WO1980000510A1 - Procede pour la fabrication de dispositifs semi-conducteurs - Google Patents
Procede pour la fabrication de dispositifs semi-conducteurs Download PDFInfo
- Publication number
- WO1980000510A1 WO1980000510A1 PCT/DE1979/000097 DE7900097W WO8000510A1 WO 1980000510 A1 WO1980000510 A1 WO 1980000510A1 DE 7900097 W DE7900097 W DE 7900097W WO 8000510 A1 WO8000510 A1 WO 8000510A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- semiconductor material
- semiconductor
- layer
- monocrystalline
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000463 material Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000005855 radiation Effects 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 238000007669 thermal treatment Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
- C23C14/5813—Thermal treatment using lasers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/584—Non-reactive treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to a method for producing semiconductor components with a polycrystalline or monocrystalline semiconductor material layer on a substrate.
- the active semiconductor layer is applied to a substrate that is resistant to high temperatures, since, at least in the case of a monocrystalline semiconductor layer, this layer is applied to the substrate at high temperatures and because both the substrate and the further temperature treatments required for the production of semiconductor components , as well as the active semiconductor layer are heated to a high temperature in an oven.
- the invention has for its object to design the method according to the preamble of claim 1, that the use of high temperature resistant substrates can be dispensed with, ie they can be replaced by less expensive materials.
- substrates can be used which are not resistant to temperatures that are normally required for the application of, in particular, monocrystalline semiconductor material layers.
- the method according to the invention also allows several layers of different doping and / or of different semiconductor material to be applied next to one another in a substrate, in which then semiconductor circuit elements with different properties can be produced.
- a semiconductor material can also be used as the substrate.
- FIG. 1 shows a substrate 1 made of aluminum doped with approximately 1% silicon, onto which an approximately 2 ⁇ m thick amorphous silicon layer 2 is sputtered.
- the layer 2 can also be deposited on the substrate 1 from the gas phase at low temperatures.
- the amorphous silicon layer 2 is then N-doped with arsenic by an ion implantation indicated by the arrow 3.
- an intensive optical radiation is then directed onto the layer 2, which, thanks to a mask 5, remains limited to the two regions 21, in which the amorphous silicon is then locally heated by the optical radiation that it recrystallizes.
- the radiation 4 is then moved over the surface of the regions 21 of the amorphous silicon layer 2 such that e.g. Form stripe-shaped, largely monocrystalline areas.
- semiconductor circuit elements can then be produced by further method steps.
- thermal treatments may be carried out which only heat the areas locally, since otherwise there is a risk that the parts of the layer 2 which have remained amorphous and thus insulating will likewise convert into polycrystalline or monocrystalline and thus conduct the material .
- a substrate 1 made of aluminum with approximately 1% silicon is assumed, onto which approximately 2 ⁇ m thick layer 2 of amorphous silicon, which is weakly doped with boron, that is to say P-conducting, is deposited.
- Arsenic is then introduced into this layer 2, as indicated by the arrow 3, by ion implantation, so that (see FIG. 4) an N + conductive zone 22 is formed on the surface of this layer.
- the amorphous layer 2 is then converted into a polycrystalline silicon layer by an intensive optical radiation indicated by the arrow 4.
- zone 22 then forms a PN junction with the rest of layer 2 and all PN junctions together form the solar cell.
- a thin, radiation-permeable metal layer 6 is then vapor-deposited onto the surface of the layer 2, ie the zone 22.
- the conductive substrate 1 and the metal layer 6 are then provided with connecting conductors 7.
- a pulsed or continuously operated laser can, for example, be used as the source of the intensive optical radiation 3 in the exemplary embodiments described here.
- a locally limited thermal treatment can also be carried out with the aid of a laser if semiconductor circuit elements whose production requires thermal treatment are to be produced in the monocrystalline regions (21, FIG. 2).
