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WO2000029636A3 - High purity tantalum targets for sputtering - Google Patents

High purity tantalum targets for sputtering Download PDF

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Publication number
WO2000029636A3
WO2000029636A3 PCT/US1999/026290 US9926290W WO0029636A3 WO 2000029636 A3 WO2000029636 A3 WO 2000029636A3 US 9926290 W US9926290 W US 9926290W WO 0029636 A3 WO0029636 A3 WO 0029636A3
Authority
WO
WIPO (PCT)
Prior art keywords
ppm
weight
tantalum
below
content below
Prior art date
Application number
PCT/US1999/026290
Other languages
French (fr)
Other versions
WO2000029636A2 (en
WO2000029636A9 (en
Inventor
Binxi Sun
Tony Chiang
Vikram Pavate
Peijun Ding
Barry Chin
Arvind Sundarrajan
Ilyoung Richard Hong
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US19107898A priority Critical
Priority to US09/191,078 priority
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2000029636A2 publication Critical patent/WO2000029636A2/en
Publication of WO2000029636A3 publication Critical patent/WO2000029636A3/en
Publication of WO2000029636A9 publication Critical patent/WO2000029636A9/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28568Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising transition metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641Nitrides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Abstract

Improved tantalum-containing barrier layers are obtained by sputter depositing tantalum and/or tantalum nitride from a target having a low contaminant level, i.e., a metallic contaminant content below about 30 ppm by weight; or a niobium contaminant content below about 50 ppm by weight, preferably below 10 ppm, a molybdenum content below about 10 ppm by weight, a gold contaminants below about 15 ppm by weight, and a tungsten content below about 10 ppm by weight. Medium time to failure of copper capacitors including these layers is increased over the use of conventional tantalum targets which have higher amounts of contaminants.
PCT/US1999/026290 1998-11-12 1999-11-05 High purity tantalum targets for sputtering WO2000029636A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US19107898A true 1998-11-12 1998-11-12
US09/191,078 1998-11-12

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE1999183727 DE19983727T1 (en) 1998-11-12 1999-11-05 Improved tantalum-containing barrier layers for copper using high purity tantalum sputtering targets when
GB0112058A GB2359825A (en) 1998-11-12 1999-11-05 Improved tantalum-containing barrier layers for copper using high purity tantalum targets for sputtering
JP2000582614A JP2002530526A (en) 1998-11-12 1999-11-05 Tantalum-containing barrier layers for an improved copper using high purity tantalum target in a sputtering

Publications (3)

Publication Number Publication Date
WO2000029636A2 WO2000029636A2 (en) 2000-05-25
WO2000029636A3 true WO2000029636A3 (en) 2000-09-08
WO2000029636A9 WO2000029636A9 (en) 2001-07-19

Family

ID=22704050

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/026290 WO2000029636A2 (en) 1998-11-12 1999-11-05 High purity tantalum targets for sputtering

Country Status (5)

Country Link
JP (1) JP2002530526A (en)
DE (1) DE19983727T1 (en)
GB (1) GB2359825A (en)
TW (1) TW520401B (en)
WO (1) WO2000029636A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4336206B2 (en) 2004-01-07 2009-09-30 Hoya株式会社 A method of manufacturing a mask blank, and a mask blank for the production of sputtering target
US7686926B2 (en) 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3790259T1 (en) * 1986-06-11 1988-06-23 Nippon Mining Co., Ltd., Tokio/Tokyo, Jp
US5111355A (en) * 1990-09-13 1992-05-05 National Semiconductor Corp. High value tantalum oxide capacitor
EP0496637A2 (en) * 1991-01-25 1992-07-29 Kabushiki Kaisha Toshiba High purity conductive films and their use in semiconductors
US5707498A (en) * 1996-07-12 1998-01-13 Applied Materials, Inc. Avoiding contamination from induction coil in ionized sputtering
EP0844313A2 (en) * 1996-11-21 1998-05-27 Applied Materials, Inc. Method and apparatus for sputtering in a chamber having an inductively coupled plasma
EP0872572A1 (en) * 1997-04-15 1998-10-21 Japan Energy Corporation Sputtering target and a method for the manufacture thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3790259T1 (en) * 1986-06-11 1988-06-23 Nippon Mining Co., Ltd., Tokio/Tokyo, Jp
US5111355A (en) * 1990-09-13 1992-05-05 National Semiconductor Corp. High value tantalum oxide capacitor
EP0496637A2 (en) * 1991-01-25 1992-07-29 Kabushiki Kaisha Toshiba High purity conductive films and their use in semiconductors
US5707498A (en) * 1996-07-12 1998-01-13 Applied Materials, Inc. Avoiding contamination from induction coil in ionized sputtering
EP0844313A2 (en) * 1996-11-21 1998-05-27 Applied Materials, Inc. Method and apparatus for sputtering in a chamber having an inductively coupled plasma
EP0872572A1 (en) * 1997-04-15 1998-10-21 Japan Energy Corporation Sputtering target and a method for the manufacture thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HASHIMOTO C ET AL: "HIGH QUALITY TA2O5 FILMS USING ULTRA-HIGH PURITY TA SPUTTERING TARGET", JAPANESE JOURNAL OF APPLIED PHYSICS, SUPPLEMENTS,JA,JAPAN SOCIETY OF APPLIED PHYSICS. TOKYO, 20 August 1986 (1986-08-20), pages 253 - 256, XP000097430, ISSN: 0021-4922 *

Also Published As

Publication number Publication date
DE19983727T0 (en)
TW520401B (en) 2003-02-11
WO2000029636A2 (en) 2000-05-25
GB2359825A (en) 2001-09-05
GB0112058D0 (en) 2001-07-11
JP2002530526A (en) 2002-09-17
DE19983727T1 (en) 2002-03-21
WO2000029636A9 (en) 2001-07-19

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