US9051174B2 - Method for encapsulating an MEMS component - Google Patents
Method for encapsulating an MEMS component Download PDFInfo
- Publication number
- US9051174B2 US9051174B2 US13/003,148 US200913003148A US9051174B2 US 9051174 B2 US9051174 B2 US 9051174B2 US 200913003148 A US200913003148 A US 200913003148A US 9051174 B2 US9051174 B2 US 9051174B2
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- United States
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- cover layer
- mst
- container
- component
- top side
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00309—Processes for packaging MEMS devices suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Definitions
- electromechanical component is intended also to encompass components having combined elements from microelectronics, micromechanics, microfluidics and micro-optics.
- Such components are generally also referred to as MEMS (microelectromechanical system) or MOEMS (micro-optoelectromechanical system), or simply as MST (microsystems technology) components.
- MEMS microelectromechanical system
- MOEMS micro-optoelectromechanical system
- MST microsystems technology
- An MST device is understood to be a serviceable device having an MST component as a functional unit.
- One object to be achieved consists in specifying an efficient method for the production of such an MST component, and a resultant device having an MST component.
- a carrier substrate for example a container for housing at least one electrical component, preferably an MST component
- the container is initially opened toward one side and accommodates the MST component in such a way that the latter is arranged at least approximately flush with the container opening, wherein that end side of the MST component which faces the container opening is at least approximately flush with the container opening.
- Said end side of the MST component is also referred to hereinafter as the top side.
- the container can contain further interconnected components, in particular passive components, amplifiers and/or ASICs.
- the container with the MST component arranged therein is closed with a covering comprising at least one layer or a cover layer.
- the covering is referred to hereinafter as cover layer, wherein the cover layer itself can be divided, or have been divided, into a plurality of sublayers.
- the cover layer connects the container edge to the top side of the MST component.
- the MST component is preferably arranged approximately flush to flush with the container edge.
- the cover layer preferably has an elasticity that makes it possible to connect the MST component to the container edge in a stable manner. In this case, it is advantageously possible to dispense with arranging the component flush in a manner abutting the container edge.
- the cover layer is provided with at least one cutout, which divides the cover layer into an inner region and an outer region, such that both the inner region and the outer region are connected to the MST component.
- the cutout completely encloses the inner region. It can extend over the entire layer thickness of the cover layer, or be formed only as far as a depth corresponding to a fraction of said layer thickness.
- the inner region of the cover layer is lifted off or pulled off, while the outer region remains adhered.
- the inner region of the cover layer can be pulled off for example by means of a lift-off film that has been laminated on, wherein the adhesive strength of the lift-off film on the outer region of the cover layer can be reduced, which can be achieved by means of UV irradiation, for example, in the case of specific films that can be used as lift-off film.
- the lift-off film can be selectively irradiated on the outer region of the cover layer in order that only this irradiated region acquires a reduced adhesive strength in a targeted manner.
- the underside of the lift-off film can be provided with adhesives having different adhesion strengths, wherein an adhesive having a lower adhesion strength is used in the outer region of the lift-off film, said outer region covering the outer region of the cover layer, than in the inner region of the lift-off film.
- the adhesive can also be applied selectively in such a way that little or no adhesive at all is present in the outer region.
- the cover layer is adhesively bonded to the MST component and the container, wherein a self-adhesive cover layer, for example, is used.
- the cover layer can be embodied as inherently tacky or it can be provided with an adhesive film which imparts an adhesiveness or adhesive surface to said cover layer.
- the cover layer preferably has a carrier layer, to which other layers can be applied.
- a polymer layer for example, is suitable as carrier layer.
- the cover layer preferably has a thickness of 20 to 100 ⁇ m.
- An optionally present adhesive film of the cover layer can have a thickness of 10 to 25 ⁇ m, for example.
- an adhesive is applied to the cover layer.
- the adhesive is applied to the container edge and to the MST component in a structured fashion, that is to say with a geometrical pattern.
- the adhesive effect is set by pressure and/or heat during application or during lamination.
- hot melt adhesives or so-called “B-stage” materials the adhesion effect of which can be manifested by pressure and/or heat.
- a continuous cutout is produced in the cover layer, wherein the cutout is narrower than the structures forming the top side of the MST component, or than the upwardly facing edges of the container.
- the cutout can in each case be embodied as a narrow trench and enclose an inner region of the cover layer.
