WO2002015293A2 - Organischer feldeffekt-transistor (ofet), herstellungsverfahren dazu und daraus gebaute integrierte schaltung sowie verwendungen - Google Patents
Organischer feldeffekt-transistor (ofet), herstellungsverfahren dazu und daraus gebaute integrierte schaltung sowie verwendungen Download PDFInfo
- Publication number
- WO2002015293A2 WO2002015293A2 PCT/DE2001/003163 DE0103163W WO0215293A2 WO 2002015293 A2 WO2002015293 A2 WO 2002015293A2 DE 0103163 W DE0103163 W DE 0103163W WO 0215293 A2 WO0215293 A2 WO 0215293A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- integrated circuit
- effect transistor
- ofet
- organic field
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000010410 layer Substances 0.000 claims description 71
- 239000012212 insulator Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 10
- 238000005538 encapsulation Methods 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000012044 organic layer Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 230000010365 information processing Effects 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 7
- 239000011368 organic material Substances 0.000 description 6
- 239000004033 plastic Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 229920000767 polyaniline Polymers 0.000 description 3
- 238000010345 tape casting Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/80—Interconnections, e.g. terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
Definitions
- OFET Organic field effect transistor
- the invention relates to an organic field effect transistor (OFET) with improved performance.
- Organic integrated circuits plastic integrated circuits PIC
- OFETs optical transistors
- RFID tags radio frequency identification tags
- the excellent operating behavior of silicon technology can be dispensed with, but this should ensure very low manufacturing costs and mechanical flexibility.
- the components such as Electronic bar codes are typically one-way products.
- Transponder RFID tag
- Previously known organic circuits based on OFETs have an maximum switching speed of 100 bit / s (Philips-. Gelinck et al., APL 77, pp. 1487-89, 9/2000). This is far too slow for the rapid acquisition of goods / objects, as typical 128 bits must be transmitted. A readout time of approx. 0.1 - 0.05 s is desirable. Very fast OFETs are needed for this.
- the switching speed of an OFET is determined by the transit time of the charge carriers from the source to the drain electrode and is therefore dependent on the mobility in the semiconducting material and also on the channel length of the current channel in such a way that a longer current channel leads to a lower switching frequency and vice versa.
- high switching frequencies are aimed at because many applications of the OFET depend on its switching speed and the use of OFETs has been severely limited because of the low switching frequency because generally in information processing the bit rate required for a usable transmission is at least in the KBit / s range lies.
- the OFET with a current channel running laterally, ie horizontally and parallel to the substrate surface.
- the only current channel arises between the source and drain electrodes, which in the previously known systems lie in one plane and parallel to the plane of the substrate surface.
- the distance between the source and drain determines the length of the current channel, although a minimal one has so far been used with the structuring methods
- the object of the invention is to increase the performance, in particular the output currents and switching frequency, of an OFET by improving the "lay-out" of the OFET and the circuit built therefrom.
- the subject matter of the invention is an organic field-effect transistor on a substrate, at least one semi- tende, at least one drain and a source electrode connecting layer, at least two insulating and at least one conductive layer with gate electrode are applied on the substrate such that after applying a voltage to the gate electrode by the field effect at least two
- the invention also relates to a method for producing a multi-channel OFET by applying structured organic layers (e.g. polymer layers) to a substrate and / or a method for producing an OFET with a current channel running transversely to the substrate surface.
- structured organic layers e.g. polymer layers
- the invention also relates to an integrated circuit with at least two transistors which are arranged in a stack.
- the use of the OFET with at least two and / or a vertical current channel in the construction of logic circuits and / or in the control of organic displays is also the subject of the invention, and the use in a fast transponder and / or an RFID tag.
- the method for producing an OFET comprises the following steps:
- information can preferably be processed at a speed of at least 10 kbit / s.
- the source and drain electrodes lie on a plane which is approximately parallel to the plane of the substrate surface.
- the distance between the two electrodes is kept as small as possible and is essentially dependent on the fineness or resolution of the structuring method and is therefore a decisive cost factor in the production of the OFET because the finer structuring methods are the more expensive.
- the OFET with a vertical current channel makes it possible to achieve significantly shorter distances between drain and source, for example approximately 100 nm to approximately 1 ⁇ m, very cost-effectively by choosing the layer thickness.
- the channel length which reflects the distance between the source and drain electrodes, does not depend on the resolution of the expensive and expensive photolithography
- Structuring methods depends, but very simply on the layer thickness of the insulator layer, which is applied between the source and drain.
- OFETs can be used with a switching speed manufacture, as they are interesting for applications in transponders.
- Two or more current channels of an OFET are preferably generated by at least two gate electrodes.
