WO2004008471A1 - Dispositif d'affichage d'images, procede de fabrication de dispositif d'affichage d'images et dispositif de fabrication - Google Patents

Dispositif d'affichage d'images, procede de fabrication de dispositif d'affichage d'images et dispositif de fabrication Download PDF

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Publication number
WO2004008471A1
WO2004008471A1 PCT/JP2003/008929 JP0308929W WO2004008471A1 WO 2004008471 A1 WO2004008471 A1 WO 2004008471A1 JP 0308929 W JP0308929 W JP 0308929W WO 2004008471 A1 WO2004008471 A1 WO 2004008471A1
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WO
WIPO (PCT)
Prior art keywords
substrate
sealing layer
front substrate
image display
rear substrate
Prior art date
Application number
PCT/JP2003/008929
Other languages
English (en)
Japanese (ja)
Inventor
Hisakazu Okamoto
Tsukasa Ooshima
Akiyoshi Yamada
Takashi Enomoto
Masahiro Yokota
Takashi Nishimura
Hirotaka Unno
Hiroharu Takezawa
Original Assignee
Kabushiki Kaisha Toshiba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Toshiba filed Critical Kabushiki Kaisha Toshiba
Priority to KR1020047020410A priority Critical patent/KR100686668B1/ko
Priority to EP03741381A priority patent/EP1542255A1/fr
Priority to JP2005505099A priority patent/JPWO2004008471A1/ja
Publication of WO2004008471A1 publication Critical patent/WO2004008471A1/fr
Priority to US11/035,322 priority patent/US20050179360A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/20—Constructional details
    • H01J11/48—Sealing, e.g. seals specially adapted for leading-in conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/86—Vessels; Containers; Vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/90—Leading-in arrangements; Seals therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/92—Means forming part of the tube for the purpose of providing electrical connection to it
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/26—Sealing together parts of vessels
    • H01J9/261—Sealing together parts of vessels the vessel being for a flat panel display

Definitions

  • Image display device method of manufacturing image display device, and manufacturing device
  • the present invention relates to a flat-type image display device having substrates arranged to face each other, a method for manufacturing an image display device, and a device for manufacturing an image display device.
  • CRTs cathode ray tubes
  • image display devices include a liquid crystal display (hereinafter, referred to as an LCD) that controls the intensity of light by using the orientation of liquid crystal, and a plasma display that emits phosphors using ultraviolet light of plasma discharge.
  • Panels hereinafter referred to as PDPs
  • FEDs field emission displays
  • SEDs surface-conduction electron emission displays
  • FEDs and SEDs generally have a front substrate and a rear substrate that are opposed to each other with a predetermined gap, and these substrates are joined to each other through a rectangular frame-shaped side wall. And constitute a vacuum envelope.
  • a phosphor screen is formed on the inner surface of the front substrate, and a number of electron-emitting devices are provided on the inner surface of the rear substrate as electron emission sources for exciting the phosphor to emit light.
  • a plurality of support members are disposed between these substrates. The potential on the back substrate side is almost the ground potential, and the anode voltage Va is applied to the phosphor screen.
  • the red, green, and blue phosphors that make up the phosphor screen are irradiated with the electron beam emitted from the emitter, and the phosphors emit light to display images.
  • the thickness of the display device can be reduced to about several mm, and it can be compared with CRTs used as displays for televisions and computers today. As a result, the weight and the thickness can be reduced.
  • Japanese Patent Application Laid-Open No. 2000-220980 and Japanese Patent Application Laid-Open No. 2001-210258 Discloses a method of performing final assembly of a front substrate and a rear substrate constituting an envelope in a vacuum chamber.
  • the front substrate and the rear substrate brought into the vacuum chamber are sufficiently heated. This is to reduce the gas release from the inner wall of the envelope, which is the main cause of the deterioration of the envelope vacuum.
  • a getter film for improving and maintaining the vacuum degree of the envelope was placed on the phosphor screen. Form.
  • the front substrate and the rear substrate are heated again to a temperature at which the sealing material melts, and the front substrate and the rear substrate are heated. Cool in a state where the sealing material is solidified in a state where the sealing material is combined with the predetermined position.
  • the vacuum envelope made by such a method can perform both the sealing process and the vacuum sealing process, does not require much time for evacuation, and can obtain an extremely good degree of vacuum. And can be.
  • As a sealing material it is desirable to use a low-melting-point material suitable for sealing and sealing batch processing.
  • the processes performed in the sealing process include heating, positioning, and cooling, and the sealing material melts and solidifies for a long time.
  • the front substrate and the rear substrate must be kept in place.
  • problems in productivity and characteristics associated with sealing such as that the front substrate and the rear substrate are thermally expanded due to heating and cooling at the time of sealing, and alignment accuracy is likely to deteriorate.
  • a method in which a conductive sealing material such as indium is energized, and the conductive sealing material itself is heated and melted by Joule heat to bond the substrates (hereinafter referred to as energizing heating and ) Are being considered.
  • energizing heating and it is not necessary to spend an enormous amount of time for cooling the substrate, and the envelope can be vacuum-sealed in a short time and with a simple device. That is, by using a conductive sealing material, it is possible to selectively heat only the sealing material having a small heat capacity without heating the substrate, and to deteriorate the positional accuracy due to the thermal expansion of the substrate. Can be suppressed.
  • the heat capacity of the sealing material is very small compared to the heat capacity of the substrate, it requires more heating and cooling than the method of heating the entire substrate. Time and time can be greatly reduced, and mass productivity can be greatly improved.
  • the present invention has been made in view of the above points, and an object of the present invention is to provide a method of manufacturing an image display device and a manufacturing device capable of performing a sealing operation quickly and stably. And.
  • an image display device includes a front substrate, and a back substrate disposed opposite to the front substrate, wherein a sealing layer containing a conductive sealing material is provided.
  • a sealing layer containing a conductive sealing material is provided.
  • a method of manufacturing an image display device includes an image display device including an envelope having a front substrate and a rear substrate, which are arranged to face each other and whose peripheral portions are joined to each other. The method of manufacturing
  • a sealing material having conductivity is arranged to form a sealing layer, and an electrode is attached to at least one of the front substrate and the rear substrate on which the sealing layer is formed, and the sealing is performed.
  • an electric current is applied to the sealing layer through the electrode, and the sealing layer is heated and melted to thereby surround the front substrate and the rear substrate. Join the parts together.
  • the image display device includes an electrode that is previously attached to the envelope and is electrically connected to the sealing layer, and is sealed through the electrode.
  • the envelope is constructed by heating the deposited layer with electric current. Therefore, a stable current can be applied to the sealing layer formed of the conductive sealing material, and the sealing operation of the image display device can be quickly and stably performed.
  • FIG. 1 is a perspective view showing the entire FED according to the first embodiment of the present invention.
  • FIG. 2 is a perspective view showing the internal configuration of the FED.
  • FIG. 3 is a cross-sectional view taken along line III-III in FIG.
  • FIG. 4 is an enlarged plan view showing a part of the phosphor screen of the FED.
  • FIG. 5 is a perspective view showing the FED electrode.
  • 6A and 6B are plan views respectively showing a front substrate and a rear substrate used for manufacturing the FED.
  • FIG. 7 is a perspective view showing a state in which electrodes are attached to the rear substrate of the FED.
  • FIG. 8 is a cross-sectional view showing a state in which a rear substrate and a front substrate, each having indium disposed in the sealing portion, are opposed to each other.
  • FIG. 9 is a diagram schematically showing a vacuum processing apparatus used for manufacturing the FED.
  • FIG. 10 is a plan view schematically showing a state in which a power supply is connected to an electrode of the FED in the FED manufacturing process.
  • FIG. 11 is a perspective view showing a part of an FED according to a second embodiment of the present invention.
  • FIG. 12A and FIG. 12B are cross-sectional views showing the manufacturing process of the FED according to the second embodiment.
  • FIG. 13 is a plan view schematically showing a state in which a power supply is connected to an electrode of the FED in a process of manufacturing the FED according to the third embodiment of the present invention.
  • FIG. 14A and FIG. 14B are cross-sectional views showing the manufacturing process of the FED according to the third embodiment.
  • FIG. 15 is a perspective view showing the entire FED according to the fourth embodiment of the present invention.
  • Figure 16 is a cross-sectional view of Figure 15 taken along line XVI—XVI.
  • FIG. 17 is a perspective view showing the FED electrode.
  • FIG. 18A and FIG. 18B are plan views respectively showing a front substrate and a rear substrate used for manufacturing the FED.
  • FIG. 19 is a cross-sectional view showing a state in which the rear substrate and the front substrate on which indium is arranged are opposed to each other.
  • FIG. 20 is a cross-sectional view showing a modification of the electrode in the fourth embodiment.
  • FIG. 21 is a perspective view showing another modification of the electrode in the fourth embodiment.
  • FIG. 22 is a cross-sectional view showing another modified example of the fourth embodiment.
  • FIG. 23 is a perspective view showing the entire FED according to the fifth embodiment of the present invention.
  • FIG. 24 is a cross-sectional view along the line XXIV-XXIV of FIG.
  • FIG. 25 is a perspective view showing an FED electrode according to the fifth embodiment.
  • FIG. 26 is a cross-sectional view showing an electrode according to a modification of the fifth embodiment.
  • FIG. 27 is a perspective view showing an electrode according to another modification of the fifth embodiment.
  • FIG. 28 is a cross-sectional view showing an electrode according to another modification of the fifth embodiment.
  • FIG. 29 is a perspective view showing an electrode according to still another modification of the fifth embodiment.
  • FIG. 30 is a perspective view showing an FED according to a sixth embodiment of the present invention.
  • FIG. 31A is a plan view showing a front substrate used for manufacturing the above-mentioned FED.
  • FIG. 31B is a plan view showing a back substrate, side walls, and spacers used for manufacturing the above-mentioned FED.
  • FIG. 32 is a cross-sectional view showing a step of sealing the front substrate and the side wall in the manufacturing method according to the sixth embodiment.
  • FIG. 33 is a plan view showing a modification of the electrode in the sixth embodiment.
  • FIG. 34A and FIG. 34B are plan views each showing another modified example of the electrode in the sixth embodiment.
  • FIG. 35 is a cross-sectional view showing the method of manufacturing the FED according to the seventh embodiment of the present invention.
  • FIG. 36 is a cross-sectional view showing a sealing step using an electrode according to a modification of the seventh embodiment.
  • FIG. 37 is a cross-sectional view showing the method of manufacturing the FED according to the eighth embodiment of the present invention.
  • FIG. 38 is a cross-sectional view showing a state where electrodes are inserted between the substrates in the eighth embodiment.
  • FIG. 39 is a cross-sectional view showing a state where both substrates are pressed in a direction approaching each other in the eighth embodiment.
  • FIG. 40 is a cross-sectional view showing a method of manufacturing an FED according to a ninth embodiment of the present invention.
  • FIG. 41 is a cross-sectional view showing a state where an electrode is brought into contact with a welded portion of a sealing layer in the ninth embodiment.
  • FIG. 42 is a perspective view showing the entire FED according to the tenth embodiment of the present invention.
  • Figure 43 is a cross-sectional view along the line XLIII—XLIII of Figure 42.
  • FIG. 44 is a perspective view showing the FED electrode according to the tenth embodiment.
  • FIG. 45 is a perspective view showing a state where electrodes are attached to a rear substrate in the tenth embodiment.
  • FIG. 46 is a cross-sectional view showing a state where the rear substrate and the front substrate on which the sealing layer is disposed are arranged to face each other in the tenth embodiment.
  • FIG. 47 is a cross-sectional view showing a state in which the back substrate and the front substrate are pressed in a direction approaching each other in the tenth embodiment, and the contact portions of the electrodes are sandwiched between sealing layers.
  • FIG. 48 is a perspective view showing an electrode according to a modification of the tenth embodiment.
  • FIG. 49 is a perspective view showing an electrode according to another modification in the tenth embodiment.
  • FIG. 50 is a perspective view showing an electrode according to still another modification of the tenth embodiment.
  • FIG. 51 is a cross-sectional view showing an electrode according to another modification of the tenth embodiment.
  • FIG. 52 is a cross-sectional view showing a state in which the rear substrate and the front substrate on which indium is arranged are opposed to each other in a modification of the tenth embodiment.
  • FIG. 53 is a cross-sectional view showing a state in which the rear substrate and the front substrate on which an indicator is arranged are opposed to each other in another modification of the tenth embodiment.
  • FIG. 54 is a perspective view showing an electrode according to a modification of the tenth embodiment.
