US9302466B2 - Ink composition usable in solar battery manufacturing process, and method of forming pattern using the same - Google Patents

Ink composition usable in solar battery manufacturing process, and method of forming pattern using the same Download PDF

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Publication number
US9302466B2
US9302466B2 US14/126,189 US201314126189A US9302466B2 US 9302466 B2 US9302466 B2 US 9302466B2 US 201314126189 A US201314126189 A US 201314126189A US 9302466 B2 US9302466 B2 US 9302466B2
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Prior art keywords
ink composition
weight
parts
fluorinated surfactant
ink
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US14/126,189
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US20140199527A1 (en
Inventor
Min-A Yu
Yong-Sung Goo
Joon-Hyung Kim
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LG Chem Ltd
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LG Chem Ltd
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Priority claimed from PCT/KR2013/003882 external-priority patent/WO2013165223A1/ko
Assigned to LG CHEM, LTD. reassignment LG CHEM, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: GOO, Yong-Sung, KIM, JOON-HYUNG, YU, MIN-A
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M1/00—Inking and printing with a printer's forme
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/10—Printing inks based on artificial resins
    • C09D11/101—Inks specially adapted for printing processes involving curing by wave energy or particle radiation, e.g. with UV-curing following the printing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/30—Inkjet printing inks
    • C09D11/38—Inkjet printing inks characterised by non-macromolecular additives other than solvents, pigments or dyes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/521—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Definitions

  • the present invention relates to an ink composition adjustable in terms of fluidity for forming a pattern on an uneven silicon substrate in a solar battery manufacturing process, and a method of forming a pattern using the ink composition.
  • Solar batteries converting solar energy into electric energy are core devices in solar energy generation.
  • solar batteries are used in various fields to supply electricity to electrical or electronic products, houses, buildings, etc.
  • Processes for manufacturing solar batteries include an electroplating process and an etching process. Such processes require materials for selectively masking certain regions of a silicon substrate and forming an insulation film on solar cells. In the related art, such materials are usually applied to substrates by screen printing methods. In this case, however, it is difficult to obtain fine line widths necessary for solar batteries.
  • electrode patterns, etching-film patterns, or insulation-film patterns having fine line widths can be formed by a non-contact method if an inkjet printing method is used.
  • conventional ink compositions for inkjet printing may be highly viscous, and thus it may be difficult to form a pattern on an uneven silicon substrate using such a conventional ink composition in a solar battery manufacturing process because the ink composition may flow across the uneven silicon substrate. Therefore, it is necessary to develop an ink composition that can be used to form a pattern on an uneven silicon substrate in an inkjet printing process.
  • aspects of the present invention provide an ink composition adjustable in terms of fluidity for forming a pattern on an uneven silicon substrate in a solar battery manufacturing process, and a method of forming a pattern using the ink composition.
  • an ink composition usable in a solar battery manufacturing process including: a) a polymerizable compound having an ethylenically unsaturated bond; b) a fluorinated surfactant; and c) a solvent, wherein the ink composition has a solid content of 45 parts by weight to 99.99 parts by weight based on the total weight of the ink composition.
  • a method of forming a pattern including: applying the ink composition using an inkjet print head of an inkjet printer; and thermally treating the applied ink composition.
  • an etching mask formed of the ink composition on an uneven silicon substrate for manufacturing a solar battery.
  • an insulation film formed of the ink composition on an uneven silicon substrate for manufacturing a solar battery there is provided an insulation film formed of the ink composition on an uneven silicon substrate for manufacturing a solar battery.
  • the ink composition usable in a solar battery manufacturing process can be adjusted in fluidity by varying the solid content of the ink composition, and thus a pattern can be formed of the ink composition even on an uneven silicon substrate.
  • the ink composition can be used to form an insulation film or an etching mask by adjusting the concentration of an adhesion promoter included in the ink composition and the temperature of a thermal treatment in a pattern forming process.
  • FIG. 1 is an image of a pattern formed by ejecting an ink composition prepared in Example 1 onto an uneven silicon substrate;
  • FIG. 2 is an image of a pattern formed by ejecting an ink composition prepared in Example 2 onto an uneven silicon substrate;
  • FIG. 3 is an image of a pattern formed by ejecting an ink composition prepared in Example 3 onto an uneven silicon substrate;
  • FIG. 4 is an image of a pattern formed by ejecting an ink composition prepared in Comparative Example 1 onto an uneven silicon substrate;
  • FIG. 5 is an image of a pattern formed by ejecting an ink composition prepared in Comparative Example 2 onto an uneven silicon substrate;
  • FIG. 6 is an image of a pattern formed by ejecting an ink composition prepared in Comparative Example 3 onto an uneven silicon substrate;
  • FIG. 7 is an image of a pattern formed by ejecting an ink composition prepared in Comparative Example 4 onto an uneven silicon substrate.
