WO2003031320A1 - Element structurel en film mince, procede de fabrication dudit element et element de commutation utilisant cet element - Google Patents

Element structurel en film mince, procede de fabrication dudit element et element de commutation utilisant cet element Download PDF

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Publication number
WO2003031320A1
WO2003031320A1 PCT/JP2002/009680 JP0209680W WO03031320A1 WO 2003031320 A1 WO2003031320 A1 WO 2003031320A1 JP 0209680 W JP0209680 W JP 0209680W WO 03031320 A1 WO03031320 A1 WO 03031320A1
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WO
WIPO (PCT)
Prior art keywords
thin film
structural member
thin
film structural
switching element
Prior art date
Application number
PCT/JP2002/009680
Other languages
English (en)
Japanese (ja)
Inventor
Nobuyuki Ishiwata
Shinsaku Saito
Hiroaki Honjo
Tamaki Toba
Keishi Ohashi
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Publication of WO2003031320A1 publication Critical patent/WO2003031320A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12104—Mirror; Reflectors or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/35—Optical coupling means having switching means
    • G02B6/3564—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details
    • G02B6/3568—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details characterised by the actuating force
    • G02B6/357—Electrostatic force
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/35—Optical coupling means having switching means
    • G02B6/3564—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details
    • G02B6/3584—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details constructional details of an associated actuator having a MEMS construction, i.e. constructed using semiconductor technology such as etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/50—Means for increasing contact pressure, preventing vibration of contacts, holding contacts together after engagement, or biasing contacts to the open position
    • H01H1/54—Means for increasing contact pressure, preventing vibration of contacts, holding contacts together after engagement, or biasing contacts to the open position by magnetic force
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H01H2059/0054—Rocking contacts or actuating members

