WO2003087719A1 - Capteur d'inclinaison, procede de fabrication de ce capteur d'inclinaison et procede permettant de mesurer l'inclinaison - Google Patents

Capteur d'inclinaison, procede de fabrication de ce capteur d'inclinaison et procede permettant de mesurer l'inclinaison Download PDF

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Publication number
WO2003087719A1
WO2003087719A1 PCT/JP2003/004235 JP0304235W WO03087719A1 WO 2003087719 A1 WO2003087719 A1 WO 2003087719A1 JP 0304235 W JP0304235 W JP 0304235W WO 03087719 A1 WO03087719 A1 WO 03087719A1
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WO
WIPO (PCT)
Prior art keywords
tilt angle
piezoresistor
angle sensor
inclination angle
wafer
Prior art date
Application number
PCT/JP2003/004235
Other languages
English (en)
Japanese (ja)
Inventor
Koichi Hikida
Masaya Yamashita
Yuuichi Kanayama
Hirofumi Fukumoto
Original Assignee
Asahi Kasei Emd Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Emd Corporation filed Critical Asahi Kasei Emd Corporation
Priority to AU2003236348A priority Critical patent/AU2003236348A1/en
Priority to EP03746166A priority patent/EP1491854A4/fr
Priority to JP2003584621A priority patent/JPWO2003087719A1/ja
Priority to US10/509,873 priority patent/US20050151448A1/en
Publication of WO2003087719A1 publication Critical patent/WO2003087719A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C9/00—Measuring inclination, e.g. by clinometers, by levels
    • G01C9/02—Details
    • G01C9/06—Electric or photoelectric indication or reading means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C9/00—Measuring inclination, e.g. by clinometers, by levels
    • G01C9/12—Measuring inclination, e.g. by clinometers, by levels by using a single pendulum plumb lines G01C15/10
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C9/00—Measuring inclination, e.g. by clinometers, by levels
    • G01C9/02—Details
    • G01C9/06—Electric or photoelectric indication or reading means
    • G01C2009/068—Electric or photoelectric indication or reading means resistive
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass

Definitions

  • the present invention relates to a tilt angle sensor and a method of manufacturing the same, and more particularly, to a tilt angle capable of measuring a tilt angle using a piezoresistive effect without selectively etching a substrate on which a piezoresistor is formed.
  • the present invention relates to a sensor, a method of manufacturing a tilt angle sensor, and a method of measuring a tilt angle.
  • FIG. 76 (a) is a perspective view showing a schematic configuration of a conventional tilt angle sensor
  • FIG. 76 (b) is a cross-sectional view showing a schematic configuration of a conventional tilt angle sensor
  • FIG. 76 (c) is a conventional tilt angle sensor. It is sectional drawing which expands and shows the part of the piezo resistance of an angle sensor.
  • a piezoresistor R is formed on a silicon substrate 201, and in a region where the piezoresistor R is disposed, the silicon substrate 201 is formed by etching from the back surface so that the piezoresistor R is easily stressed. Displaced part 201c is provided.
  • a support portion 201a for supporting the displacement portion 201c is formed around the silicon substrate 201, and a support portion for deforming the displacement portion 201c is formed in the center of the silicon substrate 201.
  • a weight portion 201b is formed.
  • the support portion 201a, the weight portion 201b, and the displacement portion 201c are formed by selectively etching the silicon substrate 201 having a thickness of about 500 ⁇ from the back surface. It is configured such that the portion between 1a and the weight portion 201b is bridged by the displacement portion 201c.
  • the displacement portion 2Olc is deformed as shown in FIG. 76 (c), and stress is applied to the piezoresistance R.
  • the silicon substrate 2 When 01 tilts, the direction of gravity applied to the weight 201b changes, and the stress applied to the piezoresistor R also changes, so that the resistance value of the piezoresistor changes.
  • the inclination of the tilt angle sensor can be obtained by detecting the change in the resistance value of the piezo resistor R.
  • Fig. 77 (a) shows the increase / decrease of each piezo resistance during acceleration of the conventional tilt angle sensor in the X and Y directions.
  • Fig. 77 (b) shows the acceleration of the conventional tilt angle sensor in the Z direction. It is a figure which shows the increase / decrease of each piezo resistance at the time.
  • a tilt angle sensor there is a method in which a movable portion having four corners suspended by silicon springs, a capacitor is formed between the movable portion and a fixed portion, and a change in capacitance due to movement of the movable portion is measured.
  • the back surface of the silicon substrate is selectively etched to form the support portion 201a, the weight portion 201b, and the displacement portion 201c, which complicates the configuration of the tilt angle sensor.
  • the tilt angle sensor is vulnerable to impact. I got it.
  • the spring and the capacitor must be formed by fine processing of about 1 to 2 ⁇ , which increases the cost and reduces the impact.
  • the present invention has been made by focusing on the unresolved problems of the conventional technology, and the present invention does not selectively etch the substrate on which the piezoresistor is formed, and achieves the piezoresistive effect. It is a first object of the present invention to provide a tilt angle sensor capable of measuring a tilt angle by utilizing a method, a method of manufacturing a tilt angle sensor, and a method of measuring a tilt angle. Also, ffitt describes a tilt angle sensor capable of forming a weight member without selectively etching the back surface of a substrate on which a piezoresistor is formed, and a method of manufacturing a tilt angle sensor and a method of measuring a tilt angle. Is the second purpose. Disclosure of the invention
  • the tilt angle sensor according to claim 1 includes a substrate having a piezoresistive formed on a front surface and a uniform back surface that is uniformly ground to a thickness capable of being radiused. And a support member for supporting the substrate at at least one end of the substrate.
  • the configuration and manufacturing process of the tilt angle sensor can be simplified, the cost of the tilt angle sensor can be reduced, and the resistance to impact can be improved.
  • the tilt angle sensor according to claim 2 is the tilt angle sensor according to claim 1, further comprising a weight member disposed in a displaceable area of the piezoresistance forming surface. .
  • the weight member can be provided on the substrate on which the piezoresistor is formed without selectively etching the substrate on which the piezoresistor is formed, while suppressing the complexity of the manufacturing process of the tilt angle sensor.
  • the detection sensitivity of the tilt angle sensor can be improved You.
  • the tilt angle sensor according to claim 3 according to the present invention is the tilt angle sensor according to any one of claims 1 and 2, wherein the piezoresistor is provided on the surface of the substrate. They are arranged dimensionally.
  • the tilt angle sensor according to claim 4 of the present invention is the tilt angle sensor according to claim 3, wherein the piezoresistor detects a radius of the substrate.
  • the tilt angle sensor according to claim 5 may further include a hexahedral strip-shaped elastic body having a free surface that can be displaced, and a longitudinal direction on the same plane of the hexahedral strip-shaped elastic body. At least two locations, at least one of which is a piezoresistor disposed on the free surface; a support member for supporting both ends of the hexahedral strip-shaped elastic body in a longitudinal direction; and the hexahedral strip.
  • a weight member provided substantially at the center in the longitudinal direction of the displaceable region of the elastic body.
  • the tilt angle sensor according to claim 6 of the present invention may further comprise: a hexahedral strip-shaped elastic body having a free surface that can be displaced; and a longitudinal direction on the same surface of the hexahedral strip-shaped elastic body. At least two places, at least one of which is located on the free surface.
  • a tilt angle sensor by retrofitting a support member and a weight member to a hexahedral strip-shaped elastic body, and to increase the distance between the support member and the weight member to improve detection sensitivity.
  • the structure and manufacturing process of the tilt angle sensor can be simplified, and the cost of the tilt angle sensor can be reduced.
  • the characteristics of the tilt angle sensor can be improved and the tilt angle sensor can be downsized. Can be achieved.
  • the tilt angle sensor according to claim 7 according to the present invention is the tilt angle sensor according to any one of claims 5 and 6, wherein at least one of the support member and the weight member is At least one of the length and the width is the same as the hexahedral strip-shaped elastic body.
  • the tilt angle sensor according to claim 8 according to the present invention is the tilt angle sensor according to any one of claims 5 to 7, wherein the hexahedral strip-shaped elastic body is a silicon substrate. Wherein the piezoresistor is an impurity diffusion layer formed on the silicon substrate.
  • a plurality of piezoresistors can be collectively formed on a silicon substrate simply by selectively performing ion implantation, thereby simplifying the manufacturing process of the tilt angle sensor and reducing the cost of the tilt angle sensor. Becomes possible.
  • the tilt angle sensor according to claim 9 is the tilt angle sensor according to claim 8, wherein the hexahedral strip-shaped elastic body is a silicon substrate,
  • the support member has a recess formed therein, a glass substrate made of a material that can be anode-bonded to the silicon substrate, and an anode embedded in the recess, the anode being connected to the silicon substrate.
  • the silicon substrate and the supporting member can be firmly joined only by applying a voltage between the silicon substrate and the supporting member, and even when used in a severe environment, the supporting member falls off the silicon substrate.
  • the support member and the silicon substrate can be joined without using an adhesive.
  • the tilt angle sensor can be easily manufactured.
  • the surface of the support member can be flattened and a cavity can be prevented from being formed on the back surface of the silicon substrate, a load is applied on the silicon substrate or an impact is applied to the silicon substrate. Even if it is added, the entire back surface of the silicon substrate can be supported by the support member.
  • the silicon substrate and the support member can be partially joined only by applying a ⁇ ⁇ ⁇ between the silicon substrate and the silicon substrate. And the support member can be separated at the position of the embedding member.
  • the tilt angle sensor according to claim 10 of the present invention is the tilt angle sensor according to any one of claims 5 to 9, wherein the hexahedral strip-shaped elastic body is in the same plane.
  • a piezoresistor arranged to detect the amount of radius of the hexahedral strip-shaped elastic body, and a piezoresistance arranged to detect the amount of twist and twist of the hexahedral strip-shaped elastic body. .
  • a method for manufacturing a tilt angle sensor according to claim 11 of the present invention includes the steps of: forming two or more piezoresistors on a wafer surface; A step of uniformly grinding the entire back surface of the wafer; and a step of bonding the support substrate having the recessed portion to the back surface of the wafer so that the piezoresistor formation region is located inside the recess near the edge of the recess. Cutting the wafer and the support substrate into chips so that the displaceable region of the piezoresistive surface is supported on both sides of the recess.
  • a supporting portion for supporting the piezoresistor without selectively etching the substrate on which the piezoresistor is formed.
  • a support portion for supporting the piezoresistor can be collectively formed for a plurality of chips, thereby simplifying the manufacturing process of the tilt angle sensor and reducing the cost of the tilt angle sensor. .
  • the method for manufacturing an inclination angle sensor according to claim 12 is the method for manufacturing an inclination angle sensor according to claim 11, wherein the weight substrate on which the convex portion is formed includes: Further comprising a step of bonding the convex portion to the surface of the wafer such that the convex portion is disposed substantially at the center of the displaceable region of the piezoresistor forming surface, wherein the weight substrate, the wafer and the support substrate are formed in a chip shape. It is cut at once.
  • the method includes a step of cutting the wafer on which the pedestal is placed and the supporting substrate in a chip at a time, and a step of arranging a weight member on the pedestal.
  • a support portion for supporting the piezoresistor without selectively etching the substrate on which the piezoresistor is formed.
  • a support portion for supporting the piezoresistor can be formed collectively for multiple chips, simplifying the manufacturing process of the tilt angle sensor and reducing the cost of the tilt angle sensor.
  • the detection sensitivity can be improved by enlarging the weight member, and the arrangement position of the weight member can be adjusted for each chip.
  • a step of forming two or more piezoresistors on the wafer surface, and uniformly grinding the entire back surface of the wafer The supporting substrate having the recess formed therein such that one position of the recess is inside the recess near an edge of the piezoresistor forming region, and the other of the recess is over a scribe line of the wafer. Bonding the piezoresistive surface to the back surface of the wafer, arranging the pedestal in a displaceable area of the piezoresistive surface, and positioning the pedestal such that the piezoresistive surface is supported on one side of the recess. A step of cutting the wafer and the support substrate into chips at once, and a step of disposing a weight member on the pedestal.
  • support portion for supporting the piezoresistor without selectively etching the substrate on which the piezoresistor is formed.
  • Supports for supporting the piezoresistor can be formed collectively for multiple chips, simplifying the manufacturing process of the tilt angle sensor and reducing the cost of the tilt angle sensor.
  • the distance between the support substrate and the weight member can be increased to improve the detection sensitivity.
  • the protrusions are at 2 chip intervals Bonding a portion of the concave portion of the weight substrate in parallel with the scribe line, so that one end of the piezoresistor forming surface is on one side of the concave portion of the support substrate.
  • the method for manufacturing an inclination angle sensor according to claim 16 according to the present invention is the method for manufacturing an inclination angle sensor according to any one of claims 11 to 15,
  • the grinding is polishing or etching, or a combination thereof.
  • the tilt angle sensor according to claim 17 of the present invention comprises: a radial plate having a piezoresistor formed on a surface thereof; A support member for supporting the flexible plate, and a metal weight member disposed in a displaceable region of the radius plate are provided.
  • the configuration and the manufacturing process of the tilt angle sensor can be simplified, the size and cost of the tilt angle sensor can be reduced, and the resistance to impact can be improved.
  • the tilt angle sensor according to claim 18 of the present invention may further include: An SOI substrate on which a silicon layer is formed, a gap region formed in an insulating layer below the silicon layer, a piezoresistor formed in the silicon layer above the gap region, and a layer on the silicon layer above the gap region And a metal weight member disposed at the same position.
  • the weight member can be provided without selectively etching the back surface of the substrate on which the piezoresistor is formed, and the silicon layer on which the piezoresistor is formed so that stress is applied to the piezoresistor.
  • the silicon layer is supported, it is not necessary to attach the silicon layer to the support member after the silicon layer is thinned. For this reason, it is not necessary to increase the thickness of the silicon layer in order to secure the strength for bonding to the support member, so that the silicon layer is efficiently bent and stress is applied to the piezo resistance efficiently.
  • the configuration of the oblique angle sensor can be simplified, and the resistance to impact can be easily improved.
  • the specific gravity of the weight member disposed on the silicon layer can be increased, the size of the weight member can be reduced, and the tilt angle sensor can be downsized.
  • the tilt angle sensor according to claim 19 according to the present invention is the tilt angle sensor according to any one of claims 17 and 18, wherein the flexible plate or the silicon The layer is constricted over the area where the piezoresistor is formed.
  • the radial plate can be efficiently bent, and the detection accuracy of the tilt angle sensor can be easily improved while reducing the size and cost of the tilt angle sensor. It can be improved.
  • a method for manufacturing a tilt angle sensor according to claim 20 of the present invention comprises a step of forming two or more piezoresistors in each chip region on the wafer surface. Forming a pad in each chip region on the wafer surface; uniformly grinding the entire back surface of the wafer on which the piezoresistor and the pad are formed; and supporting the support substrate having the concave portion formed thereon. Bonding the piezoresistor to the rear surface of the wafer so that the piezoresistor forming region is located near the edge of the recess and the pad is located inside the recess; and each pad of the wafer bonded to the support substrate. A step of forming a metal weight member thereon; Forming an opening in the wafer, and cutting the wafer in which the opening is formed into chips.
  • a support portion for supporting the piezoresistor without selectively etching the back surface of the wafer on which the piezoresistor is formed, and to bond the wafer and the support substrate. With only one operation, a support portion for supporting the piezoresistor can be formed collectively for a plurality of chips.
  • the piezoresistor is provided at two or more locations in each chip region on the silicon layer formed on the silicon wafer via the silicon oxide film.
  • a weight member having a large specific gravity can be formed on the wafer without selectively etching the back surface of the wafer on which the piezoresistance is formed, and the weight member can be easily formed while reducing the size of the weight member. Can be formed. Therefore, the manufacturing process of the tilt angle sensor can be simplified, the size and cost of the tilt angle sensor can be reduced, and the detection accuracy of the tilt angle sensor can be easily improved.
  • a method of manufacturing an inclination angle sensor according to claim 22 according to the present invention is the method of manufacturing an inclination angle sensor according to any one of claims 20 and 21.
  • the formation of the metal weight member is an electrolytic plating.
  • the weight member can be hardly peeled off from the wafer, and the resistance to impact can be improved.
  • a weight member having a large specific gravity can be collectively formed on a plurality of chips, so that the manufacturing process of the tilt angle sensor can be simplified and the cost can be reduced.
  • the tilt angle sensor according to claim 23 of the present invention comprises: a radial plate having a piezoresistor formed on a surface thereof;
  • a tilt angle sensor comprising: a support member that supports a flexible plate; and a weight member that is disposed in a displaceable region of the radius plate.
