WO1980000510A1 - Method for producing semi-conductor devices - Google Patents

Method for producing semi-conductor devices Download PDF

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Publication number
WO1980000510A1
WO1980000510A1 PCT/DE1979/000097 DE7900097W WO8000510A1 WO 1980000510 A1 WO1980000510 A1 WO 1980000510A1 DE 7900097 W DE7900097 W DE 7900097W WO 8000510 A1 WO8000510 A1 WO 8000510A1
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WO
WIPO (PCT)
Prior art keywords
characterized
substrate
semiconductor material
method according
material
Prior art date
Application number
PCT/DE1979/000097
Other languages
German (de)
French (fr)
Inventor
H Schaumburg
Original Assignee
Philips Patentverwaltung
H Schaumburg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE2837750 priority Critical
Priority to DE19782837750 priority patent/DE2837750A1/en
Application filed by Philips Patentverwaltung, H Schaumburg filed Critical Philips Patentverwaltung
Publication of WO1980000510A1 publication Critical patent/WO1980000510A1/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/16Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5806Thermal treatment
    • C23C14/5813Thermal treatment using lasers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/584Non-reactive treatment
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00Single-crystal growth directly from the solid state
    • C30B1/02Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

To provide onto a substrate of a semi-conductor device a poly or monocrystalline layer of semiconductor material (27) (a polycrystalline layer in the case of solar cells for example), the material is deposited in an amorphous form onto the substrate, vaporised for example, and by means of a thermal treatment by optical radiation (4) applied onto the material, transformed into a poly or monocrystalline layer.

Description

A method of manufacturing semiconductor devices

The invention relates to a method for the manufacture of semiconductor devices having a poly- or monocrystalline semiconductor material layer on a substrate.

So far, was a prerequisite of semiconductor technology that the active semiconductor layer deposited on a high temperature resistant substrate, there is applied at least in a monocrystalline semiconductor layer, this layer at high temperatures to the substrate and as required in the other for the production of semiconductor devices, thermal treatments both the substrate as well as the active semiconductor layer are heated in a furnace to a high temperature.

This has required as substrates high temperature resistant materials, how to use the semiconductor material itself or as sapphire. However, these are relatively expensive materials.

The object underlying the invention is to design the method according to the preamble of claim 1 so that it can be dispensed with the use of high temperature resistant substrates, that is, they can be replaced by cheaper materials.

This object is achieved by the features specified in the characterizing part of claim 1.

Further developments of the invention result from the subclaims.

With the method according to the invention it is achieved that substrates may be used which are not resistant to temperatures that are normally required for the application of, in particular monocrystalline semiconductor material layers.

However, the method according to the invention also makes it possible, on a substrate next to each other to apply several differently doped and / or made of different Haϊbleitermaterial layers, in which then the semiconductor circuit elements of different properties can be produced. In this case, also a semiconductor material may be used as the substrate.

Two embodiments of the invention will be explained with reference to the accompanying drawings. In the drawings: Fig 1 + 2 sections through a semiconductor body having two adjacent, mutually insulated monocrystalline regions on a substrate during successive stages of its manufacture and Figures 3-5 are sections through a solar cell having an active polycrystalline layer on a non-crystalline substrate while.. aufein other following stages of their manufacture.

Fig. 1 shows a substrate 1 made of silicon doped with about 1% of aluminum to which an about 2 m thick amorphous silicon layer 2 is applied by sputtering.

However, the layer 2 can be deposited at low temperatures from the gas phase on the substrate. 1

The amorphous silicon layer 2 is then N-doped by an indicated by the arrow 3 ion implantation with arsenic.

As indicated in Fig. 2 by the arrows 4, is then directed to the layer 2 an intense optical radiation, which is limited thanks to a mask 5 on the two areas 21, in which then the amorphous silicon is heated until locally by the optical radiation that it recrystallized. As indicated by the horizontal arrows, the radiation 4 is then moved over the surface of regions 21 of the amorphous silicon layer 2 that are formed, for example, strip-shaped, substantially monocrystalline regions.

