WO1997023025A1 - Limiteur de surtension - Google Patents

Limiteur de surtension Download PDF

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Publication number
WO1997023025A1
WO1997023025A1 PCT/JP1995/002589 JP9502589W WO9723025A1 WO 1997023025 A1 WO1997023025 A1 WO 1997023025A1 JP 9502589 W JP9502589 W JP 9502589W WO 9723025 A1 WO9723025 A1 WO 9723025A1
Authority
WO
WIPO (PCT)
Prior art keywords
surge
absorbing element
surge absorbing
semiconductor
wire
Prior art date
Application number
PCT/JP1995/002589
Other languages
English (en)
Japanese (ja)
Inventor
Koichi Kurasawa
Sakae Koyata
Takeshi Soe
Nobuya Saruwatari
Original Assignee
Mitsubishi Materials Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corporation filed Critical Mitsubishi Materials Corporation
Priority to PCT/JP1995/002589 priority Critical patent/WO1997023025A1/fr
Priority to TW084114177A priority patent/TW281820B/zh
Publication of WO1997023025A1 publication Critical patent/WO1997023025A1/fr

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/042—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage comprising means to limit the absorbed power or indicate damaged over-voltage protection device

Definitions

  • the present invention is intended to prevent failure and malfunction of electronic devices due to induced lightning surge, AC power line contact, etc., provided in line input / output circuits of communication devices or other convenient places where surge voltage may occur. Regarding avoidance surge absorber. Background art
  • Japanese Unexamined Patent Application Publication No. Hei 3-232048 discloses an overvoltage / overcurrent protection function comprising a gap-type or micro-gap-type surge absorbing element and a low-melting metal wire provided in contact with the same.
  • a surge absorber is disclosed.
  • “gap-type or micro-gap-type surge absorbing element” will be collectively referred to as “discharge tube type surge absorbing element”.
  • FIG. 7 is an exploded perspective view of a conventional surge absorbing device for overvoltage and overcurrent protection.
  • Both terminals of a discharge tube type surge absorbing element (micro-gap type surge absorbing element in this example) 16 are connected to lead bins 11 and 13 respectively, and a low melting point metal is applied so as to surround the surge absorbing element 16.
  • a wire (here, a zinc wire) 17 is arranged, and both ends of the low-melting metal wire 17 are connected to lead pins 12 and 14, and a cover 18 is entirely covered.
  • the heat generated by the discharge is so small that a sufficient amount of heat cannot be obtained to melt the low-melting metal wire 17 in a short time, so that the interruption time may be long. is there.
  • the discharge type heat absorbing element 16 may be melted or ignited, or the outer resin case may be thermally deformed or ignited, due to the heat generated by the discharge.
  • the dimensions of the discharge type surge absorbing element 16 are substantially proportional to the surge current withstand capability, there is a limit to downsizing of the shape in order to secure a practically sufficient surge current withstand capability. For this reason, the shape of the discharge tube type surge absorbing element 16 is restricted, and it is difficult to reduce the size of a conventional surge absorbing element having an overvoltage / overcurrent protection function to a level that allows surface mounting. Disclosure of the invention
  • an object of the present invention is to provide a surge absorbing 1R device in which the risk of overheating and ignition due to spontaneous heat generation is prevented.
  • a surge absorbing device of the present invention is provided in a line, a hot-melting metal wire which is blown by a current flowing through the line, and a semiconductor-type surge absorbing element arranged between the lines. Are connected.
  • a thyristor having a PNPNP junction structure or an NPNNP junction structure can be used as the semiconductor surge absorber.
  • the hot-melt wire may be: .
  • heat-fused metal wire for example, a wire mainly made of aluminum or phosphor bronze having a diameter of 0.5 mm or less can be used.
  • the problem in the conventional example described above can be solved by using a semiconductor type surge absorbing element as the surge absorbing element and combining it with a heat-fused metal wire to form a small package. .
  • a semiconductor-type surge absorbing element particularly a two-terminal thyristor element having a PNPNP (or NPNPN) junction structure has a breakdown voltage (V bo) or more.
  • V bo breakdown voltage
  • the thyristor operates (ignites), and the terminal voltage (generally called the on-state voltage) at this time is suppressed to about 3 to 5 volts.
  • the heat generated by the surge absorbing element is proportional to the product of the terminal voltage at the time of absorbing the surge and the surge current flowing at that time. Therefore, when the same surge current flows, the lower the terminal voltage of the surge absorbing element, the lower the heat generation of the element.
  • the terminal voltage (arc voltage) during discharge is generally about 30 to 50 volts.
  • the on-voltage at the time of surge absorption is about 3 to 5 volts. Therefore, when comparing the calorific value when the same surge current flows, the semiconductor type surge absorbing element can be suppressed to about one tenth of that of the discharge tube type surge absorbing element. It is necessary to satisfy the following two points regarding the fusing characteristics of hot-melt gold wire.
  • the first item is the fusing characteristics when a relatively large overcurrent is applied, which far exceeds the current withstand capability of the semiconductor surge absorber used in combination (mainly the current withstand current with respect to AC current).
  • Instantaneous fusing when a large current is applied is required for safety.
  • safety standards that specify this required characteristic. For example, in the United States UL 497A standard (Secondary protectors for communication circuits), when applying AC 600 volts to 140 amps (effective value), It is required to blow and cut off the current before the fuse specified by the test circuit (Bussman, model name: MDQ-1.6A).
  • the Bussman fuse blows in about 0.035 seconds when this overvoltage overcurrent is applied, so the hot-melting wire used in the present invention must have the property of fusing within a shorter time. Is done.
  • the material and diameter of the heat-fused metal wire may be appropriately selected so as to satisfy the requirements of the breaking characteristics for a large current.
  • the second item is that if an overcurrent with a current value smaller than the current withstand capability of the semiconductor surge absorbing element used in combination (mainly the current withstand capability to withstand alternating current) is applied to the semiconductor
