WO2000041212A1 - Gas injection system for plasma processing - Google Patents

Gas injection system for plasma processing Download PDF

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Publication number
WO2000041212A1
WO2000041212A1 PCT/US1999/027917 US9927917W WO0041212A1 WO 2000041212 A1 WO2000041212 A1 WO 2000041212A1 US 9927917 W US9927917 W US 9927917W WO 0041212 A1 WO0041212 A1 WO 0041212A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
substrate
plasma
injector
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1999/027917
Other languages
English (en)
French (fr)
Inventor
Tuqiang Ni
Alex Demos
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to JP2000592857A priority Critical patent/JP4588885B2/ja
Priority to IL14400199A priority patent/IL144001A/xx
Priority to EP99967134A priority patent/EP1145277B1/en
Publication of WO2000041212A1 publication Critical patent/WO2000041212A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Definitions

  • U.S. Patent No. 5,164,040 to Eres et al. discloses pulsed supersonic jets for CVD. While these systems are intended to improve process uniformity, they suffer from the drawbacks noted above, namely clogging of the orifices at the distal ends of the injectors, which can adversely affect film uniformity on the substrate.
  • U.S. Patent No. 4,996,077 to Moslehi et al. discloses an electron cyclotron resonance (ECR) device including gas injectors arranged around the periphery of a substrate to provide uniform distribution of non-plasma gases. The non-plasma gases are injected to reduce particle contamination, and the injectors are oriented to direct the non-plasma gas onto the substrate surface to be processed.
  • ECR electron cyclotron resonance
  • Figure 5 is a graph of chlorine atom distribution from a 300 mm LAM TCPTM plasma reactor fitted with a gas injector providing top gas injection according to the present invention
  • the vacuum processing chamber 10 includes a substrate holder 12 providing an electrostatic clamping force to a substrate 13 as well as an RF bias to a substrate supported thereon and a focus ring 14 for confining plasma in an area above the substrate while it is He backcooled.
  • a source of energy for maintaining a high density (e.g. 10 11 -10 12 ions/cm 3 ) plasma in the chamber such as an antenna 18 powered by a suitable RF source and associated RF impedance matching circuitry 19 inductively couples RF energy into the chamber 10 so as to provide a high density plasma.
  • the chamber includes suitable vacuum pumping apparatus connected to outlet 15 for maintaining the interior of the chamber at a desired pressure (e.g. below 50 mTorr, typically 1- 20 mTorr).
  • Figure 4 is a graph of local SiCl * emission from a 300 mm LAM TCPTM plasma reactor fitted with a gas injector providing top gas injection according to the present invention compared to the same reactor fitted with a gas ring providing side gas injection.
  • the reactor was operated at 10 mTorr reactor pressure, 800 watts power to the RF antenna, 150 watts power to the bottom electrode in the ESC, 100 seem Cl 2 and 100 seem Ar.
  • the intensity of etch by-product distribution above the exposed surface of a 300 mm wafer is substantially more uniform with top gas injection.
  • Figures 8a-d are SEM (scanning electron microscope) images of etch profiles in polysilicon across a 300 mm wafer processed in a 300 mm reactor operated at 10 mTorr reactor pressure and fitted with side gas injection supplying 200 seem total gas flow.
  • Figure 8a shows the etch profile of dense lines at the center of the wafer and
  • Figure 8b shows the etch profile of dense lines at the edge of the wafer.
  • SEM images show that the etch profile is not as uniform across the 300 mm wafer as in the case of top gas injection shown in Figures 7a-d.
  • Figures 8c and 8d show etch profiles of an isolated line at the center and edge of the wafer.
  • the delta CD is 112.5 nm at the center and 62.5 nm at the edge, the difference in delta CD at the center and edge being 50 nm or 0.05 ⁇ m.
  • the gas injector advantageously allows an operator to modify a process gas supply arrangement for a plasma etch reactor to optimize gas distribution in the reactor. For example, in plasma etching aluminum it is desirable to distribute the process gas into the plasma rather than direct the process gas directly towards the substrate being etched. In plasma etching polysilicon it is desirable to distribute the process gas into the plasma and direct the process gas directly towards the substrate being etched. Further optimization may involve selecting a gas injector which extends a desired distance below the inner surface of the window and/or includes a particular gas outlet arrangement.
  • the plasma potential is largely determined by the capacitive coupling between the plasma and the RF-driven substrate electrode. Under typical conditions, the plasma potential can reach hundreds of volts.
  • the gas injector generally remains at a lower potential (e.g., ground potential for a metallic injector) than the plasma.
  • a a thin sheath can form around a "plasma immersed" portion of the gas injector if the gas injector extends into the zone of plasma, in which case electric field lines created by the difference in potential between the plasma and the grounded gas injector would be perpendicular to the sheath.
  • etch uniformity of metal such as aluminum, conductive semiconductor materials such as polysilicon and dielectric materials such as silicon dioxide including photoresist etch uniformity and selectivity to underlying materials using halogen and halocarbon based chemistries are improved.
  • conventional injection through a showerhead incorporated in or below a dielectric window can result in nonuniform etching across the substrate, e.g. , "center fast resist etching", which can lead to poor control of the etched features and profiles, and differences in features at the substrate center and edge.
  • polymer formation on the TCPTM window or the showerhead can lead to undesirable particle flaking and contamination on the substrate.
  • the present preferred injection design thus appears to provide a much more uniform flux of reactive intermediates and chemical radicals to the substrate surface, including both etch species, such as atomic chlorine and fluorine, and polymerizing species, such as CF, CF 2 , and CF 3 .
  • process gas is injected within the plasma region facing and in close proximity to, the center of the substrate.
  • gas outlets of the gas injector can be located far enough below the inner surface of the window such that the gas outlets are immersed within the plasma.
  • the gas outlets are preferably located such that there is adequate diffusion of the ions and neutral species in order to ensure a uniform etch or deposition rate.
  • the gas injector can be located in a region where the azimuthal electric field induced by the TCPTM coil falls to zero, which minimizes perturbations of the plasma generation zone.
  • the gas injector is immersed a suitable distance such as no more than about 80% of the distance between the chamber ceiling and the substrate. This ensures that the ion diffusion from upper regions of the chamber have sufficient space to fill in the lower ion density immediately beneath the gas injector. This will minimize any "shadow" of the gas injector in the ion flux to the substrate.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
PCT/US1999/027917 1998-12-30 1999-12-07 Gas injection system for plasma processing Ceased WO2000041212A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000592857A JP4588885B2 (ja) 1998-12-30 1999-12-07 プラズマ処理システム及びプラズマ処理方法並びにガス注入器
IL14400199A IL144001A (en) 1998-12-30 1999-12-07 Gas injection system for plasma processing
EP99967134A EP1145277B1 (en) 1998-12-30 1999-12-07 Gas injection system for plasma processing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/223,273 1998-12-30
US09/223,273 US6230651B1 (en) 1998-12-30 1998-12-30 Gas injection system for plasma processing

