WO2002032622A1 - A method to avoid striae in euv lithography mirrors - Google Patents

A method to avoid striae in euv lithography mirrors Download PDF

Info

Publication number
WO2002032622A1
WO2002032622A1 PCT/US2001/029100 US0129100W WO0232622A1 WO 2002032622 A1 WO2002032622 A1 WO 2002032622A1 US 0129100 W US0129100 W US 0129100W WO 0232622 A1 WO0232622 A1 WO 0232622A1
Authority
WO
WIPO (PCT)
Prior art keywords
glass material
mirror
top face
produce
striae
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/029100
Other languages
English (en)
French (fr)
Inventor
Claude L. Davis, Jr.
Michael E. Best
Mary J. Edwards
Thomas W. Hobbs
Gregory L. Murray
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Priority to JP2002535847A priority Critical patent/JP5142444B2/ja
Priority to EP01979254A priority patent/EP1324857A4/en
Publication of WO2002032622A1 publication Critical patent/WO2002032622A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B13/00Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor
    • B24B13/06Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor grinding of lenses, the tool or work being controlled by information-carrying means, e.g. patterns, punched tapes, magnetic tapes
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/14Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1453Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/14Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1469Means for changing or stabilising the shape or form of the shaped article or deposit
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B23/00Re-forming shaped glass
    • C03B23/02Re-forming glass sheets
    • C03B23/023Re-forming glass sheets by bending
    • C03B23/025Re-forming glass sheets by bending by gravity
    • C03B23/0252Re-forming glass sheets by bending by gravity by gravity only, e.g. sagging