  • a first piezoresistor group including two pairs of piezoresistors arranged at positions symmetrical with respect to a centerline passing through the midpoint of the width of the plate as an axis, and the centerline of the displaceable area of the radius plate.
  • a second piezoresistor group including two pairs of piezoresistors arranged at positions different from the first piezoresistor group at a line-symmetric position as an axis, and 1 While configuring a full bridge circuit, the second piezoresistor group A second full-bridge circuit, and further calculating a first inclination angle based on an output of the first full-bridge circuit and calculating an inclination angle about the longitudinal direction of the radial plate as a rotation axis.
  • the first tilt angle calculating means can calculate the tilt angle having the longitudinal direction as the rotation axis based on the output of the first full bridge circuit.
  • the second inclination angle calculation means calculates the inclination angle with the short direction as the rotation axis. Can be.
  • the tilt angle sensor according to claim 24 of the present invention further comprising: a flexure plate having a piezoresistance formed on a surface thereof; and a support member that supports the flexure plate at one end of the radius plate.
  • a weight member disposed in a displaceable region of the flexible plate, wherein the piezoresistor is a center line passing through a midpoint of the width of the flexible plate in the movable region of the flexible plate.
  • a first piezoresistor group including two pairs of piezoresistors arranged at symmetrical positions with respect to the axis, and a second piezoresistor including a plurality of piezoresistors arranged on the center line in the displaceable region of the flexible plate.
  • a first full-bridge circuit is configured by the first piezoresistor group, and a first full-bridge circuit is configured by the second piezoresistor group.
  • (2) forming a half-bridge circuit further comprising: a first inclination angle calculation means for calculating an inclination angle with the longitudinal direction of the flexible plate as a rotation axis based on an output of the first full bridge circuit; and A second inclination angle calculating means for calculating an inclination angle of which the rotation direction is the short side direction of the flexible plate based on the output of the half-bridge circuit and the inclination angle calculated by the first inclination angle calculating means.
  • the configuration and the manufacturing process of the tilt angle sensor can be simplified, the size and cost of the tilt angle sensor can be reduced, and the resistance to impact can be improved.
  • the first tilt angle calculating means can calculate the tilt angle having the longitudinal direction as the rotation axis based on the output of the first full bridge circuit.
  • the inclination angle sensor when the inclination angle sensor is tilted around the longitudinal direction or the lateral direction of the radial plate, the direction of gravity of the member changes and a bending moment is generated in the displaceable area, and the radial plate bends.
  • the resistance value of each piezo resistor changes, and the output of the second half-bridge circuit changes accordingly.
  • the output of the second half-bridge circuit changes according to the stress generated by the bending moment.
  • the stress caused by the bending moment is proportional to the product of the cosine value of the tilt angle with the longitudinal direction as the rotation axis and the cosine value of the tilt angle with the short direction as the rotation axis.
  • the second tilt angle calculating means shortens the length. It is possible to calculate a tilt angle with the hand direction as a rotation axis.
  • the tilt angle sensor according to claim 25, further comprising: a flexible plate having a piezoresistance formed on a surface thereof; and a support member for supporting the radial plate at one end of the radial plate. And a weight member disposed in a displaceable region of the radial plate, wherein the piezoresistor sets a midpoint of a width of the radial plate in a displaceable region of the flexible plate.
  • a first piezoresistor group including two pairs of piezoresistors arranged at positions symmetrical with respect to a passing center line as an axis, wherein the first piezoresistor group constitutes a first full-bridge circuit;
  • a second full-bridge circuit having a different connection from the first full-bridge circuit is constituted by a piezoresistor group, and a tilt having a longitudinal direction of the flexible plate as a rotation axis based on an output of the first full-bridge circuit.
  • First tilt angle calculating means for calculating the angle
  • a second inclination angle calculation for calculating an inclination angle with the short side direction of the radial plate as a rotation axis based on the output of the second full bridge circuit and the inclination angle calculated by the first inclination angle calculation means. Means.
  • the piezoresistor can be supported in a bendable and twistable state without selectively etching the back surface of the substrate on which the piezoresistor is formed. Even when the weight member is provided, the specific gravity of the weight member increases, so that it is possible to easily match the existing flip-chip mounting technology while suppressing an increase in the volume of the weight member.
  • the configuration and manufacturing process of the tilt angle sensor can be simplified, the size and cost of the tilt angle sensor can be reduced, and the resistance to impact can be improved.
  • the first tilt angle calculating means can calculate the tilt angle having the longitudinal direction as the rotation axis based on the output of the first full bridge circuit.
  • the tilt angle sensor when the tilt angle sensor is tilted around the longitudinal direction or the lateral direction of the flexible plate, the gravitational direction of the weight member changes, and a bending moment is generated in the displaceable region, so that the flexible plate bends.
  • the resistance value of each piezoresistor changes, and the output of the second full bridge circuit changes accordingly.
  • the output of the second bridge circuit changes according to the stress generated by the bending moment.
  • the stress generated by the bending moment is proportional to the product of the cosine value of the inclination angle with the longitudinal direction as the rotation axis and the cosine value of the inclination angle with the short direction as the rotation axis. Therefore, based on the output of the second full-bridge circuit and the calculated inclination angle with the longitudinal direction as the rotation axis, the second inclination angle calculation means calculates the inclination angle with the short direction as the rotation axis. Can be.
  • a tilt angle measuring method is characterized in that a bending plate having a piezoresistance formed on a surface thereof is provided at one end of the radius plate.
  • a first piezoresistor group including two pairs of piezoresistors arranged at positions symmetrical with respect to a center line passing through a point, and a position symmetrical with respect to the centerline as an axis in the displaceable region of the flexible plate; And a second piezoresistor group including two pairs of piezoresistors arranged at different positions from the first piezoresistor group to measure an inclination angle.
  • the first piezoresistor group forms the first full-bridge circuit and outputs A first bridge circuit output step, a second bridge circuit output step of forming and outputting a second full bridge circuit by the second piezoresistor group, and a step of outputting the first flexible bridge circuit based on the output of the first full bridge circuit.
  • a tilt angle measuring step based on an output of the second full bridge circuit and the tilt angle calculated in the first tilt angle calculating step.
  • a second inclination angle calculating step of calculating an inclination angle of the radius plate with the short side direction as a rotation axis.
  • the tilt angle measuring method according to claim 27 of the present invention further comprising: a flexure plate having a piezoresistance formed on a surface thereof; and a support member that supports the flexure plate at one end of the flexure plate.
  • the tilt angle measuring method according to claim 28 of the present invention may further comprise: a radial plate having a piezoresistance formed on a surface thereof; and a support for supporting the radial plate at one end of the flexible plate.
  • a first bridge circuit output step of configuring and outputting a full bridge circuit and (2) a second bridge circuit output step of configuring and outputting a second phenolic bridge circuit different in connection from the first full bridge circuit by the first piezo resistor group.
  • the first full bridge times A first inclination angle calculating step of calculating an inclination angle having a longitudinal direction of the radial plate as a rotation axis based on a road output, and an output of the second full bridge circuit and the first inclination angle calculating step.
  • the azimuth sensor according to claim 29 of the present invention is characterized in that the azimuth sensor according to claim 1 to claim 10, claim 17 to claim 19, or claim 2
  • a mobile phone according to claim 30 of the present invention includes the azimuth sensor according to claim 29.
  • FIG. 1 is a sectional view showing the operation of the tilt angle sensor according to one embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing a manufacturing process of the tilt angle sensor according to the first embodiment of the present invention.
  • FIG. 3 is a cross-sectional view showing a manufacturing process of the tilt angle sensor according to the first embodiment of the present invention.
  • FIG. 4A is a plan view showing the configuration of the glass wafer according to the first embodiment of the present invention
  • FIG. 4B is the configuration of the glass wafer according to the first embodiment of the present invention.
  • FIG. FIG. 5A is a cross-sectional view illustrating the configuration of a weight wafer according to the first embodiment of the present invention
  • FIG. 5B is a cross-sectional view of the weight wafer according to the first embodiment of the present invention.
  • FIG. 3 is a plan view showing a configuration.
  • FIG. 6 is a cross-sectional view illustrating a manufacturing process of the tilt angle sensor according to the first embodiment of the present invention.
  • FIG. 7 is a cross-sectional view illustrating a manufacturing process of the tilt angle sensor according to the second embodiment of the present invention.
  • FIG. 8 is a cross-sectional view illustrating a manufacturing process of the tilt angle sensor according to the third embodiment of the present invention.
  • FIG. 9 is a cross-sectional view showing a manufacturing process of the peripheral angle sensor according to the third embodiment of the present invention.
  • FIG. 10 (a) is a plan view showing a configuration of a glass wafer according to a third embodiment of the present invention
  • FIG. 10 (b) is a glass according to a third embodiment of the present invention. It is sectional drawing which shows the structure of a wafer.
  • FIG. 11 is a cross-sectional view showing a manufacturing process of the tilt angle sensor according to the third embodiment of the present invention.
  • FIG. 12 is a cross-sectional view illustrating a manufacturing process of the tilt angle sensor according to the third embodiment of the present invention.
  • FIG. 13 is a cross-sectional view illustrating a configuration of a tilt angle sensor according to the fourth embodiment of the present invention.
  • FIG. 14 is a cross-sectional view showing a manufacturing process of the tilt angle sensor according to the fifth embodiment of the present invention.
  • FIG. 1.5 is a cross-sectional view showing a manufacturing process of the tilt angle sensor according to the fifth embodiment of the present invention.
  • FIG. 16 (a) shows the results of the present invention.
  • FIG. 16B is a plan view showing the configuration of the glass wafer according to the fifth embodiment.
  • FIG. 16B is a cross-sectional view showing the configuration of the glass wafer according to the fifth embodiment of the present invention.
  • FIG. 17A is a cross-sectional view illustrating the configuration of a weight wafer according to the fifth embodiment of the present invention.
  • FIG. 17B is a cross-sectional view illustrating the configuration of the weight wafer according to the fifth embodiment of the present invention.
  • FIG. 18 is a cross-sectional view illustrating a manufacturing process of the tilt angle sensor according to the fifth embodiment of the present invention.
  • FIG. 19A is a perspective view showing a schematic configuration of an inclination angle sensor according to a sixth embodiment of the present invention, and FIG. 19B is an inclination angle according to the sixth embodiment of the present invention.
  • FIG. 3 is a plan view illustrating a configuration of a silicon substrate surface of the sensor.
  • FIG. 20 is a perspective view showing the operation of the inclination angle sensor according to the sixth embodiment of the present invention.
  • FIG. 21 is a circuit diagram showing a connection configuration of the piezoresistors R11 and R12 in FIG. 19 (b).
  • FIG. 22 (a) is a perspective view showing the operation of the tilt angle sensor according to the sixth embodiment of the present invention, and FIGS. 22 (b) and 22 (c) show the operation of the sixth embodiment of the present invention.
  • FIG. 5 is a cross-sectional view showing the operation of the tilt angle sensor according to the first embodiment.
  • FIG. 23 is a circuit diagram showing a connection configuration of the piezo resistors R23 to R26 in FIG. 19B.
  • FIG. 24A is a cross-sectional view illustrating a schematic configuration of a tilt angle sensor according to a seventh embodiment of the present invention.
  • FIG. 24B is a cross-sectional view illustrating a tilt angle according to a seventh embodiment of the present invention.
  • FIG. 3 is a plan view showing a configuration of a silicon substrate surface of the sensor.
  • FIG. 25 is a circuit diagram showing a connection configuration of the piezo resistors R21, R22, R27, and R28 of FIG. 24 (b).
  • FIG. 26 is a circuit diagram showing a connection configuration of the piezo resistors R23 to R26 in FIG. 24 (b).
  • FIG. 27 (a) is a plan view showing a configuration of an inclination angle sensor according to an eighth embodiment of the present invention, and FIG. 27 (b) is a cross section taken along line A1-A1 of FIG. 27 (a).
  • FIGS. 28 (a) and (b) are cross-sectional views showing the operation of the tilt angle sensor according to the eighth embodiment of the present invention, and FIG. 28 (c) is the piezoresistor R1,
  • FIG. FIG. 4 is a circuit diagram showing a connection configuration of R2.
  • FIG. 29 (a) is a plan view showing a manufacturing process of the tilt angle sensor according to the eighth embodiment of the present invention, and FIG. 29 (b) is cut along the line A2-A2 in FIG. 29 (a).
  • FIG. FIG. 30 (a) is a plan view showing a manufacturing process of the tilt angle sensor according to the eighth embodiment of the present invention, and FIG. 30 (b) is a view taken along line A3-A3 in FIG. 30 (a). It is sectional drawing which cut
  • FIG. 31 (a) shows the manufacture of the tilt angle sensor according to the eighth embodiment of the present invention.
  • FIGS. 31 (b) and (c) are cross-sectional views taken along line A4-A4 in FIG. 31 (a).
  • FIG. 32 (a) is a plan view showing a manufacturing process of the tilt angle sensor according to the eighth embodiment of the present invention, and FIG. 32 (b) is cut along line A5-A5 in FIG. 32 (a).
  • FIG. FIG. 33 (a) is a plan view showing a manufacturing process of the tilt angle sensor according to the eighth embodiment of the present invention, and FIG. 33 (b) is a view taken along a line A6--A6 in FIG. It is sectional drawing which cut
  • FIG. 34 (a) is a plan view showing a manufacturing process of the tilt angle sensor according to the eighth embodiment of the present invention, and FIG. 34 (b) is a view taken along line A7-A7 in FIG. It is sectional drawing which cut
  • FIG. 35 (a) is a plan view showing a manufacturing process of the tilt angle sensor according to the eighth embodiment of the present invention
  • FIG. 35 (b) is a section taken along line A8-A8 in FIG. 35 (a).
  • FIG. FIG. 36 is a cross-sectional view showing a manufacturing process of the tilt angle sensor according to the eighth embodiment of the present invention.
  • FIG. 37 is a cross-sectional view showing an example of the manufacturing process of the solder bump of the inclination angle sensor according to one embodiment of the present invention.
  • FIG. 38 is a cross-sectional view showing an example of the manufacturing process of the solder bump of the inclination angle sensor according to one embodiment of the present invention.
  • FIG. 39 is a cross-sectional view showing an example of the manufacturing process of the solder bump of the inclination angle sensor according to one embodiment of the present invention.
  • FIG. 40 (a) is a plan view showing a configuration of an inclination angle sensor according to a ninth embodiment of the present invention, and FIG. 40 (b) is a section taken along line Bl-B1 in FIG. 40 (a). It is sectional drawing.
  • FIG. 41 (a) is a plan view showing a manufacturing process of the tilt angle sensor according to the ninth embodiment of the present invention, and FIG. 41 (b) is cut along a line B2-B2 in FIG. 41 (a). It is sectional drawing.
  • FIG. 42 (a) is a plan view showing a manufacturing process of the tilt angle sensor according to the ninth embodiment of the present invention, and FIG. 42 (b) is cut along line B 3 _B 3 in FIG. 42 (a).
  • FIG. 40 (a) is a plan view showing a configuration of an inclination angle sensor according to a
  • FIG. 43 (a) is a plan view showing a manufacturing process of the tilt angle sensor according to the ninth embodiment of the present invention, and FIG. 43 (b) is cut along line B4-B4 in FIG. 43 (a).
  • FIG. FIG. 44 (a) is a plan view showing a manufacturing process of the tilt angle sensor according to the ninth embodiment of the present invention, and FIG. 44 (b) is a line B5-B5 in FIG. 44 (a).
  • FIG. FIG. 45 (a) is a plan view illustrating a manufacturing process of the tilt angle sensor according to the ninth embodiment of the present invention, and FIG. 45 (b) is cut along a line B 6 _B 6 in FIG. 45 (a). did It is sectional drawing.
  • FIG. 46 (a) is a plan view showing a manufacturing process of the tilt angle sensor according to the ninth embodiment of the present invention
  • FIG. 46 (b) is a view taken along a line B7—B7 in FIG. It is sectional drawing which cut
  • FIG. 47 (a) is a plan view showing a manufacturing process of the tilt angle sensor according to the ninth embodiment of the present invention
  • FIG. 47 (b) is a view showing B8—B8 of FIG. 47 (a). It is sectional drawing cut
  • FIG. 48 is a cross-sectional view showing a manufacturing process of the oblique angle sensor according to the ninth embodiment of the present invention.
  • FIG. 49 (a) is a plan view showing the configuration of the tilt angle sensor according to the tenth embodiment of the present invention
  • FIG. 49 (b) is a plan view of A 1 in FIG. 49 (a).