Definitions

  • the present invention relates to a thin-film structural member in which occurrence of warpage or the like is suppressed, a method of manufacturing the same, and a switching element using the same.
  • the switching element turns on / off signals of a wide frequency range from DC to gigahertz or more.
  • the present invention relates to a microselect port-to-mechanical system (MEMS) switch applicable to wavelength-convertible semiconductor lasers, optical filters, optical switches, and the like.
  • MEMS microselect port-to-mechanical system
  • the MEMS switch includes, for example, a fixed structure and a movable structure, and the movable structure has a support member and a movable member, and the movable member is connected to the support member by a spring member.
  • the MEMS switch configured as described above includes a switch that performs a switching operation when the movable member is moved by an attractive force or a repulsive force acting between the fixed structure and the movable member, and a switch that performs a switching operation. It has been proposed to be applied to optical switches and the like, which consist of a movable member and a movable member whose surface reflects light. For example, “US Pat. No. 6,044,705, US Pat. No. 5,969,465, US Pat. No. 5,960,132, US Pat. 6,201,629, US Pat. Among these, the prior art will be described using the example of the invention described in “USP 6 201 629” as an example.
  • FIG. 10a is a plan view of the MEMS switch disclosed in “US Pat. No. 6,020,629”, and FIG. 10b is a cross-sectional view.
  • a support 102 is provided on a base 101.
  • a mirror 104 is arranged on the support 102 via a hinge spring 103.
  • the conventional MEM switch was configured as shown above.
  • FIG. 2 there is a problem that the hinge spring 103 and the mirror 104 are warped. When such warpage occurs, it becomes difficult to control the torsion angle of the hinge panel 103, and a fatal obstacle occurs in which light reflected by the mirror 104 is scattered.
  • the above-mentioned warpage is caused by using a hinge panel 103 composed of one plane as shown in FIG. 13 and a mirror 104 composed of one plane as shown in FIG. That is. Since it is composed of one plane, it is easily bent by external force.
  • the warpage is caused by the internal stress of the thin film, which is generated when a MEMS device is manufactured using a thin film manufacturing process.
  • the internal stress of the thin film is compressive
  • the movable parts that are formed on the sacrificial layer, here the hinge panel 103 and the mirror 104 expand after the sacrificial layer is removed.
  • the deformation shown in FIGS. 11 and 12 is likely to occur.
  • the hinge panel 103 and the mirror 104 are extended by thermal expansion due to a rise in the temperature of the element, so that warpage occurs.
  • the electromagnetic force is used as the force for operating the movable portion, the above-described warpage occurs.
  • the electromagnetic force is about three times stronger than the electrostatic force, and both the attractive force and the repulsive force can be increased.
  • the hinge panel is not only twisted, but is also easily attracted by the electromagnetic force and easily warps.
  • the present invention has been made to solve the above problems, and an object of the present invention is to suppress the occurrence of warpage in a movable portion such as a hinge, a spring, and a mirror, and to realize a highly reliable switching operation. And
  • a thin film structural member is formed of a thin film including one or more surfaces and another one or more surfaces continuous with the surfaces at a predetermined angle. According to this thin-film structural member, there is a surface provided at an angle different from that of one surface in a direction in which one surface warps.
  • the surface is, for example, a flat surface or a curved surface.
  • the predetermined angle may be approximately 90 °.
  • Ma The thin film structural member functions as a torsion spring. Further, the thin film structural member may be provided with a reflecting surface that reflects light.
  • the thin film is formed by any one of a vapor phase growth method and a liquid phase growth method
  • the vapor phase growth method includes a sputtering method, a vacuum evaporation method, and a chemical vapor deposition method. Any of the growth methods may be used, and the liquid phase growth method may be a plating method.
  • a method of manufacturing a thin film structural member comprising: forming a sacrificial layer having a concave portion formed of at least one other surface continuous at a predetermined angle with respect to a main surface on a fixed structure.
  • the method comprises the steps of: This is to form a thin film structural member composed of a thin film having one or more other surfaces continuous at an angle.
  • a switching element is a switching element including a fixed structure and a movable structure disposed thereon, and includes a support member disposed on the movable structure, and a spring mounted on the support member.
  • a movable member connected by a member, and driving means formed on the fixed structure to apply a predetermined force to the movable member, wherein the spring member has at least one surface and a predetermined angle with the surface.
  • It is a thin film structural member composed of a thin film consisting of at least one other surface and a continuous force.
  • the spring member supporting the movable portion has a structure in which one surface is provided at a different angle from the other surface in a direction in which one surface is warped.
  • the predetermined angle may be approximately 90 °.
  • the driving means is, for example, an electromagnet for applying a magnetic force to the movable part.
  • a switching element is a switching element including a fixed structure and a movable structure disposed thereon, wherein the support element is disposed on the movable structure, A movable member connected to the movable member by a spring member, and a driving means formed on the fixed structure to apply a predetermined force to the movable member.
  • the movable member has a flat reflecting surface for reflecting light. And a thin-film structural member comprising the reflecting surface and at least one other surface continuous at a predetermined angle.
  • the movable portion is connected to the reflecting surface in a direction in which the reflecting surface is warped. Has a structure in which surfaces provided at different angles exist.
  • the predetermined angle may be approximately 90 °.
  • the driving means is, for example, an electromagnet for applying a magnetic force to the movable part.
  • FIG. 1A is a plan view showing a configuration example of the switching element according to the embodiment of the present invention.
