WO1998039799A1 - Procede de post-traitement pour gravure au plasma - Google Patents

Procede de post-traitement pour gravure au plasma Download PDF

Info

Publication number
WO1998039799A1
WO1998039799A1 PCT/JP1997/000897 JP9700897W WO9839799A1 WO 1998039799 A1 WO1998039799 A1 WO 1998039799A1 JP 9700897 W JP9700897 W JP 9700897W WO 9839799 A1 WO9839799 A1 WO 9839799A1
Authority
WO
WIPO (PCT)
Prior art keywords
post
gas
plasma
plasma etching
treatment
Prior art date
Application number
PCT/JP1997/000897
Other languages
English (en)
Japanese (ja)
Inventor
Kazue Takahashi
Ryoji Fukuyama
Tadamitsu Kanekiyo
Tsuyoshi Yoshida
Original Assignee
Hitachi, Ltd.
Hitachi Techno Engineering Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd., Hitachi Techno Engineering Co., Ltd. filed Critical Hitachi, Ltd.
Publication of WO1998039799A1 publication Critical patent/WO1998039799A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers

Definitions

  • the present invention relates to a plasma etching processing method for performing fine processing on a substrate in a semiconductor device manufacturing process.
  • the present invention particularly relates to a post-treatment method to be performed after etching a metal laminated wiring made of aluminum or an aluminum alloy, wherein the chlorine component in the gas used in the plasma etching is etched.
  • the present invention relates to a post-treatment method of plasma etching for preventing corrosion of metal wiring caused by remaining on a surface.
  • Conventional post-processing methods of plasma etching processing include a step of removing a resist used as a mask for etching (referred to as “ashing processing”) and an adhesion film (sidewall protection film) formed on the side wall of the metal wiring during the etching. ) And an etching process to further remove the sidewall protective film.
  • the post-processing method of the present invention is a post-processing method in a narrow sense, and belongs to the former (assing process). Unless otherwise specified, the post-processing method is an asshing process.
  • the metal wiring of semiconductor devices made of aluminum alloys includes a barrier layer such as Tin on the substrate side, and a similar TiN layer on the front side.
  • a barrier layer such as Tin on the substrate side
  • a similar TiN layer on the front side.
  • Metal wire This is etched with a mixed gas plasma usually contain additive gas to the mixed gas plasma or further of C 1 2 and BC 1 3. Since A 1 is also etched by only C l 2 gas, in order to E T suchingu a metal wiring in a vertical shape, the lateral etch suppressing protective film, rock It is necessary to form a loose sidewall protection film.
  • the sidewall protective film is composed of an etching reaction product and a resist component, and is formed on the sidewall of the metal wiring while proceeding simultaneously with the etching.
  • the sidewall protective film is unnecessary after the etching is completed, and it is necessary to remove the resist and remove the sidewall protective film.
  • the resist removal operation is performed immediately after etching without exposing the semiconductor substrate to the atmosphere. After this assing process, the process starts to remove the sidewall protective film. Since this process is a wet process using water or a chemical solution, the semiconductor substrate is once taken out to the atmosphere and then performed. In some cases, the sidewall protection film is removed immediately after being taken out to the atmosphere, or in other cases, several hours to several days later.
  • the chlorine component having entered during the etching is in the sidewall protective film (C 1 2, C 1) are included. Since this chlorine component is not completely removed in the asshing process, when the semiconductor substrate is subsequently taken out to the atmosphere, it reacts with moisture in the atmosphere to form hydrochloric acid and corrode metal wiring. Therefore, in the polishing treatment, the resist must be removed and the residual chlorine component in the sidewall protective film must be removed. Another idea is that even if the residual chlorine component is present in the sidewall protective film, it does not have to react with moisture in the atmosphere until the sidewall protective film is removed. Another method is to cover the surface with a corrosion-resistant protective film (passivation treatment). In this case, in order to isolate the residual chlorine component of moisture and the side wall protective film in the atmosphere to form a film, such as A 1 2 0 3 on the surface of the sidewall protective film.