  • FIG. 2 is a cross-sectional view taken along line A1.
  • FIG. 50 (a) is a diagram defining the coordinate system of the oblique angle sensor as viewed from a cross section of the silicon substrate 102 cut in the longitudinal direction
  • FIG. 50 (b) is a diagram illustrating the silicon substrate 10
  • FIG. 4 is a diagram defining a coordinate system of an inclination angle sensor when viewed from a cross section taken along a short side of FIG.
  • Fig. 51 (a) is a circuit diagram showing the wiring configuration of the piezoresistors R11, R12, R13, and R14.
  • Fig. 51 (b) shows the piezoresistors R21, R22.
  • FIG. 3 is a circuit diagram showing a connection configuration of R23, R23 and R24.
  • FIG. 52 is a diagram showing dimensional conditions of the silicon substrate 102 and the piezoresistor.
  • FIG. 53 (a) is a circuit diagram showing a connection configuration of the piezoresistors R11, R12, R13 and R14, and
  • FIG.53 (b) is a piezoresistor R21.
  • R22, R23, and R24 are circuit diagrams showing connection configurations.
  • FIG. 54 (a) is a graph showing the change of the output mi £ V o 1 when the inclination angle ⁇ is changed while keeping the inclination angle ⁇ constant.
  • 11 is a graph showing a change in the output V o1 when the inclination angle ⁇ is changed.
  • Fig. 55 (a) is a graph showing the change in the output lEV o2 when the tilt angle ⁇ is changed while keeping the tilt angle ⁇ constant.
  • Fig. 55 (b) shows the change in the output lEV o2 when the tilt angle ⁇ is constant.
  • 7 is a graph showing a change in the output voltage Vo 2 when the inclination angle ⁇ is changed.
  • FIG. 56 is a plan view showing a configuration of the tilt angle sensor according to the eleventh embodiment of the present invention.
  • FIG. 57 (a) is a circuit diagram showing a connection configuration of the piezo resistors R31, R32, R33 and R34, and
  • FIG. 57 (b) is a piezo resistor R41 and R42.
  • FIG. 3 is a circuit diagram showing a connection configuration of FIG. Figure 58 shows the silicon substrate 102 and the piezo resistor. It is a figure which shows the dimension condition of resistance.
  • FIG. 59 (a) is a circuit diagram showing a connection configuration of the piezo resistors R31, R32, R33 and R34
  • FIG. 59 (b) is a piezo resistor R41 and R4.
  • FIG. 2 is a circuit diagram showing a connection configuration of FIG. Fig. 60 (a) is a graph showing the change in output mEEVo3 when the inclination angle ⁇ is changed while keeping the inclination angle ⁇ constant.
  • Fig. 60 (b) shows the change in the output angle 6 is a graph showing a change in the output voltage V ⁇ 3 when the inclination angle ⁇ is changed.
  • FIG. 61 (a) is a graph showing the change of the output voltage V ⁇ 4 when the inclination angle ⁇ is changed while keeping the inclination angle ⁇ constant
  • Fig. 61 (b) is a graph showing that the inclination angle ⁇ is constant
  • 11 is a graph showing a change in the output voltage V o4 when the inclination angle ⁇ is changed in the following manner.
  • FIG. 62 is a plan view showing a configuration of the tilt angle sensor according to the 12th embodiment of the present invention.
  • FIG. 63 (a) is a circuit diagram showing a connection configuration of the piezo resistors R51, R52, R53 and R54
  • FIG. 63 (b) is a piezo resistor R51, R5.
  • FIG. 10 is a circuit diagram showing another connection configuration of 2, 53, and 54.
  • FIG. 64 is a diagram showing dimensional conditions of the silicon substrate 102 and the piezoresistor.
  • Fig. 65 (a) is a circuit diagram showing the connection configuration of the piezo resistors R51, R52, R53, and R54, and
  • Fig. 65 (b) is a piezo resistor R51, R5.
  • FIG. 9 is a circuit diagram showing another connection configuration of 2, R53, and R54.
  • Fig. 66 (a) is a rough graph showing the change in output 3 ⁇ 4 ⁇ Vo 5 when the inclination angle ⁇ is changed while keeping the inclination angle ⁇ constant.
  • Fig. 66 (b) shows the 11 is a graph showing a change in the output voltage V o5 when the inclination angle ⁇ is changed.
  • Fig. 67 (a) is a graph showing the change in the output voltage V ⁇ 6 when the tilt angle ⁇ is changed while keeping the tilt angle ⁇ constant.
  • Fig. 67 (b) shows the change in the output voltage V 11 is a graph showing a change in the output voltage V o 6 when the inclination angle ⁇ is changed in the following manner.
  • Fig. 68 (a) shows the change of the output voltage V ⁇ 5 for each material when the tilt angle ⁇ is fixed and the tilt angle ⁇ is changed when the material of the weight member 104 is changed.
  • Fig. 68 (b) shows the change in the output voltage V o5 when the material of the weight member 104 was changed and the tilt angle ⁇ was changed while the tilt angle was constant. Is a graph showing for each material.
  • Fig. 69 (a) shows the weight member 104 with different materials.
  • FIG. 69 (b) is a graph showing the change of the output voltage V ⁇ 6 for each material when the inclination angle ⁇ is changed while keeping the inclination angle ⁇ constant in FIG.
  • FIG. 9 is a graph showing a change in the output voltage Vo 6 for each material when the tilt angle ⁇ is changed while keeping the tilt angle constant in the case of the above.
  • FIG. 70 is a block diagram showing the configuration of the azimuth sensor according to the present invention.
  • FIG. 71 is a diagram showing the arrangement of piezoresistors R11, R12, R13 and R14
  • FIG. FIG. 6 is a diagram showing an arrangement of resistors R21, R22, R23 and R24.
  • FIG. 73 shows the arrangement of the piezoresistors R31, R32, R33 and R34
  • FIG. 74 shows the arrangement of the piezoresistors R41 and R42
  • FIG. 75 shows the arrangement of the piezoresistors R51 , R52, R53, and R54.
  • FIG. 76 (a) is a perspective view showing a schematic configuration of a conventional tilt angle sensor
  • FIG. 76 (b) is a cross-sectional view showing a schematic configuration of a conventional tilt angle sensor
  • FIG. 76 (c) is a conventional tilt angle sensor. It is sectional drawing which expands and shows the part of the piezo resistance of an angle sensor.
  • Fig. 77 (a) shows the increase / decrease of each piezo resistance during acceleration of the conventional tilt angle sensor in the X and Y directions.
  • Fig. 77 (b) shows the acceleration of the conventional tilt angle sensor in the Z direction.
  • FIG. 9 is a diagram showing an increase and decrease of each piezoresistance at the time.
  • FIGS. 1 to 6 are views showing a first embodiment of a tilt angle sensor and a method of manufacturing the tilt angle sensor according to the present invention.
  • FIG. 1 is a sectional view showing the operation of the tilt angle sensor according to one embodiment of the present invention. Note that the embodiment of FIG. 1 shows a configuration in which four tilt resistors R 1 to R 4 are provided on a silicon substrate 1 as a double-sided tilt angle sensor.
  • piezoresistors R 1 to R 4 are formed on the front surface of the silicon substrate 1, and the back surface is uniformly ground to a flexible thickness, and a convex portion 3 is provided in the center of the silicon substrate 1.
  • a weight member 3 is provided via a.
  • a support member 2 having a recess 2 a is provided on the back surface of the silicon substrate 1. Both ends of the silicon substrate 1 are supported by the support member 2.
  • a displaceable area on the surface on which the piezoresistors R1 to R4 are formed is formed.
  • a force FZ in the Z direction is applied to the weight member 3, and the weight member 3 tries to move in the Z direction. .
  • the back surface of the silicon substrate 1 is uniformly ground to a thickness that can be radiused, and the recess 2a is provided on the back surface of the silicon substrate 1, so that the silicon substrate 1 is deformed and the piezo resistance R 1 , R4 is subjected to compressive stress, and the piezoresistors R2, R3 are subjected to tensile stress. Then, the resistance values of the piezoresistors R1 to R4 increase or decrease according to these stresses.
  • FIG. 1 (b) when the tilt angle sensor receives a component force of gravity in the X direction, a force F X in the X direction is applied to the weight member 3, and the weight member 3 tries to move in the X direction.
  • the silicon substrate 1 is deformed, compressive stress is applied to the piezoresistors Rl and R3, and tensile stress is applied to the piezoresistors R2 and R4.
  • the resistance value increases or decreases.
  • FIG. 1 (c) when the tilt angle sensor is tilted, the weight member 3 is pulled by the weight W in the vertical direction, so that a force component WX is applied in a direction parallel to the silicon substrate 1, and the silicon substrate 1 A vertical force component WZ is applied.
  • the silicon substrate 1 is deformed, tensile stress is applied to the piezoresistors R2 and R4, and compressive stress is applied to the piezoresistors R1 and R3.
  • the resistance value increases or decreases. Therefore, by forming a Wheatstone bridge circuit composed of these piezoresistors R1 to R4, the inclination of the inclination angle sensor can be obtained.
  • the back surface is uniformly ground to a thickness that allows it to be radiused, and both ends of the silicon substrate 1 are supported by the support member 2 having the concave portion 2a, thereby simplifying the configuration and the manufacturing process of the tilt angle sensor, The cost of the tilt angle sensor can be reduced, and the resistance to impact can be improved.
  • the silicon substrate 1 has a hexahedral strip shape, and the silicon substrate preferably has a length-to-width ratio of 4 to 40 times and a thickness of 20 m or more and 200 or less. .
  • the silicon substrate 1 is used as it is as the displacement portion, the required detection sensitivity can be obtained, and the strength required for coupling the support member 2 and the weight member 3 to the silicon substrate 1 can be secured.
  • FIG 2, 3 and 6 are cross-sectional views showing the steps of manufacturing the tilt angle sensor according to the first embodiment of the present invention. Note that the first embodiment shows a manufacturing process of a doubly supported tilt angle sensor.
  • a silicon wafer 11 having a thickness of about 550 / im and a diameter of 6 inches is prepared.
  • a piezoresistor 12 (piezoresistor forming region) is formed on the silicon wafer 11 by selectively ion-implanting impurities using photolithography technology.
  • the piezoresistor 12 may actually be mainly composed of two or more piezoresistive elements.
  • a conductive layer is formed on the entire surface of the silicon wafer 11 by sputtering or vapor deposition, and the conductive layer is patterned using photolithography technology and etching technology.
  • a protection film 14 such as a silicon nitride film or a silicon oxide film is formed by CVD (chemical vapor deposition) or sputtering.
  • the protective film 15 is spread over the silicon wafer 11 on which the protective film 14 is formed.
  • the protective film 15 for example, an occupation sheet or the like can be used.
  • polishing or etching can be used as a grinding method.
  • a silicon wafer 11 having an initial thickness of 550 ⁇ is polished to a residual thickness of 150 m, It may be ground by etching until the wafer 11 has a residual thickness of 50 ⁇ .
  • back surface of silicon wafer 11 may be ground by CMP (chemical mechanical polishing).
  • the glass wafer 21 having the groove 21 a formed thereon is bonded to the back surface of the silicon wafer 11.
  • glass wafer 2 1 is silicon
  • the groove 21 a is directed toward the silicon wafer 11, and the groove 21 a is arranged so as to correspond to the piezoresistor 12 formation region.
  • a glass having a high ion mobility, such as sodium glass is used as the glass wafer 21, and the positive electrode is applied by applying a high voltage of about 1 KV to the silicon wafer 11 to selectively perform the bonding. Strong bonding strength can be obtained.
  • the groove 2 la may be left in a hollow state.
  • the surface of the glass wafer 21 may be flattened by filling a filling member 22 such as a normal glass or resin which is not anodically bonded. .
  • the groove 21a can be made hollow after the silicon wafer 11 is cut into chips.
  • FIG. 4A is a plan view showing the configuration of a glass wafer according to the first embodiment of the present invention
  • FIG. 4B is a plan view showing the configuration of the glass wafer according to the first embodiment of the present invention.
  • a glass wafer 21 has a chip cut out of a silicon wafer 11.
  • a groove 21a corresponding to the E row is formed, and the width of the groove 21a is set to correspond to the size of the formation region of the piezoresistor 12 for one chip. For example, if the length of one chip of the tilt angle sensor is 3 mm, the width of the groove 21a is set to 2 mm.
  • D1 to D6 are dicing lines, and the glass wafer 21 bonded to the silicon wafer 11 is cut into chips along the dicing lines D1 to D6. Therefore, for example, one oblique angle sensor can be cut out from the area surrounded by the dicing lines D1 to D3.
  • a two-sided tilt angle sensor can be configured.
  • the weight wafer 31 provided with the protrusions 31a is bonded onto the silicon wafer 11.
  • the convex portions 3 la are provided corresponding to each chip cut out from the silicon wafer 11.
  • the protrusion 31 a is directed toward the silicon wafer 11, and the protrusion 31 a is positioned at the longitudinal center of each chip. The weight wafer 31 is placed.
  • FIG. 5A is a cross-sectional view illustrating the configuration of a weight wafer according to the first embodiment of the present invention
  • FIG. 5B is a cross-sectional view illustrating the configuration of the weight wafer according to the first embodiment of the present invention.
  • D1 to D8 are dicing lines, and the weight wafer 31 bonded to the silicon wafer 11 is connected to the dicing lines D1 to D8 together with the glass wafer 21 bonded to the silicon wafer 11. It is cut into chips along.
  • an opening 31b is provided in the weight wafer 31 and the vertical dicing lines D1 and D2 are set at the center of the opening 31b so that the weight wafer 31 is not covered with the weight wafer 31. Regions can be provided on both sides of each chip, and wire bonding can be easily performed on each chip.
  • the silicon substrate 11 is bonded to the supporting member 21 ′ and the weight member by dicing the silicon wafer 11 on which the glass wafer 21 and the weight wafer 31 are bonded. 3 1 'and cut out into a chip.
  • the length of one chip can be, for example, 3 mm.
  • both ends of the silicon substrate 11 ′ are supported by the support member 21 ′.
  • a gap is formed between the silicon substrate 11 'and the support member 21' so that the silicon substrate 11 'can flex between the support member 21'.
  • the silicon substrate 11 ' cut out together with the support member 2' and the weight member 31 'is die-bonded on the lead frame 41.
  • the silicon substrate 11 ' is connected to the lead frame 41 by wires 42a and 42b by wire bonding to the silicon substrate 11'.
  • the opening 31 b is provided in the weight wafer 31, and the length of the weight member 31 ′ cut out from the weight wafer 31 is shorter than the length of the silicon substrate 11 ′. For this reason, both ends of the silicon substrate 1 1 ′ can be exposed from the weight member 3 1 ′, thereby preventing the weight member 3 1 ′ from obstructing wire bonding on the silicon substrate 11 ′. can do.
  • the first embodiment it is possible to manufacture a double-sided tilt angle sensor without forming irregularities on the silicon substrate 11 ′ itself, and to provide the support member 21 ′
  • the weight member 3 1 ′ and the weight member 3 1 ′ can be collectively formed on a plurality of chips, so that the support member 21 ′ and the weight member 31 ′ do not need to be arranged for each chip.
  • the configuration and manufacturing process of the tilt angle sensor can be simplified, the cost of the tilt angle sensor can be reduced, and the resistance to impact can be improved. .
  • FIG. 7 is a diagram showing a second embodiment of the tilt angle sensor and the method of manufacturing the tilt angle sensor according to the present invention.
  • FIG. 7 is a cross-sectional view illustrating a manufacturing process of the tilt angle sensor according to the second embodiment of the present invention.
  • the weight member 33 of the tilt sensor of the both-sided type is arranged via the pedestal 32.
  • the pedestal 32 is bonded onto the silicon wafer 11.
  • the pedestal 32 is provided for each chip cut out from the silicon wafer 11 and is arranged so as to be located at the center in the longitudinal direction of each chip.
  • the height of the pedestal 32 is set so that the surface of the pedestal 32 is at a position higher than the apex of the arch of the wires 42a and 42b.
  • the silicon wafer 11 to which the pedestal 32 is bonded is obtained by dicing the silicon wafer 11 to which the pedestal 32 is bonded while the glass wafer 21 is bonded. 'Together with the support member 2 1' is cut out into a single chip.
  • the silicon substrate 11 ′ provided with the support member 21 ′ and the pedestal 32 is die-bonded on the lead frame 41.
  • the silicon substrate 11 'and the lead frame 41 are connected by wires 42a and 42b by performing wire bonding on the silicon substrate 11'.
