WO2000069220A1 - Plaque chauffante et pate conductrice - Google Patents

Plaque chauffante et pate conductrice Download PDF

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Publication number
WO2000069220A1
WO2000069220A1 PCT/JP2000/002873 JP0002873W WO0069220A1 WO 2000069220 A1 WO2000069220 A1 WO 2000069220A1 JP 0002873 W JP0002873 W JP 0002873W WO 0069220 A1 WO0069220 A1 WO 0069220A1
Authority
WO
WIPO (PCT)
Prior art keywords
weight
hot plate
bismuth
noble metal
particles
Prior art date
Application number
PCT/JP2000/002873
Other languages
English (en)
Japanese (ja)
Inventor
Yanling Zhou
Original Assignee
Ibiden Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co., Ltd. filed Critical Ibiden Co., Ltd.
Priority to EP00922932A priority Critical patent/EP1185144A1/fr
Publication of WO2000069220A1 publication Critical patent/WO2000069220A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits

Definitions

  • the present invention relates to a hot plate and a conductive paste using a ceramic substrate.
  • a heating device called a hot plate In the semiconductor manufacturing process, for example, when heating and drying a silicon wafer that has undergone a photosensitive resin coating step, a heating device called a hot plate is usually used.
  • a ceramic substrate such as alumina is generally used.
  • a resistor as a conductor pattern layer is formed in a predetermined pattern on one side of the alumina substrate, and a terminal connection pad is formed on a part of the resistor.
  • Such a conductor pattern layer is formed by printing and applying a silver paste for an alumina substrate to a substrate, and then heating and baking. After that, terminal pins are soldered to the pads, and the terminal pins are connected to the power supply via wiring. Then, a silicon wafer to be heated is placed on the upper surface of the hot plate, and by applying a current to the resistor in this state, the silicon wafer is heated to 1 oo ° C or more. I have.
  • a glass frit based on lead borosilicate 1 weight 0 /. ⁇ 10 weights. / 0, binder 1% to 1 0% by weight, solvent 1 0 wt 1% to 3 0% by weight as I contains is generally used (JP-4 one 3 0 0 2 4 No. 9).
  • glass frit which is a sub-component, is required to ensure suitable adhesion to the conductor pattern layer.
  • the above-mentioned conventional lead-based paste is directly applied to a ceramic plate, the following inconvenience occurs.
  • the heat in the paste baking causes the oxide in the paste to act on the ceramic, and for example, if the ceramic is aluminum nitride, a reaction that generates a large amount of gas such as nitrogen gas occurs. I will.
  • the main cause for this is thought to be the high lead oxide content in the glass frit.
  • the high-pressure nitrogen gas generated during paste baking passes through the grain boundaries of the silver particles and tries to escape to the outside. As a result, blisters are likely to occur in the conductor pattern layer, and the accuracy of the formed pattern deteriorates.
  • An object of the present invention is to provide a hot plate provided with a conductive pattern layer having little swelling and excellent adhesion, and a conductive paste suitable for manufacturing the hot plate.
  • a first aspect of the present invention provides a hot plate using a ceramic substrate provided with a conductor layer.
  • the conductor layer is composed of bismuth or bismuth oxide, glass frit, and noble metal particles.
  • the conductor layer contains bismuth or bismuth oxide, which is more easily oxidized and reduced than the oxide contained in the glass frit.
  • the occurrence of blisters is suppressed even if the amount of glass frit is large.
  • the amount of glass frit added can be increased (to 1% by weight or more based on the noble metal particles), the adhesion of the conductor layer is also improved.
  • a second aspect of the present invention provides a hot plate having a conductor layer having a bismuth or bismuth oxide content of 18% by weight or less. This is 18 weight. /. Over In such a case, the bismuth oxide and the noble metal particles are separated, and a uniform resistance cannot be obtained.
  • a third aspect of the present invention provides a hot plate, wherein the ceramic substrate is a nitride ceramic substrate or a carbide ceramic substrate.
  • Nitride ceramic substrates and carbide ceramic substrates have excellent thermal conductivity and react with glass frit to generate gas.