- the cutout can be embodied as a perforation or have a perforated region, wherein the distance between the perforation holes is preferably less than the thickness of the cover layer. Consequently, the inner region can be exactly separated in a later method step, such that no undesirable tears arise particularly in the outer region.
- a perforation is suitable for applications in which no further metallization is applied to the cover layer. Otherwise, said metallization would likewise have to be separated in an additional method step, thereby electrically isolating inner and outer regions.
- the cutout is produced by means of laser ablation, such that, given a suitable choice of the laser wavelength, focus diameter, power, pulse frequency and scanning parameters, an attack on the container and, in particular, the top side of the MST component is preferably avoided.
- the cutout can be produced by means of photolithographic processing of the cover layer, wherein a cover layer is used which comprises photolithographically processable and, in particular, light-sensitive material, preferably a positive or negative photoresist.
- a cover layer is used which comprises photolithographically processable and, in particular, light-sensitive material, preferably a positive or negative photoresist.
- the cover layer is structured by means of scanning exposure or mask exposure and subsequent development, wherein, through the use of solvents, the cutout is washed out or the cover layer is dissolved in the exposed or unexposed region.
- the cover layer and that top side of the MST component and/or of the container edge that has been partly uncovered through the cutout are treated in such a way that they acquire electrically conductive properties.
- This is achieved for example by the application of a metallic layer by means of sputtering or by electrostatic sputtering of graphite.
- the cutout or that region of the top side of the MST component and of the container that has been uncovered through the cutout can be provided with an electrically conductive layer.
- the electrical property of the cover layer can be present in the form of a seed layer, where the term seed layer is understood to be an electrically conductive layer that enables further electroplating.
- a further cutout is produced in the electrically conductive layer, for example in the seed layer, said further cutout being led through as far as the top side of the MST component.
- a metal layer is deposited electrolytically on the seed layer.
- a preferably closed, electrically conductive layer is produced, which has the effect that electrical and MST components arranged in the container are better shielded against electromagnetic radiation.
- a further advantage is the mechanical reinforcement of the cover layer that is obtained as a result, such that the MST component is better protected against environmental effects.
- a further advantage is the additional adhesion—obtained as a result of electroplating—of the cover layer outer edges to the container and to the MST component.
- the seed layer or the electrically conductive layer can also come into contact with a metallization which is already situated on the container edge and which, in turn, can be connected to an electrical ground terminal. The seed layer can thus be put at ground potential.
- a plurality of containers lying alongside one another are provided simultaneously, referred to hereinafter as a panel.
- the cover layer is applied over a plurality of containers and the MST components arranged therein.
- the panel can be singulated in any desired manner into individual devices comprising MST components and/or into arrays composed of a plurality of associated or interacting MST components.
- the container preferably accommodates electrical conductor tracks which make contact with the MST component, wherein the cover layer advantageously protects these conductor track structures against external environmental influences. If the container is embodied in an electrically insulating fashion, then the electrical interactions between the conductor tracks can be minimized.
- the container has plated-through holes which contact-connect the electrical conductor track structures or the MST component in the container toward the outside.
- the container comprises at least one material selected from: aluminum oxide, magnesium oxide, zirconium oxide, titanium dioxide, glass ceramic, aluminum nitride, glass, plastic, in particular high-melting-point thermoplastics or epoxide-based thermosetting plastics, preferably with mineral or other fillers.
- a microphone As MST component, a microphone, a loudspeaker, a pressure sensor and/or a sensor for measuring atmospheric parameters can be used or inserted into the container.
- the method affords the advantage that the MST component is protected against physical and chemical effects during the production process.
- a device comprising an MST component which is producible directly by a method described in the context of this document is additionally specified.
- a device comprising an MST component, and in particular an electromechanical transducer, is specified, which has a container open on one side, an MST component being arranged in said container.
- a cavity is provided between the inner side of the container and the MST component.
- a covering or a covering comprising a cover layer covers the cavity and connects the MST component to the container, wherein a region of the MST component is freed of the cover layer on its top side facing the container opening.
- the cavity preferably serves for the development, propagation and resonance of acoustic waves which can be emitted by a loudspeaker as an example of an encapsulated MST component, toward the outside.
- the MST component can e.g. also be a microphone or pressure sensor.
- the acoustic waves or pressure fluctuations to be measured can pass through the region freed of the cover layer at the open side of the container from the inside toward the outside, or vice versa.
- the cavity can also serve as a chamber in which, for example, a pressure can build up, which can then be measured by the MST component.
- the cavity can serve as pressure reference.
- a microphone mention is made of the “acoustic back volume”.
- the cover layer comprises a plurality of layers, wherein one layer is preferably a metal layer.
- the metal layer can be deposited on a seed layer.
- the metal layer is preferably directly connected to the top side of the MST component and to the top side of the container frame.
- a further layer of the cover layer is preferably a carrier film, which contains a polymer, for example, on which the metal layer or even further layers can be applied.
- the container, the microphone, the cover layer and also further constituent parts of the electromechanical transducer can be embodied according to at least one example described in this document.
- FIGS. 1 to 8 show different steps in the production of a device comprising an MST component
- FIG. 9 shows an illustration of a completed device, in particular of an electromechanical transducer.
- FIG. 1 schematically shows a cross section of an MST device 1 , wherein, as MST component 3 , an MEMS chip, in this case a microphone, is arranged centrally on the inner base 2 a of a cup-shaped container 2 , which is injection-molded or laminated preferably in a multilayered fashion.
- the cup-shaped container 3 can have a circular contour or a polygonal contour; the contour of the container is not restricted to a specific form.
- the microphone 3 has solder balls 3 a or a flip-chip contact-connection 3 a enabling electrical contact to be made with the microphone also from the inner base 2 a of the container.
- the microphone 3 has a preferably hollow-cylindrical frame element 3 b , wherein a membrane 3 c is arranged at that end of the frame element 3 b which faces the inner base. This can convert its sound-pressure-governed deflection into electrical signals by means of the piezoelectric effect, for example.
- the opening 10 uncovered in the last process step serves as sound entrance and the closed-off back volume 1 a serves as pressure reference.
- a cavity 1 a is provided between the outermost lateral surface of the frame element 3 b of the microphone 3 , the underside of the membrane 3 c and the inner wall of the container 3 .
- Said cavity 1 a serves as pressure reference, as described.
- Electrical conductor tracks are preferably applied on the inner base 2 a of the container 2 , said conductor tracks making electrical contact with the microphone 3 and containing copper, for example.
- the conductor tracks can electrically connect the microphone toward the outside via plated-through holes (not shown) present in the base of the container.
- the container 2 consists of or contains preferably a ceramic having an electrically high insulating property.
- the container or the carrier substrate can contain a ceramic basis, i.e. HTCC (High Temperature Cofired Ceramics) or LTCC (Low Temperature Cofired Ceramics), or an organic basis such as, for example, on the basis of epoxide, phenol, polyimide, bismaleimide-triazine, cyanate esters, PTFE (polytetrafluoroethylene).
- a ceramic basis i.e. HTCC (High Temperature Cofired Ceramics) or LTCC (Low Temperature Cofired Ceramics)
- an organic basis such as, for example, on the basis of epoxide, phenol, polyimide, bismaleimide-triazine, cyanate esters, PTFE (polytetrafluoroethylene).
- inorganic fillers such as e.g. quartz or ceramic particles, glass fiber or a glass film, or else an organic fiber reinforcement, such as e.g. aramid.
- the container can contain or consist of high-
- polyetherimide polyaryl ether ketones, polysulfone, polyphenylene sulfide, polyamide-imide, polyamide, polyphthalamide or polybutylene terephthalate, in particular those in MID processing (Molded Interconnect Device). Glass or silicon is furthermore suitable.
- Passive or active components can additionally be arranged in the container 2 , at least a portion of which components can be connected up to the MST component 3 or to the microphone 3 .
- these additional components comprise, for example, amplifiers or AD converters and devices for protection against EMI (Electromagnetic Interference) and ESD (Electrostatic Discharge).
- FIG. 2 shows the MST device 1 in accordance with FIG. 1 , on which a cover layer 4 is additionally laminated.
- the cover layer 4 spans and encapsulates both the cavity 1 a and the top side of the MST component 3 .
- the cover layer 4 can be embodied as a self-adhesive polymer or metal film with adhesive coating.
- the top side of the MST component is arranged flush with the container.
- FIG. 3 shows the MST device, here the electromechanical transducer, wherein a cutout 4 a has been produced in the cover layer 4 , for example by means of laser ablation.
- the cutout 4 a runs on the top side of the MST component 3 , wherein a first, outer part of the cover layer between the cutout 4 a and the outer wall of the container 2 and a second, inner part initially covers the top side of the MST component 3 at which later no cover layer 4 is desired.
- the inner part of the cover layer 4 covers the acoustic front of the microphone 3 shown in this figure.
- the cutout 4 a preferably uncovers a region on the top side of the MST component 3 .
- FIG. 4 shows, by comparison with FIG. 3 , an additional, at least partly electrically conductive layer 5 , which is applied on the cover layer 4 and on that region of the MST component which is uncovered by the cutout 4 a .
- the at least partly electrically conductive layer 5 is preferably a seed layer 5 .
- the metal layer 5 preferably comprises titanium applied by sputtering with a thickness of approximately 100 nm or copper applied by sputtering with a thickness of approximately 200 nm.
- FIG. 5 shows, by comparison with FIG. 4 , a widened cutout 4 a .
- the cutout severs the seed layer 5 , such that an inner region of the seed layer is electrically insulated from an outer region of the seed layer.
- the outer region of the seed layer covers the outer region of the cover layer 4 in a manner overlapping onto the top side of the MST component 3 .
- the inner region of the cover layer 4 and the area adhering to the MST component 3 are reduced in size by the extended cutout 4 a . That means that the inner region of the cover layer 4 can later be detached from the MST component 3 more easily.
- the inner region of the cover layer 4 in this case overlaps the inner edge of the top side of the MST component 3 only slightly.
- an overlapping for the seed layer 5 onto the top side of the MST component 3 is preferably avoided.
- FIG. 6 shows an electroplated MST component 1 , wherein a metal layer 6 is deposited electrolytically on the seed layer 5 and coats a portion of the top side of the MST component 3 uncovered by the cutout 4 a .
- a metal layer 6 is deposited electrolytically on the seed layer 5 and coats a portion of the top side of the MST component 3 uncovered by the cutout 4 a .
- the metal layer covers only the outer region of the cover layer.
- the entire cover layer is also mechanically strengthened by means of the metal layer 6 applied electrolytically.
- the metal layer 6 furthermore has the advantage of acting as an electromagnetic shielding structure that protects the component or components arranged in the container against externally acting electromagnetic interference.
- the metal layer 6 applied electrolytically preferably consists of partial layers, in particular composed of Cu and Ni having a total thickness—together with the seed layer—of typically 10 to 100 ⁇ m or more.
- FIG. 7 shows, by comparison with FIG. 6 , an additional lift-off film 7 laminated onto the electromechanical transducer, for example a so-called “UV release tape”.
- the lift-off film contains or consists of a material sensitive to UV light, in accordance with the description of the previous description section.
- the lift-off film initially adheres uniformly on the entire top side of the cover layer 4 .
- FIG. 8 shows the exposure of the lift-off film 7 , wherein the adhesive strength of the lift-off film is reduced by means of UV light 9 in the outer region of the cover layer 4 in a manner structured by means of a photomask 8 , while the inner region maintains its adhesion.
- FIG. 9 shows the MST device after the inner region of the cover layer 4 has been selectively detached by means of the lift-off film 7 , wherein, after the UV irradiation 9 in accordance with the preceding figure, the inner region of the cover layer adheres to the lift-off film more strongly than the outer region of the cover layer.
- the opening 10 is produced in the process, said opening enabling free access to component structures of the MST component 3 , for example the membrane 3 c in FIG. 1 .
- the method described can preferably be employed for the production of MST devices having encapsulated MST components and, in particular, of electromagnetic transducers on a single substrate, referred to as panel hereinafter.
- the electromechanical transducers or correspondingly other MST devices can be produced together in a certain quantity and then be singulated.
- the singulation can be effected by means of high-speed separating sawing or alternative methods such as, for instance, stamping or milling.
- a further advantage of this production method and of the subsequent singulation resides in the possibility of testing the MST devices prior to singulation, wherein the handling is significantly simpler and more efficient than after singulation.
- the method makes it possible, elegantly and economically, to carry out whole-area deposition methods optionally including in an aqueous milieu, wherein component structures of the MST components that are actually sensitive to these conditions are outstandingly protected. After all, the sensitive component structures are subsequently uncovered again by the removal of the inner region.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Micromachines (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008032319.5 | 2008-07-09 | ||
DE102008032319A DE102008032319B4 (de) | 2008-07-09 | 2008-07-09 | Verfahren zur Herstellung eines MST Bauteils |
DE102008032319 | 2008-07-09 | ||
PCT/EP2009/058520 WO2010003925A2 (de) | 2008-07-09 | 2009-07-06 | Verfahren zur herstellung eines mst bauteils und mst bauteil |
Publications (2)
Publication Number | Publication Date |
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US20110180885A1 US20110180885A1 (en) | 2011-07-28 |
US9051174B2 true US9051174B2 (en) | 2015-06-09 |
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US13/003,148 Active 2031-01-05 US9051174B2 (en) | 2008-07-09 | 2009-07-06 | Method for encapsulating an MEMS component |
Country Status (5)
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US (1) | US9051174B2 (ja) |
JP (1) | JP5530432B2 (ja) |
DE (1) | DE102008032319B4 (ja) |
GB (1) | GB2475186B (ja) |
WO (1) | WO2010003925A2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8542850B2 (en) * | 2007-09-12 | 2013-09-24 | Epcos Pte Ltd | Miniature microphone assembly with hydrophobic surface coating |
DE102007058951B4 (de) * | 2007-12-07 | 2020-03-26 | Snaptrack, Inc. | MEMS Package |
DE102010006132B4 (de) | 2010-01-29 | 2013-05-08 | Epcos Ag | Miniaturisiertes elektrisches Bauelement mit einem Stapel aus einem MEMS und einem ASIC |
DE102012101505B4 (de) * | 2012-02-24 | 2016-03-03 | Epcos Ag | Verfahren zur Herstellung eines Sensors |
JP2013211505A (ja) * | 2012-03-02 | 2013-10-10 | Fujifilm Corp | 半導体装置の製造方法 |
US8987871B2 (en) * | 2012-05-31 | 2015-03-24 | Stmicroelectronics Pte Ltd. | Cap for a microelectromechanical system device with electromagnetic shielding, and method of manufacture |
US9002038B2 (en) | 2012-09-10 | 2015-04-07 | Robert Bosch Gmbh | MEMS microphone package with molded interconnect device |
DE102014106818B3 (de) * | 2014-05-14 | 2015-11-12 | Epcos Ag | Mikrofon |
US10575374B2 (en) * | 2018-03-09 | 2020-02-25 | Ledengin, Inc. | Package for flip-chip LEDs with close spacing of LED chips |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0510838A (ja) | 1991-07-08 | 1993-01-19 | Mitsubishi Electric Corp | 圧力検出装置 |
JPH11230846A (ja) | 1998-02-09 | 1999-08-27 | Denso Corp | 半導体力学量センサの製造方法 |
US6781231B2 (en) | 2002-09-10 | 2004-08-24 | Knowles Electronics Llc | Microelectromechanical system package with environmental and interference shield |
DE10342981A1 (de) * | 2003-09-17 | 2005-04-21 | Disco Hi Tec Europ Gmbh | Vorrichtung zur partiellen Bearbeitung von Wafern sowie Verfahren zum selektiven Aufbringen einer Folie auf definierte Bereiche eines Wafers |
US20050189635A1 (en) * | 2004-03-01 | 2005-09-01 | Tessera, Inc. | Packaged acoustic and electromagnetic transducer chips |
EP1722596A1 (en) | 2004-03-09 | 2006-11-15 | Matsushita Electric Industrial Co., Ltd. | Electret capacitor microphone |
US20070013036A1 (en) | 2005-07-15 | 2007-01-18 | Silicon Matrix Pte Ltd | MEMS package using flexible substrates, and method thereof |
US7166910B2 (en) | 2000-11-28 | 2007-01-23 | Knowles Electronics Llc | Miniature silicon condenser microphone |
WO2007054070A1 (de) * | 2005-11-10 | 2007-05-18 | Epcos Ag | Mems-package und verfahren zur herstellung |
DE102006005419A1 (de) | 2006-02-03 | 2007-08-16 | Infineon Technologies Ag | Mikroelektromechanisches Halbleiterbauelement mit Hohlraumstruktur und Verfahren zur Herstellung desselben |
US20070190691A1 (en) * | 2006-01-23 | 2007-08-16 | Tessera Technologies Hungary Kft. | Wafer level chip packaging |
DE102006046292A1 (de) | 2006-09-29 | 2008-04-03 | Epcos Ag | Bauelement mit MEMS-Mikrofon und Verfahren zur Herstellung |
US7843055B2 (en) | 2006-04-10 | 2010-11-30 | Infineon Technologies Ag | Semiconductor device having an adhesion promoting layer and method for producing it |
-
2008
- 2008-07-09 DE DE102008032319A patent/DE102008032319B4/de active Active
-
2009
- 2009-07-06 GB GB1101277.0A patent/GB2475186B/en not_active Expired - Fee Related
- 2009-07-06 US US13/003,148 patent/US9051174B2/en active Active
- 2009-07-06 JP JP2011517119A patent/JP5530432B2/ja not_active Expired - Fee Related
- 2009-07-06 WO PCT/EP2009/058520 patent/WO2010003925A2/de active Application Filing
Patent Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0510838A (ja) | 1991-07-08 | 1993-01-19 | Mitsubishi Electric Corp | 圧力検出装置 |
JPH11230846A (ja) | 1998-02-09 | 1999-08-27 | Denso Corp | 半導体力学量センサの製造方法 |
US7242089B2 (en) | 2000-11-28 | 2007-07-10 | Knowles Electronics, Llc | Miniature silicon condenser microphone |
US7166910B2 (en) | 2000-11-28 | 2007-01-23 | Knowles Electronics Llc | Miniature silicon condenser microphone |
US6781231B2 (en) | 2002-09-10 | 2004-08-24 | Knowles Electronics Llc | Microelectromechanical system package with environmental and interference shield |
DE10342981A1 (de) * | 2003-09-17 | 2005-04-21 | Disco Hi Tec Europ Gmbh | Vorrichtung zur partiellen Bearbeitung von Wafern sowie Verfahren zum selektiven Aufbringen einer Folie auf definierte Bereiche eines Wafers |
US20050189635A1 (en) * | 2004-03-01 | 2005-09-01 | Tessera, Inc. | Packaged acoustic and electromagnetic transducer chips |
EP1722596A1 (en) | 2004-03-09 | 2006-11-15 | Matsushita Electric Industrial Co., Ltd. | Electret capacitor microphone |
US20070013036A1 (en) | 2005-07-15 | 2007-01-18 | Silicon Matrix Pte Ltd | MEMS package using flexible substrates, and method thereof |
WO2007054070A1 (de) * | 2005-11-10 | 2007-05-18 | Epcos Ag | Mems-package und verfahren zur herstellung |
US8169041B2 (en) * | 2005-11-10 | 2012-05-01 | Epcos Ag | MEMS package and method for the production thereof |
US20070190691A1 (en) * | 2006-01-23 | 2007-08-16 | Tessera Technologies Hungary Kft. | Wafer level chip packaging |
DE102006005419A1 (de) | 2006-02-03 | 2007-08-16 | Infineon Technologies Ag | Mikroelektromechanisches Halbleiterbauelement mit Hohlraumstruktur und Verfahren zur Herstellung desselben |
US7843055B2 (en) | 2006-04-10 | 2010-11-30 | Infineon Technologies Ag | Semiconductor device having an adhesion promoting layer and method for producing it |
DE102006046292A1 (de) | 2006-09-29 | 2008-04-03 | Epcos Ag | Bauelement mit MEMS-Mikrofon und Verfahren zur Herstellung |
WO2008040326A1 (de) | 2006-09-29 | 2008-04-10 | Epcos Ag | Bauelement mit mems-mikrofon und verfahren zur herstellung |
US20090232336A1 (en) | 2006-09-29 | 2009-09-17 | Wolfgang Pahl | Component Comprising a MEMS Microphone and Method for the Production of Said Component |
US8218794B2 (en) | 2006-09-29 | 2012-07-10 | Epcos Ag | Component comprising a MEMS microphone and method for the production of said component |
Non-Patent Citations (2)
Title |
---|
International Search Report corresponding to International Patent Application No. PCT/EP2009/058520, European Patent Office, dated Mar. 3, 2010, 3 pages. |
Written Opinion corresponding to International Patent Application No. PCT/EP2009/058520, European Patent Office, dated Mar. 3, 2010, 6 pages. |
Also Published As
Publication number | Publication date |
---|---|
DE102008032319B4 (de) | 2012-06-06 |
JP5530432B2 (ja) | 2014-06-25 |
JP2011527241A (ja) | 2011-10-27 |
DE102008032319A1 (de) | 2010-01-14 |
GB2475186B (en) | 2012-10-10 |
GB2475186A (en) | 2011-05-11 |
WO2010003925A2 (de) | 2010-01-14 |
US20110180885A1 (en) | 2011-07-28 |
WO2010003925A3 (de) | 2010-05-06 |
GB201101277D0 (en) | 2011-03-09 |
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