  • a weight member 33 is bonded onto the pedestal 32.
  • the weight member 33 is adhered onto the pedestal 32 after wire bonding of the silicon substrate 11 ′. Can be prevented, and the weight member 33 can be made larger to improve the detection sensitivity of the tilt angle sensor. Further, the weight member 33 can be individually arranged for each chip, and the weight member 33 can protrude from the chip, so that the degree of freedom in the arrangement of the weight member 33 can be improved.
  • FIG. 8 to 12 are views showing a third embodiment of the tilt angle sensor and the method of manufacturing the tilt angle sensor according to the present invention.
  • FIGS. 8 to 12 are cross-sectional views showing the manufacturing process of the tilt angle sensor according to the third embodiment of the present invention.
  • the third embodiment shows a manufacturing process of a cantilever type inclination angle sensor.
  • a silicon wafer 51 having a thickness of about 550 ⁇ ⁇ and a diameter of 6 inches is prepared.
  • a piezoresistor 52 is formed on the silicon wafer 51 by selectively ion-implanting an impurity by using a photolithography technique.
  • the piezoresistor 52 is actually composed of two or more piezoresistors. You may make it comprise from a child.
  • a conductive layer is formed on the entire surface of the silicon wafer 51 by sputtering or vapor deposition, and the conductive layer is patterned by using a photolithography technique and an etching technique.
  • a circuit pattern 53 is formed.
  • a protective film 54 such as a silicon nitride film or a silicon oxide film is formed by CVD (chemical vapor deposition) or sputtering.
  • a protective film 55 is attached on the silicon wafer 51 on which the protective film 54 is formed.
  • the protective film 55 for example, an adhesive sheet or the like can be used.
  • the entire back surface of the silicon wafer 51 is ground.
  • polishing or etching can be used as a grinding method.
  • a silicon wafer 51 having an initial thickness of 550 ⁇ is polished to a residual thickness of 150 // m, and The silicon wafer may be ground by etching until the residual thickness of 51 / m becomes 50 / m.
  • back surface of silicon wafer 51 may be ground by CMP (chemical mechanical polishing).
  • the glass wafer 61 on which the grooves 61 a are formed is bonded to the back surface of the silicon wafer 51.
  • the groove 61a force is applied to the silicon wafer 51 side and the piezoresistor 52 is formed on the scribe line and the scribe line.
  • the glass wafer 61 is placed on the back surface of the silicon wafer 51.
  • a glass having a high ion mobility such as sodium glass
  • a positive voltage of about 1 KV is applied between the glass wafer 61 and the silicon wafer 51 to selectively perform the positive electrode bonding. Strong bonding strength can be obtained.
  • the groove 6 la may be left in a hollow state, but may be filled with a filling member 62 such as a normal glass or resin which is not anodically bonded, and the surface of the glass wafer 61 may be flattened. ,.
  • a filling member 62 such as a normal glass or resin which is not anodically bonded
  • the grooves 61a can be made hollow.
  • FIG. 10 (a) is a plan view showing a configuration of a glass wafer according to the third embodiment of the present invention
  • FIG. 10 (b) is a configuration of a glass wafer according to the third embodiment of the present invention.
  • a groove 61 a corresponding to a chip arrangement cut out from a silicon wafer 51 is formed in a glass wafer 61, and the groove 61 a forms a piezoresistor 52 forming area and a scribe for one chip.
  • the width of the groove 61a is set so as to cover the line. For example, if the length of one chip of the tilt angle sensor is 3 mm, the width of the groove 2 la is set to 2.5 mm.
  • D11 to D17 are dicing lines, and the glass wafer 61 bonded to the silicon wafer 51 is cut into chips along the dicing lines D11 to D17. Therefore, for example, one tilt angle sensor can be cut out from a region surrounded by the dicing lines D11 to D12 to D15.
  • the grooves 61 a of the glass wafer 61 are arranged so as to overlap the vertical scribing lines of the silicon wafer 51, and the vertical dicing lines D 11 to D 13 are connected to the ends of the grooves 61 a.
  • the support member can be left on one side of the groove 61a for each chip, and a cantilever type inclination angle sensor can be configured.
  • a pedestal 71 is bonded to each chip cut out from the silicon wafer 51.
  • the arrangement position of the pedestal 71 is set so as to be on the opposite side of the longitudinal direction from the position where each chip is supported by the glass wafer 61.
  • 5 1 ′ is integrated with the supporting member 6 1 ′ into a chip. Cut it out.
  • the length of one chip can be, for example, 3 mm.
  • a weight member 72 is bonded onto the pedestal 71.
  • FIG. 11B by removing the embedded member 62 filled in the support member 61 ′, one side of the silicon substrate 51 ′ is supported by the support member 61 ′.
  • a gap is formed between the silicon substrate 5 1 ′ and the support member 6 1 ′ so that the silicon substrate 5 1 ′ can be bent with the support member 6 1 ′ as a fulcrum.
  • FIG. 11C the silicon substrate 5 provided with the supporting member 61 ′ and the weight member 72 is die-bonded on the lead frame 81.
  • the silicon substrate 51 ′ is connected to the lead frame 81 by wires 82 by performing wire bonding to the silicon substrate 51 ′.
  • the silicon substrate 51 ' is wire-bonded after the weight member 72 is bonded to the pedestal 71, but the silicon substrate 51 is wire-bonded.
  • the weight member 72 may be attached to the pedestal 71, whereby the weight member 72 can be prevented from obstructing the wire bonding.
  • a cantilever-type inclination angle sensor can be manufactured without reducing the manufacturing process, and the position where the silicon substrate 5 is supported by the support member 6 1 ′ can be manufactured.
  • the distance between the weight member 72 and the position where the weight member 72 is supported by the silicon substrate 51 ′ can be increased, and the silicon substrate 5 can be bent more efficiently.
  • the detection sensitivity of the tilt angle sensor can be improved without increasing the length of the tilt angle sensor in the longitudinal direction, and the tilt angle sensor can be reduced in size.
  • FIG. 13 is a diagram showing a tilt angle sensor and a method of manufacturing the tilt angle sensor according to a fourth embodiment of the present invention.
  • FIG. 13 is a cross-sectional view illustrating a configuration of the tilt angle sensor according to the fourth embodiment of the present invention.
  • a piezoresistor 9 2 and a circuit pattern 9 3 are formed on the surface of the silicon substrate 9 1, and the back surface of the silicon substrate 9 1 is uniformly ground to a thickness that can be radiused. .
  • a support member 95 having a concave portion 95a is provided on the back surface of the silicon substrate 91, and one end of the silicon substrate 91 is supported by the support member 95. Is provided with a weight member 97 via a pedestal 96, and the pedestal 96 is arranged at the other end of the silicon substrate 91.
  • the back surface of the support member 95 is adhered to a lead frame 98, and the lead frame 98 and the bonding pad of the circuit pattern 93 are connected by a wire 99.
  • the height of the pedestal 96 is set so that the surface of the pedestal 96 is located at a position higher than the vertex of the arch of the wire 99, and the pedestal 96 is positioned at the end of the weight member 97. Hold the weight member 97 with.
  • the member 97 can be prevented from coming into contact with the wire 99, and the tilt angle sensor can be made more compact while improving the detection sensitivity of the tilt angle sensor.
  • the support member 95 is made of glass having a high ion mobility, such as sodium glass, and the recess 95 a of the support member 95 has a buried member such as ordinary glass or resin that is not anodically bonded. And the surface of the support member 95 is flattened.
  • the layout is such that the silicon substrate 91 is located below the support member 95. Accordingly, when the silicon substrate 91 is made horizontal, the silicon substrate 91 can receive a stress in a direction away from the embedding member 100 by the static load of the weight member 97 due to gravity.
  • the surface of the support member 95 can be flattened while preventing the embedded member 100 from hindering the displacement of the silicon substrate 91, and the inclination angle sensor can be set to about ⁇ 90 degrees from the horizontal. It can function well in the range.
  • the substrate 91 can be supported by the embedding member 100, thereby preventing the silicon substrate 91 from cracking and reducing the manufacturing cost of the tilt angle sensor.
  • the process of removing the embedded member 100 is not required, and the manufacturing process can be simplified.
  • the manufacturing cost of the tilt angle sensor can be further reduced, and the silicon substrate 91 can be embedded with the embedded member 100 even when an impact is applied to the tilt angle sensor when the tilt angle sensor falls. It is possible to prevent the silicon substrate 91 from being broken.
  • FIG. 14 to FIG. 18 are views showing a fifth embodiment of a method of manufacturing the tilt angle sensor and the most specific tilt angle sensor according to the present invention.
  • the fourth embodiment shows a manufacturing process of a cantilever type inclination angle sensor.
  • a silicon wafer 11] having a thickness of about 5500 ⁇ and a diameter of 6 inches is prepared.
  • a piezoresistor 112 is formed on the silicon wafer 1] .1 by selectively ion-implanting an impurity using a photolithography technique. Then, a conductive layer is formed on the entire surface of the silicon wafer 11 by sputtering or vapor deposition, and the conductive layer is patterned using photolithography and etching techniques.
  • a protective film 114 such as a silicon nitride film or a silicon oxide film is formed by CVD (chemical vapor deposition) or sputtering.
  • the protective film 1 15 is spread over the silicon wafer 111 on which the protective film 114 is formed.
  • an adhesive sheet can be used as the protective film 115.
  • the entire back surface of the silicon wafer 111 is ground.
  • polishing or etching can be used as a grinding method.
  • a silicon wafer 11 having an initial thickness of 550 / im is polished to a residual thickness of 150 / im, and a silicon wafer is further polished. Grinding may be performed by etching until 1 1 1 has a residual thickness of 50 / im.
  • the back surface of the silicon wafer 111 may be polished by CMP (chemical mechanical polishing).
  • the glass wafer 121 on which the grooves 121 a and 121 b are formed is bonded to the back surface of the silicon wafer 111.
  • the grooves 121a and 121b face the silicon wafer 111 side, and the grooves 121a and 122 lb correspond to each other.
  • one of the grooves 1 2 1 a and 1 2 1 b is applied to the scribe line of the silicon wafer 1 1, and each groove 1 2 1 a and 1 2 Arrange so that the other line of 1b does not overlap the scribe line of the silicon wafer 111.
  • the grooves 121a and 121b may be left hollow,
  • the surface of the glass wafer 121 may be flattened by filling the embedded members 122a and 122b such as ordinary glass or resin.
  • the silicon wafer 11 When a material such as a resin which can be selectively removed with a solvent or the like is filled, the silicon wafer 11 is cut into chips, and the grooves 121a and 121b are made hollow. Is also good.
  • FIG. 16A is a plan view showing a configuration of a glass wafer according to a fifth embodiment of the present invention
  • FIG. 16B is a plan view showing a configuration of a glass wafer according to the fifth embodiment of the present invention.
  • grooves 121 a and 121 b corresponding to the chip arrangement cut out from the silicon wafer 111 are formed in the glass wafer 121, and the width of the grooves 121 a and 121 b is , 121b Force S, including the formation area of the piezoresistor 1 12 for one chip, and one line of each groove 121a, 121b is applied to the scribe line of the silicon nozzle 111, and each groove 121a, 121 The other line of b is set so as not to extend over the scribe line of the silicon wafer 11.
  • D21 to D28 and D31 to D34 are dicing lines, and the glass wafer 121 bonded to the silicon wafer 111 is cut into chips along the dicing lines D21 to D28 and D31 to D34. Is done. Therefore, for example, one oblique angle sensor can be cut out from a region surrounded by the dicing lines 1321, 025, 031, and 032.
  • the vertical dicing lines D21 and D22 are set at the center of the convex portion of the glass wafer 121, and the vertical dicing lines D23 to D28 are set so as to cover the ends of the grooves 121a and 121b.
  • the support member can be left on one side of the grooves 121a and 121b for each chip, and a cantilever tilt angle sensor can be configured.
  • the weight wafer 131 provided with the protrusion 131a is bonded onto the silicon wafer 111.
  • the protrusion 131a is a silicon wafer It is provided corresponding to two rows of chips cut out from the nodes 1 1 1. Then, when bonding the weight weight, 131, onto the silicon wafer 1 1 1 1, the projection 1 3 1 a faces the silicon wafer 1 1 1 side, and the projection 1 3 1 a straddles the scribe line, The weight wafer 13 1 is placed on the edge of the chip on both sides thereof.
  • FIG. 17A is a cross-sectional view illustrating a configuration of a weight wafer according to the fifth embodiment of the present invention
  • FIG. 17B is a cross-sectional view of the weight wafer according to the fifth embodiment of the present invention. It is a top view which shows a structure.
  • D 21 to D 28 and D 31 to D 34 are dicing lines, and the weight wafer 13 1 bonded to the silicon wafer 11 1 is a glass wafer bonded to the silicon wafer 11 1 Together with 121, it is cut into chips along D21-D28 and D31-D34.
  • H 1 to H 4 are half dicing lines.
  • the weight wafer 13 1 is bonded to the silicon wafer 11 1, and is half-diced along the half dicing lines H 1 to H 4.
  • the central portion of the concave portion between the convex portions 13a of the weight wafer 13 is cut off.
  • the weight wafer 1 3 1 1 is bonded to the silicon wafer 1 1 1 1, and the area not covered with the weight weight 1 13
  • the chip bonding can be easily performed on each chip.
  • the weight wafer 13 1 1 can be provided at the end of each chip only by cutting at the position a.
  • the silicon wafer 11 on which the glass wafer 121 and the weight bar 131 'are bonded] is diced along dicing lines D21 to D28 and D31 to D34.
  • the silicon substrate 111 ' is cut out integrally with the support member 121' and the weight member 131 '' into chips.
  • the length of one chip can be, for example, 3 mm.
  • one end of the silicon substrate 111' becomes the support member 121 '.
  • a gap is formed between the silicon substrate 111 'and the support member 121' so as to be supported, and the silicon substrate 111 'can be bent with the support member 121' as a fulcrum.
  • the silicon substrate 11 cut out together with the support member 121 ′ and the weight member 131 ′ ′ is die-bonded onto the lead frame 141.
  • the silicon substrate 111 ′ is connected to the lead frame 141 by wire bonding by performing wire bonding on the silicon substrate 111 ′.
  • one end of the silicon substrate 111 ′ can be exposed from the weight member 131 ′ ′, and the weight member 131 ′ ′ interferes with the silicon substrate 111 ′. It can be prevented that wire bonding cannot be performed thereon.
  • the fifth embodiment it is possible to manufacture a cantilever-type inclination angle sensor without providing irregularities on the silicon substrate 111 ′ itself, and furthermore, the support member 121 ′ and the weight member Since it is possible to integrally form 131 and ′ on a plurality of chips, it is not necessary to arrange the support member 121 ′ and the shingle member 131 ′ for each chip.
  • each groove 121.a, 121b is provided for each chip 7S row.
  • the two grooves 121a and 12lb may be connected to each other, and one groove may be used to cover two rows of chips.
  • FIGS. 19 to 23 are views showing a sixth embodiment of the tilt angle sensor according to the present invention.
  • FIG. 19 (a) is a perspective view showing a schematic configuration of an inclination angle sensor according to a sixth embodiment of the present invention
  • FIG. 19 (b) is an inclination angle sensor according to a sixth embodiment of the present invention.
  • FIG. 2 is a plan view showing the configuration of the silicon substrate surface of FIG.
  • a two-axis tilt angle sensor is configured using a single silicon substrate having a uniform thickness.
  • piezoresistors R11 to R16 and terminals P1 to P9 are formed on a surface 151a of a silicon substrate 151, and piezoresistors R11 to R16 and terminals P1 to P9 are formed. Is formed, and the back surface 151b of the silicon substrate 151 is uniformly ground to a thickness at which the silicon substrate 151 can be radiused.
  • a support member joining region J1 is provided at one longitudinal end of the silicon substrate 151, and a pedestal contact region J2 is provided at the other longitudinal end of the silicon substrate 151.
  • the support member 152 is joined via the convex portion 152a, and the weight member 154 is joined via the pedestal 153 to the pedestal contact area J2. Note that the support member 152 is disposed on the back surface of the silicon substrate 151, and the weight member 154 is disposed on the front surface of the silicon substrate 151.
  • the piezoresistors R11, R13, and R15 are arranged near the pedestal joint region J2, and the piezoresistors R12, R14, and R16 are arranged near the support member joint region J1. Is done.
  • FIG. 20 is a perspective view showing an operation when the tilt angle sensor of FIG. 19 is tilted around the Y axis.
  • the tensile stress of the piezoresistor R11 and the compressive stress of the piezoresistor R12 increase, and the resistance of the piezoresistors R11 and R12 increases and decreases according to the fluctuation of these stresses.
  • FIG. 21 is a circuit diagram showing the connection configuration of the piezo resistors R 11 and R 12 in FIG. 19 (b).
  • the piezo resistors R 11 and R 12 are connected in series, and the terminal P 4 is connected to the terminals P 6 and P 5 via the piezo resistors R 11 and R 12, respectively. Then, by applying the voltage E between the terminals P5 and P6 and detecting the voltage VI between the terminals P4 and P6, the oblique angle around the Y axis can be obtained.
  • Fig. 22 (a) is a perspective view showing the operation when the tilt angle sensor of Fig. 19 is tilted around the X axis, and Fig. 22 (b) is cut along the line E2-E2 in Fig. 19 (b).
  • FIG. 22 (c) is a sectional view taken along line E3-E3 in FIG. 19 (b).
  • the tensile stress on the piezoresistor R13 and the compressive stress on the piezoresistor R14 decrease, and the tensile stress on the piezoresistor R15 and the compressive stress on the piezoresistor R16 Increases. Therefore, the resistances of the piezoresistors R13 to R16 increase or decrease according to the fluctuations of these stresses.
  • FIG. 23 is a circuit diagram showing a connection configuration of the piezo resistors R13 to R16 in FIG. 19 (b).
  • the piezoresistors R13 to R16 form a bridge circuit. That is, a piezo resistor R 14 is connected between the terminals P 1 and P 2, a piezo resistor R 13 is connected between the terminals P 2 and P 3, and a piezo resistor R 15 is connected between the terminals P 7 and P 8.
  • a piezoresistor R16 is connected between terminals P8 and P9, terminals Pl and P9 are short-circuited, and terminals P3 and P7 are short-circuited.
  • the voltage E is applied between the terminals P2 and P8, and the voltage V2 between the terminals Pl and P3 is detected, whereby the tilt angle around the X axis can be obtained.
  • FIGS. 24 to 26 are views showing a tilt angle sensor according to a seventh embodiment of the present invention.
  • FIG. 24 (a) is a cross-sectional view taken along line FF of FIG. 24 (b)
  • FIG. 24 (b) is a configuration of a silicon substrate surface of a tilt angle sensor according to a seventh embodiment of the present invention.
  • FIG. in the seventh embodiment a single-sided silicon substrate having a uniform thickness is used to constitute a bi-axial, biaxial tilt angle sensor.
  • piezoresistors R21 to R28 and terminals P11 to P22 are formed on the surface of a silicon substrate 161 and piezoresistors R21 to R28 are connected to terminals PI1 to P22.
  • the roosters B ⁇ L2 and L3 are formed, and the back surface of the silicon substrate 161 is uniformly ground to a thickness that allows the silicon substrate 161 to bend.
  • Support member joining regions J 11 and J 12 are provided at both ends of the silicon substrate 161 in the longitudinal direction.
  • a pedestal joining region J 13 is provided at the center of the silicon substrate 161 in the longitudinal direction.
  • a support member 162 is joined to the first and J12 via a convex portion 162a, and a weight member 164 is joined to a pedestal joint region J13 via a pedestal 163.
  • the support member 162 is disposed on the back surface of the silicon substrate 161 and the weight member 16 4 is arranged on the surface of the silicon substrate 161.
  • the piezoresistors R21, R23, R25, and R27 are arranged in the vicinity of the pedestal contact area J13, and the piezoresistors R22, R24, R26, and R28 are connected to the support member contact area J11, It is located near J12.
  • the piezoresistors R21, R22, R27, and R28 are arranged along a central line set in the longitudinal direction, and the piezoresistors R23 to R26 are respectively arranged along parallel lines on both sides of the central line. Two pieces are arranged at equal intervals.
  • the support member 162 When the support member 162 is tilted around the Y-axis with the weight member] .64 hanging, the deflection of the silicon substrate 161 changes. Then, by measuring the amount of change in the resistance values of the piezoresistors R21, R22, R27, and R28 at this time, the tilt angle around the Y axis can be obtained.
  • the support member 162 is tilted around the X axis while the weight member 164 is hanging, the silicon substrate 161 is twisted. Then, by measuring the amount of change in the resistance values of the piezoresistors R23 to R26 at this time, the inclination angle around the X axis can be obtained.
  • FIG. 25 is a circuit diagram showing a connection configuration of the piezo resistors R21, R22, R27, and R28 of FIG. 24 (b).
  • the piezoresistors R21, R22, R27, and R28 form a bridge circuit. That is, a piezo resistor R 22 is connected between the terminals P 14 and P 15, a piezo resistor R 21 is connected between the terminals P 14 and P 16, and a piezo resistor R 28 is connected between the terminals P 20 and P 21.
  • the piezoresistor R27 is connected between the terminals P20 and P22, the terminals P15 and P21 are short-circuited, and the terminals P16 and P22 are short-circuited.
  • FIG. 26 is a circuit diagram showing a connection configuration of the piezoresistors R23 to R26 in FIG. 24 (b).
  • the piezoresistors R 23 -R 26 constitute a bridge circuit. That is, a piezo resistor R 24 is connected between the terminals P 11 and P 12, a piezo resistor R 23 is connected between the terminals P 12 and P 13, and the terminals P 18 and P 19 A piezo resistor R 26 is connected between them, a piezo resistor R 25 is connected between terminals P 17 and P 18, terminals P 11 and P 19 are short-circuited, and terminals P 13 , P17 are short-circuited. Then, by applying mjlE between the terminals P 12 and P 18 and detecting the voltage V 4 between the terminals P 11 and P 13, the inclination angle around the X axis can be obtained.
  • FIG. 27 to FIG. 39 are views showing an eighth embodiment of a method for manufacturing a tilt angle sensor and a peripheral tilt angle sensor according to the present invention.
  • FIG. 27 (a) is a plan view showing a configuration of an inclination angle sensor according to an eighth embodiment of the present invention
  • FIG. 27 (b) is a line A1-A1 in FIG. 27 (a). It is sectional drawing cut
  • piezoresistors R1, R2 and A1 pads P1 to P3 are formed, and the piezoresistors R1, 2 and one pad P1 to P1 are formed. Rooster fi ⁇ H l connecting 3 is formed.
  • solder bumps 4 are formed on the front surface of the silicon substrate 2 through the A1 pad 3, and the back surface of the silicon substrate 2 is uniformly ground to a thickness that can be radiused.
  • a constriction 2a is formed corresponding to the area where the resistors Rl and R2 are arranged.
  • a support member 1 having a recess 1a is provided on the back surface of the silicon substrate 2, and one end of the silicon substrate 2 is supported from the back surface, and the support member 1 has piezoresistors Rl, R2 Is formed near the edge of the concave portion 1a, and the solder bump 4 is disposed on the concave portion 1a.
  • FIGS. 28 (a) and 28 (b) are cross-sectional views showing the operation of the tilt angle sensor according to the eighth embodiment of the present invention, and FIG. 28 (c) is the piezo resistance Rl of FIG. 27 (a).
  • FIG. 3 is a circuit diagram showing a connection configuration of R 2 and R 2.
  • the stress applied to the piezoresistors Rl and R2 fluctuates, and the resistance values of the piezoresistors R1 and R2 increase or decrease according to the fluctuation of the stress.
  • the piezoresistors Rl and R2 are connected in series, and the terminal P2 is connected to the terminals P1 and P3 via the piezoresistors Rl and R2, respectively. I have.
  • the voltage E is applied between the terminals P] and P3, and the voltage VI between the terminals P2 and P3 is detected, whereby the tilt angle around the Y axis can be obtained.
  • FIGS. 29 (a) to 35 (a) show an inclination angle sensor according to the eighth embodiment of the present invention.
  • FIGS. 29 (h) to 35 (b) and FIG. 36 are cross-sectional views showing the manufacturing process of the tilt angle sensor according to the eighth embodiment of the present invention. It is.
  • a silicon substrate 2 having a thickness of about 550 / m and a diameter of 5 inches is prepared.
  • an impurity such as boron is selectively ion-implanted into the silicon substrate 2 to form piezoresistors R 1 and R 2 in each chip region on the silicon substrate 2.
  • an A1 film is formed on the entire surface of the silicon substrate 2 by sputtering or vapor deposition, and the chip area on the silicon substrate 2 is formed by patterning the A1 film using a photolithography technique and an etching technique.
  • the width W 1 of each chip region of the silicon substrate 2 can be, for example, 1.4 mm, and the length L 1 can be, for example, 2.8 mm. It is possible to obtain about 30000 tilt angle sensor chips from the silicon substrate 2 of FIG.
  • a protective film such as an occupying sheet is attached on the silicon substrate 2, and the entire back surface of the silicon substrate 2 is ground until the thickness of the silicon substrate 2 becomes T1.
  • CMP chemical mechanical polishing
  • etching can be used as a method of grinding the silicon substrate 2.
  • the thickness T1 of the silicon substrate 2 can be set to, for example, 100 m, whereby the silicon substrate 2 can be bent while maintaining the strength that the silicon substrate 2 does not break. Can be.
  • the glass substrate 1 having the concave portion 1 a is bonded to the back surface of the silicon substrate 2.
  • the concave portion la is directed to the silicon substrate 2 side.
  • the glass substrate 1 is arranged so that the formation regions of the piezoresistors Rl and R2 are located near the edge of the concave portion 1a, and the solder bump 4 is located on the concave portion 1a.
  • a glass having high ion mobility such as sodium glass can be used as the glass substrate 1, and a high voltage of about 1 KV is applied between the glass substrate 1 and the silicon substrate 2.
  • a strong bonding force can be selectively obtained.
  • the concave portion la may be left in a hollow state, but is filled with an ordinary buried member such as glass or resin that is not anodic bonded, and the surface of the glass substrate 1 is flattened.
  • solder bumps 4 are formed on the A1 pads 3 formed in each chip area on the silicon substrate 2.
  • the size C1 of the solder bump 4 can be, for example, about 0.6 to 1.2 mm, and the height HI of the solder bump 4 is, for example, 0.1 to 0.4 mm. Degree.
  • solder bumps 4 for example, electrolytic plating or screen printing can be used, whereby the solder bumps 4 are collectively formed on all the chips taken out from the silicon substrate 2. And the manufacturing process can be simplified.
  • the specific gravity of the solder bump 4 is more than three times as high as that of glass-silicon, if the same weight effect is obtained, the volume of the solder bump 4 can be reduced to 13 or less, and the size of the solder bump 4 can be reduced. Can be achieved.
  • a constriction 2 a is formed in the silicon substrate 2 by selectively etching the silicon substrate 2 on which the solder bumps 4 are formed by using photolithography technology and etching technology. At the same time, the silicon substrate 2 on the concave portion la is cut off for each chip.
  • etching the silicon substrate 2 for example, wet etching using KOH can be used.
  • the solder bumps 4 are formed on the surface, A silicon substrate 2 whose back surface is supported by a glass substrate 1 is cut out in a chip shape.
  • the silicon substrate 2 having the solder bumps 4 formed on the front surface and the back surface supported by the glass substrate 1 is die-bonded in the package 6.
  • the terminals 7 provided on the package 6 are connected to the A 1 pads P 1 to P 3 formed on the silicon substrate 2 with gold wires 5.
  • the lid 8 is adhered to the package 6 to seal the inclination angle sensor.
  • the shell of the silicon substrate 2 and the glass substrate 1 can be diverted only once, and the back surface of the silicon substrate 2 on which the piezoresistors R 1 and R 2 are formed is not selectively etched, but is bent.
  • a support portion for supporting the piezoresistors R1 and R2 in a possible state can be formed collectively for a plurality of chips.
  • solder bumps 4 having a large specific gravity on the silicon substrate 2 without selectively etching the back surface of the silicon substrate 2 on which the piezo resistors R 1 and R 2 are formed.
  • a constriction 2a can be provided in the area where the piezoresistors Rl and R2 are formed, and the area where the piezoresistors R1 and R2 are formed can be efficiently bent while keeping the thickness of the silicon substrate 2 uniform.
  • the piezoresistors R1, R2, A1 pad 3, P1 to P3 and wiring H1 are formed on the silicon substrate 2, and then the back surface of the silicon substrate 2 is ground.
  • the method of bonding the silicon substrate 2 to the glass substrate 1 having the concave portion 1a has been described, but the silicon substrate 2 before grinding is bonded to the glass substrate 1 having the concave portion 1a, and After the surface of the substrate 2 is ground, the piezoresistors Rl, R2, A1 pad 3, P1 to P3, and cock 1 may be formed on the silicon substrate 2.
  • the force constriction 2a described in the example in which the constriction 2a is provided in order to make the silicon substrate 2 easily bend may not necessarily be provided.
  • the method of etching the silicon substrate 2 in order to separate the silicon substrate 2 around the solder bumps 4 for each chip has been described. The silicon substrate 2 may be separated for each chip.
  • solder bump 4 for each chip has been described, but a plurality of solder bumps 4 may be provided for each chip.
  • FIG. 37 to FIG. 39 are cross-sectional views showing an example of the manufacturing process of the solder bump of the inclination angle sensor according to one embodiment of the present invention.
  • A1 pads 12a and 12b are formed on a silicon substrate 11 by using a photolithography technique and an etching technique.
  • a UBM (Under Bump Metal 1) film 13 is formed on the silicon substrate 11 on which the A1 pads 12a and 12b are formed by sputtering or vapor deposition. I do.
  • a resist 14 is applied on the silicon substrate 11 on which the UBM film 13 is formed, and the opening 14 is formed in a region where a solder bump is to be formed by using photolithography technology.
  • electrolytic copper plating is performed by using the UBM film 13 as a force source electrode to form an electrolytic copper plating layer 15 on the UBM film 13 in which the opening 14a is formed. I do.
  • the electrolytic solder plating is performed on the copper plating plating layer 15 by performing electrolytic solder plating using the UBM film 13 as a force source electrode.
  • an oxygen plasma treatment is performed to remove the resist 14 formed on the silicon substrate 11.
  • the silicon on which the electrolytic solder plating layer 16 is formed is formed.
  • the heat treatment of the solder substrate 11 rounds the electrolytic solder plating layer 16.
  • the UBM film 13 around the electrolytic solder plating layer 16 is removed by dry etching or wet etching.
  • the process can be simplified, the cost of the tilt angle sensor can be reduced, and the weight member can be reduced in size, and the tilt angle sensor can be reduced in size.
  • FIGS. 40 to 48 are views showing a ninth embodiment of a tilt angle sensor and a method of manufacturing the tilt angle sensor according to the present invention.
  • FIG. 40 (a) is a plan view showing the configuration of the tilt angle sensor according to the ninth embodiment of the present invention
  • FIG. 40 (b) is a line B 1 _B 1 in FIG. 40 (a). It is sectional drawing cut
  • a single crystal silicon layer 22 is formed on a silicon substrate 21 via a silicon oxide film 20.
  • A1 pads P21 to P23 are formed, and piezoresistors R21 and R22 are formed.
  • A1 pad A pad line H21 connecting the pads P21 to P23 is formed.
  • a solder bump 24 is formed via an A 1 pad 23, and the single-crystal silicon layer 22 has a piezoresistor R 21,
  • a constriction 22a is formed corresponding to the arrangement region of R22.
  • the silicon oxide film 20 under the single-crystal silicon layer 22 is partially removed corresponding to the arrangement regions of the solder bumps 24 and the piezo resistors R 21 and R 22, and the remaining silicon oxide film is left.
  • the single crystal silicon layer 22 is held in a state where it can be radiused with 20 as a fulcrum.
  • the weight is maintained while the piezo resistors R 21 and R 22 are held in a bendable state.
  • a member can be provided. Also, when supporting the single crystal silicon layer 22 on which the piezo resistors R 21 and R 22 are formed so that stress is applied to the piezo resistors R 21 and R 22, the single crystal silicon layer 22 is thinned. After that, the single-crystal silicon layer 22 does not need to be bonded to the silicon substrate 21.
  • the single crystal silicon layer 22 can be efficiently bent to apply stress to the piezoresistors R21 and R22, and the configuration of the tilt angle sensor is simplified, making it easier to withstand impact. Can be improved.
  • FIGS. 41 (a) to 47 (a) are plan views showing a manufacturing process of the tilt angle sensor according to the ninth embodiment of the present invention
  • FIGS. 41 (b) to 47 (b) and FIG. FIG. 48 is a cross-sectional view showing a manufacturing step of the tilt angle sensor according to the ninth embodiment of the present invention.
  • a 5-inch diameter SII substrate having a single crystal silicon layer 22 formed on a silicon substrate 21 via a silicon oxide film 20 is prepared.