  • FIG. 1B is a sectional view showing a configuration example of the switching element according to the embodiment of the present invention.
  • FIG. 2a to 2e are perspective views schematically showing configuration examples of the spring portions 3c, 3c. 3a to 3j are process diagrams showing a process for manufacturing the switching element of FIG. 4a to 4f are process diagrams showing a manufacturing process of the switching element of FIG. 1 subsequent to FIG. 3j.
  • FIG. 5A is a plan view showing a configuration example of a switching element according to another embodiment of the present invention.
  • FIG. 5B is a cross-sectional view showing a configuration example of a switching element according to another embodiment of the present invention.
  • FIG. 6A is a plan view showing a configuration example of a switching element according to another embodiment of the present invention.
  • FIG. 6B is a cross-sectional view illustrating a configuration example of a switching element according to another embodiment of the present invention.
  • FIG. 7 is a perspective view schematically showing a configuration example of the movable section 3a.
  • FIG. 8 is a process diagram showing a manufacturing process of the movable part 3a.
  • FIG. 9 is a plan view a and a cross-sectional view b showing a configuration example of a switching element according to another embodiment of the present invention.
  • FIG. 10a is a plan view showing a configuration example of a conventional switching element.
  • FIG. 10b is a cross-sectional view showing a configuration example of a conventional switching element.
  • FIG. 11 is a cross-sectional view for explaining a problem of a conventional switching element.
  • FIG. 12 is a cross-sectional view for explaining a problem of a conventional switch element.
  • FIG. 13 is a perspective view illustrating the configuration of a hinge panel of a conventional switch element.
  • FIG. 14 is a perspective view illustrating the configuration of a conventional switch element mirror. Detailed description of the embodiment
  • FIG. 1A is a plan view showing a configuration example of a switching element according to the first embodiment of the present invention
  • FIG. 1B is a sectional view.
  • This switching element includes lower magnetic yokes 2a and 2a 'on a substrate la, and further includes thin-film coils 2c and 2c' and upper magnetic yokes 2b and 2b '.
  • the upper magnetic yokes 2b, 2b ' pass through the center of the windings of the thin-film coils 2c, 2c'.
  • the upper magnetic yokes 2b, 2b 'and the lower magnetic yokes 2a, 2a' are magnetically connected.
  • the magnetic yoke When a current flows through the thin-film coils 2c and 2c ', the magnetic yoke is magnetized, and N (S) and S (N) magnetic poles are formed, for example, above the upper magnetic yokes 2b and 2b'.
  • the thin-film electromagnet composed of the lower magnetic yokes 2a, 2a, the thin-film coils 2c, 2c 'and the upper magnetic yokes 2b, 2b' forms a protective layer 1b on the substrate 1a.
  • the upper magnetic yokes 2 b and 2 b ′ which are flattened by the magnetic poles and are exposed on the flat surface of the protective layer lb, constitute the base 1.
  • the switching element shown in FIGS. La and 1b includes a movable portion 3a provided with electrical contacts 4, 4, and electrical contacts 5, 5 'disposed on the base 1, and a movable portion 3a.
  • a movable portion 3a provided with electrical contacts 4, 4, and electrical contacts 5, 5 'disposed on the base 1, and a movable portion 3a.
  • the spring portions 3 c and 3 c ′ are, as shown in FIG. 2 a, one or more planes and another one or more planes continuous with this plane at an angle of about 90 °, for example.
  • a thin film structural member made of In addition, two adjacent flats The angle of the plane is not limited to 90 °.
  • the spring portions 3c and 3c ' By using the spring portions 3c and 3c 'having such a structure, the bending of the spring portion as shown in FIG. 11 is suppressed.
  • the structure of the spring portions 3c and 3c ' is effective not only in the structure shown in Fig. 2a but also in the structures shown in Figs. 2b, 2c, 2d and 2e.
  • the movable portion 3a is supported by the support portions 3b, 3b 'from both sides of the central portion via the spring portions 3c, 3c', and the fulcrum is set at the contact point with the spring portions 3c, 3c '. And extends to both sides of the fulcrum.
  • Electric contacts 5, 5 ' are arranged at the end of the movable portion 3a, and electric contacts 4, 4' facing the electric contacts 5, 5 'of the movable portion are arranged on the base 1.
  • the electrical contacts 4, 4 are arranged via the insulating layers 6, 6 ', the insulating layers 6, 6' may be provided as needed.
  • the movable portion 3a When the movable portion 3a is made of a magnetic material, an electromagnetic force acts between the end of the movable portion 3a and the upper surfaces of the upper magnetic yokes 2b and 2b ', which are the magnetic poles of the thin-film electromagnet.
  • a soft magnetic material As the magnetic material of the movable portion 3a, a soft magnetic material can be used. Soft magnetic materials include Ni-Fe alloys, Co-Ni-Fe alloys, Fe microcrystalline alloys such as Fe_Ta_N, Co- amorphous alloys such as Co-Ta-Zr, Soft iron is suitable.
  • Magnetic materials that easily form remanent magnetization include Co—Cr—Pt alloys, Co—Cr—Ta alloys, Sm—Co alloys, Nd—Fe—B alloys, and Fe A1—Ni—Co alloy, Fe—Cr—Co alloy, Co—Fe—V alloy, Cu—Ni—Fe alloy, etc. are suitable.
  • the movable portion 3a When the movable portion 3a is made of a magnetic material that easily forms remanent magnetization, the movable portion 3a is magnetized in the left and right directions in FIGS. La and 1b.
  • the left side has an N pole and the right side has an S pole.
  • the thin-film electromagnet is operated such that the surfaces of the left and right upper magnetic yokes 2b, 2b 'are simultaneously N-pole or S-pole. This allows, for example, When the N pole is used, the attractive force is applied between the thin film electromagnet on the right side and the right side of the movable section 3a shown in Figs.
  • a substrate 1a made of a ceramic mainly composed of alumina is prepared.
  • the substrate la may be made of another crystal such as ceramic or silicon.
  • lower magnetic yokes 2a and 2a ' are formed on the substrate 1a.
  • the lower magnetic yokes 2 a and 2 a ′ are a 5 m-thick Ni—Fe alloy and are formed by an electroplating method.
  • the lower magnetic yokes 2a and 2a ' may be made of a material having a large saturation magnetization and a high magnetic permeability, and a Fe-based microcrystalline alloy such as a Co—Ni—Fe-based alloy or Fe—Ta—N-based alloy. Alternatively, a Co-based amorphous alloy such as Co—Ta—Zr or soft iron may be used. As a film forming method, a sputtering method, an evaporation method, or the like can be used in addition to the electric plating method.
