WO2000029636A3 - High purity tantalum targets for sputtering - Google Patents
High purity tantalum targets for sputtering Download PDFInfo
- Publication number
- WO2000029636A3 WO2000029636A3 PCT/US1999/026290 US9926290W WO0029636A3 WO 2000029636 A3 WO2000029636 A3 WO 2000029636A3 US 9926290 W US9926290 W US 9926290W WO 0029636 A3 WO0029636 A3 WO 0029636A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ppm
- weight
- tantalum
- content below
- sputtering
- Prior art date
Links
- 229910052715 tantalum Inorganic materials 0.000 title abstract 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title abstract 4
- 238000004544 sputter deposition Methods 0.000 title 1
- 239000000356 contaminant Substances 0.000 abstract 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 239000010955 niobium Substances 0.000 abstract 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0112058A GB2359825A (en) | 1998-11-12 | 1999-11-05 | Improved tantalum-containing barrier layers for copper using high purity tantalum targets for sputtering |
KR1020017006025A KR20010080437A (en) | 1998-11-12 | 1999-11-05 | High purity tantalum targets for sputtering |
JP2000582614A JP2002530526A (en) | 1998-11-12 | 1999-11-05 | Improved tantalum containing barrier layer for copper using high purity tantalum target for sputtering |
DE19983727T DE19983727T1 (en) | 1998-11-12 | 1999-11-05 | Improved tantalum-containing copper barrier layers using high purity tantalum targets for sputtering |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19107898A | 1998-11-12 | 1998-11-12 | |
US09/191,078 | 1998-11-12 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2000029636A2 WO2000029636A2 (en) | 2000-05-25 |
WO2000029636A3 true WO2000029636A3 (en) | 2000-09-08 |
WO2000029636A9 WO2000029636A9 (en) | 2001-07-19 |
Family
ID=22704050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/026290 WO2000029636A2 (en) | 1998-11-12 | 1999-11-05 | High purity tantalum targets for sputtering |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP2002530526A (en) |
KR (1) | KR20010080437A (en) |
DE (1) | DE19983727T1 (en) |
GB (1) | GB2359825A (en) |
TW (1) | TW520401B (en) |
WO (1) | WO2000029636A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4336206B2 (en) | 2004-01-07 | 2009-09-30 | Hoya株式会社 | Mask blank manufacturing method and mask blank manufacturing sputtering target |
US7686926B2 (en) | 2004-05-26 | 2010-03-30 | Applied Materials, Inc. | Multi-step process for forming a metal barrier in a sputter reactor |
US7211507B2 (en) * | 2004-06-02 | 2007-05-01 | International Business Machines Corporation | PE-ALD of TaN diffusion barrier region on low-k materials |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3790259T1 (en) * | 1986-06-11 | 1988-06-23 | Nippon Mining Co., Ltd., Tokio/Tokyo, Jp | |
US5111355A (en) * | 1990-09-13 | 1992-05-05 | National Semiconductor Corp. | High value tantalum oxide capacitor |
EP0496637A2 (en) * | 1991-01-25 | 1992-07-29 | Kabushiki Kaisha Toshiba | High purity conductive films and their use in semiconductors |
US5707498A (en) * | 1996-07-12 | 1998-01-13 | Applied Materials, Inc. | Avoiding contamination from induction coil in ionized sputtering |
EP0844313A2 (en) * | 1996-11-21 | 1998-05-27 | Applied Materials, Inc. | Method and apparatus for sputtering in a chamber having an inductively coupled plasma |
EP0872572A1 (en) * | 1997-04-15 | 1998-10-21 | Japan Energy Corporation | Sputtering target and a method for the manufacture thereof |
-
1999
- 1999-11-05 DE DE19983727T patent/DE19983727T1/en not_active Withdrawn
- 1999-11-05 GB GB0112058A patent/GB2359825A/en not_active Withdrawn
- 1999-11-05 JP JP2000582614A patent/JP2002530526A/en not_active Withdrawn
- 1999-11-05 WO PCT/US1999/026290 patent/WO2000029636A2/en not_active Application Discontinuation
- 1999-11-05 KR KR1020017006025A patent/KR20010080437A/en not_active Application Discontinuation
- 1999-11-09 TW TW088119605A patent/TW520401B/en active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3790259T1 (en) * | 1986-06-11 | 1988-06-23 | Nippon Mining Co., Ltd., Tokio/Tokyo, Jp | |
US5111355A (en) * | 1990-09-13 | 1992-05-05 | National Semiconductor Corp. | High value tantalum oxide capacitor |
EP0496637A2 (en) * | 1991-01-25 | 1992-07-29 | Kabushiki Kaisha Toshiba | High purity conductive films and their use in semiconductors |
US5707498A (en) * | 1996-07-12 | 1998-01-13 | Applied Materials, Inc. | Avoiding contamination from induction coil in ionized sputtering |
EP0844313A2 (en) * | 1996-11-21 | 1998-05-27 | Applied Materials, Inc. | Method and apparatus for sputtering in a chamber having an inductively coupled plasma |
EP0872572A1 (en) * | 1997-04-15 | 1998-10-21 | Japan Energy Corporation | Sputtering target and a method for the manufacture thereof |
Non-Patent Citations (1)
Title |
---|
HASHIMOTO C ET AL: "HIGH QUALITY TA2O5 FILMS USING ULTRA-HIGH PURITY TA SPUTTERING TARGET", JAPANESE JOURNAL OF APPLIED PHYSICS, SUPPLEMENTS,JA,JAPAN SOCIETY OF APPLIED PHYSICS. TOKYO, 20 August 1986 (1986-08-20), pages 253 - 256, XP000097430, ISSN: 0021-4922 * |
Also Published As
Publication number | Publication date |
---|---|
GB0112058D0 (en) | 2001-07-11 |
GB2359825A (en) | 2001-09-05 |
WO2000029636A9 (en) | 2001-07-19 |
WO2000029636A2 (en) | 2000-05-25 |
JP2002530526A (en) | 2002-09-17 |
DE19983727T1 (en) | 2002-03-21 |
KR20010080437A (en) | 2001-08-22 |
TW520401B (en) | 2003-02-11 |
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