Publications (1)

Publication Number Publication Date
WO2000041212A1 true WO2000041212A1 (en) 2000-07-13

Family

ID=22835796

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/027917 Ceased WO2000041212A1 (en) 1998-12-30 1999-12-07 Gas injection system for plasma processing

Country Status (7)

Country Link
US (3) US6230651B1 (https=)
EP (1) EP1145277B1 (https=)
JP (1) JP4588885B2 (https=)
KR (1) KR100665646B1 (https=)
IL (1) IL144001A (https=)
TW (1) TW548680B (https=)
WO (1) WO2000041212A1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
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WO2001045135A3 (en) * 1999-12-14 2002-03-14 Applied Materials Inc Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates
WO2004088729A1 (en) * 2003-03-26 2004-10-14 Tokyo Electron Limited Chemical processing system and method
JP2005507159A (ja) * 2001-10-15 2005-03-10 ラム　リサーチ　コーポレーション 調整可能なマルチゾーンガス噴射システム
DE10200279B4 (de) * 2001-01-11 2006-08-17 Samsung Electronics Co., Ltd., Suwon Gasinjektor-Anordnung mit Gasinjektoren aus einem Keramikmaterialblock mit Gasinjektorlöchern, die sich durch diesen erstrecken, und ein die Gasinjektor-Anordnung enthaltenes Ätzgerät
US8025731B2 (en) 1998-12-30 2011-09-27 Lam Research Corporation Gas injection system for plasma processing
US20240420925A1 (en) * 2022-06-22 2024-12-19 Nyseplasma Corp. Plasma chamber having swirl motion side gas feed

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