TW548680B - Gas injection system and method for plasma processing - Google Patents

Gas injection system and method for plasma processing Download PDF

Info

Publication number
TW548680B
TW548680B TW088123167A TW88123167A TW548680B TW 548680 B TW548680 B TW 548680B TW 088123167 A TW088123167 A TW 088123167A TW 88123167 A TW88123167 A TW 88123167A TW 548680 B TW548680 B TW 548680B
Authority
TW
Taiwan
Prior art keywords
gas
substrate
patent application
scope
item
Prior art date
Application number
TW088123167A
Other languages
English (en)
Chinese (zh)
Inventor
Tuqiang Ni
Alex Demos
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of TW548680B publication Critical patent/TW548680B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
TW088123167A 1998-12-30 2000-01-28 Gas injection system and method for plasma processing TW548680B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/223,273 US6230651B1 (en) 1998-12-30 1998-12-30 Gas injection system for plasma processing

Publications (1)

Publication Number Publication Date
TW548680B true TW548680B (en) 2003-08-21

Family

ID=22835796

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088123167A TW548680B (en) 1998-12-30 2000-01-28 Gas injection system and method for plasma processing

Country Status (7)

Country Link
US (3) US6230651B1 (https=)
EP (1) EP1145277B1 (https=)
JP (1) JP4588885B2 (https=)
KR (1) KR100665646B1 (https=)
IL (1) IL144001A (https=)
TW (1) TW548680B (https=)
WO (1) WO2000041212A1 (https=)

Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
US6432259B1 (en) * 1999-12-14 2002-08-13 Applied Materials, Inc. Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates
US6451161B1 (en) * 2000-04-10 2002-09-17 Nano-Architect Research Corporation Method and apparatus for generating high-density uniform plasma
US6797639B2 (en) * 2000-11-01 2004-09-28 Applied Materials Inc. Dielectric etch chamber with expanded process window
US6403491B1 (en) * 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window
KR100413145B1 (ko) * 2001-01-11 2003-12-31 삼성전자주식회사 가스 인젝터 및 이를 갖는 식각 장치
US6852167B2 (en) * 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US6758909B2 (en) * 2001-06-05 2004-07-06 Honeywell International Inc. Gas port sealing for CVD/CVI furnace hearth plates
US6548416B2 (en) * 2001-07-24 2003-04-15 Axcelis Technolgoies, Inc. Plasma ashing process
WO2003023835A1 (en) * 2001-08-06 2003-03-20 Genitech Co., Ltd. Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof
US20030070620A1 (en) * 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
JP4338355B2 (ja) * 2002-05-10 2009-10-07 東京エレクトロン株式会社 プラズマ処理装置
KR101075046B1 (ko) * 2002-05-23 2011-10-19 램 리써치 코포레이션 반도체 공정용 플라즈마 반응기를 위한 다중부재 전극 및다중부재 전극의 일부를 교체하는 방법
GB2406583B (en) * 2002-08-08 2005-12-21 Trikon Technologies Ltd Improvements to showerheads
US7270713B2 (en) * 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
WO2004088729A1 (en) * 2003-03-26 2004-10-14 Tokyo Electron Limited Chemical processing system and method
US6942753B2 (en) * 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US6921437B1 (en) * 2003-05-30 2005-07-26 Aviza Technology, Inc. Gas distribution system
US7083903B2 (en) * 2003-06-17 2006-08-01 Lam Research Corporation Methods of etching photoresist on substrates
JP2005072446A (ja) * 2003-08-27 2005-03-17 Chi Mei Electronics Corp プラズマ処理装置及び基板の表面処理装置
KR100859265B1 (ko) * 2003-12-30 2008-09-18 동부일렉트로닉스 주식회사 반도체 제조 설비의 공정 가스 유입관 구조
KR101025323B1 (ko) * 2004-01-13 2011-03-29 가부시키가이샤 아루박 에칭 장치 및 에칭 방법
US20070066038A1 (en) 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US20060021703A1 (en) * 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US7081421B2 (en) 2004-08-26 2006-07-25 Micron Technology, Inc. Lanthanide oxide dielectric layer
US7494939B2 (en) 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
US20060051965A1 (en) * 2004-09-07 2006-03-09 Lam Research Corporation Methods of etching photoresist on substrates
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
KR20060076346A (ko) * 2004-12-29 2006-07-04 주식회사 하이닉스반도체 반도체 제조용 고밀도 플라즈마 화학기상증착 장치
WO2006106764A1 (ja) * 2005-03-30 2006-10-12 Matsushita Electric Industrial Co., Ltd. 伝送線路
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
KR100522166B1 (ko) * 2005-05-26 2005-10-18 한국기계연구원 플라즈마 반응장치
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US20070032081A1 (en) 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
JP4628900B2 (ja) * 2005-08-24 2011-02-09 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7703479B2 (en) * 2005-10-17 2010-04-27 The University Of Kentucky Research Foundation Plasma actuator
US20090087967A1 (en) * 2005-11-14 2009-04-02 Todd Michael A Precursors and processes for low temperature selective epitaxial growth
KR100707983B1 (ko) * 2005-11-28 2007-04-16 주식회사 에이이티 산화막의 원자층 에칭방법
US7554053B2 (en) * 2005-12-23 2009-06-30 Lam Research Corporation Corrugated plasma trap arrangement for creating a highly efficient downstream microwave plasma system
US7562638B2 (en) * 2005-12-23 2009-07-21 Lam Research Corporation Methods and arrangement for implementing highly efficient plasma traps
US7679024B2 (en) * 2005-12-23 2010-03-16 Lam Research Corporation Highly efficient gas distribution arrangement for plasma tube of a plasma processing chamber
US8088248B2 (en) * 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
US7685965B1 (en) * 2006-01-26 2010-03-30 Lam Research Corporation Apparatus for shielding process chamber port
JP4833778B2 (ja) * 2006-02-13 2011-12-07 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP4674177B2 (ja) * 2006-03-15 2011-04-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20070249173A1 (en) * 2006-04-21 2007-10-25 Applied Materials, Inc. Plasma etch process using etch uniformity control by using compositionally independent gas feed
US8187415B2 (en) * 2006-04-21 2012-05-29 Applied Materials, Inc. Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone
US8231799B2 (en) * 2006-04-28 2012-07-31 Applied Materials, Inc. Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
US7431859B2 (en) * 2006-04-28 2008-10-07 Applied Materials, Inc. Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation
US7540971B2 (en) * 2006-04-28 2009-06-02 Applied Materials, Inc. Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content
US7541292B2 (en) * 2006-04-28 2009-06-02 Applied Materials, Inc. Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones
US20070254483A1 (en) * 2006-04-28 2007-11-01 Applied Materials, Inc. Plasma etch process using polymerizing etch gases and an inert diluent gas in independent gas injection zones to improve etch profile or etch rate uniformity
JP5337482B2 (ja) * 2006-05-09 2013-11-06 株式会社アルバック 薄膜製造装置
US7605063B2 (en) * 2006-05-10 2009-10-20 Lam Research Corporation Photoresist stripping chamber and methods of etching photoresist on substrates
KR100748872B1 (ko) * 2006-06-09 2007-08-13 에이피티씨 주식회사 가스 공급 인젝터를 포함하는 플라즈마 공정 장비
US7928366B2 (en) * 2006-10-06 2011-04-19 Lam Research Corporation Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
WO2008005517A1 (en) * 2006-07-07 2008-01-10 Accretech Usa, Inc. Processing chamber having labyrinth seal
