WO2003098702A1 - Detecteur optique, dispositif a tete optique, dispositif de traitement de donnees optiques et procede de traitement de donnees optiques - Google Patents

Detecteur optique, dispositif a tete optique, dispositif de traitement de donnees optiques et procede de traitement de donnees optiques Download PDF

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Publication number
WO2003098702A1
WO2003098702A1 PCT/JP2003/005669 JP0305669W WO03098702A1 WO 2003098702 A1 WO2003098702 A1 WO 2003098702A1 JP 0305669 W JP0305669 W JP 0305669W WO 03098702 A1 WO03098702 A1 WO 03098702A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
resin body
photodetector
optical
semiconductor chip
Prior art date
Application number
PCT/JP2003/005669
Other languages
English (en)
Japanese (ja)
Inventor
Tomotada Kamei
Shin-Ichi Kadowaki
Original Assignee
Matsushita Electric Industrial Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co., Ltd. filed Critical Matsushita Electric Industrial Co., Ltd.
Priority to JP2004506095A priority Critical patent/JP3934648B2/ja
Priority to US10/511,991 priority patent/US7154838B2/en
Priority to AU2003235850A priority patent/AU2003235850A1/en
Publication of WO2003098702A1 publication Critical patent/WO2003098702A1/fr

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/13—Optical detectors therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a photodetector, an optical head device using the photodetector, an optical information processing device, and an optical information processing method.
  • Optical memory technology using high-density and large-capacity optical storage media with pit-like patterns has been applied to digital audio discs, video discs, document file discs, and even data files in the 1980s.
  • the compact disc (CD) which irradiates light with a wavelength of about 780 nm to record and reproduce information, was illuminated with light with a wavelength of about 650 nm in the 1990s.
  • Digital versatile disks (DVDs) which can record and reproduce information with higher density and larger capacity than CDs, have been put into practical use, and they are widely used today.
  • optical memory technology information is recorded and reproduced on an optical storage medium by a minutely focused light beam.
  • the accuracy and reliability of the recording / reproducing operation largely depend on the accuracy and reliability of the optical head device.
  • the basic functions of the optical head device are the function of converging the light emitted from the light source to a small spot diameter that is diffraction-limited, the signal necessary for focus control to maintain the light spot on the optical storage medium, Signals required for tracking control to position the light spot in the middle of a specific groove (track), and functions to detect pit signals are roughly classified.
  • a photodetector is one of the elements that make up an optical head device.
  • Can be The photodetector receives the light reflected by the optical storage medium, converts the light into an electric signal (photoelectric conversion), and records an information signal (hereinafter referred to as an “RF signal”) recorded on the optical storage medium, a focus error signal ( It detects and outputs signals required for recording and reproduction, such as the “FE signal” and tracking error signal (hereinafter “TE signal”).
  • Photodetectors are also used to control the output of a light source by receiving part of the light emitted from the light source.
  • photoelectric conversion is generally performed by a semiconductor having a structure in which a photoelectric conversion region and an attached circuit are formed as necessary.
  • the photodetector In order to perform highly reliable recording and reproduction, it is natural that the photodetector must also have high reliability.
  • FIG. 7 shows an example of a conventional photodetector.
  • the semiconductor chip 51 is fixed on a lead frame 54, and the electrodes on the semiconductor chip 51 and the leads of the lead frame 54 are electrically connected by bonding wires 55.
  • the lead frame 54 is an input / output terminal for electric signals and power, and the photodetector is electrically connected to a flexible printed wiring board or the like (not shown) by the lead frame 54.
  • a part of the semiconductor chip 51, the bonding wire 55, and the lead frame 54 are sealed with a transparent resin body 52, and the bonding wire 55, the semiconductor chip 51, and the bonding wire 55 are formed.
  • the surface of the semiconductor chip 51 on which the joints, circuits, etc. of the semiconductor chip 51 are formed is protected by the resin body 52 so as not to be damaged by an impact during handling.
  • the light 56 reflected by the optical storage medium and containing a signal component having information and the like recorded on the optical storage medium passes through the resin body 52 and reaches the photoelectric conversion area 51 a on the semiconductor chip 51. Is photoelectrically converted.
  • the photoelectrically converted signal is output as an electrical signal from the lead frame 54 via the bonding wire 55. Therefore, the resin body 52 has the necessary transmittance for the light 56. And a material having good moldability, for example, epoxy resin is used.
