WO1987007650A1 - Cible realisee en tantale metallique extremement pur et procede pour sa production - Google Patents

Cible realisee en tantale metallique extremement pur et procede pour sa production Download PDF

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Publication number
WO1987007650A1
WO1987007650A1 PCT/JP1987/000365 JP8700365W WO8707650A1 WO 1987007650 A1 WO1987007650 A1 WO 1987007650A1 JP 8700365 W JP8700365 W JP 8700365W WO 8707650 A1 WO8707650 A1 WO 8707650A1
Authority
WO
WIPO (PCT)
Prior art keywords
ppm
metals
target
highly pure
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1987/000365
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Iwao Kyono
Hiroshi Hosaka
Seiji Yaegashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to DE19873790259 priority Critical patent/DE3790259C2/de
Publication of WO1987007650A1 publication Critical patent/WO1987007650A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G35/00—Compounds of tantalum
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G35/00—Compounds of tantalum
    • C01G35/006—Compounds containing tantalum, with or without oxygen or hydrogen, and containing two or more other elements
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00—Obtaining refractory metals
    • C22B34/20—Obtaining niobium, tantalum or vanadium
    • C22B34/24—Obtaining niobium or tantalum
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture And Refinement Of Metals (AREA)
PCT/JP1987/000365 1986-06-11 1987-06-09 Cible realisee en tantale metallique extremement pur et procede pour sa production Ceased WO1987007650A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19873790259 DE3790259C2 (de) 1986-06-11 1987-06-09 Hochreines metallisches Tantaltarget und Verfahren zu seiner Herstellung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13380286A JPH0621346B2 (ja) 1986-06-11 1986-06-11 高純度金属タンタル製ターゲットの製造方法
JP61/133802 1986-06-11

Publications (1)

Publication Number Publication Date
WO1987007650A1 true WO1987007650A1 (fr) 1987-12-17

Family

ID=15113375

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1987/000365 Ceased WO1987007650A1 (fr) 1986-06-11 1987-06-09 Cible realisee en tantale metallique extremement pur et procede pour sa production

Country Status (3)

Country Link
JP (1) JPH0621346B2 (enExample)
DE (2) DE3790259T1 (enExample)
WO (1) WO1987007650A1 (enExample)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0902102A1 (en) * 1997-09-10 1999-03-17 Japan Energy Corporation Ta sputtering targets, method of manufacturing the same, and assemblies
WO2000031310A1 (en) * 1998-11-25 2000-06-02 Cabot Corporation High purity tantalum and products containing the same like sputter targets
US6331233B1 (en) * 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6569270B2 (en) 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US6723187B2 (en) 1999-12-16 2004-04-20 Honeywell International Inc. Methods of fabricating articles and sputtering targets
KR100432284B1 (ko) * 2000-08-24 2004-05-22 가부시끼가이샤 도시바 스퍼터링 타겟
US6863750B2 (en) 2000-05-22 2005-03-08 Cabot Corporation High purity niobium and products containing the same, and methods of making the same
US6921470B2 (en) 2003-02-13 2005-07-26 Cabot Corporation Method of forming metal blanks for sputtering targets
US7485198B2 (en) * 2001-01-11 2009-02-03 Cabot Corporation Tantalum and niobium billets and methods of producing the same
US7517417B2 (en) 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US8382920B2 (en) 2006-03-07 2013-02-26 Global Advanced Metals, Usa, Inc. Methods of producing deformed metal articles
CN115976481A (zh) * 2022-12-23 2023-04-18 南京航空航天大学 一种靶材、金属钽表面复合梯度陶瓷涂层的制法及其所得涂层

