US9837447B2 - Thin film transistor array panel and manufacturing method thereof - Google Patents

Thin film transistor array panel and manufacturing method thereof Download PDF

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Publication number
US9837447B2
US9837447B2 US14/281,182 US201414281182A US9837447B2 US 9837447 B2 US9837447 B2 US 9837447B2 US 201414281182 A US201414281182 A US 201414281182A US 9837447 B2 US9837447 B2 US 9837447B2
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contact hole
thin film
film transistor
electrode
transistor array
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US20150123113A1 (en
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Seung Hyun Park
Jun Ho Song
Jean Ho SONG
Jae hak Lee
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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Assigned to SAMSUNG DISPLAY CO., LTD. reassignment SAMSUNG DISPLAY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LEE, JAE HAK, PARK, SEUNG HYUN, SONG, JEAN HO, SONG, JUN HO
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78636—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with supplementary region or layer for improving the flatness of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO

Definitions

  • Exemplary embodiments of the invention relate to a thin film transistor array panel and a method of manufacturing the thin film transistor array panel.
  • a liquid crystal display which is one of the most common types of flat panel displays currently in use, typically includes two display panels with field generating electrodes, such as a pixel electrode and a common electrode, and a liquid crystal layer interposed therebetween.
  • the liquid crystal display generates an electric field in a liquid crystal layer by applying voltage to the field generating electrodes, determines the direction of liquid crystal molecules of the liquid crystal layer, and controls polarization of incident light through the generated electric field to display images.
  • all of the two field generating electrodes generating the electric field in the liquid crystal layer may be disposed in a thin film transistor array panel.
  • a plurality of insulating layers is disposed between the thin film transistor and the field generating electrodes, and at least one layer among the plurality of insulating layers may use an organic insulating layer.
  • Contact holes for electrically connecting the thin film transistor and the field generating electrodes are typically formed in the plurality of insulating layer.
  • the invention has been made in an effort to effectively prevent a thin film transistor array panel from being short circuited through adjusting positions at which contact holes are formed, and to improve stability of a display device including the thin film transistor array panel.
  • An exemplary embodiment of the invention provides a thin film transistor array panel, including: an insulating substrate; a gate line disposed on the insulating substrate and including a gate pad portion; a data line insulated from and crossing the gate line, and including a source electrode and a data pad portion; a drain electrode facing the source electrode; an organic insulating layer disposed on the data line and the drain electrode, where a first contact hole is defined through the organic insulating layer; a common electrode disposed on the organic insulating layer, where a second contact hole is defined through the common electrode; a passivation layer disposed on the common electrode, where a third contact hole is defined through the passivation layer; and a pixel electrode disposed on the passivation layer, and in contact with the drain electrode, in which the third contact hole is disposed to be adjacent to one surface of the first contact hole.
  • the first contact hole may be smaller than the second contact hole
  • the third contact hole may be smaller than the second contact hole
  • a portion of the third contact hole may overlap the drain electrode
  • the third contact hole may expose one end of the drain electrode.
  • a surface of the third contact hole may partially overlap the organic insulating layer.
  • a distance between one surface of the third contact hole, which does not overlap the organic insulating layer, and a surface of the first contact hole facing the one surface of the third contact hole, and a distance between a remaining surface of the third contact hole and a surface of the first contact hole facing the remaining surface of the third contact hole may satisfy the following inequation: A>1.2 ⁇ B, where A denotes the distance between the one surface of the third contact hole and the surface of the first contact hole facing the one surface of the third contact hole, and B denotes the distance between the remaining surface of the third contact hole and the surface of the first contact hole facing the remaining surface of the third contact hole.
  • the distance between the one surface of the third contact hole and the surface of the first contact hole facing the one surface of the third contact hole may be in a range of about 1 micrometer ( ⁇ m) to about 6 ⁇ m.
  • a length of an overlapping portion of the third contact hole and the drain electrode may be in a range of about 1 ⁇ m to about 6 ⁇ m.
  • three surfaces of the third contact hole may overlap the organic insulating layer.
  • the drain electrode may extend substantially in a direction to partially overlap the organic insulating layer and the common electrode.
  • the third contact hole may be disposed in a direction opposite to the direction in which the drain electrode extends.
  • the pixel electrode may overlap one surface of the third contact hole.
  • a fourth contact hole, through which a portion of the gate pad portion is exposed, may be defined through the organic insulating layer, and a fifth contact hole, through which a portion of the data pad portion is exposed, may be defined through the organic insulating layer.
  • one of the common electrode and the pixel electrode may be a plane-shaped electrode, and the other of the common electrode and the pixel electrode may be a branch electrode.
  • An exemplary embodiment of the invention provides a method of manufacturing a thin film transistor array panel, the method including: providing gate lines and data lines including drain electrodes on an insulating substrate; providing an organic insulating layer, through which a first contact hole is defined, on the gate lines and the data lines; providing a common electrode, through which a second contact hole is defined, on the organic insulating layer; providing a passivation layer on the common electrode; forming a third contact hole through the passivation layer to expose one end of the drain electrode; and providing a pixel electrode on the passivation layer to be in contact with the drain electrode through the third contact hole, in which the third contact hole is formed to be adjacent to one surface of the first contact hole.
