 103, external zones and wafer retaining ring 106 are concentric.In the illustrated embodiment in which, external zones comprises the 4th district 104 of annular concentric and the 5th district 104 of district the 105, four further and is positioned at inner side, and the 5th district 105 is positioned at outside.Distinguish the 4th district 104 and the 5th district 105 and more accurately can carry out Stress control to grinding head, but in most of the cases, the 4th district 104 and the 5th district 105 can be taken as a district, and namely external zones processes.When adsorbing wafer, the first district 101 and the 3rd district 103 form negative pressure, and the second district 102 and external zones (i.e. the 4th district 104 and the 5th district 105) form malleation.In one embodiment, the pressure in each district is set to following value: during absorption wafer, and the negative pressure that the first district 101 and the 3rd district 103 are formed is-0.2 ~-1.8psi.The malleation that secondth district is formed is 0.05 ~ 0.2psi.The malleation that external zones is formed is 0.1 ~ 0.5psi.After absorption completes, wafer retaining ring 106 forms negative pressure, and negative pressure standard of extracting vacuum in prior art that wafer retaining ring 106 is formed is consistent.
Wafer sensor 108 is furnished with in the firstth district, the secondth district or the 3rd district.Wafer sensor 108 is arranged on (hole is not shown) in the hole be formed in grinding wafer head 100.The afterbody of wafer sensor 108 is connected to grinding wafer head 100 by spring, i.e. the inside bottom in hole.The end of wafer sensor 108 extends beyond the lower surface of grinding wafer head when not adsorbing wafer, namely described datum level.When wafer adsorption completes, wafer sensor is pushed back in hole by adsorbed wafer, because the afterbody of wafer sensor 108 has spring, therefore pushes back in the process in hole at wafer by wafer sensor 108, and the surface of wafer sensor 108 pairs of wafers produces pressure.This pressure may cause wafer broken, and therefore the coefficient of elasticity of spring needs to meet following standard: the spring force that spring is formed is less than the crushing stress of crystal column surface.In other words, spring-force driven dual on wafer sensor, and then can not make crystal column surface broken at the pressure that crystal column surface produces.Because the crushing stress of crystal column surface may be different, therefore the coefficient of elasticity of spring is corresponding to the crushing stress of crystal column surface.In the illustrated embodiment in which, wafer sensor 108 is disposed in the second district 102.The reason being arranged on the secondth district is that this malleation is conducive to offsetting a part of wafer sensor 108 pairs of crystal column surface applied pressures, can reduce the probability of wafer breakage further because the second district 102 produces malleation in the process of absorption wafer.In one embodiment, the end of wafer sensor 108 extends beyond the lower surface of grinding wafer head when not adsorbing wafer, namely the distance of datum level is not more than 1.5mm.
Shown in figure 2, Fig. 2 discloses the schematic diagram adsorbing wafer 110 according to the grinding wafer head of one embodiment of the invention from wafer carrying platform.As shown in the figure, basic structure and the wafer carrying platform of the prior art of wafer carrying platform 109 of the present invention are similar, be also recessed gradually to center by edge, but the recessed distance of wafer carrying platform 109 of the present invention are significantly reduced.In one embodiment, the recessed distance of wafer cushion cap 109 is no more than 2mm, and namely the centre of wafer carrying platform 109 is maximum is recessedly no more than 2mm.Meanwhile, wafer carrying platform 109 of the present invention with the surface of wafer contacts are also coated with elastomeric layer.By above-mentioned design, wafer 110 can be made less and more even by the power that is subject in the process of adsorbing, reduce the probability of wafer fragmentation.