  • an aluminum nitride substrate having excellent heat resistance and high thermal conductivity among nitride ceramic substrates a practical hot plate that can withstand use at high temperatures can be obtained.
  • the carbide ceramic substrate a silicon carbide substrate can be used as the carbide ceramic substrate.
  • a fourth aspect of the present invention provides a hot plate having a conductor layer having a glass frit containing zinc borosilicate. It is presumed that glass frit containing zinc borosilicate reacts with nitrides and carbides in the ceramic substrate to generate nitrogen gas, and bismuth or bismuth oxide suppresses such a reaction. Therefore, even if the conductor layer is formed using a material containing this as a component, a large amount of gas is not generated, and blistering is less likely to occur in the conductor layer.
  • a fifth aspect of the present invention provides a hot plate having a conductor layer containing as a noble metal particle at least one selected from gold particles, silver particles, platinum particles and palladium particles.
  • Gold particles, silver particles, platinum particles and palladium particles are relatively resistant to oxidation even when exposed to high temperatures and exhibit a sufficiently large resistance value, so that a conductor layer suitable as a resistor for heat generation can be easily obtained. Can be.
  • a sixth aspect of the present invention provides a hot plate having a conductor layer made of bismuth or bismuth oxide, glass frit, noble metal particles, and an organic vehicle.
  • a seventh aspect of the present invention provides a hot plate, wherein the content of bismuth or bismuth oxide in the conductor layer is 18% by weight or less.
  • FIG. 1 is a schematic sectional view of a hot-air tune unit according to an embodiment of the present invention.
  • FIG. 2 is an enlarged sectional view of a main part of a hot plate unit according to one embodiment.
  • the hot plate unit 1 shown in FIG. 1 includes a casing 2 and a hot plate 3.
  • the casing 2 is a metal member having a bottom and has an opening 4 having a circular cross section on an upper side thereof.
  • the casing 2 is not limited to the bottomed one, and may be a bottomless one.
  • the hot plate 3 is attached to the opening 4 via a seal ring 14.
  • the hot plate 3 of the present embodiment composed of the ceramic substrate 9 is a low-temperature hot plate 3 for drying a silicon wafer W1 coated with a photosensitive resin at 50 ° C. to 300 ° C. .
  • a nitride ceramic substrate having excellent heat resistance and high thermal conductivity is preferably selected.
  • an aluminum nitride substrate, a silicon nitride substrate, a boron nitride substrate It is preferable to select a titanium nitride substrate.
  • This ceramic substrate 9 has a thickness of about 1 mn! It has a disk shape of about 10 Omm, and is designed to have a slightly smaller diameter than the outer dimensions of the casing 2.
  • a wiring resistance 10 as a conductor layer or a conductor pattern layer is formed concentrically or spirally on the lower surface side of the ceramic substrate 9.
  • a pad 10 a is formed at an end of the wiring resistance 10.
  • the wiring resistance 10 and the pad 10a are made of a conductive paste (noble metal base) P on the surface of the ceramic substrate 9. After printing 1, it is heated and baked.
  • the opposite side of the conductor pattern layer, that is, the upper surface side is the heating surface of the silicon wafer W1.
  • the wiring resistance 10 and the pad 10a of the present embodiment derived from the noble metal paste P1 contain noble metal particles as a main component, and further contain subcomponents such as glass frit.
  • the noble metal particles used in the present embodiment are preferably scaly noble metal particles having an average particle diameter of 6 ⁇ m or less.
  • the scaly noble metal particles are preferably at least one selected from gold particles (Au particles), silver particles (Ag particles), platinum particles (Pt particles), and palladium particles (Pd particles). This is because these precious metals are relatively hard to oxidize even when exposed to high temperatures and have a sufficiently large resistance value to generate heat when energized. These precious metals may be used alone or in combination of two, three or four as described below. Ag-Au, Ag-Pt, Ag-Pd, Au-Pt, Au-Pd, Pt-Pd, Ag-Au-Pt, Ag-Au-Pd, Au-Pt -Pd, Ag-Au-Pt-Pd may be used in combination. As shown in FIGS.