  • a surface of the third contact hole may partially overlap the organic insulating layer.
  • a distance between one surface of the third contact hole, which does not overlap the organic insulating layer, and a surface of the first contact hole facing the one surface of the third contact hole, and a distance between a remaining surface of the third contact hole and a surface of the first contact hole facing the remaining surface of the third contact hole may satisfy the following inequation: A>1.2 ⁇ B, where A denotes the distance straight distance between the one surface of the third contact hole and the surface of the first contact hole facing the one surface of the third contact hole, and B denotes the distance between the remaining surface of the third contact hole and the surface of the first contact hole facing the remaining surface of the third contact hole.
  • the distance between the one surface of the third contact hole and the surface of the first contact hole facing the one surface of the third contact hole may be in a range of about 1 ⁇ m to about 6 ⁇ m.
  • a length of an overlapping portion of the third contact hole and the drain electrode may be in a range of about 1 ⁇ m to about 6 ⁇ m.
  • the third contact hole may overlap three surfaces of the organic insulating layer, and the pixel electrode may overlap one surface of the third contact hole.
  • the drain electrode may extend in a direction to partially overlap the organic insulating layer and the common electrode, and the third contact hole may be disposed in a direction opposite to the direction in which the drain electrode extends.
  • a contact hole is formed to allow one side of the contact hole to be in contact with an electrode during a manufacturing process thereof, thereby effectively preventing a short circuit.
  • a width of the light blocking member covering the gate line is decreased according to a position of the contact hole, such that a display device with improved aperture ratio and transmittance may be provided.
  • FIG. 1 is a top plan view of an exemplary embodiment of a thin film transistor array panel, according to the invention.
  • FIG. 2 is a cross-sectional view taken along line II-II′ of FIG. 1 ;
  • FIG. 3 is a cross-sectional view taken along line III-Ill′ of FIG. 1 ;
  • FIG. 4 is a cross-sectional view taken along line IV-IV′ of FIG. 1 ;
  • FIG. 5 is a cross-sectional view take along line V-V of FIG. 1 ;
  • FIG. 6 is a cross-sectional view taken along line VI-VI′ of FIG. 1 ;
  • FIGS. 7A to 10B are views illustrating alternative exemplary embodiments of a contact hole portion in a thin film transistor array panel, according to the invention.
  • FIG. 11 is an image of an exemplary embodiment of the thin film transistor array panel according to the invention.
  • FIG. 12 is an image of a thin film transistor array panel according to a Comparative Example
  • FIG. 13 is a current confirming graph for an exemplary embodiment of the thin film transistor array panel according to the invention and a thin film transistor array panel according to the Comparative Example;
  • FIG. 14 is a current to voltage graph for an exemplary embodiment of the thin film transistor array panel according to the invention and a thin film transistor array panel according to the Comparative Example;
  • FIG. 15 is a current to time graph for an exemplary embodiment of the thin film transistor array panel according to the invention and a thin film transistor array panel according to the Comparative Example.
  • first,” “second,” “third” etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, “a first element,” “component,” “region,” “layer” or “section” discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.
  • relative terms such as “lower” or “bottom” and “upper” or “top,” may be used herein to describe one element's relationship to another element as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. For example, if the device in one of the figures is turned over, elements described as being on the “lower” side of other elements would then be oriented on “upper” sides of the other elements. The exemplary term “lower,” can therefore, encompasses both an orientation of “lower” and “upper,” depending on the particular orientation of the figure.
  • “About” or “approximately” as used herein is inclusive of the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, considering the measurement in question and the error associated with measurement of the particular quantity (i.e., the limitations of the measurement system). For example, “about” can mean within one or more standard deviations, or within ⁇ 30%, 20%, 10%, 5% of the stated value.
  • Exemplary embodiments are described herein with reference to cross section illustrations that are schematic illustrations of idealized embodiments. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region illustrated or described as flat may, typically, have rough and/or nonlinear features. Moreover, sharp angles that are illustrated may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.
  • FIGS. 1 to 6 exemplary embodiments of a thin film transistor array panel, according to the invention, will be described in detail with reference to FIGS. 1 to 6 .
  • FIG. 1 is a top plan view of an exemplary embodiment of a thin film transistor array panel, according to the invention
  • FIG. 2 is a cross-sectional view taken along line II-II′ of FIG. 1
  • FIG. 3 is a cross-sectional view taken along line III-III′ of FIG. 1
  • FIG. 4 is a cross-sectional view taken along line IV-IV′ of FIG. 1
  • FIG. 5 is a cross-sectional view take along line V-V of FIG. 1
  • FIG. 6 is a cross-sectional view taken along line VI-VI′ of FIG. 1 .
  • an exemplary embodiment of a thin film transistor array panel includes an insulating substrate 110 , and a plurality of gate lines 121 disposed on the insulating substrate 110 .
  • Each gate line 121 includes a plurality of gate electrodes 124 protruding upwardly, and a gate pad portion 129 having a wide area for a connection with another layer or an external driving circuit.
