WO2002017369A1 - Procede de fabrication de cristal semi-conducteur de nitrure du groupe iii, procede de fabrication d'un semi-conducteur a base de nitrure de gallium, semi-conducteur a base de nitrure de gallium, dispositif electroluminescent a semi-conducteur a base de nitrure de gallium, et source lumineuse utilisant ce dispositif electro - Google Patents

Procede de fabrication de cristal semi-conducteur de nitrure du groupe iii, procede de fabrication d'un semi-conducteur a base de nitrure de gallium, semi-conducteur a base de nitrure de gallium, dispositif electroluminescent a semi-conducteur a base de nitrure de gallium, et source lumineuse utilisant ce dispositif electro Download PDF

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Publication number
WO2002017369A1
WO2002017369A1 PCT/JP2001/007080 JP0107080W WO0217369A1 WO 2002017369 A1 WO2002017369 A1 WO 2002017369A1 JP 0107080 W JP0107080 W JP 0107080W WO 0217369 A1 WO0217369 A1 WO 0217369A1
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WO
WIPO (PCT)
Prior art keywords
substrate
based compound
gallium nitride
compound semiconductor
temperature
Prior art date
Application number
PCT/JP2001/007080
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English (en)
Inventor
Yasuhito Urashima
Mineo Okuyama
Tetsuo Sakurai
Hisayuki Miki
Original Assignee
Showa Denko K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko K.K. filed Critical Showa Denko K.K.
Priority to DE10196361T priority Critical patent/DE10196361B4/de
Priority to US10/110,692 priority patent/US6852161B2/en
Priority to AU2001280097A priority patent/AU2001280097A1/en
Priority to KR1020027004863A priority patent/KR20020065892A/ko
Priority to JP2002521342A priority patent/JP3940673B2/ja
Priority to GB0208076A priority patent/GB2372635B/en
Publication of WO2002017369A1 publication Critical patent/WO2002017369A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un film de cristal semi-conducteur de nitrure du groupe III. Ce procédé consiste à utiliser une matière métallique pour déposer les particules d'un métal du groupe III sur la surface d'un substrat dans une atmosphère ne contenant aucune source d'azote, à nitrurer ces particules dans une atmosphère contenant une source d'azote mais ne renfermant aucune matière métallique, puis à développer un cristal semi-conducteur de nitrure du groupe III sur la surface du substrat sur laquelle les particules ont été déposées.
PCT/JP2001/007080 2000-08-18 2001-08-17 Procede de fabrication de cristal semi-conducteur de nitrure du groupe iii, procede de fabrication d'un semi-conducteur a base de nitrure de gallium, semi-conducteur a base de nitrure de gallium, dispositif electroluminescent a semi-conducteur a base de nitrure de gallium, et source lumineuse utilisant ce dispositif electro WO2002017369A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE10196361T DE10196361B4 (de) 2000-08-18 2001-08-17 Verfahren zur Herstellung eines Gruppe-III-Nitrid-Halbleiterkristalls
US10/110,692 US6852161B2 (en) 2000-08-18 2001-08-17 Method of fabricating group-iii nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device
AU2001280097A AU2001280097A1 (en) 2000-08-18 2001-08-17 Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light
KR1020027004863A KR20020065892A (ko) 2000-08-18 2001-08-17 3족 질화물 반도체 결정 제조 방법, 갈륨나이트라이드-기재 화합물 반도체 제조 방법, 갈륨나이트라이드-기재 화합물 반도체, 갈륨나이트라이드-기재 화합물 반도체 발광 소자, 및 반도체발광 소자를 이용한 광원
JP2002521342A JP3940673B2 (ja) 2000-08-18 2001-08-17 Ｉｉｉ族窒化物半導体結晶の製造方法、および窒化ガリウム系化合物半導体の製造方法
GB0208076A GB2372635B (en) 2000-08-18 2001-08-17 Method of fabricating group-III nitride semiconductor crystals.

