WO1997016847A1 - Procede de retenue d'echantillon, procede de rotation d'echantillon, procede de traitement de fluide de surface et appareils utilises pour ces procedes - Google Patents

Procede de retenue d'echantillon, procede de rotation d'echantillon, procede de traitement de fluide de surface et appareils utilises pour ces procedes Download PDF

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Publication number
WO1997016847A1
WO1997016847A1 PCT/JP1996/003178 JP9603178W WO9716847A1 WO 1997016847 A1 WO1997016847 A1 WO 1997016847A1 JP 9603178 W JP9603178 W JP 9603178W WO 9716847 A1 WO9716847 A1 WO 9716847A1
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WIPO (PCT)
Prior art keywords
sample
fluid
guide
holding
sample holding
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PCT/JP1996/003178
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English (en)
Japanese (ja)
Inventor
Hitoshi Oka
Takao Satoh
Yoichi Takahara
Tomonori Saeki
Akio Saito
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Hitachi, Ltd.
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Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Publication of WO1997016847A1 publication Critical patent/WO1997016847A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Definitions

  • the present invention relates to a method for holding a plate-like sample in a fine contact state necessary for a manufacturing process of a thin film device, a rotating method, a fluid processing method, and an apparatus therefor, and particularly to a semiconductor manufacturing process requiring high cleanliness.
  • the present invention relates to a method for holding a disk sample, a method for rotating a disk sample, a method for treating a fluid, and a device therefor.
  • the structure of thin film devices such as semiconductors, liquid crystal displays, and magnetic disks has been miniaturized, and a high degree of cleanliness in the manufacturing process is desired in order to improve the performance of these devices and the production yield.
  • the size of the foreign substance to be removed is 0. 3 ⁇ ⁇ above
  • contamination of the metal ions is 1 0 9 atom ZCM 2 or less
  • the thickness of the oxide film formed by exposure to air It is required to be 1 nm or less.
  • samples a single-wafer processing method for processing substrate samples (hereinafter referred to as “samples”) one by one is being put into practical use.
  • samples substrate samples
  • the conventional single-wafer processing method and apparatus have the following problems.
  • a sample is fixed by a substrate rotating means, and a surface is treated by jetting a fluid onto the sample surface while mechanically rotating the sample.
  • FIG. 2 shows a case where the fluid is a liquid.
  • the mainstream wafer is 8 inches
  • the liquid flow rate toward the wafer at a wafer rotation speed of 100 rpm requires about 71 / min.
  • the insufficient flow rate is supplemented by the gas in the cleaning environment (generally air).
  • the wafer is exposed to air, and the cleaning time is wasted.
  • Japanese Patent Publication No. Hei 4-69420, Japanese Patent Laid-Open No. 61-229750, Japanese Patent Laid-Open No. 60-7444 As described in Japanese Patent Publication No. 38 (hereinafter referred to as a second conventional example), there is a method of processing a sample using the Bernoulli effect of a fluid.
  • Fig. 4 shows the principle of holding a plate-like sample by the Bernoulli effect.
  • F acts on the holding surface of the holder 4 on the sample 1 due to the ejection force. Since it spreads radially in the circumferential direction while being sandwiched between the injection hole 5 and the sample 1 and the holder 4, a pressure change occurs, and a negative pressure: P acts on the sample 1. Therefore, the sample 1 is held in a non-contact state with the holder 4 at a position where F and P are balanced.
  • the fluid 2 that causes the Bernoulli effect is used as a fluid for treating the surface of the sample 1.
  • Sample 1 can be held in the direction perpendicular to the holding surface, but not in the direction tangential to the holding surface (in the direction parallel to the holding surface). If a stopper, a protrusion, a side wall, etc. are provided to prevent this, the following problems will occur.
  • the processing method using the Bernoulli effect does not solve the problem of the displacement of the sample in the tangential direction and has not been realized.
  • cleaning processing
  • one mechanism such as cleaning I (processing), cleaning 2 (processing), and cleaning 3 (processing)
  • a large spray force is required when the cleaning liquid is switched.
  • it has not been realized because of fluctuations.
  • the gas flow velocity is less than about half of the sound velocity (173 m / sec)
  • the gas can be handled as an incompressible fluid. Is well known in the field of hydrodynamics.
  • An object of the present invention is to solve the above-mentioned problems of the prior art, and a first object is to provide a method for holding a tangentially stable sample using the Bernoulli effect.