US7972471B2 (en) * 2007-06-29 2011-07-05 Lam Research Corporation Inductively coupled dual zone processing chamber with single planar antenna
KR20090018290A (ko) * 2007-08-17 2009-02-20 에이에스엠지니텍코리아 주식회사 증착 장치
US20090221149A1 (en) * 2008-02-28 2009-09-03 Hammond Iv Edward P Multiple port gas injection system utilized in a semiconductor processing system
JP5223377B2 (ja) 2008-02-29 2013-06-26 東京エレクトロン株式会社 プラズマ処理装置用の電極、プラズマ処理装置及びプラズマ処理方法
JP5230225B2 (ja) * 2008-03-06 2013-07-10 東京エレクトロン株式会社 蓋部品、処理ガス拡散供給装置、及び基板処理装置
WO2010062345A2 (en) * 2008-10-31 2010-06-03 Lam Research Corporation Lower electrode assembly of plasma processing chamber
KR200475462Y1 (ko) * 2009-03-27 2014-12-03 램 리써치 코포레이션 플라즈마 처리 장치의 교체 가능한 상부 챔버 섹션
US8415884B2 (en) * 2009-09-08 2013-04-09 Tokyo Electron Limited Stable surface wave plasma source
US9076634B2 (en) * 2009-09-10 2015-07-07 Lam Research Corporation Replaceable upper chamber parts of plasma processing apparatus
WO2011065965A2 (en) * 2009-11-30 2011-06-03 Lam Research Corporation An electrostatic chuck with an angled sidewall
DE202010015933U1 (de) * 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
US20110278260A1 (en) * 2010-05-14 2011-11-17 Applied Materials, Inc. Inductive plasma source with metallic shower head using b-field concentrator
US8826855B2 (en) 2010-06-30 2014-09-09 Lam Research Corporation C-shaped confinement ring for a plasma processing chamber
US9171702B2 (en) 2010-06-30 2015-10-27 Lam Research Corporation Consumable isolation ring for movable substrate support assembly of a plasma processing chamber
US8485128B2 (en) 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
US8288174B1 (en) 2011-03-24 2012-10-16 Tokyo Electron Limited Electrostatic post exposure bake apparatus and method
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US8562785B2 (en) 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US9947512B2 (en) * 2011-10-25 2018-04-17 Lam Research Corporation Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber
US9679751B2 (en) 2012-03-15 2017-06-13 Lam Research Corporation Chamber filler kit for plasma etch chamber useful for fast gas switching
US10174422B2 (en) * 2012-10-25 2019-01-08 Applied Materials, Inc. Apparatus for selective gas injection and extraction
US9790596B1 (en) * 2013-01-30 2017-10-17 Kyocera Corporation Gas nozzle and plasma device employing same
US9314854B2 (en) 2013-01-30 2016-04-19 Lam Research Corporation Ductile mode drilling methods for brittle components of plasma processing apparatuses
US8893702B2 (en) 2013-02-20 2014-11-25 Lam Research Corporation Ductile mode machining methods for hard and brittle components of plasma processing apparatuses
US9536710B2 (en) 2013-02-25 2017-01-03 Applied Materials, Inc. Tunable gas delivery assembly with internal diffuser and angular injection
CN106304597B (zh) * 2013-03-12 2019-05-10 应用材料公司 具有方位角与径向分布控制的多区域气体注入组件
CN104782234B (zh) * 2013-03-15 2017-07-14 应用材料公司 具有高度对称四重式气体注入的等离子体反应器
US9449797B2 (en) 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
US9275869B2 (en) * 2013-08-02 2016-03-01 Lam Research Corporation Fast-gas switching for etching
US9123661B2 (en) 2013-08-07 2015-09-01 Lam Research Corporation Silicon containing confinement ring for plasma processing apparatus and method of forming thereof
US10553398B2 (en) * 2013-09-06 2020-02-04 Applied Materials, Inc. Power deposition control in inductively coupled plasma (ICP) reactors
US10249511B2 (en) * 2014-06-27 2019-04-02 Lam Research Corporation Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus
JP6499835B2 (ja) * 2014-07-24 2019-04-10 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US10465288B2 (en) * 2014-08-15 2019-11-05 Applied Materials, Inc. Nozzle for uniform plasma processing
US9966270B2 (en) * 2015-03-31 2018-05-08 Lam Research Corporation Gas reaction trajectory control through tunable plasma dissociation for wafer by-product distribution and etch feature profile uniformity
KR101633721B1 (ko) * 2015-11-27 2016-06-27 (주)이엠아이티 수직 다중 기둥 구조를 갖는 rf 안테나
US9716005B1 (en) 2016-03-18 2017-07-25 Applied Materials, Inc. Plasma poisoning to enable selective deposition
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US20190032211A1 (en) * 2017-07-28 2019-01-31 Lam Research Corporation Monolithic ceramic gas distribution plate
US11670490B2 (en) * 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
US10840066B2 (en) 2018-06-13 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable fastening device for plasma gas injectors
CN110223904A (zh) * 2019-07-19 2019-09-10 江苏鲁汶仪器有限公司 一种具有法拉第屏蔽装置的等离子体处理系统
CN111081525B (zh) * 2019-12-31 2021-06-08 江苏鲁汶仪器有限公司 一种阻挡工艺腔室等离子体反流保护进气结构的装置
KR102781656B1 (ko) * 2020-04-06 2025-03-13 램 리써치 코포레이션 가스 주입기들을 위한 세라믹 애디티브 제작 (additive manufacturing) 기법들
CN113707527B (zh) * 2020-05-21 2022-07-29 江苏鲁汶仪器有限公司 一种阻挡等离子体反流的分离式进气结构
TWI767244B (zh) * 2020-05-29 2022-06-11 朗曦科技股份有限公司 半導體製程腔體之氣體噴頭
KR20220021206A (ko) * 2020-08-13 2022-02-22 삼성전자주식회사 플라즈마 처리 장치
KR20230093045A (ko) * 2020-10-30 2023-06-26 램 리써치 코포레이션 플라즈마 프로세싱 챔버에서 사용하기 위한 마그네슘 알루미늄 옥시나이트라이드 컴포넌트
JP7543176B2 (ja) * 2021-03-08 2024-09-02 株式会社アルバック プラズマ処理装置およびそのメンテナンス方法
JP7791677B2 (ja) * 2021-09-16 2025-12-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR102887338B1 (ko) * 2022-06-22 2025-11-14 나이스 스타 코퍼레이션 스월 모션 사이드 가스 피드가 구비된 플라즈마 챔버
US12609276B2 (en) 2023-12-21 2026-04-21 Fei Company Mixed-gas species plasma source system
US20260068578A1 (en) * 2024-08-30 2026-03-05 Applied Materials, Inc. Spatial gas injection for gas depletion and gas concentration adjustability, and related processing chambers, apparatus, and methods

