WO1995015407A1 - Magneto-optical alloy sputter targets - Google Patents

Magneto-optical alloy sputter targets Download PDF

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Publication number
WO1995015407A1
WO1995015407A1 PCT/US1994/013401 US9413401W WO9515407A1 WO 1995015407 A1 WO1995015407 A1 WO 1995015407A1 US 9413401 W US9413401 W US 9413401W WO 9515407 A1 WO9515407 A1 WO 9515407A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
rare earth
transition metal
alloy
intermetallic compound
Prior art date
Application number
PCT/US1994/013401
Other languages
English (en)
French (fr)
Inventor
Daniel R. Marx
Original Assignee
Materials Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corporation filed Critical Materials Research Corporation
Priority to CA002174433A priority Critical patent/CA2174433C/en
Priority to KR1019960702608A priority patent/KR100351778B1/ko
Priority to DE69425833T priority patent/DE69425833T2/de
Priority to JP51566395A priority patent/JP3662251B2/ja
Priority to AU12110/95A priority patent/AU1211095A/en
Priority to EP95903136A priority patent/EP0730669B1/en
Publication of WO1995015407A1 publication Critical patent/WO1995015407A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10

Definitions

  • Magneto-optical (MO) recording media are formed by sputtering a thin layer or film composed of rare earth elements and transition metals in a desired composition onto a substrate such as a glass or plastic wafer or disc.
  • the target structure may include various transition metal/transition metal alloys, alloys of a transition metal and a corrosion resistance improving element, or a combination of both. It has been discovered that by limiting the amount of rare earth transition metal intermetallic compound present in its strucmre, the target is more likely to consistently sputter MO films with improved properties.
  • the strucmre of the present target is preferably substantially free of any unalloyed or elemental transition metal, in order to limit the formation of such intermetallic compounds during the target production process. Unalloyed transition metals, such as Fe, are very reactive and tend to form intermetallic compounds with rare earth elements, such as Tb, during production of the target.
  • This rare earth enrichment of the target may be accomplished by making additions of substantially elemental rare earth (RE) particles to the basic powder blend of the present invention, thereby increasing the rare earth content of the target strucmre, reducing the RE/TM intermetallic compound content of the target and increasing the rare earth yield in the resulting MO film.
  • RE/RE rare earth rare earth alloy particles
  • alloys containing substantially only rare earth elements may be used instead of or along with the elemental RE particles to produce such an effect.
  • Figure 1 is a graph of the coercivity across MO alloy films sputtered from Examples 1, 2 and 3;
  • Figure 5 is a graph of the Tb content across MO alloy films sputtered from the targets of Examples 6 and 7 as measured by RBS;
  • Figure 6 is a graph of the coercivity across portions of MO alloy films sputtered from the targets of Examples 8, 9, 10 and 11; and
  • hexane is preferably added to the powdered constiments, in a drop-wise fashion, before blending. Satisfactory results have been obtained by using two milliliters of hexane for each kilogram of total powder. It is believed that other high molecular weight alkanes, such as heptane and possibly octane, may also be used to aid in the blending process. It is best to choose the composition of each powdered constiment to enable blending of various amounts of the constiments into a range of target compositions (see
  • the yield of elemental rare earth metal deposited onto the substrate during the sputter coating process, and thereby properties of the resulting MO film is improved.
  • any RE/RE alloy powder used should have about the same oxygen content. It is also suggested that the content of the eutectic powder be less than about 1,000 ppm and preferably less than about 800 ppm, and the content of the transition metal alloy powder be less than about 800 ppm and preferably less than about 500 ppm.
  • the hot pressing conditions for each example can be found in Table II.
  • the pressing temperamre and time at temperamre will likely depend upon the particular type of press used.
  • MO films sputtered from these exemplary targets were deposited on 150 mm diameter oxide coated silicon wafers at 3 kW and 3 mTorr using a static deposition sputtering system, the strucmre and operation of which forms no part of this invention and therefore is also not discussed in detail herein. It is believed that satisfactory results could be obtained using any such sputtering system by following well-known sputtering techniques for optimizing target performance and the properties of the resulting MO film.
  • Each of the resulting MO wafers included an Al reflective layer and two layers of Si 3 N 4 sandwiching the MO alloy layer as is commonly done.
  • MO alloy targets were compared to illustrate the effect that the duration of the pressing operation at temperamre has on target performance.
  • Each target was formed using a uniaxial inert gas hot press, with inductive heating.
  • the base line of 600°C was chosen as a temperamre above which volume diffusion and intermetallic compound formation rates were believed to become significant.
  • the MO films were deposited onto 150 mm diameter oxide-coated silicon wafers at 3 kW and 3 mTorr using a static deposition sputtering system. As can be seen from Figures
  • MO films were each sputtered onto a 5.25 in. (133.35 mm) diameter outgassed polycarbonate disc at 2 kW and 3 mTorr using a scanning pallet sputtering system. Eliminating the elemental Fe powder from the powder blend resulted in an increase in the film coercivity and a corresponding increase in the film Tb content (see Tables IVa and b, target Examples 9 and 10). Introducing elemental
  • the powder blend preferably has greater than about 50 weight percent of its rare earth element content added as an elemental powder with the balance added as a eutectic, or comparable, finely mixed alloy powder, and the transition metal solutes added as an alloy powder. It is believed that for the particular materials used in the preceding examples, and for similar materials, acceptable targets with improved performance may be obtained by using a time, temperamre and pressure ranging from about 5 hours at about 400°C, under a pressure of at least about 30