  • An embodiment of the invention provides an ink composition usable in a solar battery manufacturing process.
  • the ink composition includes a) a polymerizable compound having an ethylenically unsaturated bond, b) a fluorinated surfactant, and c) a solvent.
  • the ink composition has a solid content of 45 parts by weight to 99.99 parts by weight based on the total weight of the ink composition.
  • the polymerizable compound having an ethylenically unsaturated bond has radicals for polymerization.
  • the polymerizable compound having an ethylenically unsaturated bond is included in the ink composition to increase the durability of a pattern formed of the ink composition.
  • the polymerizable compound having an ethylenically unsaturated bond has viscosity so that the fluidity of the ink composition on an uneven silicon substrate may be adjusted by the polymerizable compound having an ethylenically unsaturated bond.
  • the polymerizable compound having an ethylenically unsaturated bond of the ink composition may be an acrylic monomer.
  • the polymerizable compound having an ethylenically unsaturated bond may be a crosslinkable multifunctional acrylate.
  • the polymerizable compound having an ethylenically unsaturated bond may include at least two selected from the group consisting of neopentyl glycol diacrylate, ditrimethylolpropane tetraacrylate, dipentaerythritol tetraacrylate, dipentaerythritol pentaacrylate, dipentaerythritol hexaacrylate, dipropylene glycol diacrylate, butanediol diacrylate, ethylene glycol diacrylate, triethylene glycol diacrylate, trimethylol triacrylate, trimethylolpropane triacrylate, tripropylene glycol diacrylate, pentaerythritol triacrylate, propylene glycol diacrylate, and hexanediol diacrylate.
  • the polymerizable compound having an ethylenically unsaturated bond is not limited thereto.
  • the polymerizable compound having an ethylenically unsaturated bond of the ink composition may be dipentaerythritol hexaacrylate, trimethylolpropane triacrylate, and/or dipropylene glycol diacrylate.
  • the dipentaerythritol hexaacrylate and the trimethylolpropane triacrylate are multifunctional acrylates that can be cross-linked with each other for increasing the chemical resistance of the ink composition.
  • the dipropylene glycol diacrylate has a low degree of viscosity, and thus the ink composition including the dipropylene glycol diacrylate may be easily ejected through an inkjet print head.
  • the ink composition may include 40 parts by weight to 98 parts by weight, 60 parts by weight to 96 parts by weight, or 70 parts by weight to 94 parts by weight of a) the polymerizable compound having an ethylenically unsaturated bond, based on the total weight of the ink composition.
  • a high-quality line pattern may be formed on an uneven silicon substrate using the ink composition, and an additive or surfactant may be added to the ink composition to increase the adhesiveness of the ink composition or control the spreading properties of the ink composition.
  • the fluorinated surfactant is included in the ink composition to control the spreading properties of the ink composition.
  • the fluorinated surfactant may have a high degree of antifoaming properties to prevent the formation of bubbles or remove bubbles when the ink composition is supplied to an inkjet printing apparatus and thus to prevent ink ejection errors caused by bubbles.
  • the fluorinated surfactant may include polyethylene glycol and a perfluorocarbon.
  • the spreading properties of the ink composition may be easily controlled, and the ink composition may not easily flow. Therefore, a pattern may be easily formed on an uneven silicon substrate using the ink composition.
  • the surface tension of the toluene solution may be within 20 mN/m to 30 mN/m, or 23 mN/m to 27 mN/m.
  • a propylene glycol methyl ether solution including 0.1 wt % of the fluorinated surfactant it may be preferable that the surface tension of the propylene glycol methyl ether solution be within 20 mN/m to 30 mN/m, or 24 mN/m to 28 mN/m.
  • both the toluene solution including 0.1 wt % of the fluorinated surfactant and the propylene glycol methyl ether solution including 0.1 wt % of the fluorinated surfactant may have surface tensions within the above-mentioned ranges.
  • the ink composition may properly cover an uneven silicon substrate and may not spread excessively on the uneven silicon substrate. Therefore, a pattern may be stably formed and maintained on the uneven silicon substrate.
  • the term “surface tension” denotes tension between air and the solution. In addition, surface tension values were measured at room temperature using a Du Nouy Ring tension meter.