Family Cites Families (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51144183A (en) * 1975-06-06 1976-12-10 Hitachi Ltd Semiconductor element containing surface protection film
DE2608417C3 (de) * 1976-03-01 1981-02-12 Degussa Ag, 6000 Frankfurt Verfahren und vorrichtung zur herstellung von russ
US4270999A (en) 1979-09-28 1981-06-02 International Business Machines Corporation Method and apparatus for gas feed control in a dry etching process
JPS59150417A (ja) 1983-02-08 1984-08-28 Toshiba Corp 気相成長方法およびその装置
US4691662A (en) 1983-02-28 1987-09-08 Michigan State University Dual plasma microwave apparatus and method for treating a surface
JPS6077429A (ja) * 1983-10-04 1985-05-02 Asahi Glass Co Ltd ドライエツチング方法
JPS61100935A (ja) 1984-10-23 1986-05-19 Fujitsu Ltd ドライエツチング装置
US4614639A (en) 1985-04-26 1986-09-30 Tegal Corporation Compound flow plasma reactor
US4612077A (en) 1985-07-29 1986-09-16 The Perkin-Elmer Corporation Electrode for plasma etching system
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
EP0308946B1 (en) 1987-09-22 1993-11-24 Nec Corporation Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness
US4980204A (en) * 1987-11-27 1990-12-25 Fujitsu Limited Metal organic chemical vapor deposition method with controlled gas flow rate
US4996077A (en) 1988-10-07 1991-02-26 Texas Instruments Incorporated Distributed ECR remote plasma processing and apparatus
US4943345A (en) 1989-03-23 1990-07-24 Board Of Trustees Operating Michigan State University Plasma reactor apparatus and method for treating a substrate
US5104634A (en) * 1989-04-20 1992-04-14 Hercules Incorporated Process for forming diamond coating using a silent discharge plasma jet process
US5134965A (en) 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US5164040A (en) 1989-08-21 1992-11-17 Martin Marietta Energy Systems, Inc. Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets
JPH04355917A (ja) * 1990-10-12 1992-12-09 Seiko Epson Corp 半導体装置の製造装置
US5252132A (en) * 1990-11-22 1993-10-12 Mitsubishi Denki Kabushiki Kaisha Apparatus for producing semiconductor film
JP2839720B2 (ja) 1990-12-19 1998-12-16 株式会社東芝 熱処理装置
US5531834A (en) 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
US5614055A (en) 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
TW293983B (https=) 1993-12-17 1996-12-21 Tokyo Electron Co Ltd
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
US5589002A (en) * 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
US5522934A (en) 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
US5425810A (en) * 1994-05-11 1995-06-20 Internation Business Machines Corporation Removable gas injectors for use in chemical vapor deposition of aluminium oxide
US5426810A (en) * 1994-05-23 1995-06-27 Americo Abrasive pad holder
GB9410567D0 (en) * 1994-05-26 1994-07-13 Philips Electronics Uk Ltd Plasma treatment and apparatus in electronic device manufacture
US5540800A (en) 1994-06-23 1996-07-30 Applied Materials, Inc. Inductively coupled high density plasma reactor for plasma assisted materials processing
US5580385A (en) 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
US5746875A (en) 1994-09-16 1998-05-05 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5643394A (en) 1994-09-16 1997-07-01 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
JP3699142B2 (ja) * 1994-09-30 2005-09-28 アネルバ株式会社 薄膜形成装置
TW285746B (https=) * 1994-10-26 1996-09-11 Matsushita Electric Industrial Co Ltd
DE4440323A1 (de) * 1994-11-11 1996-05-15 Sulzer Metco Ag Düse für einen Brennerkopf eines Plasmaspritzgeräts
JPH08158072A (ja) 1994-12-02 1996-06-18 Nippon Soken Inc ドライエッチング装置
US5685942A (en) 1994-12-05 1997-11-11 Tokyo Electron Limited Plasma processing apparatus and method
JPH0945624A (ja) * 1995-07-27 1997-02-14 Tokyo Electron Ltd 枚葉式の熱処理装置
JP3150056B2 (ja) * 1995-10-19 2001-03-26 東京エレクトロン株式会社 プラズマ処理装置
US5792269A (en) * 1995-10-31 1998-08-11 Applied Materials, Inc. Gas distribution for CVD systems
US5772771A (en) * 1995-12-13 1998-06-30 Applied Materials, Inc. Deposition chamber for improved deposition thickness uniformity
US6070551A (en) 1996-05-13 2000-06-06 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
US6013155A (en) 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US5885358A (en) * 1996-07-09 1999-03-23 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US6170428B1 (en) 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US6090210A (en) * 1996-07-24 2000-07-18 Applied Materials, Inc. Multi-zone gas flow control in a process chamber
JP3220394B2 (ja) * 1996-09-27 2001-10-22 東京エレクトロン株式会社 プラズマ処理装置
TW415970B (en) * 1997-01-08 2000-12-21 Ebara Corp Vapor-phase film growth apparatus and gas ejection head
US6077357A (en) * 1997-05-29 2000-06-20 Applied Materials, Inc. Orientless wafer processing on an electrostatic chuck
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
TW416100B (en) 1997-07-02 2000-12-21 Applied Materials Inc Control of oxygen to silane ratio in a seasoning process to improve particle performance in an HDP-CVD system
US6007330A (en) * 1998-03-12 1999-12-28 Cosmos Factory, Inc. Liquid precursor delivery system
US6194038B1 (en) 1998-03-20 2001-02-27 Applied Materials, Inc. Method for deposition of a conformal layer on a substrate
US6294466B1 (en) 1998-05-01 2001-09-25 Applied Materials, Inc. HDP-CVD apparatus and process for depositing titanium films for semiconductor devices
US6143078A (en) * 1998-11-13 2000-11-07 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
US6263829B1 (en) * 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
US6052176A (en) * 1999-03-31 2000-04-18 Lam Research Corporation Processing chamber with optical window cleaned using process gas
US6257168B1 (en) * 1999-06-30 2001-07-10 Lam Research Corporation Elevated stationary uniformity ring design
US6287643B1 (en) * 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
US20030155079A1 (en) 1999-11-15 2003-08-21 Andrew D. Bailey Plasma processing system with dynamic gas distribution control
US6486069B1 (en) * 1999-12-03 2002-11-26 Tegal Corporation Cobalt silicide etch process and apparatus
US6450117B1 (en) * 2000-08-07 2002-09-17 Applied Materials, Inc. Directing a flow of gas in a substrate processing chamber
US6403491B1 (en) * 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window