In these areas of monocrystalline silicon having a thickness of 2 microns on a substrate 1 made of aluminum semiconductor circuit elements can then be produced by further process steps. However, only thermal treatments may To produce this semiconductor circuit elements then be performed, the regions only locally heated, as otherwise there is a risk that the amorphous and insulating remaining portions of the layer 2 also convert to poly- or monocrystalline, derive the material , It is also possible to deposit the amorphous semiconductor material in the openings a coating applied to the substrate insulating layer and then convert them in a substantially monocrystalline material. In this case, or in the above described with reference to FIGS. 1 and 2 method can of course also a plurality of layers of amorphous, optionally varied, semiconductor materials are successively applied and converted into certain areas in polycrystalline or substantially monocrystalline material.

Referring to Figs. 3 to 5 the manufacture of a solar cell will now be described. Here, too, it is assumed that a substrate 1 made of aluminum with about 1% of silicon, is deposited on the about 2 microns thick layer 2 of lightly doped with boron, that is P-type amorphous silicon. In this layer 2 is then, as indicated by the arrow 3, introduced by ion implantation of arsenic, so that (see Fig. 4) is formed at the surface of this layer an N + conductive region 22.

Then is converted by a, by the arrow 4 indicated intense optical radiation, the amorphous layer 2 in a polycrystalline silicon layer. In the individual, in FIG. 4 with an exaggerated size indicated crystals of this polycrystalline layer, the zone 22 to the rest of the layer then forms 2 each have a PN junction, and all the PN junctions along the solar battery. For this purpose, then as shown in Fig. 5, that is deposited on the surface of the layer 2, the zone 22, even a thin, radiation transmissive metal layer 6 for contacting. The conductive substrate 1 and the metal layer 6 are then provided with connection conductors. 7 As a source of intense optical radiation 3 in the embodiments described herein, for example, a pulsed or continuously operated laser may be used.

Using a laser, a localized thermal treatment may be performed when in the monocrystalline regions (21, Fig. 2) of the first embodiment semiconductor circuit elements are to be produced, their production requires a thermal treatment.

For the substrate 1, a material should be used always, which forms at the transition temperature of the amorphous semiconductor material in a polycrystalline or monocrystalline semiconductor material with this alloy no.

Claims

claims:
1. A method for the manufacture of semiconductor devices having a poly- or monocrystalline semiconductor material lschicht on a substrate, characterized in that the semiconductor material is deposited in amorphous form on the substrate and by a thermal treatment by means of a directed onto the material intense optical radiation in poly- or mono-crystalline material is converted.
2. The method according to claim 1, characterized in that the semiconductor material is placed on the substrate is sputtered.
3. The method of claim 1 or 2, characterized in that a substrate is used of a semiconducting material.
4. The method of claim 1 or 3, characterized in that a plurality of differently doped to the substrate side by side and / or from different
Semiconductor material, existing layers be applied.
5. The method of claim 3 or 4, marked thereby characterized, that the semiconductor material is deposited in openings in a layer applied to the substrate insulating layer.
6. The method according to any one of the preceding claims, characterized in that several layers are applied one above the other.
7. The method according to claim 1, characterized in that a substrate is used of a material, which still does not alloy at the transition temperature with the semiconductor material.
8. Application of the method according to claim 7 for producing a solar cell.
9. A method according to any one of claims 1 to 7, characterized in that the radiation of a laser is used as the intensive optical radiation.
10. The method according to any one of the preceding claims for generating a substantially monocrystalline semiconductor layer on a substrate, characterized in that first the amorphous semiconductor material is heated until locally by the optical Strahlurg that it recrystallizes, and then the radiation is moved across the surface of the semiconductor material that, for example, strip-shaped, substantially monocrystalline regions form.
11. The method according to claim 10, characterized in that semiconductor circuit elements are formed in these areas.
12. The method according to any one of the preceding claims, characterized ennzeichnet GEK that silicon is used as semiconductor material.
PCT/DE1979/000097 1978-08-30 1979-08-29 Method for producing semi-conductor devices WO1980000510A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE2837750 1978-08-30
DE19782837750 DE2837750A1 (en) 1978-08-30 1978-08-30 Verfahhren for the manufacture of semiconductor devices

