WO1989008328A1 - Fabrication method for semiconductor device and film formation apparatus for said method - Google Patents
Fabrication method for semiconductor device and film formation apparatus for said method Download PDFInfo
- Publication number
- WO1989008328A1 WO1989008328A1 PCT/JP1988/001147 JP8801147W WO8908328A1 WO 1989008328 A1 WO1989008328 A1 WO 1989008328A1 JP 8801147 W JP8801147 W JP 8801147W WO 8908328 A1 WO8908328 A1 WO 8908328A1
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- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- wire
- etching
- back electrode
- semiconductor layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 230000015572 biosynthetic process Effects 0.000 title abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000010408 film Substances 0.000 claims abstract description 56
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 25
- 238000000059 patterning Methods 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 239000000243 solution Substances 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 11
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000011259 mixed solution Substances 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- 235000011114 ammonium hydroxide Nutrition 0.000 claims 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 claims 1
- 238000000926 separation method Methods 0.000 description 14
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- OXIKLRTYAYRAOE-CMDGGOBGSA-N (e)-3-(1-benzyl-3-pyridin-3-ylpyrazol-4-yl)prop-2-enoic acid Chemical compound N1=C(C=2C=NC=CC=2)C(/C=C/C(=O)O)=CN1CC1=CC=CC=C1 OXIKLRTYAYRAOE-CMDGGOBGSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000208125 Nicotiana Species 0.000 description 1
- 235000002637 Nicotiana tabacum Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- AOFSUBOXJFKGAZ-UHFFFAOYSA-O azanium nitric acid nitrate Chemical compound [NH4+].O[N+]([O-])=O.[O-][N+]([O-])=O AOFSUBOXJFKGAZ-UHFFFAOYSA-O 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
Definitions
- the present invention relates to a method for manufacturing a semiconductor device and a film forming apparatus for the method. More specifically, it is necessary to form a complete pattern on a semiconductor layer or a back electrode of a non-reflex silicon-based solar cell by a simple process.
- the present invention relates to a method of manufacturing a semiconductor device and a film forming apparatus for the same.
- a laser beam or other laser beam has been used for integration to form a pattern of the amorphous silicon-based semiconductor layer and the backside electrode. Has been implemented.
- the laser is applied to the amorphous silicon-based semiconductor layer.
- the performance of the solar cell may be degraded by the message of “Evening to the transparent electrode”, or the transparent electrode and the back surface at the laser drive may be used.
- Problems such as the change in contact resistance with the electrode over time (addition of resistance), etc. were also noted.—Also, the laser patterning of the backside electrode was difficult to work, The disadvantage is that stable production cannot be achieved, so other methods such as the etching method and the lift-off method have to be adopted. This had other problems, such as increased processing steps, increased production costs due to reduced productivity, and reduced yields.
- the present invention provides a method of manufacturing a semiconductor device capable of simultaneously performing a film forming step and a patterning step without deteriorating the performance of a solar cell. It is intended to provide a film forming apparatus for the method.
- the method of manufacturing a semiconductor device according to the present invention is directed to a semiconductor device in which a transparent electrode, an amorphous silicon-based semiconductor layer, and a back surface electrode are formed in this order on a substrate in this order.
- the patterning of the amorphous silicon-based semiconductor layer and / or the back electrode is performed so that the dielectric mask is substantially formed on the film forming surface.
- the feature is that it is performed by a removal process that removes as necessary.
- the film forming apparatus of the present invention is a film forming apparatus used for forming a semiconductor layer or a surface electrode of an amorphous silicon-based solar cell.
- FIG. 1 is a plan view of one embodiment of the film forming apparatus of the present invention before the substrate is set
- FIG. 2 is a diagram (A) showing the state in which the substrate is set in the film forming apparatus of FIG. )-It is an enlarged sectional view taken along the line (A).
- FIG. 1 is a plan view of an embodiment of the film forming apparatus of the present invention before the substrate is set
- FIG. 2 is (A) a state in which the substrate is set in the film forming apparatus of FIG. )-It is an enlarged sectional view taken along the line (A).
- the present invention is not limited to a plasma CVD apparatus and may be applied to other sputtering apparatuses. It can be widely applied to film formation equipment such as equipment and vapor deposition equipment.
- (1) is a substrate on which a semiconductor layer and a back electrode are formed, for example, a plate glass.
