DE3790259T1 - - Google Patents

Info

Publication number
DE3790259T1
DE3790259T1 DE19873790259 DE3790259T DE3790259T1 DE 3790259 T1 DE3790259 T1 DE 3790259T1 DE 19873790259 DE19873790259 DE 19873790259 DE 3790259 T DE3790259 T DE 3790259T DE 3790259 T1 DE3790259 T1 DE 3790259T1
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19873790259
Other versions
DE3790259C2 (de
Inventor
Iwao Kyono
Hiroshi Hosaka
Seiji Toda Saitama Jp Yaegashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Publication of DE3790259T1 publication Critical patent/DE3790259T1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G35/00—Compounds of tantalum
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G35/00—Compounds of tantalum
    • C01G35/006—Compounds containing, besides tantalum, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00—Obtaining refractory metals
    • C22B34/20—Obtaining niobium, tantalum or vanadium
    • C22B34/24—Obtaining niobium or tantalum
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture And Refinement Of Metals (AREA)
DE19873790259 1986-06-11 1987-06-09 Pending DE3790259T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13380286A JPH0621346B2 (ja) 1986-06-11 1986-06-11 高純度金属タンタル製ターゲットの製造方法

Publications (1)

Publication Number Publication Date
DE3790259T1 true DE3790259T1 (de) 1988-06-23

Family

ID=15113375

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19873790259 Expired - Lifetime DE3790259C2 (de) 1986-06-11 1987-06-09 Hochreines metallisches Tantaltarget und Verfahren zu seiner Herstellung
DE19873790259 Pending DE3790259T1 (de) 1986-06-11 1987-06-09

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19873790259 Expired - Lifetime DE3790259C2 (de) 1986-06-11 1987-06-09 Hochreines metallisches Tantaltarget und Verfahren zu seiner Herstellung

Country Status (3)

Country Link
JP (1) JPH0621346B2 (de)
DE (2) DE3790259C2 (de)
WO (1) WO1987007650A1 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000029636A2 (en) * 1998-11-12 2000-05-25 Applied Materials, Inc. High purity tantalum targets for sputtering
EP1088115A1 (de) * 1998-06-17 2001-04-04 Johnson Matthey Electronics Inc Metallartikel mit feiner gleichmässiger struktur und textur und verfahren zu dessen herstellung
EP1090153A1 (de) * 1998-05-27 2001-04-11 The Alta Group, Inc. Tantalsputtertargets und verfahren zu ihrer herstellung

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6569270B2 (en) 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
JPH1180942A (ja) * 1997-09-10 1999-03-26 Japan Energy Corp Ｔａスパッタターゲットとその製造方法及び組立体
US6348113B1 (en) 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US6878250B1 (en) 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US7517417B2 (en) 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US6331233B1 (en) 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
DE60136351D1 (de) 2000-05-22 2008-12-11 Cabot Corp Hochreines niobmetall und erzeugnisse daraus und verfahren zu dessen herstellung
JP4825345B2 (ja) * 2000-08-24 2011-11-30 株式会社東芝 スパッタリングターゲットとそれを用いたバリア層および電子デバイスの形成方法
IL156802A0 (en) * 2001-01-11 2004-02-08 Cabot Corp Tantalum and niobium billets and methods of producing same
JP2002363662A (ja) * 2001-06-01 2002-12-18 Nikko Materials Co Ltd 高純度タンタルの回収方法並びに高純度タンタルスパッタリングターゲット及び該スパッタリングターゲットにより形成された薄膜
US6921470B2 (en) 2003-02-13 2005-07-26 Cabot Corporation Method of forming metal blanks for sputtering targets
US7651306B2 (en) 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US7371022B2 (en) 2004-12-22 2008-05-13 Sokudo Co., Ltd. Developer endpoint detection in a track lithography system
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
US7699021B2 (en) 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
CN101374611B (zh) 2006-03-07 2015-04-08 卡伯特公司 制备变形金属制品的方法
JP5731770B2 (ja) * 2010-08-23 2015-06-10 株式会社東芝 スパッタリングターゲットの製造方法及びスパッタリングターゲット
KR101500108B1 (ko) * 2013-07-23 2015-03-06 희성금속 주식회사 미세 결정입자를 갖는 스퍼터링용 탄탈럼 타겟 및 이의 제조방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5514871B2 (de) * 1972-10-05 1980-04-19
JPS5832010A (ja) * 1981-08-20 1983-02-24 Fujitsu Ltd 金属シリサイド膜の形成方法
JPS60145304A (ja) * 1984-01-09 1985-07-31 Showa Kiyabotsuto Suupaa Metal Kk タンタル粉末の製造法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1090153A1 (de) * 1998-05-27 2001-04-11 The Alta Group, Inc. Tantalsputtertargets und verfahren zu ihrer herstellung
EP1090153A4 (de) * 1998-05-27 2001-09-05 Alta Group Inc Tantalsputtertargets und verfahren zu ihrer herstellung
EP1088115A1 (de) * 1998-06-17 2001-04-04 Johnson Matthey Electronics Inc Metallartikel mit feiner gleichmässiger struktur und textur und verfahren zu dessen herstellung
EP1088115A4 (de) * 1998-06-17 2005-03-30 Johnson Matthey Elect Inc Metallartikel mit feiner gleichmässiger struktur und textur und verfahren zu dessen herstellung
WO2000029636A2 (en) * 1998-11-12 2000-05-25 Applied Materials, Inc. High purity tantalum targets for sputtering
WO2000029636A3 (en) * 1998-11-12 2000-09-08 Applied Materials Inc High purity tantalum targets for sputtering
GB2359825A (en) * 1998-11-12 2001-09-05 Applied Materials Inc Improved tantalum-containing barrier layers for copper using high purity tantalum targets for sputtering

Also Published As

Publication number Publication date
WO1987007650A1 (en) 1987-12-17
DE3790259C2 (de) 1990-02-08
JPS62297463A (ja) 1987-12-24
JPH0621346B2 (ja) 1994-03-23

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