Applications Claiming Priority (16)

Application Number Priority Date Filing Date Title
JP2000248106 2000-08-18
JP2000-248106 2000-08-18
JP2000-252067 2000-08-23
JP2000252067 2000-08-23
US25489800P 2000-12-13 2000-12-13
US25489500P 2000-12-13 2000-12-13
US60/254,898 2000-12-13
US60/254,895 2000-12-13
JP2001016636 2001-01-25
JP2001-16636 2001-01-25
US26985201P 2001-02-21 2001-02-21
US60/269,852 2001-02-21
JP2001048721 2001-02-23
JP2001-48721 2001-02-23
US27611601P 2001-03-16 2001-03-16
US60/276,116 2001-03-16

Publications (1)

Publication Number Publication Date
WO2002017369A1 true WO2002017369A1 (fr) 2002-02-28

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/007080 WO2002017369A1 (fr) 2000-08-18 2001-08-17 Procede de fabrication de cristal semi-conducteur de nitrure du groupe iii, procede de fabrication d'un semi-conducteur a base de nitrure de gallium, semi-conducteur a base de nitrure de gallium, dispositif electroluminescent a semi-conducteur a base de nitrure de gallium, et source lumineuse utilisant ce dispositif electro

Country Status (5)

Country Link
JP (1) JP3940673B2 (fr)
AU (1) AU2001280097A1 (fr)
DE (1) DE10196361B4 (fr)
GB (1) GB2372635B (fr)
WO (1) WO2002017369A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004083316A (ja) * 2002-08-26 2004-03-18 Namiki Precision Jewel Co Ltd 単結晶サファイア基板および単結晶サファイア基板の作製方法ならびに液晶プロジェクタ装置
WO2005062390A1 (fr) * 2003-12-22 2005-07-07 Showa Denko K.K. Dispositif a semi-conducteur a base de nitrure du groupe iii et dispositif electroluminescent utilisant ledit dispositif
WO2006109840A1 (fr) 2005-04-07 2006-10-19 Showa Denko K.K. Procédé de production d'un élément semi-conducteur à base d'un nitrure du groupe iii
JP2007500934A (ja) * 2003-07-31 2007-01-18 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 複数のオプトエレクトロニクス半導体チップの製造方法およびオプトエレクトロニクス半導体チップ
JP2007500935A (ja) * 2003-07-31 2007-01-18 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 複数のオプトエレクトロニクス半導体チップの製造方法およびオプトエレクトロニクス半導体チップ
DE10196361B4 (de) * 2000-08-18 2008-01-03 Showa Denko K.K. Verfahren zur Herstellung eines Gruppe-III-Nitrid-Halbleiterkristalls
JP2008545261A (ja) * 2005-07-01 2008-12-11 オプトガン オイ 半導体構造および半導体構造を製造する方法
US8674337B2 (en) 2003-07-18 2014-03-18 Lg Innotek Co., Ltd. Gallium nitride based light emitting diode and fabrication method thereof
CN114050104A (zh) * 2021-11-12 2022-02-15 松山湖材料实验室 氮化铝单晶衬底的加工方法及紫外发光器件的制备方法

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JP3768943B2 (ja) * 2001-09-28 2006-04-19 日本碍子株式会社 Ｉｉｉ族窒化物エピタキシャル基板、ｉｉｉ族窒化物素子用エピタキシャル基板及びｉｉｉ族窒化物素子
KR100712753B1 (ko) * 2005-03-09 2007-04-30 주식회사 실트론 화합물 반도체 장치 및 그 제조방법
JP2006344930A (ja) * 2005-04-07 2006-12-21 Showa Denko Kk Ｉｉｉ族窒化物半導体素子の製造方法
JP5131889B2 (ja) * 2005-12-06 2013-01-30 学校法人 名城大学 窒化物系化合物半導体素子の製造方法
KR100901822B1 (ko) * 2007-09-11 2009-06-09 주식회사 실트론 질화갈륨 성장용 기판 및 질화갈륨 기판 제조 방법
JP5167974B2 (ja) * 2008-06-16 2013-03-21 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
CN105612276B (zh) * 2014-08-29 2017-02-01 创光科学株式会社 外延生长用模板以及其制作方法、和氮化物半导体装置