  • the ink composition may include 0.01 parts by weight to 1.0 part by weight of the fluorinated surfactant, 0.01 parts by weight to 0.5 parts by weight of the fluorinated surfactant, or 0.03 parts by weight to 0.1 parts by weight of the fluorinated surfactant, based on the total weight of the ink composition.
  • patterns may be formed with a high degree of reproducibility using the ink composition, and the storability of the ink composition may be improved.
  • the solvent may be an organic solvent for controlling the viscosity of the ink composition and the thickness of a film formed of the ink composition.
  • the solvent may include at least one selected from the group consisting of diethylene glycol butyl methyl ether, diethylene glycol monobutyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diethylene glycol monoethyl ether acetate, dipropylene glycol methyl ether acetate, butyl lactate, ethoxyethyl acetate, ethylene glycol monobutyl ether, ethylene glycol monobutyl ether acetate, ethyl ethoxy propionate, propylene glycol methyl ether acetate, propylene glycol monoethyl ether, and propylene glycol butyl ether.
  • the solvent is not limited thereto.
  • the ink composition may include 0.001 parts by weight to 55 parts by weight of c) the solvent based on the total weight of the ink composition. In this case, spreading of the ink composition may be reduced, and thus a line pattern may be uniformly formed using the ink composition.
  • the ink composition may have a solid content (excluding c) the solvent) within the range of 45 parts by weight to 99.99 parts by weight, 63 parts by weight to 99.99 parts by weight, or 70 parts by weight to 99.99 parts by weight, based on the total weight of the ink composition. As the solid content increases, the ink composition may spread less, and thus a uniform pattern may be stably formed of the ink composition.
  • the solvent may be a mixture of one or more substances each having a boiling point of 140° C. to 250° C.
  • the ink composition may not dry on the surfaces of nozzles of an inkjet printer, and thus the ink composition may be smoothly ejected through the nozzles. After a pattern is formed of the ink composition, the solvent may be completely evaporated. That is, the productivity of a pattern forming process may be improved.
  • the ink composition of the current embodiment may further include an adhesion promoter to increase adhesion to a silicon substrate. If the ink composition of the current embodiment is used to form an etching mask on a substrate in a solar batter manufacturing process, owing to the increased adhesion of the ink composition, separation of a pattern may be prevented when the substrate is treated with an acid solution to selectively etch an emitter layer.
  • the adhesion promoter may include a substituent forming a silanol group through hydrolysis, or molecules of the adhesive promoter may include a methoxy silyl group or an ethoxy silyl group.
  • the adhesion promoter may include at least one selected from the group consisting of vinyltrimethoxysilane, vinyltriethoxysilane, glycidoxypropyltrimethoxysilane, glycidoxypropyltriethoxysilane, methacryloxypropyltrimethoxysilane, and methacryloxypropyltriethoxysilane.
  • the adhesion promoter is not limited thereto.
  • the ink composition may include 0.1 parts by weight to 5.0 parts by weight of the adhesion promoter based on the total weight of the ink composition. In this case, the storability of the ink composition can be improved. In addition, when the ink composition is used to form an etching mask, separation or breakage of a pattern may be prevented during an acid solution treatment.
  • the ink composition of the current embodiment may further include at least one additive selected from the group consisting of a polymerization initiator and a binder.
  • the polymerization initiator may include a thermal initiator, a photoinitiator, or a combination thereof, so as to harden the polymerizable compound having an ethylenically unsaturated bond. If the polymerization initiator includes a thermal initiator, the ink composition may be hardened by removing the solvent from the ink composition through a one-step heat treatment process without having to perform an additional process.
  • the ink composition include 0.1 parts by weight to 5.0 parts by weight of the polymerization initiator based on the total weight of the ink composition.
  • sufficient radicals may be guaranteed for thermal polymerization, and the polymerization initiator may be sufficiently dissolved to reduce surface defects when an insulation film is formed of the ink composition.
  • an etching mask formed of the ink composition may be easily removed using a stripper.
  • the thermal initiator may include at least one selected from the group consisting of azo compounds, organic peroxides, and hydrogen peroxide.
  • the thermal initiator is not limited thereto.
  • the photoinitiator may include a photopolymerization initiator or photosensitizer known in the related art.
  • the photoinitiator is not limited thereto.
  • the photoinitiator may include at least one selected from the group consisting of triazine compounds, non-imidazole compounds, acetophenone compounds, benzophenone compounds, and thioxanthone compounds.
  • the binder may increase the adhesion of the ink film, facilitate formation of the ink film, and adjust the strength of the ink film.
  • the type or kind of the binder is not limited, as long as the binder does not have an influence on the properties of the ink composition.
