US8616732B2 - Light-emitting device and illumination device - Google Patents

Light-emitting device and illumination device Download PDF

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Publication number
US8616732B2
US8616732B2 US13/024,376 US201113024376A US8616732B2 US 8616732 B2 US8616732 B2 US 8616732B2 US 201113024376 A US201113024376 A US 201113024376A US 8616732 B2 US8616732 B2 US 8616732B2
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Prior art keywords
light
substrate
area
reflection layer
engagement protrusion
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US13/024,376
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US20110199772A1 (en
Inventor
Soichi Shibusawa
Kozo Ogawa
Kiyoshi Nishimura
Nobuhiko Betsuda
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Toshiba Lighting and Technology Corp
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Toshiba Lighting and Technology Corp
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Priority claimed from JP2010029542A external-priority patent/JP5515822B2/ja
Priority claimed from JP2011010021A external-priority patent/JP2012151358A/ja
Application filed by Toshiba Lighting and Technology Corp filed Critical Toshiba Lighting and Technology Corp
Assigned to TOSHIBA LIGHTING & TECHNOLOGY COPORATION reassignment TOSHIBA LIGHTING & TECHNOLOGY COPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: Betsuda, Nobuhiko, NISHIMURA, KIYOSHI, OGAWA, KOZO, Shibusawa, Soichi
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/68—Details of reflectors forming part of the light source
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • F21V19/003—Fastening of light source holders, e.g. of circuit boards or substrates holding light sources
    • F21V19/0055—Fastening of light source holders, e.g. of circuit boards or substrates holding light sources by screwing
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V31/00—Gas-tight or water-tight arrangements
    • F21V31/04—Provision of filling media
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S8/00—Lighting devices intended for fixed installation
    • F21S8/04—Lighting devices intended for fixed installation intended only for mounting on a ceiling or the like overhead structures
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2103/00—Elongate light sources, e.g. fluorescent tubes
    • F21Y2103/10—Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components

Definitions

  • Embodiments described herein relate generally to a light-emitting device and illumination device using a light-emitting element such as a light-emitting diode (LED) or the like.
  • a light-emitting element such as a light-emitting diode (LED) or the like.
  • illumination devices using a plurality of light-emitting diodes as a light source have been put into practical use.
  • the illumination devices of this type are used as, for example, surface-mounted general lighting which is directly mounted on the indoor ceiling.
  • a light-emitting diode is mounted on a substrate, and is sealed with a sealing member.
  • a sealing member For example, a material obtained by mixing a fluorescent substance into a transparent silicon resin or the like can be used as the sealing member.
  • the sealing member is poured into the inside of a framework member surrounding the light-emitting diode to be solidified, for example.
  • a framework member lowers the luminous efficacy of the light-emitting diode.
  • the sealing member When the framework member is not provided, the sealing member is bonded to the substrate. When force, for example lateral force, is applied to the sealing member, the sealing member is liable to be exfoliated from the substrate.
  • FIG. 1 is a schematic view of a light-emitting device according to a first embodiment viewed from the top surface side.
  • FIG. 2 is a schematic view showing a conductor pattern on a substrate of the light-emitting device of FIG. 1 .
  • FIG. 3 is a schematic view showing a state where a second conductor pattern is removed from the substrate of FIG. 2 , and a plurality of light-emitting diodes are mounted thereon.
  • FIG. 4 is a schematic view of the substrate of FIG. 2 viewed from the back surface side.
  • FIG. 5 is a cross-sectional view taken along line F 5 -F 5 of FIG. 1 .
  • FIG. 6 is a connection diagram showing connection state of the plurality of light-emitting diodes.
  • FIG. 7 is a perspective view of an illumination device in which the light-emitting device of FIG. 1 is incorporated.
  • FIG. 8 is a schematic view of a light-emitting device according to a second embodiment viewed from the top surface side.
  • FIG. 9 is a cross-sectional view of a light-emitting device according to a third embodiment.
  • FIG. 10 is a partially-enlarged cross-sectional view in which an important part of FIG. 9 is partially enlarged.
  • FIG. 11 is a cross-sectional view showing a modification example of the light-emitting device of FIG. 9 .
  • a light-emitting device 1 comprises a substrate 2 on a surface 5 a of which a light-emitting element 3 is mounted; a light reflection layer 48 formed on a second area of the surface of the substrate other than a first area S on which the light-emitting element 3 is mounted; and a sealing member 4 a , 4 b sealing the light-emitting element 3 .
  • An engagement protrusion part 48 a protruding toward the sealing member 4 a , 4 b is provided at an edge part of the light reflection layer 48 at which the light reflection layer 48 is in contact with the area S on which the light-emitting element 3 is mounted.
  • the engagement protrusion part 48 a juts out into the sealing member 4 a , 4 b to prevent exfoliation of the sealing Member 4 a , 4 b.
  • FIGS. 1 to 6 show a light-emitting device 1
  • FIG. 7 shows an illumination device 100 using this light-emitting device 1 . It should be noted that in each drawing, the same parts are denoted by the same reference symbols, and a duplicate description is omitted.
  • the light-emitting device 1 serving as an illumination light source comprises a substrate 2 , a plurality of light-emitting elements 3 , and a pair of sealing members 4 a and 4 b .
  • the substrate 2 is formed of a synthetic resin material such as a glass epoxy resin.
  • the substrate 2 is formed into a long and thin shape having a pair of long sides 2 a and 2 b , and a pair of short sides 2 c and 2 d .
  • the substrate 2 has a first surface 5 a , second surface 5 b positioned on the opposite side of the first surface 5 a , and outer peripheral surface 5 c connecting the first surface 5 a and second surface 5 b to each other. Both the first and second surfaces 5 a and 5 b are flat surfaces.
  • a length of the substrate 2 along the long side 2 a or 2 b is 230 mm, and width thereof along the short side 2 c or 2 d is 35 mm. Furthermore, it is desirable that a thickness of the substrate 2 be 0.5 mm to 1.8 mm. In this embodiment, a substrate 2 having a thickness dimension of 1.0 mm is used.
  • the shape of the substrate 2 is not limited to the rectangular shape, and may be a square or circular shape. Further, as the material for the substrate 2 , ceramics material or other synthetic resin materials can be used. Furthermore, in order to enhance the heat radiation performance of each light-emitting element 3 , a metallic substrate in which an insulating layer is formed on one surface of a base plate made of aluminum or the like, having high thermal conductivity, and excellent in heat radiation may be used as the substrate 2 .
  • a plurality of piercing parts 6 are formed at end edges defining the long sides 2 a and 2 b of the substrate 2 .
