CN107953242A - Color-buffing finish device and polishing system - Google Patents
Color-buffing finish device and polishing system Download PDFInfo
- Publication number
- CN107953242A CN107953242A CN201711401420.0A CN201711401420A CN107953242A CN 107953242 A CN107953242 A CN 107953242A CN 201711401420 A CN201711401420 A CN 201711401420A CN 107953242 A CN107953242 A CN 107953242A
- Authority
- CN
- China
- Prior art keywords
- retaining ring
- color
- wafer
- polishing
- polishing pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
Abstract
The present invention provides a kind of color-buffing finish device and polishing system, belong to polissoir field, which includes：Rubbing head and retaining ring, the retaining ring are arranged on the rubbing head bottom, and the end face that the retaining ring is used to contact grinding pad sets abrasive particle layers；Rubbing head is to clamp wafer and apply pressure to wafer backside, and to accommodate wafer and wafer is limited in rubbing head, retaining ring can skid off or because centrifugal force is thrown out of retaining ring to avoid wafer from rubbing head bottom.The abrasive particle layers set in retaining ring, polishing pad is synchronized finishing while rubbing head pressure is maintained, and wafer is in a kind of polishing environment of smooth even all the time；The polishing system includes support base, polishing pad and at least one color-buffing finish device.
Description
Technical field
The present invention relates to polissoir technical field, and in particular to a kind of color-buffing finish device and polishing system.
Background technology
In semiconductor process flow, chemically mechanical polishing (Chemical Mechanical Polishing, CMP) is
A very important procedure, sometimes referred to as chemical-mechanical planarization (Chemical Mechanical
Planarization, CMP).So-called chemically mechanical polishing, it is to be acted on using chemical with mechanical integrated from semiconductor silicon on piece
Excess stock is removed, and it is obtained the technical process of flat surfaces.Specifically, this polishing method typically will be polished
Wafer clamped by rubbing head, and it is pressed on a high-speed rotating polishing pad with certain pressure, and including chemical throwing
Planarization is achieveed the purpose that by the phase mutual friction of polishing pad and chip under the action of the polishing slurries of photo etching and abrasive grains.
With the development of super large-scale integration, the increase of semiconductor crystal wafer diameter dimension, and circuit components size
Reduction, be gradually reduced component volume, cause the three-dimensional of circuit structure, cause the input and output lead of chip drastically to increase
Adding, chip internal line and line density rise rapidly, and the cross-sectional area of line is gradually reduced, with the increase of number of metal,
Lithography requirements must be flat per layer surface.Chemically mechanical polishing is to realize the general side of global planarizartion in crystal column surface at present
Method.
Traditional polissoir is individually arranged using rubbing head with trimmer now, utilizes rubbing head and its lower end
Maintain ring to apply pressure to wafer to be polished, grinding pad is repaired using trimmer, when work needs rubbing head and repaiies
Whole device is synchronized with the movement, and this adds increased the control difficulty in motion process, and trimmer and polishing pad contact area are smaller, repair
Whole uneven and efficiency is low.
The content of the invention
The first object of the present invention is to provide a kind of color-buffing finish device, which simplifies structure, no
It can only realize the polishing function to wafer, additionally it is possible to the synchronous grooming function realized to polishing pad.
The second object of the present invention is to provide a kind of polishing system based on using above-mentioned color-buffing finish device, utilizes this
Polishing system can be more easily to polishing wafer.
Based on above-mentioned first purpose, color-buffing finish device provided by the invention, including：Rubbing head and retaining ring, the guarantor
Held in ring is arranged on the rubbing head bottom, and the end face that the retaining ring is used to contact grinding pad sets abrasive particle layers.
Rubbing head is to clamp wafer and apply pressure to wafer backside, and retaining ring is accommodating wafer and limit wafer
In rubbing head, retaining ring can skid off from rubbing head bottom to avoid wafer or because centrifugal force is thrown out of.Set in retaining ring
Abrasive particle layers, polishing pad is synchronized finishing while rubbing head pressure is maintained, and makes wafer all the time in a kind of smooth
Uniform polishing environment, avoids in original retaining ring and trimmer Split type structure that trimmer and polishing pad contact area are small, repaiies
Main plot domain is uneven, the accurately drawback such as control is needed in swing process.
, can be synchronous to polishing pad to being realized in the polishing process of wafer using the color-buffing finish device of above-mentioned structure
Grooming function, equivalent to the contact area for increasing trimmer and polishing pad so as to add dressing efficiency, while simplifies and sets
Standby structure.