- both sides of a gate electrode are used to generate current channels.
- an OFET has at least two current channels with different geometries.
- the output currents and / or the switching frequency can be increased independently of the material used.
- the additional current channels can be achieved by using multiple gate electrodes or by using both sides of a gate
- Electrode are generated. When using two or more gate electrodes, these are preferably short-circuited. As a result, the various current channels can be controlled by only one gate voltage. An additional transistor connection is also avoided by connecting the gate electrodes. This allows the multi-channel OFET to be easily integrated into existing circuit concepts.
- An OFET is produced by the structured application of organic layers (e.g. polymer and / or
- Oligomer layers or. generally by coating with insulating, semiconducting and / or conductive plastic layers. This is preferably achieved using a printing technique or by application such as spin coating, vapor deposition, pouring on, spin coating or sputtering with subsequent photolithography.
- the structured layers are applied, for example, in the following order:
- a gate electrode is applied to a substrate. Then an insulator layer is applied to the gate electrode, which is larger in one direction and smaller in the direction perpendicular to it than the gate electrode. At least one source electrode and at least one drain electrode are applied to the insulator layer in such a way that the lower gate electrode is approximately centered between the source and drain electrodes.
- the electrode can be structured, for example, by photolithography, printing and / or by doctor blade.
- a semiconductor layer is then applied between the source electrode and the drain electrode, the semiconductor layer overlapping the source and drain electrode by a few micrometers.
- Another, upper insulator layer is applied to the semiconductor layer.
- An upper gate electrode is preferably applied to the upper insulator layer in such a way that a short circuit to the lower gate electrode occurs due to overlap.
- the first insulator the layer thickness of which determines the channel length in the case of an OFET with a vertical current channel, is applied to the lower electrode, for example, by spin coating or knife coating and is also structured.
- the insulator can be structured both in a separate work step and together with the adjacent drain electrode layer.
- the first insulator can also be applied, for example, by printing.
- the semiconducting layer can be applied, for example, by spin coating or knife coating and structured using photolithography.
- the second insulator layer can also be spun on or applied by knife coating.
- the gate electrode can be applied by sputtering, vapor deposition, or printing.
- the source / drain electrode can comprise conductive organic material and / or a metallic conductor.
- Polyimide, polyester and / or polymethacrylate is used as the insulator.
- Either metal or a conductive plastic is used as the gate.
- An organic material with high charge carrier mobility is preferably used as the semiconducting layer.
- Polyaniline is preferably used as the conductive layer
- organic material here encompasses all types of organic, organometallic and / or inorganic plastics which are referred to in English as "plastics", for example. These are all types of substances with the exception of the semiconductors that form the classic diodes (germanium, silicon) and the typical metallic conductors. A restriction in the dogmatic sense to organic material as carbon-containing material is therefore not provided, but rather the widespread use of, for example, silicones is also contemplated. Furthermore, the term should not be subject to any restriction with regard to the molecular size, in particular to polymers and / or oligomeric materials, but the use of “s all molecules” is also entirely possible.
- the surface of the substrate limits the number of transistors which together form the integrated circuit because the transistors are only arranged next to one another and at a minimum distance, so that the field effect of one transistor does not disturb an adjacent transistor or vice versa.
- the disadvantage of this is that the two-dimensional, that is to say area, space requirement of the integrated circuit is relatively high.
- the usable area of a substrate can be doubled or multiplied, because the transistors can not only be arranged next to one another, but also one above the other.
- the term "multiplication" does not only mean integer multiples.
- the encapsulation and / or covering of the lower OFET can serve as a substrate and / or carrier for the upper OFET.
- the thickness and the material of the encapsulation are chosen such that they do not allow a field effect from the gate electrode of the lower transistor to the drain or source electrode of the upper transistor.
- the thickness of the encapsulating and / or insulating layer is chosen so that it is far greater than that of the insulator layer between the gate electrode and the source / drain electrodes of an OFET.
- the thickness of the layer between two stacked transistors is preferably well above 200 nm, for example in the range between 400 and 800 nm, in particular approximately 600 nm.
- An insulator layer is preferably used as the material for the encapsulation.
- Materials for this are the common insulators in organic semiconductor technology, such as Polyvinylphenol (PVP).
- FIGS. 1 to 3 show the structure and layout of a multi-channel OFET using the example of a double-channel OFET
- FIGS. 4 to 6 show an OFET with at least one vertical current channel and finally one is shown in FIG. 7
- Integrated circuit to see which comprises at least two transistors, which are arranged in a stack:
- FIG. 1 shows a double-channel OFET from above
- Figure 2 shows a cross section through the OFET along the line A-A
- Figure 3 shows a cross section along the line B-B.