- a transparent electrode made of oxide or the like is formed by a CVD method or the like, and then, the transparent electrode is formed by a laser-scratch method or a laser-scratch method. It is converted into a pattern by the switching method.
- the wire (3) has one end fixed to the tray body (2) and the other end fixed to the tension adjusting screw (8).
- Fig. 2 shows a state in which the substrate (1) is set in the CVD tray body (2), and the film formation surface is formed on the wire (3) side.
- the printed board (1) is fixed by a fixing means consisting of a back plate (4), a spring (5), a back plate holder (6), and a back plate holder jig (7). Is fixed to the tray body (2) and positioned, and then pushed by the wire (3). This pressing is performed by using the elastic force of the spring (5), whereby the roller (3) is substantially placed on the film forming surface. It is kept in close contact. Then, the wire (3) is brought into close contact with the film forming surface, so that the transparent electrode surface is exposed even in a device with a large amount of incorporation such as plasma CVD. You can take turns.
- one end of the wire (3) is fixed to a tension adjusting screw (8), and the substrate (1) is set on the tray body (2).
- the tension of screw (3) is adjusted by the tension adjusting screw (8) so that Adhesion with the film formation surface of the substrate (1) can be further ensured.
- the wire (3) serves as a kind of mask, and by selecting the wire diameter from 0.08 to 2.0 mm, the pattern width is increased. Can be adjusted appropriately.
- the material of the wire (3) is not particularly limited, and may be plasma CVD, snow, or the like. Any material that can withstand the film forming process such as ringing can be used.
- Piano wire A Use is made of a Class B or Nickel Lucitan alloy wire.
- the tension of the wire (3) can be kept within a certain range.
- the plasma CVD apparatus has been described, but the same method can be applied to the sputtering apparatus which is the same discharge apparatus. What can be done is as described above. In addition, in a vapor deposition device, the amount of film twist is small. Rather, the same method can be used sufficiently.
- the entrained thin film is removed as follows.
- the amorphous silicon-based semiconductor layer is an alloy with other elements such as Si, N, and Sn, or microcrystallized thereof. Anything can be used.
- a dry etching such as a laser etching or a plasma etching can be used. It is possible to adopt a method such as the sputtering method or the inverse sputtering method.
- the etching solution it is preferable to use K0H or NaOH aqueous solution as the etching solution.
- the film immersed in the aqueous solution and wound around the wire portion is removed. After that, the whole substrate is washed with pure water and dried.
- the concentration of the K0H or NaOH aqueous solution used should be such that it does not prevent excessive removal of the amorphous silicon film other than the encased film. Due to the ease of control, the power of l ⁇ 20wt.% Is good, especially the power of 5 ⁇ iOwt.%. I like it.
- the temperature of the K0H or NaOHz solution should be set to a point that prevents excessive removal of the amorphous silicon film other than the entrained film. -10 to 40 from the point of ease of control.
- the temperature is C, especially at 20-30 ° C.
- the etching time is to ensure that the entrained film is removed and that the amorphous silicon film other than the entrained film is excessively removed. It is preferably between 10 seconds and 5 minutes, especially between 30 seconds and 2 minutes when considering protection. .
- the glass substrate is treated similarly to the above-described film-forming apparatus by the method of Wiyamas.
- the back electrode is formed by fixing to a tray on which the metal is stretched and subjecting a metal such as .Cr or Ag to, for example, snorting.
- the film formation may be another method such as a vapor deposition method.
- the wire diameter of the wire used for the wire mask can be selected in the same manner as in the case of patterning the amorphous silicon semiconductor layer.
- the backside electrode wrapped around the wire portion can be formed by a wet etching method, a plasma etching method, or the like. It may be removed by a method such as a dry cutting method or an inverse sputtering method.
- the etching method when using W as the back electrode, use a mixture of phosphoric acid, acetic acid, nitric acid, and pure water.
- the entire substrate can be immersed in the wire to remove the film that has wrapped around the wire. After that, the whole substrate is washed with pure water and dried.
- the volume ratio of the mixed solution is, for example, 16: 2: 1: 1 in the order of phosphoric acid, acetic acid, nitric acid, and pure water.
- This volume ratio can be selected as appropriate according to the total film thickness, the degree of winding, and the thickness of the film that has been turned around.For example, the winding ratio is small.
