WO1979000302A1 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- WO1979000302A1 WO1979000302A1 PCT/JP1978/000004 JP7800004W WO7900302A1 WO 1979000302 A1 WO1979000302 A1 WO 1979000302A1 JP 7800004 W JP7800004 W JP 7800004W WO 7900302 A1 WO7900302 A1 WO 7900302A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor element
- metal plate
- semiconductor device
- loaded
- ceramic substrate
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19782857170 DE2857170A1 (de) | 1977-11-18 | 1978-10-02 | Semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13848677A JPS5471572A (en) | 1977-11-18 | 1977-11-18 | Semiconductor device |
JP77/138486 | 1977-11-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1979000302A1 true WO1979000302A1 (en) | 1979-05-31 |
Family
ID=15223207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1978/000004 WO1979000302A1 (en) | 1977-11-18 | 1978-10-02 | Semiconductor device |
Country Status (3)
Country | Link |
---|---|
US (1) | US4340902A (ja) |
JP (1) | JPS5471572A (ja) |
WO (1) | WO1979000302A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0081419A2 (en) * | 1981-12-03 | 1983-06-15 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | High lead count hermetic mass bond integrated circuit carrier |
DE3300693A1 (de) * | 1982-02-05 | 1983-09-22 | Hitachi, Ltd., Tokyo | Halbleiteranordnung und verfahren zu ihrer herstellung |
US4899208A (en) * | 1987-12-17 | 1990-02-06 | International Business Machines Corporation | Power distribution for full wafer package |
US4907067A (en) * | 1988-05-11 | 1990-03-06 | Texas Instruments Incorporated | Thermally efficient power device package |
US5811876A (en) * | 1995-04-27 | 1998-09-22 | Nec Corporation | Semiconductor device with film carrier package structure |
Families Citing this family (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4577214A (en) * | 1981-05-06 | 1986-03-18 | At&T Bell Laboratories | Low-inductance power/ground distribution in a package for a semiconductor chip |
JPS6038867B2 (ja) * | 1981-06-05 | 1985-09-03 | 株式会社日立製作所 | 絶縁型半導体装置 |
JPS58188145A (ja) * | 1982-04-28 | 1983-11-02 | Fujitsu Ltd | 半導体装置 |
JPS58169943A (ja) * | 1982-03-29 | 1983-10-06 | Fujitsu Ltd | 半導体装置 |
US4611238A (en) * | 1982-05-05 | 1986-09-09 | Burroughs Corporation | Integrated circuit package incorporating low-stress omnidirectional heat sink |
JPS5921032A (ja) * | 1982-07-26 | 1984-02-02 | Sumitomo Electric Ind Ltd | 半導体装置用基板 |
JPS5977231U (ja) * | 1982-11-16 | 1984-05-25 | 京セラ株式会社 | 半導体装置 |
US4646131A (en) * | 1983-01-28 | 1987-02-24 | Mitsubishi Denki Kabushiki Kaisha | Rectifier device |
US4513355A (en) * | 1983-06-15 | 1985-04-23 | Motorola, Inc. | Metallization and bonding means and method for VLSI packages |
DE3476297D1 (en) * | 1983-12-28 | 1989-02-23 | Hughes Aircraft Co | Flat package for integrated circuit memory chips |
EP0180906B1 (de) * | 1984-11-02 | 1989-01-18 | Siemens Aktiengesellschaft | Wellenwiderstandsgetreuer Chipträger für Mikrowellenhalbleiter |
US4712161A (en) * | 1985-03-25 | 1987-12-08 | Olin Corporation | Hybrid and multi-layer circuitry |
JPS61288451A (ja) * | 1985-06-17 | 1986-12-18 | Toshiba Corp | 集積回路用パツケ−ジの入出力ピンの配置構造 |
JPH0777247B2 (ja) * | 1986-09-17 | 1995-08-16 | 富士通株式会社 | 半導体装置の製造方法 |
EP0266210B1 (en) * | 1986-10-29 | 1993-02-17 | Kabushiki Kaisha Toshiba | Electronic apparatus comprising a ceramic substrate |
