WO2001025144A1 - Verfahren zur herstellung hochreiner salzsaüre - Google Patents
Verfahren zur herstellung hochreiner salzsaüre Download PDFInfo
- Publication number
- WO2001025144A1 WO2001025144A1 PCT/EP2000/009678 EP0009678W WO0125144A1 WO 2001025144 A1 WO2001025144 A1 WO 2001025144A1 EP 0009678 W EP0009678 W EP 0009678W WO 0125144 A1 WO0125144 A1 WO 0125144A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- hydrochloric acid
- column
- hydrogen chloride
- concentration
- chloride solution
- Prior art date
Links
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 title claims abstract description 137
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims abstract description 6
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 35
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 35
- 238000010521 absorption reaction Methods 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 17
- 239000012498 ultrapure water Substances 0.000 claims description 13
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 229920000098 polyolefin Polymers 0.000 claims description 8
- 230000014759 maintenance of location Effects 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 4
- 238000004064 recycling Methods 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 9
- 239000002253 acid Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 5
- 238000004821 distillation Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004813 Perfluoroalkoxy alkane Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/01—Chlorine; Hydrogen chloride
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/01—Chlorine; Hydrogen chloride
- C01B7/07—Purification ; Separation
- C01B7/0706—Purification ; Separation of hydrogen chloride
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/01—Chlorine; Hydrogen chloride
- C01B7/07—Purification ; Separation
- C01B7/0706—Purification ; Separation of hydrogen chloride
- C01B7/0731—Purification ; Separation of hydrogen chloride by extraction
- C01B7/0737—Purification ; Separation of hydrogen chloride by extraction hydrogen chloride being extracted
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Definitions
- the present invention relates to a new process which can be carried out on an industrial scale for the production of high-purity, low-particulate hydrochloric acid for use in semiconductor production.
- the hydrogen chloride gas produced by chlorine electrolysis and subsequent combustion of chlorine and hydrogen contains impurities which cannot be separated from the gas itself or can only be removed with relatively great effort.
- contaminants e.g. B. arsenic, bromine or volatile organic impurities.
- Corresponding impurities are difficult to separate even if the hydrogen chloride gas is introduced into water and the hydrochloric acid resulting therefrom is subsequently subjected to an adiabatic distillation.
- a method suitable for the production of small amounts of high-purity hydrochloric acid has hitherto been carried out in the following manner: hydrogen chloride gas is expelled from a 37% hydrochloric acid by heating. The hydrogen chloride gas is passed through a small retention column to separate droplets and then into one with ultrapure water filled template initiated
- This method ⁇ s: however only suitable for the production of small amounts of hydrochloric acid, i.e. 10 - 20 t / year in batch operation, because with increasing full height the pressure in the system changes constantly. The latter makes continuous operation in the evaporation part of the system impossible or has become require a large and complicated technical effort
- the object of the present invention is now to produce hydrochloric acid for use in the semi-conductor industry on a technical scale in a simple and inexpensive manner, which has an extremely low content of cationic, anionic and particulate impurities.
- the hydrochloric acid produced should have a hydrogen chloride content of 35 - have 38%
- the solution to the problem is a process for the production of high-purity, low-particle hydrochloric acid for use in the semiconductor industry, which is characterized in that a) it is expelled from a hydrochloric acid with a hydrogen chloride content of more than 21% by heating, b) the hydrogen chloride gas is passed through a retention column and a demister, which consist of fluorinated or perfluorinated polyolefin, and c) is then dissolved in an absorption column in ultrapure water to form hydrochloric acid
- the object is also achieved in that water vapor containing HCl gas escaping at the top of the absorption column is passed into a full-body column and condensed in a downstream column
- the concentration of the hydrogen chloride solution can be determined by conductivity measurement. This can be done continuously in a continuous procedure.
