WO2002089176A2 - Verfahren zum vereinzeln von elektronischen bauteilen aus einem verbund - Google Patents

Verfahren zum vereinzeln von elektronischen bauteilen aus einem verbund Download PDF

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Publication number
WO2002089176A2
WO2002089176A2 PCT/EP2002/004001 EP0204001W WO02089176A2 WO 2002089176 A2 WO2002089176 A2 WO 2002089176A2 EP 0204001 W EP0204001 W EP 0204001W WO 02089176 A2 WO02089176 A2 WO 02089176A2
Authority
WO
WIPO (PCT)
Prior art keywords
carrier
adhesive
heat
components
composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2002/004001
Other languages
German (de)
English (en)
French (fr)
Other versions
WO2002089176A3 (de
Inventor
Volker Brod
Ludger Overmeyer
Hans-Peter Monser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Muehlbauer GmbH and Co KG
Original Assignee
Muehlbauer GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Muehlbauer GmbH and Co KG filed Critical Muehlbauer GmbH and Co KG
Priority to JP2002586378A priority Critical patent/JP2004531061A/ja
Priority to EP02766624A priority patent/EP1419524A2/de
Priority to US10/474,644 priority patent/US20050164472A1/en
Publication of WO2002089176A2 publication Critical patent/WO2002089176A2/de
Anticipated expiration legal-status Critical
Publication of WO2002089176A3 publication Critical patent/WO2002089176A3/de
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/50Additional features of adhesives in the form of films or foils characterized by process specific features
    • C09J2301/502Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2400/00Presence of inorganic and organic materials
    • C09J2400/10Presence of inorganic materials
    • C09J2400/12Ceramic
    • C09J2400/123Ceramic in the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Definitions