- the thickness of the embedded membrane is small, it is preferable to use a mixed solution having a volume ratio of 16: 2: 1: 5 in the order of phosphoric acid, g acid, nitric acid, and pure water. .
- the liquid temperature of the mixed solution may be selected in the same manner as in the above-described patterning of the amorphous silicon-based semiconductor layer.
- the etching time is Preferably, it should be 10 seconds to 5 minutes from the point of ensuring that the embedded film is removed and that the other films are not removed excessively. It is preferable that the time be between 30 seconds and 1 minute.
- etching solution in addition to the above-mentioned mixed solution, a dilute hydrochloric acid, a K0H aqueous solution or a mixed solution of ferric chloride, concentrated hydrochloric acid, and pure water are preferably used. You can do it.
- the composition of the etching solution for the Cr electrode is 20-30 ml of perchloric acid and 300-1000 pure water per 100 g of the second nitric acid ammonium nitrate.
- An amount in the ml range can be used, and as an example of a preferred composition can be added 26 ml of perchloric acid and 400 ml of pure water.
- the composition of the etching solution for the Ag electrode is a mixture of 30 to 50 g of chromic anhydride, 10 to 30 ml of concentrated sulfuric acid, and 1000 to 5000 ml of pure water.
- a solution in the range of ⁇ 60wt.% Ferric nitrate aqueous solution can be used, and as an example of a preferred composition, 40 g of cupric anhydride, 20 ml of concentrated sulfuric acid and pure water 2000 ml of mixed solution or 55 wt. Ferric nitrate aqueous solution can be added.
- the metal constituting the back electrode In order to prevent the metal constituting the back electrode from diffusing into the amorphous silicon-based semiconductor layer, it is necessary to form a back electrode having a two-layer structure.
- the first layer of the amorphous silicon-based semiconductor layer in this case, C Since r
- Ag (20-100 ⁇ ) / M (1000-10000 ⁇ ) In the same way, it is sufficient to etch only ⁇ .
- the production method of the present invention is characterized in that a removal step is employed as necessary. Therefore, it is also possible to adopt a removal step on one side and pattern the other side without the removal step.
- Thickness 2 Omm, large force; 'A transparent electrode of 6Q00A tin oxide is provided on a blue glass of 150mm x 440mm, and this transparent electrode is stipulated using a laser beam. Separated into patterns.
- the substrate (1) on which the pattern was formed in this way was fixed to the CV tray (2) shown in Fig. 1.
- Substrate [1) was positioned using four locations of substrate positioning jigs (9).
- a total of 17 fine wire wires (3) were used, and Piano type B having a wire diameter (diameter) of 0.3 mm was used.
- the tension of each wire was adjusted by the tension adjusting screw (8).
- Figure 2 shows the state where the substrate (1) is fixed.
- the CVD tray (2) with the substrate (1) fixed is placed in a plasma CVD apparatus, and the substrate temperature is set to 1S (TC, pressure l. OTorr, p-type amorphous silicon). 150 A for power supply, substrate temperature
- the distance between the end of the transparent electrode pattern line and the end of the semiconductor layer separation line closer to the transparent electrode pattern line is approximately
- the semiconductor separation substrate thus obtained was fixed to a spatter tray of the same type as in Fig. 1 with the semiconductor surface facing the wire side.
- the 17 wires are arranged so that they are each displaced by 0.25 mm in the direction perpendicular to the wires shown in Fig. 1. did.
- adjust the wire diameter of the wire was adjusted.
- the substrate in which the transparent electrode was patterned in the same manner as in Example 1 was replaced with a wire similar to that of FIG. 1 except that the wire force of the thin wire was not placed.
- the semiconductor layer was set on a CVD tray, and a semiconductor layer was formed on almost the entire surface under the same conditions as in Example 1.
- the semiconductor layer was separated using a YAG laser. Also, no thin wire was used for the sparkling ring, and a backside electrode was formed on almost the entire surface under the same conditions as in Example 1, and thereafter, Separation was performed by chemical etching.
- a transparent electrode of 6000 A in thickness of tin oxide was formed by plasma CVD, and the obtained transparent electrode was separated into a predetermined pattern using a laser beam. In this way, no.
- the substrate on which the turn was formed was fixed to the CVD tray (2) of the plasma CVD apparatus. There are 17 wires in total, wire diameter (diameter)
- a 0.3mni Piano wire type B was used.