Also Published As

Publication number Publication date
US20100327085A1 (en) 2010-12-30
IL144001A (en) 2005-12-18
WO2000041212A1 (en) 2000-07-13
US20010010257A1 (en) 2001-08-02
IL144001A0 (en) 2002-04-21
KR20010101359A (ko) 2001-11-14
US8025731B2 (en) 2011-09-27
US7785417B2 (en) 2010-08-31
EP1145277B1 (en) 2012-02-08
US6230651B1 (en) 2001-05-15
JP4588885B2 (ja) 2010-12-01
EP1145277A1 (en) 2001-10-17
KR100665646B1 (ko) 2007-01-09
JP2002534797A (ja) 2002-10-15

Similar Documents

Publication Publication Date Title
TW548680B (en) Gas injection system and method for plasma processing
JP5364054B2 (ja) 調整可能なマルチゾーンガス噴射システム
US6013155A (en) Gas injection system for plasma processing
US6042687A (en) Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
EP0958401B1 (en) Apparatus and method for high density plasma chemical vapor deposition or etching
JP2002534797A5 (https=)
CN105225912A (zh) 半导体衬底处理装置中包含中央气体喷射器的陶瓷喷头
CN101308775A (zh) 通过室部件引入处理流体的方法和系统
CN107810542A (zh) 具有成形工件夹具的环形等离子体处理装置
KR100493684B1 (ko) 고밀도플라즈마화학기상증착장치및그방법

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent