CN108511312B - Wafer bonding plasma processing device - Google Patents
Wafer bonding plasma processing device Download PDFInfo
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- CN108511312B CN108511312B CN201810270841.2A CN201810270841A CN108511312B CN 108511312 B CN108511312 B CN 108511312B CN 201810270841 A CN201810270841 A CN 201810270841A CN 108511312 B CN108511312 B CN 108511312B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
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- Condensed Matter Physics & Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer bonding plasma processing device. The wafer bonding plasma processing device comprises a lower electrode for placing a wafer and a focusing unit; the focusing unit is arranged around the periphery of the lower electrode, and the inner diameter of the side wall of the focusing unit is gradually reduced from the top to the bottom along the direction perpendicular to the lower electrode. The invention effectively prevents the position offset of the wafer in the cavity of the wafer bonding plasma processing device and ensures the normal and stable operation of the wafer plasma surface activation process.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer bonding plasma processing device.
Background
In the wafer bonding process, the initial bonding is realized by the intermolecular force between two wafers when the bonding step is just finished, and the final bonding can be realized after the subsequent annealing treatment. The plasma surface activation process on the wafer surface has very important influence on the bonding force after wafer bonding, and directly determines the stability after wafer bonding. Once a problem occurs in the plasma surface activation process of the wafer surface, the subsequent process is directly affected, for example, bubbles may occur at the bonding interface; alternatively, since a part of the surface of the wafer is not activated, the laminated wafer may be peeled off or chipped in a subsequent CMP (Chemical-Mechanical Polishing) process, which brings economic loss to a wafer manufacturer and indirectly increases the production cost of the wafer.
The prior art of performing the surface activation process of the wafer bonding plasma is performed in a wafer bonding plasma processing apparatus, which generally includes an upper electrode and a lower electrode disposed opposite to each other, a gas pipeline, a chuck, a focus ring, and related sensors, and the like, and the structure of the plasma processing apparatus determines the processing effect of the surface activation process of the plasma during the wafer bonding process.
In the process of activating the plasma surface of the wafer, the wafer is firstly placed in a cavity of a wafer bonding plasma processing device, so that an upper electrode is pressurized, a lower electrode is grounded, the plasma is generated through high-frequency voltage, and the bombardment on the surface of the wafer is realized through low-frequency voltage. Ideally, the plasma activated treatment of the wafer surface should be the same; however, in practical situations, there is a certain difference in the surface activation of the wafers, and this difference directly results in different bonding forces between wafers in different regions after wafer bonding. Meanwhile, due to the structure of the wafer bonding plasma cavity or the defects of the original design, certain process risks exist. Fig. 1A to 1C are schematic structural views illustrating a situation that may occur when a wafer is placed inside a wafer bonding plasma processing apparatus in the related art, and fig. 2A to 2C are schematic structural views illustrating a problem that may occur in a chuck inside the wafer bonding plasma processing apparatus in the related art during carrying of the wafer. In summary, there are three drawbacks:
(1) as shown in fig. 1A, after the wafer 104 enters between the upper electrode 101 and the lower electrode 102 in the chamber 10, the wafer may be placed at a wrong position as shown in fig. 1A, which causes a difference in different areas of the wafer surface in the plasma surface activation process and affects the bonding force between the wafers during the wafer bonding process. Wherein the lower electrode 102 is grounded through the support post 103.
(2) As shown in fig. 1B and 1C, in order to ensure that the wafer can be placed in a central position between the upper and lower electrodes, an annular Focus Ring (Focus Ring)111 is provided at the periphery of the lower electrode 102, but it increases additional risks such as wafer tilt shown in the dashed circle of fig. 1B, and wafer 104 rubbing against the sidewall of the Focus Ring 111 shown in the dashed circle of fig. 1C.