- the CVD tray (2) on which this substrate is fixed is placed in a plasma apparatus by E, and the substrate temperature is 130 ° C, the pressure is l. OTorr, the p-type amorphous silicon layer is 150A, The substrate temperature is 180 C, the pressure is 0.5 Torr, the i-type amorphous silicon layer is 6000 A, and the substrate temperature is 180.
- a 300 A n-type microcrystalline silicon layer was formed at C and pressure of l.OTorr. After that, the CVD tray (2) was taken out, the substrate was removed from the tray, and the portion masked by the wire was observed. In addition, the penetration force of the membrane was observed.
- the substrate on which the amorphous silicon layer is formed is immersed in a 10 vt-% aqueous solution of KOH at a liquid temperature of 2 QC for 30 seconds, and the wound portion of the film is exposed. That's it. When the masked part was observed again, no twist was found. In addition, the film thickness of the amorphous silicon employed except for the masking portion was hardly reduced by the above-mentioned etching treatment. Using a precision projector, the minimum pattern width was measured for each part of the line where the transparent electrode was completely exposed.
- ⁇ is the distance between the end-to-end closer to the transparent electrode path Turn-down line of the semiconductor layer of the separation line of the path Turn-down line of such your transparent electrode was Tsu Oh about 150 Otsu "
- the obtained semiconductor separation substrate is fixed to a spatter tray of the same type as that used for semiconductor film formation, with the semiconductor surface facing the wire side. Specified. This snow ,. In the butterfly tray, each of the 17 wires is perpendicular to the wire shown during semiconductor film formation.
- the wire diameter of the wire was set to 0.2 DIDI.
- the membrane was immersed in a solution of 50 ml of acid, 25 ml of nitric acid, and 25 ml of pure water at a temperature of 2 (immersed in TC for 30 seconds and etched again. Observation of the king part showed no skewing and no conduction part was observed, and the separation line of the back electrode CrZ Ai was measured by the method described above.
- the minimum pattern width of the portion where M was masked and the semiconductor layer was completely exposed was 180 on average for the 17 lines, and other than the masking portion.
- the decrease in the film thickness was 100 to 200 mm, which did not affect the performance of the semiconductor device.
- the substrate on which the transparent electrodes were patterned in the same manner as in Example 2 was replaced with a CVD train similar to that in Example 2 except that no thin wire was arranged.
- the semiconductor layer was set, and a semiconductor layer was formed on almost the entire surface under the same conditions as in the embodiment.
- the semiconductor layer was separated using a YAG laser.
- a thin wire was not used, and a back surface electrode was formed on almost the entire surface under the same conditions as in Example 2, and then the surface was formed. Separation was performed by chemical etching.
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
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- Photovoltaic Devices (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63052075A JPH0620154B2 (ja) | 1988-03-05 | 1988-03-05 | 半導体装置の製法 |
JP63/52075 | 1988-03-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1989008328A1 true WO1989008328A1 (en) | 1989-09-08 |
Family
ID=12904698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1988/001147 WO1989008328A1 (en) | 1988-03-05 | 1988-11-14 | Fabrication method for semiconductor device and film formation apparatus for said method |
Country Status (4)
Country | Link |
---|---|
US (1) | US5124269A (ja) |
EP (1) | EP0373221A4 (ja) |
JP (1) | JPH0620154B2 (ja) |
WO (1) | WO1989008328A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2782273B2 (ja) * | 1990-09-07 | 1998-07-30 | 鐘淵化学工業株式会社 | パターン化薄膜の形成に用いる基板保持治具 |