  • the piercing parts 6 are arcuate cutout parts opened to the outer peripheral surface 5 c of the substrate 2 , and pierce through the substrate 2 in a thickness direction. Furthermore, the piercing parts 6 are arranged at intervals in the longitudinal direction of the substrate 2 .
  • a plurality of screws 8 are inserted through the respective piercing parts 6 .
  • the screws 8 are an example of fixing parts configured to fix the substrate 2 to a base of the illumination device, and are screwed into the base through the piercing parts 6 .
  • the end edge of the substrate 2 is held between head parts of the screws 8 and the base.
  • the substrate 2 is fixed to the base.
  • the first conductor pattern 10 includes, for example, nine pads 12 , a positive power supply conductor 13 , negative power supply conductor 14 , and relay conductor 15 .
  • the pads 12 have a rectangular shape, and are arranged in line at intervals in the longitudinal direction of the substrate 2 .
  • Each pad 12 is divided into a first mounting area 16 a and second mounting area 16 b by a slit 12 a .
  • the slit 12 a linearly extends in a central part of the pad 12 in the longitudinal direction of the substrate 2 , and is opened to one end of the pad 12 .
  • Six depressed parts 17 are formed in the first mounting area 16 a of each pad 12 .
  • the depressed parts 17 are opened to one side edge of the pad 12 , and are arranged in line at intervals in the longitudinal direction of the substrate 2 .
  • six depressed parts 17 are formed in the second mounting area 16 b of each pad 12 .
  • the depressed parts 17 are opened to the slit 12 a , and are arranged in line at intervals in the longitudinal direction of the substrate 2 .
  • each of the pads 12 other than one pad 12 positioned at the left end of the substrate 2 has a pair of extension parts 19 a and 19 b .
  • the extension parts 19 a and 19 b linearly extend from one end of the pad 12 in the longitudinal direction of the substrate 2 , and are arranged in parallel with each other with an interval held between them.
  • Each of the extension parts 19 a and 19 b has six power supply terminals 20 .
  • the power supply terminals 20 are projected from the extension parts 19 a and 19 b , and are arranged in line at intervals in the longitudinal direction of the substrate 2 .
  • One extension part 19 a of each pad 12 extends along one side edge of the adjacent pad 12 .
  • the power supply terminals 20 of the extension part 19 a are inserted into the respective depressed parts 17 opened to one side edge of the pad 12 .
  • the extension part 19 a and the side edge of the pad 12 are electrically separated from each other by providing an insulating space between them.
  • the power supply terminals 20 of the extension part 19 a and depressed parts 17 are electrically separated from each other by providing insulating spaces between them.
  • the other extension part 19 b of each pad 12 is inserted into the slit 12 a of the adjacent pad 12 .
  • the power supply terminals 20 of the extension part 19 b are inserted into the respective depressed parts 17 opened to the slit 12 a .
  • the extension part 19 b and pad 12 are electrically separated, from each other by an insulating space positioned inside the slit 12 a .
  • the power supply terminals 20 of the extension part 19 b and depressed parts 17 are electrically separated from each other by providing insulating spaces between them.
  • the plurality of pads 12 are arranged in line in the longitudinal direction of the substrate 2 , in a state where the extension parts 19 a and 19 b are alternately reversed in the width direction of the substrate 2 .
  • the positive power supply conductor 13 extends over the whole length of the substrate 2 to run along the long side 2 b of the substrate 2 .
  • the negative power supply conductor 14 extends in the longitudinal direction of the substrate 2 to run along the long side 2 b of the substrate 2 .
  • the left end of the negative power supply conductor 14 is connected to the pad 12 positioned at the left end of the substrate 2 .
  • the positive power supply conductor 13 has a positive electrode terminal 21 .
  • the negative power supply conductor 14 has a negative electrode terminal 22 .
  • the positive electrode terminal 21 and negative electrode terminal 22 are arranged side by side with an interval held between them at the left end part of the substrate 2 .
  • the relay conductor 15 extends in the longitudinal direction of the substrate 2 to run along the long side 2 b of the substrate 2 .
  • the relay conductor 15 is positioned at a right end part of the substrate 2 .
  • the relay conductor 15 includes a pair of power supply patterns 24 a and 24 b .
  • the power supply patterns 24 a and 24 b linearly extend in the longitudinal direction of the substrate 2 , and are arranged in parallel with each other with an interval held between them.
  • Each of the power supply patterns 24 a and 24 b has six power supply terminals 25 .
  • the power supply terminals 25 are projected from the power supply patterns 24 a and 24 b , and are arranged in line at intervals in the longitudinal direction of the substrate 2 .
  • One power supply pattern 24 a extends along one side edge of the pad 12 positioned at the right end of the substrate 2 .
  • the power supply terminals 25 of the power supply pattern 24 a are inserted into the respective depressed parts 17 opened to the side edge of the pad 12 .
  • the power supply pattern 24 a and side edge of the pad 12 are electrically separated from each other by providing an insulating space between them.
  • the power supply terminals 25 of the power supply pattern 24 a and the depressed parts 17 of the pad 12 are electrically separated from each other by providing insulating spaces between them.
  • the other power supply pattern 24 b is inserted into the slit 12 a of the pad 12 positioned at the right end of the substrate 2 .
  • the power supply terminals 25 of the power supply pattern 24 b are inserted into the respective depressed parts 17 opened to the slit 12 a .
  • the power supply pattern 24 b and pad 12 are electrically separated from each other by an insulating space positioned inside the slit 12 a .
  • the power supply terminals 25 of the power supply pattern 24 b and the depressed parts 17 of the pad 12 are electrically separated from each other by providing insulating spaces between them.
  • a power supply connector 26 is soldered to the positive electrode terminal 21 and negative electrode terminal 22 .
  • the power supply connector 26 is positioned on the first surface 5 a of the substrate 2 , and is electrically connected to a power supply circuit through lead wires 26 a . Furthermore, the negative power supply conductor 14 and relay conductor 15 are short-circuited through a relay connector 27 .
  • the first conductor pattern 10 including the pads 12 has a three-layer structure including a copper layer 28 , nickel-plated layer 29 , and silver-plated layer 30 .
  • the copper layer 28 is formed by etching a copper foil layer formed on the first surface 5 a of the substrate 2 .
  • the nickel-plated layer 29 is formed on the copper layer 28 by subjecting the copper layer 28 to electrolytic plating.
  • the silver-plated layer 30 is formed on the nickel-plated layer 29 by subjecting the nickel-plated layer 29 to electrolytic plating.