  • a base end of a terminal pin 12 made of a conductive material is soldered to each of the hats 10a.
  • electrical continuity between each terminal pin 12 and the wiring resistance 10 is achieved.
  • a socket 6 a at the end of the lead wire 6 is fitted to the end of each terminal pin 12. Therefore, when a current is supplied to the wiring resistance 10 via the lead wire 6 and the terminal pin 12, the temperature of the wiring resistance 10 rises, and the entire hot plate 3 is heated.
  • a mixture is prepared by adding a sintering aid such as yttria and a binder to the ceramic powder, if necessary, and the mixture is uniformly kneaded with three rolls. Using this kneaded material as a material, a plate-shaped formed body with a thickness of 1 to 10 Omm is produced by breath molding. I do.
  • a sintering aid such as yttria and a binder
  • Drilling is performed by punching or drilling on the produced formed body to form a pin insertion hole (not shown).
  • the formed body after the drilling step is dried, pre-baked and main-baked to be completely sintered, thereby producing a substrate 9 made of a ceramic sintered body.
  • the firing step is preferably performed by a hot press device, and its temperature is preferably set to about 150 ° C. to 2000 ° C.
  • the ceramic substrate 9 is cut into a circular shape having a predetermined diameter (230 in this embodiment) and is subjected to surface grinding using a puff polishing device.
  • a precious metal paste P1 prepared in advance is uniformly applied to the lower surface of the ceramic substrate 9 by screen printing.
  • the noble metal paste P1 used here contains, in addition to the noble metal particles, bismuth or bismuth oxide, glass frit, a resin binder, and a solvent.
  • the reason why bismuth (B i) or its oxide (bismuth oxide: Bi 2 ⁇ 3 ) was added to the noble metal paste P 1 is as follows. That is, when these substances are added, it is considered that the reaction between the glass frit and aluminum nitride or silicon carbide is suppressed, and the occurrence of blistering is suppressed as compared with the conventional one, and the wiring resistance 10 and This is because the test results show that the adhesion of the pad 10a is also improved. Bismuth and its oxides are relatively easily oxidized and reduced compared to other oxides, and this property contributes to suppressing blistering and improving adhesion in some way. And at the moment are speculated.
  • bismuth oxide reacts with aluminum nitride during paste baking to generate alumina and nitrogen gas, that is, acts as an oxidizing agent for aluminum nitride.
  • bismuth is easily oxidized to be bismuth oxide when exposed to air, it may be indirectly understood that this is also an oxidizing agent for aluminum nitride.
  • silicon nitride is selected as a substrate material. Bismuth oxide It reacts with silicon nitride during baking to generate silica and nitrogen gas, which acts as an oxidizing agent for silicon nitride. Similarly, it can be understood that bismuth is also indirectly an oxidizing agent for silicon nitride.
  • Bismuth or bismuth oxide is present in small amounts in the precious metal paste P1, specifically 0.1 weight. /. ⁇ 10 weight. /.
  • the content is preferably about 1% to 5% by weight, more preferably about 1% to 5% by weight, and particularly preferably about 2% to 3% by weight. If the content is too small, the effect of the addition cannot be sufficiently expected, and this does not lead to prevention of blistering and remarkable improvement in adhesion. Conversely, if the content of the above substances is too large, the reaction for generating nitrogen gas is promoted, and in some cases, there is a possibility that blisters may be induced.
  • the amount of the glass frit is preferably not more than a fraction of the amount of the noble metal particles. The reason is that if the glass frit component in the noble metal paste P1 is at this level, the amount of generated nitrogen gas is not so large, and the adhesion of the wiring resistance 10 and the pad 10a is not impaired. is there. Further, if the conductive component in the noble metal paste P1 increases, the specific resistance of the wiring resistance 10 can be reduced.
  • the noble metal particles in the noble metal paste P1 are 60 weight. /. About 80% by weight, 1 weight of glass frit. /. About 10% by weight.