Further, the thickness of the abrasive particle layers is 1-10mm.
Further, the diameter dimension scope of the abrasive grain is 5~7 μm.
Further, the abrasive particle layers are formed using diamond particles.
Further, the internal diameter of the retaining ring is arranged within 300mm.
Further, the internal diameter of the retaining ring is arranged to be configured to accommodate with 200mm, 250mm or 300mm
The wafer of diameter.
Further, the roughness of the internal ring wall of the retaining ring is between 2 μ in 10 μ in.
Further, the retaining ring is fixedly connected or is detachably connected with the rubbing head bottom.
Based on above-mentioned second purpose, a kind of polishing system provided by the invention, including support base, polishing pad and at least one
A above-mentioned color-buffing finish device, the polishing pad are arranged on the support base, the retaining ring in the color-buffing finish equipment
On abrasive particle layers can be contacted with polishing pad, the rubbing head can be such that wafer is contacted with the polishing pad.
Further, slurry supply apparatus is further included, to export lapping liquid to polishing pad.
Using above-mentioned technical proposal, beneficial effects of the present invention have：
Color-buffing finish device provided by the invention includes rubbing head and retaining ring, and retaining ring is arranged on rubbing head bottom, protects
The end face that held in ring is used to contact grinding pad sets abrasive particle layers.Rubbing head is pressed to clamp wafer and wafer backside is applied
Power, to accommodate wafer and wafer is limited in rubbing head, retaining ring can be slided retaining ring to avoid wafer from rubbing head bottom
Go out or because centrifugal force is thrown out of.The abrasive particle layers set in retaining ring, while rubbing head pressure is maintained to polishing pad into
The synchronous finishing of row, makes wafer be in a kind of polishing environment of smooth even all the time, avoids original retaining ring and trimmer split
Trimmer and polishing pad contact area are small in structure, and dressing area is uneven, the accurately drawback such as control is needed in swing process.
, can be synchronous to polishing pad to being realized in the polishing process of wafer using the color-buffing finish device of above-mentioned structure
Grooming function, equivalent to the contact area for increasing trimmer and polishing pad so as to add dressing efficiency, while simplifies and sets
Standby structure.
Polishing system provided by the invention includes support base, polishing pad and above-mentioned color-buffing finish device, polishing pad and sets
Put on support base, the abrasive particle layers in retaining ring in color-buffing finish equipment can be contacted with polishing pad, and rubbing head can
Wafer is set to be contacted with polishing pad.
Support base is the support platform of polishing system, and it is to carry polishing pad and drive polishing pad to rotate that it, which is acted on, and polishing is repaiied
Finishing equipment is polished wafer by polishing pad to clamp wafer, meanwhile, the color-buffing finish equipment is also to polishing
Pad is repaired.
Brief description of the drawings
, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution of the prior art
Embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, in describing below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
Put, other attached drawings can also be obtained according to these attached drawings.
Fig. 1 is the structure diagram for the color-buffing finish device that the embodiment of the present invention one provides；
Fig. 2 is the structure diagram of the retaining ring in the color-buffing finish device that the embodiment of the present invention one provides；
Fig. 3 is the structure diagram of polishing system provided by Embodiment 2 of the present invention；
Fig. 4 is that the position relationship of color-buffing finish device and polishing pad shows in polishing system provided by Embodiment 2 of the present invention
It is intended to；
Fig. 5 is the position relationship schematic diagram of rubbing head, trimmer and polishing pad in prior art polishing system.
Icon：100- rubbing heads；200- retaining rings；300- abrasive particle layers；10- support bases；20- polishing pads；30- is polished
Trimming device；30 '-burnishing device, 40- slurry supply apparatus, 50- trimmers.
Embodiment
Technical scheme is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's all other embodiments obtained without making creative work, belong to the scope of protection of the invention.
In the description of the present invention, it is necessary to explanation, term " " center ", " on ", " under ", "left", "right", " vertical ",
The orientation or position relationship of the instruction such as " level ", " interior ", " outer " be based on orientation shown in the drawings or position relationship, merely to
Easy to describe the present invention and simplify description, rather than instruction or imply signified device or element must have specific orientation,
With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.In addition, term " first ", " second ",
" the 3rd " is only used for description purpose, and it is not intended that instruction or hint relative importance.