  • the thickness T2 of the single crystal silicon layer 22 can be, for example, about 50 m
  • the thickness T3 of the silicon oxide film 20 can be, for example, about 2 ⁇ .
  • SOI substrate for example, a SIMOX substrate or a laser annealing substrate can be used.
  • an impurity such as boron is selectively ion-implanted into the single-crystal silicon layer 22 using a photolithography technique, so that each chip region on the single-crystal silicon layer 22 has a piezoresistive resistance.
  • R 21 and R 22 are formed.
  • an A1 film is formed on the entire surface of the single-crystal silicon layer 22 by sputtering or vapor deposition, and the A1 film is patterned using photolithography and etching techniques, thereby forming each of the single-crystal silicon layers 22 on the single-crystal silicon layer 22.
  • A1 pad 23, P21 to P23 and rooster H21 are formed in the chip area.
  • the width W2 of each chip region of the single-crystal silicon layer 22 can be, for example, 1. Om m, and the length L2 can be, for example, 2.2 mm. Approximately 5000 tilt angle sensor chips can be obtained from SOI substrate It works.
  • a solder bump 24 is formed on the A1 pad 23 formed in each chip region on the single crystal silicon layer 22.
  • the size C2 of the solder bump 24 can be, for example, about 0.6 to 1.2 mm, and the height H2 of the solder bump 24 is, for example, 0.1 to 0.1 mm. It can be about 4 mm.
  • solder bumps 24 As a method of forming the solder bumps 24, for example, electric plating or screen printing can be used, whereby the solder bumps 24 are collectively applied to all the chips taken out from the SOI substrate. And the manufacturing process can be simplified.
  • the specific gravity of the solder bumps 24 is more than three times higher than that of glass or silicon, if the same weight effect is obtained, the volume of the solder bumps 24 can be reduced to 1 Z 3 or less. It is possible to reduce the size of the bump 24.
  • the single crystal silicon layer 22 on which the solder bumps 24 are formed is selectively etched using photolithography technology and etching technology, thereby forming the single crystal silicon layer 22.
  • a constriction 22a is formed, and the single crystal silicon layer 22 around the solder bump 24 is cut off for each chip.
  • wet etching using KOH can be used as a method for etching the single-crystal silicon layer 22.
  • the SOI substrate on which the constriction 22 a is formed in the single-crystal silicon layer 22 is immersed in a chemical solution such as hydrofluoric acid to selectively remove the single-crystal silicon layer 22.
  • the silicon oxide film 20 is brought into contact with the chemical solution through the portion that has been set.
  • the chemical solution is circulated below the single-crystal silicon layer 22, and the lower portion of the single-crystal silicon layer 22 on which the pads P 21 to P 23 are formed is formed.
  • the silicon oxide film 20 below the single crystal silicon layer 22 on which the solder bumps 24 are formed is removed while leaving the silicon oxide film 20.
  • a gap 20a can be formed below the single crystal silicon layer 22 on which the solder bumps 24 are formed, and the single crystal is formed with the remaining silicon oxide film 20 as a fulcrum.
  • the single crystal silicon layer 22 can be held in a state where the silicon layer 22 can be bent.
  • the SOI substrate having the gap 20a formed below the single-crystal silicon layer 22 is diced along the dicing lines L11 and L12, so that soldering is performed.
  • the bumps 24 are formed on the front surface, and the single-crystal silicon layer 22 whose back surface is supported by the silicon oxide film 20 is cut into chips.
  • the solder bumps 24 are formed on the front surface, and the single crystal silicon layer 22 whose back surface is supported by the silicon oxide film 20 is die-bonded into the package 26. .
  • the terminals 27 provided on the package 26 and the A 1 pads P 21 to P 23 formed on the single-crystal silicon layer 22 are connected with the gold wires 25. .
  • the inclination angle sensor is sealed by bonding a lid 28 to the package 26.
  • solder bump 24 having a large specific gravity can be formed on the single-crystal silicon layer 22 without selectively etching the back surface of the silicon substrate 21 supporting the piezoresistors R 21 and R 22. Thus, it is possible to easily form the solder bump 24 while reducing the size of the solder bump 24.
  • the manufacturing process of the tilt angle sensor can be simplified, the size and cost of the tilt angle sensor can be reduced, and the detection accuracy of the tilt angle sensor can be easily improved.
  • the method of using the SOI substrate to support the single crystal silicon layer 22 with the silicon oxide film 20 has been described.
  • a bonded substrate may be used.
  • the constriction 22a in order to make the single-crystal silicon layer 22 easily bend, although the example in which the constriction 22a is provided has been described, the constriction 22a may not be necessarily provided.
  • the method of etching the single-crystal silicon layer 22 to separate the single-crystal silicon layer 22 around the solder bumps 24 into individual chips has been described.
  • the single crystal silicon layer 22 around the solder bumps 24 may be separated for each chip.
  • solder bump 24 for each chip has been described.
  • a plurality of solder bumps 24 may be provided for each chip.
  • FIG. 49 to FIG. 55 are diagrams showing a tenth embodiment of the tilt angle sensor and the tilt angle measuring method according to the present invention.
  • the tilt angle sensor and the tilt angle measuring method are applied to a case where tilt angles ⁇ and ⁇ in different directions are detected by a plurality of piezoresistors as shown in FIG.
  • FIG. 49 (a) is a plan view showing the configuration of the tilt angle sensor according to the tenth embodiment of the present invention
  • FIG. 49 (b) is a plan view of Al in FIG. 49 (a).
  • FIG. 2 is a cross-sectional view taken along line A1.
  • a support member 101b is formed on the support member 101a, and the support member 101b is provided on the back surface of the end portion 102a of the silicon substrate 102. By bonding, the end portion 102 a of the silicon substrate 102 is supported from the back surface.
  • a weight member 104 is formed on the end 102 b of the silicon substrate 102.
  • a constricted beam portion 102c is formed between the end portion 102a and the end portion 102b of the silicon substrate 102.
  • the bending direction of the silicon substrate 102 is the thickness direction of the silicon substrate 102
  • the twisting direction of the silicon substrate 102 is the center line A 1 -A passing through the middle point of the width of the silicon substrate 102.
  • the rotation direction is around 1 axis.
  • the silicon substrate 102 is an n-type silicon substrate, and is formed to be thin until the weight member 104 can be bent and twisted by a change in the direction of gravity.
  • the crystal plane (100) is formed as a surface, and the ⁇ 110> direction is formed so as to coincide with the longitudinal direction of the silicon substrate 102.
  • the weight member 104 is formed by forming a metal lump such as Au or solder on the surface of the silicon substrate 102 using a bump mounting technique.
  • the piezoresistors R] .1, R12, R13, R14, R21, R22, R23 and R24 are formed on the beam 102c.
  • the piezoresistors R11, R12, R13, R14, R21, R22, R23 and R24 are formed by diffusing p-type impurities such as boron or injecting ions into the surface of the silicon substrate 102. ing.
  • the piezoresistors R11 and R14 are arranged at symmetrical positions with respect to the center line A1-1A1 of the beam portion 102c passing through the midpoint in the short direction of the silicon substrate 102.
  • the piezoresistors R21 and R24 are arranged at positions symmetrical with respect to the center line A1-A1, and are closer to the centerline A1-A1 than the piezoresistors R11 and R14. Are located.
  • the piezoresistors R12 and R13 are arranged at symmetrical positions with respect to the center line A1-A1, and the positions of the piezoresistors R11 and R14 and the silicon substrate 102 in the short direction are the same. It is disposed closer to the weight member 104 than the piezoresistors R11 and R14.
  • the piezoresistors R22 and R23 are arranged at symmetrical positions with respect to the center line A1—A1, and the piezoresistors R21 and R24 and the silicon substrate 2 have the same piezoresistor in the lateral direction. It is arranged closer to the weight member 104 than the resistors R21 and R24.
  • the configuration and the manufacturing process of the tilt angle sensor can be simplified, the size and cost of the tilt angle sensor can be reduced, and the resistance to impact can be improved.
  • FIG. 50 (a) is a diagram defining the coordinate system of the tilt angle sensor when the silicon substrate 102 is viewed from a cross section cut in the longitudinal direction
  • FIG. 50 (b) is a diagram in which the silicon substrate 102 is moved in the lateral direction
  • FIG. 3 is a diagram defining a coordinate system of an inclination angle sensor when viewed from a cut section.
  • the longitudinal direction of the silicon substrate 102 is defined as the X axis
  • the short axis of the silicon substrate 102 is defined as the y axis
  • the axes perpendicular to the X axis and the y axis are defined as the z axis.
  • the X-axis component of the gravity W of the weight member 104 is defined as GX
  • the z-axis component of the gravity W of the weight member 104 is defined as Gz.
  • the angle between the horizontal plane and the X axis is defined as the tilt angle ⁇ (tilt angle around the y axis).
  • FIG. 50 (b) the y-axis component of the gravity W of the weight member 104 is defined as G y, and the angle between the horizontal plane L and the y-axis is defined as an inclination angle ⁇ (the inclination angle around the X-axis).
  • FIG. 51 (a) is a circuit diagram showing the connection configuration of the piezo resistors R11, R12, R13 and R14
  • FIG. 51 (b) is the piezo resistors R21, R22, R23 and R14.
  • 24 is a circuit diagram showing a connection configuration of 24.
  • piezoresistors R11, R12, R13 and R14 constitute a full bridge circuit C1.
  • one end of the piezoresistor R11 is connected to one end of the piezoresistor R13, and piezoresistors R11 and R13 are connected in series.
  • One end of the piezoresistor R12 is connected to the piezoresistor R
  • the piezoresistors R12 and R14 are connected in series by connecting one end of 14.
  • the other end of the piezo resistor R 11 and the other end of the piezo resistor R 14 are connected to the positive potential side of the power supply V i, and the other end of the piezo resistor R 12 and the other end of the piezo resistor R 13 are connected to the power supply V. Connected to the negative potential side of i.
  • the potential difference between one end of the piezoresistor R11 (R13) and one end of the piezoresistor R12 (R14) is defined as the output Vo1 of the full bridge circuit C1.
  • the piezo resistors R 21 and R 22 and the length 23 and 11 24 constitute a full bridge circuit C2.
  • the full-bridge circuit C2 one end of the piezoresistor R21 and one end of the piezoresistor R23 are connected, and the piezoresistors R21 and R23 are connected in series.
  • One end of the resistor R24 is connected, and the piezoresistors R22 and R24 are connected in series.
  • the other end of the piezo resistor R 21 and the other end of the piezo resistor R 24 are connected to the positive potential side of the power supply V i, and the other end of the piezo resistor R 22 and the other end of the piezo resistor R 23 are connected.
  • the potential difference between one end of the piezo resistor R 21 (R 23) and one end of the piezo resistor R 22 (R 24) is defined as the output 3 ⁇ 4EV o 2 of the full bridge circuit C 2.
  • a bending moment occurs in the beam portion 102c due to the ⁇ axial component G ⁇ of the gravity W of the weight member 104, and the beam portion 102b bends, but the tilt angle sensor is rotated around the X axis or y.
  • the direction of W changes and Gz changes, and the amount of deflection also changes.
  • the stress ⁇ X 1 in the X-axis direction on the beam section 102 c due to the bending moment is proportional to G z, and since G z satisfies the relationship of the following equation (1), it is expressed as the following equation (2) Can be.
  • G x generates a bending moment in the beam portion 102 c, it is negligible because it is smaller than the bending moment due to G z.
  • the piezo resistance is p-type Si, and the crystal plane (100) of the silicon substrate 102 is the surface.
  • 3 of the piezoresistance can be expressed by the following equation (5).
  • ⁇ 44 is what is called a piezoresistance coefficient, and is a ⁇ -type Si with an impurity concentration of 10 18 [cm 3 ]. In this case, it is about 1.3 X 1 O Pa- 1 ].
  • Hi 1 is a vertical stress applied to the piezoresistance, and ⁇ t is a horizontal stress applied to the piezoresistance.
  • ⁇ 1 When the piezoresistor is oriented in the X-axis direction, ⁇ 1 can be expressed by the following equation (6).
  • a and B are proportional constants.
  • the resistance change rate of each of the piezoresistors R11, R12, R13, R14, R21, R22, R23 and R24] 311,] 312,] 313, ⁇ 14,] 321,] 322, ⁇ 23 and 324 can be represented by the following equations (8) to (15).
  • Vo l is straightforward in proportion to S in and Vo 2 is straight in proportion to cos ⁇ i> cos.
  • the tilt angle sensor has a tilt angle calculation unit that calculates the tilt angles ⁇ based on the output voltages Vo l and V o2.
  • the inclination angle calculation unit When measuring the inclination angle ⁇ , the inclination angle calculation unit first performs step S100.
  • step S100 El, ⁇ 2 are calculated.
  • Step SI00 may be performed, for example, at the time of factory shipment, and the calculation result may be stored in the nonvolatile memory.
  • step S102 where Vo 1 and Vo 2 are calculated
  • step S104 the inclination angle ⁇ is calculated by the following equation (22)
  • step S106 the process proceeds to step S106.
  • the inclination angle ⁇ is calculated by the equation (23), and a series of processing is completed to return to the original processing.
  • FIG. 52 is a diagram showing dimensional conditions of the silicon substrate 102 and the piezoresistor.
  • the length of the end 102a in the longitudinal direction is 800 [ ⁇ ]
  • the length of the end 102a in the short direction is 200. [ ⁇ ].
  • the length of the beam 102c in the longitudinal direction is 800 [itn]
  • the length of the beam 102c in the short direction is 200. [/ im].
  • the thickness of the silicon substrate 102 is 20 [ ⁇ ].
  • the length of the weight member 104 in the longitudinal direction is 600 [/ im]
  • the length of 04 in the lateral direction is 500 [/ itn]
  • the thickness of the weight member 104 is 30 [ ⁇ ].
  • the material of the weight 104 is gold.
  • the piezo resistors R 11, R 21, R 24 and R 14 are arranged 150 [ ⁇ ] apart from the end 102 a in the longitudinal direction of the silicon substrate 102, and the piezo resistors R 12, R 22 , 1 ⁇ 23 and 113 are arranged at a distance of 200 [/ xm] in the longitudinal direction of the silicon substrate 102 from the piezoresistors R11, R21, R24 and R14.
  • the piezoresistors R24 and R23 are arranged 60 m away from the piezoresistors 14 and R13 in the lateral direction of the silicon substrate 102.
  • the piezoresistors R21 and R22 are Piezo resistance R 24 and R 23?
  • the piezoresistors R11 and R12 are arranged 60 [ ⁇ ] away from the piezoresistors R21 and R22 in the lateral direction of the silicon substrate 102.
  • each piezoresistor R11, R12, R13, R14, R21, R22, R23 and R24 are 50 [ ⁇ m] and 10 [ ⁇ , respectively. ], 10 18 [cm 3 ] and 0.45 [ ⁇ ].
  • FIG. 53 (a) is a circuit diagram showing the connection configuration of the piezo resistors R11, R12, R13 and R14
  • FIG. 53 (b) is the piezo resistors R21, R22, R23 and R14
  • 24 is a circuit diagram showing a connection configuration of 24.
  • connection structure is the same as in FIG. However, the power supply voltage Vi was set to 5 [V] for both the full bridge circuits C1 and C2.
  • Fig. 54 (a) is a graph showing the change of the output ff Vol when the inclination angle ⁇ is changed while keeping the inclination angle constant
  • Fig. 54 (b) is a graph showing the inclination angle ⁇ constant and the inclination angle 6 is a graph showing a change in output IffV o 1 when ⁇ is changed.
  • Fig. 55 (a) is a graph showing the change in the output ff Vo 2 when the inclination angle ⁇ is changed while keeping the inclination angle ⁇ constant.
  • Fig. 55 (b) shows the inclination when the inclination angle ⁇ is constant.
  • 9 is a graph showing a change in output ffVo2 when the angle ⁇ is changed.
  • the silicon substrate 102 having the piezoresistor formed on the surface and the support for supporting the silicon substrate 102 at one end of the silicon substrate 102 are provided.
