WO2000065577A1 - Dispositif de liaison par interaction d'echange et procede de fabrication correspondant, dispositif a effet magnetoresistant et tete magnetique - Google Patents

Dispositif de liaison par interaction d'echange et procede de fabrication correspondant, dispositif a effet magnetoresistant et tete magnetique Download PDF

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Publication number
WO2000065577A1
WO2000065577A1 PCT/JP1999/002149 JP9902149W WO0065577A1 WO 2000065577 A1 WO2000065577 A1 WO 2000065577A1 JP 9902149 W JP9902149 W JP 9902149W WO 0065577 A1 WO0065577 A1 WO 0065577A1
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Prior art keywords
film
layer
exchange
ferromagnetic layer
chamber
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Application number
PCT/JP1999/002149
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English (en)
Japanese (ja)
Inventor
Koujirou Yagami
Kazuhiro Uneyama
Masakiyo Tsunoda
Original Assignee
Takahashi, Migaku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Takahashi, Migaku filed Critical Takahashi, Migaku
Priority to PCT/JP1999/002149 priority Critical patent/WO2000065577A1/fr
Priority to TW088110312A priority patent/TW436773B/zh
Publication of WO2000065577A1 publication Critical patent/WO2000065577A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Definitions

  • the present invention relates to an exchange element, a method of manufacturing the same, a magnetoresistive element, and a magnetic head.
  • the present invention relates to an exchange coupling element, a method for manufacturing the same, a magnetoresistive element, and a magnetic head. More specifically, the present invention relates to an exchange-coupled device that can be made thinner in order to cope with a narrower reproducing head gap and has excellent heat resistance and corrosion resistance, and a method of manufacturing the same. Further, the exchange coupling element and the method of manufacturing the same according to the present invention can be applied to a magnetoresistive element used as a magnetic sensor or the like for reproducing a magnetic signal written on a hard disk, floppy disk, magnetic tape, or the like. It is suitably used for wood. Background art
  • the structure of a magnetoresistive element is an artificial lattice type ( ⁇ ), which is a structure in which a ferromagnetic layer is laminated a plurality of times on a surface of a substrate with a nonmagnetic layer (spacer) interposed therebetween,
  • ⁇ artificial lattice type
  • a spin-valve type of a structure in which a ferromagnetic layer is laminated on a surface of a base with a non-magnetic layer interposed therebetween, and an antiferromagnetic layer is formed on the surface of the lastly provided ferromagnetic layer ( ⁇ ) is widely known.
  • a magnetic recording medium represented by a hard disk is expected to have a further improvement in recording density, and accordingly, a head having the above-described magnetoresistive element is required to have higher performance.
  • a head having the above-described magnetoresistive element is required to have higher performance.
  • the spin valve type which is advantageous for narrowing the reproducing head gap, it is essential to reduce the thickness of the laminated film composed of the adjacent ferromagnetic layer and antiferromagnetic layer.
  • reproducing gap length becomes what extent is estimated Chikaraku which depends on the recording bit Topa data Ichin shape envisaged, 4 0 G bit Z i ⁇ 2 at approximately 0. L ⁇ m before and after the.
  • the exchange magnetic anisotropy induced at the interface of the exchange coupling device consisting of the ferromagnetic layer and the antiferromagnetic layer is based on the function of the spin-valve film. Although it plays a central role, it is an important technical issue to extract it effectively and stably under an extremely thin film.
  • the exchange magnetic anisotropy is evaluated by a one-way anisotropy constant J representing exchange coupling energy per unit area (so-called exchange coupling strength) at the interface between the ferromagnetic layer and the antiferromagnetic layer.
  • J K is the product of Ms, df, and Hex.
  • Ms is the saturation magnetization of the ferromagnetic layer obtained from the magnetization curve obtained by the vibrating sample magnetometer (VSM)
  • Hex is the exchange coupling magnetic field obtained from the shift of the magnetization curve
  • df is the strong magnetic field. This is the thickness of the magnetic layer.
