EP0736910A2 - Thyristor mit isoliertem Gate - Google Patents

Thyristor mit isoliertem Gate Download PDF

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Publication number
EP0736910A2
EP0736910A2 EP96105105A EP96105105A EP0736910A2 EP 0736910 A2 EP0736910 A2 EP 0736910A2 EP 96105105 A EP96105105 A EP 96105105A EP 96105105 A EP96105105 A EP 96105105A EP 0736910 A2 EP0736910 A2 EP 0736910A2
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EP
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Prior art keywords
conductivity
type
region
base region
type base
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EP96105105A
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English (en)
French (fr)
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EP0736910A3 (de
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Noriyuki c/o Fuji Electric Co. Ltd. Iwamuro
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Definitions

  • the present invention relates in general to an insulated gate thyristor. More specifically, the invention relates to an insulated gate thyristor used as a power switching device.
  • Thyristors have been used as indispensable devices for large capacity power switching owing to their low ON-state voltage characteristics.
  • GTO gate turn-off
  • the GTO thyristor has revealed drawbacks as follows: first, the GTO thyristor requires large gate current for turn-off, in other words, the thyristor has a relatively small turn-off gain; and secondly, it requires a large-sized snubber is needed to safely turn off the GTO thyristor.
  • a passive component such as a fuse, must be coupled to the thyristor so as to protect its load from short-circuiting. This greatly impedes the reduction in the size and cost of the whole system.
  • a MOS controlled thyristor (MCT) as a voltage-driven type thyristor was disclosed by V. A. K. Temple in IEEE IEDM Tech. Dig., 1984, p282. Since then, the characteristics of this type of thyristor have been analyzed and improved in various institutions worldwide. This is because the MCT, which is a voltage-driven type of device, requires a far simpler gate circuit than the GTO thyristor, while assuring a relatively low ON-state voltage characteristic. The MCT, however, does not show a current saturation characteristic, like the GTO thyristor, and therefore requires a passive component, such as a fuse, in its practical use.
  • a first p base region 4, a p + well region 5 and a second p base region 6 are formed in a surface layer of an n base layer 3 deposited on a p emitter layer 1 through an n + buffer layer 2.
  • the p + well region 5 forms a part of the first p base layer 4, and has a relatively large diffusion depth.
  • An n source region 7 is formed in a surface layer of the first p base region 4, and an n emitter layer 8 is formed in a surface layer of the second p base region 6.
  • a gate electrode 10 is formed through a gate oxide film 9 over a portion of the first p base region 4 that is interposed between the n source region 7 and an exposed portion of the n base layer 3, and a portion of the second p base region 6 that is interposed between the n emitter region 8 and the exposed portion of the n base layer 3.
  • the length of each of the n source region 7, n emitter region 8 and the gate electrode 10 is limited in the Z direction of Fig. 14, and the first p base region 4 and the second p base region 6 are connected to each other outside these regions 7, 8 and electrode 10.
  • the L-shaped p + well region 5 is formed outside the connected portion of the first and second p base regions 4, 6.
  • a cathode 11 is formed in contact with both a surface of the p + well region 5, and a surface of the n source region 7.
  • an anode 12 is formed over the entire area of the rear surface of the p emitter layer 1.
  • the device operates in an IGBT (insulated gate bipolar transistor) mode.
  • IGBT insulated gate bipolar transistor
  • the pn junction between the n emitter region 8 and the second p base region 6 is forward biased, a built-in thyristor consisting of the p emitter layer 1, n + buffer layer 2, n base layer 3, second p base region 6 and the n emitter region 8 latches up.
  • the MOSFET is switched off by lowering the potential of the gate electrode 10 below the threshold of the lateral MOSFET.
  • the n emitter region 8 is potentially separated from the cathode 11, so that the operation of the thyristor is stopped.
  • the holes flowing in the second p base region 6 in the Z direction are utilized to forward bias the pn junction between the second p base region 6 and the n emitter region 8, a degree or strength (depth) of the forward bias decreases in the Z direction toward a contact area of the second p base region 6 with the cathode 11. Namely, the amount of electrons injected from the n emitter region 8 is not uniform over the length of the pn junction in the Z direction.