  • a member 101b, a weight member 104 disposed at an end 102b of the silicon substrate 102, and a tilt angle calculation unit for calculating the tilt angles ⁇ and ⁇ ; 1 and R 14, piezoresistors R 21 and R 24, piezoresistors R 12 and R 13, and piezo resistors R 22 and R 23 are symmetrical about the center line A 1-A 1
  • the piezoresistors R11, R12, R13, and R14 constitute the full-bridge circuit C1, and the piezoresistors R21, R22, R23, and R
  • the full-bridge circuit C 2 is constituted by 24, and the inclination angle calculation unit calculates the inclination angle ⁇ based on the output voltage V o 1 of the full bridge circuit C 1, and the output voltage V o of the full bridge circuit C 2
  • the inclination angle ⁇ is calculated
  • the weight member 104 As a result, by using a gold bump having a large specific gravity as the weight member 104, it is possible to reduce the size of the weight member 104 and easily obtain compatibility with existing flip-chip mounting technology. The size and cost of the angle sensor can be reduced, and the resistance to impact can be improved. Further, even when a silicon substrate 102 having a uniform thickness is used, the inclination angles ⁇ and ⁇ in different directions can be detected by one inclination angle sensor. Further, since the bridge circuits C1 and C2 are constituted by a plurality of piezoresistors, the detection accuracy of the inclination angles ⁇ and ⁇ can be relatively improved.
  • the piezo resistors R 11, R 12, R 13, and R 14 correspond to the first piezo resistor group described in claims 23 or 26.
  • the piezoresistors R21, R22, R23 and R24 correspond to the second piezoresistor group described in claims 23 or 26, and the full bridge circuit C1
  • the range corresponds to the first full bridge circuit described in the item 23 or 26.
  • the full bridge circuit C 2 corresponds to the second full bridge circuit according to claim 23 or 26, and the inclination angle calculation unit includes the first inclination angle according to claim 23.
  • the calculation by the tilt angle calculating unit corresponds to the calculating means or the second tilt angle calculating means according to claim 23, and the first tilt angle calculating step according to claim 26, or
  • the range corresponds to the second inclination angle calculation step described in the item 26.
  • FIG. 61 is a diagram showing a first embodiment of a tilt angle sensor and a tilt angle measuring method according to the present invention.
  • FIG. 56 is a plan view showing the configuration of the tilt angle sensor according to the eleventh embodiment of the present invention.
  • piezoresistors R31, R32, R33, R34, R41 and R42 are formed on the beam portion 102c.
  • the piezoresistors R31 and R34 are arranged at positions symmetrical about the center line A1-A1.
  • the piezoresistor R41 is located on the center line A1-A1.
  • the piezoresistors R32 and R33 are arranged at symmetrical positions about the center line A1-A1, and the positions of the piezoresistors R31 and R34 and the silicon substrate 102 in the short direction are the same. It is arranged closer to the weight member 104 than the piezoresistors R31 and R34.
  • the piezoresistor R42 is disposed on the center line A1-A1, and is disposed closer to the weight member 104 than the piezoresistor R41.
  • the silicon substrate 102 can be supported in a bendable and twistable state without selectively etching the back surface of the silicon substrate 102 on which the piezoresistors R31, R32, R33, R34, R41, and R42 are formed.
  • the specific gravity of the weight member 104 can be easily increased while maintaining consistency with the existing flip chip mounting technology, and the reduction of the weight member 104 can be achieved. Therefore, the configuration and manufacturing process of the tilt angle sensor can be simplified, the size and cost of the tilt angle sensor can be reduced, and the resistance to impacts can be improved.
  • FIG. 57 (a) is a circuit diagram showing a connection configuration of the piezo resistors R31, R32, R33 and R34
  • FIG. 57 (b) is a circuit diagram showing a connection configuration of the piezo resistors R41 and R42.
  • the piezoresistors R31, R32, R33 and R constitute a full bridge circuit C3.
  • the full bridge circuit C3 one end of the piezoresistor R31 and one end of the piezoresistor R33 are connected to connect the piezoresistors R31 and R33 in series, and one end of the piezoresistor R32 and the piezoresistor R34 are connected.
  • piezoresistors R32 and R34 are connected in series.
  • the other end of the piezo resistor R 31 and the other end of the piezo resistor R 34 are connected to the positive potential side of the power supply V i, and the other end of the piezo resistor R 32 and the other end of the piezo resistor R 33 are connected to the power supply V.
  • Connected to the negative potential side of i Connected to the negative potential side of i.
  • the potential difference between one end of the piezoresistor R31 (R33) and one end of the piezoresistor R32 (R34) is defined as the output ffiVo3 of the full bridge circuit C3.
  • the piezoresistors R41 and R42 constitute a half-bridge circuit C4.
  • the piezo resistor R41 is connected to one end of the piezo resistor R, and the piezo resistors R 41 and R are connected in series.
  • the other end of the piezoresistor R41 is connected to the plus potential side of 3 ⁇ 4Vi, and the other end of the piezoresistor R42 is connected to the minus potential side of the power supply Vi.
  • the potential difference of the piezoresistor R42 is defined as the output voltage Vo4 of the half bridge circuit C4.
  • the resistance change rates of the respective piezoresistors R31, R32, R33, R34, R41 and R42] 331, 032, J333, ⁇ 34,] 341 and 342 are expressed by the following equations (24) to (29). Can be.
  • the following equations (24) to (29) can be derived in the same manner as in the tenth embodiment by using the above equations (1) to (7).
  • Vo 3 is a value proportional to sin rj
  • Vo 4_V iZ2 is a value proportional to cos (f> cos). Therefore, the inclination angle calculation unit is determined by the tenth embodiment.
  • the inclination angles ⁇ and ⁇ can be calculated in the same manner as described above.
  • FIG. 58 is a view showing dimensional conditions of the silicon substrate 102 and the piezoresistor.
  • the length of the end 102a in the longitudinal direction is 800 [ ⁇ ]
  • the length of the end 102a in the short direction is 200. [im].
  • the length of the beam 102c in the longitudinal direction is 800 [/ im]
  • the length of the beam 102c in the short direction is 200 [/ im].
  • the thickness of the silicon substrate 102 is 20 [ ⁇ ].
  • the length of the weight member 104 in the longitudinal direction (the short direction of the silicon substrate 102) is 600 [ ⁇ m ], and the length of the weight member 104 in the short direction (the longitudinal direction of the silicon substrate 102) is 50. 0 [; um], and the thickness of the weight member 104 is 30 [ ⁇ ].
  • the material of the weight member 104 is gold.
  • the piezoresistors R 31, R 41 and R 34 are arranged at a distance of 150 m] in the longitudinal direction of the silicon substrate 102 from the end 102 a, and the piezo resistors R 3 2 , 42 and 133 are arranged at a distance of 500 [/ m] in the longitudinal direction of the silicon substrate 102 from the piezoresistors R 31, R 41 and R 34. .
  • the piezoresistors R41 and R42 are located 80 [ ⁇ m] away from the piezoresistors R34 and R33 in the lateral direction of the silicon substrate 102.
  • the resistors R 31 and R 32 are arranged at a distance of 80 [Aim] in the short direction of the silicon substrate 102 from the piezo resistors R 41 and R 42.
  • each of the piezoresistors R 31, R 32, R 33, R 34, R 41 and R 42 are 50 [/ im], 1 0 [/ im], 10 18 [cm 3 ] and 0.45 [/ xm].
  • FIG. 59 (a) is a circuit diagram showing a connection configuration of the piezo resistors R31, R32, R33 and R34
  • FIG. 59 (b) is a piezo resistor R41 and R34
  • FIG. 4 is a circuit diagram showing a connection configuration of 42.
  • connection structure is the same as in FIG. However, 3 ⁇ 43 ⁇ 43 ⁇ 43 ⁇ 4 ⁇ i was set to 5 [V] for both the full-bridge circuits C 3 and C 4.
  • Figure 60 (a) is a graph showing the change in output 3 ⁇ 4J3E V o 3 when the inclination angle ⁇ is changed while keeping the inclination angle ⁇ constant.
  • Figure 60 (b) is a graph showing that the inclination angle ⁇ is constant.
  • 11 is a graph showing a change in the output ⁇ o 3 when the inclination angle ⁇ is changed in the following manner.
  • Figure 6 1 (a) is a graph showing the change in output 3 ⁇ 41 ⁇ V o 4 when the inclination angle ⁇ is changed while keeping the inclination angle ⁇ constant.
  • a silicon substrate 102 having a piezoresistor formed on the surface, a support member 101 b supporting the silicon substrate 102 at one end of the silicon substrate 102, A weight member 104 disposed at an end 102 b of the silicon substrate 102, and a tilt angle calculation unit for calculating the tilt angles ⁇ and ⁇ are provided, and piezo resistors R 31 and R 34, and Piezoresistors R32 and R33 are placed in line symmetry about centerline A1—A1, and piezoresistors R41 and R42 are placed on centerline A1—A1.
  • the piezoresistors R31, R32, R33 and R34 form a full bridge circuit C3, and the piezoresistors R41 and R42 form a half bridge circuit C4.
  • the inclination angle calculator calculates the inclination angle ⁇ based on the output voltage V o 3 of the full bridge circuit C 3, and outputs the output of the half bridge circuit C 4 And calculates the inclination angle ⁇ on the basis of the pressure V o 4 and the calculated angle of inclination eta.
  • the weight member 104 As a result, by using a gold bump having a large specific gravity as the weight member 104, it becomes possible to easily match the existing flip chip mounting technology while reducing the size of the weight member 104, This makes it possible to reduce the size and cost of the tilt angle sensor and also improve the resistance to impact. Further, even when the silicon substrate 102 having a uniform thickness is used, the inclination angles ⁇ and ⁇ ⁇ ⁇ in different directions can be detected by one inclination angle sensor. Further, since the bridge circuits C3 and C4 are configured by a plurality of piezoresistors, the detection accuracy of the inclination angles ⁇ and ⁇ can be relatively improved. Further, the number of piezoresistors necessary for detection can be reduced as compared with the tenth embodiment.
  • the piezoresistors R31, R32, R33 and R34 correspond to the first piezoresistor group described in claims 24 or 27.
  • the piezoresistors R41 and R42 correspond to the second piezoresistor group described in claims 24 or 27, and the full bridge circuit C3 corresponds to the claims 24th or 2nd. It corresponds to the first full bridge circuit described in paragraph 7.
  • the half-bridge circuit C 4 corresponds to the second half-bridge circuit described in claims 24 or 27, and the inclination angle calculation unit includes a first inclination angle described in claims 24.
  • FIG. 62 or FIG. 69 is a diagram showing a tilt angle sensor and a tilt angle measuring method according to a 12th embodiment of the present invention.
  • FIG. 62 is a plan view showing a configuration of the tilt angle sensor according to the 12th embodiment of the present invention.
  • piezoresistors R51, R52, R53 and R54 are formed on the beam 102c.
  • the piezoresistors R51 and R54 are arranged at positions symmetrical about the center line A1-A1.
  • the piezoresistors R52 and R53 are arranged at positions symmetrical with respect to the center line A1—A1, and the piezoresistors R51 and R54 and the short side of the silicon substrate 102 are arranged.
  • the positions in the hand direction are the same, and they are arranged closer to the weight member 104 than the piezoresistors R51 and R54.
  • the silicon can be bent and twisted without selectively etching the back surface of the silicon substrate 102 on which the piezoresistors R51, R52, R53, and R54 are formed. It is possible to support the substrate 102 and easily increase the specific gravity of the weight member 104 while maintaining consistency with the existing flip-chip mounting technology to reduce the weight member 104 Can be achieved. Therefore, the configuration and the manufacturing process of the tilt angle sensor can be simplified, the size and cost of the tilt angle sensor can be reduced, and the resistance to impact can be improved.
  • FIG. 63 (a) is a circuit diagram showing a connection configuration of the piezo resistors R51, R52, R53 and R54
  • FIG. 63 (b) is a circuit diagram showing another configuration of the piezo resistors R51, R52, R53 and R54
  • FIG. 3 is a circuit diagram illustrating a connection configuration.
  • piezoresistors R51, R52, 13 ⁇ 453 and 13 ⁇ 454 form a full bridge circuit C5.
  • the full bridge circuit C5 one end of the piezoresistor R51 and one end of the piezoresistor R53 are connected to connect the piezoresistors R51 and R53 in series, and one end of the piezoresistor R52 and the piezoresistor R54 are connected. One end is connected, and the piezoresistors R52 and R54 are connected in series.
  • the other end of the piezo resistor R 51 and the other end of the piezo resistor R 54 are connected to the positive potential side of the power supply V i, and the other end of the piezo resistor R 52 and the other end of the piezo resistor R 53 are connected to the power supply V. Connected to the negative potential side of i.
  • the potential difference between one end of the piezo resistor R 51 (R 53) and one end of the piezo resistor R 52 (R 54) is defined as the output ffVo 5 of the full bridge circuit C 5.
  • the piezoresistors R51, R52, and the shaku 53! ⁇ 54 constitute a full bridge circuit C6 which is different in connection from the full bridge circuit C5.
  • the full bridge circuit C6 one end of the piezoresistor R51 and one end of the piezoresistor R53 are connected to connect the piezoresistors R51 and R53 in series, and one end of the piezoresistor R52 and one end of the piezoresistor R54. And piezoresistors R52 and R54 are connected in series.
  • the other end of the piezo resistor R 51 and the other end of the piezo resistor R 52 are connected to the positive potential side of the power supply V i, and the other end of the piezo resistor R 53 and the other end of the piezo resistor R 54 are connected to the minus of the power supply V i. Connected to the potential side.
  • the potential difference between one end of the piezo resistor R 51 (R 53) and one end of the piezo resistor R 52 (R 54) is defined as the output voltage Vo 6 of the full bridge circuit C 6.
  • the full bridge circuit C6 is configured by switching the connection of the full bridge circuit C5 by switching or the like.
  • 351, ⁇ 52, / 353 and] 354 of the respective piezoresistors R51, R52, R53 and R54 can be expressed by the following equations (34) to (37).
  • the following equations (34) to (37) can be derived in the same manner as in the tenth embodiment by using the above equations (1) to (7).
  • E5 and E6 can be expressed by the following equations (40) and (41).
  • the inclination angle calculation unit can calculate the inclination angle ⁇ in the same manner as in the tenth embodiment.
  • FIG. 64 is a diagram showing dimensional conditions of the silicon substrate 102 and the piezoresistor.
  • the length in the longitudinal direction of the end portion 102a (the short direction of the silicon base fe 102) is 800 [/ im]
  • the length in the short direction of the end portion 102a (the longitudinal direction of the silicon substrate 102). Is 200 [/ itn].
  • the length of the beam 102c in the longitudinal direction (longitudinal direction of the silicon substrate 102) is 800 [/ m]
  • the length of the beam 102c in the short direction (short direction of the silicon substrate 102) is 200 [/ im].
  • the thickness of the silicon substrate 102 is 20 [ ⁇ ].
  • the length of the weight member 104 in the longitudinal direction is 600 [ ⁇ m]
  • the length of the weight member 104 in the short direction is 500 [/ im].
  • the thickness of the weight member 104 is 30 [ ⁇ ].
  • the material of the weight member 104 is gold.
  • the piezoresistors R51 and R54 are arranged at a distance of 50 [ ⁇ ] in the longitudinal direction of the silicon substrate 102 from the end 102a, and the piezoresistors R52 and R53 are connected to the piezoresistors R51 and R53. It is arranged at a distance of 200 [/ im] in the longitudinal direction of the silicon substrate 102 from the R 54 force. Further, the piezoresistors R51 and R52 are arranged at positions 160 [ ⁇ ] apart from the piezoresistors R53 and R54 in the lateral direction of the silicon substrate 102.
  • each piezoresistor R51, R52, R53 and R54 are 50 [/ im], 10 [/ im], 10 18 [cm 3 ] and 0.45 [/ zm].
  • Fig. 65 (a) is a circuit diagram showing the connection configuration of the piezo resistors R51, R52, R53 and R54
  • Fig. 65 (b) is the circuit diagram of the piezo resistors R51, R52, R53 and R54.
  • FIG. 9 is a circuit diagram illustrating another connection configuration.
  • connection structure is the same as in FIG. However, source 3EVi was set to 5 [V] for both full-bridge circuits C5 and C6.
  • Fig. 66 (a) shows the output when the tilt angle ⁇ is changed while the tilt angle ⁇ is constant.
  • FIG. 66 (b) is a graph showing the change in the output SffVo5 when the oblique angle ⁇ is changed while the oblique angle is kept constant while the oblique angle is kept constant.
  • Fig. 67 (a) is a rough graph showing the change of the output Sff Vo 6 when the inclination angle ⁇ is changed while keeping the inclination angle ⁇ constant
  • Fig. 67 (b) shows the inclination with the inclination angle ⁇ constant
  • 6 is a graph showing a change in output o 6 when the angle ⁇ is changed.
  • FIG. 68 (a) is a graph showing the change of the output voltage V o 5 for each material when the tilt angle ⁇ is fixed and the tilt angle ⁇ is changed when the material of the weight member 104 is changed.
