WO2004043648A1

WO2004043648A1 - Polishing apparatus

Info

Publication number: WO2004043648A1
Application number: PCT/JP2003/013628
Authority: WO
Inventors: Masayoshi Hirose; Hozumi Yasuda; Kazuto Hirokawa; Ikutaro Noji
Original assignee: Ebara Corporation
Priority date: 2002-11-11
Filing date: 2003-10-24
Publication date: 2004-05-27
Also published as: US20070004324A1; JP2004160573A; TW200414966A; AU2003275653A1

Abstract

A polishing apparatus, comprising a polished object holding mechanism for holding a polished object and a table having a polishing surface, wherein the polished object held by the polished object holding mechanism is pressed against the polishing surface of the table, and the polished object is polished by the relative motion of the polished object held by the polished object holding mechanism to the polishing surface of the table, and also an elastic body sheet (11) is stretched on the upper surface of the table and a polishing pad (16) having a polishing surface on the upper surface thereof is replaceably stretched on the elastic body sheet (11) to provide a function played by the lower pad of a double-layer polishing pad used in a chemical machine polishing (CMP) apparatus to the table of the chemical machine polishing (CMP) apparatus, whereby the cost of a chemical machine polishing (CMP) process can be lowered, and a process performance such as the uniformity of polishing speed on the surface of a polished substrate can be stabilized.

Description

Technical field to which the invention belongs

The present invention relates to a chemical mechanical polishing (CMP) apparatus used for flattening a substrate to be polished, particularly a substrate such as a semiconductor wafer, and forming wiring.

BACKGROUND OF THE INVENTION

Conventionally, a two-layer pad is often used as a polishing body to be attached to a table surface of a chemical mechanical polishing (CM field P) apparatus of this kind (for example, see Japanese Patent Application Laid-Open No. 6-21028). ). This is because the polishing pad is required to simultaneously have two performances, that is, a capability of flattening a step of a pattern or the like existing in a semiconductor wafer or the like and a uniformity of a polishing rate in a wafer surface.

Since a pad having high hardness has a small deformation itself, pressure is concentrated on the convex portion of the substrate to be polished. For this reason, it has a high ability to flatten steps such as patterns existing in semiconductor wafers, etc., but on the other hand, it is also susceptible to large undulations and warpages that exist over the entire surface of the semiconductor wafer, and variations in thickness. This adversely affects the uniformity of the polishing rate within the semiconductor wafer surface.

On the other hand, a pad with low hardness has a large amount of deformation and is easy to follow the shape of the object to be polished, so it is not easily affected by large undulations and warpages in the wafer surface, variations in thickness, and the like. Performance is relatively easy to obtain, but the ability to flatten steps such as patterns is low.

Conventionally, in order to solve the problem caused by the hardness of the polishing pad as described above, a two-layer pad is used for the polishing pad, a relatively hard pad on the surface of the two-layer pad, and a low hardness on the lower layer. By using pads, we compensate for the weaknesses of each of the above pads, and realize polishing that does not lose the ability to flatten out steps such as patterns while following the undulation, warpage, and thickness variations of the entire semiconductor wafer. I have.

In the case of a two-layer polishing pad used in conventional chemical mechanical polishing (CMP) equipment, it is supplied in a state where two types of pads are bonded together, so the price is higher than a single-layer pad, and Contributes to actual polishing when replacing consumable polishing pads It is necessary to replace not only the surface pad but also the lower pad at the same time.

(CMP) contributes to the cost of the process.

Also, if the characteristics of the pads used for the lower layer change, the uniformity of the polishing rate within the semiconductor wafer surface changes, so it is necessary to use a material that minimizes the variation in the elasticity of the lower layer pad. In such a case, each time the pad is replaced, a variation factor such as an individual difference of the lower layer pad is generated.