  • FIG. 55 is a cross-sectional view showing a step of removing an electrode in the first embodiment of the present invention.
  • FIG. 56 is a cross-sectional view showing a step of removing an electrode in the eleventh embodiment.
  • FIG. 57 is a perspective view showing the FED with the electrodes removed in the first embodiment.
  • FIG. 58 is a cross-sectional view showing the FED with the electrodes removed in the eleventh embodiment.
  • FIG. 59 is a cross-sectional view showing a step of removing an electrode in the modification of the first embodiment.
  • FIG. 60 is a cross-sectional view showing a step of removing an electrode in another modification of the eleventh embodiment.
  • FIG. 61A to FIG. 61E are plan views respectively showing modified examples of the concave portion formed in the sealing layer of FED in the first embodiment.
  • FIG. 62 is a cross-sectional view showing a step of cutting an electrode in the first embodiment of the present invention.
  • FIG. 63 is a cross-sectional view showing a step of removing the cut electrode in the first embodiment.
  • FIG. 64 is a cross-sectional view showing an FED according to a thirteenth embodiment of the present invention.
  • FIG. 65 is a perspective view showing a state where an electrode is mounted on the rear substrate in the thirteenth embodiment.
  • FIG. 66 is a cross-sectional view showing the manufacturing apparatus according to the thirteenth embodiment.
  • FIG. 67 is a perspective view schematically showing the manufacturing apparatus.
  • FIG. 68 is a cross-sectional view showing a manufacturing apparatus according to a modification of the thirteenth embodiment.
  • the FED has a front substrate 11 and a rear substrate 12 each made of a rectangular glass plate, and these substrates are separated by a gap of 1 to 2 mm. They are arranged facing each other.
  • the front substrate 11 and the rear substrate 12 are joined to each other via a rectangular frame-shaped side wall 18 to form a flat rectangular vacuum envelope 10 whose inside is maintained in a vacuum. Make up.
  • a plurality of plate-like support members 14 are provided to support the atmospheric pressure load applied to the front substrate 11 and the rear substrate 12.
  • the support members 14 extend in a direction parallel to one side of the vacuum envelope 10 and are arranged at predetermined intervals along a direction orthogonal to the one side. ing.
  • the support member 14 is not limited to the plate shape, and may be a columnar shape.
  • a phosphor screen 16 functioning as an image display surface is formed.
  • the phosphor screen 16 is composed of phosphor layers R, G, and B of red, green, and blue, and a light absorbing layer 20 positioned between these phosphor layers.
  • R, G, and B extend in a direction parallel to the one side of the vacuum envelope 10 and are arranged at predetermined intervals along a direction orthogonal to the one side. .
  • the light absorbing layer 20 is provided around the phosphor layers R, G, and B.
  • a metal knock 17 made of aluminum force and a getter film 13 are sequentially deposited. As shown in FIG.
  • the electron-emitting device 22 is provided on the inner surface of the rear substrate 12, there are a number of electron emission sources for exciting the phosphor layers of the phosphor screen 16, each emitting an electron beam.
  • the electron-emitting device 22 is provided. These electron-emitting devices 22 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel. Specifically, a conductive force layer 24 is formed on the inner surface of the back substrate 12, and a silicon dioxide having a large number of cavities 25 is formed on the conductive force layer. A film 26 is formed. A gate electrode 28 made of molybdenum, niobium, or the like is formed on the silicon dioxide film 26. A cone-shaped electron-emitting device 22 made of molybdenum or the like is provided in each cavity 25 on the inner surface of the rear substrate 12.
  • a video signal is input to the electron-emitting device 22 and the gate electrode 28 formed in a simple matrix system.
  • a gate voltage of +100 V is applied when the luminance is the highest.
  • +10 kV is applied to the phosphor screen 16 with a printing force B.
  • an electron beam is emitted from the electron-emitting device 22.
  • the size of the electron beam emitted from the electron-emitting device 22 is modulated by the voltage of the gate electrode 28, and this electron beam excites the phosphor layer of the phosphor screen 16.
  • the image is displayed by emitting light.
  • Front board 1 Since a high voltage is applied to the phosphor screen 16, a high strain point glass is formed on the glass plates for the front substrate 11, the rear substrate 12, the side walls 18, and the support members 14. It is used. See below As described above, the space between the rear substrate 12 and the side wall 18 is sealed with a low-melting glass 19 such as a frit glass.
  • Front board 1 Since a high voltage is applied to the phosphor screen 16, a high strain point glass is formed on the glass plates for the front substrate 11, the rear substrate 12, the side walls 18, and the support members 14. It is used. See below As described above, the space between the rear substrate 12 and the side wall 18 is sealed with a low-melting glass 19 such as a frit glass.
  • the gap between 1 and the side wall 18 is sealed by a sealing layer 21 containing indium (In) as a low-melting sealing material having conductivity.
  • the FED includes a plurality of, for example, a pair of electrodes 30, and these electrodes are attached to the envelope 10 in a state of being electrically connected to the sealing layer 21. These electrodes 30 are used as electrode members when energizing the sealing layer 21.
  • each electrode 30 serves as a conductive member, for example.
  • the electrode 30 is bent so as to have a substantially U-shaped cross-section, and is formed into a flat first plate portion 3 by machining a copper plate having a thickness of 0.2 mm. 3a, the second plate portion 33b opposed to the first plate portion with a gap therebetween, and the first and second plate portions extend at substantially right angles, and the first and second plate portions 33b extend at substantially right angles. It has a conducting portion 38 that connects the edges of the two plates at the same time. 1st plate 3
  • 3ba has first and second contact portions 36a and 36b which are electrically connected to the sealing layer 21 respectively.
  • a slit 45 is formed between 6a and 36b, and the second contact portion is formed.
  • each electrode 30 is attached to the vacuum envelope 10 while being elastically engaged with the back substrate 12 and the side wall 18, for example. . That is, the electrode 30 is
  • the vacuum envelope 1 Fixed to 0.
  • the first and second contact portions 36a and 36b of the first plate portion 33a are in contact with the sealing layer 21 and are electrically conductive.
  • the conducting portion 38 of the electrode 30 faces the side surface and the side wall 18 of the back substrate 12 and is exposed outside the vacuum envelope 10.
  • the pair of electrodes 30 are provided at two diagonally separated corners of the vacuum envelope 10, respectively, and are arranged symmetrically with respect to the sealing layer 21.
  • a phosphor screen 16 is formed on a plate glass serving as the front substrate 11.
  • a plate glass having the same size as the front substrate 11 is prepared, and a phosphor strip pattern is formed on the plate glass by a plotter machine.
  • the plate glass on which the phosphor stripe pattern is formed and the plate glass for the front substrate are placed on a positioning jig and set on an exposure table.
  • the phosphor stripe pattern is exposed and developed, so that a phosphor screen is generated on a glass plate serving as the front substrate 11.
  • a metal back 17 is formed on the phosphor screen 16 to form the metal back 17.
  • an electron-emitting device 22 is formed on the glass plate for the rear substrate 12.
  • An insulating film of a silicon film is formed.
  • a metal film for forming a gate electrode such as molybdenum or niobium is formed on the insulating film by, for example, a sputtering method or an electron beam evaporation method.
  • a resist pattern having a shape corresponding to the gate electrode to be formed is formed on the metal film by lithography. Using the resist pattern as a mask, the metal film is etched by a wet etching method or a dry etching method to form a gate electrode 28.
  • the insulating film is etched by a wet or dry etching method using the resist pattern and the gate electrode 28 as a mask to form a cavity 25.
  • electron beam evaporation is performed from a direction inclined at a predetermined angle with respect to the surface of the rear substrate 12, thereby forming, for example, aluminum or nickel on the gate electrode 28.
  • a release layer is formed.
  • molybdenum is vapor-deposited as a material for forming a force source from a direction perpendicular to the rear substrate surface by an electron beam vapor deposition method.
  • the electron-emitting device 22 is formed inside the cavity 25.
  • the release layer and the metal film formed thereon are removed by a lift-off method. Subsequently, the side wall 18 and the support member 14 are sealed in the atmosphere on the inner surface of the back substrate 12 with the low melting point glass 19.
  • an adhesive is applied to a predetermined width and thickness over the entire periphery of the sealing surface of the side wall 18 to form a sealing layer 21a.
  • indium is applied to the sealing surface facing the side wall of the front substrate 11 in a rectangular frame with a predetermined width and thickness to form a sealing layer 21b.
  • the filling of the sealing layers 21a and 21b with respect to the sealing surface of the side wall 18 and the front substrate 11 is performed by applying molten indium to the sealing surface as described above.
  • the method is carried out by placing indium in a solid state on a sealing surface.
  • a pair of electrodes 30 is mounted on the back substrate 12 to which the side walls 18 are joined.
  • the first contact portion 36a of each electrode 30 is brought into contact with the sealing layer 21a on the side wall 18 to electrically connect the electrode to the sealing layer.
  • solder between the sealing layer 21a and the first contact portion 36a must be soldered in advance. Is also effective.
  • the electrode 30 requires a pair of a positive electrode and a single electrode on the substrate, and it is desirable that the length of current flowing from each electrode to the sealing layers 21a and 21b be equal. Therefore, a pair of electrodes 30 is attached to two diagonally opposite corners of the rear substrate 12, and the length of the sealing layers 21 a and 21 b located between the electrodes is It is set almost equally on both sides of.
  • the vacuum processing apparatus 100 includes a load chamber 101, a baking, electron beam cleaning chamber 102, a cooling chamber 103, a getter film deposition chamber 104, and an assembling chamber. 105, cooling room 106 and unloading room 107 are provided.
  • the assembly room 105 is connected to a DC power supply 120 for energization and a computer 122 for controlling the power supply.
  • Each chamber of the vacuum processing apparatus 100 is configured as a processing chamber capable of performing vacuum processing, and all the chambers are evacuated during the manufacture of the FED.
  • Each of these The rooms are connected by a gate valve (not shown).
  • the above-mentioned front substrate 11 and rear substrate 12 arranged at a predetermined interval are first loaded into a load chamber 101, and after the load chamber 101 is evacuated to a vacuum atmosphere, baking and electron beams are performed. It is sent to the washing room 102.
  • each member is heated to a temperature of 300 ° C. to release the surface adsorbed gas on the side wall of each substrate.
  • baking and electron beams are emitted from an electron beam generator (not shown) provided in the electron beam cleaning room 102, and are emitted from the phosphor screen surface of the front substrate 11 and the rear substrate 12 Irradiate the element surface.
  • the entire surface of the phosphor screen and the entire surface of the electron-emitting device are cleaned by deflecting and scanning the electron beam by a deflecting device mounted outside the electron beam generator. .
  • the front substrate 11 and the rear substrate 12 that have been subjected to the heating and the electron beam cleaning are sent to a cooling chamber 103 and cooled to a temperature of about 120 ° C.
  • a Ba film is vapor-deposited as a getter film outside the phosphor layer. The surface of the Ba film is prevented from being contaminated with oxygen, carbon, or the like, and can maintain an active state.
  • the front substrate 11 and the rear substrate 12 are sent to the assembly room 105.
  • the front substrate 11 and the rear substrate 12 were moved in a direction approaching each other while maintaining the temperature at about 120 ° C.
  • the second contact portion 36b of the first substrate is brought into contact with the sealing layer 21b on the front substrate 11 side. to this Thus, each electrode 30 is electrically connected to the sealing layer 2 lb.
  • the second contact portion 36b is elastically pressed against the sealing layer 21b by the spring pressure, so that stable conductivity can be secured.
  • the sealing layer 21 a on the side wall 18 side and the sealing layer 21 a on the front substrate 11 side are formed. Electricity is applied to each of the bonding layers 21b to heat the sealing layer to melt the indium.
  • the connection terminal 40 connected to the power supply 120 into contact with the conducting portion 38 of the electrode 30, the power supply and the electrode, and the electrode and the sealing layer 21 a, 21 b and can be reliably conducted.
  • the front substrate 11 and the rear substrate 12 are pressed in a direction approaching each other.
  • the sealing layers 2 la and 2 lb are fused to form the sealing layer 21, and the peripheral portion of the front substrate 11 and the side wall 18 are sealed by the sealing layer.
  • the vacuum envelope 10 formed by the above process is cooled to room temperature in the cooling chamber 106 and taken out of the unload chamber 107. This completes the FED vacuum envelope.
  • the electrode 30 may be cut off if necessary.