(3) Before the wafer is placed in the chamber in the conventional plasma processing apparatus, the Inner Chuck (Inner Chuck)20 is protruded upward, as shown in fig. 2A; the wafer 21 is then placed on the inner chuck 20, as shown in fig. 2B; finally, the inner chuck 20 is lowered until the wafer is seated on the lower electrode surface. Since there is no structure for fixing the wafer 21 on the inner chuck 20, during the lowering of the inner chuck 20, since the wafer 21 is not fixed, the position thereof may slip, causing the position where the wafer finally sits on the lower electrode to deviate from the center position of the lower electrode, as shown in fig. 2C, thereby affecting the normal operation of the surface activation process.
Therefore, how to ensure that the wafer is accurately placed in the cavity of the wafer bonding plasma processing apparatus, and ensure that the plasma surface activation process is performed normally and stably, is a technical problem to be solved at present.
Disclosure of Invention
The invention provides a wafer bonding plasma processing device, which is used for solving the problem that a wafer placed in a cavity of the wafer bonding plasma processing device is easy to have position deviation in the prior art and ensuring that the surface activation process of the wafer plasma is normally and stably carried out.
In order to solve the above problem, the present invention provides a wafer bonding plasma processing apparatus, including a lower electrode for placing a wafer, further including: and the focusing unit is arranged around the periphery of the lower electrode, and the inner diameter of the side wall of the focusing unit is gradually reduced from the top to the bottom along the direction vertical to the lower electrode.
Preferably, a cross section of the focusing unit in a direction parallel to the lower electrode has a circular ring shape.
Preferably, a cross section of the focusing unit in a direction parallel to the lower electrode is a circumscribed polygon of the wafer.
Preferably, a bevel angle is arranged on one side of the focusing unit facing the lower electrode, and the inclination angle of the bevel angle relative to the plane of the lower electrode is 10-80 °.
Preferably, the wafer transfer device further comprises an internal chuck for transferring the wafer to the surface of the lower electrode, wherein the bearing surface of the internal chuck for bearing the wafer is provided with at least one adsorption hole, and the adsorption hole is used for adsorbing the wafer so as to fix the wafer on the surface of the internal chuck.
Preferably, the at least one suction hole includes a plurality of suction holes, and the plurality of suction holes are symmetrically arranged with respect to an axial direction of the inner chuck.
Preferably, a plurality of the adsorption holes constitute a plurality of adsorption bands, each adsorption band includes a plurality of adsorption holes that are linear arrangement, and a plurality of adsorption bands about the inside chuck the bearing surface is central symmetry distribution.
Preferably, the plurality of absorbent strips comprises 8 absorbent strips.
Preferably, the device further comprises a detector and a controller; the detector is connected with the controller and used for detecting the adsorption pressure value between the wafer and the internal chuck and transmitting the adsorption pressure value to the controller; and the controller is used for judging whether the adsorption pressure value is within a preset range, and if not, sending an alarm signal.
According to the wafer bonding plasma processing device provided by the invention, the distance between the wafer and the edge of the opening side of the focusing unit is increased by arranging the focusing unit of which the inner diameter of the side wall is gradually reduced from the top to the bottom along the direction vertical to the lower electrode, and more space is reserved for placing the wafer, so that the wafer is prevented from being scratched or collided with the focusing unit in the process of falling to the surface of the lower electrode on one hand, and the wafer is prevented from inclining on the focusing unit on the other hand, therefore, the position deviation of the wafer in the cavity of the plasma processing device is effectively prevented, and the normal and stable operation of a wafer plasma surface activation process is ensured.
Drawings
FIGS. 1A-1C are schematic diagrams of a wafer bonding plasma processing apparatus according to the prior art, wherein the wafer bonding plasma processing apparatus is configured to accommodate a wafer;
FIGS. 2A-2C are schematic diagrams illustrating a chuck of a wafer bonding plasma processing apparatus according to the prior art, which is configured to support a wafer;
FIG. 3 is a schematic perspective view of a wafer bonding plasma processing apparatus according to an embodiment of the present invention;
FIG. 4A is a schematic view of a wafer not being lowered to the surface of the lower electrode in accordance with one embodiment of the present invention;
FIG. 4B is a schematic view of a wafer as it lands on the surface of a lower electrode in accordance with an embodiment of the present invention;
fig. 5 is a schematic view of the structure of an internal chuck in accordance with an embodiment of the present invention.