Summary of the Invention

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and has been described in the table of a chemical mechanical polishing (CMP) apparatus, in which a function performed by a lower layer pad of a two-layer polishing pad used in a chemical mechanical polishing (CMP) apparatus is performed. This can reduce the cost of the chemical mechanical polishing (CMP) process and stabilize the process performance such as the uniformity of the polishing rate in the surface of the substrate to be polished. In particular, it is an object of the present invention to provide a polishing apparatus suitable for forming an insulating film and a flat surface of a semiconductor wafer, and forming wirings and contacts.

According to a first aspect of the present invention, there is provided a polishing apparatus comprising: a polishing object holding mechanism for holding a polishing object; and a table having a polishing surface. The object to be polished held by the object is pressed against the polishing surface of the table, and the object to be polished is polished by the relative movement between the object to be polished held by the object to be polished and the polishing surface of the table. An elastic sheet is stretched, and a polishing pad having a polishing surface on an upper surface is replaceably stretched on the elastic sheet.

The elastic sheet preferably has a plurality of protrusions on the surface.

As described above, an elastic sheet (preferably, an elastic sheet having a plurality of projections) is provided on the upper surface of the table, and a polishing pad having a polishing surface on the upper surface can be replaced on the elastic sheet. Since the elastic sheet has the function performed by the lower layer pad of the conventional two-layer pad, when the polishing ability of the polishing pad is reduced, only the polishing pad can be replaced. Thus, the polishing apparatus can reduce the cost of the polishing process and stabilize the process performance such as the uniformity of the polishing rate in the object to be polished.

According to a second aspect of the present invention, a polishing apparatus comprises: an object holding mechanism for holding an object to be polished; and a table having a polishing surface, and the object to be polished held by the object holding mechanism. In a polishing apparatus for pressing an object against a polishing surface of a table and polishing the object by relative movement between the object to be polished held by the object to be polished holding mechanism and the polishing surface of the table, a concave portion is formed on the upper surface of the table. A fluid chamber is formed by covering the opening of the concave portion with an elastic sheet, and the fluid chamber is filled with a fluid of a predetermined pressure, and a polishing pad having a polishing surface on the upper surface of the elastic sheet can be replaced. It is characterized by being stretched over.

As described above, a concave portion is provided on the upper surface of the table, an opening of the concave portion is covered with an elastic sheet to form a fluid chamber, and the fluid chamber is filled with a fluid at a predetermined pressure. The replacement of a polishing pad with a polishing surface on the upper surface allows the elastic sheet to have the function of the lower pad of the conventional two-layer pad, and the polishing capability of the polishing pad has declined. In this case, it is possible to replace only the polishing pad, thereby reducing the cost of the polishing process and stabilizing the process performance such as the uniformity of the polishing rate in the object to be polished.

According to a third aspect of the present invention, in the polishing apparatus of the second aspect, a fluid supply unit for supplying a fluid to the fluid chamber is provided, and the elastic sheet is provided with a fluid supplied from the fluid supply unit. Characterized in that it can be deformed according to the supply pressure.

As described above, by providing a fluid supply unit that supplies a fluid to the fluid chamber, the elastic sheet can be deformed in accordance with the supply pressure of the fluid supplied from the fluid supply unit. Since the amount of deformation of the elastic sheet can be adjusted by adjusting the fluid supply pressure of the fluid chamber, a polishing apparatus capable of performing polishing suitable for the characteristics of the object to be polished is provided.

According to a fourth aspect of the present invention, in the polishing apparatus according to the third aspect, the fluid supply unit includes a flow path for supplying a fluid and a fluid source, and the fluid source controls a supply pressure of the fluid. It is characterized by having a control unit.

As described above, the fluid supply unit includes the flow path for supplying the fluid and the fluid source, and the fluid source includes the control unit that controls the supply pressure of the fluid, so that the pressure of the fluid chamber can be arbitrarily adjusted. Since the amount of deformation of the elastic sheet can be arbitrarily adjusted, the polishing apparatus can perform polishing suitable for the characteristics of the object to be polished.