US5264376A (en) * | 1991-06-24 | 1993-11-23 | Texas Instruments Incorporated | Method of making a thin film solar cell |
US5508229A (en) * | 1994-05-24 | 1996-04-16 | National Semiconductor Corporation | Method for forming solder bumps in semiconductor devices |
DE102006004869B4 (de) * | 2006-01-27 | 2007-12-20 | Universität Stuttgart | Verfahren zum Herstellen von seriell verschalteten Solarzellen sowie Vorrichtung zur Durchführung des Verfahrens |
DE102009023125A1 (de) * | 2009-05-20 | 2010-11-25 | Universität Stuttgart | Verfahren zur Herstellung seriell verschalteter Solarzellen sowie Vorrichtung zur Durchführung des Verfahrens |
WO2011002212A2 (ko) * | 2009-06-30 | 2011-01-06 | 엘지이노텍주식회사 | 태양광 발전장치 및 이의 제조방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56138929A (en) * | 1980-03-31 | 1981-10-29 | Canon Inc | Component solution for etching |
JPS57207342A (en) * | 1981-06-15 | 1982-12-20 | Fuji Electric Co Ltd | Etchant for metallic wiring |
JPS57208182A (en) * | 1981-06-17 | 1982-12-21 | Semiconductor Energy Lab Co Ltd | Manufacture of phtoelectric converter |
JPS59202671A (ja) * | 1983-05-02 | 1984-11-16 | Matsushita Electric Ind Co Ltd | 光起電力素子 |
JPH0674533A (ja) * | 1992-08-25 | 1994-03-15 | Matsushita Electric Ind Co Ltd | 室内調湿機 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3969686A (en) * | 1975-03-26 | 1976-07-13 | Xerox Corporation | Beam collimation using multiple coupled elements |
US4297391A (en) * | 1979-01-16 | 1981-10-27 | Solarex Corporation | Method of applying electrical contacts to a photovoltaic cell |
NL8101409A (nl) * | 1981-03-23 | 1982-10-18 | Philips Nv | Halfgeleiderlaser met tenminste twee stralingsbundels, en werkwijze ter vervaardiging daarvan. |
JPS57170554A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Semiconductor device |
JPS5825738A (ja) * | 1981-08-08 | 1983-02-16 | Nippon Gakki Seizo Kk | Fmステレオ復調回路 |
JPS59147469A (ja) * | 1983-02-14 | 1984-08-23 | Hitachi Ltd | 非晶質シリコン太陽電池 |
US4585502A (en) * | 1984-04-27 | 1986-04-29 | Hitachi Condenser Co., Ltd. | Process for producing printed circuit board |
DE3583583D1 (de) * | 1984-11-17 | 1991-08-29 | Daikin Ind Ltd | Aetzzusammensetzung. |
EP0193820A3 (en) * | 1985-02-27 | 1988-01-07 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Method for forming a thin film pattern |
US4707394A (en) * | 1986-09-19 | 1987-11-17 | Firan Corporation | Method for producing circuit boards with deposited metal patterns and circuit boards produced thereby |
JP2930382B2 (ja) * | 1990-07-16 | 1999-08-03 | 雪印乳業株式会社 | 発酵乳の製造方法 |
-
1988
- 1988-03-05 JP JP63052075A patent/JPH0620154B2/ja not_active Expired - Lifetime
- 1988-11-14 WO PCT/JP1988/001147 patent/WO1989008328A1/ja not_active Application Discontinuation
- 1988-11-14 EP EP19880909820 patent/EP0373221A4/en not_active Ceased
-
1990
- 1990-12-28 US US07/633,192 patent/US5124269A/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56138929A (en) * | 1980-03-31 | 1981-10-29 | Canon Inc | Component solution for etching |
JPS57207342A (en) * | 1981-06-15 | 1982-12-20 | Fuji Electric Co Ltd | Etchant for metallic wiring |
JPS57208182A (en) * | 1981-06-17 | 1982-12-21 | Semiconductor Energy Lab Co Ltd | Manufacture of phtoelectric converter |
JPS59202671A (ja) * | 1983-05-02 | 1984-11-16 | Matsushita Electric Ind Co Ltd | 光起電力素子 |
JPH0674533A (ja) * | 1992-08-25 | 1994-03-15 | Matsushita Electric Ind Co Ltd | 室内調湿機 |
Non-Patent Citations (2)
Title |
---|
NARAOKA KIYOTAKE (Electronics no Seimitsu Bisai Kako) 20 August 1983 (20. 08. 83) Sogo Denshi Shuppan-Sha (Tokyo) (page 88, table 3.5) (Family: none) * |
See also references of EP0373221A4 * |
Also Published As
Publication number | Publication date |
---|---|
JPH0620154B2 (ja) | 1994-03-16 |
EP0373221A4 (en) | 1992-01-08 |
EP0373221A1 (en) | 1990-06-20 |
JPH01225371A (ja) | 1989-09-08 |
US5124269A (en) | 1992-06-23 |
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