  • a gate driving circuit (not illustrated) that generates a gate signal may be disposed, e.g., mounted, on a flexible printed circuit film (not illustrated) that is attached on the insulating substrate 110 or directly mounted on the insulating substrate 110 .
  • the gate line 121 may have a single layer structure, or a multilayer structure including two or more conductive layers.
  • a gate insulating layer 140 is disposed on the gate line 121 .
  • the gate insulating layer 140 may include or be formed of an inorganic insulating material, such as silicon nitride (SiNx) or silicon oxide (SiOx), for example.
  • a plurality of semiconductors 151 is disposed on the gate insulating layer 140 .
  • the semiconductors 151 may include a protrusion 154 .
  • the protrusion 154 may be disposed only on the gate electrode 124 .
  • the semiconductor 151 may include or be formed of amorphous silicon, polysilicon, an oxide semiconductor or a combination thereof.
  • the semiconductor 151 includes an end portion 159 disposed under a data pad portion 179 .
  • a plurality of ohmic contacts 161 , 163 , 165 and 169 is disposed on the semiconductor 151 .
  • the ohmic contacts 163 and 165 may be provided as a pair while facing each other based on the gate electrode 124 to be disposed on the protrusion 154 of the semiconductor 151 .
  • the ohmic contact 169 is disposed under the data pad portion 179 .
  • the ohmic contacts 161 , 163 , 165 and 169 may include or be made of a material, such as n+ hydrogenated amorphous silicon on which an n-type impurity such as phosphorus is doped at a high concentration, or silicide, for example.
  • the ohmic contacts 161 , 163 , 165 and 169 may be omitted.
  • the semiconductor 151 is an oxide semiconductor, for example, the ohmic contacts 161 , 163 , 165 and 169 may be omitted.
  • a data conductor including a plurality of data lines 171 and a plurality of drain electrodes 175 is disposed on the ohmic contacts 161 , 163 , 165 and 169 .
  • the data line 171 transfers a data signal and extends substantially in a vertical direction to cross the gate line 121 .
  • Each data line 171 includes a plurality of source electrodes 173 extending toward the gate electrode 124 , and the data pad portion 179 having the wide area for the connection with another layer or an external driving circuit.
  • the data driving circuit (not illustrated) that generates a data signal may be disposed, e.g., mounted, on a flexible printed circuit film (not illustrated) that is attached on the insulating substrate 110 or directly mounted on the insulating substrate 110 .
  • the data line 171 may be periodically bent, and have an oblique angle with respect to an extension direction of the gate line 121 .
  • the oblique angle between the data line 171 and the extension direction of the gate line 121 may be equal to or greater than about 45°.
  • a data line 171 may linearly extend along a straight line.
  • the drain electrode 175 includes a rod-shaped end facing the source electrode 173 based on the gate electrode 124 and an end having a wide area.
  • the data conductors 171 and 175 may have a single layer structure, or a multilayer structure including two or more conductive layers.
  • the gate electrode 124 , the source electrode 173 and the drain electrode 175 may collectively define a thin film transistor (“TFT”), which is a switching element, together with the protrusion 154 of the semiconductor.
  • TFT thin film transistor
  • the semiconductor 151 may have a substantially same plane shape as the data line 171 , the drain electrode 175 , a portion of the ohmic contacts 161 , 165 and 169 under the data line 171 and the drain electrode 175 except for the protrusion 154 of the semiconductor 151 in which the thin film transistor is disposed.
  • a first passivation layer 180 x is disposed on the data line 171 , the drain electrode 175 , and the exposed portion of the semiconductor 151 .
  • the first passivation layer 180 x may include or be formed of an inorganic insulating material, such as silicon nitride (SiNx) or silicon oxide (SiOx), for example.
  • An organic insulating layer 80 is disposed on the first passivation layer 180 x .
  • a surface of the organic insulating layer 80 may be substantially flat.
  • the organic insulating layer 80 may include or be formed of a photosensitive material and a non-photosensitive material, for example.
  • a first contact hole 185 a through which the drain electrode is exposed, is defined through the organic insulating layer 80
  • a fourth contact hole 181 and a fifth contact hole 182 are defined through the organic insulating layer 80 in the gate pad portion 129 and the data pad portion 179 .
  • a contact hole may be formed through the organic insulating layer 80 by removing a portion of the organic insulating layer 80 from regions corresponding to the gate pad portion 129 and the data pad portion 179 .
  • the organic insulating layer 80 may be applied on the gate pad portion 129 and the data pad portion 179 , and then be etched to form the fourth contact hole 181 , the fifth contact hole 182 , and the like.
  • the first contact hole 185 a of the organic insulating layer 80 is formed to expose a partial region of the drain electrode 175 for a physical and electrical connection between the drain electrode 175 and a pixel electrode 191 to be described below, and as an example of the invention, one end of the drain electrode 175 is exposed.
  • a color filter may disposed under an organic insulating layer 80 .
  • the thin film transistor array panel may further include a layer disposed on the organic insulating layer 80 .
  • the thin film transistor array panel may further include a capping layer disposed on the color filter to prevent a pigment of the color filter from flowing into a liquid crystal layer, and the capping layer may include or be formed of an insulating material, such as silicon nitride (SiNx), for example.
  • a common electrode 131 is disposed on the organic insulating layer 80 .
  • the common electrode 131 may be made of a transparent conductive material, such as indium tin oxide (“ITO”) or indium zinc oxide (“IZO”).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • the common electrode 131 may have a plane shape or a plate shape, but the common electrode 131 is not limited thereto.
  • the common electrode 131 may have a branch shape.
  • the pixel electrode 191 may have a plane shape.
  • a second contact hole 138 is defined through the common electrode 131 at an edge of the common electrode 131 , that is, a region corresponding to the drain electrode 175 , and the second contact hole 138 may correspond to the contact hole of the etched organic insulating layer 80 or overlap the contact hole of the etched organic insulating layer 80 .
  • the second contact hole 138 may be equal to or larger than the first contact hole 185 a when viewed from a top plan view. Referring to FIG. 1 , the second contact hole 138 may be spaced apart from the first contact hole 185 a with up, down, left and right intervals of predetermined values or larger with respect to a boundary of each hole.
  • the common electrode 131 is connected to a common voltage line disposed in a peripheral region around a display area through another or a separate contact hole (not illustrated) to receive a common voltage.
  • a second passivation layer 180 y is disposed on partial regions of the common electrode 131 and the first passivation layer 180 x .
  • the second passivation layer 180 y may include or be formed of an inorganic insulating material, such as silicon nitride (SiNx) or silicon oxide (SiOx), for example.
  • a third contact hole 185 b is defined through the second passivation layer 180 y .
  • the third contact hole 185 b exposes a partial region of the drain electrode 175 .
  • the third contact hole 185 b exposes one end of the drain electrode 175 , and a portion of the third contact hole 185 b overlaps the drain electrode 175 .
  • the first contact hole 185 a and the second contact hole 138 are spaced apart from each other by a predetermined distance in up, down, left and right directions with respect to the boundary of each hole according to a plane.
  • the third contact hole 185 b is slightly asymmetrically disposed, for example, the third contact hole 185 b is disposed to be adjacently biased with respect to one surface of the first contact hole 185 a in a down direction as illustrated in FIG. 1 .
  • the third contact hole 185 b may overlap a boundary of the first contact hole 185 a in the down direction.
  • a surface of a contact hole defined in a layer refers to an inner surface of the layer that defines a boundary between the layer and the contact hole.
  • the first contact hole 185 a is smaller than the second contact hole 138
  • the third contact hole 185 b is smaller than the second contact hole 138 .
  • the third contact hole 185 b is disposed to expose one end of the drain electrode 175 .
  • the third contact hole 185 b is disposed to be biased in one direction to expose one end of the drain electrode 175 , and in this case, one surface of the third contact hole 185 b may be disposed outside the first contact hole 185 a and overlap the organic insulating layer 80 .
  • the third contact hole 185 b overlap the organic insulating layer 80 , for example, three surfaces of the third contact hole 185 b may overlap the organic insulating layer 80 .
  • the remaining one surface of the third contact hole 185 b is spaced apart from the organic insulating layer 80 , and the pixel electrode 191 may be disposed through a spaced space of a corresponding surface and be electrically connected with the drain electrode 175 .
  • the pixel electrode 191 is in contact with the drain electrode 175 through one surface of the third contact hole 185 b.
  • the drain electrode 175 may extend substantially in one direction, that is, the up direction in the specification, as illustrated in FIG. 1 .
  • the extended portion of the drain electrode 175 may overlap the organic insulating layer 80 and the common electrode 131 , and the third contact hole 185 b may be disposed in a direction opposite to the one direction, that is, the extending direction of the drain electrode 175 , to overlap the drain electrode 175 .
  • an interval is defined between one surface of the third contact hole 185 b , which does not overlap the organic insulating layer 80 , and the first contact hole 185 a facing the one surface of the third contact hole 185 b .
  • A a distance of the interval between the one surface of the third contact hole 185 b and the first contact hole 185 facing the one surface of the third contact hole 185 b
  • B a distance between a remaining surface of the third contact hole 185 b and the first contact hole 185 a facing the remaining surface of the third contact hole 185 b
  • a and B may satisfy the following inequation: A>1.2 ⁇ B.
  • A denotes the spaced interval between the first contact hole 185 a and the third contact hole 185 b in the extension direction of the drain electrode 175 , and the pixel electrode 191 is connected to the drain electrode through the corresponding region.
  • B denotes the interval between a surface of the third contact hole 185 b , in which the pixel electrode 191 is not disposed or which overlaps the organic insulating layer 80 , and the first contact hole 185 a facing the surface of the third contact hole 185 b.
  • the distance of an interval between surfaces may be defined as a minimum length between the surfaces when viewed from a top view.
  • A may be in a range of about 1 micrometer ( ⁇ m) to about 6 ⁇ m, but not being limited thereto.
  • an interval, in which the pixel electrode 191 connected to the drain electrode 175 through the third contact hole 185 b overlaps the drain electrode 175 may be in a range of about 1 ⁇ m to about 6 ⁇ m.
  • resistance may be increased, but the invention is not limited to the interval having the numerical value range.