- the problem is solved by a corresponding method, which works with a low flow resistance, so that it can be carried out under constant conditions and at a pressure in the range from atmospheric pressure to a slight excess pressure of 500 WS, preferably ⁇ 200 WS
- An embodiment of the process according to the invention consists in that a hydrochloric acid with a concentration of> 32% is produced by recycling the hydrogen chloride solution into the absorption column
- a process variant then consists in that the desired concentration of the hydrochloric acid solution is set by adding ultrapure water
- Any particulate contaminants still present or formed in the high-purity hydrochloric acid can be removed by filtration using a 1- to 3-stage filter system before filling into suitable transport containers.
- the filtration can be carried out successively with filters of decreasing pore size between 1.0 and 0.05 ⁇ m
- the solution initially obtained in the upper column part (8) is cooled with a hydrogen chloride content of less than or equal to 32% in the heat exchanger (9) and then one below the upper one Column part (8) and the cooler (9) arranged second column part (10).
- the escaping gas (HCI and water vapor) is passed from top to bottom via a safety column (13) and then condensed in a cooler.
- the residual concentration of hydrochloric acid can be measured continuously in the condensate running off and the function of the absorption columns can thus be monitored.
- the return of the hydrogen chloride solution to the lower part of the absorption column (10) makes it possible to further increase the concentration of the acid and thus to produce a hydrochloric acid with a concentration of more than 32%.
- a variant of the process consists in first producing a hydrochloric acid with a hydrogen chloride content above the desired concentration and then producing this in a targeted manner by controlled addition of ultrapure water to the desired concentration within a very narrow tolerance range (+ 0.2%) by controlled addition of ultrapure water ,
- the hydrogen chloride stream is separated at a pressure which is not or only slightly increased compared to the surrounding atmospheric pressure liquid shares, such as B traces of acid in the form of liquid droplets, initially via a retention column and via a downstream demister, fed to the absorption column under adiabatic conditions and absorbed there in ultrapure water.
- a hydrochloric acid with a concentration of> 32%, preferably 35 to 40%, the hydrogen chloride solution flowing out of the upper column part (8) is cooled and then the lower column part (10) again for concentrating the acid to the desired content of hydrogen chloride fed.
- high-purity water is supplied.
- the amount of water supplied enables the concentration of the high-purity hydrochloric acid obtained to be controlled in a simple manner, with the concentration of the acid flowing off and thus also the amount of ultrapure water to be added being controlled by a continuous conductivity measurement at the outlet of the 2. Part of the column can take place.
- the water vapor escaping at the top of the absorption column and possibly still containing very small amounts of HCI gas is shielded from the outside atmosphere by a packed column (13).
- the water vapor is condensed in a downstream condenser.
- the concentration of the hydrogen chloride is continuously measured by conductivity measurement.
- the product obtained is preferably collected in storage containers lined with fluorinated or perfluorinated polyolefin materials. After the quality inspection, the hydrochloric acid is released and filled via a so-called “Clean Coupling Box” into transport containers lined with fluorinated or perfluorinated polyolefin materials, or directly into suitable "small containers", both of which comply with DIN ISO regulations.
- the hydrochloric acid is filtered to remove particles before filling into suitable storage containers in a 2 - 3-stage filtration system, with particles in succession having an average diameter> 1 ⁇ m,> 0.2 ⁇ m and> 0.1 - 0.05 ⁇ m are separated.
- the parts of the system which come into contact with the hydrochloric acid or the hydrogen chloride gas or also with the ultrapure water, but also the storage containers are made of materials which, under the given conditions, give off neither ionogenic nor particulate impurities.
- materials are polyolefin-based materials, preferably fluorinated or perfluorinated polyolefins such as PVDF, PFA, PTFE and PTFE-TFM.
- PVDF, PFA and PTFE-TFM are particularly suitable from both qualitative and economic aspects.
- hydrochloric acid qualities with very low hydrogen chloride content but also with up to 40% can be produced on a large scale in the plant according to the invention described.
- concentrations of possible cationic impurities in the hydrochloric acid obtained according to the invention are so low that they can either no longer be detected using the currently available analysis methods for hydrochloric acid or that they are very close to the detection limit currently achievable, i. H. they are below the detection limit of ⁇ 0.05 ppb.
