WO2000029636A3 - High purity tantalum targets for sputtering - Google Patents

High purity tantalum targets for sputtering Download PDF

Info

Publication number
WO2000029636A3
WO2000029636A3 PCT/US1999/026290 US9926290W WO0029636A3 WO 2000029636 A3 WO2000029636 A3 WO 2000029636A3 US 9926290 W US9926290 W US 9926290W WO 0029636 A3 WO0029636 A3 WO 0029636A3
Authority
WO
WIPO (PCT)
Prior art keywords
ppm
weight
tantalum
content below
sputtering
Prior art date
Application number
PCT/US1999/026290
Other languages
French (fr)
Other versions
WO2000029636A9 (en
WO2000029636A2 (en
Inventor
Binxi Sun
Tony Chiang
Vikram Pavate
Peijun Ding
Barry Chin
Arvind Sundarrajan
Ilyoung Richard Hong
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to GB0112058A priority Critical patent/GB2359825A/en
Priority to KR1020017006025A priority patent/KR20010080437A/en
Priority to JP2000582614A priority patent/JP2002530526A/en
Priority to DE19983727T priority patent/DE19983727T1/en
Publication of WO2000029636A2 publication Critical patent/WO2000029636A2/en
Publication of WO2000029636A3 publication Critical patent/WO2000029636A3/en
Publication of WO2000029636A9 publication Critical patent/WO2000029636A9/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Improved tantalum-containing barrier layers are obtained by sputter depositing tantalum and/or tantalum nitride from a target having a low contaminant level, i.e., a metallic contaminant content below about 30 ppm by weight; or a niobium contaminant content below about 50 ppm by weight, preferably below 10 ppm, a molybdenum content below about 10 ppm by weight, a gold contaminants below about 15 ppm by weight, and a tungsten content below about 10 ppm by weight. Medium time to failure of copper capacitors including these layers is increased over the use of conventional tantalum targets which have higher amounts of contaminants.
PCT/US1999/026290 1998-11-12 1999-11-05 High purity tantalum targets for sputtering WO2000029636A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB0112058A GB2359825A (en) 1998-11-12 1999-11-05 Improved tantalum-containing barrier layers for copper using high purity tantalum targets for sputtering
KR1020017006025A KR20010080437A (en) 1998-11-12 1999-11-05 High purity tantalum targets for sputtering
JP2000582614A JP2002530526A (en) 1998-11-12 1999-11-05 Improved tantalum containing barrier layer for copper using high purity tantalum target for sputtering
DE19983727T DE19983727T1 (en) 1998-11-12 1999-11-05 Improved tantalum-containing copper barrier layers using high purity tantalum targets for sputtering

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19107898A 1998-11-12 1998-11-12
US09/191,078 1998-11-12

Publications (3)

Publication Number Publication Date
WO2000029636A2 WO2000029636A2 (en) 2000-05-25
WO2000029636A3 true WO2000029636A3 (en) 2000-09-08
WO2000029636A9 WO2000029636A9 (en) 2001-07-19

Family

ID=22704050

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/026290 WO2000029636A2 (en) 1998-11-12 1999-11-05 High purity tantalum targets for sputtering

Country Status (6)

Country Link
JP (1) JP2002530526A (en)
KR (1) KR20010080437A (en)
DE (1) DE19983727T1 (en)
GB (1) GB2359825A (en)
TW (1) TW520401B (en)
WO (1) WO2000029636A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4336206B2 (en) 2004-01-07 2009-09-30 Ｈｏｙａ株式会社 Mask blank manufacturing method and mask blank manufacturing sputtering target
US7686926B2 (en) 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
US7211507B2 (en) * 2004-06-02 2007-05-01 International Business Machines Corporation PE-ALD of TaN diffusion barrier region on low-k materials

