Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J27/00—Ion beam tubes
  • H01J27/02—Ion sources; Ion guns
  • H01J27/08—Ion sources; Ion guns using arc discharge
  • H01J27/14—Other arc discharge ion sources using an applied magnetic field
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
  • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/54—Apparatus specially adapted for continuous coating
  • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32623—Mechanical discharge control means
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3266—Magnetic control means
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32733—Means for moving the material to be treated
  • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
  • H01J37/32761—Continuous moving
  • H01J37/3277—Continuous moving of continuous material
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
  • H05H1/00—Generating plasma; Handling plasma
  • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
  • H05H1/10—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied magnetic fields only, e.g. Q-machines, Yin-Yang, base-ball
  • H05H1/14—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied magnetic fields only, e.g. Q-machines, Yin-Yang, base-ball wherein the containment vessel is straight and has magnetic mirrors

Definitions

• the present invention relates to a dipole ion source.
• related prior art is discussed below.
• the related prior art is grouped into the following sections: extended acceleration channel ion sources, anode layer ion sources, Kaufman type ion sources, Penning discharge type ion sources, facing target sputtering, plasma treatment with a web on a drum, and other prior art methods and apparatuses.
• Extended Acceleration Channel Ion Sources Extended Acceleration Channel Ion Sources
• Extended acceleration channel ion sources have been used as space thrust engines and for industrial ion sources for many years.
• the embodiments described in U.S. Patent No. 5,359,258 to Arkhipov et al. are typical examples of these sources. These sources have a separate electron source to provide electrons to the ion source. Pole erosion is an issue with these sources.
• Anode layer ion sources (see 5,838,120 to Semenkin et al.) are another variation of ion source that places the anode to interrupt a portion of the electron containing magnetic field. These sources do not require a separate electron source. Recently, they have been commercialized for industrial use by Advanced Energy Industries, Inc. and other vendors. Similar to the extended acceleration channel sources, the substrate is placed outside the containing magnetic field, outside the gap between cathode surfaces.
• Kaufman Type Ion Sources Kaufman, working at NASA developed this type of ion source to a high level in the early 1960's (see J. Reece Roth, Industrial Plasma Engineering, Volume 1: Principles, pp200-204, IOP Publishing, Ltd. 1995).
• Penning Discharge Type Ion Sources Several variations of a Penning discharge type ion source are discussed in J. Reece Roth, Industrial Plasma Engineering, Volume 1: Principles, pp 204-208 and Figure 9.31 , IOP Publishing, Ltd. 1995. Facing Target Sputtering
• U.S. Patent No. 4,963,524 to Yamazaki shows a method of producing superconducting material.
• An opposed target arrangement is used with the substrate positioned between the electrodes in the magnetic field.
• the magnetic field is symmetrical between the electrodes and the substrates are in the middle of the gap.
• the Hall current generated within the magnetic field tends to be distorted and broken, and the plasma is extinguished and/or the voltage is much higher.
• a flexible substrate is disposed around an electrified drum with magnetic field means opposite the drum behind grounded or floating shielding. Magnetic field lines are not shown.
• the substrate is continuously moved over a sputter magnetron surface with the surface facing the magnetron located inside the dark space region of the cathode. In this way, the magnetic field of the magnetron passes through the substrate and is closed over the substrate surface constricting the plasma onto the surface.
• U.S. Patent No.4,631 ,106 to Nakazato et al. magnets are located under a wafer to create a magnetron type field parallel to the wafer. The magnets are moved to even out the process. The opposed plate is grounded, and the wafer platen is electrified.
• U.S. Patent No. 4,761 ,219 to Sasaki et al. shows a magnetic field passing through a gap with the wafer on one electrode surface.
• U.S. Patent No. 5,225,024 to Hanley et al. has a mirror magnetic field where a cusp field is generated to create flux lines parallel to the wafer surface.
• U.S. Patent No. 5,437,725 to Schuster et al. a metal web is drawn over a drum containing magnets.
• a dipole ion source comprising a substrate; a pole, wherein a gap is defined between the substrate and the pole; an unsymmetrical mirror magnetic field comprising a compressed end and a less compressed end, wherein the substrate is positioned in the less compressed end of the magnetic field; and an anode creating electric fields from both the substrate and pole surfaces that penetrate the magnetic field and confine electrons in a continuous Hall current loop, wherein the unsymmetrical magnetic field serves to focus an ion beam on the substrate.