  • optical recording media capable of recording and reproducing information with higher density and larger capacity than DVDs have been developed.
  • the wavelength of the light source used for recording and reproducing information on the optical recording medium has been changed to red. It is considered to shorten the wavelength from a light source (wavelength of about 660 nm) to a blue light source (wavelength of about 400 nm).
  • the wavelength of light used for recording / reproducing on an optical recording medium is, for example, about 4 OO nm, the light incident on the photodetector shown in FIG.
  • the light transmissive area 61 is gradually deformed in several hours to several hundred hours, and the optical path of light passing through the light transmissive area 61 is affected, so that the light reflected by the optical recording medium remains in the correct profile. It is impossible to reach the photoelectric conversion region 51 a on the chip 51. As a result, the photodetector cannot sufficiently detect a desired electric signal such as the FE signal and the TE signal. Therefore, in the optical information processing device using the optical head device including such a photodetector, there is a problem that the focus control unit and the track control unit cannot perform appropriate operations.
  • a photodetector according to the present invention is a photodetector comprising: a semiconductor chip that converts received light into an electric signal; and a resin body sealing the semiconductor chip. And wherein at least a light transmitting region of the resin body on the light incident side where the light is transmitted is covered by the protection portion.
  • An optical head device includes a light source, a light-collecting unit that receives light emitted from the light source and focuses the light on an optical storage medium, and receives the light reflected by the optical storage medium. And a photodetector that converts the received light into an electric signal, and a resin body that seals the semiconductor chip. And a protection portion, wherein at least a light transmitting region of the resin body on the light incident side where the light is transmitted is covered by the protection portion.
  • An optical information processing apparatus includes: a light source; a light-collecting unit that receives light emitted from the light source and focuses the light on an optical storage medium; A light detector that converts the received light into an electric signal, wherein the light detector includes: a semiconductor chip that converts the received light into an electric signal; and a resin body that seals the semiconductor chip.
  • a light head device further comprising a protection unit, wherein at least a light transmitting region of the surface of the resin body on the light incident side where the light is transmitted is covered by the protection unit.
  • An electrical signal processing unit that receives a signal output from the optical head device and outputs a predetermined signal; and at least one position selected from the optical head device and the light collecting unit that receives the predetermined signal. And a drive unit for changing the .
  • An optical information processing method includes: a light source; a light-collecting unit that receives light emitted from the light source and focuses the light on an optical storage medium; A photodetector for converting the received light into an electric signal, the photodetector comprising: a semiconductor chip for converting the received light into an electric signal; A resin body in which the body chip is sealed, further comprising a protection unit, wherein at least the light transmitting region of the surface of the resin body on the side where the light is incident, the light transmitting region, An optical head device covered by the protection unit; an electric signal processing unit that receives a signal output from the optical head device and outputs a predetermined signal; and receives the predetermined signal and receives the optical head device.
  • An optical information processing method performed by using an optical information processing device including a driving device and a driving unit that changes at least one position selected from the light condensing unit, the method comprising: If the transmittance is 1 0%, e wavelength from the light source, lambda 1 ⁇ lambda ⁇ 1. bRIEF dESCRIPTION oF 5 ⁇ lambda c drawings, wherein the emitting light satisfying 1 relationship
  • FIG. 1 is a diagram illustrating the relationship between the wavelength of light incident on a photodetector and the light transmittance.
  • FIG. 2 is a sectional view showing an example of the photodetector of the present invention.
  • FIG. 3 is a sectional view showing another example of the photodetector of the present invention.
  • FIG. 4 is a sectional view showing another example of the photodetector of the present invention.
  • FIG. 5 is a configuration diagram showing an example of the optical head device of the present invention.
  • FIG. 6 is a schematic diagram showing an example of the optical information processing device of the present invention.
  • FIG. 7 is a cross-sectional view showing an example of a conventional photodetector. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIG. 1 shows the relationship between the wavelength of light incident on the photodetector shown in FIG. 7 and the light transmittance.
  • the resin body 52 is made of an epoxy resin, and the thickness d is 1 mm.
  • the light transmittance is almost constant in the region where the wavelength of light is longer than 450 nm, and gradually decreases as the wavelength becomes shorter in the region where the wavelength of light is shorter than 450 nm.