  • the electrode 30 for supplying electricity to the sealing layer 21 was previously mounted on the envelope and electrically connected to the sealing layer. Therefore, a stable current can be applied to the sealing layer 21 via the electrode 30 during the heating by energization. Therefore, at the time of sealing, the sealing layer The conductive low melting point sealing material to be formed can be stably and reliably melted in a predetermined energizing time, and as a result, the sealing layer 21 can be quickly and surely not cracked. Sealing can be performed.
  • the surface adsorbed gas can be sufficiently released by using both baking and electron beam cleaning, and the getter film has excellent adsorption capacity. Can be obtained.
  • the indium is sealed and joined by energizing and heating, there is no need to heat the entire front and back substrates, and the getter film is deteriorated. The substrate is broken during the sealing process. And the like can be eliminated, and at the same time, the sealing time can be shortened.
  • each electrode is configured to include the first contact portion that is conductive to the sealing layer on the side wall and the second contact portion that is conductive to the sealing layer on the front substrate side.
  • the electrode 30 is provided with a single contact portion 36a.
  • the pair of electrodes 30 are mounted on a pair of diagonally opposite corners of the rear substrate 12, respectively, and are attached to the envelope while elastically holding the side wall 18 and the rear substrate 12. It is attached.
  • each contact portion 36a is in contact with the upper surface of the sealing layer 21a and is electrically connected to the sealing layer.
  • the front substrate 11 on which the sealing layer 2 1 b is formed is arranged to face the rear substrate 12, so that the contact portions 36 a of the respective electrodes 30 form the sealing layer 2 1. Both a and 2 lb are in contact and electrically connected. Then, the sealing layers 2 la and 2 lb can be simultaneously energized through these electrodes 30 to heat and melt the indium.
  • each electrode 30 may be mounted and fixed to the front substrate side.
  • the FED is a pair of first conductive members for supplying electricity to the sealing layer 21 a formed on the side wall 18. It includes an electrode 30 a and a pair of second electrodes 30 b for supplying electricity to the sealing layer 21 b formed on the front substrate 11.
  • the first and second electrodes 30a and 30b are formed in a clip shape almost in the same manner as the above-described electrode 30.However, each electrode has one contact portion 36. Has become.
  • the pair of first electrodes 30 a are mounted on a pair of diagonally opposite corners of the rear substrate 12, respectively, and are attached while elastically sandwiching the side wall 18 and the rear substrate 12. ing. At this time, each of the first electrodes 30a is electrically connected to the sealing layer with its contact portion 36 in contact with the sealing layer 21a.
  • the pair of second electrodes 3 Ob is formed on a pair of corners of the front substrate 11 opposite to each other in a diagonal direction. Each is mounted and attached with the front substrate elastically sandwiched. At this time, each of the second electrodes 3 Ob has a first electrode 30 a and a second electrode 30 whose contact portions 36 are in contact with the sealing layer 21 b and are electrically connected to the sealing layer. It is desirable that b be divided into four corners without overlapping each other.
  • the pair of connection terminals 40 a connected to the power supply 120 are brought into contact with the conductive portions 38 of the first electrode 30 a, respectively. Then, the power supply and the first electrode, and the first electrode and the sealing layer 2 la are electrically connected. Further, the pair of connection terminals 4 O b connected to the power supply 120 are brought into contact with the conducting portions 38 of the second power 30 b, respectively, so that the power supply and the second electrode, and the second electrode and the sealing layer 2 Make lb conductive. In this state, current is applied to each of the sealing layer 21a on the side wall 18 and the sealing layer 21b on the front substrate 11 to heat the sealing layer and melt the indium. Thereafter, as shown in FIG.
  • the front substrate 11 and the rear substrate 12 are pressed in a direction approaching each other, whereby the sealing layers 21 a and 21 b are fused and sealed.
  • the adhesion layer 21 is formed, and the peripheral portion of the front substrate 11 and the side wall 18 are sealed by the sealing layer.
  • the other configuration is the same as that of the above-described first embodiment, and the same portions are denoted by the same reference numerals and detailed description thereof will not be repeated.
  • the same operation and effect as those of the first embodiment can be obtained.
  • the current flowing through the sealing layer 21a on the rear substrate 12 side and the sealing layer 21b on the front substrate 11 side are individually , And more appropriate energization heating can be performed.
  • the FED includes a vacuum envelope 10 and a plurality of, for example, a pair of electrodes 30 attached to the vacuum envelope.
  • the vacuum envelope 10 includes a front substrate 11 and a rear substrate 12 each made of a rectangular glass plate, and these substrates 11 and 12 are arranged at a peripheral portion through a rectangular frame-shaped side wall 18. Are joined together.
  • a phosphor screen 16, a metal back 17, and a getter film 13 are formed on the inner surface of the front substrate 11.
  • a number of electron-emitting devices 22 for exciting the phosphor layer of the phosphor screen 16 are provided.
  • a large number of wirings 23 for supplying a potential to the electron-emitting devices 22 are provided in a matrix on the inner surface of the rear substrate 12, and the ends of the wirings 23 are provided at the ends of the vacuum envelope 10. It is drawn out to the periphery.
  • the pair of electrodes 30 is attached to the envelope 10 in a state of being electrically connected to the sealing layer 21. These electrodes 30 are used as electrodes when energizing the sealing layer 21.
  • Each electrode 30 is formed by bending a copper plate having a thickness of, for example, 0.2 mm as a conductive member. That is, the electrode 30 is bent so as to have a substantially U-shaped cross-section, and is a clip-like mounting that can be attached to a peripheral portion of the front substrate 11 or the rear substrate 12.
  • a contact portion 36 located at the extended end of the body portion and a flat conducting portion 38 formed by the mounting portion and the back portion of the body portion are integrally provided.
  • the contact portion 36 has a horizontal extension L of 2 mm or more. Further, the body portion 34 is formed in a band shape, and extends obliquely upward and outward from the contact portion 36. As a result, the body portion 34 forms the outflow regulating portion 37 positioned higher than the contact portion 36 along the vertical direction.
  • Each electrode 30 is attached in a state of being elastically engaged with, for example, a back substrate 12 of the vacuum envelope 10. That is, the electrode 30 is attached to the vacuum envelope 10 in a state where the peripheral portion of the rear substrate 12 is elastically held by the attachment portion 32.
  • the contact portion 36 of each electrode 30 is in contact with the sealing layer 21 and is electrically conductive.
  • the body 34 extends from the contact portion 36 to the outside of the vacuum envelope 10, and the outflow regulating portion 37 is located vertically higher than the contact portion 36. are doing.
  • the conduction portion 38 is exposed on the outer surface of the vacuum envelope 10 so as to face the side surface of the rear substrate 12.
  • the pair of electrodes 30 are provided at two diagonally separated corners of the vacuum envelope 10, respectively, and are arranged symmetrically with respect to the sealing layer 21.
  • the other configuration of the FED is the same as that of the above-described first embodiment, and the same portions are denoted by the same reference characters and will not be described in detail.
  • a method of manufacturing the above FED will be described in detail.
  • This manufacturing method is almost the same as the manufacturing method according to the first embodiment, and different portions will be mainly described.
  • a front substrate 11 on which a phosphor screen and a metal back 17 are formed, and a rear substrate 12 on which electron-emitting devices 22 are formed are prepared.
  • the side wall 18 and the support member 14 are sealed on the inner surface of the rear substrate 12 with the low melting point glass 19 in the atmosphere.
  • indium is applied to a predetermined width and thickness over the entire periphery of the sealing surface of the side wall 18 to form a sealing layer 21a.
  • a sealing layer 21b is formed by applying an image in a rectangular frame shape with a predetermined width and thickness to a sealing surface facing the side wall of the front substrate 11.
  • the filling of the sealing layers 21a and 21 with respect to the side walls 18 and the sealing surface of the front substrate 11 may be performed by applying molten indium to the sealing surface as described above, or This is performed by a method of placing indium in a solid state on a sealing surface.
  • a pair of electrodes 30 is mounted on the back substrate 12 to which the side walls 18 are joined.
  • the electrode is electrically connected to the sealing layer by bringing the contact portion 36 of each electrode 30 into contact with the sealing layer 2 la on the side wall 18.
  • the pair of electrodes 30 is mounted on two diagonally opposite corners of the back substrate 12, and the length of the sealing layers 21 a and 21 b located between the electrodes is equal to the length of each electrode. Almost equal on both sides.
  • the rear substrate 12 and the front substrate 11 are arranged facing each other with a predetermined interval therebetween, and in this state, are put into the vacuum processing apparatus 100 shown in FIG.
  • the front substrate 11 and the rear substrate 12 are baked through the loading chamber 101 and sent to the electron beam cleaning chamber 102. Baking, electron beam cleaning room 102, each The seed member is heated to a temperature of 300 ° C. to release gas adsorbed on the surface of each substrate.
  • an electron beam is irradiated from the electron beam generator onto the phosphor screen surface of the front substrate 11 and the electron-emitting device surface of the rear substrate 12 so that the phosphor screen surface and the electrons are emitted.
  • the entire surface of the emission element surface is cleaned with an electron beam.
  • each electrode 30 is provided with an outflow restricting portion 37 positioned higher than the contact portion 36, the outflow restricting portion allows molten indium to flow outside the back substrate. Can be suppressed.
  • the front substrate 11 and the rear substrate 12 are sent to a cooling chamber 103, cooled to a temperature of about 120 ° C., and then sent to a getter film deposition chamber 104, where the phosphor B a film is deposited forming the outer layer.
  • the front substrate 11 and the rear substrate 12 are sent to the assembly room 105, and as shown in FIG. 19, the hot plates 131, 1 in the assembly room are placed in a state of facing each other, as shown in FIG. 3 and 2 respectively.
  • the front substrate 11 is fixed to the upper hot plate 13 1 with the fixing jig 13 3 so as not to drop.
  • the front substrate 11 and the rear substrate 12 are moved in a direction approaching each other while being maintained at about 120 ° C., and pressurized at a predetermined pressure.
  • the contact portion 36 of each electrode 30 is sandwiched between the sealing layer 21b on the front substrate 11 side and the sealing layer 21a on the rear substrate 12 side, and each electrode 3 0 is electrically connected to the sealing layers 21a and 21b.
  • the contact part 36 has a horizontal length of 2 mm or more. As a result, it is possible to stably contact the sealing layers 21a and 21b.
  • indium to the contact portion 36 of the electrode 30 in advance, it is possible to more stably supply electricity to the sealing material.
  • each of the sealing layer 21 a on the side wall 18 side and the sealing layer 21 b on the front substrate 11 side is connected, for example.
  • 140 A DC current is applied in the constant current mode.
  • the sealing layers 21a and 21b are heated to melt the indium.
  • the connection terminal connected to the power supply 120 is brought into contact with the conducting portion 38 of the electrode 30 to make the power supply and the electrode, and the electrode and the sealing layer 21a, 21b. And can be reliably conducted.
  • each electrode 30 is in equivalent contact with the sealing layers 21a and 21b, it is possible to supply electricity stably, and almost the same amount of current flows through each sealing layer. And it can be melted evenly.
  • the sealing layer 21 a and 2 lb are fused to form a sealing layer 21, and the peripheral layer of the front substrate 11 is formed by the sealing layer.
  • the part and the side wall 18 are sealed.
  • the vacuum envelope 10 formed by the above process is cooled to room temperature in the cooling chamber 106 and is taken out from the unload chamber 107, whereby the vacuum envelope is removed. 10 is completed. After the vacuum envelope 10 is completed, the electrode 30 may be cut off if necessary.
  • the FED configured as described above and the method of manufacturing the same, the first embodiment described above is used. The same operation and effect as described above can be obtained. Further, according to the fourth embodiment, a current is applied to the sealing material.
  • the electrode 30 Since the electrode 30 has an outflow restricting portion positioned higher than the contact portion, the electrode 30 restricts the molten sealing material from flowing out through the electrode in the baking step or the like. As a result, the sealing layer can be maintained at a uniform thickness, the envelope can be reliably sealed over the entire circumference, and wiring caused by leakage of the sealing material can be achieved. It is possible to prevent short shots. Therefore, it is possible to obtain an inexpensive FED that is excellent in mass productivity and that can obtain stable and good images at the same time.
  • each electrode 30 is configured so that almost the entire body extends obliquely upward from the contact portion 36 to form the outflow regulation portion 37. As shown in FIG. 20, a part of the body part 34 may be extended vertically higher than the contact part 36 to form the outflow restriction part 37. .
  • each electrode 30 was configured to have a mounting part integrally, but as shown in Figs. 21 and 22, the electrode 30 has a contact part 36, a lunar union part 34, and an outflow control. It may be configured to include the unit 37 and the base unit 39, and may be configured to be attached to the rear substrate 12 using a separate clip 46.
