WO2001045151A2 - Dünnschichtwiderstand mit hohem temperaturkoeffizienten als passives halbleiterbauelement für integrierte schaltungen und herstellungsverfahren - Google Patents
Dünnschichtwiderstand mit hohem temperaturkoeffizienten als passives halbleiterbauelement für integrierte schaltungen und herstellungsverfahren Download PDFInfo
- Publication number
- WO2001045151A2 WO2001045151A2 PCT/DE2000/004320 DE0004320W WO0145151A2 WO 2001045151 A2 WO2001045151 A2 WO 2001045151A2 DE 0004320 W DE0004320 W DE 0004320W WO 0145151 A2 WO0145151 A2 WO 0145151A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- wsin
- semiconductor component
- substrate
- passive semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000010409 thin film Substances 0.000 title claims abstract description 5
- 229910008807 WSiN Inorganic materials 0.000 claims abstract description 37
- 238000009413 insulation Methods 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 125
- 239000000758 substrate Substances 0.000 claims description 32
- 238000002161 passivation Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000001465 metallisation Methods 0.000 claims description 15
- 230000005670 electromagnetic radiation Effects 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 230000009258 tissue cross reactivity Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 108091008874 T cell receptors Proteins 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Thermistors And Varistors (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00993458A EP1243022A2 (de) | 1999-12-18 | 2000-12-05 | Dünnschichtwiderstand mit hohem temperaturkoeffizienten als passives halbleiterbauelement für integrierte schaltungen und herstellungsverfahren |
US10/168,184 US6884690B2 (en) | 1999-12-18 | 2000-12-05 | Thin-film resistor with high temperature coefficient for use as passive semiconductor component for integrated circuits, and method for producing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19961180.7 | 1999-12-18 | ||
DE19961180A DE19961180C2 (de) | 1999-12-18 | 1999-12-18 | Dünnschichtwiderstand mit hohem Temperaturkoeffizienten als passives Halbleiterbauelement für integrierte Schaltungen und Herstellungsverfahren |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001045151A2 true WO2001045151A2 (de) | 2001-06-21 |
WO2001045151A3 WO2001045151A3 (de) | 2002-02-14 |
Family
ID=7933222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2000/004320 WO2001045151A2 (de) | 1999-12-18 | 2000-12-05 | Dünnschichtwiderstand mit hohem temperaturkoeffizienten als passives halbleiterbauelement für integrierte schaltungen und herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (1) | US6884690B2 (de) |
EP (1) | EP1243022A2 (de) |
DE (1) | DE19961180C2 (de) |
WO (1) | WO2001045151A2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7129560B2 (en) * | 2003-03-31 | 2006-10-31 | International Business Machines Corporation | Thermal memory cell and memory device including the thermal memory cell |
US7276777B2 (en) * | 2005-07-29 | 2007-10-02 | Triquint Semiconductor, Inc. | Thin film resistor and method of making the same |
US20080185522A1 (en) * | 2007-02-06 | 2008-08-07 | Shih-Chia Chang | Infrared sensors and methods for manufacturing the infrared sensors |
KR102112131B1 (ko) * | 2013-09-27 | 2020-06-04 | 인텔 코포레이션 | 내장형 저항기들에 대해 조정가능한 온도 계수를 형성하는 방법들 |
US10192822B2 (en) * | 2015-02-16 | 2019-01-29 | Globalfoundries Inc. | Modified tungsten silicon |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4760369A (en) * | 1985-08-23 | 1988-07-26 | Texas Instruments Incorporated | Thin film resistor and method |
EP0354369A2 (de) * | 1988-08-12 | 1990-02-14 | Texas Instruments Incorporated | Infrarot-Detektor |
EP0848427A2 (de) * | 1996-12-16 | 1998-06-17 | Matsushita Electronics Corporation | Integrierter Halbleiterschaltkreis und dessen Herstellungsverfahren |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3015356A1 (de) * | 1980-04-22 | 1981-10-29 | Robert Bosch Gmbh, 7000 Stuttgart | Freitragende schichten sowie verfahren zur herstellung freitragender schichten, insbesondere fuer sensoren fuer brennkraftmaschinen |
JPS63261703A (ja) * | 1987-04-17 | 1988-10-28 | 富士通株式会社 | 薄膜抵抗体の製造方法 |
JPH0582519A (ja) * | 1991-09-19 | 1993-04-02 | Nec Corp | 半導体装置の配線及びその製造方法 |
US5260225A (en) * | 1991-12-20 | 1993-11-09 | Honeywell Inc. | Integrated infrared sensitive bolometers |
US5440174A (en) * | 1992-10-20 | 1995-08-08 | Matsushita Electric Industrial Co., Ltd. | Plurality of passive elements in a semiconductor integrated circuit and semiconductor integrated circuit in which passive elements are arranged |
US5466484A (en) * | 1993-09-29 | 1995-11-14 | Motorola, Inc. | Resistor structure and method of setting a resistance value |
JP3287173B2 (ja) * | 1995-04-07 | 2002-05-27 | 三菱電機株式会社 | 赤外線検出素子 |
JP3196823B2 (ja) * | 1997-06-11 | 2001-08-06 | 日本電気株式会社 | 半導体装置 |
JPH1114449A (ja) * | 1997-06-20 | 1999-01-22 | Terumo Corp | 赤外線センサ |
TW345751B (en) * | 1997-08-10 | 1998-11-21 | Jenq-Shyong Shieh | Thermovoltaic generator type solid-state switch a thermovoltaic generator type solid-state switch comprises a single crystal silicon substrate; an MOS field effect transistor; etc. |
JP3826554B2 (ja) * | 1998-03-26 | 2006-09-27 | 松下電工株式会社 | 薄膜サーミスタおよびその製造方法 |
US6329655B1 (en) * | 1998-10-07 | 2001-12-11 | Raytheon Company | Architecture and method of coupling electromagnetic energy to thermal detectors |
US20020132491A1 (en) * | 1998-12-31 | 2002-09-19 | John E. Lang | Method of removing photoresist material with dimethyl sulfoxide |
-
1999
- 1999-12-18 DE DE19961180A patent/DE19961180C2/de not_active Expired - Fee Related
-
2000
- 2000-12-05 WO PCT/DE2000/004320 patent/WO2001045151A2/de active Application Filing
- 2000-12-05 EP EP00993458A patent/EP1243022A2/de not_active Withdrawn
- 2000-12-05 US US10/168,184 patent/US6884690B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4760369A (en) * | 1985-08-23 | 1988-07-26 | Texas Instruments Incorporated | Thin film resistor and method |
EP0354369A2 (de) * | 1988-08-12 | 1990-02-14 | Texas Instruments Incorporated | Infrarot-Detektor |
EP0848427A2 (de) * | 1996-12-16 | 1998-06-17 | Matsushita Electronics Corporation | Integrierter Halbleiterschaltkreis und dessen Herstellungsverfahren |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 01, 31. Januar 2000 (2000-01-31) & JP 11 273907 A (MATSUSHITA ELECTRIC WORKS LTD), 8. Oktober 1999 (1999-10-08) * |
Also Published As
Publication number | Publication date |
---|---|
US6884690B2 (en) | 2005-04-26 |
EP1243022A2 (de) | 2002-09-25 |
DE19961180C2 (de) | 2002-02-28 |
US20020192853A1 (en) | 2002-12-19 |
WO2001045151A3 (de) | 2002-02-14 |
DE19961180A1 (de) | 2001-06-28 |
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