  • the interval between one surface of the third contact hole 185 b connected to the pixel electrode 191 and the first contact hole 185 a facing the one surface of the third contact hole 185 b may be greater than an interval between one of the remaining three surfaces of the third contact hole 185 b and the first contact hole 185 facing the one of the remaining three surfaces of the third contact hole 185 b by about 1.2 times.
  • the third contact hole 185 b is disposed to be close to any one side of the first contact hole 185 a through the asymmetric position relationship.
  • the pixel electrode 191 is disposed on the second passivation layer 180 y .
  • the pixel electrode 191 may include or be made of a transparent conductive material, such as ITO or IZO.
  • the pixel electrode 191 includes a plurality of branch electrodes 193 that extends substantially parallel to each other and spaced from each other, and lower and upper horizontal portions 192 that connect upper and lower ends of the branch electrodes 193 .
  • the branch electrode 193 of the pixel electrode 191 may be bent along the data line 171 .
  • a data line 171 and a branch electrode 193 of the pixel electrode 191 may extend along a straight line.
  • the pixel electrode 191 is shaped like a branch, and the common electrode 131 is shaped like a plane, but the invention is not limited thereto.
  • the pixel electrode 191 is shaped like a plane, and the common electrode 131 is shaped like a branch.
  • a fourth contact hole 181 through which a portion of the gate pad portion 129 is exposed, is defined in the first passivation layer 180 x , the second passivation layer 180 y , and the gate insulating layer 140 .
  • the number of fourth contact holes 181 may be at least one, and a plane shape of the fourth contact hole 181 may be a polygon, such as a quadrangle, a circle or an ellipse, for example.
  • a first connection member 81 is disposed in the fourth contact hole 181 .
  • the first connecting member 81 may be disposed in the same layer as the pixel electrode 191 .
  • a fifth contact hole 182 through which a portion of the data pad portion 179 is exposed, is defined in the first passivation layer 180 x and the second passivation layer 180 y .
  • the number of fifth contact holes 182 may be at least one, and a plane shape of the fifth contact hole 182 may be a polygon, such as a quadrangle, a circle or an ellipse, for example.
  • a second connecting member 82 is disposed in the fifth contact hole 182 .
  • the second connecting member 82 may be disposed in the same layer as the pixel electrode 191 .
  • the thin film transistor array panel includes the third contact hole defined to be biased to one side thereof, that is, the third contact hole is disposed at an opposite side to a longitudinal direction of the pixel electrode 191 , and a width of a light blocking member 220 for covering the pixel electrode 191 is thereby reduced, such that an aperture ratio and transmittance are improved, and power consumption is decreased through the improvement of the aperture ratio and transmittance.
  • a defect during a process for providing the pixel electrode, which is in contact with one surface of the third contact hole may be decreased.
  • the organic insulating layer 80 is described, but the invention is not limited thereto.
  • the organic insulating layer 80 may be omitted.
  • FIGS. 1 to 6 an exemplary embodiment of a manufacturing method of the thin film transistor array panel, according to the invention, will be described with reference to FIGS. 1 to 6 .
  • the gate line 121 including the gate electrode 124 and the gate pad portion 129 is provided, e.g., formed, on the insulating substrate 110 .
  • a common voltage line to be disposed in a peripheral region may be provided together with the gate line 121 .
  • the gate insulating layer 140 , the semiconductor 151 and a layer for forming the ohmic contact are sequentially provided, e.g., stacked, on the gate line 121 and the common voltage line.
  • the data conductor including the data line 171 including the source electrode 173 and the data pad portion 179 , and the drain electrode 175 is provided thereon.
  • the gate insulating layer 140 may be formed of an inorganic insulating material, such as silicon nitride (SiNx) or silicon oxide (SiOx), for example.
  • the first passivation layer 180 x is provided, e.g., stacked, on the data conductor 171 and 175 .
  • the first passivation layer 180 x may be formed of an inorganic insulating material, such as silicon nitride (SiNx) or silicon oxide (SiOx), for example.
  • the organic insulating layer 80 is provided on the first passivation layer 180 x , and the first contact hole 185 a is formed through the organic insulating layer 80 .
  • the organic insulating layer 80 includes a photosensitive material and a non-photosensitive material, and a surface of the organic insulating layer 80 may be substantially flat.
  • the organic insulating layer 80 is also provided in the regions corresponding to the gate pad portion 129 and the data pad portion 179 .
  • a color filter may be provided under an organic insulating layer, and in such an embodiment, a capping layer may be further provided on the organic insulating layer.
  • a conductive layer is provided, e.g., stacked, on the organic insulating layer 80 to form the common electrode 131 including the second contact hole 138 .
  • the common electrode 131 may be shaped like a plane.
  • the second passivation layer 180 y is formed on the common electrode 131 , and the third contact hole 185 b is formed through the second passivation layer 180 y.
  • the first contact hole 185 a is formed to be smaller than the second contact hole 138
  • the third contact hole 185 b is formed to be smaller than the second contact hole 138
  • the third contact hole 185 b is formed to expose one end of the drain electrode 175 , and thus the third contact hole 185 b is formed to be adjacent to one surface of the first contact hole 185 a , that is, biased to one side.