• FIG. 1 shows a section view of a dipole ion source apparatus of a preferred embodiment.
• FIG. 2 shows an isometric view of the apparatus of FIG. 1.
• FIG. 3 shows a section view of a dipole ion source for wafer processing.
• FIG. 4 shows a section view of a dipole ion source for treating planar substrates.
• FIG. 5 shows a section view of a dipole ion source employing a central magnet to return the field.
• FIG. 6 shows a section view of an apparatus for treating flexible web substrates.
• FIG. 7 shows a section view of another plasma apparatus for treating flexible web substrates.
• FIG. 1 shows a section view of a dipole ion source.
• the substrate 1 is a high permeability, electrically conductive material such as steel sheet.
• a magnetic field is set up in the gap between the substrate 1 and magnetic pole 3 with permanent magnet 2.
• Pole 3 is electrically conductive and is connected to ground as is substrate 1.
• Pole 3 is water cooled through gun drilled hole 7.
• Anode 4 is water cooled with brazed on tubes 5 and is attached to support plate 6 with screws 13.
• Magnet 2 is an electrical insulator.
• the anode and magnet assembly are supported over the substrate 1 with a bracket not shown.
• the fundamental operation of the dipole ion source takes advantage of the understanding that the electron Hall current can be contained within a simple dipole magnetic field rather than a racetrack shaped field.
• the source operates in a diffuse or plasma mode.
• a conductive plasma 9 fills the magnetic confined region as shown, and the electric fields shift to the sheaths at the grounded and anode surfaces.
• the conductive plasma disappears, and a distinct plasma beam 10 can be seen emanating from anode layer region 8.
• the static electric fields 11 dictate the electron and ion flows.
• This mode is termed the collimated mode.
• the voltage of the source is more directly proportional to power requiring the higher voltage DC supply.
• the diffuse mode voltages in the 300-600 volt range are typical.
• the diffuse mode presents difficulties. Firstly, the cathode poles tend to be sputter eroded contaminating the substrate and requiring expensive maintenance. Secondly, the intense plasma region is separated from the substrate. This is because the source plasma remains inside the racetrack opening between the cathode surfaces. With the dipole ion source of this preferred embodiment, the plasma is in direct contact with the substrate. As shown in FIG. 1, the substrate is a pole of the source. This allows a high degree of plasma interaction with the substrate increasing processing rates.
• Pole erosion by sputtering is greatly reduced in both the diffuse and collimated modes. Pole 3 erosion is reduced due to two design factors. The magnetic mirror effect tends to push electrons and ions away from the pole reducing plasma contact. The unsymmetrical magnetic field focuses plasma ions ' toward the substrate rather than the exposed pole. Also, the location of the anode close to pole 3 directionally points the ion flow toward the substrate. Additionally, because one of the two poles is the substrate, there is one less pole to erode.
• the source is a simple, economic design. By confining the electron Hall current in a simple dipole magnetic field, long sources covering wide substrates can be readily constructed. Complex racetrack magnetic fields are not needed.
• the source of FIG. 1 can easily be extended to cover a 2 or 3 meter wide substrate.
• FIG. 2 shows an isometric view of the source depicted in FIG. 1. This shows how the source can be extended to process wide substrate widths.
• the anode 4 cover has been left off to show the internal magnet 2 and pole 3.
• Water cooling tube 5 passes around both sides of anode 4.
• the end plates of anode 4 are cooled by conduction through the anode material (such as copper) to the water cooled side regions.
• Plasma 9 is contained within electron magnetizing field region 12. While magnetic fields are present around and behind the plasma source, electric fields are not present to light a plasma. For safety, a grounded shield is recommended around the entire source. This is not shown for clarity, and this form of shielding is well known in the art.
• FIG. 3 shows an implementation of the preferred embodiment for semiconductor wafer processing.
• the wafer 21 is placed on platen 20.
• Platen 20 is made of a high permeability material.
• An unsymmetrical magnetic mirror field is generated through the wafer across a gap with magnet 22, shunt 26, and magnets 24. The mirror field is designed to expand out from magnet 22 over wafer 21.