  • FIG. 9 is a graph showing the exchange magnetic anisotropy of a laminated film using various known antiferromagnetic materials.
  • the horizontal axis is the thickness of the antiferromagnetic layer, and the vertical axis is the one-way anisotropy constant J ,.
  • the symbols in Fig. 9 are data published in the following materials.
  • the one-way anisotropy constant J ⁇ calculated from the Hex peak value 40 (0 e) is about 0.056 (erg Zc), which is smaller than other antiferromagnetic materials. Therefore, an increase in J ⁇ was required.
  • the temperature at which the exchange coupling with the ferromagnetic layer disappears that is, the blocking temperature ⁇ 1 1 1 — I r r ° C is the maximum, and it is improved to about 180 ° C by adding Fe, but it is almost the same as the heat generation temperature (150 ° C to 170 ° C) generated by the sense current etc. in the mounted magnetic head. Due to the same level, problems remained in thermal stability.
  • the antiferromagnetic layer has a thickness of 40 nm
  • a single spin-valve magnetoresistive element has a total thickness of 60 nm or more.
  • a recording density of 20 Gbit / in 2 is difficult.
  • the thickness of the antiferromagnetic layer can be reduced to 10 nm
  • the total thickness of the magnetoresistive element can be suppressed to 20 nm or less. Realization of recording density exceeding in 2 can be expected. Therefore, the development of an exchange-coupled device capable of obtaining stable exchange-coupling even when the thickness of the antiferromagnetic film is reduced to 10 nm or less and a method of manufacturing the same have been expected.
  • the present invention have use the Mn- I r alloy composition range having excellent corrosion resistance as the antiferromagnetic layer has a high unidirectional anisotropy constant J kappa and blocking temperature tau beta, and the thickness of 1 It is an object of the present invention to provide an exchange coupling device, a method for manufacturing the same, a magnetoresistive effect device, and a magnetic head that can maintain various characteristics even when the thickness is 0 nm or less and can achieve a thin spin valve film. Disclosure of the invention
  • An exchange coupling device is an exchange coupling device comprising at least a ferromagnetic layer, and an antiferromagnetic layer adjacent to one surface of the ferromagnetic layer and exchange-coupled to the ferromagnetic layer.
  • the antiferromagnetic layer is an Mn-Ir alloy composed of at least 30 at% and at most 54 at% or less of iridium (Ir) and a balance of manganese (Mn).
  • antiferromagnetic layer unidirectional anisotropy constant is induced at the interface of the exchange coupling elements consisting of J kappa is characterized in that at 0. 06 erg / cm 2 or more at room temperature after and deposition.
  • the antiferromagnetic layer made of MnIr has excellent corrosion resistance by setting the amount of Ir to 30 at% or more, and also limits the amount of Ir to 54 at% or less. Even if it has a blocking temperature exceeding C and the thickness of the antiferromagnetic material layer is extremely thin, that is, 10 nm or less, the one-way anisotropy constant J ⁇ is maintained at room temperature at 0.06. erg / cn ⁇ now possible.
  • the method for manufacturing an exchange-coupled device according to the present invention is directed to a method for manufacturing an exchange-coupled device, comprising: a ferromagnetic layer; and an Mn-Ir alloy adjacent to one surface of the ferromagnetic layer and exchange-coupled to the ferromagnetic layer.
  • a method of manufacturing an exchange-coupled device including at least a ferromagnetic layer, wherein a predetermined substrate is disposed in a film forming space, and a back pressure in the film forming space is set to 1 ⁇ 10 -8 Tor or less.
  • the exchange coupling element is provided with at least one ferromagnetic layer via a non-magnetic layer on the surface of the ferromagnetic layer, which is not in contact with the antiferromagnetic layer, thereby improving corrosion resistance and thermal stability.
  • An excellent magnetoresistive element having an extremely thin laminated structure can be obtained.
  • the magnetoresistance effect element can be used as a magnetic head of a magnetic recording / reproducing device, and can also be used as a magnetic sensor or the like.
  • FIG. 1 is a schematic sectional view showing an exchange coupling device according to the present invention.