  • the third contact hole 185 b is formed to be biased in one direction to expose one end of the drain electrode 175 , and one surface of the third contact hole 185 b is disposed outside the first contact hole 185 a .
  • the one surface of the third contact hole 185 b disposed outside the first contact hole 185 a may overlap the organic insulating layer 80 .
  • one surface of the third contact hole 185 b overlap the organic insulating layer 80 .
  • three or less surfaces of the third contact hole 185 b may overlap the organic insulating layer 80 .
  • at least one remaining surface may be spaced apart from the organic insulating layer 80 , and the pixel electrode 191 may be connected to the drain electrode 175 through the corresponding surface.
  • the drain electrode 175 may extend in one direction, e.g., an upper direction as illustrated in FIG. 1 .
  • the extended portion of the drain electrode 175 overlaps the parts of the organic insulating layer 80 and the common electrode 131 , and the third contact hole 185 b is formed to overlap the drain electrode 175 in the other direction, e.g., a lower direction, which is opposite to the extending direction of the drain electrode 175 .
  • an interval is defined between one surface of the third contact hole 185 b , which does not overlap the organic insulating layer 80 , and the first contact hole 185 a facing the one surface.
  • A a distance of the interval between the one surface of the third contact hole 185 b and the first contact hole 185 a
  • B a distance between a remaining surface of the third contact hole 185 b and a surface of the first contact hole 185 a facing the remaining surface of the third contact hole 185 b
  • a and B may satisfy the following inequation: A>1.2 ⁇ B.
  • A denotes the spaced interval between the first contact hole and the third contact hole in the extending direction of the drain electrode 175 , and the drain electrode 175 and the pixel electrode 191 are connected to each other through the corresponding region.
  • B denotes the interval between one of the remaining surfaces of the third contact hole 185 b , in which the pixel electrode 191 is not disposed or which overlaps the organic insulating layer 80 , and the surface of the first contact hole 185 a facing the one of the remaining surfaces of the third contact hole 185 b.
  • the distance A may be in a range of about 1 ⁇ m to about 6 ⁇ m, but not being limited thereto.
  • a distance of an overlapping portion of the third contact hole 185 b and the drain electrode 175 , in which the pixel electrode 191 connected to the drain electrode 175 through the third contact hole 185 b overlaps the drain electrode 175 may be in a range of about 1 ⁇ m to about 6 ⁇ m.
  • the pixel electrode 191 , the first connecting member 81 , the second connecting member 82 and the third connecting member 86 are provided on the second passivation layer 180 y.
  • the first connecting member 81 covers an exposed portion of the gate pad portion 129 through the fourth contact hole 181
  • the second connecting member 82 covers an exposed portion of the data pad portion 179 through the fifth contact hole 182 .
  • the pixel electrode 191 covers an exposed portion of the drain electrode 175 through the third contact hole 185 b to be physically and electrically connected to the drain electrode 175 .
  • the third contact hole is formed to be biased to one side in the thin film transistor array panel.
  • the third contact hole may be disposed at an opposite side to a longitudinal direction of the pixel electrode 191 , thereby decreasing a width of the light blocking member 220 for covering the pixel electrode 191 .
  • the decrease in the width of the light blocking member 220 an aperture ratio and transmittance are improved, and power consumption is decreased through the improvement of the aperture ratio and transmittance. Accordingly, in such an embodiment, a defect during a process for forming the pixel electrode, which is in contact with one surface of the third contact hole, is decreased.
  • FIGS. 7A to 10B are views illustrating alternative exemplary embodiments of a contact hole portion in a thin film transistor array panel, according to the invention.
  • FIGS. 7A to 10B have been labeled with the same reference characters as used above to describe the exemplary embodiments of the contact hole portion in a thin film transistor array panel shown in FIGS. 1 to 6 , and any repetitive detailed description thereof will hereinafter be omitted or simplified.
  • FIGS. 7A, 8A, 9A and 10A are top plan views of alternative exemplary embodiments of the contact hole portion
  • FIGS. 7B, 8B, 9B and 10B are cross-sectional view taken along line b-b′ of FIGS. 7A, 8A, 9A and 10A , respectively.
  • a source electrode 173 which is a portion of a data line 171 , may be disposed on the same line as the data line 171 .
  • a drain electrode 175 extends substantially parallel to the source electrode 173 . Accordingly, in such an embodiment, the drain electrode 175 is substantially parallel to a portion of the data line 171 .
  • the drain electrode 175 may extend in a direction substantially vertical to the data line 171 to be in contact with a pixel electrode 191 at the extended one side thereof.
  • the gate electrode 124 , the source electrode 173 and the drain electrode 175 collectively define a TFT together with the semiconductor 154 , and a channel of the thin film transistor is formed in the semiconductor 154 between the source electrode 173 and drain electrode 175 .
  • An exemplary embodiment of the thin film transistor array panel according to the invention may include the source electrode 173 disposed on the same line as the data line 171 , and the drain electrode 175 that extends substantially parallel to the data line 171 to increase a width of the thin film transistor without increasing an area occupied by the data conductor, thus increasing an aperture ratio of a liquid crystal display.
