US8383517B2 - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

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US8383517B2
US8383517B2 US12/023,491 US2349108A US8383517B2 US 8383517 B2 US8383517 B2 US 8383517B2 US 2349108 A US2349108 A US 2349108A US 8383517 B2 US8383517 B2 US 8383517B2
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deposit
dry etching
base material
substrate
silicon
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US20080182421A1 (en
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Eiichi Nishimura
Chie Kato
Akitaka Shimizu
Hiroyuki Takahashi
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TAKAHASHI, HIROYUKI, KATO, CHIE, NISHIMURA, EIICHI, SHIMIZU, AKITAKA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture

Definitions

  • the present invention relates to a substrate processing method and a substrate processing apparatus, and in particular to a method of processing a substrate having a hard mask comprised of a silicon oxide film and/or a silicon nitride film.
  • a wafer W As a substrate that has the silicon base material 40 and a silicon nitride (SiN) film 41 formed on the silicon base material 40 , the wafer W is subjected to dry etching using plasma 44 of halogenated gas such as hydrogen bromide (HBr).
  • halogenated gas such as hydrogen bromide (HBr).
  • a hard mask 42 that is a film made of BSG (boron silicate glass) formed on the silicon nitride film 41 is used.
  • the hard mask 42 has an opening 43 to which the silicon base material 40 is partially exposed.
  • the plasma 44 enters the opening 43 and contacts the silicon base material 40 to physically or chemically etch the silicon base material 40 ( FIG. 4A ).
  • a trench 45 corresponding to the opening 43 is formed in the silicon base material 40 ( FIG. 4B ).
  • SiOBr produced through reaction of silicon and plasma of hydrogen bromide accumulates on a side face of the opening 43 and a side face of the trench 45 to form an SiOBr deposit portion 46 .
  • the amount of SiOBr accumulated on the side face of the opening 43 is large, and hence the SiOBr deposit portion 46 blocks most of the opening 43 and inhibits the entry of the plasma 44 into the trench 45 .
  • the etching of the silicon base material 40 stops, making it impossible to further deepen the trench 45 .
  • the present invention provides a substrate processing method and a substrate processing apparatus that can selectively remove deposit produced through dry etching of silicon.
  • a method of processing a substrate having a silicon base material and a hard mask made of a silicon nitride film and/or a silicon oxide film and formed on the silicon base material, the hard mask having an opening to which the silicon base material is at least partially exposed comprising a dry etching step of forming a concave portion corresponding to the opening in the silicon base material using plasma produced from halogenated gas, a heating step of heating the substrate to a temperature of not less than 200° C., and a gas supplying step of supplying hydrogen fluoride gas toward the substrate.
  • the substrate in which the concave portion corresponding to the opening has been formed in the silicon base material through the dry etching using the plasma produced from hydrogen bromide is heated to a temperature of not less than 200° C., and the hydrogen bromide gas is supplied toward the substrate.
  • the hydrogen fluoride gas removes deposit produced through the dry etching of silicon, but does not remove the hard mask made of the silicon oxide film and/or the silicon nitride film.
  • the deposit produced through the dry etching of silicon can be selectively removed.
  • the first aspect of the present invention can provide a method of processing a substrate, wherein the dry etching step is carried out again after the gas supplying step.
  • the dry etching step is carried out again after the gas supplying step. Specifically, because the substrate is subjected to the dry etching after the deposit that blocks most of the opening corresponding to the trench is removed in the gas supplying step, the silicon base material can be etched again, and hence a deep trench (DT) can be formed in the silicon base material.
  • DT deep trench
  • the first aspect of the present invention can provide a method of processing a substrate comprising an oxygen radical supplying step of supplying oxygen radicals toward the substrate before the dry etching step is carried out again after the gas supplying step.
  • the oxygen radicals are supplied toward the substrate before the dry etching is carried out again after the gas supplying step.
  • the silicon base material becomes exposed on the side face of the trench.
  • the oxygen radicals react with the exposed silicon base material to form an oxide film on the side face of the trench.
  • the oxide film protects the side face of the trench from the plasma used in the dry etching that is carried out again. As a result, the trench can be prevented from becoming deformed.
  • the first aspect of the present invention can provide a method of processing a substrate, wherein a flow rate of the hydrogen fluoride gas supplied in the gas supplying step is 2000 sccm to 3000 sccm.
  • the flow rate of the hydrogen fluoride gas supplied in the gas supplying step is 2000 sccm to 3000 sccm, a sufficient amount of hydrogen fluoride gas can be supplied toward the substrate, and hence the deposit can be reliably removed.