Detailed Description
The following describes an embodiment of a wafer bonding plasma processing apparatus according to the present invention in detail with reference to the accompanying drawings.
Fig. 3 is a schematic perspective view of a wafer bonding plasma processing apparatus according to an embodiment of the present invention, fig. 4A is a schematic structural view of a wafer not falling onto a surface of a lower electrode according to an embodiment of the present invention, and fig. 4B is a schematic structural view of a wafer falling onto a surface of a lower electrode according to an embodiment of the present invention.
As shown in fig. 3, 4A and 4B, the wafer bonding plasma processing apparatus according to the present embodiment includes a lower electrode 32 for placing a wafer 40. When the wafer 40 is subjected to the plasma surface activation process, the wafer 40 needs to be placed in the cavity 30, specifically, the wafer 40 is placed on the surface of the lower electrode 32 facing the upper electrode (not shown) in the cavity 30; then, the upper electrode is pressurized, the lower electrode 32 is grounded, plasma is generated by high-frequency voltage, and bombardment on the surface of the wafer 40 is realized by low-frequency voltage. In order to ensure that the wafer 40 is accurately placed on the surface of the lower electrode 32, the plasma processing apparatus according to the present embodiment further includes a focusing unit 31. The focusing unit 31 is disposed around the outer circumference of the lower electrode 32, and the inner diameter of the sidewall thereof is gradually reduced from the top to the bottom in a direction perpendicular to the lower electrode 32. The focusing unit 31 is used for defining the position of the wafer 40 on the surface of the lower electrode 32. The focusing unit 31 provided in this embodiment gradually decreases the inner diameter of the sidewall thereof from the top to the bottom in the direction perpendicular to the lower electrode 32, so that the distance between the edge of the opening side of the focusing unit 31 and the edge of the wafer 40 increases.
The specific shape of the focusing unit 31 may be set by a person skilled in the art according to actual needs, as long as the opening area surrounded by the focusing unit 31 can accommodate the wafer 40. In order to simplify the manufacturing process and facilitate the position of the wafer on the surface of the lower electrode to be defined, it is preferable that the cross section of the focusing unit 31 in the direction parallel to the lower electrode 32 is a circular ring shape. Alternatively, it is preferable that a cross-section of the focusing unit 31 in a direction parallel to the lower electrode 32 is a circumscribed polygon of the wafer 40.
Specifically, a side of the focusing unit 31 facing the lower electrode 32 is provided with a chamfer 311, and an inclination angle α of the chamfer 311 relative to a plane of the lower electrode 32 is 10-80 °.
In the prior art, a focusing unit is not arranged in a part of wafer bonding plasma processing devices, and the wafer placement position is easy to deviate from the central position, so that part of the area of the wafer surface is not activated in the plasma surface processing process; in the prior art, even though the focus ring is arranged in the wafer bonding plasma processing device, the focus ring is in a shape with the same width of the upper surface and the lower surface, and after the wafer enters the cavity, the distance between the edge of the wafer and the edge of the opening of the focus ring is only about 1mm, so that the edge of the wafer is easy to collide or scratch with the focus ring, and the smooth proceeding of the plasma surface activation process is not facilitated. In this embodiment, the focusing unit 31 is disposed to prevent the wafer 40 from being misaligned in the chamber 30; and the inner diameter of the sidewall of the focusing unit 31 is gradually reduced from the top to the bottom along the direction perpendicular to the lower electrode 32, that is, the width of the upper surface of the focusing unit 31 is smaller than that of the lower surface, so that the distance between the edge of the wafer 40 and the edge of the opening side of the focusing unit 31 is increased, and in the process that the wafer 40 falls to the surface of the lower electrode 32: on one hand, the focusing unit will not collide with or scratch the upper surface of the focusing unit 31; on the other hand, the wafer 40 is not tilted on the focusing unit 31; moreover, the width of the lower surface of the focusing unit 31 is greater than that of the upper surface, so that the wafer 40 can be limited to the center position of the lower electrode 32, and the position deviation of the wafer 40 can be effectively avoided. Wherein an upper surface of the focusing unit 31 is a surface facing the upper electrode, and a lower surface of the focusing unit 31 is a surface opposite to the upper surface.