  • a first contact hole 185 a of an organic insulating layer 80 and a second contact hole 138 of the common electrode 131 may be formed to have intervals having predetermined values with respect to all of the up, down, left and right directions when viewed from a plan view as illustrated in FIG. 7A .
  • the third contact hole 185 b may not have an interval having a predetermined value or more with respect to all of the up, down, left, and right directions from the first contact hole 185 a and the second contact hole 138 , and is asymmetrically disposed to be slightly biased to one side as illustrated in FIG. 7A .
  • one surface of the third contact hole 185 b is formed to overlap or to be inside the first contact hole 185 a , such that the organic insulating layer 80 may overlap the third contact hole 185 b.
  • the pixel electrode 191 is not disposed in one surface of the third contact hole 185 b overlapping the organic insulating layer 80 , and the pixel electrode 191 is electrically connected to the drain electrode 175 through the other surface which overlaps the drain electrode 175 but does not overlap the organic insulating layer 80 .
  • the connection of the pixel electrode 191 is cut due to undercut of the insulating layer in the one surface of the third contact hole.
  • a distance of a region in which the pixel electrode 191 is electrically connected to the drain electrode 175 is denoted by B′ (referred to as a resistance margin)
  • a distance in which the pixel electrode 191 overlaps the second insulating layer 180 y is denoted by A′ (referred to as a contact margin).
  • the drain electrode 175 may extend as illustrated in FIG. 1 , and positions and sizes of other constituent elements are substantially the same as the embodiment shown in FIG. 1 .
  • a size of the third contact hole 185 b may be larger compared to the exemplary embodiment shown in FIG. 1 .
  • the size of the third contact hole 185 b is increased as illustrated in FIGS. 8A and 8B , and three surfaces of the third contact hole 185 b may overlap the organic insulating layer 80 differently from the exemplary embodiment shown in FIGS. 7A and 7B .
  • the third contact hole 185 b may be formed to overlap or to be inside the second contact hole 138 of the common electrode 131 , such that one surface of the third contact hole 185 b may overlap the common electrode 131 .
  • the light exposing device with low resolution is used as described above, three surfaces of the third contact hole 185 b overlap the organic insulating layer 80 , and the pixel electrode 191 and the drain electrode 175 are connected to each other through one surface of the third contact hole 185 b which does not overlap the organic insulating layer 80 .
  • the one surface of the third contact hole 185 b may overlap the common electrode 131 , and the remaining three surfaces of the third contact hole 185 b may not overlap the common electrode 131 .
  • a length of a region in which the pixel electrode 191 is electrically connected with the drain electrode 175 is denoted by B′ (referred to as a resistance margin), and a distance of an overlapping portion of the pixel electrode 191 and the second insulating layer 180 y is denoted by A′ (referred to as a contact margin).
  • the pixel electrode 191 may be connected to the drain electrode 175 on at least one surface thereof, to thereby effectively operate even when a defect occurs in a process using the light exposing device with low resolution.
  • a third contact hole 185 b may be disposed to be biased in a diagonal direction.
  • the third contact hole 185 b may be disposed to be diagonally biased in an oblique direction.
  • the third contact hole 185 b may overlap an organic insulating layer 80 in left and lower surfaces thereof, and a pixel electrode 191 may be disposed in right and upper surfaces of the third contact hole 185 b to be connected to a drain electrode 175 .
  • a length of a region in which the pixel electrode 191 is electrically connected to the drain electrode 175 is denoted by B′ (referred to as a resistance margin)
  • a length of an overlapping portion of the pixel electrode 191 and the second insulating layer 180 y is denoted by A′ (referred to as a contact margin).
  • the pixel electrode 191 is effectively connected to the drain electrode 175 to have a resistance margin of a predetermined value or more to thereby effectively operate.
  • a width of a drain electrode 175 may be greater than a width of the first contact hole 185 a , and a light exposing device with low resolution may be used.
  • one surface of a third contact hole 185 b overlaps a common electrode 131 , and the remaining three surfaces of the third contact hole 185 b do not overlap the common electrode 131 .
  • three surfaces of the third contact hole 185 b may overlap an organic insulating layer 80 , and the remaining one surface thereof does not overlap the organic insulating layer 80 .
  • the third contact hole 185 b may expose one end of the drain electrode 175 .
  • the drain electrode 175 exposed through the third contact hole 185 b is connected to a pixel electrode 191 through the remaining one surface of the third contact hole 185 which does not overlap the organic insulating layer 80 .
  • a length of a region in which the pixel electrode 191 is electrically connected to the drain electrode 175 is denoted by B′ (referred to as a resistance margin)
  • a length of an overlapping region of the pixel electrode 191 and the second insulating layer 180 y is denoted by A′ (referred to as a contact margin).
  • the drain electrode and the organic insulating layer are connected to each other through one surface of the third contact hole.
  • FIG. 11 is an image of an exemplary embodiment of the thin film transistor array panel according to the invention
  • FIG. 12 is an image of a thin film transistor array panel according to the Comparative Example.
  • a width of the light blocking member formed to be parallel to the gate line is slightly small, and thus a display area displayed through the pixel electrode is large.
  • a width of a light blocking member parallel to the gate line is substantially large, such that an aperture ratio by a pixel area is smaller than an exemplary embodiment as shown in FIG. 11 .
  • the width of the light blocking member is decreased by about 7.6 micrometers ( ⁇ m) compared to the thin film transistor array panel according to Comparative Example. This corresponds to the amount of the decrease by about 26%, and the width of the light blocking member is thereby substantially decreased in an exemplary embodiment.
  • the aperture ratio is increased by about 13% from 45.5% to 58.25%, and the transmittance is increased from 3.4% to 4.2%, compared to the thin film transistor array panel according to Comparative Example.
  • the aperture ratio and the transmittance are improved, and thus power consumption is also decreased.
  • FIG. 13 is a current confirming graph for an exemplary embodiment of the thin film transistor array panel according to the invention and the thin film transistor array panel according to the Comparative Example
  • FIG. 14 is a current to voltage graph for an exemplary embodiment of the thin film transistor array panel according to the invention and the thin film transistor array panel according to the Comparative Example
  • FIG. 15 is a current to time graph for an exemplary embodiment of the thin film transistor array panel according to the invention and the thin film transistor array panel according to the Comparative Example.
  • FIG. 13 is a graph illustrating a flow of a current according to the number of surfaces in which the pixel electrode is in contact with the third contact hole.
  • the flow of the current is separately illustrated according to a contact area, as well as the number of contact surfaces.
  • Cases of 1, 1′, 1 ′′ are cases in which the number of surfaces in which the pixel electrode is in contact with the third contact hole is one, and the pixel electrode is in contact with one surface of the third contact hole with contact areas of about 5 ⁇ m ⁇ m 5, about 6 ⁇ m ⁇ m 6 and about 7 ⁇ m ⁇ 7 ⁇ m, respectively.
  • Cases of 2, 2′, 2′′ are cases in which the number of surfaces in which the pixel electrode is in contact with the third contact hole is two, and the pixel electrode is in contact with three surfaces of the third contact hole with contact areas of about 5 ⁇ m ⁇ 5 ⁇ m, about 6 ⁇ m ⁇ 6 ⁇ m, and about 7 ⁇ m ⁇ 7 ⁇ m, respectively.
  • Cases of 3, 3′, 3′′ are cases in which the number of surfaces in which the pixel electrode is in contact with the third contact hole is three, and the pixel electrode is in contact with four surfaces of the third contact hole with contact areas are about 5 ⁇ m ⁇ 5 ⁇ m, about 6 ⁇ m ⁇ 6 ⁇ m, and about 7 ⁇ m ⁇ 7 ⁇ m, respectively.
  • a lower graph between two graphs represents Ioff when a voltage applied to a gate is about ⁇ 6 volts (V), and an upper graph represents Ion when a voltage applied to the gate is about 20 V.
  • V ⁇ 6 volts
  • Ion when a voltage applied to the gate is about 20 V.
  • FIG. 14 illustrates whether a defect occurs in the contact hole according to an increase in a voltage through an application of a voltage.
  • a lowermost graph among a plurality of graphs (case 5 ) represents an exemplary embodiment of the thin film transistor array panel according to the invention.
  • cases 1 and 2 having the largest inclination are cases of the thin film transistor array panel according to the Comparative Example in which the pixel electrode is in contact with the contact hole in four surfaces
  • cases 3 and 5 are cases of the thin film transistor array panel according to the Comparative Example in which the pixel electrode is in contact with one contact hole or a plurality of contact holes in one surface
  • case 4 is a case of the thin film transistor array panel according to the Comparative Example in which the pixel electrode is in contact with the contact hole in two surfaces.
  • a current is not increased at a voltage higher than a predetermined value as a voltage increases, but in an exemplary embodiment, as shown in case 5 of FIG. 14 , even when a voltage is increased according to the application of the voltage, a current is uniformly increased without a particular defect or disconnection. That is, according to an exemplary embodiment of the invention, even in a case where the pixel electrode is in contact with the contact hole only in one surface, there is no abnormality in performance of the display device.
  • FIG. 15 represents a current according to elapse of a time (t) when a voltage is applied under a predetermined condition
  • case 1 is a case where one pixel electrode is in contact with the contact hole in one surface and a voltage of about 10 V is applied
  • case 2 is a case where one pixel electrode is in contact with the contact hole in four surfaces and a voltage of about 5 V is applied
  • case 3 is a case where a plurality of pixel electrodes is in contact with the contact hole in four surfaces and a voltage of about 50 V is applied
  • case 4 is a case where a plurality of pixel electrodes is in contact with the contact hole in one surface and a voltage of about 50 V is applied.
  • case 1 and case 4 in which the pixel electrode is in contact with the contact hole in one surface, exhibit a uniform current in a certain degree.
  • case 4 that exhibits a slightly lower current compared to those of case 2 and case 3 corresponding to the thin film transistor array panel according to the Comparative Example, in which the pixel electrode is in contact with the contact hole in four surfaces, but exhibits a substantially uniform current as time elapses.
  • the pixel electrode is substantially in contact with the contact hole in one surface according to an asymmetrically biased position of the contact hole, and thus the pixel electrode may be effectively connected to the drain electrode despite a process error or defect.

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CN114709226A (zh) 2022-07-05
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