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6323055B1 (en) 1998-05-27 2001-11-27 The Alta Group, Inc. Tantalum sputtering target and method of manufacture
GB2359825A (en) * 1998-11-12 2001-09-05 Applied Materials Inc Improved tantalum-containing barrier layers for copper using high purity tantalum targets for sputtering
JP2002363662A (ja) * 2001-06-01 2002-12-18 Nikko Materials Co Ltd 高純度タンタルの回収方法並びに高純度タンタルスパッタリングターゲット及び該スパッタリングターゲットにより形成された薄膜
US7699021B2 (en) 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
US7651306B2 (en) 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7396412B2 (en) 2004-12-22 2008-07-08 Sokudo Co., Ltd. Coat/develop module with shared dispense
JP5731770B2 (ja) * 2010-08-23 2015-06-10 株式会社東芝 スパッタリングターゲットの製造方法及びスパッタリングターゲット
KR101500108B1 (ko) * 2013-07-23 2015-03-06 희성금속 주식회사 미세 결정입자를 갖는 스퍼터링용 탄탈럼 타겟 및 이의 제조방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4956810A (enExample) * 1972-10-05 1974-06-03
JPS5832010A (ja) * 1981-08-20 1983-02-24 Fujitsu Ltd 金属シリサイド膜の形成方法
JPS60145304A (ja) * 1984-01-09 1985-07-31 Showa Kiyabotsuto Suupaa Metal Kk タンタル粉末の製造法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4956810A (enExample) * 1972-10-05 1974-06-03
JPS5832010A (ja) * 1981-08-20 1983-02-24 Fujitsu Ltd 金属シリサイド膜の形成方法
JPS60145304A (ja) * 1984-01-09 1985-07-31 Showa Kiyabotsuto Suupaa Metal Kk タンタル粉末の製造法

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6569270B2 (en) 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
EP0902102A1 (en) * 1997-09-10 1999-03-17 Japan Energy Corporation Ta sputtering targets, method of manufacturing the same, and assemblies
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
KR100512295B1 (ko) * 1998-06-17 2005-09-05 존슨 마테이 일렉트로닉스, 인코포레이티드 미세균일 구조 및 조직을 갖는 금속재 및 그 제조방법
WO2000031310A1 (en) * 1998-11-25 2000-06-02 Cabot Corporation High purity tantalum and products containing the same like sputter targets
US7585380B2 (en) 1998-11-25 2009-09-08 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US6348113B1 (en) 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
CN100480405C (zh) * 1998-11-25 2009-04-22 卡伯特公司 高纯钽及如溅射靶的含高纯钽的制品
US7431782B2 (en) 1998-11-25 2008-10-07 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
EP1496130A1 (en) * 1998-11-25 2005-01-12 Cabot Corporation High purity tantalum for producing sputter targets
US6878250B1 (en) 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US6723187B2 (en) 1999-12-16 2004-04-20 Honeywell International Inc. Methods of fabricating articles and sputtering targets
US7101447B2 (en) 2000-02-02 2006-09-05 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US7517417B2 (en) 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US6331233B1 (en) * 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US6863750B2 (en) 2000-05-22 2005-03-08 Cabot Corporation High purity niobium and products containing the same, and methods of making the same
KR100432284B1 (ko) * 2000-08-24 2004-05-22 가부시끼가이샤 도시바 스퍼터링 타겟
US7485198B2 (en) * 2001-01-11 2009-02-03 Cabot Corporation Tantalum and niobium billets and methods of producing the same
US8231744B2 (en) * 2001-01-11 2012-07-31 Global Advanced Metals, Usa, Inc. Tantalum and niobium billets and methods of producing the same
US6921470B2 (en) 2003-02-13 2005-07-26 Cabot Corporation Method of forming metal blanks for sputtering targets
US8382920B2 (en) 2006-03-07 2013-02-26 Global Advanced Metals, Usa, Inc. Methods of producing deformed metal articles
US8974611B2 (en) 2006-03-07 2015-03-10 Global Advanced Metals, Usa, Inc. Methods of producing deformed metal articles
CN115976481A (zh) * 2022-12-23 2023-04-18 南京航空航天大学 一种靶材、金属钽表面复合梯度陶瓷涂层的制法及其所得涂层

Also Published As

Publication number Publication date
DE3790259C2 (de) 1990-02-08
JPH0621346B2 (ja) 1994-03-23
JPS62297463A (ja) 1987-12-24
DE3790259T1 (enExample) 1988-06-23

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