Definitions

  • the present invention relates to extreme ultraviolet (EUV) mirrors for EUV lithography. More particularly, it relates to methods for manufacturing EUV mirrors.
  • EUV extreme ultraviolet
  • EUVL Extreme ultraviolet lithography
  • EUVL uses extreme ultraviolet (EUV, also called soft X-ray) radiation with a wavelength in the range of 10 to 14 nanometers (nm) to perform the imaging.
  • EUV extreme ultraviolet
  • optical lithography has been the lithographic technique of choice in the high-volume manufacture of integrated circuits (IC).
  • IC integrated circuits
  • NGL Next-Generation Lithographies
  • EUVL is similar to the optical lithography.
  • the basic optical design for an EUVL system is similar to that of an optical lithographic system. It comprises a light source 1, a condenser 2, a mask (reticle) 4 on a mask stage 5, an optical system 6, and a wafer 7 on a wafer stage 8.
  • Both EUV and optical lithographies use optical systems (cameras) to project images on the masks onto substrates which comprise silicon wafers coated with photo resists.
  • the apparent similarity stops here. Because EUV is strongly absorbed by virtually all materials, EUV imaging must be performed in vacuum, which is achieved by enclosing the system in a chamber 3.
  • the chamber 3 might be further partitioned into different compartments 10 and 20, which have their own vacuum systems. Because EUV is absorbed by most materials, there are no suitable lenses to focus and project an image on mask 4 onto a substrate (wafer) 7. As a result, it is necessary to operate EUVL in a reflective mode instead of a transmissive mode. In the reflective mode, light is reflected from mirrors (not shown; inside the optical system 6), instead of being transmitted through lenses. Even with reflective optics, there are not many materials capable of reflecting EUV. In order to achieve reasonable reflectivities at near normal incidence (i.e., an incident beam landing on the surface of a mirror at an angle close to normal to the surface), the surface of a mirror is typically coated with multilayer, thin-film coatings. These multilayer, thin- film coatings reflect EUV in a phenomenon known as distributed Bragg reflection.
  • the multilayer coatings for the reflective surfaces in EUVL imaging system consist of a large number of alternating layers of materials having dissimilar EUV optical constants. These multilayers provide a resonant reflectivity when the period of the layers is approximately ⁇ /2, where ⁇ is the wavelength.
  • the most promising EUV multilayers are coatings of alternating layers of molybdenuum (Mo) and silicon (Si). These layers are deposited with magnetron sputtering. Each layer of Mo or Si is coated to a thickness of ⁇ /4 of the EUV light so that it will have a periodicity of ⁇ /2. In this type of reflector, a small portion of the incident light is reflected from each silicon surface.
  • the thickness of the layers causes the reflected light waves to interfere constructively. The more layers there are, the more light will be reflected. However, imperfections in the surface coating will eventually diminish the reflectivity return of more coatings.
  • most mirrors in EUVL systems have around 40 alternating layer pairs of Mo:Si. Furthermore, most of these Mo:Si multilayers are optimized to function best with wavelengths at around 13.4 nm, which is the wavelength of a typical laser plasma light source.
  • a typical EUVL optical system or camera (see 6 in FIG. 1) consists of several mirrors (e.g., a four-mirror ring-field camera shown in FIG. 2).
  • the mirrors that comprise the camera must have a very high degree of perfection in surface figure and surface finish in order to achieve diffraction limited imaging. It is predicted that the surface figure (basic shape) of each mirror must be accurate to 0.25 nm rms (root mean square) deviation, or better. In addition to surface figure, stringent requirement must also be placed on the finish of the surfaces.
  • the challenge for a fabricator of optics for EUVL is to achieve the desired levels of surface figure accuracy and surface finish simultaneously.
  • FIG. 2 illustrates a typical prior art four-mirror optical system for EUVL application.
  • Such an optical system is used to project and reduce an image from a mask onto a wafer.
  • the reduction achieved by the optical system permits the printing of a image smaller than that on the mask onto a wafer.
  • the projection operation is typically carried out in a step-and-scan process.
  • a light beam from a light source (see 1 and 2 in FIG. 1) is used to scan the image on the mask.
  • the light beam L reflected from the mask is further reflected by four mirrors Ml, M2, M3 and M4 in succession to project and reduce the image from the mask onto the wafer.
  • mirrors should be substantially invariant to environmental changes, e.g., temperature changes.
  • these mirrors be made of light weight materials with very low coefficients of thermal expansion (CTE).
  • CTE coefficients of thermal expansion
  • ULE glass has a CTE of about 0+30 ppb/°C over the temperature range of 5 to 35 °C.
  • the CTE in ULE glass is a function of the titanium concentration.
  • ULE glass typically contains about 6 to 8 wt. % of TiO 2 . Compositions containing about 7 wt. % TiO 2 have near zero CTE.
  • ULE glass is also unique in that it hAs no crystalline phase. In other words, ULE glass is completely amorphous.
  • ULE glass is a high temperature glass which makes it unsuitable for manufacturing by conventional means. Instead of being poured, it is fabricated by a flame hydrolysis fused glass process which is similar in scope to chemical vapor deposition.
  • ULE glass is formed in layer deposits. This means ULE glass inherently has striae, though these striae are not apparent and do not affect most applications. Although ULE glass has been polished to 0.5 A rms (root mean square) surface roughness, the striae may present problems for stringent applications like EUV mirrors. For example, it can create a mid frequency surface structure that would cause image degradation in mirrors used in the projection systems for EUV microlithography.
  • FIG. 3A illustrates a piece of ULE " glass 31, in which striae 32 are shown.