According to a fifth aspect of the present invention, in the polishing apparatus of the fourth aspect, the table further comprises: a plurality of pistons between the elastic sheet and the polishing pad; A piston guide plate for restricting the direction, wherein the piston is guided by the piston guide plate so as to move in a direction perpendicular to the polishing surface of the polishing pad following the deformation of the elastic sheet. I do.

As described above, the table further includes a plurality of pistons between the elastic sheet and the polishing pad, and a piston guide plate for restricting the direction of movement of the piston, so that by adjusting the pressure in the fluid chamber, However, since the amount of vertical movement of a large number of pistons can be adjusted, it becomes possible to perform polishing more suitable for the characteristics of the object to be polished. According to a sixth aspect of the present invention, a polishing apparatus comprises: an object holding mechanism for holding an object to be polished; and a table having a polishing surface, and the object to be polished held by the object holding mechanism. Is pressed against the polished surface of the table, and the relative movement between the polished object held by the polished object holding mechanism and the polished surface of the table causes the polishing apparatus to polish the polished object. An elastic sheet having a plurality of concave portions is stretched so as to enclose a fluid therebetween, and a polishing pad having a polishing surface on an upper surface is replaceably stretched on the elastic sheet.

As described above, the elastic sheet having a plurality of concave portions is stretched on the upper surface of the table so as to seal the fluid between the upper surface of the table and the polishing pad having the polishing surface on the upper surface is replaced on the elastic sheet. When the polishing pad is stretched as possible, the function of the lower pad of the conventional two-layer pad is performed by the elastic sheet having a plurality of recesses filled with fluid, and the polishing ability of the polishing pad is reduced. This makes it possible to replace only the polishing pad, thereby providing a polishing apparatus capable of reducing the cost of the polishing process and stabilizing the process performance such as the uniformity of the polishing rate in the object to be polished.

According to a seventh aspect of the present invention, a polishing apparatus comprises: an object holding mechanism for holding an object to be polished; and a table having a polishing surface, and the object to be polished held by the object holding mechanism. A polishing apparatus for pressing the object against the polishing surface of the table, and polishing the object to be polished by a relative movement between the object to be polished held by the object to be polished holding mechanism and the polishing surface of the table; An elastic sheet is stretched on the upper surface of the belt, and a polishing pad having a polishing surface on the upper surface is replaceably stretched on the elastic sheet. I do.

As described above, the table comprises a belt suspended between pulleys, An elastic sheet is stretched on the upper surface, and a polishing pad having a polishing surface on the upper surface is replaceably stretched on the elastic sheet. When the polishing performance of the polishing pad is reduced due to the performance of the sheet, it is possible to replace only the polishing pad, thereby reducing the cost of the polishing process and stabilizing the process performance such as the uniformity of the polishing speed in the object to be polished. It is a polishing apparatus that can be used.

The above object and other objects of the present invention will become apparent from the following embodiments shown in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a side sectional view showing a configuration example of a table section of a chemical mechanical polishing (CMP) apparatus according to the present invention.

FIG. 2 is a side sectional view showing another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention.

Fig. 3 is an enlarged view of the part A in Fig. 2, Figs. 3 (a) and (b) are enlarged views of the part A, and Fig. 3 (c) is a sectional view of Fig. 3 (a) and (b). It is B sectional drawing.

FIG. 4 is a side sectional view showing still another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention.

FIG. 5 is a side sectional view showing another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention.

FIG. 6 is a sectional side view showing still another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention.

FIG. 7 is a sectional view taken along line AA of FIG.

FIG. 8 is a side sectional view showing still another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention.

Fig. 9 is an enlarged view of part A in Fig. 8. Fig. 9 (a) is a side view of part A, and Figs. 9 (b) and (c) are B-B in Figs. 9 (a) and (b). It is arrow sectional drawing.

FIG. 10 is a side sectional view showing still another example of the configuration of the table portion of the chemical mechanical polishing (CMP) apparatus according to the present invention.

Preferred embodiments of the invention Hereinafter, preferred embodiments of a polishing apparatus according to the present invention will be described with reference to the drawings.