  • the silver-plated layer 30 covers the nickel-plated layer 29 , and constitutes a reflecting layer exposed on the surface of the first conductor pattern 10 . Therefore, the surface of the first conductor pattern 10 is a light-reflecting surface. The total reflectivity of this light-reflecting surface is about 90%.
  • the nickel-plated layer 29 should have a film thickness of 5 ⁇ m or more.
  • the silver-plated layer 30 should have a film thickness of 1 ⁇ m or more.
  • the second conductor pattern 11 is used for maintaining all the pads 12 at the same potential when the pads 12 of the first conductor pattern 10 are subjected to electrolytic plating. More specifically, the second conductor pattern 11 includes a common line 32 and a plurality of branch lines 33 as shown in FIG. 2 .
  • the common line 32 linearly extends over the whole length of the substrate 2 to run along the long side 2 a of the substrate 2 . At the same time, the common line 32 is separate from the end edge of the substrate 2 by a predetermined distance D, the end edge defining the long side 2 a of the substrate 2 .
  • the common line 32 has a plurality of curved parts 34 at positions corresponding to the piercing parts 6 of the substrate 2 .
  • Each of the curved parts 34 is arcuately curved in a direction in which a distance from the edge of the piercing part 6 becomes larger.
  • the common line 32 is separate from the edges of the piercing parts 6 , by at least the same distance as the distance D at positions corresponding to the piercing parts 6 .
  • the branch lines 33 are branched from the common line 32 , and linearly extend toward the pads 12 .
  • the branch lines 33 are arranged at intervals in the longitudinal direction of the substrate 2 . Distal ends of the branch lines 33 are electrically connected to all the pads 12 and power supply pattern 24 a of the relay conductor 15 . In other words, all the pads 12 and relay conductor 15 are electrically connected to the common line 32 through the branch lines 33 .
  • the second conductor pattern 11 is formed on the first surface 5 a of the substrate 2 simultaneously with the first conductor pattern 10 , and has the same three-layer structure as that of the first conductor pattern 10 . Therefore, the surface of the second conductor pattern 11 is formed of a silver-plated layer, and has light reflectivity.
  • Each of the plurality of light-emitting elements 3 is constituted of a paired chip of light-emitting diodes (LEDs).
  • white light is emitted through the light-emitting device 1 , and hence light-emitting elements 3 configured to emit blue light are used.
  • the LED paired chip 3 is, for example, an InGaN-based element, in which light-emitting layers are formed on a translucent sapphire element board.
  • the light-emitting layers are formed by depositing an n-type nitride semiconductor layer, InGaN light-emitting layer, and p-type nitride semiconductor layer one on top of another.
  • electrodes configured to cause a current to flow through the light-emitting layers are constituted of a positive electrode formed of a p-type electrode pad on the p-type nitride semiconductor layer, and negative electrode formed of an n-type electrode pad on the n-type nitride semiconductor layer.
  • the light-emitting elements 3 are individually attached to the first mounting area 16 a and second mounting area 16 b of each pad 12 through a silicon resin adhesive 36 . More specifically, six light-emitting elements 3 are arranged in the first mounting area 16 a of each pad 12 in line at intervals in the longitudinal direction of the substrate 2 , and six light-emitting elements 3 are arranged in the second mounting area 16 b of each pad 12 in line at intervals in the longitudinal direction of the substrate 2 . Accordingly, each pad 12 includes twelve light-emitting elements 3 .
  • the light-emitting elements 3 on each pad 12 constitute two rows of light-emitting elements which are successively arranged in the longitudinal direction of the substrate 2 .
  • each light-emitting element 3 is electrically connected to the pad 12 to which the light-emitting element 3 is affixed, through a bonding wire 38 .
  • the negative electrode of each light-emitting element 3 is electrically connected to each of the power supply terminals 20 of the adjacent pad 12 and each of power supply terminals 25 of the power supply patterns 24 a and 24 b by another bonding wire 39 .
  • These bonding wires 38 and 39 are constituted of a gold (Au) thin wire and, for the purpose of improving the mounting strength, and reducing the damage of the LED paired chip, are connected through bumps a chief ingredient of which is gold (Au).
  • the light-emitting device 1 has nine parallel circuits 40 a , 40 b , 40 c , 40 d , 40 e , 40 f , 40 g , 40 h , and 40 i , in each of which twelve light-emitting elements 3 are connected in parallel. Furthermore, the nine parallel circuits 40 a , 40 b , 40 c , 40 d , 40 e , 40 f , 40 g , 40 h , and 40 i are connected in series.
  • a capacitor 41 is connected to each of the nine parallel circuits 40 a , 40 b , 40 c , 40 d , 40 e , 40 f , 40 g , 40 h , and 40 i .
  • a capacitor 41 is also connected to a circuit configured to connect the parallel circuits 40 a , 40 b , 40 c , 40 d , 40 e , 40 f , 40 g , 40 h , and 40 i in series.
  • the capacitors 41 are mounted on the first surface 5 a of the substrate 2
  • the power supply terminals 20 and 25 to which the bonding wires 39 are connected are inserted into the depressed parts 17 of the adjacent pad 12 .
  • the power supply terminals 20 and 25 advance toward the central parts of the first and the second mounting areas 16 a and 16 b , and hence the light-emitting elements 3 can be affixed to the central parts of the first and the second mounting areas 16 a and 16 b , without changing the lengths of the bonding wires 38 and 39 . Therefore, it is possible to conduct the heat generated by the light-emitting elements 3 to a wide range of the first and the second mounting areas 16 a and 16 b , and efficiently radiate the heat from the pads 12 .
  • the second conductor pattern 11 configured to maintain all the pads 12 at the same potential becomes useless after the first conductor pattern 10 is subjected to electrolytic plating. Therefore, in this embodiment, after the first conductor pattern 10 is subjected to electrolytic plating, the common line 32 of the second conductor pattern 11 is removed to thereby sever electrical connection between the pads 12 obtained by the second conductor pattern 11 .
  • a depressed part 45 is formed in the first surface 5 a of the substrate 2 .
  • the depressed part 45 is traces which are left after the common line 32 is removed, and extends along the long side 2 a of the substrate 2 .
  • the depressed part 45 is a groove which is defined by a bottom surface 45 a and a pair of side surfaces 45 b and 45 c , and is opened to the first surface 5 a of the substrate 2 .
  • the depressed part 45 has a plurality of curved parts 46 at positions corresponding to the piercing parts 6 of the substrate 2 .
  • the curved parts 46 are formed into a shape coinciding with the shape of the curved parts 34 of the common line 32 in such a manner that the parts 46 detour around the piercing parts 6 .