- the content of anionic impurities is also in almost all cases below the analytical detection limit currently achievable in hydrochloric acid.
- Table 1 shows analytical values which were determined in a high-purity hydrochloric acid prepared by the claimed process.
- FIG. 1 shows the construction according to the invention of a plant for carrying out the process according to the invention for producing high-purity, low-particulate hydrochloric acid for use in the semiconductor industry.
- the system has the following elements:
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Gas Separation By Absorption (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001528103A JP4718077B2 (ja) | 1999-10-07 | 2000-10-04 | 高純度の塩酸の製造 |
AU75248/00A AU7524800A (en) | 1999-10-07 | 2000-10-04 | Method for producing high-purity hydrochloric acid |
US10/110,064 US6793905B1 (en) | 1999-10-07 | 2000-10-04 | Method for producing high-purity hydrochloric acid |
EP00964269A EP1218291A1 (de) | 1999-10-07 | 2000-10-04 | Verfahren zur herstellung hochreiner salzsaüre |
CA002387584A CA2387584A1 (en) | 1999-10-07 | 2000-10-04 | Production of high purity hydrochloric acid |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19948206A DE19948206A1 (de) | 1999-10-07 | 1999-10-07 | Verfahren zur Herstellung hochreiner Salzsäure |
DE19948206.3 | 1999-10-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001025144A1 true WO2001025144A1 (de) | 2001-04-12 |
Family
ID=7924745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2000/009678 WO2001025144A1 (de) | 1999-10-07 | 2000-10-04 | Verfahren zur herstellung hochreiner salzsaüre |
Country Status (11)
Country | Link |
---|---|
US (1) | US6793905B1 (de) |
EP (1) | EP1218291A1 (de) |
JP (1) | JP4718077B2 (de) |
KR (1) | KR100742477B1 (de) |
CN (1) | CN100473600C (de) |
AU (1) | AU7524800A (de) |
CA (1) | CA2387584A1 (de) |
DE (1) | DE19948206A1 (de) |
MY (1) | MY128168A (de) |
TW (1) | TW539646B (de) |
WO (1) | WO2001025144A1 (de) |
Cited By (3)
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---|---|---|---|---|
EP1318101A2 (de) * | 2001-12-10 | 2003-06-11 | Basf Aktiengesellschaft | Verfahren zur Herstellung von weitgehend HBr-freiem HCI-Gas und weitgehend HBr-freier wässriger HCI-Lösung |
CN106241925A (zh) * | 2016-08-26 | 2016-12-21 | 云南盐化股份有限公司 | 制盐循环冷却水回收装置 |
WO2017199120A1 (en) * | 2016-05-19 | 2017-11-23 | Sabic Global Technologies B.V. | Processes for separating organic impurities from aqueous inorganic acids |
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DE10257093B4 (de) * | 2002-12-05 | 2005-02-24 | Basf Ag | Aerosolabscheider und Verfahren zur Reinigung von gasförmigem Schwefeltrioxid durch Abscheidung darin dispergierter Flüssigkeiten |
CN100372756C (zh) * | 2004-01-15 | 2008-03-05 | 山东滨化集团有限责任公司 | 试剂级盐酸的生产方法 |
KR20060071274A (ko) * | 2004-12-21 | 2006-06-26 | 삼성정밀화학 주식회사 | 35 % 염산의 제조방법 |
DE102007016973A1 (de) * | 2007-04-10 | 2008-10-16 | Bayer Materialscience Ag | Regenerativer Adsorptionsprozess zur Entfernung organischer Komponenten aus einem Gasstrom |
DE102007020144A1 (de) * | 2007-04-26 | 2008-10-30 | Bayer Materialscience Ag | Kondensations-Adsorptionsprozess zur Entfernung organischer Komponenten aus einem Chlorwasserstoff enthaltenden Gasstrom |
DE102007033524A1 (de) * | 2007-07-19 | 2009-01-22 | Bayer Materialscience Ag | Regeneration eines mit Hexachlorostannat beladenen Anionenaustauschers |
DE202008011956U1 (de) | 2008-09-08 | 2008-11-06 | Mikrowellen-Systeme Mws Gmbh | Subboiling-Apparatur |
CN101993041B (zh) * | 2009-08-27 | 2013-06-26 | 林大昌 | 氨基葡萄糖盐酸盐的废酸液中回收循环使用盐酸的方法 |
CN102398895B (zh) * | 2010-09-16 | 2014-09-24 | 上海化学试剂研究所 | 一种超纯电子级化学试剂的生产方法 |
CN102060271B (zh) * | 2011-02-21 | 2013-01-23 | 上海正帆科技有限公司 | 电子级盐酸生产方法 |
CN102515102A (zh) * | 2011-12-16 | 2012-06-27 | 天津市泰亨气体有限公司 | 一种高纯氯化氢的合成方法 |
US9573808B2 (en) | 2013-07-31 | 2017-02-21 | Schlumberger Technology Corporation | Aqueous solution and method for use thereof |
US9920606B2 (en) | 2013-07-31 | 2018-03-20 | Schlumberger Technology Corporation | Preparation method, formulation and application of chemically retarded mineral acid for oilfield use |
US9796490B2 (en) | 2013-10-24 | 2017-10-24 | Schlumberger Technology Corporation | Aqueous solution and method for use thereof |
US9476287B2 (en) | 2013-11-05 | 2016-10-25 | Schlumberger Technology Corporation | Aqueous solution and method for use thereof |
KR20180064511A (ko) * | 2015-12-22 | 2018-06-14 | 쇼와 덴코 가부시키가이샤 | 염화수소 혼합물과 그 제조 방법 및 충전 용기 |
CN109650340B (zh) * | 2018-12-26 | 2021-01-15 | 江阴江化微电子材料股份有限公司 | 一种电子级盐酸生产方法 |
CN109534293B (zh) * | 2018-12-26 | 2024-01-05 | 江阴江化微电子材料股份有限公司 | 一种电子级盐酸纯化系统 |
CN110589784B (zh) * | 2019-10-08 | 2021-11-23 | 中国计量科学研究院 | 一种实验室级超纯硝酸的精细串联纯化系统与纯化方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2473898A1 (fr) * | 1980-01-23 | 1981-07-24 | Bljum Grigory | Procede d'epuration des impuretes contenues dans une solution aqueuse d'un corps gazeux |
JPH0543203A (ja) * | 1991-08-13 | 1993-02-23 | Mitsui Toatsu Chem Inc | 塩酸蒸留装置 |
JPH10231103A (ja) * | 1996-12-16 | 1998-09-02 | Tsurumi Soda Co Ltd | 高純度塩酸の製造装置及び製造方法 |
US5846387A (en) * | 1994-01-07 | 1998-12-08 | Air Liquide Electronics Chemicals & Services, Inc. | On-site manufacture of ultra-high-purity hydrochloric acid for semiconductor processing |
Family Cites Families (7)
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DE2155849C3 (de) * | 1971-11-10 | 1979-07-26 | Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg | Verfahren zur Herstellung eines stabilisierenden und/oder isolierenden Überzuges auf Halbleiteroberflächen |
US4214920A (en) * | 1979-03-23 | 1980-07-29 | Exxon Research & Engineering Co. | Method for producing solar cell-grade silicon from rice hulls |
US5407349A (en) * | 1993-01-22 | 1995-04-18 | International Business Machines Corporation | Exhaust system for high temperature furnace |
US5632866A (en) * | 1994-01-12 | 1997-05-27 | Fsi International, Inc. | Point-of-use recycling of wafer cleaning substances |
US6050283A (en) * | 1995-07-07 | 2000-04-18 | Air Liquide America Corporation | System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing |
US6132522A (en) * | 1996-07-19 | 2000-10-17 | Cfmt, Inc. | Wet processing methods for the manufacture of electronic components using sequential chemical processing |
KR100502706B1 (ko) * | 1996-12-16 | 2005-10-13 | 쯔루미소다 가부시끼가이샤 | 고순도염산의제조장치및제조방법 |
-
1999
- 1999-10-07 DE DE19948206A patent/DE19948206A1/de not_active Withdrawn
-
2000
- 2000-10-03 TW TW089120579A patent/TW539646B/zh not_active IP Right Cessation
- 2000-10-04 US US10/110,064 patent/US6793905B1/en not_active Expired - Lifetime
- 2000-10-04 KR KR1020027004429A patent/KR100742477B1/ko not_active IP Right Cessation
- 2000-10-04 CA CA002387584A patent/CA2387584A1/en not_active Abandoned
- 2000-10-04 EP EP00964269A patent/EP1218291A1/de not_active Withdrawn
- 2000-10-04 CN CNB008138648A patent/CN100473600C/zh not_active Expired - Fee Related
- 2000-10-04 WO PCT/EP2000/009678 patent/WO2001025144A1/de active Application Filing
- 2000-10-04 AU AU75248/00A patent/AU7524800A/en not_active Abandoned
- 2000-10-04 JP JP2001528103A patent/JP4718077B2/ja not_active Expired - Fee Related
- 2000-10-05 MY MYPI20004651A patent/MY128168A/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2473898A1 (fr) * | 1980-01-23 | 1981-07-24 | Bljum Grigory | Procede d'epuration des impuretes contenues dans une solution aqueuse d'un corps gazeux |
JPH0543203A (ja) * | 1991-08-13 | 1993-02-23 | Mitsui Toatsu Chem Inc | 塩酸蒸留装置 |
US5846387A (en) * | 1994-01-07 | 1998-12-08 | Air Liquide Electronics Chemicals & Services, Inc. | On-site manufacture of ultra-high-purity hydrochloric acid for semiconductor processing |
JPH10231103A (ja) * | 1996-12-16 | 1998-09-02 | Tsurumi Soda Co Ltd | 高純度塩酸の製造装置及び製造方法 |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 017, no. 342 (C - 1076) 29 June 1993 (1993-06-29) * |
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 14 31 December 1998 (1998-12-31) * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1318101A2 (de) * | 2001-12-10 | 2003-06-11 | Basf Aktiengesellschaft | Verfahren zur Herstellung von weitgehend HBr-freiem HCI-Gas und weitgehend HBr-freier wässriger HCI-Lösung |
EP1318101A3 (de) * | 2001-12-10 | 2004-01-02 | Basf Aktiengesellschaft | Verfahren zur Herstellung von weitgehend HBr-freiem HCI-Gas und weitgehend HBr-freier wässriger HCI-Lösung |
US6890508B2 (en) | 2001-12-10 | 2005-05-10 | Basf Aktiengesellschaft | Preparation of largely HBr-free HCI gas and largely HBr-free aqueous HCI solution |
WO2017199120A1 (en) * | 2016-05-19 | 2017-11-23 | Sabic Global Technologies B.V. | Processes for separating organic impurities from aqueous inorganic acids |
CN106241925A (zh) * | 2016-08-26 | 2016-12-21 | 云南盐化股份有限公司 | 制盐循环冷却水回收装置 |
Also Published As
Publication number | Publication date |
---|---|
JP4718077B2 (ja) | 2011-07-06 |
DE19948206A1 (de) | 2001-04-12 |
AU7524800A (en) | 2001-05-10 |
CA2387584A1 (en) | 2001-04-12 |
MY128168A (en) | 2007-01-31 |
TW539646B (en) | 2003-07-01 |
JP2003511329A (ja) | 2003-03-25 |
KR100742477B1 (ko) | 2007-07-25 |
US6793905B1 (en) | 2004-09-21 |
CN1377323A (zh) | 2002-10-30 |
EP1218291A1 (de) | 2002-07-03 |
CN100473600C (zh) | 2009-04-01 |
KR20020048949A (ko) | 2002-06-24 |
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