AU2001280097A1 - Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light - Google Patents
Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor lightInfo
- Publication number
- AU2001280097A1 AU2001280097A1 AU2001280097A AU8009701A AU2001280097A1 AU 2001280097 A1 AU2001280097 A1 AU 2001280097A1 AU 2001280097 A AU2001280097 A AU 2001280097A AU 8009701 A AU8009701 A AU 8009701A AU 2001280097 A1 AU2001280097 A1 AU 2001280097A1
- Authority
- AU
- Australia
- Prior art keywords
- based compound
- gallium nitride
- compound semiconductor
- fabricating
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title 5
- 229910002601 GaN Inorganic materials 0.000 title 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title 3
- 150000001875 compounds Chemical class 0.000 title 3
- 239000013078 crystal Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (17)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000248106 | 2000-08-18 | ||
JP2000-248106 | 2000-08-18 | ||
JP2000252067 | 2000-08-23 | ||
JP2000-252067 | 2000-08-23 | ||
US25489800P | 2000-12-13 | 2000-12-13 | |
US25489500P | 2000-12-13 | 2000-12-13 | |
US60254895 | 2000-12-13 | ||
US60254898 | 2000-12-13 | ||
JP2001016636 | 2001-01-25 | ||
JP2001-16636 | 2001-01-25 | ||
US26985201P | 2001-02-21 | 2001-02-21 | |
US60269852 | 2001-02-21 | ||
JP2001048721 | 2001-02-23 | ||
JP2001-48721 | 2001-02-23 | ||
US27611601P | 2001-03-16 | 2001-03-16 | |
US60276116 | 2001-03-16 | ||
PCT/JP2001/007080 WO2002017369A1 (fr) | 2000-08-18 | 2001-08-17 | Procede de fabrication de cristal semi-conducteur de nitrure du groupe iii, procede de fabrication d'un semi-conducteur a base de nitrure de gallium, semi-conducteur a base de nitrure de gallium, dispositif electroluminescent a semi-conducteur a base de nitrure de gallium, et source lumineuse utilisant ce dispositif electro |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001280097A1 true AU2001280097A1 (en) | 2002-03-04 |
Family
ID=27573712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001280097A Abandoned AU2001280097A1 (en) | 2000-08-18 | 2001-08-17 | Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP3940673B2 (fr) |
AU (1) | AU2001280097A1 (fr) |
DE (1) | DE10196361B4 (fr) |
GB (1) | GB2372635B (fr) |
WO (1) | WO2002017369A1 (fr) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2372635B (en) * | 2000-08-18 | 2005-01-19 | Showa Denko Kk | Method of fabricating group-III nitride semiconductor crystals. |
JP3768943B2 (ja) * | 2001-09-28 | 2006-04-19 | 日本碍子株式会社 | Iii族窒化物エピタキシャル基板、iii族窒化物素子用エピタキシャル基板及びiii族窒化物素子 |
JP2004083316A (ja) * | 2002-08-26 | 2004-03-18 | Namiki Precision Jewel Co Ltd | 単結晶サファイア基板および単結晶サファイア基板の作製方法ならびに液晶プロジェクタ装置 |
KR101034055B1 (ko) | 2003-07-18 | 2011-05-12 | 엘지이노텍 주식회사 | 발광 다이오드 및 그 제조방법 |
DE10335081A1 (de) * | 2003-07-31 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoeleketronischer Halbleiterchip |
DE10335080A1 (de) * | 2003-07-31 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