  • the FED includes a vacuum envelope 10 and a plurality of, for example, a pair of electrodes 30 attached to the vacuum envelope.
  • the pair of electrodes 30 is attached to the envelope 10 in a state of being electrically connected to the sealing layer 21.
  • Each electrode 30 is formed by bending a copper plate having a thickness of, for example, 0.2 mm as a conductive member. That is, the electrode 30 is bent so that the cross section becomes substantially U-shaped, and can be attached to the front substrate 11 or the rear substrate 12 by sandwiching the peripheral portion thereof.
  • the contact portion 36 has a horizontal extension L of 2 mm or more.
  • the body portion 34 is formed in a belt shape, and extends outward and diagonally upward from the contact portion 36. As a result, the body portion 34 forms the outflow regulating portion 37 located higher than the contact portion 36 along the vertical direction. The body portion 34 forms a flow path for flowing a current from the conducting portion 38 to the contact portion 36.
  • the drain portion 35 is formed in a band shape and extends obliquely downward and outward from the contact portion 36. As a result, the drain portion 35 is formed at a position lower than the contact portion 36 along the vertical direction.
  • the width of the drain portion 35 is smaller than the width of the body portion 34, and is formed, for example, to about 1 mm. As will be described later, the drain portion 35 is used to discharge the molten sealing material to the outside. Forming a road.
  • Each electrode 30 is attached in a state of being elastically engaged with, for example, a back substrate 12 of the vacuum envelope 10. That is, the electrode 30 is attached to the vacuum envelope 10 while the peripheral portion of the rear substrate 12 is elastically held by the mounting portion 32.
  • the contact portion 36 of each electrode 30 is in contact with the sealing layer 21 and is electrically connected to the sealing layer.
  • the body 34 extends from the contact 36 to the outside of the vacuum envelope 10, and the outflow restricting portion 37 is located vertically higher than the contact 36.
  • the drain portion 35 extends from the contact portion 36 to the outside of the vacuum envelope 10 and is located lower than the contact portion 36 in the vertical direction.
  • the conduction portion 38 faces the side surface of the rear substrate 12 and is exposed on the outer surface of the vacuum envelope 10.
  • the pair of electrodes 30 are provided at two diagonally separated corners of the vacuum envelope 10, respectively, and are arranged symmetrically with respect to the sealing layer 21.
  • the other configuration of the FED is the same as that of the above-described fourth embodiment, and the same portions are denoted by the same reference characters and will not be described in detail.
  • the FED according to the fifth embodiment is manufactured by the same manufacturing method as the manufacturing method according to the fourth embodiment.
  • the sealing layers 21a and 2lb are heated and melted. Then, the sealing layer 21a on the rear substrate 12 side tends to flow out through the electrode 30 to the outside. However, since each electrode 30 is provided with an outflow control portion 37 located higher than the contact portion 36, this outflow control is performed.
  • the control section can prevent the molten indium from flowing out of the rear substrate. Also, a part of the molten indium flows outside the back substrate 12 from the drain portion 35 of the electrode 30, and the width of the drain portion is larger than the width of the body portion 34. Is small, so the amount of runoff is small.
  • the amount of outflow of molten indium can be suppressed to about 1Z10 compared to the electrode without the outflow regulation part 37 and the drain part,
  • the sealing layer becomes relatively thin so that it can easily leak from the sealing portion, and if the indium that has flowed out contacts the wiring on the substrate to generate a short-circuit. Such problems can be prevented.
  • the sealing layers 21 a and 21 b are fused to form a sealing layer 21, and the peripheral portion of the front substrate 11 and the side wall 18 are formed by the sealing layer. Seal.
  • the front substrate 11 and the rear substrate 12 are pressed toward each other, so that the molten indium is crushed and excess indium is generated. This excess indium tries to flow out to the substrate side.
  • each electrode 30 is provided with a drain portion 35 located lower than the contact portion 36, the excess molten alloy is actively drained.
  • the drain portion 35 of the electrode 30 is formed to have a width smaller than that of the body portion 34, but because the indium is pressurized.
  • each electrode 30 is attached to the corner of the rear substrate 12, and the drain 35 is located at a position separated from the wiring 23. Has been extended to. Therefore, the indium flowing out of the drain portion 35 does not come into contact with the wiring 23, and it is possible to prevent a short-circuit of the wiring due to the outflow indium.
  • an indium to the drain portion 35 of the electrode 30 and a region in the vicinity thereof in advance, it is possible to more stably flow into the sealing material.
  • the body portion 34 of each electrode 30 is configured so that almost the whole extends obliquely upward from the contact portion to form the outflow regulating portion 37.
  • a part of the body part 34 may be extended to a position higher in the vertical direction than the contact part 36 to form the outflow regulating part 37.
  • each electrode 30 has a configuration in which the mounting portion is integrally provided.
  • the contact portion 36, the body portion 34, the outflow It is configured to include a regulating part 37, a drain part 35 and a base part 39, and is attached to the rear substrate 12 by using a separate tap 46 having a conducting part 38. May be.
  • the drain portion 35 of the electrode 30 is not limited to the configuration provided side by side with the body portion 34, and may be provided at the center of the body portion 34 as shown in FIG. 27. good.
  • the drain portion 35 is formed by cutting and raising a part of the body portion 34, and the body portion allows the sealing material to flow from the contact portion 36 to the drain portion 35. Opening 4 2 Is formed.
  • the number of the drain portions 35 of the electrodes 30 is not limited to one, and a pair of drain portions 35 may be provided on both sides of the body portion 34.
  • the configuration of each drain unit 35 is the same as that of the above-described embodiment.
  • the FED includes a flat rectangular vacuum envelope 10 and a plurality of, for example, a pair of electrodes 30 attached to the envelope.
  • the configuration of the FED is the same as that of the above-described embodiment except for the electrode 30. Therefore, the description will focus on different configurations.
  • the structure of the FED will be described together with the manufacturing method.
  • a front substrate 11 on which a metal pack 16 and a metal pack 17 are formed, and a rear substrate 12 on which an electron-emitting device is formed are prepared. Subsequently, the side wall 18 and the supporting member 14 are sealed on the inner surface of the rear substrate 12 with low melting glass in the air. Then sidewall 1
  • the front substrate 11 and the rear substrate 12 are sent into, for example, a vacuum processing apparatus shown in FIG. 9 and sealed in a vacuum atmosphere.
  • the front substrate 11 and the rear substrate 12 are heated and sufficiently degassed.
  • the heating temperature is appropriately set to about 200 ° C to 500 ° C.
  • gas released from the inner wall of the envelope component member is reduced, and the degree of vacuum in the vacuum envelope is prevented from deteriorating.
  • a getter film is formed on the phosphor screen 16 of the front substrate 11. This is because the residual gas after forming the vacuum envelope is adsorbed and evacuated by the getter film, and the degree of vacuum in the vacuum envelope is maintained at a favorable level.
  • the front substrate 11 and the rear substrate 12 are overlapped with each other at a predetermined position such that the phosphor screen 16 and the electron-emitting device face each other.
  • electricity is passed to the sealing layers 21a and 2lb, and these sealing materials are heated and dissolved.
  • the current is stopped, and the heat of the sealing layers 21a and 21b is quickly diffused and conducted to the front substrate 11 and the side wall 18 to solidify the sealing layers 21a and 21b.
  • the front substrate 1 1 and the side wall 18 are bonded to the sealing layer 2 1 They are sealed to each other by a, 21b.
  • the above-mentioned sealing step will be described in more detail.
  • the temperature of the front substrate 11 and the rear substrate 12 is lower than the melting points of the sealing layers 21 a and 21 b.
  • the sealing layers 21a and 21b are solidified.
  • the front substrate 11 and the rear substrate 12 are overlapped at a predetermined position, and the sealing layers 21a and 21b are overlapped with each other.
  • a predetermined load is applied to the front substrate 11 and the rear substrate 12 by the pressurizing devices 23a and 23b in a direction approaching each other.
  • the image display area is held in a predetermined gap by the support member 14.
  • the plate-like electrode 30 is disposed between the sealing layers 21 a and 21 b at two corners of the side wall 18 opposed to each other in the diagonal direction.
  • the electrode 30 has two contact portions 36a and 36b, each of which is in electrical contact with the sealing layer, and is formed in a substantially Y-shape. ing.
  • the contact portions 36a and 36b of each electrode 30 are in contact with these sealing layers on both sides of the corners of the sealing layers 21a and 2lb.
  • a gap 30c is formed between the two contact portions 36a and 36b to allow the molten sealing material to flow out.
  • a method of sandwiching the electrode 30 a method of fixing it with a clip of the same material as the electrode can be used.
  • the electrode 30 is formed of a single element or an alloy containing at least one of Cu, Al, Fe, Ni, Co, Be, and Cr.
  • the electrode 30 is made of a sealing material layer.
  • the vacuum envelope can be vacuum-sealed by an extremely short and simple manufacturing apparatus. It can be.
  • a sealing material having conductivity it is possible to selectively heat only the sealing material having a small heat capacity, that is, a small volume, without heating the substrate. Therefore, it is possible to suppress the deterioration of the positioning accuracy due to the thermal expansion of the substrate.
  • the heat capacity of the sealing layer is very small compared to the heat capacity of the substrate Compared to the conventional method of heating the entire substrate, the time required for heating and cooling can be significantly reduced, and mass productivity can be greatly improved. Furthermore, the only device required for sealing is a mere power supply terminal and a mechanism for bringing the terminal into contact with the power supply terminal, so that a very simple and clean device suitable for ultra-high vacuum can be realized.
  • Each electrode 30 for supplying electricity to the sealing layers 21a and 21b has a plurality of contact portions 36a and 36b, and a gap 30c is formed between these contact portions. Is formed. Therefore, at the time of sealing, it is possible to positively flow the excess molten sealing material to the outside from the gap 30 c defined between the contact portions 36 a and 36 b. You. Therefore, by providing the contact portion of the electrode 30 at an appropriate position, it is possible to prevent the sealing material from protruding onto the wiring of the substrate and the like, without causing a short-circuit between the wirings. Quick and stable sealing is possible.
  • the electrode 30 need only have a gap through which the sealing material passes between the contact portions, and is not limited to the above-described Y-shaped shape. For example, as shown in FIG. It may be shaped.
  • the electrode 30 may have three or more contact portions in contact with the sealing material.
  • the electrode 30 may be formed in a shape having four contact portions 36a, 36b32a32b. In this case, a gap 30 c through which the sealing material passes is formed between the adjacent contact portions.
  • the contact portion of the electrode 30 is not limited to the two sides sandwiching the corner of the vacuum envelope, and as shown in FIG. 34B, the sealing layer 21 is formed on one side of the corner of the envelope. You may touch a and 21b. Is electrode 30 corner? The sealing material may flow out from the corner of the envelope 30 d force because it is located slightly off.
  • FIG. 33, FIG. 34a and FIG. 34B other configurations are the same as those of the above-described embodiment, and the same portions are denoted by the same reference numerals. Detailed description is omitted. Also in these modified examples, the same operation and effect as in the sixth embodiment can be obtained.
  • the electrode 30 is configured to directly contact the sealing layers 2 la and 2 lb.
  • the electrode 30 may be covered with the conductive material layer 31, and the electrode may be brought into contact with the sealing layer via the conductive material layer 31.
  • each electrode 30 the surface that comes into contact with sealing layers 21 a and 21 b is previously covered with conductive material layer 31.
  • both surfaces of each electrode 30 are coated with, for example, In or an alloy containing In which is the same conductive material as sealing layers 21a and 21b.
  • the conductive material layer 31 is formed, for example, by applying a conductive material to the electrode surface with a soldering iron to which ultrasonic waves have been applied. Thereby, each electrode 30 is in contact with sealing layers 21 a and 21 b via conductive material layer 31.
  • the electrode 30 is formed of a single element or an alloy including at least any one of Cu, Al, Fe, Ni, Co, Be, and Cr.
  • the sealing layers 21a and 21b reach thermal equilibrium with the front substrate 11 and the side wall 18 having a large heat capacity, and are rapidly cooled and solidified.
  • the front substrate 11 and the side wall 18 are sealed to each other by the sealing layers 21a and 21b, and the FED having the vacuum envelope 10 whose inside is maintained at a high vacuum is provided. can get.
  • the electrode 30 is fixed to the vacuum envelope 10 while being sealed together with the sealing layers 21a and 21b.