  • FIG. 3B shows a cylinder of ULE glass 33 with its top ground to give a convex surface. It is apparent that different layers of striae planes are cut across, leaving approximately concentric circles of striae edges 34. This is not a problem for applications where the source light is in the range of visible to infrared. However, in EUV lithography, which uses lights with wavelengths around 13 nanometer (nm), these striae edges 34 may manifest themselves as small ridges. These can cause aberrations which would degrade any images projected within the optical train.
  • ULE glass Although this problem is illustrated with ULE glass, the problem is not unique to this glass.
  • the same problem due to striae will be encountered in any material that is prepared by gradual deposition of newly formed material onto the materials, like the flame hydrolysis process in the formation of ULE glass.
  • Such materials which inherently have striae, will be generally referred to as the ULE M glass-like materials herein.
  • Embodiments of the invention relate to methods for manufacturing mirrors for use in EUV lithography. Some embodiments include sagging a plate of a glass material to produce a mirror blank; and polishing a top face of the mirror blank to produce a polished mirror. Other embodiments include grinding a top face of a piece of a glass material; sagging a plate of the glass material over the top face of the piece to produce a mirror blank; and polishing a top face of the mirror blank to produce a polished mirror.
  • the glass material may be ultra low expansion glass material with a coefficient of thermal expansion of no more than 30 parts per billion per degree Celsius in a temperature range of 5 to 35 °C.
  • FIG. 1 is a diagram of a prior art EUVL system.
  • FIG. 2 is a diagram illustrating a prior art four-mirror optic system for an
  • FIG. 3 A is a diagram illustrating a piece of a ULE glass-like material having striae.
  • FIG. 3B illustrates a cylindrical piece of a ULE glass-like material. The top of the cylinder has been ground to a convex configuration.
  • FIG. 4A is a diagram illustrating a side view of a thin plate of a ULE glasslike material showing striae on the side.
  • FIG. 4B shows the same side view after the thin plate was sagged to have a curved surface.
  • FIG. 5A is a diagram illustrating a cylinder of a ULETM glass-like material having striae planes perpendicular to the axis of the cylinder.
  • FIG. 5B is a convex mirror blank prepared from the cylinder shown in FIG. 5A, showing the concentric striae ridges on the convex surface.
  • FIG. 6k shows a top plate made of a ULETM glass-like material about to be attached to a mirror base with a convex top face.
  • FIG. 6B shows a mirror blank with the top plate annealed to the base.
  • Embodiments of the invention relate to methods for manufacturing EUV mirrors from the ULE glass-like materials.
  • the invention significantly reduces the striae effects which might degrade image qualities.
  • Some embodiments relate to methods of manufacturing thin-plate mirrors.
  • FIG. 4A illustrates a side view of a thin plate 41, showing striae 42 on the side.
  • the striae planes are parallel with the surfaces of the plate. If the surface of this plate were to be ground to the desired curvature, the grinding would cut across striae planes, and the above-mentioned problem will be unavoidable.
  • the thin plate 41 is "sagged" to the desired curved surface to produce a mirror blank 43, in which the striae planes 44 remain substantially parallel to the sagged, curved surface of the mirror. Because this sagged, curved surface has a near net shape of the final mirror, only minor polishing and grinding are required to produced a finished mirror.
  • Sagging refers to the process of thermal deformation of a plate-like glass material.
  • the polishing or lapping of a finished mirror may be achieved by any method known in the art.
  • coating of molybdenum (Mo) and silicon (Si) can be accomplished with either magnetron sputtering, ion-beam sputtering, or other suitable methods.
  • magnetron sputtering ion-beam sputtering, or other suitable methods.
  • these mirrors should be coated with multiple alternating layers of Mo and Si. Polishing as used herein may include the Mo:Si coating step.
  • FIG. 1 Another embodiments of the invention relate to methods of manufacturing thick mirrors. With thick mirrors, the above-described sagging method is not applicable. When a mirror is sagged over a form, the material flows. This makes it difficult to maintain enough material to have a desired thickness. This difficulty can be overcome by using a combination of sagging and grinding.
  • FIG. 5A illustrates a thick cylindrical plate/block 53 showing that striae planes 54 are perpendicular to the axis of the cylinder.
  • this cylindrical block 53 is first ground to provide a top face with a shape near the net shape of the mirror.
  • a thin plate may be annealed (sagged) to this base.
  • a thin plate 61 with striae planes 62 parallel with the surfaces of the plate may be sagged over the base 63, which is like the one shown in FIG. 5B.
  • the mirror base 63 has a top face with a near net shape and striae ridges 64 due to cut through of striae planes.
  • Mirror 65 has a top face devoid of striae ridges because this top face is the top face of the thin plate 61 as shown in FIG. 6A.
  • annealing the top late 61 to the base 63 include thermal fusion, frit fusion, and annealing using an adhesive (i.e., adhesion).
  • thermal fusion the top plate 61 and the base 63 are fused (joined) by applying thermal energy to melt the regions at the joint.
  • frit fusion low-melting frits (powders) of a glass material are added to the joint to "glue" the pieces together when heated.
  • U.S. Patent No. 6,048,811 which was assigned to the same assignee herein, discloses a frit fusion process suitable for this process.
  • the annealing may be achieve by adhesion, i.e., by applying suitable adhesive materials at the joint.
  • suitable adhesive materials include, but not limited to, epoxies, silicone adhesives, and solder or bonding materials which, upon heating, will melt and form a bond between the base and the faceplate.
  • the faceplate is constructed of a material having a CTE closely equivalent or identical to that of the base, the adhesive should ideally match the CTE.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Glass Melting And Manufacturing (AREA)
PCT/US2001/029100 2000-10-13 2001-09-18 A method to avoid striae in euv lithography mirrors Ceased WO2002032622A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002535847A JP5142444B2 (ja) 2000-10-13 2001-09-18 Euvリソグラフィミラーにおいて脈理を回避する方法
EP01979254A EP1324857A4 (en) 2000-10-13 2001-09-18 METHOD FOR AVOIDING STRIKES MIRRORING ON EUV LITHOGRAPHY