  • FIG. 2 is a schematic plan view of a sputtering film forming apparatus used for producing a magnetoresistive film according to the present invention, as viewed from above.
  • Figure 3 is a graph showing the relationship between the blanking opening kkkingu temperature of the exchange coupling element manufactured with the back pressure P B at the time of forming the exchange coupling element ⁇ ⁇ (° C).
  • I r amount contained in Mn- I r film of the exchange coupling elements fabricated is a graph showing the relationship between unidirectional anisotropy constant J kappa and deposition rate (L ogscale).
  • FIG. 5 is a graph showing the relationship between the amount of Ir contained in the Mn—Ir film of the manufactured exchange coupling device and the blocking temperature.
  • FIG. 6 is a schematic cross-sectional view showing a spin-valve type magnetoresistive film according to the present invention.
  • FIG. 7 is an MR curve of the manufactured spin-knob type magnetoresistive element.
  • FIG. 8 is a perspective view (a) of a part of the magnetic head according to the present example cut away and an enlarged view (b) of the vicinity of a spin valve type magnetoresistive element.
  • FIG. 9 is a graph showing the exchange magnetic anisotropy of a laminated film using various known antiferromagnetic materials.
  • the exchange-coupled device [Fig. 1 (a)] manufactured in this example is composed of a substrate 101 / underlayer 102 (Ta film, 5 nm thick) / ferromagnetic layer 103 (Ni-Fe film, The layered structure was composed of an antiferromagnetic layer 104 (Mn-Ir film, thickness 10 nm) / a protective layer 105 (Ta film, thickness 5 nm).
  • the substrate 101 a Si (100) single crystal substrate provided with a thermal oxide film on the surface was used.
  • the base 100 provided with the base layer 102 on the substrate 101 was used.
  • FIG. 2 is a schematic plan view of the film forming apparatus as viewed from above.
  • 1 is the first load room and 2 is the first load room.
  • a second load chamber disposed above the load chamber 3 is a pretreatment chamber, 4 is a transfer chamber, 5 is a first film formation chamber, 6 is a second film formation chamber, and 7 is a third and fourth film formation chamber.
  • Reference numeral 8 denotes a fifth film forming chamber
  • reference numerals 10 and 11 denote substrate moving means.
  • 2a, 3a, 4a, 4a ', 5a, 6a, 7a, 7a' and 8a are exhaust means for reducing the pressure in each room.
  • the exhaust means 4 a and 4 a ′ are arranged below the transfer chamber 4 (on the back side of the drawing).
  • 2b, 3b, 5b, 6b, 7b and 8b represent gate valves provided between the chambers.
  • Table 1 shows the film forming conditions for manufacturing the exchange-coupled device according to the present example.
  • Substrate holder temperature control At least the substrate holder is water cooled
  • a substrate 101 made of a Si (100) single crystal substrate provided with a thermal oxide film on its surface is introduced into the first port chamber 1 of the apparatus shown in FIG. was depressurized have use the exhaust means (not shown) 1 of an internal space from atmospheric pressure to 1 0 one 6 ⁇ 1 0- Q to rr stand predetermined pressure.
  • the substrate surface was dry cleaned by plasma generated under predetermined conditions using Ar gas.
  • a Ta film (5 nm) was formed as a base layer 102 on the substrate 101 to obtain a substrate 100 according to this example.
  • the procedure is shown in the following (A5-1) to (A5-4).
  • a predetermined power was applied to the cathode to sputter the Ta target.
  • a shutter covering the substrate surface was opened for a predetermined time to form a 5-nm-thick Ta film 102 on the substrate 101.
  • the thickness of the Ta film was controlled by closing the shirt after a predetermined time.
  • a 6-1) After forming the Ta film 102, open the gate valve 5b, take out the substrate from the film formation chamber 5 by the transfer means built in the transfer chamber 4, close 5b, and then open 6b. And moved to the film forming chamber 6. Then, the gate valve 6b was closed. Even in a state where the substrate was set, the vacuum degree in the deposition 6 was maintaining a desired constant pressure P B.