  • the second object is a method for stably rotating a sample held using the Bernoulli effect, and the third object is a sample holding method according to the present invention and a plate-like sample surface using the sample rotating method.
  • a fourth object of the present invention is to provide an apparatus for treating a surface of a plate-like sample using a sample holding method and a sample rotating method according to the present invention. Disclosure of the invention
  • the present invention solves the above objects by the following technical means.
  • the first object is to provide a sample guide for holding the sample, which is mechanically separated from the sample holding surface, in the direction in which the sample is to be held, and to allow a fluid to flow between the sample and the sample holding surface. This is achieved by a sample holding method characterized in that the sample is held in contact with the sample guide by utilizing the Bernoulli effect caused by the sample, and the sample position shift in the tangential direction as well as the normal direction of the sample holding surface is suppressed.
  • the second object is attained by a sample rotating method characterized by rotating the sample together with rotation of the sample guide in the sample holding method for achieving the first object.
  • the third object is to select a fluid to flow to generate the Bernoulli effect according to the treatment to be performed on the sample to be held, support the sample with a sample guide, and treat the sample surface.
  • the fourth object is to provide a sample holding means on which the sample holding surface is formed, and a fluid for flowing between the sample holding surface and the sample to generate a Bernoulli effect and for processing the sample surface.
  • a fluid supply means for supplying the fluid a fluid supply means for supplying the fluid for floating the fluid guide, and a fluid supply means for supplying the fluid for floating the fluid guide.
  • FIG. 1 is an explanatory diagram for explaining the flow of a fluid when a plate-like sample is rotated
  • Fig. 2 is a diagram for explaining the flow rate required to form the fluid flow when the wafer is rotated.
  • FIG. 3 is an explanatory view for explaining a flow of a fluid when a plate-shaped sample is rotated while being sealed with a side wall
  • FIG. 4 is a view for explaining a Bernoulli holding.
  • FIG. 5 is an explanatory diagram for explaining the principle
  • FIG. 5 is an explanatory diagram for explaining the relationship between forces acting on a sample when a Bernoulli holder is used as the upper and lower holders.
  • Fig. 7 shows the relationship between each force acting on the sample and the distance between the upper and lower holders.
  • FIG. 7 shows the results when the sample is contacted and held when the Bernoulli holder is used as the lower holder.
  • FIG. 8 is an explanatory view for explaining the relationship between the forces acting on the upper and lower holders.
  • Fig. 9 is an explanatory view for explaining the relationship between the forces acting when the sample is held in contact with the sample, and Fig. 9 shows the relationship between each force acting on the sample and the distance between the upper and lower holders.
  • FIG. 10 is a cross-sectional view for explaining the structure of three embodiments of a sample guide for contacting and holding a sample
  • FIG. 11 is a view for explaining the principle of rotating the sample.
  • FIG. 12 is an exploded view of the components of FIG. 12.
  • FIG. 12 is a cross-sectional view for explaining the principle of rotating the sample.
  • FIG. 13 is an upper holder, a sample guide, and a sample guide according to the present invention.
  • FIG. 14 is an exploded view of components of one embodiment, such as a plate and a lower holder
  • FIG. 14 is a cross-sectional view showing a main part configuration of an upper holder according to the present invention
  • FIG. 17 is a plan view showing a main part configuration of the sample guide according to the present invention.
  • FIG. 19 is a cross-sectional view illustrating a configuration of a main part of the lower holder according to the present invention.
  • FIG. FIG. 2 is an explanatory diagram showing a main configuration of an example enabling fluid treatment according to the present invention.
  • FIG. 21 is a diagram showing a removal rate of silicon powder
  • FIG. 23 is a diagram showing the ion removal rate.
  • FIG. 23 is a development view of components of one embodiment, such as an upper holder, a sample guide, a sample guide ⁇ , a turntable, and a lower holder according to the present invention.
  • FIG. 24 is a cross-sectional view showing a configuration of a main part of the lower holder according to the present invention.
  • FIG. FIG. 2 is an explanatory diagram showing a main configuration of an example enabling fluid treatment according to the present invention.
  • FIG. 21 is a diagram showing a removal rate of silicon powder
  • FIG. 23 is a diagram showing the ion removal rate.
  • FIG. 23 is
  • FIG. 26 is a plan view showing an example of the arrangement of the rotating table
  • FIG. 26 is a cross-sectional view after assembling a rotating table lid, a sample guide, a sample guide plate, and a rotating table.
  • FIG. 28 is a cross-sectional view showing a configuration of a main part of the sample guide according to the present invention.