  • Figs. 15 and 16 show improved ESTs as disclosed in U.S. Patent Nos. 5,317,171 issued on May 31, 1994 and 5,319,222 issued on June 7, 1994 to M.S. Shekar et al.
  • the EST shown in Fig. 15 operates in the same manner as the EST of Fig. 14, the EST of Fig. 15 can be turned off more rapidly due to direct contact of the cathode 11 extending in the Y direction, with a surface of the second p base region 6. Further, the EST of Fig. 15 shows a uniform turn-off characteristic due to the absence of the hole current flowing in the Z direction.
  • the minority carriers are not uniformly injected along the horizontal direction (Y direction) when the pn junction between the n emitter region 8 and the second p base region 6 is turned on or forward biased, and therefore the ON-state voltage cannot be lowered to such an extent as expected. If the impurity concentration of the second p base region 6 is reduced to increase its resistance, for example, so as to solve this problem, a depletion layer is punched through the n emitter region 8 upon withstanding of the voltage applied in the forward direction. Thus the conventional EST cannot achieve a sufficient withstand voltage.
  • the n emitter region 8 extends beyond the second p base region 6 so as to further lower the ON-state voltage. This structure, however, is unable to withstand the voltage applied in the forward direction.
  • the ON-state voltage decreases with an increase in the ratio of the area of the thyristor to that of the IGBT.
  • the ON-state voltage also decreases with an increase in the current amplification factor of an npn transistor of the thyristor.
  • a first aspect of the present invention provides an insulated gate thyristor comprising: a first-conductivity-type base layer having a high resistivity; a first and a second second-conductivity-type base region formed in spaced-apart selected areas of a surface layer of one of major surfaces of the first-conductivity-type base layer; a first-conductivity-type source region formed in a selected area of a surface layer of the first second-conductivity-type base region; a first-conductivity-type emitter region formed in a selected area of a surface layer of the second second-conductivity-type base region; a gate electrode formed through an insulating film on exposed portions of the first second-conductivity-type base region, the first-conductivity-type base layer, and the second second-conductivity-type base region, the exposed portions being interposed between the first-conductivity-type source region and the first-conductivity-type emitter region; a first main electrode held in
  • a second aspect of the present invention which provides an insulated gate thyristor comprising: a first-conductivity-type base layer having a high resistivity; a first and a second second-conductivity-type base region formed in spaced-apart selected areas of a surface layer of one of major surfaces of the first-conductivity-type base layer; a first-conductivity-type source region formed in a selected area of a surface layer of the first second-conductivity-type base region; a first-conductivity-type emitter region formed in a selected area of a surface layer of the second second-conductivity-type base region; a gate electrode formed through an insulating film on exposed portions of the first second-conductivity-type base region, the first-conductivity-type base layer, and the second second-conductivity-type base region, the exposed portions being interposed between the first-conductivity-type source region and the first-conductivity-type emitter region; a first-conductivity-type base layer having a high
  • a contact area between the second second-conductivity-type base region and the second-conductivity-type semiconductor film has one of polygonal, circular and elliptical shapes.
  • the first-conductivity-type semiconductor film and the second-conductivity-type semiconductor film are formed of polycrystalline silicon.
  • a contact area between the first main electrode, and the first second-conductivity-type base region and the first-conductivity-type source region has one of polygonal, circular and elliptical shapes.
  • the first-conductivity-type semiconductor film which is interposed between and held in contact with the main electrode and the exposed portion of the second second-conductivity-type base region, cooperates with the second second-conductivity-type base region to form a diode.
  • this arrangement about 0.7V of a diffusion potential difference of the diode arises between the second second-conductivity-type base region and the first-conductivity-type semiconductor film, and electrons are injected from the first-conductivity-type emitter region due to the potential difference.
  • this device does not require the hole current flowing in the Z direction in the second second-conductivity-type base region as in the conventional EST as described above.
  • the present device With the electrons uniformly injected from the entire length of the first-conductivity-type emitter region, the present device can be rapidly shifted to its thyristor mode, assuring reduced ON-state voltage. Upon turn-off of the device, the pn junction can uniformly resume its reverse-blocking ability, due to the potential difference, thus avoiding current localization or concentration.