DE3703873A1 (de) * | 1987-02-07 | 1988-08-18 | Sueddeutsche Kuehler Behr | Kuehlkoerper, insbesondere zum kuehlen elektronischer bauelemente |
JPH02502322A (ja) * | 1987-02-19 | 1990-07-26 | オリン コーポレーション | プラスチック製のピングリッドアレイを製作する方法及びそれにより生産される製品 |
US4965227A (en) * | 1987-05-21 | 1990-10-23 | Olin Corporation | Process for manufacturing plastic pin grid arrays and the product produced thereby |
US5144412A (en) * | 1987-02-19 | 1992-09-01 | Olin Corporation | Process for manufacturing plastic pin grid arrays and the product produced thereby |
US5191224A (en) * | 1987-04-22 | 1993-03-02 | Hitachi, Ltd. | Wafer scale of full wafer memory system, packaging method thereof, and wafer processing method employed therein |
JPH0610695Y2 (ja) * | 1987-09-24 | 1994-03-16 | 京セラ株式会社 | 半導体素子収納用パッケージ |
US5299730A (en) * | 1989-08-28 | 1994-04-05 | Lsi Logic Corporation | Method and apparatus for isolation of flux materials in flip-chip manufacturing |
US5227663A (en) * | 1989-12-19 | 1993-07-13 | Lsi Logic Corporation | Integral dam and heat sink for semiconductor device assembly |
US5175612A (en) * | 1989-12-19 | 1992-12-29 | Lsi Logic Corporation | Heat sink for semiconductor device assembly |
US5008734A (en) * | 1989-12-20 | 1991-04-16 | National Semiconductor Corporation | Stadium-stepped package for an integrated circuit with air dielectric |
US5159750A (en) * | 1989-12-20 | 1992-11-03 | National Semiconductor Corporation | Method of connecting an IC component with another electrical component |
US5399903A (en) * | 1990-08-15 | 1995-03-21 | Lsi Logic Corporation | Semiconductor device having an universal die size inner lead layout |
US5168344A (en) * | 1990-08-15 | 1992-12-01 | W. R. Grace & Co. Conn. | Ceramic electronic package design |
JPH04164361A (ja) * | 1990-10-29 | 1992-06-10 | Nec Corp | 樹脂封止型半導体装置 |
US5107328A (en) * | 1991-02-13 | 1992-04-21 | Micron Technology, Inc. | Packaging means for a semiconductor die having particular shelf structure |
US5256902A (en) * | 1991-08-14 | 1993-10-26 | Vlsi Technology, Inc. | Metal heatsink attach system |
US5172301A (en) * | 1991-10-08 | 1992-12-15 | Lsi Logic Corporation | Heatsink for board-mounted semiconductor devices and semiconductor device assembly employing same |
US5434750A (en) * | 1992-02-07 | 1995-07-18 | Lsi Logic Corporation | Partially-molded, PCB chip carrier package for certain non-square die shapes |
US5293930A (en) * | 1992-09-24 | 1994-03-15 | Hewlett-Packard Company | Surface-to-air heat exchanger for electronic devices |
US5325268A (en) * | 1993-01-28 | 1994-06-28 | National Semiconductor Corporation | Interconnector for a multi-chip module or package |
US5596171A (en) * | 1993-05-21 | 1997-01-21 | Harris; James M. | Package for a high frequency semiconductor device and methods for fabricating and connecting the same to an external circuit |
US5665649A (en) * | 1993-05-21 | 1997-09-09 | Gardiner Communications Corporation | Process for forming a semiconductor device base array and mounting semiconductor devices thereon |
US5396403A (en) * | 1993-07-06 | 1995-03-07 | Hewlett-Packard Company | Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate |
US5773886A (en) * | 1993-07-15 | 1998-06-30 | Lsi Logic Corporation | System having stackable heat sink structures |