  • Fig. 68 (b) shows the variation of the output 3 ⁇ 4 £ V o5 when the material of the weight member 104 was changed and the tilt angle ⁇ was changed while the tilt angle ⁇ was constant. It is a graph shown for each material.
  • the output miiv o 5 is almost proportional to s i ⁇ ⁇ as shown in FIG.
  • the weight member 104 is not provided, there is almost no change.
  • the weight member 104 is made of Si, the deformation is slightly larger than when the weight member 104 is not provided.
  • the weight member 104 is formed of solder (Sn 63%, Pb 37%), the change is slightly larger than that of the weight member 104 formed of Si.
  • the weight member 104 is made of Au, the change is slightly larger than when the weight member 104 is made of solder.
  • FIG. 66A shows a case where the weight member 104 is made of Au.
  • FIG. 69 (a) shows the change in the output voltage Vo 6 for each material when the inclination angle ⁇ is fixed and the inclination angle ⁇ is changed when the material of the weight member 104 is changed.
  • FIG. 69 (b) is a graph showing changes in output mj £ Vo 6 when the inclination angle ⁇ is kept constant and the inclination angle ⁇ is varied when the material of the weight member 104 is varied. It is a graph shown for each material.
  • FIG. 69 (a) shows a case where the weight member 104 is made of Au.
  • the silicon substrate 102 having the piezoresistor formed on the surface, the support member 101b supporting the silicon substrate 102 at one end of the silicon substrate 102, and the end 102b of the silicon substrate 102
  • a tilt angle calculator for calculating the tilt angle ⁇ , the piezo resistors R 51 and R 54, and the piezo resistors R 52 and R 53, and the center line A 1 — A 1 It is arranged at a line symmetrical position as an axis, and a full-bridge circuit C5 is composed of piezoresistors R51, R52, R53, and R54, and a full-bridge circuit C5 is composed of piezoresistors R51, R52, R53, and R54.
  • the inclination angle calculation unit calculates an inclination angle ⁇ based on the output voltage Vo 3 of the full bridge circuit C 3, and outputs the output voltage Vo 4 of the half-bridge circuit C 4 and Based on the calculated inclination angle ⁇ Then, the inclination angle ⁇ is calculated.
  • the weight member 104 As a result, by using a gold bump having a large specific gravity as the weight member 104, it is possible to reduce the size of the weight member 104 and easily obtain compatibility with the existing flip-chip mounting technology. 'The cost can be reduced and the impact resistance can be improved. Also, thickness Even when a silicon substrate 102 having a uniform inclination angle is used, inclination angles ⁇ and ⁇ in different directions can be detected by one inclination angle sensor. Further, since the bridge circuits C5 and C6 are constituted by a plurality of piezoresistors, the detection accuracy of the inclination angles ⁇ and ⁇ can be relatively improved. Further, the number of piezoresistors necessary for detection can be reduced as compared with the tenth embodiment. Further, since the offset is not included in the output voltage V o6, the detection accuracy of the inclination angles ⁇ and ⁇ can be improved as compared with the first embodiment.
  • the piezoresistors R 51, R 52, R 53 and R 54 correspond to the first piezoresistor group described in claims 25 or 28.
  • the full-bridge circuit C5 corresponds to the first full-bridge circuit described in claims 25 or 28, and the full-bridge circuit C6 corresponds to the claims 25 or 28.
  • the second full bridge circuit is supported.
  • the inclination angle calculation unit corresponds to the first inclination angle calculation unit described in claim 25 or the second inclination angle calculation unit described in claim 25.
  • the calculation according to the above corresponds to the first inclination angle calculation step described in claim 28 or the second inclination angle calculation step described in claim 28.
  • FIG. 70 is a diagram showing a thirteenth embodiment of the azimuth sensor according to the present invention.
  • FIG. 70 is a block diagram showing the configuration of the azimuth sensor according to the present invention.
  • the azimuth sensors include a three-axis magnetic sensor 101, a magnetic sensor drive power supply unit 102, a chopper unit 103, a magnetic sensor amplifier unit 104, and a magnetic sensor A / D conversion unit 1.
  • Sensitivity 'offset correction unit 106, tilt angle sensor 107, tilt sensor amplifier unit 108, tilt angle sensor AZD conversion unit 109, tilt correction unit 110, and azimuth angle calculation unit 1 1 1 is provided.
  • the three-axis magnetic sensor 101 has an X-axis geomagnetic sensor HE ⁇ ⁇ ⁇ that detects the geomagnetic component in the X-axis direction with the vertical direction of the azimuth sensor as the X-axis, and the y-axis with the horizontal direction of the azimuth sensor as the y-axis.
  • Y-axis geomagnetic sensor HE that detects the geomagnetic component in the direction z
  • z-axis geomagnetic sensor HE that detects the geomagnetic component in the Z- axis direction with the thickness direction of the y and azimuth sensors as the z-axis z is provided.
  • the chopper section 103 switches terminals for driving the X-axis geomagnetic sensor HEx, the y-axis geomagnetic sensor HEy, and the z-axis geomagnetic sensor HEz, respectively.
  • the output drive voltage is applied to the X-axis geomagnetic sensor HE x, the y-axis geomagnetic sensor HE y, and the z-axis geomagnetic sensor HE z, respectively, and the X-axis geomagnetic sensor HEX, the y-axis geomagnetic sensor HE y, and the z-axis geomagnetic sensor
  • the sensor signal output from the HEz is output to the magnetic sensor amplifier 104 in a time-division manner.
  • the magnetic sensor A / D conversion unit 105 converts the sensor signals from the X-axis geomagnetic sensor HE x, the y-axis geomagnetic sensor HE y and the z-axis geomagnetic sensor HE z from analog to digital, and converts the converted digital data, respectively.
  • the data are output to the sensitivity / offset correction unit 106 as X-axis geomagnetic data, y-axis geomagnetic data, and z-axis geomagnetic data.
  • the sensitivity / offset correction unit 106 is based on the X-axis geomagnetic measurement data, y-axis geomagnetism measurement data, and z-axis geomagnetism measurement data from the magnetic sensor A / D conversion unit 105.
  • the offset and sensitivity correction coefficient of HEz are calculated, and the X-axis geomagnetic measurement data, y-axis geomagnetism measurement data, and z-axis geomagnetism measurement data are corrected based on the calculated offset and sensitivity correction coefficient.
  • the tilt angle sensor 107 detects a tilt angle ⁇ with the X axis as the rotation axis and a tilt angle ⁇ with the y axis as the rotation axis, and outputs the output sensor signal to the tilt angle sensor amplifier 108. I'm going to do it.
  • the tilt angle sensor A / D converter 109 receives the sensor signal from the tilt angle sensor 107.
  • the digital data obtained by the AZD conversion is output to the tilt correction unit 110 as tilt angle ⁇ measurement data and tilt angle ⁇ measurement data.
  • the tilt compensator 110 detects the X-axis geomagnetism from the offset compensator 106 based on the tilt angle ⁇ measurement data and the tilt angle ⁇ measurement data from the tilt angle sensor AZD converter 109.
  • the data, y-axis geomagnetism measurement data and z-axis geomagnetism measurement data are corrected.
  • the azimuth calculation unit 111 calculates the azimuth based on the X-axis geomagnetic measurement data, the y-axis geomagnetism measurement data, and the Z- axis geomagnetism measurement data from the tilt correction unit 110. .
  • the geomagnetic component in the X-axis direction, the geomagnetic component in the y-axis direction, and the geomagnetic component in the z-axis direction correspond to the geomagnetic component described in claim 29
  • the magnetic sensor 101 corresponds to the terrestrial magnetism detecting means described in claim 29, and the X-axis terrestrial magnetism measurement data, the y-axis terrestrial magnetism measurement data, and the ⁇ -axis air magnetism measurement data are described in claim 29.
  • the tilt angle sensor 107 corresponds to the tilt angle sensor according to claim 29, and the tilt angle ⁇ measurement data and the tilt angle ⁇ measurement data correspond to
  • the tilt correction unit 110 and the azimuth calculation unit 111 correspond to the azimuth angle data described in the twentieth range.
  • a mobile phone according to the present invention has the azimuth sensor according to the thirteenth embodiment built into a mobile phone.
  • the method of forming a piezo resistor on a silicon substrate has been described.
  • a Ge substrate or an InSb substrate may be used. ,.
  • the tilt angle sensor is, for example, a motion sensor such as an electronic pet, a robot, or a game controller, or a screen operation device based on the tilt of a portable terminal such as a game machine. It can be used for navigation systems for portable terminals, and for monitoring devices such as tilt, vibration, and vibration.
  • the tilt angle sensor Although described, it may be applied to an acceleration sensor.
  • a solder bump has been described as an example of a metal weight member, but a gold bump may be used.
  • the uniaxial tilt angle sensor has been described as an example.
  • the present invention may be applied to a biaxial tilt angle sensor.
  • the force with the direction of the piezoresistors R11, R12, R13, and R14 being the longitudinal direction of the silicon substrate 102 is not limited thereto. If they are the same, the directions may be the short direction of the silicon substrate 102.
  • FIG. 71 is a diagram showing an arrangement of the piezoresistors R11, R12, R13 and R14.
  • the piezoresistors R11 and R14 are arranged in the longitudinal direction of the silicon substrate 102, and the piezoresistors R12 and R13 are oriented in the lateral direction of the silicon substrate 102. It is arranged.
  • the piezoresistors R11, R12, R13 and R14 are all arranged in the short direction of the silicon substrate 102.
  • the directions of the piezoresistors R21, R22, R23 and R24 are set to the longitudinal direction of the silicon substrate 102.
  • the present invention is not limited to this. If they are the same, they may be regarded as the short direction of the silicon substrate 102.
  • FIG. 72 is a diagram showing an arrangement of the piezoresistors R21, R22, R23 and R24.
  • the piezoresistors R21 and R24 are arranged in the longitudinal direction of the silicon substrate 102, and the piezoresistors R22 and R23 are oriented in the lateral direction of the silicon substrate 102. It is arranged.
  • the piezoresistors R21, R22, R23 and R24 are all arranged in the lateral direction of the silicon substrate 102.
  • the direction of the piezoresistors R31, R32, R33, and R34 is set to the longitudinal direction of the silicon substrate 102, but is not limited thereto. If the directions of the piezoresistors forming the pair are the same, the directions may be regarded as the lateral directions of the silicon substrate 102.
  • FIG. 73 is a diagram showing the arrangement of the piezoresistors R31, R32, R33 and R34.
  • the piezoresistors R31 and R34 are arranged in the longitudinal direction of the silicon substrate 102, and the piezoresistors R32 and R33 are oriented in the short direction of the silicon substrate 102. It is arranged.
  • the piezoresistors R31, R32, R33 and R34 are all arranged in the short direction of the silicon substrate 102.
  • the directions of the piezoresistors R41 and R42 are set to the longitudinal direction of the silicon substrate 102.
  • the present invention is not limited to this, and the directions of the piezoresistors forming the pair are the same.
  • those directions may be regarded as short sides of the silicon substrate 102.
  • FIG. 74 is a diagram showing an arrangement of the piezoresistors R41 and R42.
  • the piezoresistors R41 and R42 are both arranged in the short direction of the silicon substrate 102.
  • the force in which the directions of the piezoresistors R51, R52, R53 and R54 are set in the longitudinal direction of the silicon substrate 102 is not limited thereto. If so, those directions may be regarded as the short sides of the silicon substrate 102.
  • FIG. 75 is a diagram showing an arrangement of the piezoresistors R51, R52, R53 and R54.
  • the piezoresistors R51, R52, R53 and R54 are all arranged in the short direction of the silicon substrate 102.
  • the piezoresistors R51 and R54 are arranged in the longitudinal direction of the silicon substrate 102, and the piezoresistors R52 and R53 are oriented in the short direction of the silicon substrate 102. It is arranged.
  • Industrial applicability As described above, according to the method for manufacturing an inclination angle sensor according to claims 1 to 10 or the inclination angle sensor according to claims 11 to 16 according to the present invention, It is not necessary to perform selective etching using photolithography technology in order to form the displacement part, which simplifies the configuration and manufacturing process of the tilt angle sensor and reduces the cost of the tilt angle sensor. At the same time, the effect that the resistance to impact can be improved can be obtained.
  • the tilt angle sensor according to claims 17 to 19 of the present invention or the method of manufacturing the tilt angle sensor according to claims 20 to 22 In order to form the portion, it is not necessary to selectively etch the back surface of the substrate.
  • a metal bump having a large specific gravity as a weight member it is possible to reduce the size of the weight member and easily achieve compatibility with existing flip chip mounting technology. Therefore, it is possible to reduce the size and cost of the tilt angle sensor and to improve the impact resistance.
  • the tilt angle sensor according to claim 23 of the present invention it is not necessary to selectively etch the back surface of the substrate in order to form the displacement portion.
  • a metal bump having a large specific gravity as a weight member, it is possible to reduce the size of the weight member and easily achieve compatibility with existing flip chip mounting technology. Therefore, it is possible to reduce the size and cost of the tilt angle sensor, and to improve the impact resistance.
  • the ridge circuit is constituted by a plurality of piezoresistors, an effect that the accuracy of detecting the tilt angle of the two axes can be relatively improved can be obtained.
  • the tilt angle sensor according to claim 24 of the present invention it is not necessary to selectively etch the back surface of the substrate in order to form the displacement portion.
  • a metal bump having a large specific gravity as a weight member, it is possible to reduce the size of the weight member and easily achieve compatibility with existing flip chip mounting technology. Therefore, if it becomes possible to reduce the size and cost of the tilt angle sensor, In both cases, the effect that the resistance to impact can be improved can be obtained.
  • the bridge circuit is formed by a plurality of piezo resistors, the effect of relatively improving the detection accuracy of the two-axis tilt angle can be obtained.
  • the tilt angle sensor according to claim 25 of the present invention it is not necessary to selectively etch the back surface of the substrate in order to form the displacement portion.
  • a metal bump having a large specific gravity as the weight member, it is possible to easily match the existing flip chip mounting technology while reducing the size of the weight member. Therefore, it is possible to reduce the size and cost of the tilt angle sensor and to improve the impact resistance.
  • the effect that the tilt angle of two axes can be detected by one tilt angle sensor can be obtained.
  • the bridge circuit is formed by a plurality of piezo resistors, the effect of relatively improving the detection accuracy of the two-axis tilt angle can be obtained.
  • the azimuth sensor according to claim 29 of the present invention, according to claims 1 to 10, claim 17 to 19, or claim
  • the azimuth sensor can be prevented from being placed on a horizontal surface while suppressing a large size and cost increase of the azimuth sensor.
  • the azimuth can be measured relatively accurately.
  • the use of the azimuth angle sensor described in claim 29 suppresses a large-sized mobile phone and cost reduction. While keeping the mobile phone level, The azimuth can be measured relatively accurately as it is.

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Abstract

L'invention concerne un capteur d'inclinaison capable de mesurer l'inclinaison à l'aide d'un effet piézo-électrique sans graver de manière sélective un substrat dans lequel sont formées des piézorésistances. Dans ce capteur, la surface arrière du substrat de silicium (1) dans laquelle sont formées des piézorésistances (R1) à (R4) est uniformément meulée jusqu'à une épaisseur déformable, les deux extrémités du substrat de silicium (1) sont supportées par un élément de support (2), et un élément poids (3) est placé au centre du substrat de silicium (1) à travers une partie en saillie (3a).
PCT/JP2003/004235 2002-04-02 2003-04-02 Capteur d'inclinaison, procede de fabrication de ce capteur d'inclinaison et procede permettant de mesurer l'inclinaison WO2003087719A1 (fr)

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AU2003236348A AU2003236348A1 (en) 2002-04-02 2003-04-02 Inclination sensor, method of manufacturing inclination sensor, and method of measuring inclination
EP03746166A EP1491854A4 (fr) 2002-04-02 2003-04-02 Capteur d'inclinaison, procede de fabrication de ce capteur d'inclinaison et procede permettant de mesurer l'inclinaison
JP2003584621A JPWO2003087719A1 (ja) 2002-04-02 2003-04-02 傾斜角センサ、並びに傾斜角センサの製造方法および傾斜角測定方法
US10/509,873 US20050151448A1 (en) 2002-04-02 2003-04-02 Inclination sensor, method of manufacturing inclination sensor, and method of measuring inclination

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JPWO2003087719A1 (ja) 2005-08-18
US20050151448A1 (en) 2005-07-14
EP1491854A4 (fr) 2006-11-02
EP1491854A1 (fr) 2004-12-29

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