  • EP-A-0 675 545 discloses an insulated gate thyristor having a structure similar to that according to the first aspect of the present invention.
  • a polycrystalline silicon layer is provided on the second second-conductivity type base region to form a resistor rather than, in cooperation with the base region, a diode.
  • the polycrystalline silicon layer is doped with boron at a dose of about 10 13 cm -2 and then heat treated resulting in a p type layer on the p base region.
  • the first-conductivity-type semiconductor film of the present invention is employed as a semiconductor layer to cooperate with the second second-conductivity-type base region in forming a diode.
  • One advantage of a diode as compared to the resistor is that there is substantially less variation in the ON-state voltage between production lots or batches. The reason is that the variation in the diffusion potential of the diodes in different production lots is low. On the other hand, it is difficult to exactly control the resistance of the polycrystalline resistor in the prior art resulting in more substantial variations between different production lots.
  • the second-conductivity-type semiconductor film is held in contact with the exposed portion of the second second-conductivity-type base region, and the first-conductivity-type semiconductor film, which is interposed between and held in contact with the second-conductivity-type semiconductor film and the first main electrode, cooperates with the second-conductivity-type semiconductor film to form a diode having a diffusion potential difference as described above.
  • the shapes of the contact area between the second second-conductivity-type base region and the first-conductivity-type semiconductor film, the contact area between the second second-conductivity type base region and the second-conductivity-type semiconductor film, and the contact area between the first main electrode, and the first second-conductivity-type base region and first-conductivity-type source region may be advantageously selected from polygonal, circular and elliptical shapes.
  • the semiconductor substrate can be utilized with improved efficiency, and the current is uniformly distributed within the device, assuring improved thermal balance.
  • a semiconductor film is formed of polycrystalline silicon, it can be easily formed, and has good compatibility with phosphorus glass, a cathode, and a surface of a semiconductor substrate, and its resistivity can be adjusted as desired.
  • first conductivity type is n type and the second conductivity type is p type in the following embodiments, the first and second conductivity types may be p type and n type, respectively.
  • Fig. 1 is a perspective view in cross section, showing an insulated gate thyristor as the first embodiment of the present invention.
  • This figure only shows a part of an active region of the thyristor assigned to perform switching of electric current, and a plurality of units are integrated by repeatedly reversing one unit as shown in Fig. 1, to thereby provide a semiconductor device.
  • the insulated gate thyristor further includes a peripheral portion that contributes to withstanding voltage, as well as the active region as shown in the figure.
  • the peripheral portion is not related to the principle of the present invention, and therefore will not be described in detail nor shown in the figure.
  • the insulated gate thyristor of Fig. 1 has a semiconductor substrate portion which is similar in construction to that of the EST of Fig. 14. Specifically, a first p base region 4 and a second p base region 6 are formed in a surface layer of an n base layer 3 having a relatively high resistivity. Further, a p + well region 5 is formed in a part of the first p base region 4 so as to avoid latch-up of a parasitic thyristor. A p emitter layer 1 is formed on the other surface of the n base layer 3, through an n + buffer layer 2 having a higher impurity concentration than the n base layer 3.
  • n source region 7 is formed in a surface layer of the first p base region 4, and an n emitter region 8 is formed in a surface layer of the second p base region 6.
  • a gate electrode 10 is formed through a gate oxide film 9 over the first p base region 4, n base layer 3 and second p base region 6, which are interposed between the n source region 7 and the n emitter region 8, to thereby provide an n-channel lateral MOSFET.
  • a surface of the MOSFET on the side of the gate electrode 10 is covered with an insulating film 14 made of phosphorus glass (PSG), through which film is formed a contact hole.
  • a polycrystalline silicon film 13 is deposited on the insulating film 14, and heat-treated, such that the film 13 contacts the second p base region 6 through the contact aperture.
  • a cathode 11 is provided to cover the insulating film 14 and the polycrystalline silicon film 13.
  • Fig. 2 is a cross sectional view taken in a horizontal plane extending through the middle of gate electrodes 10 of a plurality of cells (each of which is shown in Fig. 1) constituting the MOSFET.
  • the same reference numerals as used in Fig. 1 are used to identify corresponding elements.
  • the cathodes 11, gate electrodes 10, polycrystalline silicon film 13, and insulating films 14 that separate these elements 11, 10, 13 from each other are all arranged in the form of stripes.
  • a pnp transistor which consists of the p emitter layer 1, the n + buffer layer 2 and n base layer 3, and the p base regions 4, 6 and p + well region 5.
  • This pnp transistor is operated with this base current.
  • Part of holes emitted from the p emitter layer 1 flow toward the second p base region 6, through the n + buffer layer 2 and n base layer 3.
  • the holes then pass through the polycrystalline silicon film 13 to reach the cathode 11.
  • the hole current needs to exceed a diffusion potential of a diode formed by the second p base region 6 and the n type polycrystalline silicon film 13.
  • the n polycrystalline silicon film 13 may be formed by doping with phosphorus at a dose of 10 14 - 10 16 cm -2 and subsequent heat treatment at about 1000°C for 30 to 60 min. resulting in a doping concentration of about 10 17 - 10 18 cm -3 .
  • electrons are injected from the n emitter region 8, whereby the thyristor consisting of the p emitter layer 1, n + buffer layer 2 and n base layer 3, second p base region 6, and n emitter region 8 is operated.
  • the potential of the gate electrode 10 is lowered below the threshold of the lateral MOSFET, to turn off this MOSFET, so that the n emitter region 8 is electrically separated from the cathode 11, and the thyristor stops operating.
  • the insulated gate thyristor of Fig. 1 is different from that of Fig. 14 in that the thyristor of Fig. 1 includes the second p base region 6 and the n type polycrystalline silicon film 13 which are in contact with each other and constitute a diode.
  • the present thyristor does not require the hole current flowing through the second p base region in the Z direction as in the conventional EST, and permits rapid transition from the IGBT mode to the thyristor mode. Further, the ON-state voltage is lowered since the electrons are uniformly injected from the whole n emitter region 8.
  • the pn junction between the n emitter region 8 and the second p base region 6 can uniformly resume its reverse-blocking ability, due to the potential difference, and the current does not concentrate in any limited area, in other words, current localization or concentration can be avoided, with a result of a significantly increased reverse bias safe operation area (RBSOA).
  • RSOA reverse bias safe operation area
  • the graph of Fig. 6 indicates a voltage-current relationship to show results of measurements of the reverse bias safe operation areas (RBSOA) of the insulated gate thyristor shown in Fig. 1 as the first embodiment of the present invention, ESTs as comparative examples, including EST-1 as shown in Fig. 14, EST-2 as shown in Fig. 15 and EST-3 as shown in Fig. 16, and an IGBT as another comparative example.
  • the RBSOA was measured at 125°C with a measuring circuit as shown in Fig. 7.
  • the axis of abscissa indicates a voltage between the anode and the cathode, and the axis of ordinates indicates electric current.
  • Fig. 6 the axis of abscissa indicates a voltage between the anode and the cathode, and the axis of ordinates indicates electric current.
  • a device 21 to be measured was connected to a dc power supply 24, through a 1mH inductor 22 and a free-wheeling diode 23 connected in parallel with the inductor 22, and a gate of the device 21 was connected to a gate power supply 26, through a resistor 25 of 20 ⁇ .
  • the device 21 was produced as a 600V-class device, using a wafer comprised of the n + buffer layer 2 in the form of a 10 ⁇ m-thickness n layer having a resistivity of 0.1 ⁇ cm, and the n base layer 3 in the form of a 55 ⁇ m-thickness n layer having a resistivity of 40 ⁇ cm, which were epitaxially grown on a 450 ⁇ m-thickness p type silicon substrate having a resistivity of 0.02 ⁇ m.
  • the n emitter region 8 and the n source region 7 had the width of 6 ⁇ m and 4 ⁇ m, respectively.
  • the width of the n emitter region 8 of EST-2 and EST 3 was 20 ⁇ m. All of the five devices of Figs.
