JP2011527241A - Mst装置を作成するための方法およびmst装置 - Google Patents
Mst装置を作成するための方法およびmst装置 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00309—Processes for packaging MEMS devices suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Micromachines (AREA)
Abstract
Description
当該方法の一実施例によれば、接着剤は、構造化された様式で、つまり幾何学的なパターンで容器端縁とMST部品とに塗布される。好ましくは、接着効果は、塗布中もしくは積層中に、圧力および/または熱によって硬化される。この場合、ホットメルト接着剤もしくはいわゆる「B段階」材料を使用することが可能であり、その接着効果を圧力および/または熱によって発現させることができる。
1 MST装置(電気機械変換器)、1a 空洞、2 容器、2a 容器の内側底部、3 電気機械部品(MST部品)、3a はんだボール、3b フレーム要素、3c 膜、4 被覆層、4a 被覆層の切抜部、5 種層、6 金属層、7 剥離膜、8 フォトマスク、9 UV光、10 開口部。
Claims (15)
- MST部品(3)を封入するための方法であって、
前記MST部品(3)は容器(2)内に配置され、
前記容器は被覆層(4)で閉じられ、
前記被覆層(4)には、リング状のくぼみに閉じられた少なくとも1つの切抜部(4a)が設けられ、切抜部は、内側領域および外側領域の両方が、前記MST部品(3)の、前記被覆層に面する上部側に接続されるように、前記被覆層を内側領域および外側領域に分割し、
前記外側領域が接着したままの状態で、前記内側領域が剥離される、方法。 - 前記被覆層(4)は、前記MST部品(3)および前記容器(2)の上部側に接着接合される、クレーム1に記載の方法。
- 自己接着性の被覆層(4)が使用される、クレーム2に記載の方法。
- 前記容器(2)が前記被覆層で閉じられる前に、被覆層(4)と前記容器(2)の端縁との間、および前記被覆層(4)と前記部品の(3)の上部側との間の接続領域に接着剤が塗布される、クレーム2に記載の方法。
- 前記被覆層にさらなる切抜部が作成され、前記容器の上部側の一領域が露出される、先行するクレームのうちいずれか1項に記載の方法。
- 前記切抜部(4a)は、レーザアブレーションによって前記被覆層(4)に作成される、先行するクレームのうちいずれか1項に記載の方法。
- 前記被覆層(4)は、フォトリソグラフィ処理によって処理可能な材料を含み、マスク露光または走査露光および現像によって構造化される、先行するクレームのうちいずれか1項に記載の方法。
- 前記被覆層(4)および前記切抜部(4a)は、部分的に金属層(5)で被覆される、先行するクレームのうちいずれか1項に記載の方法。
- 複数の容器(2)を含むパネルが設けられ、少なくとも1つのMST部品(3)が前記容器の各々に配置され、前記被覆層(4)は、前記パネルの複数の容器上に塗布される、先行するクレームのうちいずれか1項に記載の方法。
- 前記被覆層(4)の内側領域は、上に積層されていた剥離膜(7)によって引離される、先行するクレームのうちいずれか1項に記載の方法。
- 前記剥離膜(7)は、前記被覆層(4)の内部領域および外側領域上の全域にわたって塗布され、前記被覆層(4)の外側領域上の前記剥離膜(7)の接着強度をUV照射(9)によって低下させる、クレーム10に記載の方法。
- 前記被覆層(4)の前記外側領域上の前記剥離膜(7)は、構造化された様式で照射される、クレーム11に記載の方法。
- マイクロホンが前記MST部品(3)として使用される、先行するクレームのうちいずれか1項に記載の方法。
- 効果的な方法で全域にわたって金属層(5)を前記被覆層(4)上に作成した後、前記金属層(5)および下地である前記被覆層が少なくとも部分的に開口される、先行するクレームのうちいずれか1項に記載の方法。
- MST部品(1)を含む装置であって、
一方側が開いている容器(2)を有し、MST部品(3)が前記容器内に配置されており、
前記容器の内側と前記MST部品との間に空洞(1a)が設けられ、
前記被覆層(4)は前記空洞を被覆し、前記被覆層に面する上部側において前記容器に前記MST部品を接続し、
前記MST部品の一領域は、容器開口部に面する上部側において前記被覆層から解放される、装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008032319.5 | 2008-07-09 | ||
DE102008032319A DE102008032319B4 (de) | 2008-07-09 | 2008-07-09 | Verfahren zur Herstellung eines MST Bauteils |
PCT/EP2009/058520 WO2010003925A2 (de) | 2008-07-09 | 2009-07-06 | Verfahren zur herstellung eines mst bauteils und mst bauteil |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011527241A true JP2011527241A (ja) | 2011-10-27 |
JP2011527241A5 JP2011527241A5 (ja) | 2012-04-05 |
JP5530432B2 JP5530432B2 (ja) | 2014-06-25 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011517119A Expired - Fee Related JP5530432B2 (ja) | 2008-07-09 | 2009-07-06 | Mems装置を作成するための方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9051174B2 (ja) |
JP (1) | JP5530432B2 (ja) |
DE (1) | DE102008032319B4 (ja) |
GB (1) | GB2475186B (ja) |
WO (1) | WO2010003925A2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8542850B2 (en) * | 2007-09-12 | 2013-09-24 | Epcos Pte Ltd | Miniature microphone assembly with hydrophobic surface coating |
DE102007058951B4 (de) * | 2007-12-07 | 2020-03-26 | Snaptrack, Inc. | MEMS Package |
DE102010006132B4 (de) | 2010-01-29 | 2013-05-08 | Epcos Ag | Miniaturisiertes elektrisches Bauelement mit einem Stapel aus einem MEMS und einem ASIC |
DE102012101505B4 (de) * | 2012-02-24 | 2016-03-03 | Epcos Ag | Verfahren zur Herstellung eines Sensors |
JP2013211505A (ja) * | 2012-03-02 | 2013-10-10 | Fujifilm Corp | 半導体装置の製造方法 |