  • FIG. 28 is a plan view showing an example of an arrangement of fluid injection holes that levitate and rotate the sample guide according to the present invention;
  • FIG. 29 is an explanatory view showing a meniscus when the upper and lower holders are used,
  • FIG. 30 is a diagram showing a suppressing force when the upper and lower holders are used, and
  • FIG. FIG. 3 is an explanatory diagram showing a main configuration of an embodiment that enables fluid processing according to the present invention.
  • the Bernoulli effect suction force: P ;, P 2 becomes zero. That is, if the distance between the holders is within about 5 mm, the sample 1 is held in the normal direction of the holding surface.
  • Fig. 7 shows a cross-sectional view of the case with only the lower holder, showing the direction and type of the force applied to sample 1.
  • a sample guide 8 with a height of about 5 mm or less from the holding surface is fixed on the upper surface of the lower holder 4, and when fluid is ejected from the injection hole 5, the force 1: F: and P : act on the sample 1, Fixed to sample guide 8 with force: G.
  • Equation 2 The equilibrium of all forces is given by Equation 2 below.
  • FIG. 8 is a cross-sectional view when the upper and lower holders are used, and shows the direction and type of force applied to the sample 1.
  • Upper surface of lower holder 4 When upper holder 6 is brought within approximately 5 mm and fluid is ejected from injection hole 7, force 1: F 2 and P 2 act on sample 1. The balance of all forces is given by Equation 3 below.
  • FIGS. 10 (a) to 10 (c) are cross-sectional views showing three examples of the sample guide 8 used in the present invention.
  • Fig. 10 (a) shows the structure of the sample guide 8 that simply supports the sample 1 from below, and the force that suppresses the displacement of the sample 1 in the tangential direction with respect to the holding surface.
  • the fixing force is the frictional force proportional to G between the materials constituting sample 1 and sample guide 8.
  • FIG. 10 (b) shows an L-shaped sample guide 8, which physically suppresses the displacement in addition to the frictional force.
  • FIG. 10 (c) shows the sample guide 8 tapered so that the distance from the holding surface decreases toward the center of the sample 1.
  • the fixing force is G s i ⁇ c 0 s 6, and this force suppresses displacement in the tangential direction.
  • the tapered sample guide 8 facilitates the positioning of the sample 1 with respect to the holder 4 and is more useful. It is not necessary to provide these sample guides 8 on the entire circumference of the holder, and a plurality of these sample guides may be arranged on the circumference so that the fluid can flow out of the holder.
  • the Bernoulli effect acting on a sample is reduced.
  • the sample is held in the normal direction of the holding surface, and is also held in the tangential direction of the holding surface by a simple sample guide. Therefore, even if the ejection force fluctuates due to the vibration, pulsation, pressure change, etc. of the pump that ejects the fluid, the sample is not displaced, and as a result, the sample can be stably held.
  • the surface of the sample is treated while the sample is sandwiched between the upper and lower holders at a small interval, preventing contamination from outside the holder and eliminating the need for re-contamination. To achieve.
  • FIG. 11 is a development view of the components
  • FIG. 12 is a cross-sectional view thereof.
  • sample guide plate 9 in which a sample guide 8 is fixed on a lower holder 4, a sample 1, and an upper holder 6.
  • the sample guide plate 9 is mechanically separated from the upper and lower holders 4 and 6, and is independent.
  • the sample 1 is fixed to the sample guide plate 9 through the sample guide 8 by the Bernoulli effect generated by the fluid ejected from the fluid injection hole 5-1.
  • the sample guide plate 9 floats above the lower holder 4, and becomes completely unrelated to the lower holder 4 mechanically. Therefore, if the injection hole 5-2 injects the fluid in the desired rotation direction of the sample 1 with an inclination to the holding surface, the sample guide plate 9 is lifted up from the lower holder 4 by the action of the injection force. And rotate.
  • FIG. 13 is a development view of components such as the upper holder 6, the sample 1, the sample guide 8, the sample guide plate 9, and the lower holder 4 used in the present embodiment.
  • FIG. 14 shows a detailed sectional view of the upper holder 6.
  • the upper holder 6 includes an upper spray plate 10 for spraying a fluid, a 0-ring 11 for separating a fluid flow path, and an upper supply plate 12.
  • the upper spray plate 10 is made of polytetrafluoroethylene (hereinafter, referred to as PTFE) having a diameter of 170 mm and a thickness of 20 mm, and the surface facing the sample 1 has a surface as shown in FIG.