- FIG. 4 shows the layer structure of an OFET with a vertical current channel.
- FIG. 5 shows an exemplary embodiment for a layout of an OFET with two vertical current channels.
- FIG. 6 shows a further variant of an OFET with two vertical current channels.
- FIG. 7 shows a cross section through two stacked organic field-effect transistors:
- Figure 1 the three electrodes of a transistor can be seen: the source electrode 4, the drain electrode 5 and a gate electrode 8, which e.g. is short-circuited with the gate electrode 2 (see FIG. 3). Furthermore, the upper insulator layer 7 can be seen, which prevents electrical contact between the gate electrode 8 and the semiconductor 6.
- FIG. 2 shows the layout of the double-channel OFET in a cross section along the line AA in FIG. 1.
- the substrate 1 which can be made, for example, of glass, ceramic, Si wafers or an organic material such as polyimide or polyethylene terephthalate (PET) film.
- the lower insulator layer 3 which can consist, for example, of polyvinylphenol.
- the lower and upper gate electrodes can be made of conductive polymers such as polyaniline (PAni), for example.
- PAni polyaniline
- the field effect creates two current channels through the two gate electrodes: one on the top side and one on the bottom side of the semiconductor layer 6. This causes an increase in the output current according to the invention.
- the lower gate electrode is completely enclosed by the lower insulator 3 and the substrate 1.
- the semiconductor 6 for example poly-3-hexylthiophene
- the semiconductor 6 with the two electrodes 4 and 5 (source and drain) is located on the lower insulator layer and the upper insulation layer 7 and then the upper gate electrode 8 can be seen as a subsequent layer.
- FIG. 3 shows a cross section through the double-channel OFET from FIG. 1 along the line B-B.
- the (flexible) substrate 1 can be seen again at the very bottom, the lower gate electrode 2 lying thereon, to which the upper gate electrode 8 is connected.
- the gate electrodes are encased by the gate electrodes: the lower and upper insulation layers 3 and 7, which in turn completely enclose the semiconductor 6 (in cross section).
- the source electrode 4 is applied to the substrate 1.
- the first insulator layer 3 and the semiconducting layer 6 are in contact with this layer and with the source electrode 4.
- the drain electrode 5 adjoins the first insulator layer 3, which in turn is also in contact with the semiconducting layer 6.
- the semiconducting layer 6 is therefore in contact with the two electrodes source 4 and drain 5 and also with the first insulator layer 3 separating them.
- source 4 and drain 5 are not in contact with one another but are electrically insulated from one another by the first insulator layer 3. These two electrodes are connected only by the semiconducting layer 6.
- the thickness 1 of the first insulator layer 3 corresponds to the length of the current channel 9, which occurs after a voltage has been applied to the gate electrode 8 due to the field effect between the source electrode 4 and the drain electrode 5 in the semiconducting material 6.
- FIG. 5 shows an exemplary embodiment for a layout of an OFET with two vertical current channels.
- the layer structure from bottom to top again shows the substrate 1, followed by the source electrode 4, on which the first insulator layer 3 and the drain electrode 5 are applied in a structured manner.
- the layers 3, 4 and 5 are covered with semiconducting material 6.
- the semiconductor 6 is covered with a second insulator 7.
- Two gate electrodes 8 are applied in a structured manner on the second insulator 7, so that two vertical current channels 9 are formed.
- two vertical current channels are also created, but not via two gate electrodes 8, but via two drain electrodes 5.
- FIG. 7 shows a cross section through two stacked organic field-effect transistors: The structure from bottom to top shows the following layers of an integrated circuit:
- the substrate 1 can be seen below, on which the drain and source electrodes 4, 5 on the left and right outside and, surrounding them, the semiconductor layer 6 are applied.
- the first insulator layer 3 is located on the semiconductor layer 6.
- a gate electrode 8 is seated there and is connected via a contact tab 10 to a source and / or drain electrode 4, 5 of a lower transistor in such a way that it as soon as current flows through the semiconductor layer 6 between the drain and source electrodes 4, 5 and a stack of transistors is accordingly switched on, with the delay of a domino effect, by applying current to the lowermost gate electrode 8 becomes.
- the second insulator layer 7 is located above a gate electrode 8 and enables the transistors to be stacked.
- the invention relates to an organic field effect transistor with increased performance.
- the output current is increased by the construction of several current channels on the OFET, which all make a contribution to the output current.
- the invention relates to integrated circuits in which the transistors are stacked on a substrate to save space.