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
PCT/US1994/013401 1993-12-02 1994-11-22 Magneto-optical alloy sputter targets WO1995015407A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CA002174433A CA2174433C (en) 1993-12-02 1994-11-22 Magneto-optical alloy sputter targets
KR1019960702608A KR100351778B1 (ko) 1993-12-02 1994-11-22 자기광학기록매체제조용합금타깃
DE69425833T DE69425833T2 (de) 1993-12-02 1994-11-22 Sputter-targets aus magneto-optischer legierung
JP51566395A JP3662251B2 (ja) 1993-12-02 1994-11-22 磁気光学合金製のスパッターターゲット
AU12110/95A AU1211095A (en) 1993-12-02 1994-11-22 Magneto-optical alloy sputter targets
EP95903136A EP0730669B1 (en) 1993-12-02 1994-11-22 Magneto-optical alloy sputter targets

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/161,143 US5439500A (en) 1993-12-02 1993-12-02 Magneto-optical alloy sputter targets
US08/161,143 1993-12-02

Publications (1)

Publication Number Publication Date
WO1995015407A1 true WO1995015407A1 (en) 1995-06-08

Family

ID=22579992

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1994/013401 WO1995015407A1 (en) 1993-12-02 1994-11-22 Magneto-optical alloy sputter targets

Country Status (10)

Country Link
US (1) US5439500A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0730669B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (2) JP3662251B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100351778B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (1) CN1072733C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU1211095A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA2174433C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE69425833T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW251320B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO1995015407A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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JP3098204B2 (ja) * 1997-03-07 2000-10-16 ティーディーケイ株式会社 光磁気記録用合金ターゲット、その製造方法およびその再生方法
US5989673A (en) * 1997-06-30 1999-11-23 Sony Corporation Caromium-tantalum oxides (Cr-TaOx), sputtering targets and thin film seedlayer/sublayers for thin film magnetic recording media
US6010583A (en) * 1997-09-09 2000-01-04 Sony Corporation Method of making unreacted metal/aluminum sputter target
US6183686B1 (en) 1998-08-04 2001-02-06 Tosoh Smd, Inc. Sputter target assembly having a metal-matrix-composite backing plate and methods of making same
US7153468B2 (en) * 2000-08-18 2006-12-26 Honeywell International Inc. Physical vapor deposition targets and methods of formation
US20070099332A1 (en) * 2005-07-07 2007-05-03 Honeywell International Inc. Chalcogenide PVD components and methods of formation
US20080112878A1 (en) * 2006-11-09 2008-05-15 Honeywell International Inc. Alloy casting apparatuses and chalcogenide compound synthesis methods
JP5198925B2 (ja) * 2008-04-10 2013-05-15 三井金属鉱業株式会社 スパッタリングターゲット
US11149343B2 (en) * 2015-05-28 2021-10-19 Materion Corporation Processes for refurbishing a spent sputtering target
CN105803406B (zh) * 2016-03-14 2019-04-09 无锡舒玛天科新能源技术有限公司 一种磁光记录介质镀膜用稀土过渡合金旋转靶材的制备方法及其制备靶材
CN107449648B (zh) * 2017-06-30 2019-09-27 中国科学院广州地球化学研究所 一种适用于二次离子质谱仪分析的矿石矿物的样品靶的制备方法

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Also Published As

Publication number Publication date
CA2174433C (en) 2004-07-20
DE69425833D1 (de) 2000-10-12
CA2174433A1 (en) 1995-06-08
CN1072733C (zh) 2001-10-10
KR960705957A (ko) 1996-11-08
EP0730669B1 (en) 2000-09-06
JPH09506141A (ja) 1997-06-17
KR100351778B1 (ko) 2002-12-26
CN1136331A (zh) 1996-11-20
TW251320B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1995-07-11
DE69425833T2 (de) 2001-03-29
JP3662251B2 (ja) 2005-06-22
AU1211095A (en) 1995-06-19
US5439500A (en) 1995-08-08
JP2005171380A (ja) 2005-06-30
EP0730669A1 (en) 1996-09-11

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