  • the Garasufuri' bets, borosilicate zinc (S i 0 2: B 2 0:,: Z N_ ⁇ 2) is preferably used those containing, but especially, the borosilicate zinc as a base containing (i.e. as a main component) Use is more preferred. More specifically, it is desirable to use zinc borosilicate as a base, to which a small amount of oxide is added. Specific examples of oxides include aluminum oxide (A ⁇ J), yttrium oxide (Y 2 O j, lead oxide (PbO), cadmium oxide (C d ⁇ ), chromium oxide (COJ, copper oxide (CuO)). The oxides listed here may be added alone to zinc borosilicate, or may be added in combination of two or more. Oxide is used as an oxidizing agent for substrate materials. In order to act, they are reduced.
  • the weight ratio of the various oxides listed above is preferably about 1/20 to 1/5 times the weight ratio of zinc borosilicate. If the weight ratio is too small, the abundance of the oxide in the glass frit will increase, and it may not be possible to sufficiently prevent blistering due to nitrogen gas. Conversely, if the weight ratio is too large, the abundance of the oxide in the glass frit will decrease, and the adhesion of the wiring resistance 10 may not be sufficiently improved.
  • resin binder as organic vehicle in noble metal paste P1. /. About 15% by weight, and about 10% to 30% by weight of a solvent.
  • resin binder include celluloses such as ethyl cellulose.
  • the solvent is a component added for the purpose of improving printability and dispersibility, and specific examples thereof include acetates, cellosolves such as butyl sorbitol, and carbitols such as butyl carbitol.
  • the solvents listed here may be used alone or as a mixture of two or more.
  • the solvent in the noble metal paste P1 evaporates, and the wiring resistance 10 and the pads 10a are baked on the ceramic substrate 9.
  • the molten glass frit tends to move in a direction approaching the surface of the ceramic substrate 9, and conversely, the noble metal particles tend to move in a direction away from the surface of the ceramic substrate 9.
  • Hot plate unit 1 is completed.
  • the hot plate unit 1 has no blisters and has a high tensile strength resistor. Further, since the resistance value of the resistor has a small variation, the heating surface of the hot plate is heated to a uniform temperature.
  • the molded body was degreased at 350 ° C. for 4 hours in a nitrogen atmosphere to thermally decompose the binder. Further, the degreased compact was fired by hot press at 160 ° C. for 3 hours to obtain an aluminum nitride substrate as the ceramic substrate 9. The pressure of the hot press was set to 150 kg / cm 2 .
  • a paste application step was performed.
  • eight kinds of Snaps were prepared according to the above procedure, using a noble metal paste P1 having the following composition and setting the thickness at the time of application to about 25 m (see Table 1). ).
  • the noble metal particles only one flaky silver particle having an average particle size of 5 ⁇ m was used.
  • the amount of silver particles added to the silver paste as the noble metal paste P 1 was 65 weight for samples 2 and 7. /. Was set to 70% by weight.
  • the amount of bismuth added was set to 3% by weight for samples 1, 3, 4, and 5 (ie, Examples 1, 3, 4, and 5) and to 2% by weight for sample 2 (ie, Example 2).
  • the other samples (Comparative Examples 1, 2, and 3) were set to 0% by weight.
  • Ethyl cellulose is selected as the resin binder, and butyl carb is used as the solvent.
  • the addition amount of the noble metal paste P1 was set to 5% by weight and 15% by weight, respectively.
  • beta borosilicate zinc 8 OWT%, the A 1 2 0 3 1 Owt% , including C r 2 0 3 1 Owt% ⁇ :. borosilicate zinc 9 0 wt%, 5 wt% of P B_ ⁇ , Contains 5 wt% of CdO.
  • Comparative Example 3 blistering was observed, and the pattern formation accuracy was poor.
  • Comparative Examples 1 and 2 although no blistering was observed, the tensile strength was about half of the value of the tensile strength of each of Examples 1 to 5. In other words, it was proved that the addition of a small amount of bismuth was extremely effective in improving the tensile strength.
  • Example 6 the silicon nitride powder (average particle size 1. 1 / im) 4 5 parts by weight, Y 2 0 3 (flat Hitoshitsubu ⁇ 0. 4 / im) 2 0 parts by weight, A 1 2 0 3 ( .
  • a kneaded product obtained by uniformly kneading the mixture thus obtained was put into a press mold and pressed to produce a plate-shaped formed body.