  • the target was sputtered by applying a predetermined power to the force source (N i ⁇ F e). After performing pre-sputtering for a certain period of time, a shutter covering the substrate surface is opened for a predetermined period of time, so that a 5-nm thick Ni—Fe film is formed on the Ta film 102.
  • the thickness of the Ni—Fe film was controlled by closing the shutter after a predetermined time.
  • the Mn-Ir target was sputtered by applying a predetermined power to the force source. First, after performing pre-sputtering for a certain period of time, open the shirt covering the substrate surface for a predetermined period of time, and place it on the Ni-Fe (ferromagnetic layer) 103 with a thickness of 1101111 411-I. An r film 104 was formed. The thickness of the Mn-Ir film was controlled by closing the shutter after a predetermined time.
  • a Ta film (5 nm) was formed as a protective layer 105 on the Mn—Ir film (antiferromagnetic layer) 104.
  • the deposition procedure at that time was the same as the above (A5) except that the substrate was moved from the deposition chamber 8 to the deposition chamber 5.
  • the exchange-coupled device manufactured in this example is referred to as a sample ⁇ ( ⁇ ⁇ ).
  • FIG. 3 is a graph showing the relationship between the back pressure PD when forming the exchange coupling element and the blocking temperature T D (.C) of the produced exchange coupling element.
  • the blocking temperature T D is the temperature at which the exchange coupling magnetic field Hex with the ferromagnetic layer disappears
  • the exchange coupling magnetic field Hex is the magnetic characteristic (M SM) of the film measured with a vibrating sample magnetometer (V SM). -H loop).
  • (A) is T [pi in the prior art to the corresponding back pressure P B is 1 0 6 and 1 0 7 T orr stand each sample whereas stays below 1 5 0 ° C, the back pressure P n by a 5 X 1 0- ° T orr less exchange-coupled device having a T n exceeding 1 5 0 ° C, even antiferromagnetic layer made of Mn- I r ultrathin of thickness 1 0 nm It turns out that it can be realized.
  • (b) In the case where the back pressure P B than 5 x 1 0- 9 To rr, that the exchange coupling element having a 200 ° C or more T [pi can be produced stably revealed.
  • the reverse layer configuration that is, the laminated structure shown in FIG.
  • the back pressure P B in the film formation chamber is fixed to a 10- U Torr level, and the process gas pressure and applied power are controlled.
  • an exchange-coupled device in which the film formation rate and the Ir content in the Mn—Ir film were changed was produced.
  • Ar gas was used as the process gas, and the process gas pressure during film formation was varied from 0.75 to 4 OmTorr.
  • the applied power was changed in the range of 30 to 200 W. At that time, a 4 inch ⁇ evening gate was used.
  • Table 2 summarizes the manufacturing conditions of the Mn-Ir film and the magnetic characteristics of the manufactured exchange coupling device.
  • M n of exchange coupling elements fabricated - is a graph showing the relationship between I r I r content in the film, unidirectional anisotropy constant J K and the deposition rate (Log scale).
  • (A) is the case where the horizontal axis is the amount of Ir and the vertical axis is Jv
  • (b) is the case where the horizontal axis is the deposition rate and the vertical axis is J ⁇ .
  • J ⁇ used here is a value obtained by the exchange-coupled device at room temperature and after film formation (that is, before post-heating treatment).
  • the J ⁇ of the Mn—Ir film is about 0.05 when the Ir amount is 13%. 6 erg / cm 2 is merely been obtained, Mn- I r J K a film I r quantity having excellent corrosion resistance 30 at% or more is greatly reduced to a value of half or less. In addition, the required thickness of the Mn-Ir film is 40 nm or more.
  • Mn back pressure P B of the manufacturing method namely deposition chamber according to the present invention as a 1 0- U T o i- r Table - when forming a I r film, deposition of the antiferromagnetic layer
  • the Mn-Ir film has high corrosion resistance.
