WO1987007650A1 - Target made of highly pure metallic tantalum and process for its production - Google Patents

Target made of highly pure metallic tantalum and process for its production Download PDF

Info

Publication number
WO1987007650A1
WO1987007650A1 PCT/JP1987/000365 JP8700365W WO8707650A1 WO 1987007650 A1 WO1987007650 A1 WO 1987007650A1 JP 8700365 W JP8700365 W JP 8700365W WO 8707650 A1 WO8707650 A1 WO 8707650A1
Authority
WO
WIPO (PCT)
Prior art keywords
ppm
metals
target
highly pure
production
Prior art date
Application number
PCT/JP1987/000365
Other languages
French (fr)
Japanese (ja)
Inventor
Iwao Kyono
Hiroshi Hosaka
Seiji Yaegashi
Original Assignee
Nippon Mining Company Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Company Limited filed Critical Nippon Mining Company Limited
Priority to DE19873790259 priority Critical patent/DE3790259C2/en
Publication of WO1987007650A1 publication Critical patent/WO1987007650A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G35/00—Compounds of tantalum
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G35/00—Compounds of tantalum
    • C01G35/006—Compounds containing, besides tantalum, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00—Obtaining refractory metals
    • C22B34/20—Obtaining niobium, tantalum or vanadium
    • C22B34/24—Obtaining niobium or tantalum
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

A target made of highly pure metallic tantalum having only extremely reduced amounts of alkali metals, radioactive elements, transition metals, and high-melting metals harmful for semiconductor devices. The target contains up to 50 ppb (0.05 ppm) of alkali metals, up to 5 ppb (0.005 ppm) of radioactive elements, up to 3 ppm of transistion metals, and up to 3 ppm of high-melting metals. A process for producing the target is also disclosed. It comprises a combination of a wet purifying step mainly involving precipitation of potassium fluorotantalate (K2TaF7) crystals and sodium reduction and a subsequent drying step. Sputtering using this target enables production of a high-quality Ta2O5 insulating film and a metallic Ta electrode film.
PCT/JP1987/000365 1986-06-11 1987-06-09 Target made of highly pure metallic tantalum and process for its production WO1987007650A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19873790259 DE3790259C2 (en) 1986-06-11 1987-06-09 High purity metallic tantalum target and process for its preparation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13380286A JPH0621346B2 (en) 1986-06-11 1986-06-11 Method for manufacturing high-purity metal tantalum target
JP61/133802 1986-06-11

Publications (1)

Publication Number Publication Date
WO1987007650A1 true WO1987007650A1 (en) 1987-12-17

Family

ID=15113375

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1987/000365 WO1987007650A1 (en) 1986-06-11 1987-06-09 Target made of highly pure metallic tantalum and process for its production

Country Status (3)

Country Link
JP (1) JPH0621346B2 (en)
DE (2) DE3790259C2 (en)
WO (1) WO1987007650A1 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0902102A1 (en) * 1997-09-10 1999-03-17 Japan Energy Corporation Ta sputtering targets, method of manufacturing the same, and assemblies
WO2000031310A1 (en) * 1998-11-25 2000-06-02 Cabot Corporation High purity tantalum and products containing the same like sputter targets
US6331233B1 (en) * 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6569270B2 (en) 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US6723187B2 (en) 1999-12-16 2004-04-20 Honeywell International Inc. Methods of fabricating articles and sputtering targets
KR100432284B1 (en) * 2000-08-24 2004-05-22 가부시끼가이샤 도시바 Sputtering target
US6863750B2 (en) 2000-05-22 2005-03-08 Cabot Corporation High purity niobium and products containing the same, and methods of making the same
US6921470B2 (en) 2003-02-13 2005-07-26 Cabot Corporation Method of forming metal blanks for sputtering targets
US7485198B2 (en) * 2001-01-11 2009-02-03 Cabot Corporation Tantalum and niobium billets and methods of producing the same
US7517417B2 (en) 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US8382920B2 (en) 2006-03-07 2013-02-26 Global Advanced Metals, Usa, Inc. Methods of producing deformed metal articles

