DE19983727T1 - Improved tantalum-containing copper barrier layers using high purity tantalum targets for sputtering - Google Patents

Improved tantalum-containing copper barrier layers using high purity tantalum targets for sputtering

Info

Publication number
DE19983727T1
DE19983727T1 DE19983727T DE19983727T DE19983727T1 DE 19983727 T1 DE19983727 T1 DE 19983727T1 DE 19983727 T DE19983727 T DE 19983727T DE 19983727 T DE19983727 T DE 19983727T DE 19983727 T1 DE19983727 T1 DE 19983727T1
Authority
DE
Germany
Prior art keywords
tantalum
sputtering
high purity
barrier layers
containing copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19983727T
Other languages
German (de)
Inventor
Binxi Sun
Tony Chiang
Vikram Pavate
Peijun Ding
Barry Chin
Arvind Sundarrajan
Ilyoung Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE19983727T1 publication Critical patent/DE19983727T1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising transition metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
DE19983727T 1998-11-12 1999-11-05 Improved tantalum-containing copper barrier layers using high purity tantalum targets for sputtering Withdrawn DE19983727T1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19107898A 1998-11-12 1998-11-12
PCT/US1999/026290 WO2000029636A2 (en) 1998-11-12 1999-11-05 High purity tantalum targets for sputtering

Publications (1)

Publication Number Publication Date
DE19983727T1 true DE19983727T1 (en) 2002-03-21

Family

ID=22704050

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19983727T Withdrawn DE19983727T1 (en) 1998-11-12 1999-11-05 Improved tantalum-containing copper barrier layers using high purity tantalum targets for sputtering

Country Status (6)

Country Link
JP (1) JP2002530526A (en)
KR (1) KR20010080437A (en)
DE (1) DE19983727T1 (en)
GB (1) GB2359825A (en)
TW (1) TW520401B (en)
WO (1) WO2000029636A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4336206B2 (en) 2004-01-07 2009-09-30 Ｈｏｙａ株式会社 Mask blank manufacturing method and mask blank manufacturing sputtering target
US7686926B2 (en) 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
US7211507B2 (en) * 2004-06-02 2007-05-01 International Business Machines Corporation PE-ALD of TaN diffusion barrier region on low-k materials

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0621346B2 (en) * 1986-06-11 1994-03-23 日本鉱業株式会社 Method for manufacturing high-purity metal tantalum target
US5111355A (en) * 1990-09-13 1992-05-05 National Semiconductor Corp. High value tantalum oxide capacitor
DE69233201T2 (en) * 1991-01-25 2004-07-01 Kabushiki Kaisha Toshiba, Kawasaki High-purity conductive films and their application in semiconductor devices
US5707498A (en) * 1996-07-12 1998-01-13 Applied Materials, Inc. Avoiding contamination from induction coil in ionized sputtering
TW358964B (en) * 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
JP3755559B2 (en) * 1997-04-15 2006-03-15 株式会社日鉱マテリアルズ Sputtering target

Also Published As

Publication number Publication date
TW520401B (en) 2003-02-11
KR20010080437A (en) 2001-08-22
WO2000029636A9 (en) 2001-07-19
WO2000029636A3 (en) 2000-09-08
JP2002530526A (en) 2002-09-17
GB2359825A (en) 2001-09-05
GB0112058D0 (en) 2001-07-11
WO2000029636A2 (en) 2000-05-25

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee