AU1211095A - Magneto-optical alloy sputter targets - Google Patents

Magneto-optical alloy sputter targets

Info

Publication number
AU1211095A
AU1211095A AU12110/95A AU1211095A AU1211095A AU 1211095 A AU1211095 A AU 1211095A AU 12110/95 A AU12110/95 A AU 12110/95A AU 1211095 A AU1211095 A AU 1211095A AU 1211095 A AU1211095 A AU 1211095A
Authority
AU
Australia
Prior art keywords
magneto
sputter targets
alloy sputter
optical
optical alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU12110/95A
Other languages
English (en)
Inventor
Daniel R Marx
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Materials Research Corp
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Publication of AU1211095A publication Critical patent/AU1211095A/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/047Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582Record carriers characterised by the selection of the material or by the structure or form
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10586Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26Apparatus or processes specially adapted for the manufacture of record carriers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24306Metals or metalloids transition metal elements of groups 3-10

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
AU12110/95A 1993-12-02 1994-11-22 Magneto-optical alloy sputter targets Abandoned AU1211095A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US161143 1993-12-02
US08/161,143 US5439500A (en) 1993-12-02 1993-12-02 Magneto-optical alloy sputter targets
PCT/US1994/013401 WO1995015407A1 (en) 1993-12-02 1994-11-22 Magneto-optical alloy sputter targets

Publications (1)

Publication Number Publication Date
AU1211095A true AU1211095A (en) 1995-06-19

Family

ID=22579992

Family Applications (1)

Application Number Title Priority Date Filing Date
AU12110/95A Abandoned AU1211095A (en) 1993-12-02 1994-11-22 Magneto-optical alloy sputter targets

Country Status (10)

Country Link
US (1) US5439500A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0730669B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (2) JP3662251B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100351778B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (1) CN1072733C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU1211095A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA2174433C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE69425833T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW251320B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO1995015407A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3098204B2 (ja) * 1997-03-07 2000-10-16 ティーディーケイ株式会社 光磁気記録用合金ターゲット、その製造方法およびその再生方法
US5989673A (en) * 1997-06-30 1999-11-23 Sony Corporation Caromium-tantalum oxides (Cr-TaOx), sputtering targets and thin film seedlayer/sublayers for thin film magnetic recording media
US6010583A (en) * 1997-09-09 2000-01-04 Sony Corporation Method of making unreacted metal/aluminum sputter target
US6183686B1 (en) 1998-08-04 2001-02-06 Tosoh Smd, Inc. Sputter target assembly having a metal-matrix-composite backing plate and methods of making same
US7153468B2 (en) * 2000-08-18 2006-12-26 Honeywell International Inc. Physical vapor deposition targets and methods of formation
US20070099332A1 (en) * 2005-07-07 2007-05-03 Honeywell International Inc. Chalcogenide PVD components and methods of formation
US20080112878A1 (en) * 2006-11-09 2008-05-15 Honeywell International Inc. Alloy casting apparatuses and chalcogenide compound synthesis methods
JP5198925B2 (ja) * 2008-04-10 2013-05-15 三井金属鉱業株式会社 スパッタリングターゲット
US11149343B2 (en) * 2015-05-28 2021-10-19 Materion Corporation Processes for refurbishing a spent sputtering target
CN105803406B (zh) * 2016-03-14 2019-04-09 无锡舒玛天科新能源技术有限公司 一种磁光记录介质镀膜用稀土过渡合金旋转靶材的制备方法及其制备靶材
CN107449648B (zh) * 2017-06-30 2019-09-27 中国科学院广州地球化学研究所 一种适用于二次离子质谱仪分析的矿石矿物的样品靶的制备方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615911A (en) * 1969-05-16 1971-10-26 Bell Telephone Labor Inc Sputtered magnetic films
US3856579A (en) * 1972-12-04 1974-12-24 Battelle Development Corp Sputtered magnetic materials comprising rare-earth metals and method of preparation
US4367257A (en) * 1980-04-16 1983-01-04 Fuji Photo Film Co., Ltd. Thin magnetic recording medium
JPS60230903A (ja) * 1984-05-01 1985-11-16 Daido Steel Co Ltd 合金タ−ゲツトの製造方法
US4620872A (en) * 1984-10-18 1986-11-04 Mitsubishi Kinzoku Kabushiki Kaisha Composite target material and process for producing the same
JPH0673197B2 (ja) * 1985-02-25 1994-09-14 株式会社東芝 光磁気記録媒体とその製造方法
JPS6270550A (ja) * 1985-09-20 1987-04-01 Mitsubishi Metal Corp タ−ゲツト材
FR2601175B1 (fr) * 1986-04-04 1993-11-12 Seiko Epson Corp Cible de pulverisation cathodique et support d'enregistrement utilisant une telle cible.
JPH0766584B2 (ja) * 1986-04-11 1995-07-19 富士写真フイルム株式会社 光磁気記録媒体の製造方法
JPS6324030A (ja) * 1986-06-26 1988-02-01 Res Dev Corp Of Japan 異方性希土類磁石材料およびその製造方法
DE3627775A1 (de) * 1986-08-16 1988-02-18 Demetron Verfahren zur herstellung von targets
JPH0768612B2 (ja) * 1987-04-20 1995-07-26 日立金属株式会社 希土類金属―鉄族金属ターゲット用合金粉末、希土類金属―鉄族金属ターゲット、およびそれらの製造方法
JPS63274763A (ja) * 1987-04-30 1988-11-11 Sumitomo Metal Mining Co Ltd 光磁気記録用合金タ−ゲツト
JPS63274764A (ja) * 1987-04-30 1988-11-11 Sumitomo Metal Mining Co Ltd 光磁気記録用合金タ−ゲツト
JP2673807B2 (ja) * 1987-10-30 1997-11-05 パイオニア株式会社 光磁気記録媒体の製造方法
DE3738738C1 (en) * 1987-11-14 1989-01-26 Degussa Powder-metallurgical process for producing targets
DE3800449A1 (de) * 1988-01-09 1989-07-20 Leybold Ag Verfahren und einrichtung zur herstellung magnetooptischer, speicher- und loeschfaehiger datentraeger
US4824481A (en) * 1988-01-11 1989-04-25 Eaastman Kodak Company Sputtering targets for magneto-optic films and a method for making
US4885134A (en) * 1988-08-22 1989-12-05 Eastman Kodak Company Sputtering target and method of preparing the same
JPH0784656B2 (ja) * 1988-10-15 1995-09-13 住友金属鉱山株式会社 光磁気記録用合金ターゲット
US4992095A (en) * 1988-10-26 1991-02-12 Sumitomo Metal Mining Company, Ltd. Alloy target used for manufacturing magneto-optical recording medium