Fig. 5 is a schematic view of the structure of an internal chuck in accordance with an embodiment of the present invention. In order to stably fix the wafer and prevent the wafer from slipping off during the process of falling to the lower electrode, preferably, as shown in fig. 3 and 5, the wafer bonding plasma processing apparatus provided in this embodiment further includes an internal chuck 33 for transferring the wafer 40 to the surface of the lower electrode 32, a carrying surface 331 of the internal chuck 33 for carrying the wafer 40 is provided with at least one suction hole 332, and the suction hole 332 is used for sucking the wafer 40 to fix the wafer 40 to the surface of the internal chuck 33. Before the wafer 40 is placed in the chamber 30, the inner chuck 33 protrudes upward from the lower electrode 32; after the wafer 40 is placed on the carrying surface 331 of the inner chuck 33, the inner chuck 33 starts to descend until the wafer 40 is seated on the surface of the lower electrode 32. Through set up at least one absorption hole 332 in the bearing surface 331, utilize the vacuum adsorption effect will the firm absorption of wafer 40 is in the surface of inside chuck 33 avoids the in-process that inside chuck 33 descends because vibrations or air current effect take place the slip of wafer, has prevented the skew of wafer position, has further ensured that the wafer is located the central point on lower electrode 32 surface puts.
In order to enhance the fixing effect of the inner chuck to the wafer, it is preferable that the at least one suction hole 332 includes a plurality of suction holes 332, and the plurality of suction holes 332 are symmetrically disposed about the axial direction of the inner chuck 33. More preferably, the plurality of suction holes form a plurality of suction bands, each suction band includes a plurality of suction holes arranged linearly, and the plurality of suction bands are distributed in a central symmetry manner with respect to the carrying surface 331 of the inner chuck 33. More preferably, the plurality of absorbent strips comprises 8 absorbent strips. Thus, the suction force applied to the wafer 40 by the internal chuck 33 is uniformly distributed on the surface of the wafer 40, and the fixing effect of the internal chuck 33 on the wafer 40 is further enhanced, so that the wafer is better prevented from shifting.
In order to enable a user to find a problem in time, it is preferable that the wafer bonding plasma processing apparatus provided in this embodiment further includes a detector and a controller; the detector is connected with the controller and is used for detecting the adsorption pressure value between the wafer 40 and the internal chuck 33 and transmitting the adsorption pressure value to the controller; and the controller is used for judging whether the adsorption pressure value is within a preset range, and if not, sending an alarm signal. Therefore, once the wafer 40 slips on the internal chuck 33, the magnitude of the adsorption pressure between the internal chuck 33 and the wafer 40 changes, and the relative position between the wafer and the internal chuck 33 can be accurately judged by detecting the magnitude of the adsorption pressure in real time, so that a user can find problems in time and take measures quickly, thereby avoiding causing excessive influence on a manufacturing process and reducing loss as much as possible.