In the description of the present invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or be electrically connected；It can be directly connected, can also be indirectly connected by intermediary, Ke Yishi
Connection inside two elements.For the ordinary skill in the art, with concrete condition above-mentioned term can be understood at this
Concrete meaning in invention.
Embodiment one
Fig. 1 is the structure diagram for showing the color-buffing finish device that embodiment one provides；Fig. 2 shows that embodiment one carries
The structure diagram of retaining ring in the color-buffing finish device of confession.
It refer to shown in Fig. 1 and Fig. 2；The color-buffing finish device provided in the embodiment of the present invention includes：Rubbing head 100 and guarantor
Held in ring 200.
Retaining ring 200 is arranged on 100 bottom of rubbing head, and the end face that retaining ring 200 is used to contact grinding pad sets mill
Expect stratum granulosum 300.
Rubbing head 100 is to clamp wafer and apply pressure to wafer backside, and retaining ring 200 is accommodating wafer and make crystalline substance
Circle is limited in rubbing head 100, and retaining ring 200 can skid off or because centrifugal force is thrown out of to avoid wafer from 100 bottom of rubbing head.
The abrasive particle layers 300 set in retaining ring 200, polishing pad is synchronized finishing while 100 pressure of rubbing head is maintained,
Wafer is in a kind of polishing environment of smooth even all the time, avoid and repaiied in original retaining ring 200 and trimmer Split type structure
Whole device and polishing pad contact area are small, and dressing area is uneven, the accurately drawback such as control is needed in swing process.
, can be synchronous to polishing pad to being realized in the polishing process of wafer using the color-buffing finish device of above-mentioned structure
Grooming function, equivalent to the contact area for increasing trimmer and polishing pad so as to add dressing efficiency, while simplifies and sets
Standby structure.
In one preferred embodiment, the thickness of abrasive particle layers 300 is 1-10mm.The thickness of the abrasive particle layers 300
It when specifically chosen, can be adjusted according to the thickness of wafer, so that the polishing for ensureing wafer is at the same time, utilize abrasive material
Granulosa 300 repairs polishing pad.
In one preferred embodiment, the diameter dimension scope of abrasive grain is 5~9 μm.Abrasive material can use superhard material
Expect, in the present embodiment, abrasive particle layers 300 are formed using diamond particles.The hardness of diamond is big, and bearing capacity is big, wear resistence
Can be strong, there is stable chemical property, strong alkali-acid resistance corrosion, can repair polishing pad using the diamond particles.
Polishing pad can use the porous polyurethane material of foaming type to be made in the present embodiment, which is a kind of porous
Sponge, using this similar mechanical property of sponge and the material of porosity characteristic, improve the uniformity of polishing.
In one preferred embodiment, the internal diameter of retaining ring 200 is arranged within 300mm.
When it is implemented, the internal diameter of retaining ring 200 is arranged to be configured to accommodate have 200mm, 250mm or 300mm
Diameter wafer.Above-mentioned wafer specifications are the diameter dimension of the wafer of generally use, and the internal diameter of retaining ring 200 is slightly larger than crystalline substance
Diameter of a circle size, for example, when wafer uses 200mm diameters, the internal diameter of retaining ring 200 can use 205mm, in order to be able to
Accommodate wafer.
In one preferred embodiment, the roughness of the internal ring wall of retaining ring 200 is between 2 μ in 10 μ in.Internal ring wall
It can be polished by grinding, flame polish, vapor polishing or by other suitable methods.Internal ring wall can be polished to small
It is preferably 4 μ in such as between 2 μ in and 10 μ in 30 mean roughness (Ra) in terms of microinch (μ in).
And the internal ring wall of retaining ring 200 can be polished to the Ra less than 10 μ in, internal ring wall has smooth surface, reduces
Particle produces and accessory substance is attached on internal ring wall.In addition, internal ring wall is polished so that cleaning becomes easy.
In one preferred embodiment, retaining ring 200 is fixedly connected or is detachably connected with 100 bottom of rubbing head.Using
The mode of being fixedly connected can be bonding, weld or the mode such as be integrally formed；Can be screw connection etc. using being detachably connected
Mode, i.e., be threaded hole respectively in 200 upper surface of rubbing head 100 and retaining ring (joint face with rubbing head 100), leads to
Crossing screw enables both to fix and (not illustrate in attached drawing).