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01964917A EP1310004A2 (de) | 2000-08-18 | 2001-08-17 | Organischer feldeffekt-transistor (ofet), herstellungsverfahren dazu und daraus gebaute integrierte schaltung sowie verwendungen |
JP2002520322A JP2004507096A (ja) | 2000-08-18 | 2001-08-17 | 有機電界効果トランジスタ(ofet),該有機電界効果トランジスタの製造方法、前記有機電界効果トランジスタから形成される集積回路、及び該集積回路の使用 |
US10/344,951 US20040029310A1 (en) | 2000-08-18 | 2001-08-17 | Organic field-effect transistor (ofet), a production method therefor, an integrated circut constructed from the same and their uses |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10040441 | 2000-08-18 | ||
DE10040441.3 | 2000-08-18 | ||
DE10057502.1 | 2000-11-20 | ||
DE10057502A DE10057502A1 (de) | 2000-11-20 | 2000-11-20 | Organischer Feld-Effekt-Transistor |
DE10057665A DE10057665A1 (de) | 2000-11-21 | 2000-11-21 | Integrierte Schaltung und Herstellungsverfahren dazu |
DE10057665.6 | 2000-11-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002015293A2 true WO2002015293A2 (de) | 2002-02-21 |
WO2002015293A3 WO2002015293A3 (de) | 2002-08-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2001/003163 WO2002015293A2 (de) | 2000-08-18 | 2001-08-17 | Organischer feldeffekt-transistor (ofet), herstellungsverfahren dazu und daraus gebaute integrierte schaltung sowie verwendungen |
Country Status (4)
Country | Link |
---|---|
US (1) | US20040029310A1 (de) |
EP (1) | EP1310004A2 (de) |
JP (1) | JP2004507096A (de) |
WO (1) | WO2002015293A2 (de) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1367659A2 (de) | 2002-05-21 | 2003-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Organischer Feldeffekt-Transistor |
EP1385218A1 (de) * | 2002-07-22 | 2004-01-28 | Ricoh Company, Ltd. | Halbleiteranordnung, el - Anzeigevorrichtung, Flüssigkristallanzeige und Rechner |
JP2005079549A (ja) * | 2003-09-03 | 2005-03-24 | Victor Co Of Japan Ltd | 有機薄膜トランジスタ |
WO2007064334A1 (en) * | 2005-12-02 | 2007-06-07 | Advanced Micro Devices, Inc. | Polymer-based transistor devices, methods, and systems |
CN100403549C (zh) * | 2002-12-19 | 2008-07-16 | 松下电器产业株式会社 | 半导体器件及保持电路 |
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JP2004506985A (ja) * | 2000-08-18 | 2004-03-04 | シーメンス アクチエンゲゼルシヤフト | 封入された有機電子構成素子、その製造方法および使用 |
DE10043204A1 (de) * | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
US7314784B2 (en) * | 2003-03-19 | 2008-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
JP4926378B2 (ja) * | 2003-03-19 | 2012-05-09 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
US7476893B2 (en) * | 2003-08-29 | 2009-01-13 | The Regents Of The University Of California | Vertical organic field effect transistor |
US20080238627A1 (en) * | 2005-03-22 | 2008-10-02 | Applera Corporation | Sample carrier device incorporating radio frequency identification, and method |
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EP1367659A3 (de) * | 2002-05-21 | 2009-10-14 | Semiconductor Energy Laboratory Co., Ltd. | Organischer Feldeffekt-Transistor |
EP1385218A1 (de) * | 2002-07-22 | 2004-01-28 | Ricoh Company, Ltd. | Halbleiteranordnung, el - Anzeigevorrichtung, Flüssigkristallanzeige und Rechner |
US7119366B2 (en) | 2002-07-22 | 2006-10-10 | Ricoh Company, Ltd. | Semiconductor device, EL display device, liquid crystal display device, and calculating device |
US7423292B2 (en) | 2002-07-22 | 2008-09-09 | Ricoh Company, Ltd. | Semiconductor device, EL display device, liquid crystal display device, and calculating device |
CN100403549C (zh) * | 2002-12-19 | 2008-07-16 | 松下电器产业株式会社 | 半导体器件及保持电路 |
JP2005079549A (ja) * | 2003-09-03 | 2005-03-24 | Victor Co Of Japan Ltd | 有機薄膜トランジスタ |
WO2007064334A1 (en) * | 2005-12-02 | 2007-06-07 | Advanced Micro Devices, Inc. | Polymer-based transistor devices, methods, and systems |
Also Published As
Publication number | Publication date |
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US20040029310A1 (en) | 2004-02-12 |
EP1310004A2 (de) | 2003-05-14 |
WO2002015293A3 (de) | 2002-08-01 |
JP2004507096A (ja) | 2004-03-04 |
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