WO1998012749A3 - Emittergesteuerter thyristor - Google Patents

Emittergesteuerter thyristor Download PDF

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Publication number
WO1998012749A3
WO1998012749A3 PCT/EP1997/005165 EP9705165W WO9812749A3 WO 1998012749 A3 WO1998012749 A3 WO 1998012749A3 EP 9705165 W EP9705165 W EP 9705165W WO 9812749 A3 WO9812749 A3 WO 9812749A3
Authority
WO
WIPO (PCT)
Prior art keywords
zone
cathode
emitter
whose
nmosfet
Prior art date
Application number
PCT/EP1997/005165
Other languages
English (en)
French (fr)
Other versions
WO1998012749A2 (de
Inventor
Shuming Xu
Rainer Constapel
Jacek Korec
Original Assignee
Vishay Semiconductor Gmbh
Shuming Xu
Rainer Constapel
Jacek Korec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay Semiconductor Gmbh, Shuming Xu, Rainer Constapel, Jacek Korec filed Critical Vishay Semiconductor Gmbh
Priority to EP97943875A priority Critical patent/EP0976157A2/de
Priority to US09/269,599 priority patent/US6118141A/en
Publication of WO1998012749A2 publication Critical patent/WO1998012749A2/de
Publication of WO1998012749A3 publication Critical patent/WO1998012749A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

Bei einem emittergesteuerten Thyristor mit einem Hauptthyristor (TH), der aus einem p+-Anodenemitter (1), einer Driftzone (3') mit entgegengesetztem Leitungstyp, einer Zone (4), welche im ausgeschalteten Zustand gegenüber der Zone (3) eine Sperrzone aufweist und einer kathodenseitigen Emitterzone (5) mit wiederum umgekehrten Leitungstyp gebildet ist, so daß eine Zonenfolge p+n-pn+ entsteht, ist eine dazu parallelliegende Transistorstruktur (T) aus den ersten drei Gebieten abwechselnder Leitfähigkeit mit einem Emitter (1) der Basis (3) und dem Kollektor (8) vorgesehen. Diese Struktur enthält einen NMOSFET (M1) zur direkten Ansteuerung des Kathodenemitters (5) durch den Kathodenanschluß (KA), wobei die Source dieses Transistors von der Kathode ebenso kontaktiert wird, wie das Kollektorgebiet (8), welches an der Oberfläche des Halbleiters ein Kanalgebiet des MOSFET bildet, wobei das zugehörige Draingebiet über einen elektrischen Leiter (6) mit dem n+-Kathodenemitter (5) des Hauptthyristors (TH) verbunden ist. Weiterhin ist ein Einschalt-DMOSFET (M2) vorgesehen, dessen Gate (G2) mit dem Gate (G1) des NMOSFET (M1) verbunden ist, einer Source (S2), welche von der Kathode (K) kontaktiert ist und in einer p-Basis eingebettet ist, wobei eine leitende Verbindung mit der Kathodenkontaktierung des NMOSFET zum Einschalten (M1) besteht und die gemeinsame Verbindung zu einem Kathodenanschluß (KA) geführt ist. Ein Draingebiet (D2) ist in die Driftzone (3) eingebettet, wobei die Substratgebiete von M1 und M2 mit der Kathode kontaktiert sind. Die Struktur enthält einen PMOSFET (M3), dessen Gate mit der Kathode verbunden ist und dessen Drain (D3) Teil des Kollektorgebiets (8) des Transistors (T) für den Nebenstrom ist, dessen Sourcegebiet mit dem kathodennahen Basisgebiet (4) des Hauptthyristors (TH) verbunden ist und dessen Substratgebiet von einem Teil der n-dotierten Zone (3) gebildet wird, welches an die Oberfläche des Bauelements grenzt.
PCT/EP1997/005165 1996-09-21 1997-09-20 Emittergesteuerter thyristor WO1998012749A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP97943875A EP0976157A2 (de) 1996-09-21 1997-09-20 Emittergesteuerter thyristor
US09/269,599 US6118141A (en) 1996-09-21 1997-09-20 Emitter-switched thyristor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19638769.8 1996-09-21
DE19638769A DE19638769C1 (de) 1996-09-21 1996-09-21 Emittergesteuerter Thyristor

Publications (2)

Publication Number Publication Date
WO1998012749A2 WO1998012749A2 (de) 1998-03-26
WO1998012749A3 true WO1998012749A3 (de) 1999-11-25