In one preferred embodiment, retaining ring 200 can by stainless steel, aluminium, molybdenum, ceramics or ceramic filler polymer,
Or other suitable materials are formed.In addition, retaining ring 200 can also be made of plastic material, such as polyphenylene sulfide (PPS), poly- pair
Ethylene terephthalate, polyether-ether-ketone, polybutylene terephthalate (PBT), Ertalyte TX, PEEK, Torlon,
Delrin, PET, Vespel, Duratrol or other suitable materials.
In one preferred embodiment, retaining ring 200 may also include the coating of resistance to technique, and the coating of resistance to technique can cover guarantor
One or more surfaces for being exposed to process conditions and/or be easy to release metal and/or accumulation process materials of held in ring 200.
The coating of resistance to technique can be hydrophobic material, it can prevent the chemical interaction with process fluid, such as based on for polishing
The chemical property of the polishing fluids of wafer carrys out the polymeric material of selection in equipment.Polymeric material can be carbonaceous material, such as pa profit
Clever (parylene) (Parylene), for example, parylene C (the linear Parylene of chlorination), parylene N are (linear poly- to two
Toluene) and parylene X (crosslinking Parylene).Other workable carbonaceous materials include polyether-ether-ketone (PEEK), polyphenylene sulfide
Ether (PPS), polyethylene terephthalate, long-life chemically mechanical polishing x5 (CMP LL5) polyester, amorphous transparent polyethers acyl
Imines, polyethylene terephthalate (PET) and diamond-like-carbon (DLC).
It should be noted that the color-buffing finish device in the present embodiment further include to adjust 100 times pressure of rubbing head with
And the adjusting mechanism rotated, which is well-known to those skilled in the art, and no longer its structure is repeated herein.
Embodiment two
Fig. 3 shows the structure diagram for the polishing system that embodiment two provides；Fig. 4 shows the throwing that embodiment two provides
In photosystem, the position relationship schematic diagram of color-buffing finish device and polishing pad.
Fig. 3 is refer to, present embodiments provides a kind of polishing system, which includes support base 10, polishing pad 20
And the color-buffing finish device 30 that at least one above-mentioned implementation one provides, polishing pad 20 are arranged on support base 10, color-buffing finish
The abrasive particle layers 300 in retaining ring 200 in equipment can be contacted with polishing pad 20, and rubbing head 100 can make wafer with throwing
Light pad 20 contacts.
In use, wafer is fixed in rubbing head 100 and retaining ring 200, polishing pad is placed on abrasive disk, is polished
When, rotating rubbing head 100 is pressed on rotating polishing pad with certain pressure, by sub-micron or nano-abrasive and chemical solution
The lapping liquid of composition flows between silicon chip surface and polishing pad, and then lapping liquid is in the transmission of polishing pad and the effect of centrifugal force
Under, it is uniformly distributed thereon, one layer of lapping liquid fluid film is formed between wafer and polishing pad.Chemical composition in lapping liquid
Produce chemical reaction with wafer surface material, insoluble material be converted into readily soluble material, or by the high material of hardness into
Row softening, then these chemical reactants are removed, dissolve in flowing by the micromechanics rubbing action of abrasive particle from wafer surface
Liquid in take away, i.e., the purpose of planarization is realized in the alternation procedure of chemical striping and mechanical striping.
Its reaction is divided into two processes：
Chemical process：Chemicals and wafer surface in lapping liquid chemically react, and generation is easier what is removed
Material；
Physical process：Mechanical-physical friction occurs for abrasive particle and wafer surface material in lapping liquid, removes chemical reaction
The material of generation.
Meanwhile the diamond abrasive of 200 bottom surface of retaining ring can while 100 pressure of rubbing head is maintained to polishing pad into
The synchronous finishing of row, makes wafer be in a kind of polishing environment of smooth even all the time, avoids original maintenance ring and trimmer split
Trimmer and polishing pad contact area are small in structure, and dressing area is uneven, the accurately drawback such as control is needed in swing process.
In one preferred embodiment, which further includes slurry supply apparatus 40, the slurry supply apparatus
40, to export lapping liquid to polishing pad 20, ensure being smoothed out for polishing wafer.
It should be noted that above-mentioned support base by motor drive rotate, this be it is well-known to those skilled in the art,
No longer its structure is repeated herein.