Publications (1)

Publication Number Publication Date
WO1980000510A1 true WO1980000510A1 (en) 1980-03-20

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ID=6048211

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1979/000097 WO1980000510A1 (en) 1978-08-30 1979-08-29 Method for producing semi-conductor devices

Country Status (3)

Country Link
EP (1) EP0020395A1 (en)
DE (1) DE2837750A1 (en)
WO (1) WO1980000510A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015677A1 (en) * 1979-02-28 1980-09-17 Vlsi Technology Research Association Method of producing semiconductor devices
EP0035561A1 (en) * 1979-09-13 1981-09-16 Massachusetts Inst Technology Improved method of crystallizing amorphous material with a moving energy beam.
EP0037261A1 (en) * 1980-03-27 1981-10-07 Fujitsu Limited A method of manufacturing a semiconductor device, and a device, for example a BOMIS FET, so manufactured
EP0045551A1 (en) * 1980-08-05 1982-02-10 L'Etat belge, représenté par le Secrétaire Général des Services de la Programmation de la Politique Scientifique Process for the manufacture of polycrystalline films of semiconductors formed by compounds or elements, and films thus obtained

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4381201A (en) * 1980-03-11 1983-04-26 Fujitsu Limited Method for production of semiconductor devices
DE3816256A1 (en) * 1988-05-11 1989-11-23 Siemens Ag Method for preparing a monocrystalline layer, consisting of a first semiconducting material, on a substrate composed of a different-type second semiconducting material, and use of the arrangement for fabricating optoelectronic integrated circuits

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1933690A1 (en) * 1968-10-18 1970-04-30 Ibm A process for the production of single crystals on Traegersubstraten
FR2212177A1 (en) * 1972-12-29 1974-07-26 Ibm
US3853648A (en) * 1972-08-14 1974-12-10 Material Sciences Corp Process for forming a metal oxide pattern
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
FR2390004A1 (en) * 1977-05-04 1978-12-01 Commissariat Energie Atomique Semiconductors, such as bipolar transistors - with amorphous layers locally crystallised by e.g. laser to reduce number of mfg. operations

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1933690A1 (en) * 1968-10-18 1970-04-30 Ibm A process for the production of single crystals on Traegersubstraten
US3853648A (en) * 1972-08-14 1974-12-10 Material Sciences Corp Process for forming a metal oxide pattern
FR2212177A1 (en) * 1972-12-29 1974-07-26 Ibm
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
FR2390004A1 (en) * 1977-05-04 1978-12-01 Commissariat Energie Atomique Semiconductors, such as bipolar transistors - with amorphous layers locally crystallised by e.g. laser to reduce number of mfg. operations

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM Technical Disclosure Bulletin, Band 19, Nr. 11, herausgegeben April 1977, Armonk New York (US) P.S. HO: "Multibeam method for growing large-grain semiconductor films", siehe Seiten 4438-4440. *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015677A1 (en) * 1979-02-28 1980-09-17 Vlsi Technology Research Association Method of producing semiconductor devices
EP0035561A1 (en) * 1979-09-13 1981-09-16 Massachusetts Inst Technology Improved method of crystallizing amorphous material with a moving energy beam.
EP0035561A4 (en) * 1979-09-13 1984-08-08 Massachusetts Inst Technology Improved method of crystallizing amorphous material with a moving energy beam.
EP0037261A1 (en) * 1980-03-27 1981-10-07 Fujitsu Limited A method of manufacturing a semiconductor device, and a device, for example a BOMIS FET, so manufactured
EP0045551A1 (en) * 1980-08-05 1982-02-10 L'Etat belge, représenté par le Secrétaire Général des Services de la Programmation de la Politique Scientifique Process for the manufacture of polycrystalline films of semiconductors formed by compounds or elements, and films thus obtained

Also Published As

Publication number Publication date
EP0020395A1 (en) 1981-01-07
DE2837750A1 (en) 1980-03-13

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