FIG. 1 is a side sectional view showing a configuration of a table section of a chemical mechanical polishing (CMP) apparatus according to the present invention. As shown in the figure, an elastic sheet 11 A is fixed as a lower layer member on the surface of the turntable 10, and a polishing pad 16 is attached to the surface of the elastic sheet 11 A.

The elastic sheet 11 A is a flexible sheet that deforms in response to pressure, such as a nonwoven fabric or a porous resin sheet. The fixing method is such that the outer edge of the turntable 10 is fixed via a ring-shaped pressing member 12. A plurality of ports 13 are used for fixing, and the central portion is fixed using ports 15 via a disc-shaped pressing member 14. The method of fixing the elastic sheet 11A to the surface of the rotary table 10 can be performed by attaching the elastic sheet 11A to the surface of the rotary table 10 using a double-sided tape or an adhesive. Alternatively, the double-sided tape or adhesive, the ring-shaped pressing member 12 and the plurality of ports 13, and the disc-shaped pressing member 14 and the port 15 may be used in combination. The elastic sheet 11A has sufficient smoothness on the upper surface so that the polishing pad 16 can be detachably adhered with a double-sided tape.

The polishing pad 16 is basically a relatively hard single-layer polishing pad (for example, a foamed polyurethane pad, etc.) having an excellent ability to eliminate a step on the polished surface, and using a double-sided tape or It is removably attached to the elastic sheet 11A surface using an adhesive. The polishing pad 16 is not limited to a single-layer pad, but may be a two-layer polishing pad.

The turntable 10 can be rotated in a predetermined direction by a motor 17. Except for the ring-shaped pressing member 12 and the disc-shaped pressing member 14 of the polishing pad 16, the band-shaped portion on the upper surface of the polishing pad is a polishing area 18, and the polishing pad 1 of the polishing area 18 is provided. The substrate to be polished held by the substrate holding mechanism (not shown) is pressed against the polishing surface on the upper surface of 6, and the polishing pad 16 and the substrate to be polished by the rotation of the turntable 10 and the rotation of the substrate holding mechanism (top ring, etc.) Is polished by the relative motion of. Although not shown, the polishing liquid is supplied to the surface of the polishing pad 16. As described above, by using a relatively high-hardness polishing pad 16 for the surface polishing pad 16 and a low-hardness elastic sheet 11 A for the lower layer, relatively high-hardness polishing is possible. Polishing pad that compensates for the weakness of polishing pad 16 and elastic sheet 11 A with low hardness, and has the ability to flatten the steps of patterns etc. while following the undulation, warpage, and thickness variations of the entire substrate to be polished. Can be realized. Particularly, it is suitable for flattening and wiring of a substrate such as a semiconductor wafer. When the polishing ability of the polishing pad 16 is reduced, the polishing pad 16 is removed from the conductive sheet 11 A, and only the polishing pad 16 is replaced.

2 and 3 are views showing another configuration of the table portion of the chemical mechanical polishing (CMP) apparatus according to the present invention. FIG. 2 is a side sectional view, and FIGS. 3 (a) and 3 (b) are views of FIG. Fig. 3 (c) is an enlarged view of the portion A, and Fig. 3 (c) is a cross-sectional view taken along line BB of Figs. 3 (a) and (b). In FIGS. 2 and 3, portions denoted by the same reference numerals as those in FIG. 1 indicate the same portions. The same applies to other figures. Here, a rubber sheet provided with a large number of projections (here, columnar projections) 11a on the surface is used as the elastic sheet 11B. The protrusions 11 a of the elastic sheet 11 B may face the polishing pad 16 as shown in FIG. 3 (a), or the rotating table 10 as shown in FIG. 3 (b). You may turn to the side. By providing the protrusions 11a, a space is created between the elastic sheet 11B and the polishing pad 16 or the rotating tape 10 and the clearance space, that is, the local pressurization around the periphery. Since the space is easily deformed by the elastic projections to disperse the pads, the pads can be deformed more easily.