  • a 1 F 3 is formed as a corrosion-resistant protective film. It is thought that it was.
  • a 1 F 3 is a water-soluble but stable compound, and is considered to have been able to prevent the reaction between atmospheric moisture and residual chlorine components.
  • the following method is known for the former method, that is, the treatment method for removing the residual chlorine component in the sidewall protective film. ing.
  • Hei 2-7-172525, various mixed gas and H 2 OH, ⁇ , etc. are produced in order to improve the resist ashing speed.
  • the mixing ratio is specified. Examples include 0 2 , 02 + H 2 0, 0 2 + N 2 , 0 2 + H 20 + N 2 s 02 + H 2 0 + CF 4 , ⁇ 2 + H 2 , ⁇ 2, which is a + H 2 + N physician.
  • the oxide film S I_ ⁇ second base gas system (CF 4) in the aluminum wiring including the F is likely to be etched, it can be prevented by the mixing ratio of H 2 ⁇ more than 1 0% It is described.
  • the above-mentioned polishing treatment is mainly described as a method for improving the resist removal rate (assisting rate), but does not describe the removability of the residual chlorine component in the sidewall protective film.
  • a method of removing the resist and removing the side wall protective film using a mixed gas of halogen gas and a gas containing at least hydrogen is disclosed. It is shown. Examples of halogen gas, SF 6, NF 3, CF 4, BF 3, PF 3, PF have X e F 2, F 2 are mentioned.
  • This example aims at removing the resist by a damage-free dry process and removing the sidewall protective film.
  • the document states that the sidewall protective film can be removed by hydrofluoric acid treatment, but the underlying oxide film is also etched at the same time, so it is necessary to remove the sidewall protective film by a dry process.
  • Example described in U.S. Patent US 5, 3 8 2, 3 1 6 in order to simultaneously remove the registry and the side wall protective film by plasma treatment after Edzuchingu consists gas and ⁇ 2 or H 2 ⁇ containing F gases Is used.
  • the fluorine mixture ratio is set to 0.1 to 10%, but the material to be etched is polysilicon or polysilicon, and is used for etching of aluminum wiring and the like which is the target of the present invention. It's not something that I did.
  • the sidewall protective film formed in the etching of A 1 is not removed even when a plasma treatment is performed by introducing a fluorine-based gas.
  • gas containing F CF 4, NF 3, SF 6
  • the water-soluble and fluoride sidewall protective film to remove the C 1 Ri by to plasma treatment in a mixed gas of H 2
  • Examples are shown of washing with water and removing the etching mask (resist).
  • the main purpose of this embodiment is to easily remove the side wall protective film by washing with water, and CF 4 is the main gas.
  • the removal of the resist is to be performed in the last step, and the post-etching post-treatment includes three steps: a plasma treatment, a water washing, and an assing treatment.
  • the side wall protective film of the aluminum wiring is composed of A1, C, Cl, Si, 0, etc., and A1 is not removed by fluorine radicals. Rather, A 1 F 3 is formed, and A 1 2 0 3 yo Ri stable film. Therefore, it is difficult to remove the sidewall protective film with a mixed gas system of fluorine and hydrogen in aluminum wiring.
  • the side wall protective film is fluorinated with fluorine plasma, the side wall protective film is removed by rinsing with water.
  • the need for a resist removal step is required. It is difficult to remove residual chlorine components to a level that does not cause corrosion even if left for a long time. Also, if F remains and reacts with atmospheric moisture to produce hydrogen fluoride HF, corrosion by HF may occur.
  • the H 2 0 removal rate of registry can be ensured to some extent was the main gas. Then, removal of the residual chlorine components in the sidewall protective film, H generated when generating the H 2 0 plasma, 0:. To form a 3 ⁇ 4 11 (1, is removed by vaporization Further, after Atsushingu one of the reasons for removal of the sidewall protective film becomes difficult, since the sidewall protection film composed mainly of a 1 is a 1 2 0 3 is oxidized into Atsushingu, dissolved in the chemical liquid Al force Li Ya acid The side wall protective film is treated with F to make it A 1 F 3, and is easily dissolved in H 20 to make the side wall protective film easy to peel off.
  • FIG. 1 is a diagram showing an example of a plasma etching apparatus for carrying out the present invention.