  • the first aspect of the present invention can provide a method of processing a substrate, wherein a length of time that the hydrogen fluoride gas is supplied in the gas supplying step is not more than 30 seconds.
  • the length of time that the hydrogen fluoride gas is supplied in the gas supplying step is not more than 30 seconds.
  • the absolute amount of deposit produced in the dry etching of silicon is relatively small, and hence the deposit can be removed through etching using the hydrogen fluoride gas in a short time. Therefore, even if the length of time that the hydrogen fluoride gas is supplied is not more than 30 seconds, the deposit can be reliably removed.
  • the first aspect of the present invention can provide a method of processing a substrate, wherein deposit to be removed in the gas supplying step is deposit that is produced in the dry etching step and accumulates on a side face of the opening.
  • the deposit to be removed in the gas supplying step is deposit that is produced through the dry etching and accumulates on the side face of the opening of the hard mask, the path over which the plasma passes through the opening of the hard mask and enters the trench can be secured, and hence the deep trench can be reliably formed in the silicon base material.
  • a substrate processing apparatus that processes a substrate having a silicon base material and a hard mask made of a silicon nitride film and/or a silicon oxide film and formed on the silicon base material, the hard mask having an opening to which the silicon base material is at least partially exposed, and in which a concave portion corresponding to the opening is formed in the silicon base material through dry etching using plasma produced from halogenated gas, comprising a heating unit adapted to heat the substrate to a temperature of not less than 200° C., and a gas supplying unit adapted to supply hydrogen fluoride gas toward the substrate.
  • FIG. 1 is a sectional view schematically showing the construction of a substrate processing apparatus according to an embodiment of the present invention
  • FIG. 2 is a flow chart of DT (deep trench) etching as a substrate processing method according to the present embodiment
  • FIGS. 3A to 3E are process drawings showing a process of the DT etching.
  • FIGS. 4A and 4B are process drawings showing a conventional process of forming a trench in a silicon base material of a semiconductor wafer.
  • FIG. 1 is a sectional view schematically showing the construction of the substrate processing apparatus according to the present embodiment.
  • the substrate processing apparatus 10 has a wafer housing chamber (hereinafter referred to merely as the “chamber”) 11 in which a wafer W (substrate) in FIG. 4A is housed, a mounting stage 12 that is disposed in the chamber 11 and on which the wafer W is mounted, a shower head 13 (gas supplying unit) that is disposed in an upper portion of the chamber 11 such as to face the mounting stage 12 , a TMP (turbo-molecular pump) 14 that exhausts gas and the like out of the chamber 11 , and an APC (adaptive pressure control) valve 15 that is disposed between the chamber 11 and the TMP 14 as a variable butterfly valve for controlling the pressure in the chamber 11 .
  • a wafer housing chamber hereinafter referred to merely as the “chamber”
  • a wafer W substrate in FIG. 4A
  • a mounting stage 12 that is disposed in the chamber 11 and on which the wafer W is mounted
  • a shower head 13 gas supplying unit
  • TMP turbo-mole
  • the chamber 11 is a housing chamber having a side wall, a ceiling portion, and a bottom portion made of aluminum or the like.
  • a transfer port 16 for transferring the wafers W is provided in the side wall of the chamber 11 .
  • the transfer port 16 is opened and closed by a sliding gate 17 .
  • the mounting stage 12 is comprised of a cylindrical aluminum member, and the diameter thereof is set to be larger than that of the wafer W.
  • the mounting stage 12 has a heater (heating unit) 18 therein.
  • the heater 18 is disposed parallel to the mounting surface of the mounting stage 12 .
  • the heater 18 generates heat, the whole wafer W is uniformly heated because the entire rear surface of the wafer W contacts the mounting surface. It should be noted that the heater 18 is able to heat the mounted wafer W to a temperature of not less than 200° C.
  • the shower head 13 is comprised of a disk-shaped aluminum member and has a buffer chamber 19 therein.
  • the buffer chamber 19 communicates with the interior of the chamber 11 via a plurality of gas vent holes 20 .
  • the buffer chamber 19 of the shower head 13 is connected to a hydrogen fluoride (HF) gas supply system (not shown) and a helium (He) gas supply system (not shown).
  • the hydrogen fluoride gas supply system supplies hydrogen fluoride gas into the buffer chamber 19
  • the helium gas supply system supplies helium gas into the buffer chamber 19 .