Also Published As

Publication number Publication date
CA2174433C (en) 2004-07-20
DE69425833D1 (de) 2000-10-12
CA2174433A1 (en) 1995-06-08
CN1072733C (zh) 2001-10-10
KR960705957A (ko) 1996-11-08
EP0730669B1 (en) 2000-09-06
JPH09506141A (ja) 1997-06-17
KR100351778B1 (ko) 2002-12-26
CN1136331A (zh) 1996-11-20
TW251320B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1995-07-11
DE69425833T2 (de) 2001-03-29
JP3662251B2 (ja) 2005-06-22
US5439500A (en) 1995-08-08
JP2005171380A (ja) 2005-06-30
EP0730669A1 (en) 1996-09-11
WO1995015407A1 (en) 1995-06-08

Similar Documents

Publication Publication Date Title
AU6453794A (en) Simultaneous amplification of multiple targets
AU7107994A (en) Stationary aperture plate for reactive sputter deposition
IL125103A0 (en) Sputtering targets and method for the preparation thereof
AU4314399A (en) Contoured sputtering target
AU4894893A (en) Refrigerator
AU5794094A (en) Tricritical point composition
AU4997597A (en) Method for fabricating sputtering targets
AU6665694A (en) Substrate-reactive coating composition
AU4129196A (en) Mechanically joined sputtering target and adapter therefor
AU1151592A (en) Target for cathode sputtering
AU591048B2 (en) Magnetron sputtering targets
AU1211095A (en) Magneto-optical alloy sputter targets
EP0534441A3 (en) Target for reactive sputtering and film-forming method using the target
GB2285269B (en) Target for magnetron cathode sputtering system consisting of a cobalt-base alloy
AU669406B2 (en) Brass alloy
AU4503696A (en) Sputtering apparatus with isolated coolant and sputtering ta rget therefor
AU5390694A (en) Putter
AU5837394A (en) Evaporator
AU3119493A (en) Magnesium alloy
AU7812991A (en) High performance high strength low alloy steel
AU4157396A (en) High utilization sputtering target
AU7816894A (en) Tracking system
AU7381594A (en) Method and device for magnetron sputtering
AU4519293A (en) Soft steel projectile
AU8509491A (en) Method of enhancing the performance of a magnetron sputtering target