  • the type surge absorber operates normally without deteriorating the characteristics and without excessive heat generation, and it is possible to suppress overvoltage overcurrent. No need to do. Therefore, if a hot-melt wire with a current resistance equal to or greater than that of the semiconductor surge absorbing element is selected, the surge absorption of the overvoltage overcurrent protection function that can be used repeatedly for the application of a relatively small current overcurrent can be achieved. The device becomes feasible.
  • the semiconductor-type surge absorbing element When an overvoltage overcurrent that is equal to or higher than the breakover voltage of the semiconductor-type surge absorbing element is applied, the semiconductor-type surge absorbing element operates and the applied overvoltage is suppressed to the on-voltage (several volts). At the same time, a surge current flows through the thermal fusion wire. If the current value at this time is larger than the current capacity of the hot-melt metal wire, the hot-melt gold wire will melt and prevent intrusion of overcurrent into the subsequent circuit.
  • the overcurrent at this time is smaller than the current withstand capability of the hot-melt metal wire, the hot-melt gold wire does not blow, and only the semiconductor-type surge absorbing element operates to suppress the overvoltage. Protect the protected circuit from overvoltage and overcurrent. The overcurrent at this time flows into the semiconductor surge absorbing element in the operating state and the low impedance state, and therefore does not flow into the protected circuit.
  • the heat generated by the semiconductor surge absorbing element when absorbing overvoltage and overcurrent is about 1/10 of that of the discharge tube surge absorbing element.There is no risk of abnormal overheating or fire of the element itself, There is no danger of adversely affecting other mounted components or boards.
  • the use of a small semiconductor-type surge absorbing element makes it possible to reduce the overall shape, so that the mounting area can be reduced and the surface can be formed into a shape that can be surface-mounted.
  • Combining the semiconductor-type surge absorbing element described above with a hot-melt wire solves the problem of overheating and ignition due to self-heating, and also allows other parts and components mounted around It is possible to provide a small surge absorbing element for overvoltage / overcurrent protection that does not thermally affect the mounting board.
  • FIG. 1 is a configuration diagram of a first embodiment of a surge absorbing device of the present invention.
  • FIG. 2 is a circuit diagram showing a state where the surge absorbing device of the first embodiment shown in FIG. 1 is connected to a communication line.
  • FIG. 3 is a configuration diagram of a second embodiment of the surge absorbing device of the present invention.
  • FIG. 4 is a circuit diagram showing a state where the surge absorbing device of the second embodiment shown in FIG. 3 is connected to a communication line.
  • FIG. 5 is a configuration diagram of a third embodiment of the surge absorbing device of the present invention.
  • FIG. 6 is a circuit diagram showing a state where the surge absorbing device of the third embodiment shown in FIG. 5 is connected to a communication line.
  • FIG. 7 is an exploded perspective view of a conventional surge absorbing device for overvoltage and overcurrent protection.
  • FIG. 1 is a configuration diagram of a first embodiment of a surge absorbing device of the present invention.
  • a semiconductor surge absorbing element 1 having a breakover voltage (V bo) of about 300 V is used.
  • V bo breakover voltage
  • a phosphor bronze wire is used as the hot-melt wire 2 as the hot-melt wire 2.
  • a semiconductor surge absorbing element 1 (external 3 mm square, thickness 1 mm) is joined to the lead frame 3 by soldering (not shown), and a thermal bronze wire made of phosphor bronze with a diameter of 0.17 mm 2 This is soldered with a solder 4, wired from the semiconductor type surge absorbing element 1 using the connection conductor 5, and sealed with a resin 6.
  • FIG. 2 is a circuit diagram showing a state where the surge absorbing device of the first embodiment shown in FIG. 1 is connected to a communication line.
  • terminals a and b and c correspond to the terminals a, b and c in FIG.
  • the heat-fused metal wire 2 is disposed in one of the two lines 21 and 22 connected to the protected circuit 7, and the current flowing through the line 21 is Blows more.
  • the semiconductor type surge absorbing element 1 is disposed between two lines 21 and 22.
  • Table 1 shows that the conventional example shown in Fig. 7 and the first embodiment shown in Figs. 1 and 2 show AC 600 V—40 A, 2.2 A, 1 A (all The results of a test that applies three types of overvoltage and overcurrent (effective values) are shown.
  • the overvoltage overcurrent is applied by connecting the microgap type surge absorbing element and the low melting point gold wire in series, and in the case of the first embodiment, the overvoltage is applied between the terminals a and c in FIG. Overcurrent was applied.
  • the first embodiment can be significantly reduced in size, and compared with the mounting area, only one third or less of the conventional example, which is superior to high-density mounting on a board .
  • the surge absorbing element is different from the initial stage where it deteriorates.
  • the characteristics of the surge absorbing element are poor because of the characteristics of the surge absorbing element.
  • FIG. 3 shows a configuration diagram of the second embodiment. Elements that are the same as the elements of the first embodiment are indicated by the numbers assigned to FIGS. 1 and 2 with the addition of a and b.
  • This is a configuration in which two sets of constituent circuits using semiconductor surge absorbing elements 1a and 1b having the same specifications as those of the first embodiment and heat-fused gold wires 2a and 2b are configured in one package.
  • FIG. 4 shows an example of a surge protection circuit in which the surge absorber of the second embodiment is connected to a communication line.
  • the terminals a to h in the figure correspond to the terminals a to h shown in FIG. 3, respectively.
  • FIG. 5 shows a configuration diagram of the third embodiment.
  • the semiconductor type surge absorbing element 1 in which three semiconductor type surge absorbing elements having the same operating voltage as the first embodiment are formed in one semiconductor chip, and the heat-fused gold wires 2a and 2b, It is configured into individual packages.
  • FIG. 6 is an example of a surge protection circuit in which the surge absorber of the third embodiment is connected to a communication line.
  • the terminals a to h in the figure correspond to the terminals a to h shown in FIG. 5, respectively.