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JPS63239936A (ja) * 1987-03-27 1988-10-05 Canon Inc 多結晶薄膜半導体の形成方法
JPH05109621A (ja) * 1991-10-15 1993-04-30 Asahi Chem Ind Co Ltd 窒化ガリウム系薄膜の成長方法
JPH09134878A (ja) * 1995-11-10 1997-05-20 Matsushita Electron Corp 窒化ガリウム系化合物半導体の製造方法
JPH10215035A (ja) * 1997-01-30 1998-08-11 Toshiba Corp 化合物半導体素子及びその製造方法
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JPH11261169A (ja) * 1998-03-12 1999-09-24 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法および半導体装置
JP2000068559A (ja) * 1998-08-24 2000-03-03 Mitsubishi Cable Ind Ltd ＧａＮ系結晶基材およびその製造方法
JP2001057463A (ja) * 1999-06-07 2001-02-27 Sharp Corp 窒素化合物半導体膜構造及び窒素化合物半導体素子並びにそれらの製造方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10196361B4 (de) * 2000-08-18 2008-01-03 Showa Denko K.K. Verfahren zur Herstellung eines Gruppe-III-Nitrid-Halbleiterkristalls
JP2004083316A (ja) * 2002-08-26 2004-03-18 Namiki Precision Jewel Co Ltd 単結晶サファイア基板および単結晶サファイア基板の作製方法ならびに液晶プロジェクタ装置
US8674337B2 (en) 2003-07-18 2014-03-18 Lg Innotek Co., Ltd. Gallium nitride based light emitting diode and fabrication method thereof
US9362454B2 (en) 2003-07-18 2016-06-07 Lg Innotek Co., Ltd. Gallium nitride based light emitting diode
US8927960B2 (en) 2003-07-18 2015-01-06 Lg Innotek Co., Ltd. Gallium nitride based light emitting diode
US8680571B2 (en) 2003-07-18 2014-03-25 Lg Innotek Co., Ltd. Gallium nitride based light emitting diode
JP2007500935A (ja) * 2003-07-31 2007-01-18 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 複数のオプトエレクトロニクス半導体チップの製造方法およびオプトエレクトロニクス半導体チップ
US7896965B2 (en) 2003-07-31 2011-03-01 Osram Opto Semiconductors Gmbh Method for the production of a plurality of optoelectronic semiconductor chips and optoelectronic semiconductor chip
US8017416B2 (en) 2003-07-31 2011-09-13 Osram Opto Semiconductors Gmbh Method for the production of a plurality of opto-electronic semiconductor chips and opto-electronic semiconductor chip
JP2007500934A (ja) * 2003-07-31 2007-01-18 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 複数のオプトエレクトロニクス半導体チップの製造方法およびオプトエレクトロニクス半導体チップ
US7781795B2 (en) 2003-12-22 2010-08-24 Showa Denko K.K. Group III nitride semiconductor device and light-emitting device using the same
WO2005062390A1 (fr) * 2003-12-22 2005-07-07 Showa Denko K.K. Dispositif a semi-conducteur a base de nitrure du groupe iii et dispositif electroluminescent utilisant ledit dispositif
WO2006109840A1 (fr) 2005-04-07 2006-10-19 Showa Denko K.K. Procédé de production d'un élément semi-conducteur à base d'un nitrure du groupe iii
EP1869717B1 (fr) * 2005-04-07 2017-01-04 Toyoda Gosei Co., Ltd. Procédé de production d'un élément semi-conducteur à base d'un nitrure du groupe iii
JP2008545261A (ja) * 2005-07-01 2008-12-11 オプトガン オイ 半導体構造および半導体構造を製造する方法
CN114050104A (zh) * 2021-11-12 2022-02-15 松山湖材料实验室 氮化铝单晶衬底的加工方法及紫外发光器件的制备方法
CN114050104B (zh) * 2021-11-12 2022-09-30 松山湖材料实验室 氮化铝单晶衬底的加工方法及紫外发光器件的制备方法

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AU2001280097A1 (en) 2002-03-04
GB2372635A (en) 2002-08-28
GB0208076D0 (en) 2002-05-22

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