  • PTFE polytetrafluoroethylene
  • a hole of approximately the same size is given to the rotation center of the sample 1 and the hole is drilled at a position where the sum of the vectors of the injection force is almost zero.
  • the arrow in FIG. 15 indicates that the hole is drilled obliquely at an angle of 45 with the holding surface in the direction of the arrow (the same applies hereinafter).
  • the Bernoulli effect that occurs between the sample 1 and the upper holder 6 is caused by ejecting a fluid from five orifices 7-1 having a diameter of 1 mm.
  • the injection hole 7-2 with a diameter of 1 mm is used mainly for drying sample 1 to scatter water droplets attached to the contact point between sample 1 and sample guide 8.
  • Ring 1 1 is made of tetrafluoroethylene perfluoroalkyl vinyl ether copolymer (hereinafter referred to as PFA) and has a wire diameter of 5.7 mm. Diameter: 49.6 mm and 19.6 mm.
  • PFA tetrafluoroethylene perfluoroalkyl vinyl ether copolymer
  • the upper supply plate 12 is made of PTFE having a diameter of 170 mm and a thickness of 10 mm, and has a supply hole 13 of 1 mm in diameter for supplying fluid.
  • the upper spray plate 10 and the upper supply plate 12 are fixed to each other with a 5-mm diameter bolt made of polyester ether ketone (hereinafter referred to as PEEK) with the 0-ring 11 interposed therebetween.
  • PEEK polyester ether ketone
  • FIG. 16 is a cross-sectional view of the sample guide plate 9 to which the sample guide 8 is fixed
  • FIG. 17 is a plan view thereof.
  • the sample guide 8 is L-shaped with a total height of 4 mm and a sample holding height of 3 mm, and is made of PEEK.
  • Sample guide No. 9 is made of PTFE having an outer diameter of 144 mm, an inner diameter of 125 mm and a semicircular cross section of 20 mm in diameter.
  • FIG. 18 shows a detailed sectional view of the lower holder 4.
  • the lower holder 4 is composed of a lower ejection plate 14 for supplying a fluid, a 0-ring 11 for separating a fluid flow path, and a lower ejection plate 15.
  • the lower spray plate 14 is made of PTFE having a diameter of 170 mm and a thickness of 30 mm, and the surface facing the sample 1 has a half of a diameter of 20.2 mm for accommodating the sample guide plate 9.
  • a circular groove is dug.
  • the surface of the surface, as shown in Fig. 19, is a fluid injection hole 5 for generating the Bernoulli effect, a floating hole 17 for floating the sample guide plate 9, and a rotating and holding sample guide plate 9.
  • a rotating hole 18 that is formed at an angle of 45 ° with respect to the surface and a brake on the rotating sample guide plate 9 at an angle of 45 ° with respect to the holding surface.
  • Braking holes 19 are formed as holes having a diameter of 1 mm. These piercing angles are effective in the range of 80 to 180 force ⁇ 45. Is desirable.
  • Ring 11 is made of PFA and has a wire diameter of 5.7 mm and an inner diameter of 49.6 mm, 69.6 mm, 89.6 mm, and 109.6 mm.
  • the lower supply plate 15 is made of PEEK with a diameter: I 70 mm and a thickness: 10 mm.
  • the supply holes 16-1, 16-2, 16-3, 16-4 for supplying fluid are provided. Diameter: 1 mm perforated.
  • FIG. 20 conceptually illustrates a fluid treatment method and a fluid treatment apparatus for treating sample 1 by injecting various fluids using the upper holder 6, the sample guide plate 9, and the lower holder 4. This is shown in FIG.
  • the solenoid valves all start from a closed state.
  • the solenoid valves 21 to 6 are closed, the solenoid valves 21 to 9 are opened, and the treatment liquid in the treatment liquid tank II 23 is injected at 3 ⁇ / m ⁇ ⁇ , and the sample 1 The processing on the back of is started.
  • the treatment liquid of 23 is injected at a flow rate of 21 / in, and the treatment of the surface of sample 1 is started.
  • the wafer is a Shin-Etsu Chemical 6 inch wafer with a diameter: 150 mm, a thickness: 0.55 mm, a weight: 21.4 g, and a resistivity: 6.01 to 12.0 ⁇ cm.
  • the number of adhered silicon powder before and after the above treatment was measured using a laser surface inspection device manufactured by Hitachi Electronics Engineering, and the removal rate (%) was determined.