  • FIG. 2 is a diagram showing the structure of the aluminum laminated film.
  • FIG. 3 is a diagram showing an aluminum wiring shape after etching.
  • FIG. 4 is a schematic diagram of the sidewall protective film.
  • FIG. 5 is a diagram showing measurement results of residual chlorine and residual fluorine.
  • the phenomenon that aluminum wiring corrodes when left in air after plasma etching of aluminum wiring depends on the material structure of aluminum wiring.
  • a laminated film (the substrate side and the like titanium nitride, the substrate S i / oxide film S i 0 2 / ⁇ Chiyun T i N / Aruminiumu Alloy A 1 - S i - C u / nitrogen Kachiyun T i N / register PR).
  • This is due to the fact that corrosion is likely to occur electrochemically. That is, a battery effect works between the stacked films made of different metals.
  • Single-layer film of an aluminum wiring (substrate S i / oxide film S i 0 2 / Aluminum Alloy A l- S i- Cu / registration be sampled PR) is hard to corrode no battery effect.
  • the above substrate is referred to as an aluminum laminated substrate or an aluminum single layer substrate.
  • FIG. 1 shows a plasma etching apparatus embodying the present invention.
  • the aluminum laminated semiconductor substrate 10 is taken out of the cassette 2 on the cassette table 1 by the robot arm 3 installed on the atmosphere side and introduced into the load lock chamber 5.
  • the door 4 of the load lock chamber 5 is closed, and evacuation is started.
  • the vacuum evacuation is carried out slowly so as not to wind up the foreign matter in the load lock chamber 5.
  • the valve 6 between the load lock chamber 5 and the transfer chamber 9 is opened when the air is exhausted to a predetermined pressure or less.
  • the transfer chamber 9 is constantly evacuated and maintained at a high vacuum.
  • the semiconductor substrate 10 is transferred from the load lock chamber 5 to the transfer chamber 9 by the robot arm 11 provided in the transfer chamber 9. Immediately after the transfer, the valve 6 is closed.
  • the pressure in the etching chamber 1 3 is evacuated to sufficiently high vacuum, preferably sure that the 1 0- 5 T orr table below, between the etching chamber 1 3 and the transfer chamber 9
  • the valve 14 is opened, and the semiconductor substrate 10 is carried into the etching chamber 13.
  • the semiconductor substrate 10 is mounted on a substrate mounting electrode (not shown).
  • the electrodes are capable of electrostatically adsorbing the semiconductor substrate 10, and a heat gas of about several Torr to 10 Torr is introduced into the back surface of the semiconductor substrate 10 to increase the heat transfer efficiency between the electrode and the substrate.
  • the gas inlet C l 2 (not shown) as a gas for etching and BC 1 3, the additive gas is introduced in addition to their in some cases.
  • the electrode of this embodiment is of a monopole type that applies a high voltage to the electrostatic attraction film via the plasma
  • the plasma is ignited by microwaves after the introduction of the etching gas.
  • a high voltage for electrostatic attraction is applied to the electrodes, and the semiconductor substrate is attracted to the electrodes.
  • This semiconductor substrate is previously controlled at a temperature of about 20 to 50 ° C.
  • lithium gas is introduced into the back surface of the semiconductor substrate.
  • the substrate temperature can be controlled by the electrode surface temperature.
  • a high-frequency voltage of several 100 kHz to several 10 MHz, preferably 800 kHz to 2 MHz is applied to the electrode, and a bias voltage is applied to the substrate.
  • the etching gas ions which have been turned into a plasma state by the microwave, are drawn vertically into the semiconductor substrate simultaneously with the application of the high frequency voltage. Radicals such as electrically neutral C1 in the etching gas enter the semiconductor substrate from random directions, and the etched portion 102a (the resist is removed) of the aluminum laminated film shown in FIG. Part). In the case of A1, chlorine radicals are etched, but the aluminum laminated film shown in FIG. 2 is not etched only by adsorbed chlorine radicals because the TiN is formed in the cap layer 102. However, with the help of high-energy ions drawn into the substrate by applying a high-frequency voltage, the TiN layer 102 is etched by so-called ion assist etching.
  • the surface of the substrate becomes an Al alloy 103.
  • a 1 is etched chloride A 1 C 1 3 and (or A l 2 C 1 6), and the removed vaporized.