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24030300P 2000-10-13 2000-10-13
US60/240,303 2000-10-13

Publications (1)

Publication Number Publication Date
WO2002032622A1 true WO2002032622A1 (en) 2002-04-25

Family

ID=22906005

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/029100 Ceased WO2002032622A1 (en) 2000-10-13 2001-09-18 A method to avoid striae in euv lithography mirrors

Country Status (4)

Country Link
US (1) US6776006B2 (enExample)
EP (1) EP1324857A4 (enExample)
JP (1) JP5142444B2 (enExample)
WO (1) WO2002032622A1 (enExample)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004089838A1 (en) * 2003-04-03 2004-10-21 Asahi Glass Company Limited Silica glass containing tio2 and optical material for euv lithography
WO2004092082A1 (ja) * 2003-04-11 2004-10-28 Nikon Corporation SiO2-TiO2系ガラスの製造方法、SiO2-TiO2系ガラス及び露光装置
DE10318935A1 (de) * 2003-04-26 2004-11-18 Schott Glas Verfahren zur Herstellung von Glaskörpern aus dotiertem Quarzglas
US6829908B2 (en) 2002-02-27 2004-12-14 Corning Incorporated Fabrication of inclusion free homogeneous glasses
US6832493B2 (en) 2002-02-27 2004-12-21 Corning Incorporated High purity glass bodies formed by zero shrinkage casting
DE102004015766A1 (de) * 2004-03-23 2005-10-13 Schott Ag SiO2-TiO2-Glas mit erhöhter Strahlungsbeständigkeit
EP1471038A3 (de) * 2003-04-26 2005-11-23 Schott Ag Verfahren zur Herstellung von Glaskörpern aus dotiertem Quarzglas
US7155936B2 (en) 2003-08-08 2007-01-02 Corning Incorporated Doped silica glass articles and methods of forming doped silica glass boules and articles
EP1795506A1 (en) 2005-12-08 2007-06-13 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass and making method, euv lithographic member and photomask substrate
EP2003098A1 (en) * 2007-06-06 2008-12-17 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass for nanoimprint molds
EP2014624A3 (en) * 2007-06-06 2010-04-21 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass for nanoimprint molds
EP2146244A4 (en) * 2007-05-09 2010-04-28 Nikon Corp FOTOMASKENSUBSTRAT, ELEMENT FOR FORMING A FOTOMASKENSUBSTRATS, METHOD FOR THE PRODUCTION OF A FOTOMASKE, FOTOMASKE AND EXPOSURE PROCESSES WITH THE FOTOMASKE
WO2011006759A1 (de) * 2009-07-15 2011-01-20 Heraeus Quarzglas Gmbh & Co. Kg Meniskuslinse aus synthetischem quarzglas und verfahren zu ihrer herstellung
JP2013177299A (ja) * 2003-04-03 2013-09-09 Asahi Glass Co Ltd TiO2を含有するシリカガラスの製造方法
EP2757078A1 (en) 2013-01-22 2014-07-23 Shin-Etsu Chemical Co., Ltd. Euv lithography member, making method, and titania-doped quartz glass
KR20140095422A (ko) * 2013-01-24 2014-08-01 신에쯔 세끼에이 가부시키가이샤 실리카티타니아 유리, 실리카티타니아 유리의 제조방법 및 실리카티타니아 유리의 선별방법