  • the molded body was degreased at 350 ° C. for 4 hours in a nitrogen atmosphere to thermally decompose the binder. Further, the degreased molded body was subjected to hot press firing at 160 ° C. for 3 hours to obtain a silicon nitride substrate as the ceramic substrate 9. It should be noted that the pressure of the hot press was set to 1 5 0 k gZ cm 2. After that, the substrate was cut out and the surface was ground, and then a paste application step was performed.
  • the noble metal paste P 1 has the following composition, and The thickness at the time of application was set to about 25 m to produce Sanal 9.
  • bismuth oxide was used instead of bismuth.
  • Zn_ ⁇ is 5.6 parts by weight, 1) 0 0.6 parts by weight, • B i 2 0 3: 2. 1 part by weight,
  • Example 6 Then, by heating the applied noble metal paste P1 at a temperature of about 750 ° C. for a predetermined time, the wiring resistance 10 and the pad 10a were baked, and the hot plate 3 of Example 6 was completed.
  • Examples 7 and 8 in 45 parts by weight of silicon carbide powder (average particle size: 1.1 / xm), 0.5 parts by weight of C (force), an acrylic resin binder (trade name, manufactured by Mitsui Chemicals, Inc.) : SA-545, acid value 1.0) 8 parts by weight were mixed.
  • a kneaded product obtained by uniformly kneading the mixture thus obtained was placed in a press mold and pressed to produce a plate-shaped formed body.
  • the molded body was degreased at 350 ° C. for 4 hours in a nitrogen atmosphere to thermally decompose the binder. Further, the degreased compact was fired by hot press at 1900 ° C. for 3 hours to obtain a silicon nitride substrate as ceramic substrate 9. The pressure of the hot press was set to 150 kg gZc rrr '. Further, the silicon nitride substrate was fired in the air to provide an Sio 2 layer on the surface.
  • samples 10 and 11 were obtained by performing the first paste coating process using the noble metal paste P 1 having the following composition (that is, pastes A and B). Produced. Paste A>
  • Example 6 With respect to the samples 9, 10, and 11 of the obtained Examples 6, 7, and 8, the same comparative test as that of Examples 1 to 5 and Comparative Examples 1 to 3 was performed. As a result, in Examples 6 and 7, no swelling was observed in the wiring resistance 10 and the pad 10a. In Example 8, in addition to blistering, the temperature difference on the heated surface was as large as 5 ° C.
  • the occurrence of blisters can be suppressed without reducing the amount of glass frit added, and the adhesion can be improved. Therefore, a highly reliable hot plate 3 with excellent pattern formation accuracy can be obtained.
  • Examples 1 to 5 an aluminum nitride substrate having particularly excellent heat resistance and high thermal conductivity is used as the ceramic substrate 9. Therefore, a practical hot plate 3 that can withstand use at high temperatures can be obtained.
  • Spherical precious metal particles may be used instead of scaly precious metal particles.
  • it is not limited to using only one kind of precious metal particles, and two kinds (for example, scale-like ones and spherical ones) or more may be used as needed.
  • the ceramic substrate 9 made of aluminum nitride or silicon nitride is not limited to one manufactured by a press molding method, but may be one manufactured by a sheet molding method using a doctor blade device, for example.
  • the sheet forming method for example, the wiring resistance 10 can be provided between the stacked sheets, so that the hot plate 3 for high temperature can be manufactured relatively easily.
  • the conductor pattern layer is not limited to the wiring resistance 10 ⁇ pad 1 Oa exemplified in the embodiment, but may be another conductor pattern layer, that is, a conductor pattern layer that is not a heating resistor.
  • the noble metal base P1 As a method of applying the noble metal base P1 to the ceramic substrate 9, not only a screen printing method but also, for example, a stamping method and other methods. •
  • the above oxides are not only contained in the noble metal paste P1 as a separate component from the glass frit, but are also contained in the noble metal paste P1 as added to the glass frit as a sub-component of the glass frit. May be. However, the oxide contained as a sub-component of the glass frit is preferable in that it is uniformly dispersed in the noble metal paste P1.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Resistance Heating (AREA)
  • Surface Heating Bodies (AREA)
  • Non-Adjustable Resistors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Conductive Materials (AREA)

Abstract

L'invention concerne une plaque chauffante comportant une couche de réseau conducteur qui présente de petites protubérances et possède une très bonne adhérence. La plaque chauffante (3) comporte des couches (10, 10a) de réseau conducteur situées sur un substrat (9) céramique et constituées de bismuth, d'oxyde de bismuth, de fritte de verre et de particules de métal noble.
PCT/JP2000/002873 1999-05-07 2000-05-01 Plaque chauffante et pate conductrice WO2000069220A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP00922932A EP1185144A1 (fr) 1999-05-07 2000-05-01 Plaque chauffante et pate conductrice

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP11/126972 1999-05-07
JP12697299 1999-05-07
JP2000126785A JP2001028290A (ja) 1999-05-07 2000-04-27 ホットプレート及び導体ペースト
JP2000/126785 2000-04-27

Publications (1)

Publication Number Publication Date
WO2000069220A1 true WO2000069220A1 (fr) 2000-11-16

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PCT/JP2000/002873 WO2000069220A1 (fr) 1999-05-07 2000-05-01 Plaque chauffante et pate conductrice

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EP (1) EP1185144A1 (fr)
JP (1) JP2001028290A (fr)
WO (1) WO2000069220A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0108888D0 (en) * 2001-04-09 2001-05-30 Du Pont Conductor composition IV
US7157023B2 (en) 2001-04-09 2007-01-02 E. I. Du Pont De Nemours And Company Conductor compositions and the use thereof
US20090266409A1 (en) * 2008-04-28 2009-10-29 E.I.Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
JP5726698B2 (ja) * 2011-07-04 2015-06-03 株式会社日立製作所 ガラス組成物、それを含むガラスフリット、それを含むガラスペースト、およびそれを利用した電気電子部品
DE102015119763A1 (de) 2015-11-16 2017-05-18 Heraeus Quarzglas Gmbh & Co. Kg Infrarotstrahler

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0439812A (ja) * 1990-06-02 1992-02-10 Tanaka Kikinzoku Internatl Kk 導体組成物
JPH0496201A (ja) * 1990-08-05 1992-03-27 Yamamura Glass Co Ltd 発熱体
JPH05114305A (ja) * 1991-10-23 1993-05-07 Asahi Chem Ind Co Ltd 焼成用ペースト
JPH08148030A (ja) * 1994-11-24 1996-06-07 Murata Mfg Co Ltd 導電性ペースト
JPH08148375A (ja) * 1994-11-18 1996-06-07 Nippon Carbide Ind Co Inc 導電性ペースト
JPH1140330A (ja) * 1997-07-19 1999-02-12 Ibiden Co Ltd ヒーターおよびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0439812A (ja) * 1990-06-02 1992-02-10 Tanaka Kikinzoku Internatl Kk 導体組成物
JPH0496201A (ja) * 1990-08-05 1992-03-27 Yamamura Glass Co Ltd 発熱体
JPH05114305A (ja) * 1991-10-23 1993-05-07 Asahi Chem Ind Co Ltd 焼成用ペースト
JPH08148375A (ja) * 1994-11-18 1996-06-07 Nippon Carbide Ind Co Inc 導電性ペースト
JPH08148030A (ja) * 1994-11-24 1996-06-07 Murata Mfg Co Ltd 導電性ペースト
JPH1140330A (ja) * 1997-07-19 1999-02-12 Ibiden Co Ltd ヒーターおよびその製造方法

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JP2001028290A (ja) 2001-01-30
EP1185144A1 (fr) 2002-03-06

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