- a material should always be used for the substrate 1 which does not yet form an alloy with the amorphous semiconductor material into a polycrystalline or monocrystalline semiconductor material.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thermal Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
- Photovoltaic Devices (AREA)
Abstract
Pour realiser sur un substrat d'un dispositif a semi-conducteur une couche de materiau semi-conducteur (27) poly-ou monocristalline (une couche polycristalline dans le cas par exemple d'une cellule solaire), le materiau est depose sous forme amorphe sur le substrat par exemple vaporise, puis au moyen d'un traitement thermique par un rayonnement optique (4) applique sur le materiau, transforme en une couche poly- ou monocristalline.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19782837750 DE2837750A1 (de) | 1978-08-30 | 1978-08-30 | Verfahhren zum herstellen von halbleiterbauelementen |
DE2837750 | 1978-08-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1980000510A1 true WO1980000510A1 (fr) | 1980-03-20 |
Family
ID=6048211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1979/000097 WO1980000510A1 (fr) | 1978-08-30 | 1979-08-29 | Procede pour la fabrication de dispositifs semi-conducteurs |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0020395A1 (fr) |
DE (1) | DE2837750A1 (fr) |
WO (1) | WO1980000510A1 (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0015677A1 (fr) * | 1979-02-28 | 1980-09-17 | Vlsi Technology Research Association | Procédé de fabrication de dispositifs semiconducteurs |
EP0035561A1 (fr) * | 1979-09-13 | 1981-09-16 | Massachusetts Inst Technology | Procede ameliore de cristallisation de materiau amorphe avec un faisceau d'energie mobile. |
EP0037261A1 (fr) * | 1980-03-27 | 1981-10-07 | Fujitsu Limited | Procédé de fabrication d'un dispositif semiconducteur et dispositif, p. ex. un BOMIS FET, réalisé selon ce procédé |
EP0045551A1 (fr) * | 1980-08-05 | 1982-02-10 | L'Etat belge, représenté par le Secrétaire Général des Services de la Programmation de la Politique Scientifique | Procédé de préparation de films polycristallins semi-conducteurs composés ou élémentaires et films ainsi obtenus |
CN106876270A (zh) * | 2015-12-11 | 2017-06-20 | 英飞凌科技股份有限公司 | 用于形成半导体器件的方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4381201A (en) * | 1980-03-11 | 1983-04-26 | Fujitsu Limited | Method for production of semiconductor devices |
DE3816256A1 (de) * | 1988-05-11 | 1989-11-23 | Siemens Ag | Verfahren zum herstellen einer aus einem ersten halbleitermaterial bestehenden einkristallinen schicht auf einem substrat aus einem andersartigen zweiten halbleitermaterial und verwendung der anordnung zur herstellung von optoelektronischen integrierten schaltungen |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1933690A1 (de) * | 1968-10-18 | 1970-04-30 | Ibm | Verfahren zur Erzeugung von Einkristallen auf Traegersubstraten |
FR2212177A1 (fr) * | 1972-12-29 | 1974-07-26 | Ibm | |
US3853648A (en) * | 1972-08-14 | 1974-12-10 | Material Sciences Corp | Process for forming a metal oxide pattern |
US4059461A (en) * | 1975-12-10 | 1977-11-22 | Massachusetts Institute Of Technology | Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof |
FR2390004A1 (en) * | 1977-05-04 | 1978-12-01 | Commissariat Energie Atomique | Semiconductors, such as bipolar transistors - with amorphous layers locally crystallised by e.g. laser to reduce number of mfg. operations |
-
1978
- 1978-08-30 DE DE19782837750 patent/DE2837750A1/de not_active Withdrawn
-
1979
- 1979-08-29 WO PCT/DE1979/000097 patent/WO1980000510A1/fr unknown
-
1980
- 1980-03-25 EP EP79901089A patent/EP0020395A1/fr not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1933690A1 (de) * | 1968-10-18 | 1970-04-30 | Ibm | Verfahren zur Erzeugung von Einkristallen auf Traegersubstraten |
US3853648A (en) * | 1972-08-14 | 1974-12-10 | Material Sciences Corp | Process for forming a metal oxide pattern |
FR2212177A1 (fr) * | 1972-12-29 | 1974-07-26 | Ibm | |
US4059461A (en) * | 1975-12-10 | 1977-11-22 | Massachusetts Institute Of Technology | Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof |
FR2390004A1 (en) * | 1977-05-04 | 1978-12-01 | Commissariat Energie Atomique | Semiconductors, such as bipolar transistors - with amorphous layers locally crystallised by e.g. laser to reduce number of mfg. operations |
Non-Patent Citations (1)
Title |
---|
IBM Technical Disclosure Bulletin, Band 19, Nr. 11, herausgegeben April 1977, Armonk New York (US) P.S. HO: "Multibeam method for growing large-grain semiconductor films", siehe Seiten 4438-4440. * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0015677A1 (fr) * | 1979-02-28 | 1980-09-17 | Vlsi Technology Research Association | Procédé de fabrication de dispositifs semiconducteurs |
EP0035561A1 (fr) * | 1979-09-13 | 1981-09-16 | Massachusetts Inst Technology | Procede ameliore de cristallisation de materiau amorphe avec un faisceau d'energie mobile. |
EP0035561A4 (fr) * | 1979-09-13 | 1984-08-08 | Massachusetts Inst Technology | Procede ameliore de cristallisation de materiau amorphe avec un faisceau d'energie mobile. |
EP0037261A1 (fr) * | 1980-03-27 | 1981-10-07 | Fujitsu Limited | Procédé de fabrication d'un dispositif semiconducteur et dispositif, p. ex. un BOMIS FET, réalisé selon ce procédé |
EP0045551A1 (fr) * | 1980-08-05 | 1982-02-10 | L'Etat belge, représenté par le Secrétaire Général des Services de la Programmation de la Politique Scientifique | Procédé de préparation de films polycristallins semi-conducteurs composés ou élémentaires et films ainsi obtenus |
CN106876270A (zh) * | 2015-12-11 | 2017-06-20 | 英飞凌科技股份有限公司 | 用于形成半导体器件的方法 |
CN106876270B (zh) * | 2015-12-11 | 2020-06-30 | 英飞凌科技股份有限公司 | 用于形成半导体器件的方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0020395A1 (fr) | 1981-01-07 |
DE2837750A1 (de) | 1980-03-13 |
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