Fig. 4 is refer to, shows the position relationship schematic diagram of color-buffing finish device and polishing pad.Due to the polishing system
In, the abrasive particle layers 300 in retaining ring 200 in color-buffing finish equipment can be contacted with polishing pad 20, and rubbing head 100 can
Wafer is contacted the use for repair polishing pad, eliminating traditional trimmer with polishing pad 20, make polishing system structure simpler
It is single, control difficulty is reduced, adds finishing area.
Fig. 5 is refer to, is shown in the prior art, burnishing device 30 ', trimmer 50 and the position relationship of polishing pad 20 show
It is intended to.Since in the polishing system, movement uses on polishing pad at the same time for trimmer and burnishing device, compared to the throwing of the present invention
Photosystem, prior art construction is complex, and control difficulty is big, and finishing area is small.
Finally it should be noted that：The above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe is described in detail the present invention with reference to foregoing embodiments, it will be understood by those of ordinary skill in the art that：Its according to
Can so modify to the technical solution described in foregoing embodiments, either to which part or all technical characteristic into
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (10)
- A kind of 1. color-buffing finish device, it is characterised in that including：Rubbing head and retaining ring, the retaining ring are arranged on the throwing Bare headed bottom, the end face that the retaining ring is used to contact grinding pad set abrasive particle layers.
- 2. color-buffing finish device according to claim 1, it is characterised in that the thickness of the abrasive particle layers is 1- 10mm。
- 3. color-buffing finish device according to claim 1, it is characterised in that the diameter dimension scope of the abrasive grain is 5~7 μm.
- 4. color-buffing finish device according to claim 1, it is characterised in that the abrasive particle layers use diamond particles Composition.
- 5. according to claim 1-4 any one of them color-buffing finish devices, it is characterised in that the internal diameter of the retaining ring is set Within 300mm.
- 6. color-buffing finish device according to claim 5, it is characterised in that the internal diameter of the retaining ring is arranged to be configured to The wafer of the diameter with 200mm, 250mm or 300mm can be accommodated.
- 7. according to claim 1-4 any one of them color-buffing finish devices, it is characterised in that the internal ring wall of the retaining ring Roughness is between 2 μ in 10 μ in.
- 8. according to claim 1-4 any one of them color-buffing finish devices, it is characterised in that the retaining ring and the polishing Head bottom is fixedly connected or is detachably connected.
- 9. a kind of polishing system, it is characterised in that including any one of support base, polishing pad and at least one claim 1-8 The color-buffing finish device, the polishing pad are arranged on the support base, in the retaining ring in the color-buffing finish equipment Abrasive particle layers can be contacted with polishing pad, the rubbing head can be such that wafer is contacted with the polishing pad.
- 10. polishing system according to claim 9, it is characterised in that further include slurry supply apparatus, ground to export Grinding fluid is to polishing pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711401420.0A CN107953242A (en) | 2017-12-22 | 2017-12-22 | Color-buffing finish device and polishing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711401420.0A CN107953242A (en) | 2017-12-22 | 2017-12-22 | Color-buffing finish device and polishing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107953242A true CN107953242A (en) | 2018-04-24 |
Family
ID=61955825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711401420.0A Pending CN107953242A (en) | 2017-12-22 | 2017-12-22 | Color-buffing finish device and polishing system |
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| Country | Link |
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| CN (1) | CN107953242A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110153839A (en) * | 2019-06-06 | 2019-08-23 | 中国工程物理研究院激光聚变研究中心 | Unified polishing immersion element processing unit (plant), processing method and polishing machine |
| CN110394706A (en) * | 2019-07-25 | 2019-11-01 | 西安奕斯伟硅片技术有限公司 | A kind of silicon wafer processing unit and method |
| CN111318959A (en) * | 2020-04-16 | 2020-06-23 | 清华大学 | Retaining ring and carrier head for chemical mechanical polishing |
| US20230019815A1 (en) * | 2015-05-29 | 2023-01-19 | Applied Materials, Inc. | Retaining ring having inner surfaces with features |
| CN117083150A (en) * | 2021-03-17 | 2023-11-17 | 超微细技研有限公司 | Polishing head and polishing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20230019815A1 (en) * | 2015-05-29 | 2023-01-19 | Applied Materials, Inc. | Retaining ring having inner surfaces with features |
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| CN111318959B (en) * | 2020-04-16 | 2024-02-06 | 清华大学 | Retaining ring and carrier head for chemical mechanical polishing |
| CN117083150A (en) * | 2021-03-17 | 2023-11-17 | 超微细技研有限公司 | Polishing head and polishing apparatus |
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Application publication date: 20180424 |