Landscapes

  • Emergency Protection Circuit Devices (AREA)
  • Fuses (AREA)

Abstract

On dispose ce limiteur de surtension dans des circuits d'entrée/sortie ou dans toute autre partie d'un équipement de communication où peut survenir une surtension transitoire, afin de protéger des dispositifs électroniques d'incidents ou de dysfonctionnements dus à un coup de foudre ou à un brouillage sur la ligne d'alimentation électrique CA. Ce dispositif présente une structure où un fil métallique, disposé dans une ligne et fusible du fait d'un courant s'écoulant par cette ligne, est connecté à un élément semi-conducteur limiteur de surtension disposé entre plusieurs lignes.
PCT/JP1995/002589 1995-12-18 1995-12-18 Limiteur de surtension WO1997023025A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP1995/002589 WO1997023025A1 (fr) 1995-12-18 1995-12-18 Limiteur de surtension
TW084114177A TW281820B (en) 1995-12-18 1995-12-30 Surge arrester

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1995/002589 WO1997023025A1 (fr) 1995-12-18 1995-12-18 Limiteur de surtension

Publications (1)

Publication Number Publication Date
WO1997023025A1 true WO1997023025A1 (fr) 1997-06-26

Family

ID=14126542

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1995/002589 WO1997023025A1 (fr) 1995-12-18 1995-12-18 Limiteur de surtension

Country Status (2)

Country Link
TW (1) TW281820B (fr)
WO (1) WO1997023025A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006526981A (ja) * 2003-06-04 2006-11-24 ベル−フューズ・インク 電気通信回路保護装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175533A (ja) * 1983-03-25 1984-10-04 大東通信機株式会社 小形ヒユ−ズ
JPS63930A (ja) * 1986-06-19 1988-01-05 住友電気工業株式会社 ヒユ−ズ用導体
JPH03239367A (ja) * 1990-02-16 1991-10-24 Shindengen Electric Mfg Co Ltd 両方向性２端子サイリスタ
JPH0568337A (ja) * 1991-09-09 1993-03-19 Okaya Electric Ind Co Ltd 回路開放素子及び過電圧過電流防止素子
JPH07184319A (ja) * 1993-12-24 1995-07-21 Mitsubishi Materials Corp 保護回路

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175533A (ja) * 1983-03-25 1984-10-04 大東通信機株式会社 小形ヒユ−ズ
JPS63930A (ja) * 1986-06-19 1988-01-05 住友電気工業株式会社 ヒユ−ズ用導体
JPH03239367A (ja) * 1990-02-16 1991-10-24 Shindengen Electric Mfg Co Ltd 両方向性２端子サイリスタ
JPH0568337A (ja) * 1991-09-09 1993-03-19 Okaya Electric Ind Co Ltd 回路開放素子及び過電圧過電流防止素子
JPH07184319A (ja) * 1993-12-24 1995-07-21 Mitsubishi Materials Corp 保護回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006526981A (ja) * 2003-06-04 2006-11-24 ベル−フューズ・インク 電気通信回路保護装置
JP4708338B2 (ja) * 2003-06-04 2011-06-22 ベル−フューズ・インク 電気通信回路保護装置

Also Published As

Publication number Publication date
TW281820B (en) 1996-07-21

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