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3264827B2 (ja) 1995-07-26 2002-03-11 株式会社エヌ・ティ・ティ・データ Lanテスタ
DE10127086A1 (de) * 2001-06-02 2002-12-05 Zeiss Carl Vorrichtung zur Reflexion von elektromagnetischen Wellen
JP4158009B2 (ja) * 2001-12-11 2008-10-01 信越化学工業株式会社 合成石英ガラスインゴット及び合成石英ガラスの製造方法
US7053017B2 (en) * 2002-03-05 2006-05-30 Corning Incorporated Reduced striae extreme ultraviolet elements
US20040025542A1 (en) * 2002-06-07 2004-02-12 Ball Laura J. Method of making extreme ultraviolet lithography glass substrates
JP2004131373A (ja) * 2002-09-09 2004-04-30 Corning Inc シリカ・チタニア極端紫外線光学素子の製造方法
KR100556141B1 (ko) * 2003-03-27 2006-03-03 호야 가부시키가이샤 마스크 블랭크용 유리 기판 제조 방법 및 마스크 블랭크제조 방법
JP4792706B2 (ja) * 2003-04-03 2011-10-12 旭硝子株式会社 TiO2を含有するシリカガラスおよびその製造方法
DE102006020991B4 (de) * 2006-05-04 2009-09-10 Carl Zeiss Ag Verfahren zum Herstellen eines Formkörpers aus Glas oder Glaskeramik
US20080266651A1 (en) * 2007-04-24 2008-10-30 Katsuhiko Murakami Optical apparatus, multilayer-film reflective mirror, exposure apparatus, and device
JP5287271B2 (ja) * 2009-01-13 2013-09-11 旭硝子株式会社 TiO2を含有するシリカガラスの成型方法およびそれによって成型されたEUVリソグラフィ用光学部材
US8857214B2 (en) * 2011-11-18 2014-10-14 Sunedison Semiconductor Limited Methods for producing crucibles with a reduced amount of bubbles
US8524319B2 (en) 2011-11-18 2013-09-03 Memc Electronic Materials, Inc. Methods for producing crucibles with a reduced amount of bubbles
CN103949952B (zh) * 2014-02-26 2016-04-13 四川欧瑞特光电科技有限公司 一种大外径变形镜主镜的加工方法
DE112015004415T5 (de) 2014-09-25 2017-07-13 Nantong Schmidt Opto-Electrical Technology Co. Ltd. Herstellungsverfahren für leichtgewichtige grossformatige teleskopspiegelrohlinge und gemäss demselben hergestellte spiegelrohlinge
DE102016217428A1 (de) 2016-09-13 2017-09-07 Carl Zeiss Smt Gmbh Verfahren zum Bearbeiten eines Werkstücks bei der Herstellung eines optischen Elements
CN111002115A (zh) * 2020-01-16 2020-04-14 程凯芬 一种防眩光玻璃及加工方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958052A (en) * 1974-06-12 1976-05-18 Corning Glass Works Subsurface-fortified glass laminates
US4130437A (en) * 1978-04-12 1978-12-19 Corning Glass Works Photochromic glasses suitable for simultaneous heat treatment and shaping
US4231827A (en) * 1979-03-29 1980-11-04 Ppg Industries, Inc. Press polishing and laminating plastic transparencies using polycarbonate pressing plates
US4282021A (en) * 1978-10-02 1981-08-04 Corning Glass Works Method of making photochromic glasses suitable for simultaneous heat treatment and shaping
US5750448A (en) * 1995-12-12 1998-05-12 Schott Glaswerke Copper(II) oxide-containing aluminophosphate glasses