US5654587A (en) * | 1993-07-15 | 1997-08-05 | Lsi Logic Corporation | Stackable heatsink structure for semiconductor devices |
US5438477A (en) * | 1993-08-12 | 1995-08-01 | Lsi Logic Corporation | Die-attach technique for flip-chip style mounting of semiconductor dies |
US5388327A (en) * | 1993-09-15 | 1995-02-14 | Lsi Logic Corporation | Fabrication of a dissolvable film carrier containing conductive bump contacts for placement on a semiconductor device package |
US5693981A (en) * | 1993-12-14 | 1997-12-02 | Lsi Logic Corporation | Electronic system with heat dissipating apparatus and method of dissipating heat in an electronic system |
US5514327A (en) * | 1993-12-14 | 1996-05-07 | Lsi Logic Corporation | Powder metal heat sink for integrated circuit devices |
US5451818A (en) * | 1994-03-18 | 1995-09-19 | Trw Inc. | Millimeter wave ceramic package |
FR2721437B1 (fr) * | 1994-06-17 | 1996-09-27 | Xeram N | Boîtier hermétique à dissipation thermique améliorée notamment pour l'encapsulation de composants ou circuits électroniques et procédé de fabrication. |
JP2853599B2 (ja) * | 1995-03-10 | 1999-02-03 | 日本電気株式会社 | 半導体装置の製造方法 |
SE506348C2 (sv) * | 1996-04-01 | 1997-12-08 | Tetra Laval Holdings & Finance | Förpackningsmaterialbana för en självbärande förpackningsbehållarvägg jämte av banan tillverkad förpackningsbehållare |
US5920458A (en) * | 1997-05-28 | 1999-07-06 | Lucent Technologies Inc. | Enhanced cooling of a heat dissipating circuit element |
DE69728153D1 (de) * | 1997-12-16 | 2004-04-22 | St Microelectronics Srl | Leiterplattenanordnung bestehend aus einem in einem Kunststoffgehäuse verpackten Leistungshalbleiterbauelement, dessen interne Wärmesenke mit einer externen Wärmesenke gelötet ist |
US6507998B1 (en) * | 1998-03-05 | 2003-01-21 | Tektronix, Inc. | Method of mounting an electrical receptacle on a substrate |
US6199625B1 (en) | 1999-06-11 | 2001-03-13 | Psc Computer Products, Inc. | Stackable heat sink for electronic components |
GB2354116B (en) * | 1999-09-10 | 2003-12-03 | Llanelli Radiators Ltd | Assembly for electrical/electronic components |
JP3634735B2 (ja) * | 2000-10-05 | 2005-03-30 | 三洋電機株式会社 | 半導体装置および半導体モジュール |
US7891836B2 (en) * | 2004-10-22 | 2011-02-22 | Koninklijke Philips Electronics N.V. | Semiconductor light-emitting device with improved heatsinking |
JP4608409B2 (ja) * | 2005-10-19 | 2011-01-12 | 株式会社住友金属エレクトロデバイス | 高放熱型電子部品収納用パッケージ |
US7898077B2 (en) * | 2009-02-12 | 2011-03-01 | Honeywell International Inc. | Adjustable threaded cores for LED thermal management |
TWM401727U (en) * | 2010-08-05 | 2011-04-11 | Jade Yang Co Ltd | LED bulb |
US8929077B2 (en) | 2012-01-02 | 2015-01-06 | Tem Products Inc. | Thermal connector |
US9137925B2 (en) * | 2013-05-08 | 2015-09-15 | Hamilton Sundstrand Corporation | Heat sink for contactor in power distribution assembly |
US9484280B2 (en) * | 2014-01-11 | 2016-11-01 | Infineon Technologies Austria Ag | Semiconductor device and method of manufacturing a semiconductor device |
DE102014114097B4 (de) | 2014-09-29 | 2017-06-01 | Danfoss Silicon Power Gmbh | Sinterwerkzeug und Verfahren zum Sintern einer elektronischen Baugruppe |
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JP2016174094A (ja) * | 2015-03-17 | 2016-09-29 | 住友電工デバイス・イノベーション株式会社 | 半導体組立体 |