  • the invention relates to a method for separating electronic components from a composite, in particular chips from a wafer, in which the composite is first glued to a carrier and the components are separated from one another, after which the components are then used individually or in groups using a Vacuum pipette are detached from the carrier, the adhesive effect of the adhesive being selectively reduced, the adhesive reducing its adhesive effect in the corresponding area before or when the components are detached.
  • wafers have been placed on a stretchable carrier film. These wafers are then cut into individual chips in a sawing process. This sawn wafer on carrier foil forms the input material for the so-called die-bond processes with a carrier frame.
  • a needle the so-called die ejector, is first moved under the chip to be detached from the back, which removes the chip from the carrier film from below.
  • the chip released in this way is taken over with a vacuum pipette and transferred to another substrate, where the chip is then subjected to further processes.
  • a method is known in which, in addition to the above-mentioned features, the adhesive of the carrier material is weakened by the action of a heat source in order to improve the detachment of the chip.
  • the object of the present invention is to provide a method with which it is possible to separate onto thinner chips, including chips that behave similarly to a film. These are in particular silicon chips with a thickness of less than 60 ⁇ m to a thickness of 10 ⁇ m.
  • the method according to the invention provides that the carrier is designed as a rigid plate, preferably made of glass, glass ceramic or plastic, the Glue is deactivated in the corresponding area of the composite before the components are detached, the component being lifted off exclusively via the vacuum pipette.
  • the advantage of this method is that vacuum pipettes can still be used for detaching, as in the previous methods, and that it is also possible in a simple manner to detach even thin chips which have high ductility and a film-like behavior, whereby no The ejector is used.
  • the carrier can consist of a rigid plate, preferably made of glass, glass ceramic or plastic.
  • the thermal conductivity of the carrier is better transversely to the carrier plane than in the carrier plane. Materials, in particular glass ceramics, which have these properties are well known; they are used for example in ceramic hobs.
  • the adhesive is designed as a film. This ensures a uniform adhesive strength on the carrier.
  • the carrier consists of a rigid plate, preferably made of glass, glass ceramic or plastic.
  • the thermal conductivity of the carrier is better transversely to the carrier plane than in the carrier plane.
  • Materials, in particular glass ceramics, which have these properties are well known; they are used for example in ceramic hobs.
  • the adhesive is designed as a film. This ensures a uniform adhesive strength on the carrier.
  • the selectively deactivated adhesive is heat-soluble. This makes it particularly easy to deactivate the adhesive in a specific area of the composite by applying specific heat in order to then detach the individual components. In the case of particularly thin components, the heat can be applied through the component to deactivate the adhesive.
  • the heat to deactivate the adhesive can also be applied through the carrier. This option is useful, for example, if the components are somewhat thicker or sensitive to heat. A simple way of applying heat is to use hot air. However, the application of heat by heat radiation, for example infrared or laser radiation, is also advantageous.
  • the electrical components are preferably silicon chips with a thickness of 10 ⁇ m to ⁇ O ⁇ m.
  • FIG. 1 shows a plan view of a sawn wafer on a carrier plate
  • FIG. 2 shows a sectional view through the carrier plate from FIG. 1 along the line II-II
  • FIG. 3 shows an enlarged detailed view from FIG. 2 with a schematic representation of two heat sources and one vacuum pipette.
  • a glass plate 1 as a carrier plate for an already sawn wafer 2, which consists of a multiplicity of chips 3 already separated from one another. It is a wafer or chip that has a thickness of less than 60 ⁇ m and a film-like behavior.
  • the wafer 2 is glued to the glass plate 1 with the aid of an adhesive film 4.
  • the adhesive film 4 consists of a heat-soluble adhesive, i.e. an adhesive that loses or greatly reduces its adhesive properties when heated.
  • an adhesive film 4 is applied to the glass plate 1.
  • the wafer 2 is then glued as a whole onto this adhesive film 4.
  • the adhesive film can also be glued to the wafer 2, which is then glued to the glass plate with the adhesive film 4.
  • the wafer 4 on the glass plate 1 is separated into the individual chips 3. This is done in a conventional manner by sawing.
  • the adhesive film 4 is heated in the area of the wafer 2 from which the respective chip 3 is to be removed. 3 shows two different methods for this. In the left half 3, the underside of the glass plate 1 below the chip 3 to be removed is heated by means of a radiation source 5. In this area, the adhesive film 4 comes off, so that the chip can be removed upwards using a conventional vacuum pipette 6.
  • FIG. 3 An alternative is shown in the right half of FIG. 3. There the heat is introduced from the top, this time with the aid of a hot air nozzle 7, which is placed above the chip 3 to be removed. The heat penetrates the chip 3 and dissolves the adhesive of the adhesive film 4 underneath. The hot air nozzle 7 then moves laterally and makes room for the vacuum pipette 6, which then receives the chip in a conventional manner.
  • the chips removed with the vacuum pipette 6 can be processed further in a conventional manner, for example glued to another substrate or processed further in a subsequent die-bonding process.
  • a large area of the carrier can also be heated so that the adhesive in the area of several chips is deactivated at the same time.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
PCT/EP2002/004001 2001-04-10 2002-04-10 Verfahren zum vereinzeln von elektronischen bauteilen aus einem verbund Ceased WO2002089176A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002586378A JP2004531061A (ja) 2001-04-10 2002-04-10 複合体から電子部品を分割する方法
EP02766624A EP1419524A2 (de) 2001-04-10 2002-04-10 Verfahren zum vereinzeln von elektronischen bauteilen aus einem verbund
US10/474,644 US20050164472A1 (en) 2001-04-10 2002-04-10 Method for separating electronic components from a composite

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10117880A DE10117880B4 (de) 2001-04-10 2001-04-10 Verfahren zum Vereinzeln von elektronischen Bauteilen aus einem Verbund
DE10117880.8 2001-04-10

Publications (2)

Publication Number Publication Date
WO2002089176A2 true WO2002089176A2 (de) 2002-11-07
WO2002089176A3 WO2002089176A3 (de) 2004-03-11

Family

ID=7681089

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/004001 Ceased WO2002089176A2 (de) 2001-04-10 2002-04-10 Verfahren zum vereinzeln von elektronischen bauteilen aus einem verbund