The wafer bonding plasma processing device provided by the embodiment of the invention increases the distance between the edge of the wafer and the edge of the opening side of the focusing unit by setting the focusing unit with the inner diameter of the side wall gradually decreasing from the top to the bottom in the direction perpendicular to the lower electrode, and more space is reserved for placing the wafer, so that the wafer is prevented from being scratched or collided with the focusing unit in the process of falling to the surface of the lower electrode, and the wafer is prevented from inclining to the focusing unit, thereby effectively preventing the position offset of the wafer in the cavity of the wafer bonding plasma processing device, and ensuring the normal and stable performance of the wafer plasma surface activation process.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (8)
1. A wafer bonding plasma processing apparatus including a lower electrode for placing a wafer, characterized by further comprising:
the inner chuck is used for transferring the wafer to the center of the surface of the lower electrode, the bearing surface of the inner chuck, which is used for bearing the wafer, is provided with at least one adsorption hole, and the adsorption hole is used for adsorbing the wafer so as to fix the wafer on the surface of the inner chuck;
the focusing unit is arranged around the periphery of the lower electrode, and the inner diameter of the side wall of the focusing unit is gradually reduced from the top to the bottom along the direction vertical to the lower electrode so as to limit the wafer at the central position of the surface of the lower electrode and avoid the collision between the wafer and the upper surface of the focusing unit;
the opening area surrounded by the focusing unit can accommodate the wafer, so that a gap exposing the lower electrode is formed between the wafer placed on the surface of the lower electrode and the focusing unit.
2. The wafer bonding plasma processing apparatus of claim 1, wherein a cross section of the focusing unit in a direction parallel to the lower electrode is a circular ring shape.
3. The wafer bonding plasma processing apparatus according to claim 1, wherein a cross section of the focusing unit in a direction parallel to the lower electrode is a circumscribed polygon of the wafer.
4. The wafer bonding plasma processing apparatus as claimed in claim 1, wherein a side of the focusing unit facing the lower electrode is provided with a chamfer angle, and the chamfer angle is inclined at an angle of 10 ° to 80 ° with respect to a plane in which the lower electrode is located.
5. The wafer bonding plasma processing apparatus of claim 1, wherein the at least one chucking hole includes a plurality of chucking holes, and the plurality of chucking holes are symmetrically arranged about an axial direction of the inner chuck.
6. The wafer bonding plasma processing apparatus as claimed in claim 5, wherein the plurality of absorption holes form a plurality of absorption bands, each absorption band includes a plurality of absorption holes arranged linearly, and the plurality of absorption bands are distributed on the bearing surface in a central symmetry manner.
7. The wafer bonding plasma processing apparatus of claim 6, wherein the plurality of suction bands includes 8 suction bands.
8. The wafer bonding plasma processing apparatus of claim 1, further comprising a detector and a controller; the detector is connected with the controller and used for detecting the adsorption pressure value between the wafer and the internal chuck and transmitting the adsorption pressure value to the controller; and the controller is used for judging whether the adsorption pressure value is within a preset range, and if not, sending an alarm signal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810270841.2A CN108511312B (en) | 2018-03-29 | 2018-03-29 | Wafer bonding plasma processing device |
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| CN201810270841.2A CN108511312B (en) | 2018-03-29 | 2018-03-29 | Wafer bonding plasma processing device |
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| CN108511312B true CN108511312B (en) | 2020-04-10 |
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| CN111211078A (en) * | 2020-01-14 | 2020-05-29 | 长江存储科技有限责任公司 | Wafer calibration device and method and wafer edge etching equipment and method |
| CN111293029A (en) * | 2020-04-03 | 2020-06-16 | 长江存储科技有限责任公司 | Limiting element and plasma processing equipment |
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| US5891348A (en) * | 1996-01-26 | 1999-04-06 | Applied Materials, Inc. | Process gas focusing apparatus and method |
| KR20030096473A (en) * | 2002-06-12 | 2003-12-31 | 삼성전자주식회사 | Semiconductor dry etching equipment |
| CN101989544B (en) * | 2009-08-07 | 2012-05-23 | 中微半导体设备(上海)有限公司 | Structure capable of reducing substrate back polymer |
| CN104064508B (en) * | 2014-07-08 | 2017-07-25 | 上海华力微电子有限公司 | Eliminate the sucker and method of exposing wafer defect out of focus |
| CN206271677U (en) * | 2016-12-23 | 2017-06-20 | 中芯国际集成电路制造（天津）有限公司 | Fragmentation arrangement for detecting |
| CN207834260U (en) * | 2018-01-24 | 2018-09-07 | 武汉新芯集成电路制造有限公司 | A kind of plasma-activated reaction chamber and wafer bonding board |
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