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3790259T1 (en) * 1986-06-11 1988-06-23 Nippon Mining Co., Ltd., Tokio/Tokyo, Jp
US5111355A (en) * 1990-09-13 1992-05-05 National Semiconductor Corp. High value tantalum oxide capacitor
EP0496637A2 (en) * 1991-01-25 1992-07-29 Kabushiki Kaisha Toshiba High purity conductive films and their use in semiconductors
US5707498A (en) * 1996-07-12 1998-01-13 Applied Materials, Inc. Avoiding contamination from induction coil in ionized sputtering
EP0844313A2 (en) * 1996-11-21 1998-05-27 Applied Materials, Inc. Method and apparatus for sputtering in a chamber having an inductively coupled plasma
EP0872572A1 (en) * 1997-04-15 1998-10-21 Japan Energy Corporation Sputtering target and a method for the manufacture thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3790259T1 (en) * 1986-06-11 1988-06-23 Nippon Mining Co., Ltd., Tokio/Tokyo, Jp
US5111355A (en) * 1990-09-13 1992-05-05 National Semiconductor Corp. High value tantalum oxide capacitor
EP0496637A2 (en) * 1991-01-25 1992-07-29 Kabushiki Kaisha Toshiba High purity conductive films and their use in semiconductors
US5707498A (en) * 1996-07-12 1998-01-13 Applied Materials, Inc. Avoiding contamination from induction coil in ionized sputtering
EP0844313A2 (en) * 1996-11-21 1998-05-27 Applied Materials, Inc. Method and apparatus for sputtering in a chamber having an inductively coupled plasma
EP0872572A1 (en) * 1997-04-15 1998-10-21 Japan Energy Corporation Sputtering target and a method for the manufacture thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HASHIMOTO C ET AL: "HIGH QUALITY TA2O5 FILMS USING ULTRA-HIGH PURITY TA SPUTTERING TARGET", JAPANESE JOURNAL OF APPLIED PHYSICS, SUPPLEMENTS,JA,JAPAN SOCIETY OF APPLIED PHYSICS. TOKYO, 20 August 1986 (1986-08-20), pages 253 - 256, XP000097430, ISSN: 0021-4922 *

Also Published As

Publication number Publication date
GB0112058D0 (en) 2001-07-11
GB2359825A (en) 2001-09-05
WO2000029636A9 (en) 2001-07-19
WO2000029636A2 (en) 2000-05-25
JP2002530526A (en) 2002-09-17
DE19983727T1 (en) 2002-03-21
KR20010080437A (en) 2001-08-22
TW520401B (en) 2003-02-11

Similar Documents

Publication Publication Date Title
WO2006121604A3 (en) Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereof
US5123980A (en) Sputter deposited amorphous titanium aluminum alloys
EP1233448A3 (en) Reliable interconnects with low via/contact resistance
JP2004511651A5 (en) Niobium sputter element, niobium metal and articles containing same
TW200517506A (en) Niobium suboxide powder
DE50014374D1 (en) solder alloy
WO2002069380A3 (en) Atomically thin highly resistive barrier layer in a copper via
WO2003028090A3 (en) Integration of barrier layer and seed layer
AU2141792A (en) Wrought tantalum or niobium alloy having silicon and a compound dopant
WO2008027186A3 (en) Integrated process for sputter deposition of a conductive barrier layer, especially an alloy of ruthenium and tantalum, underlying copper or copper alloy seed layer
ATE279542T1 (en) HIGH PURITY TANTALUM METAL AND PRODUCTS THEREOF, SUCH AS SPUTTING TARGET
WO2003027355A1 (en) Soft metal and method for preparation thereof, and exterior part of watch and method for preparation thereof
WO2007103014A3 (en) Sputtering target
EP0588351B1 (en) Hard wear-resistant film and method for production thereof
WO2000029636A3 (en) High purity tantalum targets for sputtering
AU1967500A (en) Damage tolerant aluminium alloy product and method of its manufacture
WO2002031218B1 (en) Sputter targets
MY125124A (en) Low resistivity tantalum
WO2001091181A3 (en) Liner materials
CA2322363A1 (en) Method of forming chromium coated copper for printed circuit boards
TW200511457A (en) Conductive sheet having conductive layer with improved adhesion and product including the same
KR20030020986A (en) Sputtering target
WO2002014576B1 (en) Sputtering target
WO2003063243A8 (en) Thin films, structures having thin films, and methods of forming thin films
KR960035691A (en) Contact electrode for vacuum interrupter

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): DE GB JP KR

AK Designated states

Kind code of ref document: A3

Designated state(s): DE GB JP KR

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 1020017006025

Country of ref document: KR

ENP Entry into the national phase

Ref document number: 2000 582614

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 200112058

Country of ref document: GB

Kind code of ref document: A

AK Designated states

Kind code of ref document: C2

Designated state(s): DE GB JP KR

COP Corrected version of pamphlet

Free format text: PAGES 1/3-3/3, DRAWINGS, REPLACED BY NEW PAGES 1/3-3/3; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE

WWP Wipo information: published in national office

Ref document number: 1020017006025

Country of ref document: KR

RET De translation (de og part 6b)

Ref document number: 19983727

Country of ref document: DE

Date of ref document: 20020321

WWE Wipo information: entry into national phase

Ref document number: 19983727

Country of ref document: DE

WWW Wipo information: withdrawn in national office

Ref document number: 1020017006025

Country of ref document: KR