Family Cites Families (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2272342A (en) 1934-08-27 1942-02-10 Corning Glass Works Method of making a transparent article of silica
BE438752A (enExample) * 1939-04-22
US2239551A (en) 1939-04-22 1941-04-22 Corning Glass Works Method of making sealing glasses and seals for quartz lamps
US2482698A (en) * 1943-05-06 1949-09-20 American Optical Corp Optical lens means having a nonspherical refracting surface
US3130029A (en) * 1959-06-23 1964-04-21 Bausch & Lomb Method for making fused multifocal lenses
US3155748A (en) * 1960-08-03 1964-11-03 American Optical Corp Method of making optical components
US3560182A (en) * 1968-01-24 1971-02-02 Ppg Industries Inc Bending glass sheets
US3930824A (en) * 1974-07-19 1976-01-06 Metrologic Instruments, Inc. Method of forming laser components
US4002512A (en) 1974-09-16 1977-01-11 Western Electric Company, Inc. Method of forming silicon dioxide
JPS54127284A (en) 1978-03-27 1979-10-03 Cho Lsi Gijutsu Kenkyu Kumiai Method of forming reflective pattern
US4344816A (en) 1980-12-19 1982-08-17 Bell Telephone Laboratories, Incorporated Selectively etched bodies
JPS57106031A (en) 1980-12-23 1982-07-01 Toshiba Corp Transferring device for fine pattern
JPS60173551A (ja) 1984-02-20 1985-09-06 Hideki Matsumura X線など光線の反射投影によるパタ−ン転写法
JPS61291427A (ja) * 1985-06-17 1986-12-22 Hoya Corp モ−ルドレンズおよびその製造方法
US5146482A (en) 1985-08-15 1992-09-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Multispectral variable magnification glancing incidence x-ray telescope
US5016265A (en) 1985-08-15 1991-05-14 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Variable magnification variable dispersion glancing incidence imaging x-ray spectroscopic telescope
US4891830A (en) 1986-03-28 1990-01-02 Shimadzu Corporation X-ray reflective mask and system for image formation with use of the same
DE3752388T2 (de) 1986-07-11 2006-10-19 Canon K.K. Verkleinerndes Projektionsbelichtungssystem des Reflexionstyps für Röntgenstrahlung
US5165954A (en) 1986-09-02 1992-11-24 Microbeam, Inc. Method for repairing semiconductor masks & reticles
JPS63142301A (ja) 1986-12-04 1988-06-14 Nikon Corp 塁積効果の少ない光学薄膜
JPS63142302A (ja) 1986-12-04 1988-06-14 Nikon Corp レ−ザ−耐力の高い光学薄膜
EP0279670B1 (en) 1987-02-18 1997-10-29 Canon Kabushiki Kaisha A reflection type mask
US4776696A (en) 1987-03-20 1988-10-11 Michael C. Hettrick Optical system for high resolution spectrometer/monochromator
FR2626082B1 (fr) 1988-01-14 1991-10-18 Commissariat Energie Atomique Dispositif d'optique integree permettant de separer les composantes polarisees d'un champ electromagnetique guide et procede de realisation du dispositif
US5003567A (en) 1989-02-09 1991-03-26 Hawryluk Andrew M Soft x-ray reduction camera for submicron lithography
US4917934A (en) * 1989-04-27 1990-04-17 Corning Incorporated Telescope mirror blank and method of production
US5051326A (en) 1989-05-26 1991-09-24 At&T Bell Laboratories X-Ray lithography mask and devices made therewith
US5146518A (en) 1990-03-30 1992-09-08 The Furukawa Electric Co., Ltd. Optical directional coupler device and a method of driving same
US5043002A (en) 1990-08-16 1991-08-27 Corning Incorporated Method of making fused silica by decomposing siloxanes
US5152819A (en) 1990-08-16 1992-10-06 Corning Incorporated Method of making fused silica
JP3153230B2 (ja) 1990-09-10 2001-04-03 株式会社日立製作所 パタン形成方法
US5315629A (en) 1990-10-10 1994-05-24 At&T Bell Laboratories Ringfield lithography
US5203977A (en) 1991-03-11 1993-04-20 Regents Of The University Of California Magnetron sputtered boron films and TI/B multilayer structures
US5154744A (en) 1991-08-26 1992-10-13 Corning Incorporated Method of making titania-doped fused silica
US5173930A (en) 1991-11-22 1992-12-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration X-ray monochromator
US5304437A (en) 1992-04-03 1994-04-19 At&T Bell Laboratories Mask for x-ray pattern delineation
US5353322A (en) 1992-05-05 1994-10-04 Tropel Corporation Lens system for X-ray projection lithography camera