  • the wafer was immersed in an aqueous solution obtained by diluting a desired standard solution for atomic absorption analysis for 30 minutes to prepare a wafer contaminated with various metal ions.
  • a desired standard solution for atomic absorption analysis for 30 minutes to prepare a wafer contaminated with various metal ions.
  • the number of adhering metal ions before and after the above treatment was measured using a total reflection X-ray fluorescence analyzer made by Technos: TREX610, and the removal rate (%) was determined.
  • the experimental results obtained under the above conditions are shown in Fig. 22.
  • the processing was at a high speed equal to or higher than that of the conventional rotary surface treatment equipment.
  • a stepped polysilicon wafer was used.
  • the drying spot generated when the wafer is dried is called a watermark.
  • the main cause is that oxygen in the air dissolves in water droplets adhering to the wafer, oxidizes and dissolves the silicon of the wafer, and the dissolved matter remains as a dry residue.
  • This water mark has a diameter of about 1 to several 10 ⁇ m, and is observed at a magnification of 10,000 to 80,000 using an electron microscope S-7100 manufactured by Hitachi, Ltd. The number of occurrences was measured.
  • FIG. 23 shows the upper and lower holders 4 and 6 used in the present embodiment, the sample 1, the turntable lid 2, the sample guide 8, the sample guide plate 9, the turntable 25 and other components.
  • the structure of the upper holder 6 is the same as in FIGS. 14 and 15 except that the diameter thereof is set to 154 mm.
  • FIG. 24 shows a detailed sectional view of the lower holder 4.
  • the lower holder 4 includes a lower jet plate 14 for jetting a fluid, a 0-ring 1 i for separating a fluid flow path, and a lower feed plate 15.
  • the lower spray plate has a diameter of 154 mm and has almost the same diameter as the 6-inch wafer used as sample 1, and a thickness of 301: 111? Ding?
  • An injection hole 5-1 with a diameter of 1.2 mm is drilled at a position where it is almost zero.
  • a storage groove 26 for storing the sample guide 8 shown in FIG. 26 described later which has a width of 2 mm, a length of 5 mm, and a depth of 15 mm, is cut.
  • An injection hole 5-2 with a diameter of 1 mm that scatters water droplets adhering to the contact point between the sample 1 and the sample guide 8 is drilled near the storage groove 26.
  • FIG. 26 is a cross-sectional view after assembling the turntable lid 24, the sample guide 8, the sample guide plate 9, and the turntable 25.
  • the turntable lid 24 and the turntable 25 are connected by a port, and the sample guide plate 9 is stored in the gap therebetween.
  • the sample guide plate 9 floats from the turntable 25.
  • the rotation hole 18 has a hole with a diameter of 1 mm, which is oblique to the direction in which the sample guide plate 9 is rotated.
  • the braking hole 19 is formed with a hole having a diameter of 1 mm, which is oblique in the opposite direction to the rotating hole 18 in order to brake the rotation of the rotating sample guide plate 9.
  • the injection angles of the rotating hole 18 and the braking hole 19 are effective in the opposite directions of 10 to 80 °, but preferably 45 °.
  • the rotating shaft hole 27 is perforated with a hole having a diameter of 1 mm, and holds the rotating sample guide plate 9 in a non-contact manner with the rotating shaft of the rotating base 25 by jetting a fluid.
  • the turntable lid 24 is made of PE EK having a thickness of 3 mm.
  • the sample guide plate 9 is made of PEEK with a thickness of 2 Omm.
  • FIG. 27 shows an example of the positions of the injection holes for ejecting the fluid of the turntable 25 and the ejection direction.
  • FIG. 1 The operation of storing the sample guide 8 in the storage groove 26 of the lower holder 4 and exposing it from the storage groove 26 is shown in FIG. That is, the sample guide 8 is stored in the storage groove 26 by the vertical movement of the turntable 25 or the lower holder 4.
  • the sample guide 8 is made to appear and the sample 1 is contacted and processed.
  • FIG. 30 shows an example of the result of measuring the suppression force.
  • the measurement was performed in the state shown in Fig. 29.
  • the sample used was a 5-inch wafer with a diameter of 125 mm, and the upper and lower holders were made of PTFE with a diameter of 110 to 135 mm, and the distance between the upper and lower holders was measured. : 1.76 mm, liquid: water, the above-mentioned restraining force was obtained by connecting the wafer and the electronic balance with a thread.
  • a large restraining force works with the holder size within the sample dimensions of -8 mm and +4 mm.