  • J ⁇ is more than double that of the conventional technology. having J K Sunawa Chi 0. 060 erg / cm 2 that exceeds even the maximum value of I r of J K which had been obtained in a small area Mn- I r membrane, the actual thickness of a conventional 1/4 It turned out that we could do it.
  • the deposition rate of the antiferromagnetic layer to 0.01 Z second or more, a stable discharge state can be maintained during the deposition.
  • FIG. 5 is a graph showing the relationship between the amount of Ir contained in the Mn—Ir film of the manufactured exchange coupling device and the blocking temperature. From Fig. 5, it was confirmed that when the Ir content of the Mn-Ir film was set to 54 at% or less, the blocking temperature exceeded 200 ° C. Sufficient thermal stability can be ensured even when used as part of a magnetoresistive effect element incorporated in a capacitor or the like. Therefore, according to the manufacturing method of the present invention, in the exchange-coupled device having the above configuration, By setting the amount of Ir in the antiferromagnetic layer made of the Mn-Ir alloy to 30 at% or more and 54 at% or less, it has excellent corrosion resistance and a booking temperature of 200 ° C or more. Even when the thickness of the antiferromagnetic layer is as thin as 10 nm, the unidirectional anisotropy constant J K can be increased to 0.06 erg / cm 2 or more at room temperature and after film formation. Was.
  • the following various elements may be added to the Mn—Ir antiferromagnetic layer as appropriate, alone or in combination of two or more. These additional calories do not cause the effects of the present invention described above to be lost. However, when performing these additions, it is necessary to keep the composition ratio of Mn and Ir unchanged. However, if certain characteristics are improved by the addition of elements, other characteristics tend to decrease. The upper limit of the amount of addition is about 10 at% regardless of the elements and combinations.
  • one or more noble metals such as Pt, Rh, Pd, and Ru may be included.
  • the back pressure P B in each deposition chamber shown in FIG. 2 was fixed to a 10— U Torr stage, and a spin-valve magnetoresistive element (fixed magnetization layer) having the configuration shown in FIG. (An antiferromagnetic layer is stacked on top of it: this is called a top spin valve).
  • the spin-valve magnetoresistive element manufactured in this example [FIG. 6 Ca 2] has a substrate 60 1 Z underlayer 602 (Ta film, thickness 5 nm) and a first ferromagnetic layer 604 (Ni).
  • Second ferromagnetic layer 605 (Co film, 1 nm thick)
  • Non-magnetic layer 606 (Cu film, 2.5 nm thick)
  • Fixed magnetization Layer 607 (Co film, thickness 2 nm)
  • Antiferromagnetic layer 608 (Mn-Ir film, thickness 5 nm)
  • Protective layer 609 (Ta film, thickness 5 nm) did.
  • a Si (100) single crystal substrate provided with a thermal oxide film on its surface is used.
  • a substrate 600 provided with a base layer 602 on the substrate 600 was used.
  • the first ferromagnetic layer 604 and the second ferromagnetic layer 605 constitute a free magnetic layer 603.
  • Table 3 shows film forming conditions when manufacturing the magnetoresistive element according to the present example.
  • (B 5-1) Open the gate valve 3 b, take out the substrate from the pretreatment chamber 3 by the transfer means built in the transfer chamber 4, close 3 b, open 5 b, and move to the deposition chamber 5 Let me know. Then, the gate valve 5b was closed. Even in a state where the substrate was set, the vacuum degree in the deposition 5 was maintained 1 0- ⁇ 1 0- 12 T orr stand very high vacuum.
  • a predetermined electric power was applied to the cathode to sputter the Ta gate.
  • a shutter covering the substrate surface was opened for a predetermined time to form a 5 nm thick Ta film on the substrate.
  • the thickness of the Ta film was controlled by closing the shutter after a predetermined time.
  • a Co film (l nm) is formed as a second ferromagnetic layer 605 on the Ni-Fe film (first ferromagnetic layer) 604, and a non-magnetic film is formed thereon.
  • a Cu film (2.5 nm) was formed as the body layer 606, and a Co film (2 nm) was formed thereon as the fixed magnetic layer 607. The procedure is shown in the following (B7-1) to (B7-3).
  • (B 8-1) Open the gate valve 7 b, take out the substrate from the film forming chamber 7 by the transfer means built in the transfer chamber 4, close 7 b, open 8 b, and open the film forming chamber 8. Moved to Thereafter, the gate valve 8b was closed. Even in a state where the substrate was set, the vacuum degree in the deposition 8 was maintained 1 0- U ⁇ 1 0- 12 T orr stand very high vacuum.
  • the Mn-Ir target was subjected to sputtering by applying a predetermined power to the cathode.
  • a shutter covering the substrate surface is opened for a predetermined period of time to form a 5 nm thick Mn-Ir film 608 on the Co film (fixed magnetic layer) 607. did.
  • the thickness of the Mn-Ir film was controlled by closing the shutter after a predetermined time.
  • a Ta film (5 nm) was formed as a protective layer 609 on the Mn—Ir film (antiferromagnetic layer) 608.
  • the deposition procedure at that time was the same as the above (B5) except that the substrate was moved from the deposition chamber 8 to the deposition chamber 5.
  • Example 5 in making the magnetoresistive element in the same manner as in Example 3, in place of the respective film forming chamber and the back pressure of the transfer chamber to a manufacturing apparatus to configure the 1 0 U T orr table 1 0- A magnetoresistive element having the same laminated structure as that of Example 3 was manufactured as a 7 Torr unit. The other points were the same as in Example 1.
  • the magnetoresistive element manufactured in this example is referred to as Sample 5.
  • FIG. 7 shows MR curves of the spin-valve magnetoresistive elements manufactured in Example 3 and Comparative Example 1.
  • Figure 7 reveals the following.
  • the manufacturing method according to the present invention is an effective means from the viewpoints of thinning and reducing the thickness of the spin-valve type magnetoresistive element.
  • the manufacturing method according to the present invention is applied to a magnetoresistive effect element having a laminated structure shown in FIG. 6A (when an antiferromagnetic layer is laminated on a fixed magnetic layer: a top spin valve type).
  • a magnetoresistive effect element having a laminated structure shown in FIG. 6A (when an antiferromagnetic layer is laminated on a fixed magnetic layer: a top spin valve type).
  • the above effect can also be obtained with the reverse layer configuration, that is, the laminated structure shown in Fig. 6 (b) (when the fixed magnetic layer is laminated on the antiferromagnetic layer: bottom spin valve type).
  • a layer obtained by laminating a (Ni-Fe) film on a Ta film is preferably used as the underlayer 602.
  • a spin-valve type GMR reproducing head and a recording / reproducing separated type magnetic head combining this with an inductive recording head were produced using the magnetoresistance effect element described in Example 3.
  • FIG. 8 is a perspective view (a) of a part of the magnetic head according to the present example cut away and an enlarged view (b) of the vicinity of a spin valve type magnetoresistive element.
  • reference numeral 800 denotes a magnetoresistance effect element
  • reference numeral 802 denotes an exchange coupling element
  • reference numeral 803 denotes a Antiferromagnetic layer
  • 804 ferromagnetic layer functioning as fixed magnetic layer
  • 805 nonmagnetic layer
  • 806 ferromagnetic layer functioning as free magnetic layer
  • 807 MR Electrodes
  • 808 is a hard film
  • 811 is a reproducing head
  • 812 is an upper shield of the reproducing head which also serves as the lower magnetic pole (824) of the recording head
  • 813, 8 14 is the insulating film
  • 8 15 is the lower shield of the reproducing head
  • 8 21 is the recording head
  • 8 22 is the upper pole of the recording head
  • 8 23 is the coil made of conductive material
  • Reference numeral 8224 denotes a lower magnetic pole of the recording head which also serves as an upper shield (812) of the reproducing head.
  • the magnetic poles constituting the recording head are also commonly called poles.
  • the read / write separated magnetic head according to the present invention is a case in which the upper shield 812 of the readhead 811 also serves as the lower magnetic pole 824 of the writehead 821. .
  • the reproducing head 811 has an alumina film having a sufficient thickness as the insulating films 813 and 814 on and under the magnetoresistance effect element 81 (total thickness of up to 80 nm). ),
  • the gap length (the distance between the upper shield 812 and the lower shield 815) was 0.1 m.
  • the MR ratio at this time was about 10% at room temperature and after film formation. More gap length and characteristics can correspond to reproduction of the recording density of about 4 0 G bit / in 2.
  • the Mn-Ir film having an Ir composition having excellent corrosion resistance and a blocking temperature T B exceeding 200 ° C. is antiferromagnetic.
  • a 0. 06 er gZcn ⁇ or more unidirectional anisotropy constant J R can be achieved even when the thickness thereof and 1 onm less.
  • this exchange coupling element it becomes possible to provide a magnetoresistive element having an extremely thin laminated structure or a magnetic head capable of coping with a narrow gap.
  • an exchange-coupled device having the above characteristics can be formed stably with good reproducibility. Therefore, by using this manufacturing method, it is possible to stably manufacture an MR head capable of coping with a higher recording density.

Abstract

L'invention se rapporte à un dispositif de liaison par interaction d'échange ayant une excellente résistance à la corrosion, un coefficient élevé d'anisotropie unidirectionnelle JK, une température de blocage élevée TB, d'excellentes caractéristiques conservées même si l'épaisseur de la couche antiferromagnétique est inférieure ou égale à 10 nm, et comportant un film mince de type 'spin-bulb'. L'invention se rapporte également à un procédé de fabrication dudit dispositif. Ledit dispositif de liaison par interaction d'échange comportant une couche ferromagnétique qui est liée par interaction d'échange à une couche antiferromagnétique adjacente à l'une de ses faces, se caractérise en ce que la couche antiferromagnétique est fabriquée à partir d'un alliage Mn-Ir contenant 30 à 54 %, en pourcentage atomique, d'iridium (Ir), le reste étant constitué de manganèse (Mn), et en ce que l'anisotropie unidirectionnelle JK induite au niveau de l'interface du dispositif de liaison par interaction d'échange est supérieure ou égale à 0,06 erg/cm2, à température ambiante après la formation du film.
PCT/JP1999/002149 1999-04-22 1999-04-22 Dispositif de liaison par interaction d'echange et procede de fabrication correspondant, dispositif a effet magnetoresistant et tete magnetique WO2000065577A1 (fr)

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PCT/JP1999/002149 WO2000065577A1 (fr) 1999-04-22 1999-04-22 Dispositif de liaison par interaction d'echange et procede de fabrication correspondant, dispositif a effet magnetoresistant et tete magnetique
TW088110312A TW436773B (en) 1999-04-22 1999-06-21 Exchanging combining device and its fabricating method, electromagnetic impedance function device and magnetic head

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PCT/JP1999/002149 WO2000065577A1 (fr) 1999-04-22 1999-04-22 Dispositif de liaison par interaction d'echange et procede de fabrication correspondant, dispositif a effet magnetoresistant et tete magnetique

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
US7418777B2 (en) 2000-03-29 2008-09-02 Tdk Corporation Method on manufacturing spin valve film

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JPH08249616A (ja) * 1995-03-07 1996-09-27 Hitachi Ltd 磁気抵抗効果素子及び磁気ヘッド
JPH1040516A (ja) * 1996-07-25 1998-02-13 Toshiba Corp 磁気抵抗効果ヘッド
JPH10298745A (ja) * 1997-04-24 1998-11-10 Ken Takahashi 真空成膜装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08249616A (ja) * 1995-03-07 1996-09-27 Hitachi Ltd 磁気抵抗効果素子及び磁気ヘッド
JPH1040516A (ja) * 1996-07-25 1998-02-13 Toshiba Corp 磁気抵抗効果ヘッド
JPH10298745A (ja) * 1997-04-24 1998-11-10 Ken Takahashi 真空成膜装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7418777B2 (en) 2000-03-29 2008-09-02 Tdk Corporation Method on manufacturing spin valve film

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