By using a rubber sheet having a large number of protrusions 11a on the surface of the elastic sheet 11B as described above, the hardness of the rubber sheet of the lower layer can be compared with the hardness of the polishing pad 16 of the surface layer. As described above, the polishing pad 16 and the elastic sheet 11B are compensated for in the same way as above, and the unevenness of the pattern etc. is flattened while following the undulation and warpage of the substrate to be polished and variations in thickness. Polishing that does not lose the ability to perform polishing. In this case, too, the polishing pad 16 is detachably attached to the surface of the elastic sheet 11 B with a double-sided tape or an adhesive, and when the polishing capability of the polishing pad 16 is reduced, the polishing pad 16 is removed. Replace only.

FIG. 4 is a side sectional view showing still another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention. As shown in the figure, a circular band-shaped recess 20a was provided on the surface of the turntable 10, and the opening of the recess was covered with an elastic film or a thin metal plate sheet layer 19 to form a fluid chamber 20. Configuration. A gas of a predetermined pressure is stored in the fluid chamber 20. And liquids.

As described above, the rotary table 10 is provided with the concave portion 20a, and the four opening portions are covered with the sheet layer 19 to form the fluid chamber 20, so that the amount of deformation with respect to pressure can be reduced by the surface polishing pad. Since the lower sheet layer 19 is larger than 16, the weaknesses of the polishing pad 16 and the sheet layer 19 are compensated for in the same way as above, and the undulation, warpage and thickness variation of the polished substrate metal surface are reduced. Can achieve polishing without losing the ability to flatten steps such as patterns while copying. In particular, it is suitable for flattening a substrate such as a semiconductor wafer and forming wiring. Also in this case, the polishing pad 16 is detachably attached to the surface of the sheet layer 19 with a double-sided tape or an adhesive, and when the polishing capability of the polishing pad 16 is reduced, the polishing node 1 is removed. Replace only 6

FIG. 5 is a sectional side view showing still another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention. The difference between the present chemical mechanical polishing (CMP) equipment and the chemical mechanical polishing (CMP) equipment shown in Fig. 4 is that the flow path 21 for supplying pressure fluid to the fluid chamber 20 is connected and the fluid chamber 2 is connected. The point is that 0 is the pressure chamber. The flow path 21 passes through the center of the motor 17 and is connected to a pressure fluid source 23 via a rotary joint 22. By controlling the pressure at which the fluid is supplied from the pressure fluid source 23, the pressure in the fluid chamber 20, that is, the pressure chamber 1 can be adjusted. As described above, the flow path 21 for supplying the pressurized fluid is connected to the fluid chamber 20 of the rotary table 10, and the fluid chamber 20 is used as the pressurized chamber, whereby the deformation of the sheet layer 19 with respect to the pressure is performed. Since the amount can be adjusted, it is possible to realize polishing without losing the ability to flatten a step of a pattern or the like, while following the undulation or warpage of the substrate to be polished or the variation in thickness. As in the case of FIG. 4, it is particularly suitable for flattening a substrate such as a semiconductor wafer and forming wiring. In this case as well, the polishing pad 16 is detachably attached to the surface of the sheet layer 19 with a double-sided tape or an adhesive, and if the polishing ability of the polishing pad 16 decreases, only the polishing pad 16 is attached. Replace.

6 and 7 are views showing another example of the configuration of the table portion of the chemical mechanical polishing (CMP) apparatus according to the present invention. FIG. 6 is a side sectional view, and FIG. 7 is a sectional view taken along line AA of FIG. is there. The difference between this chemical mechanical polishing (CMP) device and the chemical mechanical polishing (CMP) device shown in Fig. 5 is that a fluid chamber 20 (pressurized) is provided between the sheet layer 19 and the polishing pad 16. Chiyamba By pressing the sheet layer 19 in 1), a large number of pistons 24 which are pressed by the sheet layer 19 and move up and down are provided.