  • the fluid is a liquid
  • the holder size is within the range of 18 mm and 14 mm with respect to the sample size, the sample can be held and processed without contact.
  • the sample guide prevents the tangential displacement with respect to the sample holding surface by the sample guide.
  • the treatment with the liquid in the stored state of the sample guide 8 can be performed. It is possible to perform the treatment with gas in the appearance state of, and to realize the highest possible clean treatment.
  • the turntable 25 of the sample guide plate 9 is moved upward, the sample guide 8 is made to appear, and the sample 1 is placed on the sample guide 8.
  • the turntable 25 is moved downward, and the distance between the sample 1 and the holding surface of the lower holder 4 is set to about 3 mm.
  • the solenoid valves 30 — 3 and 30 — 4 are opened, and an inert gas is injected at a flow rate of 30 I in to cause the Bernoulli effect between the upper holder 6 and the sample 1.
  • Open the solenoid valves 3 2-1, 3 2-2, 3 2-3 inject the air in the high-pressure air tank 31 at a flow rate of 61 / min, and move the sample guide plate 9 from the turntable 25. While floating, rotate the sample guide plate 9 at about 100 rpm.
  • the solenoid valves 30-1 are closed and the solenoid valves 30-6 are opened, the processing liquid in the processing liquid tank I22 is injected at a flow rate of 21 / in, and processing on the back side of the sample 1 is started. You.
  • the electromagnetic valves 30-3 are closed, the electromagnetic valves 29-1 and 29-2 are opened, and the inert gas is passed through the processing gas tank 28 using the inert gas as the carrier gas to process the desired component gas. Create body and treat sample 1 surface. After the treatment for a predetermined time, the solenoid valves 29-1 and 29-2 are closed, and the solenoid valves 30-3 are opened to inject the inert gas to completely remove the treated gas. After that, it shifts to the injection of the processing solution in the following processing solution tank # 23.
  • the solenoid valves 30 to 5 are closed and the solenoid valves 30 to 7 are opened, and the treatment liquid in the treatment liquid tank ⁇ 23 is injected at a flow rate of 21 / min. Is started.
  • solenoid valves 30-7 are closed, solenoid valves 30-1 are opened, and an inert gas is injected at a flow rate of 301 / min to start drying the back surface of sample 1. Is done.
  • solenoid valves 30-8 With solenoid valves 30-8 closed, solenoid valves 30-3 and 30-9 opened, an inert gas is injected at a flow rate of 301 Zin, and the surface of sample 1 starts drying. .
  • FIG. 31 parts such as a fixing and moving mechanism for the holder, a fluid temperature controller, and a fluid flow controller, which are not related to the essence of the present invention, are omitted.
  • the fluid ejected by the lower holder 4 is heated to a desired temperature by the temperature control 33, and the processing temperature of the sample 1 can be adjusted by transmitting the temperature of the fluid from the back surface of the sample.
  • the first processing fluid is liquid
  • the second processing fluid is liquid
  • the third processing fluid is gas
  • Example 1> [IV] The same as in the evaluation of the silicon powder removal rate.
  • Example 4> An experiment was performed using the same fluid treatment method and apparatus as in Example 4>.
  • the first processing fluid is a gas
  • the second processing fluid is a liquid
  • the third processing fluid is a gas.
  • Wafers are the same as in Example 1> heat-treated at 950 in oxygen containing 1% water vapor for 54 minutes to form a 180 nm thermal oxide film on the wafer surface was used.
  • Nitrogen gas is flowed into liquid hydrofluoric anhydride to create a gas containing 2% hydrofluoric acid gas and water vapor. Temperature: room temperature.
  • Processing liquid tank Processing was performed for 120 seconds with the processing fluid in ⁇ .
  • the thickness of the thermal oxide film was measured with an ellipsometer, and the processing speed (etching speed) was determined from the values before and after the processing. After the treatment, hydrofluoric acid adhering to the wafer surface was measured by the concentrated ion electrode method.
  • Example 4> An experiment was conducted using the same fluid treatment method and apparatus as in Example 4>. Note that the first processing fluid is a gas, The second processing fluid is a liquid, and the third processing fluid is a gas.
  • Example 2 Wafer Wafer Same as in Example 1), using a gas containing 3% disilane and phosphine, and a 150-nm doped poly-silicon layer on the wafer surface by aging CVD at 50 ° C. A film was formed.
  • Processing was performed for 120 seconds with the processing fluid in the processing liquid tank II.