  • the ON-state voltage which was defined by a fall of potential occurring when a current of 100A is conducted through the relevant device, was 0.9 V for the insulated gate thyristor of the present invention, 1.6 V for the EST-1, 1.7V for the EST-2, 1.0V for the EST-3, and 2.3 V for the IGBT. It will be understood from Fig. 6 that the device of the first embodiment of the present invention has a lower ON-state voltage as compared with the other four devices, and the safe operation areas indicate that the breakdown withstand capability of the device of the invention is three times as high as that of the IGBT and twice as high as that of the ESTs.
  • the ON-state voltage can be lowered without affecting other characteristics. This is because the proportion of the area of the thyristor portion is increased with an increase in the length of the n emitter region 8, and the pn junction between the n emitter region 8 and the second p base region 6 can resume its reverse-blocking ability uniformly over the entire length thereof, with the second p base region 6 functioning as a bypass of the hole current.
  • Fig. 3 is a cross sectional view of an insulated gate thyristor as the second embodiment of the present invention, as taken in a plane extending through the middle of the gate electrode 10.
  • the first p base region 4 and the n source region 7 as a part of its surface layer, and the second p base region 6 and the n emitter region 8 as a part of its surface layer are formed through square holes provided in the gate electrode 10.
  • cathodes 11 each of which contacts a surface of the corresponding n source region 7, through a contact hole formed through the insulating film 14 deposited on the upper and side faces of the gate electrode 10, and also shown polycrystalline silicon films 13 each of which contacts a surface of the corresponding second p base region 6, through a contact hole formed through the insulating film 14.
  • Fig. 4 is a cross sectional view of an insulated gate thyristor according to the third embodiment of the present invention, as taken in a plane extending through the middle of the gate electrode 10.
  • the first p base region 4 and the n source region 7 as a part of its surface layer, and the second p base region 6 and the n emitter region 8 as a part of its surface layer are formed through circular holes provided in the gate electrode 10.
  • This embodiment differs from the second embodiment of Fig. 3 only in respect of its pattern or shape of the holes, and the arrangement of the gate electrode 10, cathode 11, polycrystalline silicon film 13 and insulating film 14 of this embodiment is the same as that of the second embodiment.
  • Fig. 5 is a cross sectional view of an insulated gate thyristor according to the fourth embodiment of the present invention, as taken in a plane extending through the middle of the gate electrode 10.
  • the first p base region 4 and the n source region 7 as a part of its surface layer, and the second p base region 6 and the n emitter region 8 as a part of its surface layer are formed through elliptic holes provided in the gate electrode 10.
  • This embodiment differs from the second and third embodiments of Figs. 3 and 4 only in respect of its pattern or shape of the holes, and the arrangement of the gate electrode 10, cathode 11, polycrystalline silicon film 13 and insulating film 14 of this embodiment is the same as that of those embodiments.
  • TABLE 1 also indicates results of the same measurements with respect to insulated gate thyristor having cells with hexagonal, octagonal and dodecagonal holes formed through the gate electrodes 10 for forming the first p base region 4 and the n source region in its surface layer, and the second p base region 6 and the n emitter region 8 in its surface layer.
  • all of these thyristors exhibited low ON-state voltages of around 0.84 V, and large RBSOAs of 1000A or greater.
  • the width of the n source region of each cell was 4 ⁇ m, and the width of the n emitter region was 10 ⁇ m.
  • the ON-state voltage is considered as a level (V) at 100Acm -2
  • the RBSOA is considered as a level (A) when the voltage V AK between the anode and the cathode is 500V.
  • Fig. 8 is a fragmentary cross sectional view of an insulated gate thyristor according to the fifth embodiment of the present invention.
  • an insulating film 15 consisting of a 0.7 ⁇ m-thickness silicon oxide film is disposed between the polycrystalline silicon film 13 and the cathode 11, and a contact area between the polycrystalline silicon film 13 and the cathode 11 is located above an exposed portion of the (upper) surface of then base layer 3.
  • the location of the contact area between the polycrystalline silicon film 13 an the cathode 11 may be freely selected.