  • the thickness of the lower magnetic yokes 2a and 2a ' may be from 0.1 / zm to 500 im, more preferably from 1 m to 200 ⁇ m.
  • thin film coils 2c and 2c ' are formed on the lower magnetic yokes 2a and 2a', respectively.
  • insulating layers 2e and 2e ' for insulating the lower magnetic yokes 2a and 2a' from the thin-film coils 2c and 2c are formed.
  • known photolithography A pattern of a photoresist is formed by a graphic technique, and the pattern is heated to 250 ° C. or more and cured to form the insulating layers 2 e and 2 e ′.
  • the insulating layers 2 e and 2 e ′ may be formed by processing a sputtered film of alumina or Si 2 .
  • thin-film coils 2c and 2c ' are formed on the insulating layers 2e and 2a'.
  • a photoresist mask having a pattern with a groove in the coil shape is formed in advance, and Cu is selectively grown in the groove of the mask by the electroplating method.
  • a desired coil shape is formed.
  • insulating layers 2f and 2f 'for insulating and protecting the thin-film coils 2c and 2c' are formed.
  • the insulating layers 2f and 2f ' may be formed by forming a photoresist pattern by a known photolithography technique, and heating and curing the photoresist pattern at 250 ° C. or higher.
  • the insulating layers 2 f and 2 f ′ may be formed by processing an alumina or Si 2 sputtered film.
  • upper magnetic yokes 2b and 2b ' are formed.
  • the upper and magnetic yokes 2b and 2b ' may be made of, for example, a Ni-Fe alloy having a thickness of 20 ⁇ m, and may be formed by an electroplating method.
  • the upper magnetic yokes 2b and 2b ' may be made of a material having a large saturation magnetization and a high magnetic permeability.
  • Fe-based alloys such as Co-Ni-Fe-based alloys and Fe-Ta-N It may be composed of a microcrystalline alloy, a Co amorphous alloy such as Co_Ta_Zr, or soft iron.
  • a sputtering method, a vapor deposition method, or the like can be used in addition to the electroplating method.
  • the thickness of the upper magnetic yokes 2b and 2b ' should be 0.1 ⁇ m to 50 ° ⁇ m, more preferably 1 ⁇ m to 200 m.
  • the entire area is coated with an alumina film 1b by the Spack method, and subsequently, as shown in FIG. 3f, the alumina film 1b is flattened and polished to form a protective layer 1b.
  • the upper magnetic yokes 2b and 2b 'serving as magnetic poles are exposed on a flat surface.
  • the base 1 having two thin-film electromagnets including the lower magnetic yokes 2a, 2a, the upper magnetic yokes 2b, 2b, and the thin-film coils 2c, 2c ' is completed.
  • the upper magnetic yokes 2b and 2b 'serving as magnetic poles are exposed on the surface, In both cases, the surface is flat, making it easier to construct structures on top.
  • manufacturing an electromagnet using a thin process enables a plurality of electromagnets to be manufactured in an arbitrary arrangement on a substrate la, and also enables the manufacture of small electromagnets that are impossible with conventional machining. Make it possible.
  • insulating layers 6, 6 'for insulating the pole faces are formed on the upper magnetic yokes 2b, 2b' and the thin-film coils 2c, 2c '.
  • the insulating layers 6 and 6 ′ may be formed by processing a film formed by sputtering alumina with a known photolithography technique and etching technique. As the etching technique, for example, ion beam etching can be used.
  • the insulating layers 6 and 6 ' are not always necessary, and may be formed as necessary.
  • electric contacts 4, 4 ' are formed on the upper magnetic yokes 2b, 2b' and the thin-film coils 2c, 2c.
  • a metal containing at least one of rhodium, palladium, gold, and ruthenium can be used as a material of the electrical contact.
  • a sacrifice layer 10 having an opening is formed at a position where a pillar 3b described later is formed.
  • a photoresist pattern is formed on the column 3 b forming portion by a known photolithography technique, and in this state, a copper film is selectively formed to a thickness of 50 ⁇ m by an electroplating method. It may be formed by depositing to about ⁇ .
  • the thickness of the sacrificial layer 10 can be adjusted from about 0.05 ⁇ to about 500 ⁇ .
  • the sacrifice layer 10 may be made of a photoresist.
  • a support film 3b is formed by growing an Au film in the opening of the sacrificial layer 10 by plating.
  • a flat layer 11 made of a partially plated copper film on the support portion 3b is formed.
  • a spring material is deposited on the flattening layer 11 including the open portion by sputtering to form a thin film, and this thin film is processed by a known photolithography technique and etching technique, as shown in FIG.
  • the spring portion 3c is formed.
  • a spring material may be formed by sputtering, and the shape of the spring portion may be formed by lift-off.
  • the formation of the thin film is not limited to the sputtering method, and another vapor phase growth method such as a vacuum evaporation method may be used. Needless to say, the thin film may be formed by a liquid phase growth method such as a plating method.
  • a CoTaZrCr amorphous alloy may be used.
  • an amorphous metal containing Ta or W as a main component, or a shape memory metal such as a Ni_Ti alloy can be used.
  • phosphor bronze, beryllium copper, aluminum alloy, or the like having various compositions can be used.
  • the advantage of using amorphous metal is that since there is no crystal grain boundary, metal fatigue from the grain boundary does not occur in principle, and a highly reliable and long-lasting spring can be realized.
  • An advantage of using a shape memory metal is that an initial shape can be maintained against repeated deformation. As described above, according to the present embodiment, each of them can be properly used according to the purpose.
  • the electrical contacts 5, 5 ' are formed on the flattening layer 11 corresponding to the upper portions of the electrical contacts 4, 4'.
  • This can be formed by forming a photoresist mask in advance, forming a film by sputtering, and forming a shape of an electrical contact by lift-off. Platinum sputtered films are used as the electric contacts 5 and 5 '. Further, a metal containing at least one of platinum, rhodium, palladium, gold, and ruthenium can be used.
  • a flattening layer 11 ′ is formed, and the steps between the spring portion 3c and the electric contacts 5, 5 ′ are flattened.
  • the flattening layer 1 1 ′ is formed by forming a photoresist mask on the spring portion 3 c and the electrical contacts 5, 5, and forming a Cu film by a highly directional sputtering method using an ion beam sputtering method. It may be formed by lift-off by removing the photoresist mask.
  • a method of applying a photoresist film and then removing the photoresist film in the portions of the spring portions 3c and the electrical contacts 5, 5 ' is possible. In any case, The planarization layer 11 'is finally removed together with the sacrificial layer 10 and the planarization layer 11.