  • the thickness of the doped polysilicon film was measured with an ellipsometer, and the processing rate (etching rate) was determined from the values before and after the processing. After the treatment, hydrofluoric acid adhering to the wafer surface was measured by the concentrated ion electrode method.
  • the doped polysilicon film was etched at a rate of 250 nm / min by the processing gas. Furthermore, in the etching by the process gases from adhering fluorine atom about 5 X 1 0 13 atoms Ji m 2 on the wafer surface, the processing of the processing liquid tank 11, from about 1 0 1 1 It was found that it can be reduced to atoms / cm 2 .
  • One mechanism enables continuous gas-liquid-gas processing.
  • chlorine trifluoride is a very corrosive compound. ⁇ The apparatus of the present invention was not corroded at all.
  • the rotating table of the sample guide may be arranged on the left and right of the holder, or may be arranged on the upper holder by reversing the upper and lower holders shown in FIG. Unless corrosive fluids are used, or if a high degree of cleanliness is not required, the rotation of the sample guide may be driven by a drive motor rather than by spraying the fluid.
  • a sample guide for holding the sample is provided in the direction in which the sample is to be held and is mechanically separated from the sample holding surface, and a fluid is caused to flow between the sample and the sample holding surface.
  • a method and apparatus for holding a sample wherein the sample is held in contact with the sample guide using the Bernoulli effect, and the displacement of the sample in the tangential direction is suppressed together with the normal direction of the sample holding surface. Can be provided.
  • sample rotating method and apparatus wherein the sample guide is mechanically separated from the sample holding surface, and the sample is rotated together with the rotation of the sample guide.
  • a fluid treatment method and apparatus characterized by the following can be provided.
  • the present invention is extremely effective when used particularly in a semiconductor manufacturing process requiring cleanliness.

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Abstract

Afin d'obtenir un appareil de traitement de fluide de petites dimensions et de grande propreté en retenant de manière stable un échantillon par des guides d'un dispositif de retenue de Bernoulli et en faisant tourner l'échantillon à l'aide d'un jet de fluide, des guides sont formés de façon à être séparés mécaniquement d'une surface de retenue de l'échantillon. Puis on maintient l'échantillon en contact en projetant un fluide sur celui-ci, les guides de l'échantillon tournant, sans être en contact, sous l'action du jet de fluide. Une pluralité de sources d'alimentation en fluide sont raccordées au dispositif de retenue, et au moins un type de fluide est envoyé sur l'échantillon. Puisque les guides (8) empêchent le déplacement tangentiel de l'échantillon (1), un traitement continu, à l'aide de différents types de fluides qui ne sont pas en contact avec l'air, peut être effectué par un mécanisme unique. Puisque ces guides (8) tournent sous l'action d'un jet de fluide, il n'est pas nécessaire d'avoir recours à un moteur d'entraînement et à certains types de pièces du mécanisme, et on peut ainsi réduire considérablement les dimensions de l'appareil.
PCT/JP1996/003178 1995-10-31 1996-10-30 Procede de retenue d'echantillon, procede de rotation d'echantillon, procede de traitement de fluide de surface et appareils utilises pour ces procedes WO1997016847A1 (fr)

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JP7/283071 1995-10-31
JP28307195A JP3440655B2 (ja) 1995-10-31 1995-10-31 試料保持方法、試料回転方法及び試料表面の流体処理方法並びにそれらの装置

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WO1997016847A1 true WO1997016847A1 (fr) 1997-05-09

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WO1999046806A1 (fr) * 1998-03-11 1999-09-16 Trusi Technologies, Llc supports d'articles et procédés de support