• Cover 23 protects magnet 22 from the plasma and can be left either floating or can be tied to power supply
• Magnet 22 is an electrical insulator. When cover 23 is tied to power supply 34, the source takes the form of a Penning cell. This is a very efficient magnetic plasma containment bottle. By connecting magnetic shunt 26 as the opposed electrode to platen 20, the required electric field lines are created penetrating the magnetic field lines 32 to contain the Hall current within field 32. Magnet 22 is a bar magnet long enough to span the width of the wafer.
• the showerhead shape of the magnetic field produces a directed flow of ions toward the wafer surface. This can be tailored to suit the application. By enlarging the gap between magnet 22 and platen 20, the showerhead shape changes to an onion shape. This changes the focusing curve of the magnetic field to redirect the ion flow into the center of the gap, and ion impingement on the wafer is reduced. The ability to control the ion impingement rate and angle of impingement is a benefit of this preferred embodiment.
• FIG. 4 shows a section view of a dipole ion source for processing planar electrically insulating substrates such as glass.
• a window 95 constructed of non-magnetic, electrically conductive metal is positioned over the substrate. The magnetic field is created per these preferred embodiments through the gap between the substrate 101 and pole
• FIG. 5 shows another version of the preferred embodiment.
• the primary mirror field 8 is set up around the periphery of the return magnetic field 10.
• Magnets 4 and 5 and shunts 2 and 3 are used to create the magnetic fields as shown.
• Shunt 2 is positioned under the substrate and is connected as part of one electrode of power supply 7.
• Substrate 1 is a dielectric material such as a polymer web and power supply 7 is an AC supply of sufficient frequency to pass current through the substrate 1.
• Cover 12 is electrically conductive and is connected to shunt 3 and power supply 7.
• Anode 6 circumvents the source as shown and is the opposed electrode to cover 12 and, effectively, substrate 1. Again, this source can be operated in either the collimated or diffuse modes.
• the anode 6 is shown in this view to be removed outside of the magnetic field lines .8 that pass through electrodes 12 and 2. This source will therefore operate less efficiently in the collimated mode and may require a separate source of electrons 17. Note that the electrons must be inserted between the containing magnetic field 8 and the anode for proper operation.
• FIG. 6 is a section view of a source employing a central return magnetic field.
• a flexible web substrate 3 is supported by rollers 1 and 2.
• Non-rotating "magnetron" magnet arrays 20 and 21 create magnetic fields 13 and 22 as shown.
• Magnetic field 13 forms a racetrack endless loop around field 22.
• Anode electrode 12 circumvents roll 1 and is a water cooled tube.
• Rolls 1 and 2 are connected via brushes (not shown) to power supply 23.
• Power supply 23 is an AC power supply of sufficient frequency to pass current effectively through dielectric substrate material 3. If the substrate is electrically conductive, a DC power supply can be used.
• FIG. 7 shows a section view of another web plasma source. This source is designed to operate in the diffuse mode.
• Two rolls 201 and 202 support web substrate 200.
• Roll 201 is a 400 series (magnetic) stainless steel roller.
• Roll 202 is constructed of non-magnetic stainless steel (300 series) and has magnets 206 and 208 and shunt 207 positioned inside the roller.
• Magnets 206 and 208 and shunt 207 do not rotate with roller 202.
• Rollers 201 and 202 are water cooled by known techniques. Unsymmetrical magnetic field 211 is created in the gap by the magnets in roller 202 and magnets 204 and shunt 203.
• Rolls 201 and 202 are connected to one side of power supply 212 with shunt 205 and the chamber ground as the opposed electrode. Shunt 205 also acts to collect stray magnetic field from the permanent magnet region.
• power supply 212 is turned on and with gas pressure of between 1 and 100 mTorr, a plasma 210 lights between rollers 201 and 202.
• the conductive plasma 210 created can be used to plasma coat, plasma treat or etch the web substrate. Note that no Hall current ring is apparent in the diffuse mode of operation as the bright plasma 210 overwhelms a visible Hall ring.
• roll 201 can be made of a non-magnetic material. While less magnetic field will pass across the gap into roll 201 , with strong magnets 206, 208, etc. sufficient field will be present to confine a plasma per the inventive method.
• roller 202 (and subsequently substrate 200) may be left floating or grounded. Switch 215 is shown for the purpose of changing the electrical connection to roll 202.

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• Combustion & Propulsion (AREA)
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• Chemical Vapour Deposition (AREA)
• Physical Vapour Deposition (AREA)
• ing And Chemical Polishing (AREA)
• Analysing Materials By The Use Of Radiation (AREA)
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• 2002
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