  • Some of the vaporized aluminum chloride is It collides with the side wall of the aluminum wiring (hereinafter simply referred to as the side wall) and is adsorbed on the side wall.
  • part of the aluminum chloride released into the plasma, as it is or after being decomposed by the plasma re-enters the semiconductor substrate and adheres to the side wall.
  • a part of the resist 101 is also etched. A part of it collides directly with the side wall and is adsorbed.
  • a film composed of A 1, Cl, and C and a side wall protective film are formed on the side walls.
  • This film continues to grow as etching proceeds, but is also etched at the same time, so it is actually very thin, a few nm. Since the sidewall protective film is formed, even if chlorine radicals are adsorbed on the sidewalls of the aluminum wiring, the aluminum wiring is not etched, and as a result, anisotropic etching of a vertical shape is performed.
  • the aluminum wiring is etched under the aluminum interconnection layer is a barrier layer 1 0 4 der Ru in i N, it is S i 0 2 and the Edzuchingu material as the underlying layer 1 0 5 varies. Since the chloride of Ti has a high vapor pressure, the probability of being incorporated into the sidewall protective film is small. However, in the overetching after the etching depth reaches the oxide film, Si is slightly etched, and Si also adheres to the outermost surface of the sidewall protective film. Thus, the etching of the aluminum laminated film is completed. At the end of the etching, the high-frequency voltage applied to the electrode is stopped while maintaining the microwave discharge.
  • the supply of the Helium gas on the backside of the substrate is stopped to lower the backside pressure sufficiently.
  • the output of the microphone mouth wave is stopped, and the gas supply is also stopped.
  • the etching chamber 13 is evacuated for a while, and when a high vacuum is obtained, the valve 14 with the transfer chamber 9 is opened, and the semiconductor substrate 10 is carried out of the etching chamber 13 by the robot arm 11.
  • the resist film thickness at this time is about 1 ⁇ m.
  • the pressure in the assing chamber 18 is equal to or lower than a predetermined pressure, and the valve 19 between the assing chamber 18 and the transfer chamber 9 is opened to transfer the semiconductor substrate 10 to the asshing chamber 18. And place it on a substrate holder (not shown).
  • Substrate holder is 150 to 300 ° C, preferably at 200 to 250 ° C. Although the temperature of the semiconductor substrate has reached several 10 ° C. due to heating in the etching chamber 13, the temperature hardly rises when the semiconductor substrate is placed on the substrate holder. As the gas for asshing is introduced and the pressure rises, the heat conduction between the substrate holder and the semiconductor substrate improves, and the temperature of the semiconductor substrate gradually approaches a constant temperature.
  • the assing gas is a mixed gas of H 2 ⁇ and CF 4 . Both flow, the total flow rate set to 5 0 0 cm 3 / min- constant, H 2 0 / CF 4: was 49 5 5, 4 7 5/ 2 5 cm 3 / min.
  • the pressure was 2 Pa and the temperature of the substrate holder was 250 ° C.
  • the plasma was generated by introducing microwave 100W.
  • the plasma ignition dissociates the assing gas and generates radicals such as H, OH, ⁇ , F, CF, CF 2 , and CF 3 .
  • Oxygen radical 0 is combined with carbon C in the resist to become C 0 and is vaporized and exhausted. In this manner, the asshing is completed in about 50 to 60 seconds. In this embodiment, over-asing is further performed for 120 seconds. After that, supply of the assing gas is stopped and high vacuum evacuation is performed.
  • the valve 19 When the pressure drops to a predetermined value, the valve 19 is opened, the substrate 10 is taken out to the transfer chamber 9, and further sent to the load lock chamber 24 (unloading chamber).
  • the load lock chamber 24 In the load lock chamber 24, after the valve 23 is closed, a slow leak is performed using nitrogen gas 26, and when the pressure reaches a pressure slightly higher than the atmospheric pressure, the door 25 to the atmosphere is opened, and the robot is moved to the cassette 2. Unload by arm 3.
  • the process may immediately proceed to the step of removing the side wall protective film, but in some cases, the process may wait for a while in the air or in a nitrogen gas atmosphere until the next process. At this time, the aluminum wiring must not corrode.
  • the mixing ratio of CF 4 is set to 2% or less, preferably 1%.