  • the movable portion 3a is formed.
  • the movable section 3a is formed by forming a film of the movable section material by sputtering and then performing patterning by a known photolithography technique.
  • a film of the movable portion material may be formed, and the shape of the movable portion may be formed by lift-off.
  • the thickness of the movable part 3a is 1 inch.
  • the thickness of the movable part 3a can be adjusted from 0.1 ⁇ m to 100 ⁇ m. More preferably, it is 0,5 ⁇ m3 ⁇ 4 and 10 / zm.
  • the material used for the movable portion 3a has a magnetic material.
  • a soft magnetic material can be used.
  • Soft magnetic materials include Fe-based microcrystalline alloys such as Ni-Fe alloy, Co-Ni-Fe alloy, Fe-Ta-N, and Co-based materials such as Co-Ta-Zr. Amorphous alloy, soft iron, etc. are suitable.
  • the magnetic material of the movable portion 3a a magnetic material that easily forms residual magnetization can be used.
  • the magnetic material that easily forms remanent magnetization include: 0— ⁇ 1—curan 1 alloy, J 0— (): — Cho alloy, Sm—Co alloy, Nd—Fe—B alloy, Fe—A 1—N i _Co alloy , Fe_Cr-Co alloy, Co-Fe-V alloy, Cu-Ni-Fe alloy, etc.
  • the portion 3a is magnetized in the left-right direction in FIG. 4e, for example, the left side is an N pole, and the right side is an S pole.
  • a movable part 3a is formed on the support part 3b via the spring part 3c as shown in Fig. 4f.
  • the obtained state is obtained.
  • the sacrificial layer 10 and the planarizing layers 11 and 11 ′ are made of Cu, they are removed by chemical etching.
  • the sacrificial layer 10 and the planarizing layers 11 and 11 ′ are photoresists, they can be removed by oxygen asshing.
  • FIG. 5A is a plan view showing a configuration example of the switching element in the present embodiment
  • FIG. 5B is a cross-sectional view.
  • the chucking element has a lower magnetic yoke 12a disposed on a base 11a, and further includes a thin-film coil 12c and an upper magnetic yoke 12b. At the center of the winding of the thin film coil 12c, the upper magnetic yoke 12b crosses the thin film coil. In other words, the upper magnetic yoke 12b passes through the center of the winding of the thin-film coil 12c.
  • the upper magnetic yoke 12b and the lower magnetic yoke 12a are magnetically connected.
  • the magnetic yoke When a current flows through the thin film coil 12c, the magnetic yoke is magnetized to form N (S) and S (N) magnetic poles.
  • the lower magnetic yoke 12a can be formed sufficiently large in the plane, the demagnetizing field can be reduced, and the magnetic yoke is easily magnetized even with a small coil current.
  • the lower magnetic yoke 12a can be expanded up to the end of the base 11a.
  • the connection portion 12d is formed of the same magnetic material as the upper magnetic yoke 12b.
  • the upper magnetic yoke 12b is made of a Ni-Fe alloy having a thickness of 100 ⁇ m, and can be formed by an electroplating method.
  • the upper magnetic yoke 12b may be made of a material having high saturation magnetization and high magnetic permeability, such as a Co-Ni-Fe-based alloy, an Fe-based microcrystalline alloy such as Fe-Ta-N, or a Co- A Co-based amorphous alloy such as Ta—Zr or soft iron may be used.
  • a sputtering method, an evaporation method, or the like can be used in addition to the electric plating method.
  • the monthly thickness of the upper magnetic yoke 12b is 0.1 ⁇ m to 200 ⁇ m, more preferably ⁇ to 100 ⁇ m.
  • the lower magnetic yoke 12a may be made of a soft magnetic material. Specifically, any material having a high saturation magnetization and a high magnetic permeability may be used. A 6-system alloy, a Fe-based microcrystalline alloy such as Fe—Ta—N, a Co-based amorphous alloy such as Co—Ta—Zr, or a soft iron may be used. As a method for forming a film of these materials, a sputtering method, an evaporation method, or the like can be used in addition to the electric plating method. The film thickness of the lower magnetic yoke 2a is 0.1 ⁇ to 500 im, more preferably 1 ⁇ m to 200 m.
  • the thin-film electromagnet including the lower magnetic yoke 12a, the upper magnetic yoke 12b, the thin-film coil 12c, and the connection portion 12d is applied to the protective layer 11 on the base 11a. Therefore, the upper magnetic yoke 12b, which is flattened and becomes a magnetic pole, is exposed on the flat surface.
  • An electrical contact 14 is provided on 1 lb of the protection, and is fixed via an insulating film 13 b on a support 13 d formed by connecting to the connection 12 d.
  • the movable portion 13a is fixed via the spring portion 13c.
  • the movable part 13 a is provided with an electric contact 15 at a position facing the electric contact 14.
  • the spring portion 13c has a thin film structure composed of one or more planes and another one or more planes continuous with this plane at a predetermined angle.
  • the predetermined angle may be, for example, approximately 90 °.
  • the structure of the spring portion 31c not only the structure shown in FIG. 2A but also the structures shown in FIGS. 2B, 2C, 2D, and 2E are effective.
  • the connection portion 13d can be formed of the same magnetic material as the upper magnetic yoke 12b.
  • the movable portion 13a By making the movable portion 13a a magnetic material, an electromagnetic force acts between the end of the movable portion 13a and the upper surface of the upper magnetic yoke 12b.
  • a soft magnetic material can be used as the magnetic material of the movable portion 13a.
  • Soft magnetic materials include Fe microcrystalline alloys such as Ni_Fe alloy, Co—Ni—Fe alloy, Fe—Ta—N, and Co such as Co—Ta—Zr. Amorphous alloys, soft iron, etc. are suitable.
  • Magnetic materials that easily form remanent magnetization include Co—Cr—Pt alloys. 0- J 1: Alloy and alloy, Sm-Co alloy, Nd-Fe-B alloy, Fe-A1-Ni-C0 alloy, Fe_Cr-Co alloy, Co-F e-V alloys, Cu-Ni-Fe alloys, etc. are suitable.
  • the operation of the movable portion 13a made of a magnetic material that easily forms residual magnetization is as follows.
  • the movable portion 13a is magnetized in the left-right direction in FIG. 5a.
  • the left side is an N pole
  • the right side is an S pole.
  • the surface of the upper magnetic yoke 12 b is Or operate to be S pole.
  • an attractive force acts between the upper magnetic yoke 12b and the right end of the movable portion 13a, and the right end of the movable portion 13a faces the upper magnetic yoke 12b. It falls down and the electrical contacts turn on.
  • FIG. 6A is a plan view illustrating a configuration example of the switching element according to the present embodiment
  • FIG. 6B is a cross-sectional view.
  • This switching element includes a lower magnetic yoke 2a, 2a 'on a substrate 1a, a thin-film coil 2c, 2c' and an upper magnetic yoke 2b, 2b '.
  • the upper magnetic yokes 2b, 2b ' At the center of the winding of the thin film coil 2c2c, the upper magnetic yokes 2b, 2b 'intersect with the thin film coil 2c, 2c.