  • the sixth embodiment is the same as the sixth embodiment described above, and the same portions are denoted by the same reference characters and will not be described in detail. Detailed description is omitted.
  • the electrode 30 for supplying electricity to the sealing layers 21 a and 21 b has a surface in contact with the sealing layer covered with a conductive material layer 31. Therefore, when the sealing layers 21a and 21b are energized and melted, the wettability between the electrode 30 and the sealing material is improved, and the increase in contact resistance between the sealing material and the electrode is prevented. Can be done. This prevents abnormal heat generation at the contact portion and eliminates the possibility that the sealing layers 21a and 21b are disconnected. As a result, in a short time and It is possible to manufacture FEDs with high yield.
  • the molten sealing material that has become excessive at the time of sealing can be actively removed from the electrode to the outside of the envelope. It can be discharged to
  • the configuration is such that the electrode 30 is sandwiched between the sealing layers 21a and 21b.However, the configuration is such that current is supplied while the electrode is in contact with only one sealing material. You may. That is, as shown in FIG. 36, the front substrate 11 and the rear substrate 12 are overlapped at a predetermined position, and the sealing layers 21 a and 21 b are overlapped and brought into contact with each other. Pressing devices 23a and 23b apply a predetermined sealing load to front substrate 11 and rear substrate 12 in directions approaching each other. Then, the electrodes 30 are arranged so as to be in contact with the sealing material 21b.
  • the electrode can be held in such a way that the electrode is fixed with a clip of the same material as the sealing layer so that it contacts the sealing layer 21a, 2lb of the front substrate 11 in advance, or a power supply terminal
  • a method may be used in which the electrodes are fixedly held on the 24a and 24b with a clip or the like, and the electrodes are sandwiched when the front substrate 11 and the rear substrate 12 are overlapped at a predetermined position.
  • each electrode 30 that comes into contact with the sealing layer 21 b is covered with the conductive material layer 31 in advance.
  • the conductive material layer 31 is formed, for example, by applying a conductive material to the electrode surface with a soldering iron to which an ultrasonic wave is applied.
  • a conductive material layer may also be formed on a surface of the electrode that is not in contact with the sealing material, in order to allow excess sealing material to protrude from the electrode 30 during sealing.
  • the other configuration is the same as that of the seventh embodiment, and the same portions are denoted by the same reference characters and will not be described in detail. Also, in the above configuration, it is possible to obtain the same functions and effects as in the above-described seventh embodiment.
  • a direct current not only a direct current but also an alternating current that fluctuates at a commercial frequency may be used.
  • the trouble of converting the commercial current transmitted by the alternating current into the direct current can be omitted, and the device can be simplified.
  • an alternating current fluctuating at a high frequency of the kHz level may be used.
  • the same heating effect as described above can be obtained with a smaller current value because the Joule heat increases by an amount corresponding to an increase in the effective resistance value to a high frequency due to the skin effect.
  • the power to be energized and the time are set to about 5 to 300 seconds in the above embodiment. If the energization time is long (low power), the cooling rate decreases due to a rise in the temperature around the substrate and adverse effects occur due to thermal expansion. If the energization time is short (high power), the conductive sealing material is used. Disconnection due to non-uniform filling of glass and cracking due to glass thermal stress occur. Therefore, it is desirable to set the optimal power and time (including temporal power change) for each object.
  • the temperature difference between the substrate temperature at the time of sealing and the melting point of the sealing material is about 20 ° C. to 150 ° C. in the above embodiment. If the temperature difference is large, the cooling time can be shortened, but the thermal stress of the glass increases. Therefore, it is desirable to set optimum conditions for each object.
  • a method of manufacturing an FED according to the eighth embodiment of the present invention will be described.
  • the configuration of the FED and the configuration other than the sealing step in the manufacturing method are the same as those of the above-described sixth embodiment, and different portions will be mainly described.
  • the front substrate 11 and the rear substrate 12 sent to the assembly chamber of the vacuum processing apparatus are hot plates 131, 132 while facing each other.
  • the outer surfaces are kept in close contact with each other. That is, the rear substrate 12 is placed on the hot plate 13 2, and the front substrate 11 is fixed to the upper hot plate 13 1 by the fixing jig 13 3 so as not to drop. .
  • a pair of plate-like electrodes 30 made of copper and having a thickness of about 0.2 mm is prepared, and these electrodes 30 are attached to the front substrate. Insert between 1 1 and rear substrate 1 2.
  • the pair of electrodes 30 are provided at opposing positions, and the tip of each electrode is placed between the sealing layer 21b on the front substrate 11 side and the sealing layer 21a on the rear substrate 12 side. Insert to be located.
  • the pair of electrodes 30 is disposed on two diagonally opposite corners, two short sides, or two long sides of the substrate.
  • the molten indium is solidified, and the envelope 10 is formed.
  • the envelope formed in this way is cooled to room temperature in the cooling chamber 106 and taken out from the inlet chamber 107. Through the above steps, a vacuum envelope is completed.
  • the front substrate 11 and the rear substrate 12 are sealed and joined in a vacuum atmosphere, so that baking and electron beam cleaning are used together.
  • the surface adsorbed gas can be sufficiently released, and a getter film having an excellent adsorption ability can be obtained.
  • the entire surface of the front substrate and the rear substrate are not required to be heated and sealed, so that the getter film is deteriorated and the substrate is broken during the sealing process. Troubles can be eliminated.
  • the sealing time can be shortened, and a manufacturing method with excellent mass productivity can be achieved.
  • the front substrate 11 and the rear substrate 1 2 At least one of them is pressed so that the front substrate and the rear substrate come close to each other, and at least a part of the sealing layer 21 a, 2 lb is applied between the front substrate and the periphery of the rear substrate.
  • the sealing layer In the sandwiched state, the sealing layer is energized and heated and melted.
  • the sealing layer after the fusion is sandwiched between the front substrate 11 and the side wall 18, so that the sealing layers 21 a and 21 b along the periphery of the substrate are formed. Excessive cohesion due to the limited space between the front substrate 11 and the side walls 18 even if local irregularities occur in the molten image due to variations in cross-sectional area, gravity, etc.
  • the cross-sectional area of the sealing layer after melting is uniform over the entire circumference of the front substrate 11 and the side wall 18, and during bonding, the sealing layer can be heated evenly over the entire assembly. it can. From this, it is possible to prevent disconnection due to local heating of the sealing layer, cracks in the substrate, etc., and to perform stable bonding. Further, it is possible to provide an FED which can be manufactured at low cost, has high reliability, and can obtain good images.
  • each electrode 30 is simultaneously electrically contacted with both the sealing layer 21b on the front substrate 11 side and the sealing layer 21a on the side wall side. Electric current can be supplied in a state in which the sealing layer is in equivalent contact with the sealing layer. As a result, almost the same amount of current can flow through each sealing layer. As a result, the sealing layers provided on the front substrate 11 and the rear substrate 12 can be uniformly heated and melted, and stable bonding can be performed.
  • a method of manufacturing an FED according to a ninth embodiment of the present invention will be described.
  • the electrode 30 is sandwiched between the upper and lower sealing layers 21a and 21b, and is brought into electrical contact with both sealing layers at the same time.
  • the sealing layers 21a and 21b are partially welded to each other in advance at a portion where the electrode 30 is brought into contact, and the electrode 30 is brought into contact with the welded portion. I have.
  • the front substrate 11 and the rear substrate 12 sent to the assembly chamber 105 of the vacuum processing apparatus are held by a plurality of support pins 128 as shown in FIG. Are pressed in the direction of approaching each other.
  • the sealing layer 21 b provided on the front substrate 11 and the sealing layer 21 a provided on the side wall 18 come into contact with each other.
  • the sealing layer 21 b provided on the front substrate 11 has an extension 21 c that extends outward from other portions. are doing.
  • the extending portions 21 c are provided near two opposing corners of the front substrate 11, respectively.
  • an induction heating coil 127 is arranged to face the corner of the rear substrate 12 below the corner thereof, and the sealing layer is formed by the induction heating coil 127.
  • 21a and 21b are locally heated with high frequency, and the sealing layers are partially welded to each other. Thereby, the welded portions 21 d are formed at the two corners opposing each other in the diagonal direction.
  • an electrode 30 made of copper having a thickness of about 0.2 mm is inserted between the front substrate 11 and the rear substrate 12, and is attached to each of the welded portions 21 d.
  • power is supplied to the sealing layers 21a and 2lb from a power source through a pair of electrodes 30.
  • the indium is heated and melted, and the front substrate 11 and the side walls 18 are hermetically bonded by the sealing layers 21a and 21b.
  • the molten indium is solidified, and the envelope 10 is formed.
  • the envelope formed in this way is cooled to room temperature in the cooling chamber and taken out of the unloading chamber. Through the above steps, a vacuum envelope is completed.
  • the other configuration is the same as that of the above-described embodiment, and the same portions are denoted by the same reference numerals and detailed description thereof will be omitted.
  • the ninth embodiment configured as described above According to this, at the position where the electrode 30 is brought into contact, the opposing indiums are welded before energization, so that the sealing layer 21 b on the front substrate 11 side and the side wall 18 side are welded. Almost the same amount of current can be shunted and flown to the sealing layer 21a. This makes it possible to heat and melt both sealing layers 2 la 21 b uniformly.
  • the sealing layer is energized while the front substrate 11 and the rear substrate 12 are pressed in a direction approaching each other, the sealing layer after melting is cut off in the same manner as in the eighth embodiment.
  • the change in area can be suppressed, and the entire sealing layer can be uniformly heated and heated. From the above, it is possible to stably join the front substrate 11 and the rear substrate 12 to obtain a FED with improved reliability.
  • the electrodes may be put into a vacuum processing apparatus in a state where the electrodes are attached to a substrate in advance
  • the shapes and materials of the poles are not limited to those in the above embodiment.
  • the sealing is performed with the sealing material provided on both the front substrate and the side wall.
  • the sealing may be performed with the sealing material provided on at least one of the front substrate and the side wall. .
  • the FED includes a vacuum envelope 10 and a plurality of, for example, a pair of electrodes 30 attached to the vacuum envelope.
  • the vacuum envelope 10 includes a front substrate 11 and a rear substrate 12 each made of a rectangular glass plate, and these substrates 11 and 12 are arranged at a peripheral portion through a rectangular frame-shaped side wall 18. Are joined together.
  • a phosphor screen 16 On the inner surface of the front substrate 11, a phosphor screen 16, a metal knock 17, and a getter film 13 are formed.
  • a number of electron-emitting devices 22 for exciting the phosphor layer of the phosphor screen 16 are provided.
  • a large number of wirings 23 for supplying a potential to the electron-emitting devices 22 are provided in a matrix on the inner surface of the rear substrate 12, and the ends of the wirings 23 are provided at the ends of the vacuum envelope 10. It is drawn out to the periphery.
  • each electrode 30 is formed by bending a copper plate having a thickness of, for example, 0.2 mm as a conductive member. That is, the electrode 30 is bent so that its cross section is substantially U-shaped, and Attachment part 32, body part 34 extending from the attachment part and serving as a current path to the sealing layer, contact part 36 located at the extended end of the body part and capable of contacting the sealing layer, and attachment part And a flat conducting portion 38 formed by the back of the body.
  • the mounting portion 32 is integrally provided with a holding portion bent in a clip shape, and can be attached while holding the peripheral portion of the front substrate 11 or the rear substrate 12.
  • the contact portion 36 has a horizontal extension L of 2 mm or more.
  • the body portion 34 is formed in a belt shape, and extends obliquely upward from the mounting portion 32. As a result, the contact portion 36 is located higher than the mounting portion 32 and the body portion 34 in the vertical direction.
  • each electrode 30 is elastically attached to the peripheral portion of the rear substrate 12 by, for example, the mounting portion 32 of the vacuum envelope 10. It is attached to the vacuum envelope 10 while being clamped.
  • the contact portion 36 of each electrode 30 is in contact with the sealing layer 21 and is electrically connected.
  • the body portion 34 extends from the contact portion 36 to the outside of the vacuum envelope 10, and the conduction portion 38 faces the side surface of the rear substrate 12 and faces the vacuum envelope 1. Exposed on the outer surface of 0.
  • the pair of electrodes 30 are provided at two diagonally separated corners of the vacuum envelope 10, respectively, and are arranged symmetrically with respect to the sealing layer 21.
  • the other configuration of the FED is the same as that of the above-described first embodiment, and the same portions are denoted by the same reference characters and will not be described in detail.
  • a method of manufacturing the FED according to the tenth embodiment will be described in detail. Here, the description will focus on the parts that are different from the manufacturing method according to the first embodiment.