Country Status (5)

Country Link
US (1) US20050164472A1 (enExample)
EP (1) EP1419524A2 (enExample)
JP (1) JP2004531061A (enExample)
DE (1) DE10117880B4 (enExample)
WO (1) WO2002089176A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10323857A1 (de) 2003-05-26 2005-01-27 Osram Opto Semiconductors Gmbh Gehäuse für ein Laserdiodenbauelement, Laserdiodenbauelement und Verfahren zum Herstellen eines Laserdiodenbauelements
JP2005019571A (ja) * 2003-06-24 2005-01-20 Canon Inc チップの実装方法及び実装基板の製造装置
DE10334576B4 (de) * 2003-07-28 2007-04-05 Infineon Technologies Ag Verfahren zum Herstellen eines Halbleiterbauelements mit einem Kunststoffgehäuse
JP5514302B2 (ja) * 2009-05-06 2014-06-04 コーニング インコーポレイテッド ガラス基板用の担体
DE102009035099B4 (de) * 2009-07-29 2017-09-28 Asm Assembly Systems Gmbh & Co. Kg Vorrichtung und Verfahren zum Abheben von Bauteilen von einem Träger
EP2434528A1 (en) 2010-09-28 2012-03-28 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO An active carrier for carrying a wafer and method for release
DE102016001602A1 (de) 2016-02-11 2017-08-17 Mühlbauer Gmbh & Co. Kg Vorrichtung und Verfahren zum Lösen auf einem Substral bereitgestellter elektronischer Bauteile mittels einer Strahlenquelle
DE102023109165B4 (de) 2023-04-12 2025-10-09 Infineon Technologies Ag Verfahren und Apparatur zum Lösen einer haftfähigen Basisstruktur zum Ablösen einer elektronischen Komponente

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2492164B1 (fr) * 1980-10-15 1987-01-23 Radiotechnique Compelec Procede de realisation simultanee de liaisons electriques multiples, notamment pour le raccordement electrique d'une micro-plaquette de semiconducteurs
JPS62267384A (ja) * 1986-05-15 1987-11-20 Sun A Chem Ind Co Ltd ダイシングテ−プ
JPS6351273A (ja) * 1986-08-19 1988-03-04 Mitsubishi Electric Corp 半導体基板の切り出し用テ−プ接着方法およびその装置
JPH067571B2 (ja) * 1988-07-28 1994-01-26 株式会社東芝 半導体チップの剥離装置
US4934582A (en) * 1989-09-20 1990-06-19 Microelectronics And Computer Technology Corporation Method and apparatus for removing solder mounted electronic components
JPH0492450A (ja) * 1990-08-08 1992-03-25 Sumitomo Electric Ind Ltd チップ状部品のピックアップ方法及びその装置
US5072874A (en) * 1991-01-31 1991-12-17 Microelectronics And Computer Technology Corporation Method and apparatus for using desoldering material
JPH04336448A (ja) * 1991-05-13 1992-11-24 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP3217539B2 (ja) * 1993-04-30 2001-10-09 キヤノン株式会社 多色画像形成装置
DE19850873A1 (de) * 1998-11-05 2000-05-11 Philips Corp Intellectual Pty Verfahren zum Bearbeiten eines Erzeugnisses der Halbleitertechnik
DE19921230B4 (de) * 1999-05-07 2009-04-02 Giesecke & Devrient Gmbh Verfahren zum Handhaben von gedünnten Chips zum Einbringen in Chipkarten
DE19962763C2 (de) * 1999-07-01 2001-07-26 Fraunhofer Ges Forschung Verfahren zum Vereinzeln eines Wafers

Also Published As

Publication number Publication date
US20050164472A1 (en) 2005-07-28
WO2002089176A3 (de) 2004-03-11
DE10117880B4 (de) 2009-01-29
EP1419524A2 (de) 2004-05-19
DE10117880A1 (de) 2002-10-24
JP2004531061A (ja) 2004-10-07

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