US8987871B2 (en) * | 2012-05-31 | 2015-03-24 | Stmicroelectronics Pte Ltd. | Cap for a microelectromechanical system device with electromagnetic shielding, and method of manufacture |
US9002038B2 (en) | 2012-09-10 | 2015-04-07 | Robert Bosch Gmbh | MEMS microphone package with molded interconnect device |
DE102014106818B3 (de) * | 2014-05-14 | 2015-11-12 | Epcos Ag | Mikrofon |
US10575374B2 (en) * | 2018-03-09 | 2020-02-25 | Ledengin, Inc. | Package for flip-chip LEDs with close spacing of LED chips |
Citations (3)
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JPH0510838A (ja) * | 1991-07-08 | 1993-01-19 | Mitsubishi Electric Corp | 圧力検出装置 |
JPH11230846A (ja) * | 1998-02-09 | 1999-08-27 | Denso Corp | 半導体力学量センサの製造方法 |
WO2008040326A1 (de) * | 2006-09-29 | 2008-04-10 | Epcos Ag | Bauelement mit mems-mikrofon und verfahren zur herstellung |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US7166910B2 (en) | 2000-11-28 | 2007-01-23 | Knowles Electronics Llc | Miniature silicon condenser microphone |
US6781231B2 (en) | 2002-09-10 | 2004-08-24 | Knowles Electronics Llc | Microelectromechanical system package with environmental and interference shield |
DE10342981B4 (de) * | 2003-09-17 | 2007-05-24 | Disco Hi-Tec Europe Gmbh | Verfahren zum selektiven Aufbringen einer Folie auf definierte Bereiche eines Wafers |
US20050189635A1 (en) * | 2004-03-01 | 2005-09-01 | Tessera, Inc. | Packaged acoustic and electromagnetic transducer chips |
CN1926919B (zh) * | 2004-03-09 | 2011-01-26 | 松下电器产业株式会社 | 驻极体电容式麦克风 |
US7202552B2 (en) * | 2005-07-15 | 2007-04-10 | Silicon Matrix Pte. Ltd. | MEMS package using flexible substrates, and method thereof |
DE102005053765B4 (de) * | 2005-11-10 | 2016-04-14 | Epcos Ag | MEMS-Package und Verfahren zur Herstellung |
US7936062B2 (en) * | 2006-01-23 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer level chip packaging |
DE102006005419B4 (de) * | 2006-02-03 | 2019-05-02 | Infineon Technologies Ag | Mikroelektromechanisches Halbleiterbauelement mit Hohlraumstruktur und Verfahren zur Herstellung desselben |
DE102006017115B4 (de) | 2006-04-10 | 2008-08-28 | Infineon Technologies Ag | Halbleiterbauteil mit einem Kunststoffgehäuse und Verfahren zu seiner Herstellung |
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2008
- 2008-07-09 DE DE102008032319A patent/DE102008032319B4/de active Active
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2009
- 2009-07-06 GB GB1101277.0A patent/GB2475186B/en not_active Expired - Fee Related
- 2009-07-06 US US13/003,148 patent/US9051174B2/en active Active
- 2009-07-06 JP JP2011517119A patent/JP5530432B2/ja not_active Expired - Fee Related
- 2009-07-06 WO PCT/EP2009/058520 patent/WO2010003925A2/de active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0510838A (ja) * | 1991-07-08 | 1993-01-19 | Mitsubishi Electric Corp | 圧力検出装置 |
JPH11230846A (ja) * | 1998-02-09 | 1999-08-27 | Denso Corp | 半導体力学量センサの製造方法 |
WO2008040326A1 (de) * | 2006-09-29 | 2008-04-10 | Epcos Ag | Bauelement mit mems-mikrofon und verfahren zur herstellung |
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DE102008032319B4 (de) | 2012-06-06 |
JP5530432B2 (ja) | 2014-06-25 |
DE102008032319A1 (de) | 2010-01-14 |
GB2475186B (en) | 2012-10-10 |
GB2475186A (en) | 2011-05-11 |
WO2010003925A2 (de) | 2010-01-14 |
US20110180885A1 (en) | 2011-07-28 |
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GB201101277D0 (en) | 2011-03-09 |
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