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US10374387B2 (en) * | 2017-11-10 | 2019-08-06 | Finisar Corporation | High power cavity package for light emitters |
TWI764256B (zh) * | 2020-08-28 | 2022-05-11 | 朋程科技股份有限公司 | 智慧功率模組封裝結構 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS48108564U (ja) * | 1972-03-13 | 1973-12-14 | ||
US3829598A (en) * | 1972-09-25 | 1974-08-13 | Hutson Ind Inc | Copper heat sinks for electronic devices and method of making same |
JPS5128960U (ja) * | 1974-08-26 | 1976-03-02 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3223903A (en) * | 1961-02-24 | 1965-12-14 | Hughes Aircraft Co | Point contact semiconductor device with a lead having low effective ratio of length to diameter |
US3265805A (en) * | 1964-02-03 | 1966-08-09 | Power Components Inc | Semiconductor power device |
US3460002A (en) * | 1965-09-29 | 1969-08-05 | Microwave Ass | Semiconductor diode construction and mounting |
US3399332A (en) * | 1965-12-29 | 1968-08-27 | Texas Instruments Inc | Heat-dissipating support for semiconductor device |
US3492586A (en) * | 1966-09-22 | 1970-01-27 | Honeywell Inc | Control apparatus |
JPS5128960B1 (ja) * | 1970-02-05 | 1976-08-23 | ||
JPS5228547B2 (ja) * | 1972-07-10 | 1977-07-27 | ||
US3946428A (en) * | 1973-09-19 | 1976-03-23 | Nippon Electric Company, Limited | Encapsulation package for a semiconductor element |
JPS5128960A (ja) * | 1974-09-04 | 1976-03-11 | Seiko Instr & Electronics | Handoringusochi |
US3999285A (en) * | 1975-06-30 | 1976-12-28 | Burroughs Corporation | Semiconductor device package |
US4025997A (en) * | 1975-12-23 | 1977-05-31 | International Telephone & Telegraph Corporation | Ceramic mounting and heat sink device |
US4227036A (en) * | 1978-09-18 | 1980-10-07 | Microwave Semiconductor Corp. | Composite flanged ceramic package for electronic devices |
-
1977
- 1977-11-18 JP JP13848677A patent/JPS5471572A/ja active Pending
-
1978
- 1978-10-02 WO PCT/JP1978/000004 patent/WO1979000302A1/ja unknown
- 1978-10-02 US US06/128,354 patent/US4340902A/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS48108564U (ja) * | 1972-03-13 | 1973-12-14 | ||
US3829598A (en) * | 1972-09-25 | 1974-08-13 | Hutson Ind Inc | Copper heat sinks for electronic devices and method of making same |
JPS5128960U (ja) * | 1974-08-26 | 1976-03-02 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0081419A2 (en) * | 1981-12-03 | 1983-06-15 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | High lead count hermetic mass bond integrated circuit carrier |
EP0081419A3 (en) * | 1981-12-03 | 1985-05-15 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | High lead count hermetic mass bond integrated circuit carrier |
DE3300693A1 (de) * | 1982-02-05 | 1983-09-22 | Hitachi, Ltd., Tokyo | Halbleiteranordnung und verfahren zu ihrer herstellung |
US4899208A (en) * | 1987-12-17 | 1990-02-06 | International Business Machines Corporation | Power distribution for full wafer package |
US4907067A (en) * | 1988-05-11 | 1990-03-06 | Texas Instruments Incorporated | Thermally efficient power device package |
US5811876A (en) * | 1995-04-27 | 1998-09-22 | Nec Corporation | Semiconductor device with film carrier package structure |
Also Published As
Publication number | Publication date |
---|---|
JPS5471572A (en) | 1979-06-08 |
US4340902A (en) | 1982-07-20 |
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