Shown in figure 3, present invention further teaches a kind of wafer adsorption method, use a circular wafers grinding head to adsorb wafer from a wafer carrying platform, wherein this grinding wafer head and wafer carrying platform are grinding wafer head as shown in Figures 1 and 2 and wafer carrying platform.The lower surface of grinding wafer head is smooth, form wafer adsorption district, wafer adsorption district forms the firstth district, the secondth district, the 3rd district, external zones and wafer retaining ring from the inside to the outside successively, described firstth district is circular, secondth district, the 3rd district, external zones and wafer retaining ring are annulars, and the firstth district, the secondth district, the 3rd district, external zones and wafer retaining ring are concentric.In one embodiment, external zones comprises the 4th district and the 5th district of annular concentric further, and the 4th district is positioned at inner side, and the 5th district is positioned at outside.Wafer sensor is furnished with in the firstth district, the secondth district or the 3rd district, wafer sensor is arranged in the hole be formed in grinding wafer head, the afterbody of wafer sensor is connected to grinding wafer head by spring, and the end of wafer sensor extends beyond the lower surface of grinding wafer head when not adsorbing wafer.In one embodiment, wafer sensor is arranged in the secondth district, and the end of wafer sensor extends beyond the lower surface of described grinding wafer head distance when not adsorbing wafer is not more than 1.5mm.In one embodiment, wafer carrying platform is recessed gradually to center by edge, and recessed distance is no more than 2mm, and the flexible material layer of the surface coverage of wafer carrying platform and wafer contacts.
This wafer adsorption method comprises:
202. grinding wafer heads to move to above wafer carrying platform and decline.
204. external zones form malleation.In one embodiment, the malleation that external zones (comprising the 4th district and the 5th district) is formed is 0.1 ~ 0.5psi.
206. first districts and the 3rd district form negative pressure, and the secondth district forms malleation, monitor wafer sensor simultaneously and whether detect wafer.In one embodiment, the negative pressure that the firstth district and the 3rd district are formed is-0.2 ~-1.8psi, and the malleation that the secondth district is formed is 0.05 ~ 0.2psi.Whether whether wafer sensor detects wafer is be set back according to wafer sensor in the hole on grinding wafer head to judge.If wafer sensor is set back in the hole on wafer reach predetermined standard, then think that wafer sensor detects wafer.
208. wafer sensors detect wafer, and external zones (comprising the 4th district and the 5th district) passes into atmospheric pressure to form normal pressure, and wafer retaining ring forms negative pressure simultaneously.The negative pressure that wafer retaining ring is formed is consistent with the standard of extracting vacuum in prior art.
210. have adsorbed, and grinding wafer head carries wafer rising and leaves wafer carrying platform.
Grinding wafer head of the present invention and wafer adsorption method make the structure of wafer carrying platform, grinding wafer head more reasonable, and the power that when wafer is adsorbed, surface is born reduces, and reduce wafer and broken probability occurs.
Above-described embodiment is available to be familiar with person in the art to realize or to use of the present invention; those skilled in the art can make various modifications or change to above-described embodiment and not depart from invention thought of the present invention; thus protection scope of the present invention not limit by above-described embodiment, and should be the maximum magnitude meeting the inventive features that claims are mentioned.
Claims (10)
1. a grinding wafer head, is characterized in that, grinding wafer head is rounded,
The lower surface of grinding wafer head is smooth, form wafer adsorption district, described wafer adsorption district forms the firstth district, the secondth district, the 3rd district, external zones and wafer retaining ring from the inside to the outside successively, described firstth district is circular, secondth district, the 3rd district, external zones and wafer retaining ring are annulars, firstth district, the secondth district, the 3rd district, external zones and wafer retaining ring are concentric, when adsorbing wafer, firstth district and the 3rd district form negative pressure, secondth district and external zones form malleation, after having adsorbed, wafer retaining ring forms negative pressure;
Wafer sensor is furnished with in the firstth district, the secondth district or the 3rd district, wafer sensor is arranged in the hole be formed in grinding wafer head, the afterbody of wafer sensor is connected to grinding wafer head by spring, the end of wafer sensor extends beyond the lower surface of described grinding wafer head when not adsorbing wafer, when wafer adsorption completes, wafer sensor pushes back in described hole by adsorbed wafer, and the coefficient of elasticity of wherein said spring meets: the spring force that described spring is formed is less than the crushing stress of crystal column surface.
2. grinding wafer head as claimed in claim 1, it is characterized in that, described external zones comprises the 4th district and the 5th district of annular concentric further, and the 4th district is positioned at inner side, and the 5th district is positioned at outside.