  • the supplied hydrogen fluoride gas and helium gas are supplied into the chamber 11 and further toward the wafer W via the gas vent holes 20 .
  • the side wall of the chamber 11 also has a heater (not shown), for example a heating element, incorporated therein.
  • the heating element inside the side wall of the chamber 11 prevents SiF 4 (silicon tetrafluoride) or the like, described later, subliming from the wafer W from becoming attached to an inner side of the side wall.
  • the present inventors conducted various experiments on the wafer W in FIG. 4B so as to find a method of selectively removing only the SiOBr deposit portion 46 without carrying out wet etching using hydrofluoric acid, and found that etching of the hard mask 42 made of BSG and the silicon nitride film 41 using hydrogen fluoride gas is clearly temperature-dependent.
  • the present inventors found that in etching of the hard mask 42 and the silicon nitride film 41 using hydrogen fluoride gas, if the temperature of the wafer W is changed to 200° C. or higher, the etch rate for the hard mask 42 and the silicon nitride film 41 becomes zero. The present inventors also found that even when the temperature of the wafer W is not less than 200° C., the etch rate for the SiOBr deposit portion 46 does not become zero, and the SiOBr deposition portion 46 is etched by hydrogen fluoride gas.
  • the flow rate of hydrogen fluoride gas supplied from the shower head 13 toward the wafer W was 2000 sccm to 3000 sccm
  • the flow rate of helium gas supplied from the shower head 13 toward the wafer W was 100 sccm to 1000 sccm
  • the pressure in the chamber 11 was set to 6.67 ⁇ 10 2 Pa (5 Torr) to 2.67 ⁇ 10 3 Pa (20 Torr).
  • the present invention has been developed based on these findings.
  • the hard mask 42 , the silicon nitride film 41 , and the SiOBr deposit portion 46 contain water molecules. Hydrogen fluoride gas that has reached the hard mask 42 and the SiOBr deposit portion 46 combines with the contained water molecules to make hydrofluoric acid.
  • the hard mask 42 is composed mainly of a silicon oxide, and SiOBr is a pseudo-silicon oxide.
  • the hydrofluoric acid chemically reacts with these silicon oxides as expressed by the following equation (1): SiO 2 +4HF ⁇ SiF 4 +2H 2 O ⁇ (1)
  • SiF 4 produced through the chemical reaction expressed by the above equation (1) chemically reacts with the hydrofluoric acid as expressed by the following equation (2) to make residue (H 2 SiF 6 ): SiF 4 +2HF ⁇ H 2 SiF 6 (2)
  • the residue causes a conduction error and the like of a semiconductor device and hence has to be removed from the wafer W.
  • the residue is thermally decomposed through thermal energy as expressed by the following equation (3): H 2 SiF 6 +Q(thermal energy) ⁇ 2HF ⁇ +SiF 4 ⁇ (3)
  • hydrogen fluoride gas that has reached the silicon nitride film 41 combines with the contained water molecules to make hydrofluoric acid.
  • the hydrofluoric acid then chemically reacts with the silicon nitride film 41 as expressed by the following equation (4): 2 SiN+8HF ⁇ 2SiF 4 +4H 2 ⁇ +N 2 ⁇ (4)
  • the SiF 4 produced through the chemical reaction expressed by the above equation (4) is also decomposed through the chemical reaction expressed by the above equations (2) and (3).
  • the silicon nitride film 41 , the hard mask 42 , and the SiOBr deposit portion 46 are etched by the hydrogen fluoride gas.
  • the hard mask 42 and the silicon nitride film 41 are formed through film formation processing such as CVD (chemical vapor deposition) processing, while the SiOBr deposit portion 46 is formed through accumulation of SiOBr.
  • the structure of the SiOBr deposit portion 46 is much looser as compared with the film structures of the hard mask 42 and the silicon nitride film 41 and hence contains a large amount of water molecules.
  • the SiOBr deposit portion 46 contains a large amount of water molecules, even if the wafer W is heated to a temperature of not less than 200° C., water molecules remain in the SiOBr deposit portion 46 , and the remaining water molecules combine with the hydrogen fluoride gas to make hydrofluoric acid. As a result, the SiOBr deposit portion 46 is etched by the hydrofluoric acid.
  • FIG. 2 is a flow chart of DT (deep trench) etching as the substrate processing method according to the present embodiment.
  • the wafer W in FIG. 4A is subjected to dry etching by plasma 44 produced from hydrogen bromide gas, so that the silicon base material 40 is etched (step S 21 ) (dry etching step) ( FIG. 3A ).