Family

ID=7806465

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1997/005165 WO1998012749A2 (de) 1996-09-21 1997-09-20 Emittergesteuerter thyristor

Country Status (4)

Country Link
US (1) US6118141A (de)
EP (1) EP0976157A2 (de)
DE (1) DE19638769C1 (de)
WO (1) WO1998012749A2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9921068D0 (en) * 1999-09-08 1999-11-10 Univ Montfort Bipolar mosfet device
JP2001085463A (ja) * 1999-09-09 2001-03-30 Rohm Co Ltd 半導体チップおよびそれを用いた半導体装置
DE19961297A1 (de) * 1999-12-18 2001-06-21 Bosch Gmbh Robert Schaltungsanordnung zur Verpolsicherung eines DMOS-Transistors
JPWO2002059478A1 (ja) * 2001-01-24 2004-05-27 株式会社日立製作所 内燃機関用点火装置
KR100463029B1 (ko) * 2002-03-25 2004-12-23 재단법인서울대학교산학협력재단 수평형 사이리스터
US6888176B1 (en) * 2002-10-01 2005-05-03 T-Ram, Inc. Thyrister semiconductor device
CN101484996B (zh) * 2006-05-18 2011-05-18 意法半导体股份有限公司 具有高开关速度的三端功率器件以及制造工艺
JP2008028353A (ja) * 2006-06-22 2008-02-07 Sony Corp 半導体装置およびその駆動方法
US8519432B2 (en) * 2007-03-27 2013-08-27 Analog Devices, Inc. Semiconductor switch
US10784372B2 (en) * 2015-04-03 2020-09-22 Magnachip Semiconductor, Ltd. Semiconductor device with high voltage field effect transistor and junction field effect transistor
CN105336767A (zh) * 2015-10-08 2016-02-17 深圳市可易亚半导体科技有限公司 横向沟槽电极双通道发射极关断晶闸管
CN112838084B (zh) * 2021-01-05 2023-05-12 湖南大学 一种SiC GTO与MESFET集成结构及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994006158A1 (de) * 1992-08-29 1994-03-17 Daimler-Benz Aktiengesellschaft Feldeffektgesteurtes halbleiterbauelement
EP0675545A2 (de) * 1994-04-01 1995-10-04 Fuji Electric Co. Ltd. Thyristor mit isoliertem Gate
DE19508510A1 (de) * 1994-03-09 1995-11-09 Toshiba Kawasaki Kk Thyristor
EP0736910A2 (de) * 1995-04-03 1996-10-09 Fuji Electric Co. Ltd. Thyristor mit isoliertem Gate

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE7407224L (sv) * 1974-05-31 1975-12-01 Tore Georg Palmaer Takkonstruktion
JPH05283702A (ja) * 1992-04-03 1993-10-29 Hitachi Ltd 複合制御型半導体装置及びそれを使用した電力変換装置
US5498884A (en) * 1994-06-24 1996-03-12 International Rectifier Corporation MOS-controlled thyristor with current saturation characteristics
US5665988A (en) * 1995-02-09 1997-09-09 Fuji Electric Co., Ltd. Conductivity-modulation semiconductor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994006158A1 (de) * 1992-08-29 1994-03-17 Daimler-Benz Aktiengesellschaft Feldeffektgesteurtes halbleiterbauelement
DE19508510A1 (de) * 1994-03-09 1995-11-09 Toshiba Kawasaki Kk Thyristor
EP0675545A2 (de) * 1994-04-01 1995-10-04 Fuji Electric Co. Ltd. Thyristor mit isoliertem Gate
EP0736910A2 (de) * 1995-04-03 1996-10-09 Fuji Electric Co. Ltd. Thyristor mit isoliertem Gate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LILJA K ET AL: "A FILAMENTATION-FREE INSULATED-GATE CONTROLLED THYRISTOR AND COMPARISONS TO THE IGBT", PROCEEDINGS OF THE 8TH. INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC'S (ISPSD), MAUI, HAWAII, MAY 20 - 23, 1996, no. SYMP. 8, 20 May 1996 (1996-05-20), SALAMA C A T;WILLIAMS R K (EDS ), pages 275 - 278, XP000598439 *

Also Published As

Publication number Publication date
US6118141A (en) 2000-09-12
DE19638769C1 (de) 1998-03-05
WO1998012749A2 (de) 1998-03-26
EP0976157A2 (de) 2000-02-02

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