  • the binder may include a copolymer of one or more selected from the group consisting of styrene, chlorostyrene, ⁇ -methyl styrene, vinyl toluene, 2-ethylhexyl(meth)acrylate, methyl(meth)acrylate, ethyl(meth)acrylate, butyl(meth)acrylate, benzyl(meth)acrylate, glycidyl(meth)acrylate, dimethylaminoethyl(meth)acrylate, isobutyl(meth)acrylate, t-butyl(meth)acrylate, cyclohexyl(meth)acrylate, dicyclopentanyl(meth)acrylate, isobutyl(meth)acrylate, 2-phenoxyethyl(meth)acrylate, tetrahydrofurfuryl(meth)acrylate, hydroxyethyl(meth)acrylate, 2-hydroxyethyl
  • the ink composition include 0.01 parts by weight to 8 parts by weight of the binder, based on the total weight of the ink composition.
  • the viscosity of the ink composition may not be high, and thus a pattern may easily be formed of the ink composition.
  • the ink composition usable in a solar battery manufacturing process have a contact angle of 30° to 60°.
  • the term “contact angle” denotes that when an ink droplet is dropped on a base, the angle between the surface of the base and a line extending from the contact point between the base and the ink droplet and tangent to the surface of the ink droplet.
  • the contact angle of an ink droplet may be measured using a contact angle gauge (DSA100 by KRUSS).
  • the contact angle of an ink droplet dropped on a glass substrate is measured.
  • the contact angle of an ink (composition) droplet is within the above-mentioned range, the amount of spreading of the ink composition on an uneven silicon substrate may be low, and a pattern having a desired line width may easily be formed.
  • partial ink clots may be prevented, and thus a pattern may be continuously formed on a substrate with a high degree of adhesion to the substrate.
  • the pattern forming method includes: applying the ink composition described in the previous embodiment using a inkjet print head of an inkjet printer; and thermally treating the applied ink composition.
  • the ink composition may be applied to a glass substrate, a silicon substrate, or a substrate on which a metal, SiO 2 , or ITO is deposited.
  • the ink composition may be applied to an uneven silicon substrate for forming a solar battery.
  • the ink composition may be applied to a substrate by a non-contact method using the inkjet print head.
  • the inkjet print head may be heated to decrease the viscosity of the ink composition and thus to make it easy to eject the ink composition through the inkjet print head.
  • the inkjet print head be heated to 40° C. to 80° C. for decreasing the viscosity of the ink composition to 10 cP to 20 cP.
  • the ink composition since the viscosity of the ink composition is low, the ink composition may be stably ejected through the inkjet print head without causing any errors in a driving unit of the inkjet printer.
  • the storability of the ink composition may be improved.
  • the thermal treating of the applied ink composition may be performed using a vacuum dryer, a convection oven, a hot plate, or an IR oven, so as to form a film by drying the ink composition.
  • the thermal treating may be performed within the temperature range of 130° C. to 250° C. If the thermal treating temperature is outside of this range, the film formed by the ink composition may not function as an etching mask or an insulation film due to insufficient hardening, and it may be difficult to remove a pattern in the case of using the film formed by the ink composition as an etching mask. Furthermore, reactants may be partially burned off.
  • the thermal treating of the ink composition may be performed within the temperature range of 160° C. to 200° C.
  • the etching mask (mask pattern) may have a high degree of resistance to etching environments in the following emitter forming process in which an emitter layer is selectively etched using the etching mask. Therefore, separation or breakage of a pattern may be prevented, and after the emitter forming process, the etching mask may be easily removed using an alkali solution.
  • the thermal treating of the ink composition may be performed within the temperature range of 220° C. to 250° C. In this case, the ink composition may be sufficiently hardened owing to the high thermal treating temperature.
  • an etching mask may be formed on an uneven silicon substrate using the ink composition for forming a solar battery.
  • the etching mask may be formed by a method known in the related art to which the present invention pertains, or a pattern formed by the pattern forming method of the current embodiment may be used as the etching mask.
  • the resistance of the etching masks to etching environments of a selective emitter forming process may be high, and the etching masks may be easily removed using an alkali solution after use. Therefore, solar batteries may be manufactured with high degrees of reproducibility and stability.
  • an insulation film may be formed on an uneven silicon substrate using the ink composition in a solar battery manufacturing process.
  • the insulation film may be formed by a method known in the related art to which the present invention pertains, or a pattern formed by the pattern forming method of the current embodiment may be used as the insulation film.
  • V65 being a thermal initiator
  • benzyl(meth)acrylate/methacrylic acid were added at a molar ratio of 68/32 to the reaction vessel. Thereafter, the mixture was allowed to react under a nitrogen atmosphere at 65° C. for 7.5 hours.
  • a copolymer solution obtained through the reaction was inserted into a flask equipped with an agitator, and glycidyl(meth)acrylate was added to the flask. Then, the mixture was allowed to react at 110° C. for 6 hours, so as to obtain an acrylic copolymer.
  • V65 being a thermal initiator
  • benzyl(meth)acrylate/styrene/methacrylic acid/lauryl methacrylate were added at a molar ratio of 52/19/12/17 to the reaction vessel. Thereafter, the mixture was allowed to react under a nitrogen atmosphere at 65° C. for 7.5 hours, so as to obtain a binder resin.
  • 100 parts by weight of an ink composition was prepared according to the present invention by mixing, for 2 hours, 1.00 part by weight of the binder A; 93.24 parts by weight of a polymerizable compound mixture of dipentaerythritol hexaacrylate, trimethylolpropane triacrylate, and dipropylene glycol diacrylate; 2.00 parts by weight of methacryloxypropyltrimethoxysilane; 0.04 parts by weight of a fluorinated surfactant; 0.25 parts by weight of V40 by Wako as an initiator; and 3.47 parts by weight of diethylene glycol methyl butyl ether as a solvent.
  • the solid content of the ink composition was calculated as the sum of the parts by weight of all the components except the parts by weight of the solvent, based on the total parts by weight of the ink composition, and the viscosity of the ink composition was measured using a viscosity gauge at room temperature (25° C.)
  • the ink compositions prepared in Examples 1 to 3 and Comparative Examples 1 to 4 were ejected onto uneven silicon substrates to form patterns.
  • the ink compositions of Example 1 and Comparative Example 3, the ink composition of Comparative Example 1, and the ink composition of the Comparative Example 2 were ejected through inkjet print heads at 45.5° C., 37.6° C., and 42.7° C., respectively.
  • the ink compositions of Examples 2 and 3 and Comparative Example 4 were ejected through inkjet print heads at room temperature. After forming the patterns, the ink compositions (the patterns) were thermally treated at a temperature of 130° C. or higher so as to remove solvents and harden the polymerizable compound having an ethylenically unsaturated bonds.
  • FIGS. 1 to 3 are images of patterns formed by ejecting the ink compositions of Examples 1 to 3 onto uneven silicon substrates
  • FIGS. 4 to 7 are images of patterns formed by ejecting the ink compositions of Comparative Examples 1 to 4 onto uneven silicon substrates.
  • the solid content of the ink composition of the embodiment of the invention was 40 parts by weight or less, the uniformity of a pattern formed of the ink composition was decreased. In other words, as the solid content of the ink composition was decreased, the amount of spreading of the ink composition was increased. If the solid content of the ink composition was 40 parts by weight or less, it was difficult to form a line pattern using the ink composition. In addition, after a pattern was formed of the ink composition on an uneven silicon substrate and the solvent was evaporated from the ink composition, tip or edge portions of the uneven silicon substrate for manufacturing a solar battery were not properly covered with the pattern. Furthermore, in the case of not using a fluorinated surfactant, it was difficult to form a line pattern on an uneven substrate using the ink composition although the solid content of the ink composition was high.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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  • Inks, Pencil-Leads, Or Crayons (AREA)
US14/126,189 2012-05-03 2013-05-03 Ink composition usable in solar battery manufacturing process, and method of forming pattern using the same Active US9302466B2 (en)

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KR20120046866 2012-05-03
KR10-2012-0046866 2012-05-03
KR1020130050314A KR101431485B1 (ko) 2012-05-03 2013-05-03 태양전지 제조에서 이용 가능한 잉크 조성물 및 이를 이용한 패턴형성방법
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JP5776129B1 (ja) * 2014-03-26 2015-09-09 東洋インキＳｃホールディングス株式会社 活性エネルギー線硬化型インクジェットインキ組成物
US20170298240A1 (en) 2016-04-13 2017-10-19 Inx International Ink Co. Solvent-uv hybrid inkjet ink for aluminum beverage can decoration
KR102161333B1 (ko) * 2016-12-28 2020-09-29 주식회사 엘지화학 양이온성 중합성 조성물의 포장 용기 및 이를 사용한 포장 방법

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KR100955977B1 (ko) 2005-06-03 2010-05-04 다이킨 고교 가부시키가이샤 패턴 형성용 표면 처리제
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US20140199527A1 (en) 2014-07-17

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