WO2005062390A1 (fr) * | 2003-12-22 | 2005-07-07 | Showa Denko K.K. | Dispositif a semi-conducteur a base de nitrure du groupe iii et dispositif electroluminescent utilisant ledit dispositif |
FI118196B (fi) * | 2005-07-01 | 2007-08-15 | Optogan Oy | Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä |
KR100712753B1 (ko) * | 2005-03-09 | 2007-04-30 | 주식회사 실트론 | 화합물 반도체 장치 및 그 제조방법 |
US20090140286A1 (en) * | 2005-04-07 | 2009-06-04 | Showa Denko K.K. | Production Method of Group III Nitride Semiconductor Element |
JP2006344930A (ja) * | 2005-04-07 | 2006-12-21 | Showa Denko Kk | Iii族窒化物半導体素子の製造方法 |
JP5131889B2 (ja) * | 2005-12-06 | 2013-01-30 | 学校法人 名城大学 | 窒化物系化合物半導体素子の製造方法 |
KR100901822B1 (ko) * | 2007-09-11 | 2009-06-09 | 주식회사 실트론 | 질화갈륨 성장용 기판 및 질화갈륨 기판 제조 방법 |
JP5167974B2 (ja) * | 2008-06-16 | 2013-03-21 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子及びその製造方法 |
US9556535B2 (en) * | 2014-08-29 | 2017-01-31 | Soko Kagaku Co., Ltd. | Template for epitaxial growth, method for producing the same, and nitride semiconductor device |
CN114050104B (zh) * | 2021-11-12 | 2022-09-30 | 松山湖材料实验室 | 氮化铝单晶衬底的加工方法及紫外发光器件的制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50109621A (fr) * | 1974-02-04 | 1975-08-28 | ||
JPS60173829A (ja) * | 1984-02-14 | 1985-09-07 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体薄膜の成長方法 |
JPS63239936A (ja) * | 1987-03-27 | 1988-10-05 | Canon Inc | 多結晶薄膜半導体の形成方法 |
JPH05109621A (ja) * | 1991-10-15 | 1993-04-30 | Asahi Chem Ind Co Ltd | 窒化ガリウム系薄膜の成長方法 |
JPH09134878A (ja) * | 1995-11-10 | 1997-05-20 | Matsushita Electron Corp | 窒化ガリウム系化合物半導体の製造方法 |
JPH10215035A (ja) * | 1997-01-30 | 1998-08-11 | Toshiba Corp | 化合物半導体素子及びその製造方法 |
JPH11135832A (ja) * | 1997-10-26 | 1999-05-21 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体及びその製造方法 |
JP3988245B2 (ja) * | 1998-03-12 | 2007-10-10 | ソニー株式会社 | 窒化物系iii−v族化合物半導体の成長方法および半導体装置の製造方法 |
JP3650531B2 (ja) * | 1998-08-24 | 2005-05-18 | 三菱電線工業株式会社 | GaN系結晶基材およびその製造方法 |
JP2001057463A (ja) * | 1999-06-07 | 2001-02-27 | Sharp Corp | 窒素化合物半導体膜構造及び窒素化合物半導体素子並びにそれらの製造方法 |
GB2372635B (en) * | 2000-08-18 | 2005-01-19 | Showa Denko Kk | Method of fabricating group-III nitride semiconductor crystals. |
-
2001
- 2001-08-17 GB GB0208076A patent/GB2372635B/en not_active Expired - Fee Related
- 2001-08-17 DE DE10196361T patent/DE10196361B4/de not_active Expired - Fee Related
- 2001-08-17 WO PCT/JP2001/007080 patent/WO2002017369A1/fr active Application Filing
- 2001-08-17 JP JP2002521342A patent/JP3940673B2/ja not_active Expired - Fee Related
- 2001-08-17 AU AU2001280097A patent/AU2001280097A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
GB2372635B (en) | 2005-01-19 |
GB0208076D0 (en) | 2002-05-22 |
JP3940673B2 (ja) | 2007-07-04 |
JP2004507106A (ja) | 2004-03-04 |
GB2372635A (en) | 2002-08-28 |
DE10196361B4 (de) | 2008-01-03 |
WO2002017369A1 (fr) | 2002-02-28 |
DE10196361T5 (de) | 2005-05-25 |
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