US5220590A (en) 1992-05-05 1993-06-15 General Signal Corporation X-ray projection lithography camera
US5395738A (en) 1992-12-29 1995-03-07 Brandes; George R. Electron lithography using a photocathode
US5356662A (en) * 1993-01-05 1994-10-18 At&T Bell Laboratories Method for repairing an optical element which includes a multilayer coating
US5332702A (en) 1993-04-16 1994-07-26 Corning Incorporated Low sodium zircon refractory and fused silica process
JP3513236B2 (ja) 1993-11-19 2004-03-31 キヤノン株式会社 X線マスク構造体、x線マスク構造体の製造方法、該x線マスク構造体を用いたx線露光装置及びx線露光方法、並びに該x線露光方法を用いて製造される半導体装置
JP2569426B2 (ja) 1994-03-24 1997-01-08 工業技術院長 超格子多層膜の製造方法
US5605490A (en) 1994-09-26 1997-02-25 The United States Of America As Represented By The Secretary Of The Army Method of polishing langasite
US5521031A (en) 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum
US5510230A (en) 1994-10-20 1996-04-23 At&T Corp. Device fabrication using DUV/EUV pattern delineation
JP3064857B2 (ja) * 1995-03-28 2000-07-12 株式会社ニコン 光リソグラフィー用光学部材および合成石英ガラスの製造方法
US5868605A (en) 1995-06-02 1999-02-09 Speedfam Corporation In-situ polishing pad flatness control
US5637962A (en) 1995-06-09 1997-06-10 The Regents Of The University Of California Office Of Technology Transfer Plasma wake field XUV radiation source
US6007963A (en) 1995-09-21 1999-12-28 Sandia Corporation Method for extreme ultraviolet lithography
US5815310A (en) 1995-12-12 1998-09-29 Svg Lithography Systems, Inc. High numerical aperture ring field optical reduction system
US5698113A (en) 1996-02-22 1997-12-16 The Regents Of The University Of California Recovery of Mo/Si multilayer coated optical substrates
US5737137A (en) 1996-04-01 1998-04-07 The Regents Of The University Of California Critical illumination condenser for x-ray lithography
DE19616922A1 (de) 1996-04-27 1997-10-30 Zeiss Carl Fa Hochauflösendes lichtstarkes Objektiv
US6133577A (en) 1997-02-04 2000-10-17 Advanced Energy Systems, Inc. Method and apparatus for producing extreme ultra-violet light for use in photolithography
US6093484A (en) 1997-04-04 2000-07-25 Hoya Corporation Method for the production of glass product
US5956192A (en) 1997-09-18 1999-09-21 Svg Lithography Systems, Inc. Four mirror EUV projection optics
EP1030822B1 (en) * 1997-09-24 2010-06-23 Corning Incorporated FUSED SiO2-TiO2 GLASS METHOD
JPH11221742A (ja) 1997-09-30 1999-08-17 Hoya Corp 研磨方法及び研磨装置並びに磁気記録媒体用ガラス基板及び磁気記録媒体
US6118577A (en) 1998-08-06 2000-09-12 Euv, L.L.C Diffractive element in extreme-UV lithography condenser
US6312373B1 (en) 1998-09-22 2001-11-06 Nikon Corporation Method of manufacturing an optical system
US5970751A (en) 1998-09-22 1999-10-26 Corning Incorporated Fused SiO2 -TiO2 glass method
US6013399A (en) 1998-12-04 2000-01-11 Advanced Micro Devices, Inc. Reworkable EUV mask materials
US6178221B1 (en) * 1998-12-04 2001-01-23 Advanced Micro Devices, Inc. Lithography reflective mask
US6048652A (en) 1998-12-04 2000-04-11 Advanced Micro Devices, Inc. Backside polish EUV mask and method of manufacture
US6319634B1 (en) * 1999-03-12 2001-11-20 Corning Incorporated Projection lithography photomasks and methods of making
AU6208300A (en) 1999-07-22 2001-02-13 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method system and lithography elements
WO2001007967A1 (en) 1999-07-22 2001-02-01 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method and mask devices
US6368942B1 (en) * 2000-03-31 2002-04-09 Euv Llc Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958052A (en) * 1974-06-12 1976-05-18 Corning Glass Works Subsurface-fortified glass laminates
US4130437A (en) * 1978-04-12 1978-12-19 Corning Glass Works Photochromic glasses suitable for simultaneous heat treatment and shaping
US4282021A (en) * 1978-10-02 1981-08-04 Corning Glass Works Method of making photochromic glasses suitable for simultaneous heat treatment and shaping
US4231827A (en) * 1979-03-29 1980-11-04 Ppg Industries, Inc. Press polishing and laminating plastic transparencies using polycarbonate pressing plates
US5750448A (en) * 1995-12-12 1998-05-12 Schott Glaswerke Copper(II) oxide-containing aluminophosphate glasses