  • Fig. 9 is a fragmentary cross sectional view of an insulated gate thyristor according to the sixth embodiment of the present invention.
  • a polycrystalline silicon layer provides a diode consisting of a p type polycrystalline silicon film 19 and an n type polycrystalline silicon film 13.
  • these devices of Figs. 8 and 9 provide relatively low ON-state voltages and large RBSOAs, since the pn junction between the n emitter region 8 and the second p base region 6 can resume its reverse-blocking ability uniformly over the entire length thereof, and the second p base region 6 functions as a bypass of the hole current.
  • n + buffer layer 2 is provided between the p emitter layer 1 and the n base layer 3 in any of the devices of the illustrated embodiments, the present invention is equally applicable to a device having no n + buffer layer 2.
  • Fig. 10 is a fragmentary cross sectional view of an insulated gate thyristor according to the seventh embodiment of the present invention, which is produced using a bulk silicon wafer. While the structure on one of major surfaces of the n base layer 3 consisting of the bulk silicon wafer is the same as that of the first embodiment of Fig. 1, the present embodiment differs from the first embodiment in that the p emitter layer 1 is directly formed on the other surface of the n base layer 3.
  • the graph of Fig. 11 shows results of measurements of the reverse bias safe operation areas (RBSOA) as measured at 125°C with respect to 2500V-class devices of the insulated gate thyristor of Fig. 10 as the seventh embodiment of the present invention, and EST-1 of Fig. 14, EST-2 of Fig. 15, EST-3 of Fig. 16, and an IGBT as comparative examples.
  • the axis of abscissa indicates voltage between the anode and the cathode, and the axis of ordinates indicates an electric current.
  • the thickness of the n base layer 3 was 440 ⁇ m.
  • the ON-state voltages of these five devices were 1.1V, 2.0V, 2.2V, 1.4V and 3.3V, respectively.
  • the device of the present invention using the bulk wafer, as well as the above-indicated 600V-class device using an epitaxial wafer provided a significantly larger RBSOA and a relatively low ON-state voltage, as compared with those of the ESTs and IGBT.
  • the effects of the present invention do not vary depending upon the resistivity of the n base layer 3 and the current amplification factor of the pnp wide base transistor, and the RBSOA can be significantly increased without even slightly increasing the ON-state voltage.
  • the present invention is effective to reduce the ON-state voltage and increase the RBSOA, without regard to a rated voltage of the device, and a method of producing a semiconductor crystal of the substrate of the device.
  • the graph of Fig. 12 shows a trade-off characteristic between the ON-state voltage and turn-off time of the 600V-class devices as described above
  • the graph of Fig. 13 shows a trade-off characteristic between the ON-state voltage and turn-off time of the 2500-class devices.
  • the axis of abscissa indicates the ON-state voltage
  • the axis of ordinates indicates the turn-off time.
  • the ON-state voltage was indicated by a fall of potential occurring at 25°C when a current of 100A/cm 2 was conducted through the 600V-class device, or when a current of 50A/cm 2 was conducted through the 2500V-class device.
  • the turn-off time was measured at 125°C. It is found that in either case, the device of the present invention exhibits a better trade-off characteristic than the ESTs and IGBT.
  • first and second conductivity types are n type and p type, respectively, in the illustrated embodiments, these conductivity types may be reversed, namely, the first conductivity type may be p type and the second conductivity type may be n type. In this case, the doping concentrations and resistivities mentioned above apply correspondingly.
  • the thyristor is shifted from the IGBT mode into the latch-up state, utilizing a fall of potential induced by the current flowing in the Z direction.
  • a first-conductivity-type semiconductor film is provided between a main electrode and a second second-conductivity-type base region, to cooperate with the second-conductivity type base region to form a diode, and a diffusion potential difference of this diode is utilized to allow the pn junction to recover its reverse-blocking ability uniformly over its entire length, upon turn-off of the device.
  • the voltage-driven type insulated gate thyristor provides a larger reverse bias safe operation area and exhibits a better trade-off characteristic than the EST and IGBT, in a wide voltage withstand range from 600V class to 2500V class.