The piston 24 is guided vertically by a piston stroke P S by a piston guide plate 25. The sheet layer 19 is fixed to the upper end surface of the rotary table 10 with a plurality of ports 27 via a ring-shaped holding member 26, and the piston guide plate 25 is mounted on the upper surface of the ring-shaped holding member 26. Porto 28 fixed. By providing a large number of pistons 24 guided by the piston stroke PS in the vertical direction with the piston guide plate 25 on the upper surface of the sheet layer 19 as described above, the deformation of the sheet layer 19 due to the pressure of the fluid chamber 20 The amount of vertical movement of the piston 24 can be adjusted accordingly, so that polishing that does not lose the ability to flatten out steps such as patterns while following the undulation, warpage, and thickness variation of the entire substrate to be polished. realizable. In particular, it is suitable for flattening a substrate such as a semiconductor wafer and forming wiring. Also in this case, the polishing pad 16 is detachably attached to the surface of the piston 24 and the piston guide plate 25 with a double-sided tape, an adhesive, or the like. Replace only.

8 and 9 are views showing still another configuration example of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention. FIG. 8 is a side sectional view, and FIG. FIGS. 9 (b) and 9 (c) are enlarged cross-sectional views taken along the line BB of FIG. 9 (a). 8 and 9, a rubber sheet having a large number of concave portions (here, circular or pentagonal) 11b provided on the surface of an elastic sheet 11C is used. As shown in FIG. 9 (a), the opening of the concave portion 11b of the elastic sheet 11C is bonded to the upper end surface of the turntable 10 with an adhesive. Fluids are sealed in the recesses 1 1b respectively.

By providing a large number of recesses 1 1b on the surface as the elastic sheet 11C as described above, and using a rubber sheet filled with fluid in each of the recesses, compared with the hardness of the polishing pad 16 on the surface, The hardness of the lower elastic sheet 11 C becomes lower (adjustable by the pressure of the fluid to be enclosed), compensating for the weaknesses of the polishing pad 16 and the elastic sheet 11 C, and undulating and warping the entire surface of the substrate to be polished. Polishing that does not lose the ability to flatten steps such as patterns while following variations in thickness can be realized. Particularly, it is suitable for flattening a substrate such as a semiconductor wafer and forming wiring. Also in this case, the polishing pad 16 1 Removably attach to the surface of c with a double-sided tape or adhesive, etc. If the polishing ability of the polishing pad 16 decreases, replace only the polishing pad 16.

FIG. 10 is a side sectional view showing still another example of the configuration of the table section of the chemical mechanical polishing (CMP) apparatus according to the present invention. Here, the table is composed of a belt 31 suspended on pulleys 29, 30. An elastic sheet 11D is attached on the upper surface of the belt 31 and further, on the upper surface of the elastic sheet 11D. The polishing pad 16 is detachably attached with a double-sided tape or an adhesive. As the elastic sheet 11D, one having the same structure as that shown in FIGS. 3 and 9 can be used. The pulley 29 rotates in the direction of the arrow C in a mode not shown, and the belt 31 moves in the direction of the arrow D.

The substrate to be polished W held by the substrate to be polished holding mechanism (top ring, etc.) 32 is placed on the polishing pad 16 which is adhered to the upper surface of the belt 31 via the elastic sheet 11 D as described above. The substrate to be polished W is polished by pressing and rotating the substrate to be polished holding mechanism 32 in the direction of arrow D. Also in this case, if the polishing ability of the polishing pad 16 is reduced, only the polishing pad 16 is replaced. As described above, the same operation and effect can be obtained even if the table part of the chemical mechanical polishing (CMP) apparatus is of a belt type (linear type).

As described above, in the embodiment of FIGS. 1, 2, 3, 8, 9, and 10, the elastic sheet 11 (11A to 11D) that is deformed by pressure is applied to the lower layer member. In Fig. 4, Fig. 5, Fig. 6 and Fig. 7, in the lower layer mechanism, the sheet layer 19 displaced by the pressing force of the fluid chamber 20 (pressurizing chamber 1) or the sheet layer 19 and the piston 2 Table 4 shows the function of the lower layer pad of the two-layer polishing pad used in conventional chemical mechanical polishing (CMP) equipment, and if the polishing capability of the polishing pad 16 is reduced, Since only the polishing pad 16 is replaced, the cost of the chemical mechanical polishing (CMP) process can be reduced, and the process performance such as the uniformity of the polishing rate in the surface of the substrate to be polished can be stabilized.