  • the depressed part 45 having the above structure is positioned between the end edge of the substrate 2 , which defines the long side 2 a of the substrate 2 , and the pads 12 , and is separate from the end edge of the substrate 2 by a predetermined distance.
  • the depressed part 45 has a width dimension of 1 mm, and depth dimension of 0.3 mm.
  • a creepage distance from the end edge of the substrate 2 which defines the long side 2 a of the substrate 2 to the pads 12 is a value obtained by adding the height dimensions of the side surfaces 45 b and 45 c of the depressed part 45 to the original distance. Therefore, the creepage distance becomes longer than the clearance (spatial distance) from the end edge of the substrate 2 to the pads 12 by a dimension corresponding to the depth of the depressed part 45 .
  • the shape of the depressed part 45 is not limited to that of this embodiment.
  • the depressed part 45 may have a V-shaped or U-shaped cross section in the direction perpendicular to the longitudinal direction of the substrate 2 .
  • the sealing members 4 a and 4 b seal the light-emitting elements 3 which are arranged in two lines, and bonding wires 38 and 39 on the pads 12 .
  • the sealing members 4 a and 4 b are made of a transparent silicon resin in which an adequate amount of a fluorescent substance such as YAG, Ce or the like is mixed, are formed by coating in such a manner that their cross-sectional shape becomes a flat mountain shape, and linearly extend in the longitudinal direction of the substrate 2 .
  • the fluorescent substance is excited by light emitted from the light-emitting element 3 , and radiates light of a color different from the color of the light emitted from the light-emitting element 3 .
  • the light-emitting element 3 emits blue light, and hence a yellow fluorescent substance configured to radiate light of the yellow color in a complementary chromatic relationship to the blue color of the light is used as the fluorescent substance so that the light-emitting device 1 can emit light of the white color.
  • the first surface 5 a of the substrate 2 is covered with a white resist layer 48 , except for areas on which parts such as the light-emitting elements 3 and capacitors 41 are mounted.
  • a white resist layer 48 is covered with a white resist layer 48 , except for areas on which parts such as the light-emitting elements 3 and capacitors 41 are mounted.
  • an area S in which no resist layer 48 is formed is representatively shown on the second pad 12 from the right.
  • an area S in which no resist layer 48 is formed is present.
  • At least a part to which a light-emitting element 3 (LED paired chip) is affixed, i.e., a mounting part of the light-emitting element 3 corresponds to the area S in which no resist layer 48 is formed.
  • the area S is buried by the sealing member 4 a or 4 b to be sealed as shown in FIG. 1 and FIG. 5 .
  • the resist layer 48 has light reflectivity.
  • the resist layer 48 continuously covers the first conductor pattern 10 , branch lines 33 , and depressed part 45 except the above-mentioned areas S. Therefore, the first conductor pattern 10 , branch lines 33 , and depressed part 45 on the first surface 5 a of the substrate 2 are not easily viewed.
  • the pads 12 are formed on the first surface 5 a of the substrate 2 , and the resist layer 48 is formed on the pads 12 .
  • an engagement protrusion part 48 a protruded toward the sealing member is provided to prevent exfoliation of the sealing member 4 a or 4 b .
  • an engagement protrusion part 48 a a cross-sectional shape of which is inclined from the surface of the resist layer 48 toward the light-reflecting surface of the pad 12 in a direction in which the area S is extended is formed at the edge of the area S.
  • the engagement protrusion part 48 a may be provided on the entire circumference along the edge of the resist layer 48 which is the boundary between the rest layer 48 and area S, it is sufficient if the engagement protrusion part 48 a is provided at each of at least several positions on the edge of the resist layer 48 in a studding manner.
  • the shape of the engagement protrusion part 48 a is not limited to that of this embodiment, and may be any such shape that when the part 48 a is inserted into the sealing member 4 a or 4 b , the part 48 a is caught on the sealing member.
  • the resist layer 48 is formed of a white photoresist material. Further, the resist layer 48 bears a function of reflecting light emitted from the light-emitting element 3 in the frontward direction (upward direction in FIG. 5 ), and function of preventing the metallic layers such as the pads 12 , power supply conductors 13 and 14 , and the like from being corroded. In order to reflect the light emitted from the light-emitting element 3 from the surface of the resist layer 48 , it is necessary to make the top surface of the light-emitting element 3 higher than at least the surface of the resist layer 48 . In other words, it is desirable that the surface of the resist layer 48 be formed at a position lower than the top surface of the light-emitting element 3 .
  • the thickness of each pad 12 is set at 35 ⁇ m
  • thickness of the resist layer 48 is set at 40 ⁇ m
  • height of the light-emitting element 3 is set at 80 ⁇ m. It is desirable that the thickness of the resist layer 48 be set at a value from 30 to 40 ⁇ m and, for example, when the thickness of the resist layer 48 is to be changed to 30 ⁇ m, it is sufficient if the thickness of the pad 12 is made less than 30 ⁇ m.
  • the heat-radiation sheets 50 are an example of conductors, and are formed of copper foil excellent in thermal conductivity.
  • the heat-radiation sheets 50 are arranged in two lines at intervals in the longitudinal direction of the substrate 2 in such a manner that the sheets 50 correspond to the pads 12 on the first surface 5 a .
  • Heat-radiation sheets 50 adjacent to each other are thermally separated from each other by a first slit 51 extending the longitudinal direction of the substrate 2 , and a plurality of second slits 52 each extending in a lateral direction perpendicular to the longitudinal direction of the substrate 2 .
  • the heat-radiation sheets 50 and second surface 5 b of the Substrate 2 are covered with a resist layer 53 .
  • the thermal radiation performance of the substrate 2 can be enhanced.
  • the second slits 52 extending in the direction perpendicular to the longitudinal direction of the substrate 2 between the heat-radiation sheets 50 adjacent to each other, it is possible to suppress a warp and deformation of the substrate 2 caused by heat.
  • the first conductor pattern 10 and second conductor pattern 11 are formed on the first surface 5 a of the substrate 2 . More specifically, the copper foil deposited on the first surface 5 a is etched, whereby copper layers 28 of the first and second conductor patterns 10 and 11 are formed. In, the copper layer 28 of the first conductor pattern 10 , parts constituting the pads 12 are electrically connected to each other through the copper layer 28 of the second conductor pattern 11 . Therefore, all the parts of the copper layer 28 of the first conductor pattern 10 each constituting the pads 12 are maintained at the same potential.
  • the copper layer 28 of the first conductor pattern 10 is subjected to electrolytic plating, whereby a nickel-plated layer 29 is formed on the copper layer 28 .
  • the nickel-plated layer 29 is subjected to electrolytic plating, whereby a silver-plated layer 30 is formed on the nickel-plated layer 29 .
  • all the parts in the copper layer 28 of the first conductor pattern 10 each constituting the pads 12 are maintained at the same potential.
  • the nickel-plated layer 29 and silver-plated layer 30 are formed on the copper layer 28 of the first conductor pattern 10 by using the copper layer 28 of the first conductor pattern 10 as a negative electrode, using a metal identical with the metal of the layer to be formed by plating as a positive electrode, and causing an electric current to flow between both the electrodes.
  • the nickel-plated layer 29 and silver-plated layer 30 are also formed on the copper layer 28 of the second conductor pattern 11 simultaneously with the first conductor pattern 10 . This state is shown in FIG. 2 .
  • the common line 32 of the second conductor pattern 11 is removed from the first surface 5 a of the substrate 2 . More specifically, the common line 32 on the first surface 5 a is scraped away. As a result, electrical connection between the pads 12 of the first conductor pattern 10 and second conductor pattern 11 is severed, and the pads 12 are maintained in a state where the pads 12 are electrically independent.
  • a groove-like depressed part 45 is formed in the first surface 5 a .
  • the depressed part 45 has the curved parts 46 which are curved to detour around the piercing parts 6 , at positions corresponding to the piercing parts 6 of the substrate 2 .
  • the depressed part 45 intersects the bases of the branch lines 33 branching off from the common line 32 .
  • the branch lines 33 are left on the first surface 5 a of the substrate 2 in a state where the branch lines 33 are electrically separated from each other.
  • each of the first and second mounting areas 16 a and 16 b of each pad 12 six light-emitting elements 3 are affixed to each of the first and second mounting areas 16 a and 16 b of each pad 12 .
  • the positive electrodes of the light-emitting elements 3 are electrically connected to the pads 12 to which the light-emitting elements 3 are affixed by bonding wires 38 .
  • the negative electrodes of the light-emitting elements 3 are connected to the power supply terminals 20 of the adjacent pads 12 , and power supply terminals 25 of the power supply patterns 24 a and 24 b by bonding wires 39 .
  • a pattern of the resist layer 48 is formed on the conductor patterns 10 and 11 .
  • the pattern of the resist layer 48 is formed on the substrate surface except the mounting areas of the light-emitting elements 3 , and mounting positions of the other electronic components.
  • the resist layer 48 is formed by using a white photoresist material. Accordingly, the resist layer 48 is irradiated with ultraviolet rays to carry out exposure and development, whereby the pattern of the area S is formed.
  • the ultraviolet rays when the ultraviolet rays are applied to the resist layer 48 , part of the irradiation light passes through the resist layer 48 at the boundary part between the resist layer 48 and areas S, and is reflected from the surface of the pad 12 .
  • the irradiation direction of the ultraviolet light is inclined, whereby the light reflected from the pad 12 is directed laterally or obliquely upward, and the resist layer 48 is exposed in a concave form in the thickness dimension range of the resist layer 48 .
  • the engagement protrusion part 48 a having the above-mentioned cross-sectional shape is formed at the boundary part of the resist layer 48 .
  • the engagement protrusion part 48 a is formed by exposure in the manner described above, by adjusting the irradiation intensity, irradiation angle, irradiation time, and the like of the ultraviolet rays, it is possible to make the shape of the engagement protrusion part 48 a a desired shape.
  • the process of forming the pattern of the resist layer 48 can also be carried out before the removal process of the above-mentioned second conductor pattern 11 .
  • the resist layer 48 is formed after the second conductor pattern 11 is removed, and hence the depressed part 45 appearing after the second conductor pattern 11 is scraped away is filled with the resist layer 48 as shown in FIG. 1 and FIG. 5 .
  • the depressed part 45 is exposed on the surface of the light-emitting device 1 .
  • the light-emitting elements 3 arranged in two lines and the bonding wires 38 and 39 are sealed on the pads 12 by using the sealing members 4 a and 4 b .
  • the light-emitting device 1 as shown in FIG. 1 and FIG. 5 is formed.
  • each of the sealing members 4 a and 4 b flows into a part under the engagement protrusion part 48 a at the edge part of the area S in contact with the resist layer 48 .
  • the sealing members 4 a and 4 b are heated to be cured, or after the sealing members 4 a and 4 b are left as they are for a predetermined time, the sealing members 4 a and 4 b are cured and fixed to the areas S of the resist layer 48 .
  • each of the engagement protrusion parts 48 a is brought into a state where the part 48 a is inserted into the cured sealing member 4 a or 4 b , and hence, for example, even when lateral force is applied to the sealing member 4 a or 4 b , the sealing member 4 a or 4 b is not easily exfoliated.
  • the edge of the area S is obliquely inclined, and hence the area in which the sealing member 4 a or 4 b is in contact with the resist layer 48 becomes larger correspondingly.
  • the adhesive strength of the sealing members 4 a and 4 b is enhanced with respect to the resist layer 48 .
  • the illumination device 100 in which the above-mentioned light-emitting device 1 is incorporated will be described below with reference to FIG. 7 .
  • the illumination device 100 to be described is, for example, an illumination device of the ceiling mounting type which is mounted on the ceiling of a room to be used.
  • the illumination device 100 is provided with a main body case 101 having substantially a long and thin parallelepiped-shape.
  • a main body case 101 having substantially a long and thin parallelepiped-shape.
  • a plurality of (two in this embodiment) light-emitting devices 1 described above are connected and arranged side by side in the longitudinal direction.
  • a power supply unit (not shown) provided with a power supply circuit (not shown) is incorporated in the main body case 101 .
  • a front cover 102 having light-diffusing properties is attached to a lower opening part of the main body case 101 .
  • a plurality of light-emitting elements 3 are turned on all at once, and light is emitted from each of the plurality of light-emitting elements 3 .
  • the light emitted from each of the plurality of light-emitting elements 3 passes through a sealing member 4 a or 4 b , and is utilized as white illumination light. That is, the illumination device 100 is used as a surface light source.
  • the pads 12 function as a heat spreader configured to spread heat generated from the light-emitting elements 3 . Furthermore, while the light-emitting devices 1 are emitting light, part of the light emitted from the light-emitting elements 3 , the part of the light being directed toward the substrate 2 side, is reflected from the reflecting layer on the surface side of the pads 12 mostly in the light-utilization direction. Accordingly, it is possible to make the light-extraction efficiency excellent.
  • the second conductor pattern 11 which maintains the pads 12 of the first conductor pattern 10 at the same potential is constituted of the common line 32 and the branch lines 33 that are branched off from the common line 32 and reach the pads 12 . Therefore, electrical connection between the pads 12 obtained by the second conductor pattern 11 can be severed by removing the common line 32 from the substrate 2 .
  • the depressed part 45 which is left after the common line 32 is scraped away is separate from the end edge of the substrate 2 by the predetermined distance, and, is positioned between, the end edge of the substrate 2 and pads 12 .
  • the creepage distance between the end edge of the substrate 2 and pads 12 becomes longer than the clearance (spatial distance) between the end edge of the substrate 2 and pads 12 by a length corresponding to the depth of the depressed part 45 , and it is possible to secure an insulation distance from the end edge of the substrate 2 to the pads 12 .
  • the depressed part 45 has the curved parts 46 which are curved to detour around the piercing parts 6 at positions corresponding to the piercing parts 6 of the substrate 2 . Therefore, it is possible to equally secure insulating distances from the edges of the piercing parts 6 to the curved parts 46 , and improve the dielectric strength of the substrate 2 . Thus, even when the screws 8 to be inserted through the piercing parts 6 are formed of metal, insulation between the screws 8 and pads 12 can be sufficiently secured, and the reliability of electrical insulation of the light-emitting device 1 can be improved.
  • the sealing members 4 a and 4 b are cured in a state where the engagement protrusion part 48 a is accepted into each of the sealing members 4 a and 4 b , and hence it is possible to prevent the fault of exfoliation of the sealing members 4 a and 4 b from the surface of the substrate 2 from occurring.
  • the engagement protrusion parts 48 a to be buried in the sealing members 4 a and 4 b , it is possible to enhance the adhesive strength of the sealing members 4 a and 4 b with respect to the resist layer 48 .
  • the surface of the resist layer 48 is formed at a position lower than the height of the top surface of the light-emitting element 3 , and hence it is possible to reduce the degree to which the resist layer 48 is a hindrance to the light emitted from the light-emitting elements 3 , and enhance the luminous efficacy.
  • the light-emitting device 60 of this embodiment has substantially the same structure as the light-emitting device 1 of the first embodiment described above except for that sealing members 4 c configured to individually cover and seal light-emitting elements 3 are provided in place of the sealing members 4 a and 4 b . Accordingly, parts identical with or corresponding to those of the first embodiment are denoted by the identical reference symbols, and a duplicated description will be omitted.
  • a resist layer 48 of this embodiment includes a plurality of substantially circular areas S (not shown) in which a plurality of light-emitting elements 3 are individually exposed.
  • the plurality of areas S are patterned in the resist layer 48 as in the case of the first embodiment described above. That is, an area S which is a size smaller than each of a plurality of sealing members 4 c provided to correspond to the light-emitting elements 3 is formed around each of the light-emitting element 3 .
  • an engagement protrusion part 48 a a cross section of which is as shown in FIG. 5 is provided in a protruding manner.
  • a plurality of sealing members 4 c are provided to cover the plurality of areas S of the resist layer 48 , whereby each sealing member 4 c is fastened to the resist layer 48 , and the sealing members 4 c are not easily exfoliated from the resist layer 48 .
  • a plurality of areas S in the resist layer 48 as in this embodiment, it is possible to provide more (longer) engagement protrusion parts 48 a , and further enhance the adhesive strength of the sealing members 4 c .
  • the plurality of small sealing members 4 c are used, and hence it is possible, as compared with the first embodiment, to reduce the amount of the sealing members, reduce the material cost, reduce the degree to which the resist layer 48 is a hindrance to the light emitted from the light-emitting elements 3 , and make the luminous efficacy excellent.
  • FIG. 9 shows a cross-sectional view obtained by partially enlarging an important part of the light-emitting device 70 .
  • FIG. 10 shows a cross-sectional view obtained by enlarging an area R of FIG. 9 .
  • the light-emitting device 70 of this embodiment has a structure identical with the first embodiment or the second embodiment described above except for the structure shown in FIG. 9 . Accordingly, here, the configurations identical with the above-mentioned embodiments are denoted by identical reference symbols, and a detailed description of them will be omitted.
  • bonding wires 38 and 39 configured to electrically connect a light-emitting element are respectively connected to electrode pads 71 and 72 that are electrically independent of a pad 12 to which the light-emitting element 3 is attached.
  • an engagement protrusion part 74 of a resist layer 48 is provided at each of edge parts of the resist layer 48 on the separate side of each of the electrode pads 71 and 72 from the light-emitting element 3 .
  • the engagement protrusion part 74 of this embodiment has a cross-sectional shape gently curved in the thickness direction of the resist layer 48 to connect a top surface of the resist layer 48 and a surface of the electrode pad 71 ( 72 ) to each other as shown in FIG. 10 .
  • the cross-sectional shape of the engagement protrusion part 74 can be arbitrarily set by adjusting the irradiation intensity, irradiation angle, irradiation time, and the like of the ultraviolet rays.
  • the adhesive strength of the sealing member 4 stronger with respect to the engagement protrusion part 74 of the resist layer 48 .
  • FIG. 11 shows a modification example of the engagement protrusion part 74 of FIG. 10 .
  • An engagement protrusion part 76 according to this modification example has a cross-sectional, shape in which a part of the resist layer 48 on the top surface side thereof separate from the surface of the electrode pad 71 ( 72 ) is sharp, and which is curved leftwardly in FIG. 11 from the sharp distal end toward the electrode pad 71 ( 72 ) to scoop out the edge of the resist layer 48 .
  • the engagement protrusion part 76 according to this modification example also functions in the same manner as the engagement protrusion part of each of the first to third embodiments, and can prevent exfoliation of the sealing member 4 .
  • the area in which the resist layer 48 is in contact with the sealing member 4 is larger than the first and second embodiments, and hence the adhesive strength can be made high.
  • the material of the resist layer is not limited to this material. Any material may be used if the above-mentioned engagement protrusion part configured to prevent exfoliation of the sealing member can be formed or, alternatively, other means for constituting the engagement protrusion part may be applied.
  • the pad used to attach the light-emitting element is used as a wiring pattern, it is not always necessary to use the pad as a wiring pattern. For example, there are cases where it is sufficient if the pad has a function of serving as a heat spreader configured to conduct and spread heat generated from the light-emitting element 3 or has a function of reflecting light.
  • the light-emitting element may also be configured to directly emit red light, green light or blue light without using, for example, a fluorescent substance in the sealing member.
  • the illumination device can be applied to a lighting fixture to be used indoors or outdoors, light source of a display device, and the like.

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150173132A1 (en) * 2013-12-13 2015-06-18 Epistar Corporation Light-emitting device and the method of manufacturing the same
US9236551B2 (en) 2012-12-04 2016-01-12 Toshiba Lighting & Technology Corporation Light emitting device and luminaire

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120268698A1 (en) * 2011-04-21 2012-10-25 E Ink Holdings Inc. Color filter substrate and display device
TWI572054B (zh) 2012-03-16 2017-02-21 晶元光電股份有限公司 高亮度發光二極體結構與其製造方法
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JP2014146661A (ja) * 2013-01-28 2014-08-14 Panasonic Corp 発光モジュール、照明装置および照明器具
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TWI837555B (zh) * 2020-12-24 2024-04-01 南韓商東友精細化工有限公司 電路板

Citations (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1154769A (ja) 1997-07-30 1999-02-26 Toshiba Corp 光実装部品およびその製造方法
CN1466782A (zh) 2001-08-28 2004-01-07 ���µ繤��ʽ���� 使用led的发光装置
US20040211970A1 (en) * 2003-04-24 2004-10-28 Yoshiaki Hayashimoto Semiconductor light emitting device with reflectors having cooling function
US20050285926A1 (en) 2004-06-29 2005-12-29 Fuji Photo Film Co., Ltd. Light source assembly, method of producing light source assembly, and color thermal printer
US7021799B2 (en) 2003-08-01 2006-04-04 Fuji Photo Film Co., Ltd. Light source unit
CN1846318A (zh) 2003-09-29 2006-10-11 松下电器产业株式会社 线光源装置、其制造方法以及表面发光装置
JP2006351708A (ja) 2005-06-14 2006-12-28 Toyoda Gosei Co Ltd 発光ダイオードランプ及び光源装置
US20070176198A1 (en) 2006-02-02 2007-08-02 Samsung Electro-Mechanics Co., Ltd. Chip on board package and manufacturing method thereof
US20070290328A1 (en) 2006-06-16 2007-12-20 Gigno Technology Co., Ltd. Light emitting diode module
JP2008047604A (ja) 2006-08-11 2008-02-28 Tokuyama Corp メタライズ基板、半導体装置
US20080068862A1 (en) 2006-04-17 2008-03-20 Citizen Electronics Co., Ltd. Light guide plate, method of manufacturing light guide plate and backlight with the light guide plate
JP2008085302A (ja) 2006-08-29 2008-04-10 Toshiba Lighting & Technology Corp 照明装置
US20080117619A1 (en) 2006-11-21 2008-05-22 Siew It Pang Light source utilizing a flexible circuit carrier and flexible reflectors
CN101213892A (zh) 2006-03-03 2008-07-02 Lg伊诺特有限公司 发光二极管封装件及其制造方法
JP2008166611A (ja) 2006-12-28 2008-07-17 Kyocera Corp 発光素子アレイ、それを用いた光プリントヘッドおよび画像形成装置
JP2008166081A (ja) 2006-12-27 2008-07-17 Toshiba Lighting & Technology Corp 照明装置及びこの照明装置を備えた照明器具
JP2008166462A (ja) 2006-12-28 2008-07-17 Nichia Chem Ind Ltd 発光装置
JP2008198782A (ja) 2007-02-13 2008-08-28 Toyoda Gosei Co Ltd 発光装置
JP2008258296A (ja) 2007-04-03 2008-10-23 Sony Corp 発光装置及び光源装置
US20080273327A1 (en) 2007-05-04 2008-11-06 Ruud Lighting, Inc. Safety Accommodation Arrangement in LED Package/Secondary Lens Structure
JP2009040884A (ja) 2007-08-09 2009-02-26 Hitachi Ltd 光反射部形成用樹脂組成物、その組成物の皮膜を有する配線基板とその製造方法、光半導体パッケージ、および照明装置
JP2009054989A (ja) 2007-07-31 2009-03-12 Sharp Corp 発光装置、照明装置及び当該照明装置を備えたクリーンルーム
US20090103325A1 (en) 2004-12-30 2009-04-23 Eden Dubuc Traffic signal having a uniform light surface
CN101445644A (zh) 2007-11-30 2009-06-03 太阳油墨制造株式会社 白色固化性树脂组合物
WO2009090867A1 (ja) 2008-01-15 2009-07-23 Sekisui Chemical Co., Ltd. レジスト材料及び積層体
CN201302063Y (zh) 2008-12-05 2009-09-02 上海芯光科技有限公司 无缝拼接式半导体平面光源模块
US7736920B1 (en) * 2009-06-26 2010-06-15 Paragon Semiconductor Lighting Technology Co., Ltd. Led package structure with standby bonding pads for increasing wire-bonding yield and method for manufacturing the same
US20100277914A1 (en) 2009-05-01 2010-11-04 Bernhard Bachl Lighting Apparatus with Several Light Units Arranged in a Heatsink

Patent Citations (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1154769A (ja) 1997-07-30 1999-02-26 Toshiba Corp 光実装部品およびその製造方法
CN1466782A (zh) 2001-08-28 2004-01-07 ���µ繤��ʽ���� 使用led的发光装置
US20040211970A1 (en) * 2003-04-24 2004-10-28 Yoshiaki Hayashimoto Semiconductor light emitting device with reflectors having cooling function
US7021799B2 (en) 2003-08-01 2006-04-04 Fuji Photo Film Co., Ltd. Light source unit
CN1846318A (zh) 2003-09-29 2006-10-11 松下电器产业株式会社 线光源装置、其制造方法以及表面发光装置
US20050285926A1 (en) 2004-06-29 2005-12-29 Fuji Photo Film Co., Ltd. Light source assembly, method of producing light source assembly, and color thermal printer
US20090103325A1 (en) 2004-12-30 2009-04-23 Eden Dubuc Traffic signal having a uniform light surface
JP2006351708A (ja) 2005-06-14 2006-12-28 Toyoda Gosei Co Ltd 発光ダイオードランプ及び光源装置
US20070176198A1 (en) 2006-02-02 2007-08-02 Samsung Electro-Mechanics Co., Ltd. Chip on board package and manufacturing method thereof
CN101213892A (zh) 2006-03-03 2008-07-02 Lg伊诺特有限公司 发光二极管封装件及其制造方法
US20080068862A1 (en) 2006-04-17 2008-03-20 Citizen Electronics Co., Ltd. Light guide plate, method of manufacturing light guide plate and backlight with the light guide plate
US20070290328A1 (en) 2006-06-16 2007-12-20 Gigno Technology Co., Ltd. Light emitting diode module
JP2008047604A (ja) 2006-08-11 2008-02-28 Tokuyama Corp メタライズ基板、半導体装置
JP2008085302A (ja) 2006-08-29 2008-04-10 Toshiba Lighting & Technology Corp 照明装置
US20080117619A1 (en) 2006-11-21 2008-05-22 Siew It Pang Light source utilizing a flexible circuit carrier and flexible reflectors