  • the upper magnetic yokes 2b, 2b 'and the lower magnetic yokes 2a, 2a' are magnetically connected, and when a current flows through the thin-film coils 2c, 2c ', these magnetic yokes are magnetized. , S form a magnetic pole.
  • the switching element in FIG. 6 has a reflective surface for reflecting light on the protective layer lb, and a movable part 3a functioning as a mirror for reflecting light is provided via spring parts 3c and 3c '. And are fixed to the support portions 3b, 3b '.
  • the movable portion 3a is supported from both sides by support portions 3b, 3b 'via spring portions 3c, 3c, and a spring portion 3c, 3b.
  • the point of contact with 3 c ′ is a fulcrum, and extends on both sides of the fulcrum.
  • the spring portions 3c, 3c ' are composed of one or more planes as shown in FIG. A thin-film structural member consisting of one or more other continuous planes at a fixed angle. It is also assumed that the predetermined angle is approximately 90 °. By doing so, the bending of the spring portion as shown in FIG. 11 described above is suppressed.
  • the structure of the spring portions 3c and 3c ' is not limited to the structure shown in FIG. 2a, but is also effective in the structures shown in FIGS. 2b, 2c, 2d and 2e.
  • the surface of the movable part 3a is coated with a material suitable for reflecting light. Specifically, the entire surface of the movable portion 3a, or at least a region to which light is applied, is coated with a thin film of gold or silver.
  • the gold or silver thin film may be formed by a sputtering method or a vapor deposition method.
  • the movable part 3a is composed of one or more planes as shown in FIG. 7a, FIG. 7b, FIG. 7c, and FIG. A thin-film structural member composed of one or more flat surfaces. It is also assumed that the predetermined angle is approximately 90 °. With this configuration, the curvature of a part of the mirror as shown in FIG. 12 is suppressed.
  • the movable portion 3a may be a thin film structural member composed of one or more planes and another curved surface continuous with this plane at 90 °, for example. good. Even with such a structure, the bending of the mirror section as shown in FIG. 12 is suppressed.
  • the spring portion which is a thin film structural member composed of a thin film having one or more surfaces and another one or more surfaces continuous with this surface at a predetermined angle. , The above-described bending and the like can be suppressed.
  • a method of manufacturing the movable portion 3a will be described with reference to FIG. In FIG. 8, the base part is omitted.
  • a mask pattern 22 having an opening in a predetermined region is formed.
  • the sacrificial film 21 is selectively etched using the mask pattern 22 to form a concave portion in the sacrificial film 21.
  • a thin film 23 serving as a movable portion is formed on the sacrificial film 21 along the concave portion, and as shown in FIG. 8 e, A mask pattern 24 is formed on the thin film 23.
  • the thin film 23 is selectively etched using the mask pattern 24 as a mask, and as shown in FIG. To form Thereafter, by removing the mask pattern 24 and the sacrificial film 21, the movable portion 3a is obtained as shown in FIG. 8g.
  • the thin film 23 may be formed by a vapor deposition method such as a sputtering method and a vacuum evaporation method. Further, the thin film may be formed by a liquid phase growth method such as a plating method.
  • the movable portion 3a may be made of a soft magnetic material.
  • Soft magnetic materials constituting the corner 3a include Fe microcrystalline alloys such as Ni_Fe alloy, Co—Ni—Fe alloy, Fe—Ta—N, and Co—Ta—Z. Suitable are Co-based amorphous alloys such as r, and soft iron.
  • the movable portion 3a may be made of a magnetic material that easily forms residual magnetization.
  • Magnetic materials that easily form remanent magnetization include Co—Cr—Pt alloys, CoCr—Ta alloys, Sm—Co alloys, Nd—Fe—B alloys, Fe-A1-Ni-Co-based alloys, Fe-Cr-Co-based alloys, Co-Fe-V-based alloys, and Cu-Ni-Fe-based alloys are suitable.
  • the movable portion 3a When the movable portion 3a is made of a magnetic material that easily forms residual magnetization, it can be operated as described below.
  • magnetization is performed in the left-right direction in FIG. 6, for example, the left side is an N pole, and the right side is an S pole.
  • the left and right upper magnetic yokes 2b, 2b ' are operated so that their surfaces become N pole or S pole at the same time.
  • N poles an attractive force acts between the upper magnetic yoke 2 b on the right and the movable part 3 a
  • a repulsive force acts between the upper magnetic yoke 2 b on the left and the movable part
  • the movable part 3a falls to the right.
  • by adjusting the current amount of the thin film coils 2 c and 2 c ′ The inclination angle of the moving part 3a can be controlled. In other words, an optical switch capable of controlling a single port is realized.
  • the movable portion 3 a remains. Due to demagnetization, an attractive force acts between the magnetic pole of the upper magnetic yoke 2 b ′ on the right side and the movable part 3 a, so that the movable part 3 a remains to the right.
  • the left and right thin-film electromagnets are alternately operated while the left and right poles are magnetized in the left and right directions in Fig. 6 with the N pole on the left side and the S pole on the right side.
  • analog control that achieves a stable and large swing angle is realized.
  • the attractive force between the magnetic poles if the magnetic pole interval is narrowed to some extent, the attractive force between the two magnetic poles increases rapidly, and it becomes impossible to control the angle of the movable part.
  • using repulsive force between magnetic poles can solve this problem.
  • the movable portion 3a is supported by the spring portions 3c and 3c' and is kept horizontal.
  • a current is applied to the thin-film coil 2c so that the upper surface of the upper left magnetic yoke 2b becomes the N pole.
  • a repulsive force is generated at the left ends of the upper magnetic yoke 2b and the movable portion 3a, and the movable portion 3a is inclined rightward and inclined until the right end contacts the upper surface of the right upper magnetic yoke 2b '.
  • the right end of the movable portion 3a is an S pole, and when the right end of the movable portion 3a and the upper surface of the upper magnetic yoke 2b 'on the right approach, the attractive force of both increases.
  • the current of the thin-film coil 2c ' is adjusted so that no magnetic pole is generated on the upper surface of the upper right magnetic yoke 2b' so as to cancel the attractive force of both. This allows analog control until the right end of the movable portion 3a contacts the upper surface of the right upper magnetic yoke 2b '.