  • the wavelength is almost zero at about 320 nm.
  • Most of the light absorbed by the resin body 52 becomes heat and is dissipated, but a part of the absorbed light becomes an energy source for breaking the covalent bond of the resin forming the resin body 52.
  • the wavelength of light required to break a single bond is 300 to 400 nm
  • the wavelength of light required to break a double bond is 150 to 20 nm. 0 nm. Therefore, even if the resin body 52 is irradiated with light having a wavelength longer than 400 nm, it does not reach the energy for breaking the double bond at all, and has almost no energy to break the single bond. Since it does not reach, it has been considered that the resin body 52 does not deform.
  • the covalent bond may be broken even by light having a wavelength longer than 400 nm with a small probability.
  • the diameter of the light converged and incident on the photoelectric conversion region 51 a is as small as about several 10 m, and the light density per unit area in the photoelectric conversion region 51 a is extremely high. May cause multiphoton absorption that absorbs two or more photons. For example, if the resin body 52 absorbs two photons, the transparent resin 52 absorbs twice as much energy as reacting with one photon, and the energy may break a covalent bond. .
  • the resin forming the resin body 52 contains atoms such as carbon, hydrogen, and oxygen, and these atoms are covalently bonded to each other. Make sure that the resin body 52 is irradiated with light.
  • the above atom is activated. Normally, when light irradiation is stopped, the activated atoms return to their original bonding state.
  • the light transmitting region 61 is irradiated with light in an atmosphere where oxygen is present, the covalent bonds of oxygen molecules existing near the light transmitting region 61 are also broken, and the oxygen atoms are also activated. Therefore, it was found that the above-mentioned atom whose covalent bond was broken and the oxygen atom were bonded, and as a result, the resin body 52 was gradually deformed.
  • the present inventors arrived at covering at least the light transmitting area of the surface of the resin body 2 on the light incident side where the light is transmitted with the light transmitting protective portion so as not to come into contact with oxygen. .
  • FIG. 2 is a sectional view showing an example of the photodetector of the present invention.
  • the photodetector according to the present embodiment includes a semiconductor chip 1, a lead frame 4, a bonding wire 15, a light-transmitting resin body 2, and a light-transmitting protective layer 3.
  • the semiconductor chip 1 is mounted on a lead frame 4, and the semiconductor chip 1 and the lead frame 4 are electrically connected by bonding wires 15. Part of the semiconductor chip 1, the bonding wire 5, and the lead frame 4 are sealed with the resin body 2.
  • a protective layer 3 is laminated on the surface of the resin body 2 on the incident side of the converging light 6 so that at least the light transmitting area 11 through which the converging light 6 passes does not contact oxygen in the air.
  • the photodetector of the present embodiment at least the light transmitting area 11 of the resin body 2 on the incident side of the convergent light 6 through which the convergent light 6 is transmitted is covered by the protective layer 3.
  • the resin body 2 is irradiated with high-density light and is included in the resin body 2 in the light transmission area 1 1 Atoms are activated Even after that, the bond between the activated atom and the oxygen atom can be suppressed, and as a result, the deformation of the resin body 2 can be suppressed, and the deterioration of the optical characteristics of the photodetector can be suppressed.
  • the photodetector of this embodiment in which the deterioration of the optical characteristics is suppressed as described above can accurately detect and output the FE signal, the TE signal, the RF signal, and the like.
  • the semiconductor chip 1 has a photoelectric conversion region 1a for converting received light into a current signal, and a circuit 1b for amplifying or converting the current signal output from the photoelectric conversion region 1a into a voltage signal. Is embedded.
  • the lead frame 4 contains a conductive material, for example, a metal such as copper (Cu) or an alloy (Fe-Ni), and is fixed to a wiring board such as a flexible printed wiring board by soldering or the like. In this state, it functions as a terminal for inputting and outputting electric signals and electric signals such as the electric signal or the voltage signal.
  • the bonding wire 5 is a thin metal wire, for example, a fine gold wire, and leads a current signal or a voltage signal obtained by the semiconductor chip 1 to a lead frame or introduces (supplies) electric power to the semiconductor chip 1. ing.
  • the material of the protective layer 3 is not particularly limited as long as it has little reaction with light and oxygen and has a light transmittance of a predetermined value or more, but is an inorganic substance having a bond dissociation energy larger than an organic substance such as an epoxy resin. Is preferred.
  • oxidation silicon, silicon nitride it is preferable c the inorganic compound containing at least one inorganic compound selected from the group consisting of magnesium fluoride and tantalum oxide, the reflection of the insulating film and the optical components of the semiconductor chip Because it is also used for the prevention film, the type of material used and the number of manufacturing devices can be reduced, and the cost can be reduced.
  • the protective layer preferably has a transmittance of substantially 90% or more, and more preferably 95% or more, of incident light excluding the amount of light reflected on the surface. This is because the higher the light transmittance, the lower the light absorptivity, and the less the light is likely to deteriorate.
  • the transmittance is 90% or more, deterioration of the protective layer due to light is small, and when the transmittance is 95% or more, it can be considered that there is substantially no deterioration.
  • the protective layer 3 does not require a sealing function unlike the resin body 2, it does not need to be formed by a transfer molding method in which a resin is melted and poured, and there is no particular limitation on the forming method. For example, it is preferable to form by a sputtering method, an evaporation method or a spin coating method. This is because the formation of the protective layer 3 is easy.
  • the thickness of the protective layer 3 is appropriately determined according to the use conditions of the photodetector, but the wavelength of the light source is in a range of 390 nm to 420 nm, and the power of the convergent light 6 is several hundreds. When it is used for a general optical head device of W to several mW, it is preferably at least 20 nm. If it is too thin, oxygen and water vapor in the air may permeate. Since water vapor contains oxygen atoms, when the water vapor permeates the protective layer 3, the resin body 52 may be deformed as in the case where the resin body 2 is irradiated with light in an atmosphere where oxygen is present.
  • the resin body 52 does not deform even after being used for several thousand hours, and the FE signal, the TE signal, the RF signal, and the like are not observed. It can detect and output with high accuracy.
  • the protective layer 3 is preferably provided so as to function as an antireflection film. If the protective layer 3 has an antireflection function, the loss of light due to reflection can be reduced, so that the optical gain efficiency of the photodetector can be increased.
  • the material and thickness of the protective layer 3 may be determined based on the design method of the antireflection film. The method of designing the anti-reflection film is generally well known and will not be described.
  • the material of the resin body 2 is not particularly limited as long as it has a desired transmittance for incident light.
  • the photodetector of the present embodiment includes the protective layer 3, the material of the resin body 2 is less resistant to deterioration due to reaction with light. Can be selected with priority on good moldability.
  • epoxy resin, polyolefin resin, polyolefin, etc. can be used.
  • epoxy resin, which has a small load on the bonding wire 5 during molding, is easy to mold, and has low pressure and good moldability. Is preferred.
  • the light absorption of the resin body 2 is preferably 10% or less (transmittance of 90% or more). When the light absorption of the resin body 2 is 10% or less, it is possible to provide a photodetector in which deformation of the light transmission region 11 due to received light is further suppressed.
  • the light incident side surface is parallel to the surface of the semiconductor chip 1. It is formed by a transfer molding method or the like.
  • the thickness d from the light incident surface of the resin body 2 to the surface of the semiconductor chip 1 on which the photoelectric conversion region 1a is formed is, for example, 1 mm.
  • the light incident on the photodetector is the light reflected and converged on the optical storage medium, but may be a part of the light emitted from the light source.
  • the detector may be for detecting a signal used to control the output of the light source.
  • the circuit lb is provided on the semiconductor chip 1, but is not limited to this.
  • the semiconductor chip 1 when the circuit 1b is provided on the semiconductor chip 1, the semiconductor chip 1 generates heat due to the current flowing through the circuit 1b.
  • the degree to which the resin body 2 is deformed becomes more remarkable as the temperature of the resin body 2, that is, the temperature of the semiconductor chip becomes higher.
  • the circuit 1b is formed on the semiconductor chip at a position distant from the photoelectric conversion region 1a, or provided in another part of the photodetector that is not sealed by the resin body 2, the circuit 1b is generated. Heat transmitted to the light transmission area 1 1 Therefore, the deformation of the resin body 2 can be suppressed, and the detection and output of the stabilized FE signal, TE signal, RF signal, and the like can be performed.
  • the semiconductor chip 1 and the lead frame 4 are electrically connected using the bonding wires 5, but the connection method between the semiconductor chip 1 and the lead frame 4 is particularly limited. Instead, the semiconductor chip 1 and the lead frame 4 may be connected by wireless bonding such as a flip-chip method. If the connection method is wireless bonding, injection molding and other molding methods, which are performed at a higher temperature and higher pressure than the transfer molding method, can be applied, increasing the degree of freedom in the manufacturing method .
  • the protective layer 2 is a single layer in the example shown in FIG. 2, but is not limited thereto, and may have a multilayer structure in which two or more layers made of different materials are laminated.
  • FIG. 3 is a sectional view showing an example of the photodetector of the present invention. 3, components having the same functions as the components shown in FIG. 2 are denoted by the same reference numerals, and description thereof will be omitted.
  • a light-transmitting flat plate-shaped body 7 disposed at least above the light-transmitting region 11;
  • the sealing member 8 which is bonded to the plate member 7 and the resin member 2 and is arranged so as to avoid the light transmission region 11, the light incident surface of the resin member 2, the plate member 7 and the sealing member
  • the light transmitting region 11 is covered with the inert gas sealed in the space 9 surrounded by the material 8 so as not to contact oxygen in the air.
  • the photodetector of the present embodiment at least the light transmitting area 11 of the light incident surface of the resin body 2 is not filled in the plate-shaped body 7, the sealing material 8, and the space 9. Since it is covered by the protection part containing the active gas, the same as in the first embodiment 03 05669
  • the photodetector of the present embodiment can accurately detect and output the FE signal, the TE signal, the RF signal, and the like.
  • the plate-like body 7 contains a material that reacts less with oxygen than the resin body 2 when exposed to light of a predetermined wavelength compared to the resin body 2 or contains a material that does not react with oxygen, and is resistant to incident light.
  • a material that reacts less with oxygen than the resin body 2 when exposed to light of a predetermined wavelength compared to the resin body 2 or contains a material that does not react with oxygen, and is resistant to incident light.
  • quartz glass or borosilicate glass is preferable.
  • the plate-like body 7 has a transmittance of substantially 90% or more, and more preferably 95% or more, of incident light excluding the amount of light reflected on the surface. This is because the higher the light transmittance, the lower the light absorptivity, and the less the deterioration due to light.
  • the transmittance 90% or more, deterioration of the plate-like body 7 due to light is small, and when the transmittance is 95% or more, it can be considered that there is substantially no deterioration.
  • the type of the inert gas sealed in the space 9 is not particularly limited as long as it does not react with the resin body 2 when exposed to light and does not hinder the transmission of light. It is preferable to contain nitrogen.
  • the inert gas sealed in the space 9 may be argon.
  • the space 9 may be filled with a gas other than the inert gas, and may contain oxygen if the oxygen concentration in the atmosphere is about 1 Z 10 or less (about 2.5%). You may.
  • the sealing material 8 has a small outgas generation amount (1% or less), for example, an ultraviolet curing adhesive, a silicone adhesive, an epoxy adhesive, or the like. Good. This is because the art gas generated from the sealing material 8 and mixed into the inert gas in the space 9 is combined with atoms on the surface of the resin body 2 when activated by irradiation with light. . Although the degree of the coupling depends on the intensity of the irradiated light, if the combined gas forms a lens on the surface of the resin body 2, the light-condensing position on the resin body 2 shifts. As a result, light is not properly received by the semiconductor chip 1.
  • a small outgas generation amount 1% or less
  • the sealing material 8 when the sealing material 8 is arranged so as to avoid the light transmission region 11, there is no restriction on the light transmission of the sealing material 8, but the sealing material 8 is incident.
  • the space 9 may be filled with the sealing material 8 if it has a desired transmittance for light, that is, if it is substantially transparent to incident light. That is, as shown in FIG. 4, a protection portion that covers the light transmission region 11 so as not to contact oxygen is provided with a plate-shaped body 7 disposed above the light incident side surface of the resin body 2 and a resin body. It may be composed of at least a light-transmitting sealing material 10 that joins the light transmitting region 11 and the plate-like body 7 on the surface of the body 2 on the light incident side.
  • the surface of the light-transmitting plate-shaped body 7 of the photodetector on the incident light side is a flat surface.
  • Optical functions such as providing a desired wavefront and splitting a part of the light 6 can be provided, and a compact optical head device can be realized.
  • FIG. 5 shows an example of the optical head device of the present invention.
  • a light source for example, a semiconductor laser 21 capable of emitting laser light having a wavelength in a range of 390 nm and ⁇ ⁇ 420 nm, a condensing lens 23, It includes a mirror 24 for bending the optical path, an objective lens 25, a beam splitter 27 for separating the return light reflected from the optical storage medium 26, and a photodetector 28.
  • Detector 28 includes Embodiment 1 or Embodiment 2.
  • a photodetector of form 2 is used.
  • a laser beam 22 having a wavelength of, for example, 405 nm emitted from the semiconductor laser 21 becomes parallel light by the condenser lens 23 and an optical path by the mirror 24. Is bent and condensed on the optical storage medium 26 by the objective lens 25. Next, the light reflected by the optical storage medium 26 returns through the objective lens 25, the mirror 24, and the condenser lens 23 in this order, is reflected by the beam splitter 27, and It is incident on 8.
  • the light incident on the photodetector 28 is photoelectrically converted by the photodetector 28, and the photodetector 28 detects the RF signal of the pit row on the optical storage medium 26 and the trace of the pit row. Perform Detects and outputs the FE signal and TE signal.
  • the operation at the time of recording is basically the same as that at the time of reproduction, but the amount of light emitted from the semiconductor laser is larger than at the time of reproduction.
  • the optical head device of the present embodiment uses the photodetector of the first or second embodiment, a high-precision FE signal, TE signal, RF signal, and the like can be obtained from the photodetector 28. And good recording and reproduction can be realized.
  • the wavelength ⁇ of the semiconductor laser (light source) is ⁇ ⁇ ⁇ ⁇ It is preferable that the relationship of ⁇ ⁇ 1.5 ⁇ ⁇ 1 is satisfied. If the wavelength ⁇ of the light source satisfies the above relationship, deterioration of the resin body 2 due to light is suppressed, and as a result, a highly reliable optical head device capable of realizing good recording and reproduction can be provided. is there.
  • the wavelength ⁇ of the light source is 390 nm and ⁇ ⁇ 420 nm.
  • the resin forming the resin body 2 not only the breaking of double bonds but also the breaking of single bonds can be effectively suppressed, and high-density, large-capacity light This is because a highly reliable optical head device capable of recording and reproducing data on and from a storage medium can be provided.
  • the photodetector is used for detecting the RF signal, the FE signal, and the TE signal.
  • the photodetector is used for detecting the signal for controlling the output of the light source. Is also good. In this case, it is possible to provide an optical head device capable of realizing stable output control and good recording and reproduction.
  • FIG. 6 is a schematic diagram showing an example of the optical information processing device of the present invention.
  • the optical information processing device includes an optical head device 31, an electric signal processing unit 33 that receives and calculates a signal output from the optical head device 31, and outputs a predetermined signal.
  • a drive unit that changes at least one position selected from the optical head device 31 and the condensing unit 25 (objective lens) (see FIG. 5) of the optical head device 31. (Not shown), a motor 32 and a power supply 34.
  • the electric signal processing unit 33 is, for example, a circuit board.
  • the power supply unit 34 is a connection terminal for a power supply or an external power supply, and supplies electricity to the motor 32 and the above-described driving unit.
  • the connection terminal for the power supply or the external power supply may be provided in each of the driving units such as the tracking control unit and the focus control unit.
  • the optical information processing device of the present embodiment uses the optical head device of the third embodiment, it can receive high-precision FE signal, TE signal, RF signal, and the like from the optical detector of the optical head.
  • the wavelength of the light source 21 (see FIG. 5) of the optical head is set to ⁇ , 2 (see FIGS. 2 to 4), when the transmittance of light of wavelength ⁇ 1 is 10%, the wavelength ⁇ from the light source 21 satisfies the relationship of ⁇ 1 ⁇ ⁇ 1.5 ⁇ ⁇ 1 light Is preferably emitted. If light that satisfies the above relationship is emitted from the light source, deterioration of the resin body 2 due to light is suppressed, and as a result, good recording and reproduction can be realized.
  • the resin forming the resin body 2 can effectively suppress not only the break of the double bond but also the break of the single bond, and also enables recording and reproduction of a high-density and large-capacity optical storage medium.