DE19901291A1 (de) * 1999-01-15 2000-08-31 Sez Semiconduct Equip Zubehoer Vorrichtung zur Ätzbehandlung eines scheibenförmigen Gegenstandes
US6168697B1 (en) 1998-03-10 2001-01-02 Trusi Technologies Llc Holders suitable to hold articles during processing and article processing methods
US6449428B2 (en) * 1998-12-11 2002-09-10 Mattson Technology Corp. Gas driven rotating susceptor for rapid thermal processing (RTP) system
SG93257A1 (en) * 1999-09-09 2002-12-17 Mimasu Semiconductor Ind Co Wafer rotary holding apparatus and wafer surface treatment apparatus with waste liquid recovery mechanism
US6638004B2 (en) 2001-07-13 2003-10-28 Tru-Si Technologies, Inc. Article holders and article positioning methods
US20130219693A1 (en) * 2012-02-23 2013-08-29 Beijing Sevenstar Electronics Co.,Ltd. Device for holding disk-shaped articles and method thereof
US10410907B2 (en) * 2014-09-30 2019-09-10 Kaneka Corporation Sample-holding device, method for manufacturing solar cell, and method for manufacturing solar cell module
TWI732695B (zh) * 2019-12-25 2021-07-01 日商Ｓｕｍｃｏ股份有限公司 往研磨裝置傳送半導體晶圓的方法及半導體晶圓的製造方法

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JP2000260739A (ja) * 1999-03-11 2000-09-22 Kokusai Electric Co Ltd 基板処理装置および基板処理方法
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JP3846697B2 (ja) * 2001-08-14 2006-11-15 大日本スクリーン製造株式会社 基板処理装置
JP4043019B2 (ja) * 2002-04-26 2008-02-06 大日本スクリーン製造株式会社 基板処理装置
JP4177068B2 (ja) * 2002-10-08 2008-11-05 葵精機株式会社 基板処理装置およびその製造方法
US20050151282A1 (en) * 2004-01-13 2005-07-14 Harper Bruce M. Workpiece handler and alignment assembly
JP4544634B2 (ja) * 2006-06-02 2010-09-15 大日本スクリーン製造株式会社 基板支持装置
US7907289B2 (en) 2007-09-13 2011-03-15 Horiba, Ltd. Substrate measuring stage
JP5208666B2 (ja) * 2008-10-10 2013-06-12 大日本スクリーン製造株式会社 基板処理装置
JP5553592B2 (ja) * 2009-12-15 2014-07-16 日本空圧システム株式会社 保持具
JP5671405B2 (ja) * 2011-04-26 2015-02-18 パナソニックＩｐマネジメント株式会社 基板のエッチング方法
JP2013030654A (ja) * 2011-07-29 2013-02-07 Kimihiro Eguchi 基板保持機構、半導体基板の分離処理装置および半導体基板の分離方法
JP5006464B1 (ja) * 2011-10-25 2012-08-22 ミクロ技研株式会社 基板処理装置及び基板処理方法
JP5657039B2 (ja) * 2013-01-28 2015-01-21 株式会社日立ハイテクノロジーズ 試料搭載装置
JP6716460B2 (ja) 2014-09-30 2020-07-01 株式会社カネカ 試料移載システム及び太陽電池の製造方法
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6168697B1 (en) 1998-03-10 2001-01-02 Trusi Technologies Llc Holders suitable to hold articles during processing and article processing methods
WO1999046806A1 (fr) * 1998-03-11 1999-09-16 Trusi Technologies, Llc supports d'articles et procédés de support
US6095582A (en) * 1998-03-11 2000-08-01 Trusi Technologies, Llc Article holders and holding methods
US6449428B2 (en) * 1998-12-11 2002-09-10 Mattson Technology Corp. Gas driven rotating susceptor for rapid thermal processing (RTP) system
DE19901291A1 (de) * 1999-01-15 2000-08-31 Sez Semiconduct Equip Zubehoer Vorrichtung zur Ätzbehandlung eines scheibenförmigen Gegenstandes
DE19901291C2 (de) * 1999-01-15 2002-04-18 Sez Semiconduct Equip Zubehoer Vorrichtung zur Ätzbehandlung eines scheibenförmigen Gegenstandes
SG93257A1 (en) * 1999-09-09 2002-12-17 Mimasu Semiconductor Ind Co Wafer rotary holding apparatus and wafer surface treatment apparatus with waste liquid recovery mechanism
US6638004B2 (en) 2001-07-13 2003-10-28 Tru-Si Technologies, Inc. Article holders and article positioning methods
US20130219693A1 (en) * 2012-02-23 2013-08-29 Beijing Sevenstar Electronics Co.,Ltd. Device for holding disk-shaped articles and method thereof
US9038262B2 (en) * 2012-02-23 2015-05-26 Beijing Sevenstar Electronics Co., Ltd. Device for holding disk-shaped articles and method thereof
US10410907B2 (en) * 2014-09-30 2019-09-10 Kaneka Corporation Sample-holding device, method for manufacturing solar cell, and method for manufacturing solar cell module
TWI732695B (zh) * 2019-12-25 2021-07-01 日商Ｓｕｍｃｏ股份有限公司 往研磨裝置傳送半導體晶圓的方法及半導體晶圓的製造方法

Also Published As

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JPH09129587A (ja) 1997-05-16
JP3440655B2 (ja) 2003-08-25

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