  • a front substrate 11 on which a phosphor screen 16 and a metal back 17 are formed, and a rear substrate 12 on which an electron-emitting device 22 is formed Prepare Subsequently, the side wall 18 and the support member 14 are sealed on the inner surface of the rear substrate 12 with the low melting point glass 19 in the atmosphere. Thereafter, indium is applied to a predetermined width and thickness over the entire periphery of the sealing surface of the side wall 18 to form a sealing layer 21a. An image is applied to the sealing surface facing the side wall of the front substrate 11 in a rectangular frame shape with a predetermined width and thickness to form a sealing layer 2 lb.
  • a pair of electrodes 30 is mounted on the back substrate 12 to which the side walls 18 are joined. At this time, each electrode 30 is mounted such that the contact portion 36 does not contact the sealing layer 21a and faces the sealing layer 21 with a gap.
  • the electrode 30 requires a pair of a positive electrode and a single electrode on the substrate, and each energizing path of the sealing layers 21a and 21b, which are energized in parallel between the pair of electrodes, has its length It is desirable to make them equal. Therefore, a pair of electrodes 30 is mounted on two diagonally opposite corners of the rear substrate 12, and the length of the sealing layers 21 a and 21 b located between the electrodes is It is set almost equally on both sides of.
  • Front board 1 1 and rear board 1 2 is sent to the electron beam cleaning chamber 102 through the loading chamber 101 for baking.
  • the various members are heated to a temperature of 300 ° C. to release the gas adsorbed on the surface of each substrate.
  • an electron beam is irradiated from the electron beam generator onto the phosphor screen surface of the front substrate 11 and the electron emission element surface of the rear substrate 12 so that the phosphor screen surface and the electrons are emitted.
  • the entire surface of the emission element surface is cleaned with an electron beam.
  • the sealing layers 21a and 21b are once melted by heating to have fluidity, but the contact portions 36 of the electrodes 30 are connected to the sealing layers 21a and 21b. They face each other with a gap without contact. Therefore, it is possible to suppress the molten indium from flowing out of the rear substrate 12 through the electrode 30.
  • the front substrate 11 and the back substrate 12 that have been baked and cleaned with an electron beam are sent to the cooling chamber 103, cooled to a temperature of about 120 ° C, and then to the getter film deposition chamber 104. Is sent.
  • a Ba film is formed as a getter film 27 outside the metal back 17 by vapor deposition. The Ba film can prevent the surface from being contaminated with oxygen, carbon, and the like, and can maintain an active state.
  • the front substrate 11 and the rear substrate 12 are sent to the assembly room 105.
  • the front substrate 11 and the rear substrate 12 are placed on the hot plates 131, 132 in the assembly room in a state where they are opposed to each other. Each is retained. Fixing jig 1 3 so that the front substrate 1 1 does not fall Fix to the upper hot plate 1 3 1 with 3.
  • the front substrate 11 and the rear substrate 12 are moved in a direction approaching each other while being maintained at about 120 ° C., and pressurized at a predetermined pressure.
  • the substrate may be moved by moving both the front substrate 11 and the rear substrate 12 so as to approach each other, or by moving one of the front substrate and the rear substrate so as to approach each other.
  • the sealing layer 21b on the front substrate 11 and the sealing layer 21a on the rear substrate 12 are brought into contact with each other.
  • the contact portion 36 of each electrode 30 is sandwiched between the sealing layers 21a and 21b, and each electrode 30 is electrically connected to the sealing layers 21a and 2lb. Connecting.
  • the contact portion 36 is formed with a horizontal length of 2 mm or more, the contact portion 36 can stably contact the sealing layers 21a and 21b.
  • the sealing layers 21 a and 21 b are fused to form a sealing layer 21, and the peripheral layer and the side wall 1 of the front substrate 11 are formed by the sealing layer. 8 Seal and.
  • the front substrate 11, side wall 18, and rear substrate 12 sealed by the above process are cooled to room temperature in the cooling chamber 106, and are taken out from the unload chamber 107. As a result, the vacuum envelope 10 of the FED is
  • the pair of electrodes 30 may be cut off if necessary.
  • a stable current can be applied to the sealing layer 21 via the electrode 30 mounted on the rear substrate during the heating by energization. Accordingly, at the time of sealing, the conductive low-melting-point sealing material constituting the sealing layer can be stably and reliably melted for a predetermined energizing time, and as a result, the sealing layer 21 Quick and reliable sealing can be performed without cracks.
  • the surface adsorbed gas can be sufficiently released, and a getter film with excellent adsorption ability can be obtained.
  • sealing and joining the indium by energizing and heating the indium, it is not necessary to heat the entire front substrate and the rear substrate, while maintaining the entire substrate at a low temperature. The sealing operation can be performed quickly and stably. At the same time, it is possible to eliminate problems such as deterioration of the getter film and cracking of the substrate during the sealing process.
  • the contact portion of the electrode faces the sealing layer with a gap without contacting the sealing layer. Therefore, even if the sealing material is melted in the baking step or the like, it is possible to prevent the melted sealing material from flowing out through the electrode. Accordingly, the sealing layer can be maintained at a uniform thickness over the entire circumference, and it is possible to prevent a short-circuit of the wiring due to the outflow of the sealing material. From the above, it is possible to inexpensively obtain an FED that is excellent in mass productivity and that can obtain a stable and good image.
  • the contact portion 36 and the body portion 34 of each electrode 30 are formed in a band shape having the same width.
  • the body portion 34 may be formed to have a width smaller than the width of the contact portion 36.
  • the body portion 34 is formed in a band shape having a uniform width over the entire length.
  • the body portion 34 has a portion connected to the contact portion 36 formed to have a width smaller than the width of the contact portion. It may be formed so that the width gradually increases toward 2.
  • the electrode 30 is used in which the width of the body portion 34, particularly the width of the body portion at least in a portion connected to the contact portion 36 is smaller than the width of the contact portion.
  • the width of the body portion 34 is narrowed, but the body portion may be controlled by making a cutout in the hole, or may be controlled by reducing the thickness of the body portion. Further, the material may be changed in the body part and other parts, and the heat generation may be controlled by overlapping the plate materials.
  • each electrode 30 is configured to integrally include a clip-like holding portion.
  • the electrode 30 may be configured to include a separate clip 46 that functions as a unit. That is, the electrode 30 has a contact portion 36, a body portion 34, and a flat base portion 39, which are integrally formed by bending a plate material.
  • the mounting portion for the electrode 30 is composed of a base portion 39 and a separate clip 46.
  • the electrode 30 is formed by clamping the base 39 and the periphery of the substrate, here, the periphery of the rear substrate 12, with the clip 46, whereby the rear substrate 1 Attached to 2.
  • a pair of electrodes are attached to opposite diagonal portions of the rear substrate, and current is applied to the sealing layer while the substrates are pressed against each other.
  • the present invention is not limited to this, and a pair of electrodes may also be attached to the front substrate side, and the sealing layer may be separately energized and heated and melted separately from the rear substrate side.
  • the front substrate 11 and the rear substrate 12 sent to the assembly room are fixed on the hot plates 131, 132, and are opposed to each other. They are moved toward each other.
  • the contact portion of the electrode 30 attached to the rear substrate 12 electrically contacts the sealing layer 21b on the front substrate 11 side, and the contact portion of the electrode 30 attached to the front substrate 11
  • the contact portion makes electrical contact with the sealing layer 21a on the rear substrate 12 side.
  • the sealing layer 21b on the front substrate 11 side and the sealing layer 21a on the rear substrate 12 side are held in a state where they do not contact each other.
  • the sealing layers 21a and 21b are separately melted. I do. After the melting, the energization is stopped, the two substrates 1 1 1 2 are moved further in the direction of approaching each other, and the pressure is applied, whereby the sealing layers 21 a and 21 b are fused to form a sealing layer. 21 is formed, and the peripheral portion of the front substrate 11 and the side wall 18 are sealed by the sealing layer 21.
  • Attach two pairs of electrodes to one of the substrates apply electricity to the sealing layer 2 1a on the rear substrate 12 with one pair of electrodes, and apply the sealing layer 2 on the front substrate 1 1 with the other pair of electrodes. It is also possible to adopt a configuration that energizes 1b.
  • FIG. 53 two pairs of electrodes 30 are attached to rear substrate 12.
  • Front board 11 sent to the assembly room and The rear substrate 12 is fixed on the hot plates 13 1 and 13 2, and is arranged to face each other, and then moved in a direction approaching each other.
  • the contact portions 36 of a pair of electrodes are in electrical contact with the sealing layer 21 b on the front substrate 11 side.
  • the other pair of electrodes 30 has a convex portion 47 formed on the body 34 of the electrode.
  • the convex portion 47 abuts on the peripheral edge of the front substrate 11, and the electrode contact portion 36 is the rear substrate.
  • the sealing layers 21a and 21b are separately heated and melted. After the melting, the power supply is stopped, and the front substrate 11 and the rear substrate 12 are moved further closer to each other and pressurized. Thus, the sealing layers 21 a and 2 lb are fused to form a sealing layer 21, and the peripheral portion of the front substrate 11 and the side wall 18 are sealed by the sealing layer.
  • the FED vacuum envelope After the sealing is completed, the electrode may be removed from the vacuum envelope.
  • the electrode 3 is removed from the vacuum envelope 10. It is configured to excise zero.
  • the envelope 10 is removed from the unload chamber 107 of the vacuum processing apparatus. In this envelope 10, the electrode 30 remains firmly bonded to the sealing layer 21. Therefore, these electrodes 30 are removed from the envelope 10 by the following steps.
  • a blade of an ultrasonic cutter 60 was inserted into the interface between the electrode 30 and the sealing layer 21 to form a sealing member located around the contact portion 36 of the electrode.
  • the adhesion layer 21 is removed by ultrasonic cutting.
  • the ultrasonic cutter 60 When the ultrasonic cutter 60 is used, the frictional force between the blade and the sealing layer 21 is reduced by the ultrasonic vibration, so that the sealing layer can be easily formed with little pressure. Can be cut and removed.
  • the bonding strength between the electrode and the sealing layer becomes weak.
  • the mounting portion 32 of the electrode 30 is chucked by a holding jig (not shown) and pulled out in the direction of the arrow.
  • the electrode 30 can be mechanically removed from the envelope 10 without damaging the substrate or the sealing layer.
  • the concave portion 41 corresponding to the trace where the electrode contact portion 36 is arranged is formed in the sealing layer 21. Remains. That is, as shown in FIGS. 57 and 58, two corners 40 a and 40 b of the sealing layer 21 opposed to each other in the diagonal direction of the vacuum envelope 10. Located in At two locations, for example, recesses 41 each having a width of 5 mm and a depth of about 1 mm are formed, each opening toward the outside of the vacuum envelope. Thereby, at corners 40 a and 40 b of vacuum envelope 10, sealing layer 21 is formed such that its width is partially reduced.
  • the other configuration is the same as that of the above-described tenth embodiment, and the same portions are denoted by the same reference characters and will not be described in detail.
  • the manufacturing method and the FED according to the first embodiment configured as described above it is possible to obtain the same operation and effects as those of the above-described embodiment.
  • the handling of the envelope is simplified.
  • the FED when the FED is incorporated into a cabinet as a monitor, it is possible to prevent the electrodes from becoming an obstacle.
  • the part of the electrode protruding from the substrate may damage other equipment or workers, or the load on the enclosure via the electrode may cause problems such as breakage of the enclosure. .
  • the sealing material around the electrode can be removed, and the electrode can be easily removed.
  • the electrode 30 when removing the electrode 30 from the vacuum envelope 10, an ultrasonic cutter was used.
  • the electrode 30 may be removed by the following method. That is, as shown in Figure 59
  • the ultrasonic vibrator 64 connected to the ultrasonic wave generating source 62 is brought into contact with the electrode 30 and the electrode 30 is directly ultrasonically vibrated.
  • the electrode 30 itself functions as a blade of the ultrasonic cutter, and ultrasonically cuts the interface between the contact portion 36 of the electrode and the sealing layer 21.
  • the sealing material around the electrode 30 can be removed, and the electrode can be easily removed.
  • a region near the contact portion 36 of the sealed electrode 30 is partially heated and softened, and the bonding strength between the electrode and the sealing layer 21 is reduced.
  • the electrode may be pulled out from the sealing layer. This is performed by inductively heating the sealing layer 21 near the contact portion 36 of the electrode 30. That is, as shown in FIG. 60, after sealing, for example, the induction heating coil 66 is disposed adjacent to the front substrate 11 of the vacuum envelope 10 in the vicinity of the electrode 30. By applying a high frequency to the induction heating coil 66, the sealing layer 21 is heated at a high frequency via the front substrate 11, and the sealing layer is partially softened.
  • the mounting portion 32 of the electrode 30 is chucked in advance by a holding jig (not shown) to apply a weak tensile force to the outside of the substrate. Then, when the sealing layer 21 is softened, the bonding strength between the electrode 30 and the sealing layer 21 is weakened, and the electrode 30 can be pulled out. After the electrode 30 is pulled out, the heated portion of the sealing layer 21 is quickly cooled by stopping the energization of the induction heating coil 66 and separating the induction heating coil 66 from the vacuum envelope 10. The envelope 10 is completed.
  • the electrode may be mechanically removed.
  • the heating time is long, a wide area of the sealing layer 21 melts and flows out, and the hermetic sealing of the envelope may be broken. Therefore, it is desirable to perform heating in a short time of about 3 to 30 seconds. In a short time, only the sealing material in the vicinity of the contact portion 36 of the electrode 30 is melted, and the electrode 30 can be removed while the vacuum tightness of the envelope 10 is maintained.
  • the area around the electrode may be heated by a local heater or another method.
  • a concave portion 41 as shown in FIG. 61A or 61 E is formed in the sealing layer 21 according to the position where the electrode is arranged and the shape of the electrode. You may.
  • the corners of the side wall 18 and the sealing layer 21 are formed at right angles, and the recesses 41 are formed at the corners of the sealing layer and extend diagonally. It has a rectangular shape.
  • the corners of the side wall 18 and the sealing layer 21 are formed at right angles, and the recesses 41 are formed in a shape in which the corners of the sealing layer are chamfered, and the diagonal direction Has been extended.
  • the corners of the side wall 18 and the sealing layer 21 are formed in an arc shape, and the recess 41 is formed in the corner of the sealing layer and extends diagonally. It has a rectangular shape.
  • the corners of the side wall 18 and the sealing layer 21 are arc-shaped.
  • the bottom surface of the concave portion 41 is formed at a corner of the sealing layer and has a shape protruding in an arc shape in a diagonal direction.
  • the corners of the side wall 18 and the sealing layer 21 are formed in an arc shape, and the recess 41 is formed in a shape in which the corner of the sealing layer is chamfered. Extend diagonally
  • the concave portion 41 may have a shape other than the above depending on the shape of the electrode used.
  • the electrode 30 is not limited to the corner of the envelope, and may be, for example, the center of the long side or the short side as long as the energization path length of each of the sealing layers 21 is set to be equal. It may be arranged in a part. In this case, the upper part 41 is formed at the center of the long side or the short side of the sealing layer 21 corresponding to the position of the electrode 30.
  • the position and shape of the recess 41 can be set arbitrarily.
  • the sealing layers 21a and 21b provided on the front substrate 11 and the rear substrate 12 are separately energized and sealed. After the material is melted, the two substrates can be sealed by applying a desired pressure in a direction approaching each other. In this case, two pairs and four electrodes 30 are required for the two substrates.These electrodes are mounted, for example, on the four corners of the rear substrate 12, respectively. Is used to energize the sealing layer 21 a provided on the back substrate 12, and the other pair of electrodes is used to energize the sealing layer 2 lb provided on the front substrate 11. Therefore, after the electrodes are removed after the sealing, four concave portions 41 are formed in the sealing layer 21 of the vacuum envelope 10.
  • the number of these recesses is limited to two or four as described above. Instead, the number can be arbitrarily determined according to the number of electrodes used. For example, when energization sealing is performed using four electrodes whose contact portions are bifurcated, eight recesses are formed. In the first embodiment described above, the entire electrode is taken out of the vacuum envelope. Although the configuration was excluded, the electrodes may be removed while leaving a part. According to the manufacturing method of the twelfth embodiment of the present invention, the electrode 30 is cut in the middle of the body, and the other part of the electrode except the contact part 36 is removed from the envelope.
  • the front substrate 11, the side walls 18, and the rear substrate 12 sealed by the same processes as those of the above-described tenth embodiment are connected to the cooling chamber 1 of the vacuum processing apparatus. It is sent to 06 and cooled to room temperature. In this state, the contact portion 36 of the electrode 30 is firmly joined to the sealing layer 21. As shown in Fig. 62, the cooling room 106 is equipped with an automatic cutter 70. The automated cutter 70 is extended so as to sandwich the body part 34 of the electrode 30, and the body part 34 is cut near the contact part 36 by the automated cutter.
  • the mounting portion 32 of the cut electrode 30 is chucked by a holding jig (not shown), pulled out in the direction of the arrow, and removed from the rear substrate 12.
  • a holding jig not shown
  • the contact portion 36 of the electrode 30 and a part of the body portion 34 are left on the envelope 10 side, and the other portion of the electrode including the mounting portion 32 is separated from the envelope.
  • the substrate 30 and the sealing layer 21 are easily damaged without being damaged. Can be removed You.
  • the envelope 10 is sent to the unloading chamber 107, and is taken out of the unloading chamber 107.
  • the vacuum envelope 10 of the FED is completed.
  • the two corners of the vacuum envelope 10 are brought into contact with the contact portion 36 of the electrode 30 and the electrode 30. Only the conductor pieces 7 1 including a part of the body 3 4 remain.
  • the manufacturing method and the FED according to the first embodiment configured as described above it is possible to obtain the same operation and effects as those of the above-described embodiment. Also, by removing most of the electrodes, which are unnecessary parts in the FED after sealing, the tip of the electrode remains at the corner of the envelope, but the area is very small.
  • the advantage of the enclosure is that it is easier to handle the envelope. For example, when the FED is installed in a cabinet as a monitor, it is possible to prevent the electrodes from becoming obstacles. The part of the electrode protruding from the substrate can hurt other equipment and workers, or eliminate the problem that the load acts on the envelope via the electrode and the envelope breaks. .
  • the electrode 30 By removing the electrode 30 from the vacuum envelope after cutting, the electrode can be easily removed without damaging the sealing layer or the substrate.
  • the electrodes are cut and removed in the cooling chamber of the vacuum processing apparatus. However, the electrodes are cut in the cooling chamber, and the envelope is passed through the unload chamber to the outside. After the removal, the cut portion of the electrode may be manually removed from rear substrate 12.
  • the electrode was cut by an automatic power meter attached to the cooling chamber of the vacuum processing device.However, the present invention is not limited to this, and a device for cutting and removing the electrode is prepared separately from the vacuum processing device. A configuration in which cutting is performed by using may be used. If the electrode is thin and can be cut easily, the operator may manually cut it with a pliers or the like.
  • a pair of electrodes that energize the sealing layer 21a on the rear substrate side and a pair of electrodes that energize the sealing layer 21b on the front substrate side are separately provided. Electric current may be applied to the sealing layer using the electrodes.
  • the completed FED has a structure in which four conductor pieces 71 corresponding to the electrode tip end remain. It goes without saying that the position, shape and number of the electrodes are not limited to the above embodiment.
  • FIG. 64 shows an FED manufactured by the present embodiment.
  • the other configuration of the FED is the same as that of the FED shown in the above-described embodiment, and the same portions are denoted by the same reference characters and will not be described in detail.
  • the phosphor screen 16 and the A front substrate 11 on which a back 17 is formed and a rear substrate 12 on which an electron-emitting device 22 is formed are prepared.
  • the side wall 18 and the support member 14 are sealed on the inner surface of the back substrate 12 with low melting glass in the air. Thereafter, an aluminum film is applied to a predetermined width and thickness over the entire periphery of the sealing surface of the side wall 18 to form a rectangular frame-shaped sealing layer 21a.
  • An image is applied to the sealing surface facing the side wall of the front substrate 11 in a rectangular frame shape with a predetermined width and thickness, and a rectangular frame corresponding to the sealing layer 21a on the rear substrate 11 side. To form a sealing layer 21b.
  • a pair of conducting electrodes 30 are mounted on the back substrate 12 to which the side walls 18 are joined.
  • Each electrode 30 is formed by bending a copper plate having a thickness of, for example, 0.2 mm as a conductive member.
  • Each electrode 30 is capable of contacting the mounting portion 32 that can be attached to the periphery of the back substrate 12, the tongue piece 44 held by a holding jig described later, and the sealing layer 21 a.
  • Contact portions 36 are integrally provided.
  • Each of the electrodes 30 is attached to the rear substrate while the peripheral portion of the rear substrate 12 is elastically held by the mounting portion 32. At this time, the contact portion 36 of each electrode 30 is brought into contact with the sealing layer 21a formed on the side wall 18 to electrically connect the electrode to the sealing layer.
  • the tongue piece 44 protrudes outward from the rear substrate 12.
  • the rear substrate 12 and the front substrate 11 are arranged facing each other with a predetermined distance therebetween, and are put into a vacuum processing apparatus in this state.
  • the vacuum processing apparatus 100 shown in FIG. 9 is used.
  • the above-described front substrate 11 and rear substrate 12 arranged at a predetermined distance from each other are first loaded into a load chamber 101. After the atmosphere in the loading chamber 101 is changed to a vacuum atmosphere, it is sent to a baking and electron beam cleaning chamber 102.
  • the baking and electron beam cleaning chamber 102 various members are heated to a temperature of 300 ° C. to release gas adsorbed on the surface of each substrate.
  • the electron beam from the electron beam generator (not shown) attached to the baking and electron beam cleaning chamber 102 is used to emit the phosphor screen on the front substrate 11 and the electron-emitting devices on the rear substrate 12. Illuminate the surface.
  • the electron beam is deflected and scanned by a deflector mounted outside the electron beam generator, thereby cleaning the entire phosphor screen surface and the electron emission element surface with the electron beam, respectively.
  • the front substrate 11 and the rear substrate 12 after line cleaning are sent to the cooling chamber 103, cooled to a temperature of about 120 ° C, and then sent to the getter film deposition chamber 104.
  • the barrier film can prevent the surface from being contaminated with oxygen, carbon, and the like, and can maintain an active state.
  • the front substrate 11 and the rear substrate 12 are sent to the assembly room 105.
  • hot plates 131, 1332, and a lower hot plate for holding and heating both substrates are provided inside the assembly chamber 105.
  • a plurality of guide rollers 1338 are provided for moving the substrate in an in-plane direction, that is, a direction parallel to the substrate surface.
  • the contact electrode 135 is attached to the lower hot plate 132.
  • the wiring 134 is connected to a power supply 120 provided outside the assembly room 105.
  • the front substrate 11 and the rear substrate 12 sent to the assembly chamber 105 are first mechanically positioned with respect to the respective hot plates 13 1 and 13 2 by the guide rollers 1 38. At this time, after the front substrate 11 is positioned on the transport jig, the front substrate 11 is suction-fixed to the hot plate 1331 by a known electrostatic suction technique so as not to drop. After the rear substrate 12 is set on the lower hot plate 132, it is positioned by the guide rollers 1338. At the same time, the tongue pieces 44 of the pair of electrodes 30 contact the corresponding contact electrodes 135 and are electrically connected.
  • the hot plate drive mechanism 150 moves the rear substrate 12 toward the front substrate 11 and pressurizes it with a predetermined pressure.
  • the contact portion 36 of each electrode 30 is sandwiched between the sealing layers 21b and 21a of the front substrate 11 and the rear substrate 12 and each electrode is bonded to the sealing layer of both substrates. Electrical contact at the same time.
  • the sealing layer 2 1 is passed from the power supply 120 through the electrode 30.
  • a DC current of 14 OA is applied to a and 21b in the constant current mode, whereby the indium is heated and melted, and the front substrate 11 and the rear substrate 12 are hermetically sealed.
  • the driving mechanism 13 7 moves the holding device 13 6 to the tongue piece 4 4 of the electrode 30 and the tongue piece 4 4 Sandwich.
  • the drive mechanism 13 7 moves the holding device 13 6 along with the electrodes 30 to the outside of the substrate along a direction parallel to the surface of the rear substrate 12, and the respective electrodes 30 are melted. Away from the indium and back substrate 12.
  • the indium is in a molten state, and the electrode 30 can be easily detached from the sealing layer. If the sealing layer 21 is held as it is after the separation of the electrode 30, the melted solid is solidified and the envelope 10 is formed.
  • the envelope 10 after sealing is sent to the cooling chamber 106, cooled to room temperature, and taken out of the unloading chamber 107. Through the above steps, the vacuum envelope 10 of the FED is completed.