  • a trench 45 (concave portion) corresponding to the opening 43 is formed in the silicon base material 40 , but silicon of the silicon base material 40 and the plasma 44 react with each other to produce SiOBr, which then accumulates on a side face of the opening 43 and a side face of the trench 45 to form an SiOBr deposit portion 46 ( FIG. 3B ).
  • the SiOBr deposit portion 46 blocks most of the opening 43 .
  • the wafer W is transferred into the chamber 11 of the substrate processing apparatus 10 , mounted on the mounting stage 12 , and heated by the heater 18 to a temperature of not less than 200° C. (step S 22 ) (heating step).
  • step S 23 hydrogen fluoride gas 31 and helium gas (not shown) are supplied from the shower head 13 toward the wafer W at flow rates of 2000 sccm to 3000 sccm and 100 sccm to 1000 sccm, respectively (step S 23 ) (gas supplying step).
  • the length of time that the hydrogen fluoride gas 31 is supplied is not more than 30 seconds.
  • the SiOBr deposit portion 46 is removed by the hydrogen fluoride gas 31 through the chemical reactions expressed by the above equations (1) to (3), but because the temperature of the wafer W is not less than 200° C., the hard mask 42 and the silicon nitride film 41 are not removed.
  • the SiOBr deposit portion 46 has been removed, the silicon base material 40 becomes exposed on the side face of the trench 45 ( FIG. 3C ).
  • oxygen radicals 32 are supplied toward the wafer W, more specifically, the interior of the trench 45 (step S 24 ) (oxygen radical supplying step).
  • the supplied oxygen radicals 32 react with silicon of the exposed silicon base material 40 to form a silicon oxide film 33 on the side face of the trench 45 ( FIG. 3D ).
  • the temperature of the oxygen radicals 32 is 350° C. to 750° C.
  • the wafer W is subjected again to the dry etching by the plasma 44 , so that the silicon base material 40 is etched (step S 25 ) (dry etching step) ( FIG. 3D ).
  • step S 25 dry etching step
  • the path over which the plasma 44 passes through the opening 43 and enters the trench 45 can be secured.
  • the plasma 44 that has entered the trench 45 etches the silicon base material 40 , so that the trench 45 is further deepened ( FIG. 3E ).
  • the silicon oxide film 33 protects the side face of the trench 45 from the plasma 44 .
  • the silicon of the silicon base material 40 and the plasma 44 react with each other to form an SiOBr deposit portion 46 ′ ( FIG. 3E ) as in the step S 21 .
  • step S 26 it is determined whether or not the depth of the trench 45 thus formed is more than a desired value (step S 26 ). If the depth of the trench 45 is not more than the desired value, the process returns to the step S 22 , and if the depth of the trench 45 is more than the desired value, the process is terminated.
  • the wafer W in which the trench 45 corresponding to the opening 43 of the hard mask 42 has been formed in the silicon base material 40 through the dry etching using the plasma 44 produced from hydrogen bromide gas is heated to a temperature of not less than 200° C., and then the hydrogen fluoride gas 31 and the helium gas are supplied toward the wafer W.
  • the hydrogen fluoride gas 31 removes the SiOBr deposit portion 46 produced through the dry etching of the silicon base material 40 , but does not remove the hard mask 42 made of BSG and the silicon nitride film 41 .
  • the SiOBr deposit portion 46 can be selectively removed.
  • the wafer W is subjected again to the dry etching using the plasma 44 .
  • the wafer W is subjected to the dry etching after the hydrogen fluoride gas 31 and the helium gas are supplied to remove the SiOBr deposit portion 46 that blocks most of the opening 43 , the path over which the plasma 44 passes through the opening 43 and enters the trench 45 can be secured.
  • the silicon base material 40 can be etched again, and hence the trench 45 that is deep can be formed in the silicon base material 40 .
  • the oxygen radicals 32 are supplied toward the wafer W after the hydrogen fluoride gas 31 and the helium gas are supplied and before the dry etching is carried out again.
  • the SiOBr deposit portion 46 has been removed by the supplied hydrogen fluoride gas 31 and helium gas, the silicon base material 40 becomes exposed on the side face of the trench 45 .
  • the oxygen radicals 32 react with the exposed silicon base material 40 to form the silicon oxide film 33 on the side face of the trench 45 .
  • the silicon oxide film 33 protects the side face of the trench 45 from the plasma 44 used in the dry etching of the step S 25 . As a result, the trench 45 can be prevented from becoming deformed.
  • the flow rate of the hydrogen fluoride gas 31 is 2000 sccm to 3000 sccm, a sufficient amount of hydrogen fluoride gas 31 can be supplied toward the wafer W, and hence the SiOBr deposit portion 46 can be reliably removed.
  • the length of time that the hydrogen fluoride gas 31 is supplied during the supply of the hydrogen fluoride gas 31 and the helium gas is not more than 30 seconds.
  • the absolute amount of SiOBr deposit portion 46 formed on the side face of the opening 43 and the like is relatively small, and hence the SiOBr deposit portion 46 can be removed through etching using the hydrogen fluoride gas 31 in a short time. Therefore, even if the length of time that the hydrogen fluoride gas 31 is supplied is not more than 30 seconds, the SiOBr deposit portion 46 can be reliably removed, and as a result, the throughput can be improved.
  • the hard mask 42 is a film made of BSG
  • the hard mask 42 has only to be a film composed mainly of silicate containing impurities, for example, a film made of TEOS (tetra ethyl ortho silicate) or BPSG (boron phosphorous silicate glass).
  • the hard mask 42 may be a film made of silicon nitride.
  • the plasma used for the dry etching of the silicon base material 40 is not limited to being the plasma 44 produced from hydrogen bromide, but rather may instead be plasma produced from halogenated gas.
  • deposit to be removed through etching using the hydrogen fluoride gas 31 is not limited to being deposit comprised of SiOBr, but rather may instead be silicon oxide containing halogen, for example, SiOCl.
  • the concave portion formed through the dry etching of the silicon base material 40 is not limited to being the trench 45 , but rather may instead be a hole, for example, a via hole.
  • the substrates are not limited to being semiconductor wafers W, but rather may instead be glass substrates used in LCDs (Liquid Crystal Displays), FPDs (Flat Panel Displays), or the like.
  • the object of the present invention may also be accomplished by supplying a computer with a storage medium in which a program code of software, which realizes the functions of the above described embodiment is stored, and causing a CPU of the computer to read out and execute the program code stored in the storage medium.
  • the program code itself read from the storage medium realizes the functions of the above described embodiment, and hence the program code and the storage medium on which the program code is stored constitute the present invention.
  • Examples of the storage medium for supplying the program code include a RAM, an NV-RAM, a floppy (registered trademark) disk, a hard disk, a magnetic-optical disk, an optical disk such as a CD-ROM, a CD-R, a CD-RW, a DVD-ROM, a DVD-RAM, a DVD-RW, or a DVD+RW, a magnetic tape, a nonvolatile memory card, and a ROM.
  • the program code may be supplied to a computer by downloading from another computer, a database, or the like, not shown, connected to the Internet, a commercial network, a local area network, or the like.
  • the functions of the above described embodiment may be accomplished by writing a program code read out from the storage medium into a memory provided in an expansion board inserted into a computer or a memory provided in an expansion unit connected to the computer and then causing a CPU or the like provided in the expansion board or the expansion unit to perform a part or all of the actual operations based on instructions of the program code.
  • the form of the program may be an object code, a program executed by an interpreter, or script data supplied to an OS.
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US8551877B2 (en) * 2012-03-07 2013-10-08 Tokyo Electron Limited Sidewall and chamfer protection during hard mask removal for interconnect patterning
US20200135898A1 (en) * 2018-10-30 2020-04-30 International Business Machines Corporation Hard mask replenishment for etching processes

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JP5424848B2 (ja) * 2009-12-15 2014-02-26 株式会社東芝 半導体基板の表面処理装置及び方法
JP5629098B2 (ja) * 2010-01-20 2014-11-19 東京エレクトロン株式会社 シリコン基板上のパターン修復方法
KR20130039963A (ko) * 2011-10-13 2013-04-23 주식회사 테스 기판처리시스템 및 이를 이용한 기판처리방법
JP6141855B2 (ja) * 2012-09-18 2017-06-07 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US20150371889A1 (en) * 2014-06-20 2015-12-24 Applied Materials, Inc. Methods for shallow trench isolation formation in a silicon germanium layer
JP6946248B2 (ja) * 2018-09-26 2021-10-06 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
WO2023239617A1 (en) * 2022-06-09 2023-12-14 Lam Research Corporation In situ declogging in plasma etching

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US20200135898A1 (en) * 2018-10-30 2020-04-30 International Business Machines Corporation Hard mask replenishment for etching processes

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