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6323055B1 (en) * 1998-05-27 2001-11-27 The Alta Group, Inc. Tantalum sputtering target and method of manufacture
KR20010080437A (en) * 1998-11-12 2001-08-22 조셉 제이. 스위니 High purity tantalum targets for sputtering
JP2002363662A (en) * 2001-06-01 2002-12-18 Nikko Materials Co Ltd Method for recovery of high-purity tantalum, high-purity tantalum sputtering target, and thin film deposited by using this sputtering target
US7651306B2 (en) 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US7371022B2 (en) 2004-12-22 2008-05-13 Sokudo Co., Ltd. Developer endpoint detection in a track lithography system
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
US7699021B2 (en) 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
JP5731770B2 (en) * 2010-08-23 2015-06-10 株式会社東芝 Sputtering target manufacturing method and sputtering target
KR101500108B1 (en) * 2013-07-23 2015-03-06 희성금속 주식회사 Tantalum sputtering target with a fine grain size and method of preparing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4956810A (en) * 1972-10-05 1974-06-03
JPS5832010A (en) * 1981-08-20 1983-02-24 Fujitsu Ltd Method for forming metal silicide film
JPS60145304A (en) * 1984-01-09 1985-07-31 Showa Kiyabotsuto Suupaa Metal Kk Manufacture of tantalum powder

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4956810A (en) * 1972-10-05 1974-06-03
JPS5832010A (en) * 1981-08-20 1983-02-24 Fujitsu Ltd Method for forming metal silicide film
JPS60145304A (en) * 1984-01-09 1985-07-31 Showa Kiyabotsuto Suupaa Metal Kk Manufacture of tantalum powder

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6569270B2 (en) 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
EP0902102A1 (en) * 1997-09-10 1999-03-17 Japan Energy Corporation Ta sputtering targets, method of manufacturing the same, and assemblies
KR100512295B1 (en) * 1998-06-17 2005-09-05 존슨 마테이 일렉트로닉스, 인코포레이티드 Metal article with fine uniform structures and textures and process of making same
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6348113B1 (en) 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
EP1496130A1 (en) * 1998-11-25 2005-01-12 Cabot Corporation High purity tantalum for producing sputter targets
WO2000031310A1 (en) * 1998-11-25 2000-06-02 Cabot Corporation High purity tantalum and products containing the same like sputter targets
US6723187B2 (en) 1999-12-16 2004-04-20 Honeywell International Inc. Methods of fabricating articles and sputtering targets
US6878250B1 (en) 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US6331233B1 (en) * 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US7517417B2 (en) 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US7101447B2 (en) 2000-02-02 2006-09-05 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US6863750B2 (en) 2000-05-22 2005-03-08 Cabot Corporation High purity niobium and products containing the same, and methods of making the same
KR100432284B1 (en) * 2000-08-24 2004-05-22 가부시끼가이샤 도시바 Sputtering target
US7485198B2 (en) * 2001-01-11 2009-02-03 Cabot Corporation Tantalum and niobium billets and methods of producing the same
US8231744B2 (en) * 2001-01-11 2012-07-31 Global Advanced Metals, Usa, Inc. Tantalum and niobium billets and methods of producing the same
US6921470B2 (en) 2003-02-13 2005-07-26 Cabot Corporation Method of forming metal blanks for sputtering targets
US8382920B2 (en) 2006-03-07 2013-02-26 Global Advanced Metals, Usa, Inc. Methods of producing deformed metal articles
US8974611B2 (en) 2006-03-07 2015-03-10 Global Advanced Metals, Usa, Inc. Methods of producing deformed metal articles

Also Published As

Publication number Publication date
DE3790259T1 (en) 1988-06-23
DE3790259C2 (en) 1990-02-08
JPS62297463A (en) 1987-12-24
JPH0621346B2 (en) 1994-03-23

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