JP2008166081A (ja) 2006-12-27 2008-07-17 Toshiba Lighting & Technology Corp 照明装置及びこの照明装置を備えた照明器具
JP2008166611A (ja) 2006-12-28 2008-07-17 Kyocera Corp 発光素子アレイ、それを用いた光プリントヘッドおよび画像形成装置
JP2008166462A (ja) 2006-12-28 2008-07-17 Nichia Chem Ind Ltd 発光装置
JP2008198782A (ja) 2007-02-13 2008-08-28 Toyoda Gosei Co Ltd 発光装置
JP2008258296A (ja) 2007-04-03 2008-10-23 Sony Corp 発光装置及び光源装置
US20080273327A1 (en) 2007-05-04 2008-11-06 Ruud Lighting, Inc. Safety Accommodation Arrangement in LED Package/Secondary Lens Structure
JP2009054989A (ja) 2007-07-31 2009-03-12 Sharp Corp 発光装置、照明装置及び当該照明装置を備えたクリーンルーム
JP2009040884A (ja) 2007-08-09 2009-02-26 Hitachi Ltd 光反射部形成用樹脂組成物、その組成物の皮膜を有する配線基板とその製造方法、光半導体パッケージ、および照明装置
CN101445644A (zh) 2007-11-30 2009-06-03 太阳油墨制造株式会社 白色固化性树脂组合物
WO2009090867A1 (ja) 2008-01-15 2009-07-23 Sekisui Chemical Co., Ltd. レジスト材料及び積層体
CN201302063Y (zh) 2008-12-05 2009-09-02 上海芯光科技有限公司 无缝拼接式半导体平面光源模块
US20100277914A1 (en) 2009-05-01 2010-11-04 Bernhard Bachl Lighting Apparatus with Several Light Units Arranged in a Heatsink
US7736920B1 (en) * 2009-06-26 2010-06-15 Paragon Semiconductor Lighting Technology Co., Ltd. Led package structure with standby bonding pads for increasing wire-bonding yield and method for manufacturing the same

Non-Patent Citations (42)

* Cited by examiner, † Cited by third party
Title
Chinese Office Action issued in CN 201110037796.4 issued on Oct. 12, 2013.
Chinese Office Action issued in CN 201110037796.4 on Feb. 4, 2013.
Chinese Office Action issued in CN 201110037800.7 mailed Oct. 8, 2012.
English Abastract of JP 2008-166081 published Jul. 17, 2008.
English Abstract of JP 2008-085302 published Apr. 10, 2008.
English Abstract of JP 2009-054989 published Mar. 12, 2009.
English Language Abstract and Translation for JP 2008-166462 published on Jul. 17, 2008.
English Language Abstract of CN 101213892 published Jul. 2, 2008.
English Language Abstract of CN 101445644 published Jun. 3, 2009.
English Language Abstract of CN 1466782 published Jan. 7, 2004.
English Language Abstract of CN 1846318 published Oct. 11, 2006.
English Language Abstract of CN 1846318 published Sep. 2, 2009.
English Language Abstract of JP 11-054769 published Feb. 26, 1999.
English Language Abstract of JP 2006-351708 published Dec. 28, 2006.
English Language Abstract of JP 2008-047604 published Feb. 28, 2008.
English Language Abstract of JP 2008-166462 published Jul. 17, 2008.
English Language Abstract of JP 2008-166611 published Jul. 17, 2008.
English Language Abstract of JP 2008-198782 published Aug. 28, 2008.
English Language Abstract of JP 2008-258296 published Oct. 23, 2008.
English Language Abstract of JP 2009-040884 published Feb. 26, 2009.
English Language Abstract of WO2009-090867 published May 26, 2011.
English Language Translation for Chinese Office Action issued in CN 201110037796.4 issued on Oct. 12, 2013.
English Language Translation of Chinese Office Action issued in CN 201110037796.4 on Feb. 4, 2013.
English Language Translation of Chinese Office Action issued in CN 201110037800.7 mailed Oct. 8, 2012.
English Language Translation of Japanese Office Action issued in JP 2010-029542 on Jun. 25, 2013.
English Language Translation of JP 11-054769 published Feb. 26, 1999.
English Language Translation of JP 2006-351708 published Dec. 28, 2006.
English Language Translation of JP 2008-047604 published Feb. 28, 2008.
English Language Translation of JP 2008-166462 published Jul. 17, 2008.
English Language Translation of JP 2008-166611 published Jul. 17, 2008.
English Language Translation of JP 2008-198782 published Aug. 28, 2008.
English Language Translation of JP 2008-258296 published Oct. 23, 2008.
English Language Translation of JP 2009-040884 published Feb. 26, 2009.
English Translation of JP 2008-085302 published Apr. 10, 2008.
English Translation of JP 2008-166081 published Jul. 17, 2008.
English Translation of JP 2009-054989 published Mar. 12, 2009.
Extended Search Report for EP 11154159.5 issued on Aug. 21, 2013.
Japanese Office Action issued in JP 2010-029542 on Jun. 25, 2013.
Related U.S. Appl. No. 13/024,384 electronically captured on Jan. 8, 2013.
Related U.S. Appl. No. 13/024,384 electronically captured on May 3, 2013.
U.S. Appl. No. 13/024,384 electronically captured on Aug. 22, 2013 between May 22, 2013 and Aug. 22, 2013.
U.S. Appl. No. 13/024,384 electronically captured on Sep. 24, 2013 between Aug. 22, 2013 and Sep. 24, 2013.

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9236551B2 (en) 2012-12-04 2016-01-12 Toshiba Lighting & Technology Corporation Light emitting device and luminaire
US20150173132A1 (en) * 2013-12-13 2015-06-18 Epistar Corporation Light-emitting device and the method of manufacturing the same
US9917075B2 (en) * 2013-12-13 2018-03-13 Epistar Corporation Light-emitting device and the method of manufacturing the same
US10756067B2 (en) 2013-12-13 2020-08-25 Epistar Corporation Light-emitting device and the method of manufacturing the same
US11107797B2 (en) 2013-12-13 2021-08-31 Epistar Corporation Light-emitting device and the method of manufacturing the same

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US20110199772A1 (en) 2011-08-18
EP2360417A2 (de) 2011-08-24

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