In addition, the present invention is not limited to the above-described embodiment. In short, the present invention includes a lower layer member that is deformed in response to pressure provided on the table upper surface or a polishing pad attached to a lower layer mechanism, and the polishing pad is a lower layer member. Alternatively, it is only necessary that it can be replaced on the lower layer mechanism. In other words, the lower layer of a two-layer polishing pad used in conventional chemical mechanical polishing (CMP) equipment The table may have the function performed by the pad, and the polishing pad may be replaced if the polishing ability of the polishing pad is reduced.

Claims

The scope of the claims

1. An object holding mechanism for holding an object to be polished, and a table having a polished surface, wherein the object to be polished held by the object to be polished is pressed against the polished surface of the table. In a polishing apparatus for polishing the object to be polished by relative movement between the object to be polished held by the object holding mechanism and the polishing surface of the table,

A polishing apparatus, wherein an elastic sheet is stretched on the upper surface of the table, and a polishing pad having a polishing surface on the upper surface is replaceably stretched on the elastic sheet.

2. The polishing apparatus according to claim 1, wherein the elastic sheet has a plurality of protrusions on a surface.

3. An object holding mechanism for holding an object to be polished, and a table having a polished surface, wherein the object to be polished held by the object holding mechanism is pressed against the polished surface of the table. In a polishing apparatus for polishing the object to be polished by the relative movement between the object to be polished held by the object holding mechanism and the polishing surface of the table,

A concave portion is provided on the upper surface of the table, a fluid chamber is formed by covering an opening of the concave portion with an elastic sheet, and the fluid chamber is filled with a fluid of a predetermined pressure, and a polishing surface is provided on the upper surface of the elastic sheet. A polishing apparatus, wherein a polishing pad is stretched so as to be replaceable.

4. The polishing apparatus according to claim 3,

A polishing apparatus, wherein a fluid supply unit for supplying a fluid to the fluid chamber is provided, and the elastic sheet can be deformed in accordance with a supply pressure of the fluid supplied from the fluid supply unit. .

5. The polishing apparatus according to claim 4,

The polishing apparatus, wherein the fluid supply unit includes a flow path for supplying a fluid and a fluid source, and the fluid source includes a control unit for controlling a supply pressure of the fluid.

6. The polishing apparatus according to claim 5,

The table further includes a plurality of pistons between the elastic sheet and the polishing pad, and a piston guide plate for restricting a direction of movement of the piston, wherein the piston is moved by the piston guide plate. A polishing apparatus, wherein the polishing apparatus is guided so as to move in a direction perpendicular to a polishing surface of the polishing pad according to deformation of a sheet.

7. An object holding mechanism for holding an object to be polished, and a table having a polishing surface, wherein the object to be polished held by the object holding mechanism is pressed against the polishing surface of the table, and In a polishing apparatus for polishing the object to be polished by relative movement between the object to be polished held by the object holding mechanism and the polishing surface of the table,

An elastic sheet having a plurality of concave portions is stretched on the upper surface of the table so as to seal a fluid between the upper surface of the table and the upper surface of the table, and a polishing pad having a polishing surface on the upper surface of the elastic sheet is replaceable. A polishing apparatus characterized by being stretched.

8. An object holding mechanism for holding an object to be polished, and a table having a polishing surface, wherein the object to be polished held by the object holding mechanism is pressed against the polishing surface of the table, and In a polishing apparatus for polishing the object to be polished by relative movement between the object to be polished held by the object holding mechanism and the polishing surface of the table,

The table is constituted by a belt suspended between pulleys, an elastic sheet is stretched on the belt upper surface, and a polishing pad having a polishing surface on the upper surface is replaceably stretched on the elastic sheet. A polishing apparatus characterized in that: