WO2003088477A1 - Attenuateur variable - Google Patents

Attenuateur variable Download PDF

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Publication number
WO2003088477A1
WO2003088477A1 PCT/JP2002/007558 JP0207558W WO03088477A1 WO 2003088477 A1 WO2003088477 A1 WO 2003088477A1 JP 0207558 W JP0207558 W JP 0207558W WO 03088477 A1 WO03088477 A1 WO 03088477A1
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WO
WIPO (PCT)
Prior art keywords
resistor
switch transistor
variable attenuator
parallel
phase correction
Prior art date
Application number
PCT/JP2002/007558
Other languages
English (en)
Japanese (ja)
Inventor
Eiji Taniguchi
Chiemi Sawaumi
Noriharu Suematsu
Kenichi Maeda
Takayuki Ikushima
Original Assignee
Mitsubishi Denki Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Denki Kabushiki Kaisha filed Critical Mitsubishi Denki Kabushiki Kaisha
Publication of WO2003088477A1 publication Critical patent/WO2003088477A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor

Definitions

  • the present invention relates to a variable attenuator that can reduce a passing phase difference generated when switching a passing amplitude.
  • FIG. 1 is a configuration diagram of a conventional variable attenuator described in, for example, the Proceedings of the IEICE General Conference, 1999. As shown in Fig. 1, this variable attenuator is composed of only a resistor and a transistor for switching. In Fig.
  • 1, 1 is an input terminal for a high-frequency signal
  • 2 is an output terminal for a high-frequency signal
  • 3 a, 3b, 3c are switching transistors
  • 4a, 4b are control terminals for controlling the on / off of the switching transistors 3a, 3b, 3c for switching the passing amplitude
  • 5a is a series resistor
  • 6a and 6b are parallel resistors
  • 8 is a series circuit section composed of a switch transistor 3a and a series resistor 5a
  • 9a is a switch transistor 3b and a parallel resistor 6a.
  • 9b is a switch transistor 3c
  • a second parallel circuit section is composed of a parallel resistor 6b
  • 15 is a power supply terminal
  • 16a, 16b, 16c Is a gate resistor connected to each of the switch transistors 3a, 3b, 3c, and 17 is applied from the control terminal 4a.
  • Inverter 18 for inverting control signals, 18 is a single bit composed of series circuit section 8, parallel circuit sections 9a and 9b, gate resistors 16a, 16b and 16c, and inverter 17 Variable attenuator.
  • the conventional variable attenuator shown in Fig. 1 uses a 5-bit variable attenuator composed of five single-bit variable attenuators to adjust the amplitude of the high-frequency signal input from input terminal 1 to 3 2 The amplitude value is switched to the state and output from output terminal 2. '
  • variable attenuator 18 will be described to facilitate comparison with the variable attenuator according to the present invention. Since the conventional variable attenuator is a combination of the single-bit variable attenuator 18, it can be compared with the variable attenuator according to the present invention by describing only the single-bit variable attenuator 18. .
  • the control signals applied from the control terminals 4 a and 4 b are input to the switch transistors 3 b and 3 c as they are and the inverter 17
  • the inverted signal is input to the switch transistor 3a via the switch, and 3a and 3b and 3c are turned on and off, respectively, so that the high frequency input from the input terminal 1 is turned on. It changes the signal amplitude.
  • the high-frequency signal input from the input terminal 1 has a very high on-resistance exhibited by the switch transistor 3a. If the off-capacitance exhibited by 3b and 3c is very small, the signal passes through the single-bit variable attenuator 18 with little attenuation.
  • the switching transistor 3a when the switching transistor 3a is in an attenuated state, that is, when the switching transistor 3a is in an off state and the switching transistors 3b and 3c are in an on state, the high-frequency signal input from the input terminal 1 is turned off by the switching transistor 3a If the capacitance is very small and the on-resistance provided by 3b and 3c is very small, it can be regarded as a ⁇ -type attenuator consisting of a series resistor 5a and a parallel resistor 6a and 6c. The high-frequency signal input from input terminal 1 is connected to a series resistor that constitutes a pi-type attenuator. It attenuates with the amount of attenuation set by the resistance 5a and the parallel resistors 6a and 6c.
  • the conventional variable attenuator is configured as described above, when the passing amplitude is switched by the switch transistor, the off-state capacitance component and parasitic component of the transistor (technical limitations in transistor manufacturing) However, there is a problem that the passing phase fluctuates due to the path difference in the length of the transmission line when the IC is used.
  • the present invention has been made in order to solve the above-described problems, and has as its object to realize a variable attenuator capable of reducing a passing phase variation at the time of passing amplitude switching. Disclosure of the invention
  • a variable attenuator includes a series circuit section having a first switch transistor and a first resistor connected in parallel, a second switch transistor connected in series, and a second switch transistor. And a second parallel circuit section having a third switch transistor and a third resistor connected in series.
  • Variable attenuator that varies the amplitude of the input high-frequency signal and outputs it to the output terminal, and transmits the signal from the input terminal to the output terminal of at least one of the first parallel circuit unit and the second parallel circuit unit.
  • a phase correction reactance element for correcting a passing phase difference of a high-frequency signal to be transmitted.
  • the phase correction reactance element is connected to at least one end of the first switch transistor and the first resistor. Things.
  • the difference in the passing phase of the high-frequency signal can be corrected, so that the variation in the passing phase that occurs when the passing amplitude is switched can be reduced.
  • a variable attenuator includes a DC operating point determining resistor that is connected in parallel with a phase correction reactance element and that avoids an unstable state of the DC operating point.
  • a variable attenuator includes: a first series circuit portion having a first switch transistor and a first resistor connected in parallel; and a fourth switch transistor connected in parallel.
  • a second series circuit section having a second resistor and a fourth resistor; and a parallel circuit section having a second switch transistor and a second resistor connected in series.
  • the parallel circuit unit has a phase correction reactance element that corrects the passing phase difference of the high-frequency signal transmitted from the input terminal to the output terminal. Things.
  • the phase correction reactance element is connected to at least one end of the first switch transistor, the fourth switch transistor, the first resistor, and the fourth resistor. Is what you do.
  • FIG. 1 is a configuration diagram of a conventional variable attenuator.
  • FIG. 2 is a configuration diagram of the variable attenuator according to the first embodiment.
  • FIG. 3 is an equivalent circuit diagram of a reference state of the variable attenuator according to the first embodiment.
  • FIG. 4 is an equivalent circuit diagram of the variable attenuator according to the first embodiment in an attenuated state.
  • FIG. 5 is an equivalent circuit diagram in Embodiment 1 in which phase correction inductors 12a and 12b are connected as phase correction reactance elements 7a and 7b.
  • FIG. 6 is an equivalent circuit diagram in Embodiment 1 in which phase correction capacitors 13a and 13b are connected as phase correction reactance elements 7a and 7b.
  • FIG. 7 is a configuration diagram of a variable attenuator according to the second embodiment.
  • FIG. 8 is a configuration diagram of a modified example of the variable attenuator according to the second embodiment.
  • FIG. 9 is a configuration diagram of a variable attenuator according to the third embodiment.
  • FIG. 10 is a configuration diagram of a variable attenuator according to a fourth embodiment.
  • FIG. 11 is a configuration diagram of a modified example of the variable attenuator according to the fourth embodiment.
  • FIG. 12 is a configuration diagram of a variable attenuator according to the fifth embodiment.
  • FIG. 2 is a configuration diagram (circuit diagram) of the variable attenuator according to the first embodiment of the present invention.
  • 1 is an input terminal for a high-frequency signal
  • 2 is an output terminal for a high-frequency signal
  • 3a is a transistor for the first switch
  • 3b is a transistor for the second switch
  • 3c is a third switch.
  • Switches 4a and 4b are control terminals for controlling the on / off of switch transistors 3a, 3b and 3c for switching the passing amplitude
  • 5a is a series resistor (the first resistor).
  • 6a is the first parallel resistance (second resistance)
  • 6b is the second parallel resistance (third resistance)
  • 7a and 7b are the phase correction reactance elements
  • 8a is the second parallel resistance.
  • 9a is a second switch transistor 3b, a first parallel resistor 6a and a phase correction reactance element
  • a first parallel circuit section consisting of 7a, 9b is a third switch transistor 3c, a second parallel resistor 6b and a phase This is a second parallel circuit section including the reactance element 7b for correction.
  • variable attenuator turns on / off the switching transistors 3a, 3b, 3c by the control signals applied from the control terminals 4a and 4b.
  • the amplitude of the high-frequency signal input from input terminal 1 is varied and output from output terminal 2.
  • FIG. 3 is an equivalent circuit diagram of a reference state of the variable attenuator in which the switch transistor 3a is in an on state and the switch transistors 3b and 3c are in an off state.
  • FIG. 4 is an equivalent circuit diagram of an attenuated state of the variable attenuator in which the switch transistor 3a is off and the switch transistors 3b and 3c are on. .
  • 10 a is the on-state resistance of the on-state switch transistor 3 a
  • lib and 11 c are the off-state switch transistors, respectively.
  • the phase correction reactor If there are no capacitance elements 7a and 7b, the circuit shown in Fig. 4 can be regarded as a ⁇ -type attenuator consisting of a series resistor 5a and parallel resistors 6a and 6b. In this case, the high-frequency signal input from input terminal 1 is attenuated by the amount of attenuation set by series resistance 5a and parallel resistance 6a and 6b constituting the ⁇ -type attenuator. Output.
  • FIG. 5 is an equivalent circuit diagram in which phase correction inductors 12a and 12b are connected as phase correction reactance elements 7a and 7b.
  • FIG. 6 is an equivalent circuit diagram in which phase correction capacitors 13a and 13b are connected as phase correction reactance elements 7a and 7b.
  • phase correction reactance elements 7a and 7b are used as phase correction inductors 12a and 12b. If b is delayed, the passing phase difference can be corrected by connecting phase correction capacitors 13a and 13b as shown in FIG.
  • the switching transistors 3a, 3b, and 3c are turned on / off by the control signals applied from the control terminals 4a and 4b.
  • the amplitude of the high-frequency signal input from input terminal 1 can be varied, and the phase difference of the high-frequency signal transmitted from input terminal 1 to output terminal 2 can be corrected. It is possible to reduce the passing phase fluctuation that occurs when switching the passing amplitude of the input high-frequency signal.
  • the reactance elements 7a and 7b for phase correction are connected to both the first parallel circuit section 9a and the second parallel circuit section 9b, but are connected to at least one of them. This allows the correction of the passing phase difference.
  • the phase correction reactance elements 7a and 7b are connected between the parallel resistors 6a and 6b and the ground, but the switch transistors 3b and 3c and the parallel resistors 6a and 6b are connected. It may be connected between 6b.
  • FIG. 7 is a configuration diagram (circuit diagram) of a variable attenuator according to Embodiment 2 of the present invention.
  • the series circuit section 8a is composed of a switch transistor 3a, a series resistor 5a, and phase correction reactance elements 7a and 7b.
  • the first parallel circuit section 9a is composed of a switch transistor 3b and a parallel resistor 6a
  • the second parallel circuit section 9b is composed of a switch transistor 3c and a parallel resistor 6b. Consists of
  • the operation is basically the same as that of the first embodiment.
  • the difference is that the elements 7a and 7b are connected in series to the series resistor 5a constituting the series circuit section 8a.
  • the phase correction capacitor is used as the phase correction reactance element, and when the phase is delayed, the phase correction inductor is used.
  • phase correction reactance elements 7a and 7b are connected to both ends of the series resistor 5a, but it is sufficient that they are connected to at least one of them.
  • FIG. 8 is a configuration diagram (circuit diagram) of a modified example of the variable attenuator according to the second embodiment.
  • phase correction reactance elements 7a and 7b As shown in FIG. 8, the same effect can be obtained by connecting the phase correction reactance elements 7a and 7b to the switch transistor 3a.
  • the phase correction reactance elements 7a and 7b are connected to both ends of the switch transistor 3a, but it is sufficient if they are connected to at least one of them.
  • phase-correcting reactance elements 7a and 7b are connected to at least one of both ends of the series resistor 5a, and in Fig. 8, the switch transistor 3a is connected.
  • FIG. 9 is a configuration diagram (circuit diagram) of a variable attenuator according to Embodiment 3 of the present invention.
  • 8a is a first series circuit section
  • 8b is a second series circuit section.
  • the first series circuit section 8a is composed of a first switch transistor 3a and a series resistor 5a
  • the second series circuit section 8b is a fourth switch transistor 3d.
  • a series resistor 5b fourth resistor
  • the first parallel circuit section 9a includes a second switch transistor 3b, a first parallel resistor 6a, and a phase correction reactance element 7a.
  • T-type variable attenuator has two series circuit sections 8a and 8b and one parallel circuit section 9a.
  • the reactance element 7a for phase correction is connected between the parallel resistor 6a and the ground here, it is connected between the transistor 3b for switch and the parallel resistor 6a. Is also good. Embodiment 4.
  • FIG. 10 is a configuration diagram (circuit diagram) of a variable attenuator according to Embodiment 4 of the present invention.
  • the first series circuit section 8a is composed of a switch transistor 3a, a series resistor 5a, and reactance elements 7a and 7b for phase correction.
  • the section 8b includes a switch transistor 3d, a series resistor 5b, and phase correction reactance elements 7c and 7d.
  • the first parallel circuit section 9a is composed of a switch transistor 3b and a parallel resistor 6a.
  • phase correction reactance elements 7a, 7b, 7c, and 7d are connected to the series resistors constituting the series circuit sections 8a and 8b. The difference is that they are connected in series to 5a and 5b, respectively.
  • the phase correction reactance elements 7a and 7b are connected to both ends of the series resistor 5a
  • the phase correction reactance elements 7c and 7d are connected to both ends of the series resistor 5b. It is sufficient that at least one of these four phase correction reactance elements 7a, 7b, 7c, 7d is connected.
  • FIG. 11 shows a modification of the variable attenuator according to the fourth embodiment. It is a block diagram (circuit diagram).
  • phase correction reactance elements 7a and 7b are connected to both ends of the switch transistor 3a
  • phase correction reactance elements 7c and 7d are connected to both ends of the switch transistor 3d.
  • at least one of these four phase correction reactance elements 7a, 7b, 7c, 7d should be connected.
  • phase correction reactance elements 7a and 7b are provided at both ends of the series resistor 5a, and the phase correction reactance elements 7c and 7d are provided at both ends of the series resistor 5b.
  • phase correction reactance elements 7a and 7b are provided at both ends of the switch transistor 3a, and phase correction resistors are provided at both ends of the switch transistor 3d.
  • FIG. 12 is a block diagram of a variable attenuator according to Embodiment 5 of the present invention. Road map).
  • 14 a, 14 b, 14 c, and 14 d are resistors for determining the direct-flow cutting point.
  • the series circuit section 8a is composed of a switch transistor 3a, a series resistor 5a, and the like.
  • the first parallel circuit section 9a is composed of a switch transistor 3b, a parallel resistor 6a, and DC operating point determining resistors 14a and 14b.
  • the switch constituting the parallel circuit section comprises the switch transistor 3c, the parallel resistor 6b, and the DC operating point determining resistors 14c and 14d.
  • connection between the switching transistors 3 b and 3 c and the parallel resistors 6 a and 6 b is performed when the switching transistors 3 b and 3 c exhibit an off-capacitance when the switching transistors 3 b and 3 c are off, and the phase correction reactance element 7 a If, 7b is a capacitance, the DC operating point is not determined and becomes DC unstable, which may cause problems in actual use.
  • the DC operating point determining resistors 14a, 14c are connected to the switching transistors 3b, 3c, and the DC operating point determining resistors 14b, 14d are connected to the complementary reactance.
  • the resistors are connected in parallel to the elements 7a and 7b, respectively.
  • FIG. 12 shows a case where the present invention is applied to the first embodiment
  • a similar effect can be obtained by applying the second embodiment to the fourth embodiment.
  • the DC operating point determining resistor is used in Embodiment 2 and Embodiment 2 shown in FIG.
  • the first 10 In the fourth embodiment shown in the figure it may be connected to the switching transistors 3 a and 3.
  • the reactance element for phase correction is an inductor
  • the resistance for determining a DC operating point is also the same as that in the first embodiment shown in FIG.
  • the third embodiment shown in FIG. 9 it suffices to connect b and 3c to the switch transistor 3b.
  • variable attenuator according to the present invention is suitable for reducing the passing phase fluctuation at the time of passing amplitude switching.

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  • Networks Using Active Elements (AREA)
  • Attenuators (AREA)
  • Filters And Equalizers (AREA)

Abstract

L'invention concerne un atténuateur variable équipé d'une unité à circuit en série comprenant un premier transistor de commutation et une première résistance connectés en parallèle, une première unité à circuit en parallèle comprenant un deuxième transistor de commutation et une deuxième résistance connectés en série, et une seconde unité à circuit en parallèle comprenant un troisième transistor de commutation et une troisième résistance connectés en série. Au moins une des deux unités à circuit en parallèle comprend un élément à réactance de correction de phase qui corrige la différence de phase passante des signaux haute fréquence transmis d'une borne d'entrée à une borne de sortie.
PCT/JP2002/007558 2002-04-15 2002-07-25 Attenuateur variable WO2003088477A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002111732A JP4214710B2 (ja) 2002-04-15 2002-04-15 可変減衰器
JP2002-111732 2002-04-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2337219A1 (fr) * 2009-12-14 2011-06-22 Korea Advanced Institute of Science and Technology Atténuateur numérique à faible variation de phase

Families Citing this family (10)

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Publication number Priority date Publication date Assignee Title
JP4439905B2 (ja) * 2003-12-25 2010-03-24 パナソニック株式会社 可変アッテネータ回路
JP2011223390A (ja) * 2010-04-12 2011-11-04 Japan Radio Co Ltd 減衰器
JP2012129721A (ja) * 2010-12-14 2012-07-05 Mitsubishi Electric Corp 可変減衰器
JP5640725B2 (ja) * 2010-12-20 2014-12-17 三菱電機株式会社 電力増幅器
US9985601B2 (en) * 2012-06-01 2018-05-29 Qualcomm Incorporated Step attenuator with constant input capacitance
JP6504737B2 (ja) * 2013-03-14 2019-04-24 日本無線株式会社 減衰器に用いられる可変インピーダンス回路
JP6425612B2 (ja) * 2015-04-21 2018-11-21 三菱電機株式会社 可変減衰器
US20180062621A1 (en) * 2016-08-30 2018-03-01 Skyworks Solutions, Inc. Attenuators having phase shift and gain compensation circuits
US20180062622A1 (en) * 2016-08-30 2018-03-01 Skyworks Solutions, Inc. Binary-weighted attenuator having compensation circuit
EP3758225B1 (fr) 2018-03-29 2023-05-03 Mitsubishi Electric Corporation Circuit de commutation et atténuateur variable

Citations (7)

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Publication number Priority date Publication date Assignee Title
JPS5410647A (en) * 1977-06-27 1979-01-26 Hitachi Ltd Variable attenuator circuit using pin diode
JPH0262102A (ja) * 1988-08-26 1990-03-02 Sharp Corp ショートスタブ整合器
JPH0288321U (fr) * 1988-12-27 1990-07-12
JPH0461925U (fr) * 1990-10-09 1992-05-27
JPH06177693A (ja) * 1992-12-09 1994-06-24 Mitsubishi Electric Corp 減衰回路
JPH10173464A (ja) * 1996-12-12 1998-06-26 Nec Corp ステップアッテネータ
JPH11340771A (ja) * 1998-05-27 1999-12-10 Nec Eng Ltd アッテネータ及びステップアッテネータ

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5410647A (en) * 1977-06-27 1979-01-26 Hitachi Ltd Variable attenuator circuit using pin diode
JPH0262102A (ja) * 1988-08-26 1990-03-02 Sharp Corp ショートスタブ整合器
JPH0288321U (fr) * 1988-12-27 1990-07-12
JPH0461925U (fr) * 1990-10-09 1992-05-27
JPH06177693A (ja) * 1992-12-09 1994-06-24 Mitsubishi Electric Corp 減衰回路
JPH10173464A (ja) * 1996-12-12 1998-06-26 Nec Corp ステップアッテネータ
JPH11340771A (ja) * 1998-05-27 1999-12-10 Nec Eng Ltd アッテネータ及びステップアッテネータ

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Title
KENSUKE NAKAJIMA ET AL.: "Ku tai 6 bit MMIC kahen genseuiki", 1999 NEN THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS ELECTRONICS SOCIETY TAIKAI KOEN RONBUNSHU 1, 16 August 1999 (1999-08-16), (LECTURE NO.C-2-24), pages 53, XP002969420 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2337219A1 (fr) * 2009-12-14 2011-06-22 Korea Advanced Institute of Science and Technology Atténuateur numérique à faible variation de phase

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JP4214710B2 (ja) 2009-01-28
JP2003309454A (ja) 2003-10-31

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