  • the current of the thin film coil 2c is adjusted so that no magnetic pole is generated on the upper surface of the upper left magnetic yoke 2b.
  • analog aperture control it is possible to perform analog aperture control until the left end of the movable portion 3a contacts the upper surface of the upper magnetic yoke 2b.
  • FIG. 9A is a plan view showing a configuration example of the switching element in this embodiment
  • FIG. 9B is a cross-sectional view.
  • This switching element has lower magnetic yokes 2a and 2a 'on a substrate 1a, and thin-film coils 2c and 2c' and upper magnetic yokes 2b and .2b on this.
  • the upper magnetic yokes 2 b and 2 b ′ are at the center of the windings of the thin film coils 2 c and 2 c ′.
  • the upper magnetic yokes 2b, 2b 'and the lower magnetic yokes 2a, 2a' are magnetically connected, and when a current flows through the thin-film coils 2c, 2c ', these magnetic yokes are magnetized.
  • Form N S magnetic poles.
  • the lower magnetic yokes 2 a and 2 a ′, the upper magnetic yokes 2 b and 2 b ′, and the thin-film coils 2 c and 2 c ′ are flattened by a protective layer 1 b on the substrate la.
  • FIGS. 9a and 9b are provided with a spring part 3c,
  • the movable portion 3a is supported on the support portions 3b, 3b, via spring portions 3c, 3c 'on both sides of the center portion, and contacts the spring portions 3c, 3c'. With the position as a fulcrum, it extends on both sides of the fulcrum.
  • the movable portion 3a is configured such that the spring portions 3c, 3c 'are formed by one or more planes as shown in FIG. 2a and another one or more planes formed at a predetermined angle with this plane.
  • a thin film structural member composed of Also, when the predetermined angle is approximately 90 °, Suppose there is.
  • the structure of the spring portions 3c and 3c ' is effective not only in the structure shown in FIG. 2A but also in the structures shown in FIGS. 2B, 2C, 2D and 2E.
  • the switching element of the present embodiment includes a mirror structure 9 for reflecting light on the upper surface of the movable portion 3a.
  • the mirror structure 9 may be manufactured by forming a metal film or an insulating film to be a mirror structure on a sacrificial layer formed in advance by sputtering or the like, and patterning this.
  • the mirror structure 9 has one or more surfaces as shown in FIGS. 7a, 7b, 7c, 7d, and 7e, and another surface that is continuous at a predetermined angle to the surfaces.
  • a thin film structural member comprising at least one surface.
  • the predetermined angle may be, for example, approximately 90 °. With such a configuration, the bending of the mirror section as shown in FIG. 12 is suppressed.
  • the movable portion 3a By using the movable part 3a as a magnetic 1 "living body, an electromagnetic force acts between the end of the movable part and the upper surfaces of the upper magnetic yokes 2b and 2b ', which are the magnetic poles of the thin film electromagnets 2 and 2'.
  • the movable portion 3a may be made of a soft magnetic material, such as] ⁇ 1-6 alloy, Co-Ni-Fe alloy, Fe-Ta- ⁇ , any Fe type. Microcrystalline alloys, Co-based amorphous alloys such as Co-Ta_Zr, and soft iron are suitable.
  • the movable portion 3a may be made of a magnetic material that easily forms a remanent magnet.
  • a magnetic substance that easily forms residual magnetization ⁇ 0 _ ⁇ 1: ⁇ ? 1: Alloy, Co—Cr—Ta alloy, Sm_Co alloy, Nd—Fe—B alloy, Fe—Al—Ni—Co alloy, Fe—Cr—Co Alloys, ⁇ 0-6- ⁇ alloys, Cu-Ni-Fe alloys, etc. are suitable.
  • the operation of the switching element configured as described above will be described.
  • the movable part 3a made of a magnetic material that easily forms residual magnetization is 9a and 9b are magnetized in the left and right direction.
  • the left side is the N pole
  • the right side is the S pole.
  • the attractive force is applied between the upper magnetic yoke 2 b ′ on the right and the movable part 3 a, and the attractive force is generated between the upper magnetic yoke 2 b and the movable part 3 a on the left.
  • the repulsive force acts, and the movable part 3a falls to the right.
  • the inclination angle of the movable portion 3a can be controlled. That is, an optical switch capable of analog control is realized.
  • the residual magnetization of the movable part 3 a causes Since an attractive force acts between the magnetic poles of the magnetic yokes 2b and 2 and the movable portion a, the movable portion 3a remains to the right.
  • the movable part 3a is magnetized in the left and right directions in FIGS. 9a and 9b, and the left and right electromagnets 2 and 2 'are alternately arranged with the left side having the N pole and the right side having the S pole.
  • analog control that can obtain a stable and large swing angle is realized.
  • repulsive force between magnetic poles can solve this problem.
  • the movable portion 3 a is supported by the spring portions 3 c and 3 c ′ and keeps a horizontal position.
  • a current is supplied to the thin-film coil 2c so that the upper surface of the upper left magnetic yoke 2b becomes the N pole.
  • a repulsive force is generated between the upper magnetic yoke 2b and the left end of the movable portion 3a, the movable portion 3a is inclined rightward, and the right end of the movable portion 3a is positioned on the right upper magnetic yoke 2b, the upper surface. Slanting until it touches.
  • the right end of the movable portion 3a is an S pole, and when the right end of the movable portion 3a and the upper surface of the right magnetic yoke approach, the attractive force of both increases. At this time, strike both gravitational forces The current of the thin-film coil 2c 'is adjusted so that no magnetic pole is generated on the upper surface of the upper right magnetic yoke 2b'. Thus, analog control is possible until the right end of the movable portion 3a contacts the upper surface of the upper right magnetic yoke 2b.
  • the current of the thin-film coil 2c is adjusted so that no magnetic pole is generated on the upper surface of the upper magnetic yoke 2b on the left side. bAnalog control until touching the top surface is possible.
  • an analog-controlled optical switch that can obtain a stable and large swing angle is realized.
  • the above-described magnetic material can be partially applied to the movable portion 3a.
  • an optical switch of analog control that can obtain a stable and large swing angle is realized.
  • the above-described magnetic material can be partially applied to the movable portion 3a.
  • the thin film structural member according to the present invention is capable of turning on / off a signal having a wide frequency range from DC to gigahertz or more, and capable of wavelength conversion. It is suitable for micro 'electronics' mechanical system (MEMS) switches applicable to various semiconductor lasers, optical filters and optical switches.
  • MEMS micro 'electronics' mechanical system

