WO2002073657A3 - Halbleiterspeicherzelle mit grabenkondensator und verfahren zu ihrer herstellung - Google Patents
Halbleiterspeicherzelle mit grabenkondensator und verfahren zu ihrer herstellung Download PDFInfo
- Publication number
- WO2002073657A3 WO2002073657A3 PCT/DE2002/000788 DE0200788W WO02073657A3 WO 2002073657 A3 WO2002073657 A3 WO 2002073657A3 DE 0200788 W DE0200788 W DE 0200788W WO 02073657 A3 WO02073657 A3 WO 02073657A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- trench
- production
- semiconductor memory
- memory location
- epitaxially grown
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020037011590A KR100631092B1 (ko) | 2001-03-09 | 2002-03-05 | 반도체 메모리 셀 및 그 제조 방법 |
EP02727188A EP1366517A2 (de) | 2001-03-09 | 2002-03-05 | Halbleiterspeicherzelle mit grabenkondensator und verfahren zu ihrer herstellung |
JP2002572609A JP2004523918A (ja) | 2001-03-09 | 2002-03-05 | 半導体メモリセルおよびその製造方法 |
US10/657,928 US6828192B2 (en) | 2001-03-09 | 2003-09-10 | Semiconductor memory cell and method for fabricating the memory cell |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10111498.2 | 2001-03-09 | ||
DE10111498 | 2001-03-09 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/657,928 Continuation US6828192B2 (en) | 2001-03-09 | 2003-09-10 | Semiconductor memory cell and method for fabricating the memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002073657A2 WO2002073657A2 (de) | 2002-09-19 |
WO2002073657A3 true WO2002073657A3 (de) | 2003-05-22 |
Family
ID=7676944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/000788 WO2002073657A2 (de) | 2001-03-09 | 2002-03-05 | Halbleiterspeicherzelle mit grabenkondensator und verfahren zu ihrer herstellung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6828192B2 (de) |
EP (1) | EP1366517A2 (de) |
JP (1) | JP2004523918A (de) |
KR (1) | KR100631092B1 (de) |
TW (1) | TW554520B (de) |
WO (1) | WO2002073657A2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10136333A1 (de) | 2001-07-26 | 2003-03-06 | Infineon Technologies Ag | Verfahren zur Herstellung eines Vertikaltransistors in einem Graben sowie Vertikaltransistor |
TW589716B (en) * | 2003-06-10 | 2004-06-01 | Nanya Technology Corp | Method of fabricating memory device having a deep trench capacitor |
TWI229940B (en) * | 2004-01-30 | 2005-03-21 | Nanya Technology Corp | Memory cell with a vertical transistor and fabrication method thereof |
US7223653B2 (en) * | 2004-06-15 | 2007-05-29 | International Business Machines Corporation | Process for forming a buried plate |
DE102004040046B4 (de) * | 2004-08-18 | 2008-04-30 | Qimonda Ag | Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen, der über einen vergrabenen Kontakt einseitig mit einem Substrat elektrisch verbunden ist, insbesondere für eine Halbleiterspeicherzelle, und entsprechender Grabenkondensator |
US20060151845A1 (en) * | 2005-01-07 | 2006-07-13 | Shrinivas Govindarajan | Method to control interfacial properties for capacitors using a metal flash layer |
US20060151822A1 (en) * | 2005-01-07 | 2006-07-13 | Shrinivas Govindarajan | DRAM with high K dielectric storage capacitor and method of making the same |
US7316962B2 (en) | 2005-01-07 | 2008-01-08 | Infineon Technologies Ag | High dielectric constant materials |
US20060228864A1 (en) * | 2005-04-12 | 2006-10-12 | Promos Technologies Inc. | Semiconductor devices having a bottle-shaped deep trench capacitor and methods for making the same using Epi-Si growth process |
US7312114B2 (en) * | 2005-04-27 | 2007-12-25 | Infineon Technologies Ag | Manufacturing method for a trench capacitor having an isolation collar electrically connected with a substrate on a single side via a buried contact for use in a semiconductor memory cell |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19620625C1 (de) * | 1996-05-22 | 1997-10-23 | Siemens Ag | DRAM-Zellenanordnung und Verfahren zu deren Herstellung |
EP0971414A1 (de) * | 1998-06-15 | 2000-01-12 | Siemens Aktiengesellschaft | Grabenkondensator mit Isolationskragen und vergrabenen Kontakt und entsprechendes Herstellungsverfahren |
WO2000035006A1 (en) * | 1998-12-04 | 2000-06-15 | International Business Machines Corporation | Dram cell having an annular signal transfer region |
DE10045694A1 (de) * | 2000-09-15 | 2002-04-04 | Infineon Technologies Ag | Halbleiterspeicherzelle mit Grabenkondensator und Auswahltransistor und Verfahren zu ihrer Herstellung |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5360758A (en) | 1993-12-03 | 1994-11-01 | International Business Machines Corporation | Self-aligned buried strap for trench type DRAM cells |
US5641694A (en) | 1994-12-22 | 1997-06-24 | International Business Machines Corporation | Method of fabricating vertical epitaxial SOI transistor |
US5543348A (en) | 1995-03-29 | 1996-08-06 | Kabushiki Kaisha Toshiba | Controlled recrystallization of buried strap in a semiconductor memory device |
US5827765A (en) | 1996-02-22 | 1998-10-27 | Siemens Aktiengesellschaft | Buried-strap formation in a dram trench capacitor |
US6566177B1 (en) * | 1999-10-25 | 2003-05-20 | International Business Machines Corporation | Silicon-on-insulator vertical array device trench capacitor DRAM |
-
2002
- 2002-03-05 KR KR1020037011590A patent/KR100631092B1/ko not_active IP Right Cessation
- 2002-03-05 WO PCT/DE2002/000788 patent/WO2002073657A2/de active Application Filing
- 2002-03-05 JP JP2002572609A patent/JP2004523918A/ja active Pending
- 2002-03-05 EP EP02727188A patent/EP1366517A2/de not_active Withdrawn
- 2002-03-08 TW TW091104370A patent/TW554520B/zh active
-
2003
- 2003-09-10 US US10/657,928 patent/US6828192B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19620625C1 (de) * | 1996-05-22 | 1997-10-23 | Siemens Ag | DRAM-Zellenanordnung und Verfahren zu deren Herstellung |
EP0971414A1 (de) * | 1998-06-15 | 2000-01-12 | Siemens Aktiengesellschaft | Grabenkondensator mit Isolationskragen und vergrabenen Kontakt und entsprechendes Herstellungsverfahren |
WO2000035006A1 (en) * | 1998-12-04 | 2000-06-15 | International Business Machines Corporation | Dram cell having an annular signal transfer region |
DE10045694A1 (de) * | 2000-09-15 | 2002-04-04 | Infineon Technologies Ag | Halbleiterspeicherzelle mit Grabenkondensator und Auswahltransistor und Verfahren zu ihrer Herstellung |
Also Published As
Publication number | Publication date |
---|---|
EP1366517A2 (de) | 2003-12-03 |
WO2002073657A2 (de) | 2002-09-19 |
KR100631092B1 (ko) | 2006-10-02 |
JP2004523918A (ja) | 2004-08-05 |
TW554520B (en) | 2003-09-21 |
US20040157389A1 (en) | 2004-08-12 |
US6828192B2 (en) | 2004-12-07 |
KR20030088449A (ko) | 2003-11-19 |
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