  • the sealing and joining of the front substrate 11 and the rear substrate 12 are performed in a vacuum atmosphere. Therefore, the surface adsorbed gas can be sufficiently released by using the baking and the electron beam cleaning in combination, and a getter film having excellent adsorption ability can be obtained.
  • the indium By sealing and joining the indium by energizing and heating it, it is not necessary to heat the entire front and back substrates, and the getter film may be degraded and the substrate may be cracked during the sealing process. Defects can be eliminated. At the same time, shorten the sealing time This makes it possible to achieve a manufacturing method with excellent mass productivity.
  • the electrode By removing the electrode from the insulator in the assembly chamber after energization, the electrode does not remain on the FED after sealing. Therefore, for example, it is possible to prevent the FED from being obstructed when the FED is incorporated into a cabinet as a monitor, or to prevent the enclosure from being broken by the electrodes, and other problems. You. This has the advantage that handling of the envelope after sealing is simplified.
  • a pair of electrodes 30 was attached to the rear substrate 12 and then charged into the vacuum processing apparatus.
  • the present invention is not limited to this.
  • the manufacturing method and the manufacturing apparatus may be such that they are installed and charged into a vacuum processing apparatus without attaching an electrode to the substrate.
  • the FED manufacturing apparatus includes hot plates 13 1, 13 2, and a lower plate for fixing and heating and holding both substrates.
  • the drive mechanism 150 for driving the hot plate 13 2 in the vertical direction, the wiring 13 4 for conducting electricity to the sealing layer, the electrode 14 5, and the electrode 14 5 are the surface of the substrate.
  • 1 34 is connected to a power supply 120 outside the assembly room.
  • the front substrate 11 and the rear substrate 12 sent to the assembling chamber 105 firstly receive guide rollers 13 1, 13 2 corresponding to the respective hot plates 13 1, 13 2. It is mechanically positioned by 1 3 8. At this time, after the front substrate 11 is positioned on the transport jig, the front substrate 11 is attracted to the hot plate 13 1 by a known electrostatic attraction technique so as not to drop. Then, the electrode driving mechanism 13 7 The hot plate driving mechanism 150 moves the electrode 144 and the rear substrate 12 in the direction of the front substrate 11 and pressurizes them at a desired pressure. As a result, each electrode 145 is sandwiched between the sealing layers 21a and 21b of both substrates, and each electrode comes into electrical contact with the sealing layer of both substrates simultaneously.
  • a DC current of 14 OA is supplied from the power supply 120 through the electrode 144 to the sealing layers 21a and 21b in the constant current mode.
  • the electrode driving mechanism 1337 moves the electrode 144 outward from the substrate, and separates it from the molten indium.
  • the indium is in a molten state, so that the electrode 145 can be easily separated from the indium force. If the electrodes are kept as they are for several minutes after the separation of the electrodes, the molten indium solidifies and the envelope 10 is formed.
  • the envelope 10 after sealing is sent to a cooling chamber 106, cooled to room temperature, and taken out from the unloading chamber 107.
  • the electrode 145 for energization is installed in the assembly chamber 105, and is detached from the sealing layer after energization. Therefore, similarly to the thirteenth embodiment, the electrode does not remain on the FED after sealing. Incorporating the FED into the cabinet as a monitor will prevent problems such as electrode failure or envelope rupture caused by the electrodes.
  • two pairs of electrodes are provided, and four pairs of electrodes are brought into contact with the sealing layer on the front substrate side and the sealing layer on the rear substrate side, each of which is energized. It may be a process of pressurizing the substrates. It goes without saying that the position, shape and number of electrodes are not limited to the above embodiment.
  • the present invention is not limited to the various embodiments described above, and can be variously modified within the scope of the present invention.
  • the vacuum envelope having the configuration in which the side wall is sandwiched between the front substrate and the rear substrate is used, but the configuration in which the side wall is integrated with the front substrate or the rear substrate is also used.
  • the configuration may be such that the side walls are joined so as to cover the front substrate and the rear substrate from the side surfaces.
  • the sealing surfaces to be sealed by energizing heating of the sealing material may be two surfaces between the front substrate and the side wall and between the rear substrate and the side wall.
  • the sealing material on the front substrate and the sealing material on the rear substrate are brought into contact with each other and heated by energization.However, after these sealing materials are heated in a non-contact state and then solidified, It may be joined between.
  • the configuration of the phosphor screen and the configuration of the electron-emitting device are not limited to the embodiment of the present invention, but may be other configurations. It may be good. Also,
  • the sealing material is not limited to an insulator, but may be any other material having conductivity. In general, if a metal undergoes a phase change, a sharp change in resistance occurs, so that it can be used as a sealing material. For example, a metal or alloy containing at least one of In, Sn, Pb, Ga, and Bi can be used as the sealing material.
  • the above-mentioned FED has a configuration in which one or two pairs of electrodes are provided, but has a configuration in which at least one electrode is attached to an envelope in advance, and other necessary components are used in the sealing process.
  • a configuration may be adopted in which the electrodes are mounted on an envelope and heated by energization.
  • the plurality of electrodes are arranged so that the energization paths of the sealing layer located between the electrodes are equal in length to each other, or are arranged at positions symmetrical with respect to the sealing layer. As long as it is provided, it may be provided not only at the corner of the envelope but also at another position.
  • the sealing layer made of indium is provided on both the rear substrate side and the front substrate side.
  • a configuration in which the substrate and the substrate are sealed may be employed.
  • the outer shape of the vacuum envelope and the configuration of the support member are not limited to the above embodiment.
  • a matrix-shaped light absorbing layer and a phosphor layer may be formed, and a columnar support member having a cross-shaped cross section may be positioned and sealed to the light absorbing layer.
  • As the electron-emitting device a pn-type cold cathode device, a surface conduction electron-emitting device, or the like may be used.
  • the step of bonding the substrates in a vacuum atmosphere it is also possible to implement in other atmosphere environment.
  • the present invention is not limited to the FED, and can be applied to other image display devices such as an SED and a PDP, or to an image display device in which the inside of the envelope does not have a high vacuum.
  • a sealing operation can be performed stably and quickly, and an image display device and a method of manufacturing an image display device capable of displaying a high-quality image with high reliability. And manufacturing equipment can be provided.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

Selon l'invention, un dispositif externe d'un dispositif d'affichage d'images comprend un substrat avant (11) et un substrat arrière (12) opposé au substrat avant. Le substrat avant présente une partie périphérique fixée à une partie périphérique du substrat arrière afin de former un espace étanche à l'aide d'une couche d'étanchéité (21) contenant un adhésif d'étanchéité conducteur. Une électrode (30) est montée sur le dispositif externe pour permettre une connexion électrique avec la couche d'étanchéité. L'électrode est constituée d'un élément conducteur, en contact électrique avec la couche d'étanchéité, et présente une section de connexion électrique (38) exposée à l'extérieur.
PCT/JP2003/008929 2002-07-15 2003-07-14 Dispositif d'affichage d'images, procede de fabrication de dispositif d'affichage d'images et dispositif de fabrication WO2004008471A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020047020410A KR100686668B1 (ko) 2002-07-15 2003-07-14 화상 표시 장치, 화상 표시 장치의 제조 방법 및 제조 장치
EP03741381A EP1542255A1 (fr) 2002-07-15 2003-07-14 Dispositif d'affichage d'images, procede de fabrication de dispositif d'affichage d'images et dispositif de fabrication
JP2005505099A JPWO2004008471A1 (ja) 2002-07-15 2003-07-14 画像表示装置、画像表示装置の製造方法、および製造装置
US11/035,322 US20050179360A1 (en) 2002-07-15 2005-01-14 Image display device, method of manufacturing image display device, and manufacturing apparatus

Applications Claiming Priority (16)

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JP2002-206176 2002-07-15
JP2002206176 2002-07-15
JP2002242044 2002-08-22
JP2002-242044 2002-08-22
JP2002-265757 2002-09-11
JP2002265757 2002-09-11
JP2003004410 2003-01-10
JP2003-4410 2003-01-10
JP2003012199 2003-01-21
JP2003-12199 2003-01-21
JP2003-26227 2003-02-03
JP2003026227 2003-02-03
JP2003-141994 2003-05-20
JP2003141994 2003-05-20
JP2003-161034 2003-06-05
JP2003161034 2003-06-05

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WO2006064880A1 (fr) * 2004-12-17 2006-06-22 Kabushiki Kaisha Toshiba Materiau de scellement, dispositif d’affichage d’image utilisant le materiau de scellement, procede de production de dispositif d’affichage d’image et dispositif d’affichage d’image produit par le procede de production
JP2007523311A (ja) * 2004-02-05 2007-08-16 チタニウム メタルズ コーポレイション 低温炉精製内の周辺を清掃するための方法および装置
US7303457B2 (en) * 2004-03-02 2007-12-04 Kabushiki Kaisha Toshiba Method of bonding display substrates by application of an electric current to heat and melt a bonding material
JP2009181840A (ja) * 2008-01-31 2009-08-13 Sony Corp 平面型表示装置
JP2012509513A (ja) * 2008-11-20 2012-04-19 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ディスプレイを剥離するための半自動化再生法

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KR100927722B1 (ko) * 2007-12-24 2009-11-18 삼성에스디아이 주식회사 플라즈마 디스플레이 패널 및 그 제조방법
TWI476491B (zh) * 2011-11-07 2015-03-11 Au Optronics Corp 顯示裝置之封裝結構及封裝方法
TWI596980B (zh) * 2012-06-11 2017-08-21 友達光電股份有限公司 基板限位結構
CN105158941B (zh) * 2015-09-16 2018-04-03 中山市拓电电子科技有限公司 一种振动式液晶屏拆解刀具结构
CN115148935A (zh) * 2022-06-28 2022-10-04 昆山国显光电有限公司 连接膜及显示模组

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US5827102A (en) * 1996-05-13 1998-10-27 Micron Technology, Inc. Low temperature method for evacuating and sealing field emission displays
JP2000200543A (ja) * 1999-01-07 2000-07-18 Sony Corp 封止パネル装置及びその製造方法
JP2001229825A (ja) * 2000-02-14 2001-08-24 Toshiba Corp 真空外囲器の製造方法、製造装置、画像表示装置の製造方法、製造装置、並びに、真空外囲器、および画像表示装置
JP2002100311A (ja) * 2000-09-22 2002-04-05 Toshiba Corp 画像表示装置およびその製造方法
WO2002089169A1 (fr) * 2001-04-23 2002-11-07 Kabushiki Kaisha Toshiba Afficheur d'images, procede et dispositif de production de l'afficheur d'images

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US5827102A (en) * 1996-05-13 1998-10-27 Micron Technology, Inc. Low temperature method for evacuating and sealing field emission displays
JP2000200543A (ja) * 1999-01-07 2000-07-18 Sony Corp 封止パネル装置及びその製造方法
JP2001229825A (ja) * 2000-02-14 2001-08-24 Toshiba Corp 真空外囲器の製造方法、製造装置、画像表示装置の製造方法、製造装置、並びに、真空外囲器、および画像表示装置
JP2002100311A (ja) * 2000-09-22 2002-04-05 Toshiba Corp 画像表示装置およびその製造方法
WO2002089169A1 (fr) * 2001-04-23 2002-11-07 Kabushiki Kaisha Toshiba Afficheur d'images, procede et dispositif de production de l'afficheur d'images

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007523311A (ja) * 2004-02-05 2007-08-16 チタニウム メタルズ コーポレイション 低温炉精製内の周辺を清掃するための方法および装置
US7303457B2 (en) * 2004-03-02 2007-12-04 Kabushiki Kaisha Toshiba Method of bonding display substrates by application of an electric current to heat and melt a bonding material
WO2006064880A1 (fr) * 2004-12-17 2006-06-22 Kabushiki Kaisha Toshiba Materiau de scellement, dispositif d’affichage d’image utilisant le materiau de scellement, procede de production de dispositif d’affichage d’image et dispositif d’affichage d’image produit par le procede de production
JP2009181840A (ja) * 2008-01-31 2009-08-13 Sony Corp 平面型表示装置
JP2012509513A (ja) * 2008-11-20 2012-04-19 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ディスプレイを剥離するための半自動化再生法

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JPWO2004008471A1 (ja) 2005-11-10
TWI278886B (en) 2007-04-11
KR20050010928A (ko) 2005-01-28
EP1542255A1 (fr) 2005-06-15
CN1663006A (zh) 2005-08-31
KR100686668B1 (ko) 2007-02-27
TW200411695A (en) 2004-07-01

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