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)

Abstract

Un élément de commutation comprend des contacts électriques (4, 4') disposés sur un substrat (1) et une partie mobile (3a) possédant des contacts électriques (5, 5') disposés sur ladite partie mobile (3a), qui est fixée aux parties de support (3b, 3b') à travers des parties à ressorts (3c, 3c') formées d'un élément structurel mince possédant une ou plusieurs surfaces planes, l'autre surface plane (ou les autres surfaces planes) étant continues avec les surfaces planes et orientée sous un certain angle, par exemple, à 90°.
PCT/JP2002/009680 2001-10-02 2002-09-20 Element structurel en film mince, procede de fabrication dudit element et element de commutation utilisant cet element WO2003031320A1 (fr)

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JP2001-306832 2001-10-02
JP2001306832A JP2003117896A (ja) 2001-10-02 2001-10-02 薄膜構造部材とその製造方法およびこれを用いたスイッチング素子

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WO2003031320A1 true WO2003031320A1 (fr) 2003-04-17

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Cited By (1)

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CN113265644A (zh) * 2021-04-04 2021-08-17 上海尚享信息科技有限公司 一种基于敏感元件制造的化学气相淀积用设备

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Publication number Priority date Publication date Assignee Title
JP2009083018A (ja) * 2007-09-28 2009-04-23 Fujitsu Ltd マイクロ構造体製造方法
WO2011080883A1 (fr) * 2009-12-28 2011-07-07 株式会社ニコン Convertisseur électromécanique, modulateur optique spatial, dispositif d'exposition, et leurs procédés de fabrication
JP5630015B2 (ja) * 2009-12-28 2014-11-26 株式会社ニコン 空間光変調器、露光装置およびそれらの製造方法
JP6640221B2 (ja) * 2015-07-23 2020-02-05 オリンパス株式会社 光走査型内視鏡および光ファイバ走査装置
JP6973198B2 (ja) * 2018-03-12 2021-11-24 オムロン株式会社 光偏向器、及びライダー装置

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US4317611A (en) * 1980-05-19 1982-03-02 International Business Machines Corporation Optical ray deflection apparatus
JPH08146035A (ja) * 1994-11-23 1996-06-07 Tokyo Gas Co Ltd 可変仮想錘加速度計
JP2001076605A (ja) * 1999-07-01 2001-03-23 Advantest Corp 集積型マイクロスイッチおよびその製造方法

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US4317611A (en) * 1980-05-19 1982-03-02 International Business Machines Corporation Optical ray deflection apparatus
JPH08146035A (ja) * 1994-11-23 1996-06-07 Tokyo Gas Co Ltd 可変仮想錘加速度計
JP2001076605A (ja) * 1999-07-01 2001-03-23 Advantest Corp 集積型マイクロスイッチおよびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113265644A (zh) * 2021-04-04 2021-08-17 上海尚享信息科技有限公司 一种基于敏感元件制造的化学气相淀积用设备

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