  • the reason for this is that, as described above, in the mixed gas system of the present invention, when the mixing ratio of CF 4 is about 5 to 10%, the resist removal rate is the highest, but the removal of residual chlorine components in the side walls is not possible. Will be enough.
  • the reason is that Although the protective film 106 is schematically shown, the residual chlorine component in the sidewall protective film 106 reacts with H or 0 H to be removed as HC 1, so that the protective film 106 is removed. Sufficient H, 0 H must be supplied. However, when the supply of F is large, the surface of the sidewall protective film 106 is covered with the strong film 107 of A 1 F 3 as shown in FIG.
  • the CF 4 When the mixing ratio is sufficiently reduced, the A 1 F 3 film 107 is formed on the surface of the side wall protective film 106, but is not strong enough to completely block H and ⁇ H from entering. As a result, C 1 does not remain inside the side wall protective film 106 and there is little residual fluorine, so that the aluminum wiring 103 does not corrode.
  • the thermal desorption method is a method of measuring the composition of a gas that desorbs by elevating the temperature of a sample in a vacuum and the amount of released gas, and enables analysis of the gas remaining in the aluminum film.
  • Figure 5 summarizes the results of the above corrosion tests by the amount of residual chlorine and residual fluorine.
  • the horizontal axis indicates the mixing ratio of CF 4
  • the vertical axis indicates the amounts of residual chlorine and residual fluorine after asshing. The right end of FIG.
  • FIG. 5 also shows the measurement results of the residual chlorine amount and the residual fluorine amount after etching.
  • a large amount of chlorine remains in the aluminum film before assing.
  • fluorine is used during etching. Since it is not used, the amount of residual fluorine is small and can be regarded as the measurement limit value.
  • the mixing ratio of CF 4 is increased, the amount of residual chlorine and fluorine in the aluminum film is increasing. From the results in Fig. 5, it is necessary to determine the level at which the corrosion does not occur.
  • the solid line also shown in Fig. 5 is the value.
  • C 1 in the sidewall protective film is removed to prevent corrosion while satisfying the resist removal rate, and post-processing which is excellent in the removal characteristic of the sidewall protective film is also achieved. Became possible.
  • the gas system containing 0 2 the registry in the mixed gas, for example ⁇ 2 and H 2 0 is removed There may be, in this case, at 0 2 and H 2 ⁇ mixed gas in the first step, it is effective to process in subsequent gas system of the present invention. Also in this case, the surface of the sidewall protective film is fluorinated in the latter half of the process, and the removal characteristics of the sidewall protective film are improved.
  • a sufficient resist removing speed can be obtained even in an aluminum laminated film in which the resist removing speed is reduced due to the effect of aluminum attached to the resist surface.
  • the residual chlorine component during the etching is completely removed, and the aluminum wiring can be prevented from being corroded when left in the air after the completion.
  • the removal of the side wall protective film is also easy because the water-soluble A 1 F 3 is formed. For this reason, it is possible to expect an effect without the need to use special chemicals.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne un procédé de post-traitement pour gravure au plasma utilisé pour effectuer un traitement ultérieur sur un substrat de semi-conduteur comprenant un câblage en aluminium, après gravure du substrat au plasma au moyen d'un gaz contenant du chlore. Au cours du post-traitement, un gaz contenant de l'hydrogène et du fluor sert de gaz d'incinération. Le rapport du mélange de gaz fluoré est inférieur à 2 %, de préférence, environ 1 %. Par conséquent, la durée du post-traitement peut être écourtée et le retrait de la paroi latérale peut être amélioré en raison de l'augmentation de la vitesse d'incinération et le traitement anticorrosion, ainsi que la capacité d'enlèvement du substrat sont excellents. La durée du traitement du substrat et le rendement du substrat s'en trouvent, par conséquent, améliorés.
PCT/JP1997/000897 1997-03-05 1997-03-19 Procede de post-traitement pour gravure au plasma WO1998039799A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9/50343 1997-03-05
JP5034397 1997-03-05