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1324857A4 *

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6829908B2 (en) 2002-02-27 2004-12-14 Corning Incorporated Fabrication of inclusion free homogeneous glasses
US6832493B2 (en) 2002-02-27 2004-12-21 Corning Incorporated High purity glass bodies formed by zero shrinkage casting
US7462574B2 (en) 2003-04-03 2008-12-09 Asahi Glass Company, Limited Silica glass containing TiO2 and optical material for EUV lithography
JP2013177299A (ja) * 2003-04-03 2013-09-09 Asahi Glass Co Ltd TiO2を含有するシリカガラスの製造方法
WO2004089838A1 (en) * 2003-04-03 2004-10-21 Asahi Glass Company Limited Silica glass containing tio2 and optical material for euv lithography
WO2004092082A1 (ja) * 2003-04-11 2004-10-28 Nikon Corporation SiO2-TiO2系ガラスの製造方法、SiO2-TiO2系ガラス及び露光装置
DE10318935A1 (de) * 2003-04-26 2004-11-18 Schott Glas Verfahren zur Herstellung von Glaskörpern aus dotiertem Quarzglas
EP1471038A3 (de) * 2003-04-26 2005-11-23 Schott Ag Verfahren zur Herstellung von Glaskörpern aus dotiertem Quarzglas
DE202004021665U1 (de) 2003-04-26 2009-11-26 Schott Ag Glaskörper aus dotiertem Quarzglas
US7589040B2 (en) 2003-08-08 2009-09-15 Corning Incorporated Doped silica glass articles and methods of forming doped silica glass boules and articles
US7155936B2 (en) 2003-08-08 2007-01-02 Corning Incorporated Doped silica glass articles and methods of forming doped silica glass boules and articles
DE102004015766B4 (de) * 2004-03-23 2016-05-12 Asahi Glass Co., Ltd. Verwendung eines SiO2-TiO2-Glases als strahlungsresistentes Substrat
US7172983B2 (en) 2004-03-23 2007-02-06 Schott Ag SiO2-TIO2 Glass body with improved resistance to radiation
DE102004015766A1 (de) * 2004-03-23 2005-10-13 Schott Ag SiO2-TiO2-Glas mit erhöhter Strahlungsbeständigkeit
EP1795506A1 (en) 2005-12-08 2007-06-13 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass and making method, euv lithographic member and photomask substrate
US8153336B2 (en) 2007-05-09 2012-04-10 Nikon Corporation Photomask substrate, photomask substrate forming member, photomask substrate fabricating method, photomask, and exposing method that uses the photomask
EP2146244A4 (en) * 2007-05-09 2010-04-28 Nikon Corp FOTOMASKENSUBSTRAT, ELEMENT FOR FORMING A FOTOMASKENSUBSTRATS, METHOD FOR THE PRODUCTION OF A FOTOMASKE, FOTOMASKE AND EXPOSURE PROCESSES WITH THE FOTOMASKE
EP2014624A3 (en) * 2007-06-06 2010-04-21 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass for nanoimprint molds
US7935648B2 (en) 2007-06-06 2011-05-03 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass for nanoimprint molds
US7923394B2 (en) 2007-06-06 2011-04-12 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass for nanoimprint molds
EP2003098A1 (en) * 2007-06-06 2008-12-17 Shin-Etsu Chemical Co., Ltd. Titania-doped quartz glass for nanoimprint molds
WO2011006759A1 (de) * 2009-07-15 2011-01-20 Heraeus Quarzglas Gmbh & Co. Kg Meniskuslinse aus synthetischem quarzglas und verfahren zu ihrer herstellung
US8850850B2 (en) 2009-07-15 2014-10-07 Heraeus Quarzglas Gmbh & Co. Kg Meniscus lens of synthetic quartz glass and method for the production thereof
EP2757078A1 (en) 2013-01-22 2014-07-23 Shin-Etsu Chemical Co., Ltd. Euv lithography member, making method, and titania-doped quartz glass
KR20140094451A (ko) 2013-01-22 2014-07-30 신에쓰 가가꾸 고교 가부시끼가이샤 Euv 리소그래피용 부재 및 그의 제조 방법, 및 티타니아 도핑 석영 유리
US9278881B2 (en) 2013-01-22 2016-03-08 Shin-Etsu Chemical Co., Ltd. EUV lithography member, making method, and titania-doped quartz glass
KR20140095422A (ko) * 2013-01-24 2014-08-01 신에쯔 세끼에이 가부시키가이샤 실리카티타니아 유리, 실리카티타니아 유리의 제조방법 및 실리카티타니아 유리의 선별방법
KR101952404B1 (ko) 2013-01-24 2019-02-26 신에쯔 세끼에이 가부시키가이샤 실리카티타니아 유리, 실리카티타니아 유리의 제조방법 및 실리카티타니아 유리의 선별방법

Also Published As

Publication number Publication date
EP1324857A4 (en) 2004-12-01
JP5142444B2 (ja) 2013-02-13
EP1324857A1 (en) 2003-07-09
US6776006B2 (en) 2004-08-17
US20020043080A1 (en) 2002-04-18
JP2004511414A (ja) 2004-04-15

Similar Documents

Publication Publication Date Title
US6776006B2 (en) Method to avoid striae in EUV lithography mirrors
US6542224B2 (en) Silica-based light-weight EUV lithography stages
CN100549818C (zh) 用于特殊微型光刻的基片
US6453005B2 (en) SiO2-coated mirror substrate for EUV
KR101288782B1 (ko) Uv 또는 euv 리소그래피용 광학 소자
EP1057077A1 (en) Method to adjust multilayer film stress induced deformation of optics
JP6127001B2 (ja) Euvリソグラフィ用の光学機構及び該光学機構を構成する方法
US9470872B2 (en) Reflective optical element
US7662263B2 (en) Figure correction of multilayer coated optics
US20040174624A1 (en) Reflecting device for electromagnetic waves
JP7061666B2 (ja) 半導体フォトリソグラフィで使用するためのアセンブリ及び同一のものを製造する方法
US20020043081A1 (en) Eliminating springback in EUV lithography mirrors
RU2264995C2 (ru) Материал подложки для рентгенооптических компонентов
JPH0868897A (ja) 反射鏡およびその製造方法
JPH0868898A (ja) 反射鏡およびその製造方法
US11480865B2 (en) Method and apparatus to improve EUV mask blank flatness
JP2005257769A (ja) 光学薄膜、光学素子及びそれを用いた露光装置及び露光方法
JP2000098092A (ja) 反射鏡およびその製造方法
JPH0933699A (ja) 多層膜反射鏡の製造方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): JP

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2001979254

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2002535847

Country of ref document: JP

WWP Wipo information: published in national office

Ref document number: 2001979254

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 2001979254

Country of ref document: EP