3. grinding wafer head as claimed in claim 1, it is characterized in that, described wafer sensor is arranged in the secondth district, and the end of wafer sensor extends beyond the lower surface of described grinding wafer head distance when not adsorbing wafer is not more than 1.5mm.
4. grinding wafer head as claimed in claim 1, it is characterized in that, during absorption wafer, the negative pressure that described firstth district and the 3rd district are formed is-0.2 ~-1.8psi, the malleation that described secondth district is formed is 0.05 ~ 0.2psi, and the malleation that described external zones is formed is 0.1 ~ 0.5psi.
5. grinding wafer head as claimed in claim 1, it is characterized in that, described grinding wafer head adsorbs wafer from a wafer carrying platform, and described wafer carrying platform is recessed gradually to center by edge, and recessed distance is no more than 2mm.
6. grinding wafer head as claimed in claim 5, is characterized in that, the flexible material layer of surface coverage of described wafer carrying platform and wafer contacts.
7. a wafer adsorption method, it is characterized in that, a circular wafers grinding head is used to adsorb wafer from a wafer carrying platform, wherein the lower surface of this grinding wafer head is smooth, form wafer adsorption district, described wafer adsorption district forms the firstth district from the inside to the outside successively, secondth district, 3rd district, external zones and wafer retaining ring, described firstth district is circular, secondth district, 3rd district, external zones and wafer retaining ring are annulars, firstth district, secondth district, 3rd district, external zones and wafer retaining ring concentric, in the firstth district, wafer sensor is furnished with in secondth district or the 3rd district, wafer sensor is arranged in the hole be formed in grinding wafer head, the afterbody of wafer sensor is connected to grinding wafer head by spring, the end of wafer sensor extends beyond the lower surface of described grinding wafer head when not adsorbing wafer, described wafer adsorption method comprises:
Grinding wafer head to move to above wafer carrying platform and declines;
External zones forms malleation;
Firstth district and the 3rd district form negative pressure, and the secondth district forms malleation, monitor wafer sensor simultaneously and whether detect wafer;
Wafer sensor detects wafer, and external zones forms normal pressure, and wafer retaining ring forms negative pressure;
Absorption completes, and grinding wafer head carries wafer rising and leaves wafer carrying platform.
8. wafer adsorption method as claimed in claim 7, is characterized in that, the negative pressure that described firstth district and the 3rd district are formed is-0.2 ~-1.8psi, and the malleation that described secondth district is formed is 0.05 ~ 0.2psi, and the malleation that described external zones is formed is 0.1 ~ 0.5psi.
9. wafer adsorption method as claimed in claim 7, it is characterized in that, described external zones comprises the 4th district and the 5th district of annular concentric further, and the 4th district is positioned at inner side, and the 5th district is positioned at outside;
Described wafer sensor is arranged in the secondth district, and the end of wafer sensor extends beyond the lower surface of described grinding wafer head distance when not adsorbing wafer is not more than 1.5mm.
10. wafer adsorption method as claimed in claim 7, it is characterized in that, described wafer carrying platform is recessed gradually to center by edge, and recessed distance is no more than 2mm, the flexible material layer of surface coverage of described wafer carrying platform and wafer contacts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410110796.6A CN104942697B (en) | 2014-03-24 | 2014-03-24 | Grinding wafer head and wafer adsorption method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410110796.6A CN104942697B (en) | 2014-03-24 | 2014-03-24 | Grinding wafer head and wafer adsorption method |
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| CN104942697A true CN104942697A (en) | 2015-09-30 |
| CN104942697B CN104942697B (en) | 2019-02-19 |
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Cited By (2)
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| CN106684025A (en) * | 2016-12-23 | 2017-05-17 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer positioning device |
| CN108500825A (en) * | 2018-05-16 | 2018-09-07 | 福建北电新材料科技有限公司 | A kind of method and apparatus of silicon carbide wafer polishing temperature control |
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| CN104942697B (en) | 2019-02-19 |
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Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Patentee after: Shengmei semiconductor equipment (Shanghai) Co., Ltd Address before: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Cailun Road No. fourth 1690 Patentee before: ACM (SHANGHAI) Inc. |
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