  • the photodetector the optical head device, the optical information processing device, and the optical information processing method of the present invention, it is possible to suppress deterioration of the optical characteristics of the photodetector, so that good recording and reproduction can be performed.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)

Abstract

L'invention concerne un détecteur optique comprenant une puce (1) à semi-conducteur permettant de convertir la lumière reçue en un signal électrique, et un corps (2) de résine translucide encapsulant la puce (1) à semi-conducteur. Ce détecteur optique comprend en outre un élément de protection (3) qui couvre au moins la zone (11) de transmission optique de la surface du corps de résine sur laquelle la lumière arrive et à travers laquelle la lumière est transmise. La couverture de la zone (11) de transmission optique par un élément de protection (3) présentant une réactivité à la lumière inférieure à celle du corps (2) de résine permet de supprimer la déformation du corps (2) de résine par la lumière, et de supprimer ainsi la dégradation des caractéristiques optiques du détecteur optique.
PCT/JP2003/005669 2002-05-15 2003-05-06 Detecteur optique, dispositif a tete optique, dispositif de traitement de donnees optiques et procede de traitement de donnees optiques WO2003098702A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004506095A JP3934648B2 (ja) 2002-05-15 2003-05-06 光検出器、光ヘッド装置、光情報処理装置および光情報処理方法
US10/511,991 US7154838B2 (en) 2002-05-15 2003-05-06 Optical detector, optical head device, optical information processing device, and optical information processing method
AU2003235850A AU2003235850A1 (en) 2002-05-15 2003-05-06 Optical detector, optical head device, optical information processing device, and optical information processing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002139610 2002-05-15
JP2002-139610 2002-05-15

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US (1) US7154838B2 (fr)
JP (1) JP3934648B2 (fr)
CN (1) CN100448032C (fr)
AU (1) AU2003235850A1 (fr)
WO (1) WO2003098702A1 (fr)

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CN103763035A (zh) * 2014-02-11 2014-04-30 沈昌生 为激光通信实验目标光电管加装受光罩技术

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JP4133896B2 (ja) * 2004-03-29 2008-08-13 シャープ株式会社 光ピックアップ装置
JP2008041209A (ja) * 2006-08-09 2008-02-21 Tdk Corp 受光素子及びそれを用いた光ヘッド並びにそれを用いた光記録再生装置
DE102006038302A1 (de) * 2006-08-16 2008-02-21 Atmel Germany Gmbh Sensoreinheit und optischer Aufnehmer für eine Abtasteinrichtung
US8213286B2 (en) * 2007-07-30 2012-07-03 Sanyo Electric Co., Ltd. Photodetector and optical pickup apparatus including the same
US8630041B2 (en) * 2009-07-17 2014-01-14 International Business Machines Corporation Data storage assembly with diamond like carbon antireflective layer
CA2780068A1 (fr) * 2009-11-06 2011-05-12 Schlumberger Canada Limited Port de communication base sur la lumiere utilisable sur des outils de fond de puits
US9714562B2 (en) 2009-11-06 2017-07-25 Schlumberger Technology Corporation Downhole logging communication module
CN102483935B (zh) * 2010-06-21 2015-05-20 松下电器产业株式会社 光学头以及光信息装置
JP6721361B2 (ja) * 2015-03-23 2020-07-15 エイブリック株式会社 光センサ装置及び光センサ装置の製造方法
US9716190B2 (en) * 2015-03-23 2017-07-25 Sii Semiconductor Corporation Optical sensor device and method of manufacturing optical sensor device
EP3139412B1 (fr) * 2015-09-04 2018-06-13 IDT Europe GmbH Dispositif optoélectronique et son procédé de fabrication

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Publication number Priority date Publication date Assignee Title
EP1953231A1 (fr) 2007-02-05 2008-08-06 Empresa Brasileira de Pesquisa Agropecuaria - EMBRAPA Compositions et procédés pour modifier l'expression des gènes en utilisant le promoteur du gène de protéine de conjugaison d'ubiquitine de coton
CN103763035A (zh) * 2014-02-11 2014-04-30 沈昌生 为激光通信实验目标光电管加装受光罩技术

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JPWO2003098702A1 (ja) 2005-09-22
US20060164959A1 (en) 2006-07-27
AU2003235850A1 (en) 2003-12-02
CN100448032C (zh) 2008-12-31
CN1653622A (zh) 2005-08-10
US7154838B2 (en) 2006-12-26
JP3934648B2 (ja) 2007-06-20

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