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  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
EP96105105A 1995-04-03 1996-03-29 Thyristor mit isoliertem Gate Withdrawn EP0736910A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP77531/95 1995-04-03
JP7077531A JPH08274306A (ja) 1995-04-03 1995-04-03 絶縁ゲート型サイリスタ

Publications (2)

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EP0736910A2 true EP0736910A2 (de) 1996-10-09
EP0736910A3 EP0736910A3 (de) 1997-09-03

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EP96105105A Withdrawn EP0736910A3 (de) 1995-04-03 1996-03-29 Thyristor mit isoliertem Gate

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US (1) US5684306A (de)
EP (1) EP0736910A3 (de)
JP (1) JPH08274306A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998012749A2 (de) * 1996-09-21 1998-03-26 Vishay Semiconductor Gmbh Emittergesteuerter thyristor

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125896A (ja) * 1996-10-16 1998-05-15 Fuji Electric Co Ltd 絶縁ゲート型サイリスタ
KR19990027859A (ko) * 1997-09-30 1999-04-15 윤종용 에미터 스위치 사이리스터
US7456439B1 (en) * 2001-03-22 2008-11-25 T-Ram Semiconductor, Inc. Vertical thyristor-based memory with trench isolation and its method of fabrication
US9203237B2 (en) * 2012-04-24 2015-12-01 Nxp B.V. Protection circuit
CN112885900B (zh) * 2019-11-29 2022-04-15 苏州东微半导体股份有限公司 一种igbt器件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2825794A1 (de) * 1978-06-13 1979-12-20 Licentia Gmbh Abschaltbarer thyristor mit mindestens vier schichten unterschiedlichen leitfaehigkeittyps, bei dem die abschaltung durch kurzschliessen der der steuerbasisschicht benachbarten kontaktierten aeusseren emitterschicht mit der anliegenden, nach aussen gefuehrten und kontaktierten steuerbasisschicht erfolgt
DE3902300A1 (de) * 1988-01-30 1989-08-10 Toshiba Kawasaki Kk Abschalt- oder gto-thyristor mit schaltsteuer-feldeffekttransistor
WO1993022796A1 (en) * 1992-04-29 1993-11-11 North Carolina State University Mos gated thyristor with remote turn-off electrode
DE4228832A1 (de) * 1992-08-29 1994-03-10 Daimler Benz Ag Feldeffekt-gesteuertes Halbleiterbauelement
EP0675545A2 (de) * 1994-04-01 1995-10-04 Fuji Electric Co. Ltd. Thyristor mit isoliertem Gate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2825794A1 (de) * 1978-06-13 1979-12-20 Licentia Gmbh Abschaltbarer thyristor mit mindestens vier schichten unterschiedlichen leitfaehigkeittyps, bei dem die abschaltung durch kurzschliessen der der steuerbasisschicht benachbarten kontaktierten aeusseren emitterschicht mit der anliegenden, nach aussen gefuehrten und kontaktierten steuerbasisschicht erfolgt
DE3902300A1 (de) * 1988-01-30 1989-08-10 Toshiba Kawasaki Kk Abschalt- oder gto-thyristor mit schaltsteuer-feldeffekttransistor
WO1993022796A1 (en) * 1992-04-29 1993-11-11 North Carolina State University Mos gated thyristor with remote turn-off electrode
DE4228832A1 (de) * 1992-08-29 1994-03-10 Daimler Benz Ag Feldeffekt-gesteuertes Halbleiterbauelement
EP0675545A2 (de) * 1994-04-01 1995-10-04 Fuji Electric Co. Ltd. Thyristor mit isoliertem Gate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998012749A2 (de) * 1996-09-21 1998-03-26 Vishay Semiconductor Gmbh Emittergesteuerter thyristor
WO1998012749A3 (de) * 1996-09-21 1999-11-25 Vishay Semiconductor Gmbh Emittergesteuerter thyristor
US6118141A (en) * 1996-09-21 2000-09-12 Vishay Semicondcutor Gmbh Emitter-switched thyristor

Also Published As

Publication number Publication date
US5684306A (en) 1997-11-04
JPH08274306A (ja) 1996-10-18
EP0736910A3 (de) 1997-09-03

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