Publications (1)

Publication Number Publication Date
WO1998039799A1 true WO1998039799A1 (fr) 1998-09-11

Family

ID=12856283

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1997/000897 WO1998039799A1 (fr) 1997-03-05 1997-03-19 Procede de post-traitement pour gravure au plasma

Country Status (2)

Country Link
TW (1) TW367555B (fr)
WO (1) WO1998039799A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011061160A (ja) * 2009-09-14 2011-03-24 Tokyo Electron Ltd 基板処理装置及び方法
KR101311277B1 (ko) * 2011-12-16 2013-09-25 주식회사 테스 기판처리시스템

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590223A (ja) * 1991-01-22 1993-04-09 Toshiba Corp 半導体装置の製造方法及び半導体製造装置
JPH05226299A (ja) * 1991-10-21 1993-09-03 Seiko Epson Corp 半導体装置の製造方法
JPH08180698A (ja) * 1994-12-22 1996-07-12 Toshiba Corp 半導体記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590223A (ja) * 1991-01-22 1993-04-09 Toshiba Corp 半導体装置の製造方法及び半導体製造装置
JPH0590225A (ja) * 1991-01-22 1993-04-09 Toshiba Corp 半導体装置の製造方法
JPH05226299A (ja) * 1991-10-21 1993-09-03 Seiko Epson Corp 半導体装置の製造方法
JPH08180698A (ja) * 1994-12-22 1996-07-12 Toshiba Corp 半導体記憶装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011061160A (ja) * 2009-09-14 2011-03-24 Tokyo Electron Ltd 基板処理装置及び方法
US9209055B2 (en) 2009-09-14 2015-12-08 Tokyo Electronics Limited Substrate processing apparatus
KR101311277B1 (ko) * 2011-12-16 2013-09-25 주식회사 테스 기판처리시스템

Also Published As

Publication number Publication date
TW367555B (en) 1999-08-21

Similar Documents

Publication Publication Date Title
KR960000375B1 (ko) 반도체장치의 제조방법
JP2000012514A (ja) 後処理方法
KR950010044B1 (ko) 반도체 집적회로의 제조방법 및 그에 사용된 제조장치
JP3259380B2 (ja) 半導体装置の製造方法
EP0416774B1 (fr) Procédé de traitement d'un échantillon de matériau contenant de l'aluminium
US7585777B1 (en) Photoresist strip method for low-k dielectrics
JP2000311889A (ja) プラズマエッチングを特長とする腐食防止表面のエッチング後の処理方法
KR20100131407A (ko) 레지스트용 박리제조성물 및 반도체장치의 제조방법
JPH07283320A (ja) 半導体装置を形成する方法
JPH04311033A (ja) 半導体デバイスのエッチング後処理方法
TW507286B (en) Method and apparatus for fabricating semiconductor devices
US8277672B2 (en) Enhanced focused ion beam etching of dielectrics and silicon
JPH10178014A (ja) 半導体装置の製造方法
JPH10189537A (ja) ドライエッチング方法
WO1998039799A1 (fr) Procede de post-traitement pour gravure au plasma
JP3263132B2 (ja) 半導体装置の製造方法
JPH08306668A (ja) アッシング方法
US7055532B2 (en) Method to remove fluorine residue from bond pads
JP4228424B2 (ja) 半導体装置の製造方法
JP4559565B2 (ja) 金属配線の形成方法
JPH01243528A (ja) 表面処理方法
TW201517169A (zh) 預清洗半導體結構
JPH0793293B2 (ja) 後処理方法
JP3428927B2 (ja) ドライエッチング方法
JP3104840B2 (ja) 試料の後処理方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CN JP KR SG US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase