JP6946248B2 - 半導体装置の製造方法、基板処理装置およびプログラム - Google Patents
半導体装置の製造方法、基板処理装置およびプログラム Download PDFInfo
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- JP6946248B2 JP6946248B2 JP2018180011A JP2018180011A JP6946248B2 JP 6946248 B2 JP6946248 B2 JP 6946248B2 JP 2018180011 A JP2018180011 A JP 2018180011A JP 2018180011 A JP2018180011 A JP 2018180011A JP 6946248 B2 JP6946248 B2 JP 6946248B2
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- gas supply
- inert gas
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- substrate
- deep groove
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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Description
ここではチャンバを説明する。
基板処理装置200はチャンバ202を有する。チャンバ202は、例えば横断面が円形であり扁平な密閉容器として構成されている。また、チャンバ202は、例えばアルミニウム(Al)やステンレス(SUS)などの金属材料により構成されている。チャンバ202内には、基板としてのシリコン基板等の基板100を処理する処理空間205と、基板100を処理空間205に搬送する際に基板100が通過する搬送空間206とが形成されている。チャンバ202は、上部容器202aと下部容器202bで構成される。上部容器202aと下部容器202bの間には仕切り板208が設けられる。
シャワーヘッド230は、蓋231を有する。蓋231はフランジ232を有し、フランジ232は上部容器202a上に支持される。更に、蓋231は位置決め部233を有する。位置決め部233が上部容器202aに勘合されることで、蓋231が固定される。
続いてガス供給部を説明する。ガス供給部は処理ガスを供給する構成である。共通ガス供給管242には、第一ガス供給管243a、第二ガス供給管244a、第三ガス供給管245aが接続されている。
第一ガス供給管243aには、上流方向から順に、第一ガス供給源243b、流量制御器(流量制御部)であるマスフローコントローラ(MFC)243c、及び開閉弁であるバルブ243dが設けられている。
第二ガス供給管244aの上流には、上流方向から順に、反応ガス供給源244b、流量制御器(流量制御部)であるマスフローコントローラ(MFC)244c、及び開閉弁であるバルブ244dが設けられている。反応ガスをプラズマ状態とする場合には、バルブ244dの下流にリモートプラズマユニット(RPU)244eを設ける。
第三ガス供給管245aには、上流方向から順に、第三ガス供給源245b、流量制御器(流量制御部)であるマスフローコントローラ(MFC)245c、及び開閉弁であるバルブ245dが設けられている。
チャンバ202の雰囲気を排気する排気部は、処理空間205の雰囲気を排気する排気部261で主に構成される。
基板処理装置200は、基板処理装置200の各部の動作を制御するコントローラ280を有している。コントローラ280は、図2に記載のように、演算部(CPU)280a、一時記憶部280b、記憶部280c、送受信部280dを少なくとも有する。コントローラ280は、送受信部280dを介して基板処理装置200の各構成に接続され、上位コントローラや使用者の指示に応じて記憶部280cからプログラムやレシピを呼び出し、その内容に応じて各構成の動作を制御する。なお、コントローラ280は、専用のコンピュータとして構成してもよいし、汎用のコンピュータとして構成してもよい。例えば、上述のプログラムを格納した外部記憶装置(例えば、磁気テープ、フレキシブルディスクやハードディスク等の磁気ディスク、CDやDVD等の光ディスク、MO等の光磁気ディスク、USBメモリ(USB Flash Drive)やメモリカード等の半導体メモリ)282を用意し、外部記憶装置282を用いて汎用のコンピュータにプログラムをインストールすることにより、本実施形態に係るコントローラ280を構成することができる。また、コンピュータにプログラムを供給するための手段は、外部記憶装置282を介して供給する場合に限らない。例えば、インターネットや専用回線等の通信手段を用いても良いし、上位装置270から送受信部283を介して情報を受信し、外部記憶装置282を介さずにプログラムを供給するようにしてもよい。また、キーボードやタッチパネル等の入出力装置281を用いて、コントローラ280に指示をしても良い。
続いて、処理対象の半導体装置の一例を図3から図7を用いて説明する。処理対象の半導体装置は、積層タイプのメモリである。図4は、図3に記載のホール106に電荷トラップ膜等を充填させた状態の図である。図5は充填絶縁膜110等を充填させた状態の図である。図6は犠牲膜104を除去した状態であり、空隙111が形成された状態の図である。図7は空隙11に金属膜112を充填させた図である。
図4の108dは積層膜108の上部を示し、108eは積層膜108の下部を示す。上部108dはホール106の上方に形成された部分であり、下部108eはホール106の底部分に形成された部分である。
深溝に対して、後述する図10に記載の交互供給法で膜を形成する場合、深溝中の空間(図9においてはホール106)に副生成物が発生する。ここでいう副生成物とは、例えば下地の膜に結合できなかったガスの余剰成分や、あるいはガスが反応した際に発生した、膜成分と異なる成分である。
前述のように、パージ工程では不活性ガスが処理室に供給される。その際、パージガスの成分が深溝上部に侵入し、それが深溝上部に滞留した副生成物を押し出す。図9においては、副生成物115aがパージガスによって押し出される。ところが、パージ工程を短時間で行う場合、深溝下部にはパージガスが届きにくい。深溝下部にパージガスを届かせるには、パージガスの流量を著しく増加するか、多くの時間をかける必要がある。しかしながら、生産性の観点から、パージ工程でパージガスの流量を著しく増加することや、多くの時間をかけることは望ましくない。
図10、図11を用いて基板処理装置200を用いた基板処理工程について説明する。図10は処理フローを説明する図であり、図11は各フローとガス流量、圧力との関係を示した図である。
基板搬入・載置工程を説明する。図10においては、本工程の説明を省略する。
基板処理装置200では基板載置台212を基板100の搬送位置(搬送ポジション)まで下降させることにより、基板載置台212の貫通孔214にリフトピン207を貫通させる。その結果、リフトピン207が、基板載置台212表面よりも所定の高さ分だけ突出した状態となる。
第一処理ガス供給工程S202を説明する。基板100を加熱して所望とする温度に達すると、バルブ243dを開くと共に、DCSガスの流量が所定の流量となるように、マスフローコントローラ243cを調整する。なお、DCSガスの供給流量は、例えば100sccm以上800sccm以下である。
第一パージ工程S204を説明する。バルブ245dを開けて第三ガス供給管245aからN2ガスを供給し、シャワーヘッド230および処理空間205および深溝中に存在する副生成物のパージを行う。それと並行して、第一不活性ガス供給管246a、第二不活性ガス供給管247aから不活性ガスを供給する。
第二処理ガス供給工程S206を説明する。バルブ245dを閉じて第一パージ工程S204を終了させたら、バルブ244dを開けて、シャワーヘッド230を介して、処理空間205内に酸素ガスの供給を開始する。
第二パージ工程S208を説明する。第一パージ工程S204と同様、第三ガス供給管245aからN2ガスを供給し、シャワーヘッド230および処理空間205のパージを行う。
判定S210を説明する。コントローラ280は、上記1サイクルを所定回数(n cycle)実施したか否かを判定する。
基板搬出工程では、基板載置台212を下降させ、基板載置台212の表面から突出させたリフトピン207上に基板100を支持させる。これにより、基板100は処理位置から搬送位置となる。その後、ゲートバルブ149を開き、アーム(不図示)を用いて基板100をチャンバ202の外へ搬出する。
続いて第二実施形態について説明する。
第二実施形態では、パージ工程の動作が異なる。他の構成は第一実施形態と同様であるので説明を省略する。以下に、本実施形態のパージ工程の詳細を説明する。なお、本実施形態におけるパージ工程は、第一実施形態における第一パージ工程S204、第二パージ工程S208に相当する構成である。
本実施形態のパージ工程は複数段階で行われる。具体的には、第一サブパージ工程S302と第二サブパージ工程S304が行われる。次に具体的な動作について説明する。
第一サブパージ工程S302を説明する。従来と同様に、処理空間205に不活性ガスを供給する。ここでは、第一不活性ガス供給部、第二不活性ガス供給部、第三ガス供給部から不活性ガスを供給し、処理空間205を高圧状態としている。
続いて第二サブパージ工程S304を説明する。第二サブパージ工程S304でも、処理空間205に不活性ガスを供給する。ここでは、第三ガス供給部からは不活性ガスの供給を停止し、第一不活性ガス供給部、第二不活性ガス供給部から不活性ガスを供給する。第三ガス供給部において不活性ガスの供給を停止する際は、バルブ245dを閉とする。
以上のような方法では、生産性が低下してしまう。
102 絶縁膜
103 犠牲膜
106 ホール
115 副生成物
200 基板処理装置
205 処理空間
243 第一ガス供給部
244 第二ガス供給部
245 第三ガス供給部
261 排気部
Claims (6)
- 少なくとも上部と下部とで構成される深溝を有する基板を、処理室内に備えられた基板支持部で支持する基板載置工程と、
前記処理室に、処理ガスを供給して前記深溝の内側表面に層を形成する処理ガス供給工程と、
前記処理室に連通され、バルブが設けられた少なくとも二本の不活性ガス供給管のうち、それぞれのバルブを開として前記処理室に不活性ガスを供給する第一サブパージ工程と、前記第一サブパージ工程の後、一方の前記不活性ガス供給管に設けられたバルブを開とし、他方の不活性ガス供給管に設けられたバルブを閉として、前記第一サブパージ工程の圧力よりも低い圧力とするよう、前記処理室に不活性ガスを供給する第二サブパージ工程とを行い、前記処理ガス供給工程にて前記深溝の内側空間に生成された副生成物を排出するパージ工程と
を有する半導体装置の製造方法。 - 前記パージ工程では、不活性ガスを供給しつつ、前記処理室から雰囲気を排気する請求項1に記載の半導体装置の製造方法。
- 前記処理ガス供給工程における不活性ガス供給量は、前記パージ工程における不活性ガス供給量よりも少ない請求項1または請求項2に記載の半導体装置の製造方法。
- 前記第一サブパージ工程では、前記処理室に不活性ガスを供給すると共に、前記処理室から雰囲気を排気する請求項1に記載の半導体装置の製造方法。
- 処理室内に備えられ、少なくとも上部と下部で構成される深溝を有する基板を載置する基板支持部と、
前記処理室に処理ガスを供給するガス供給部と、
前記処理室から雰囲気を排気する排気部と、
前記処理室に連通され、バルブが設けられた少なくとも二本の不活性ガス供給管と、
前記処理室に、処理ガスを供給して前記深溝の内側表面に層を形成する処理と、
それぞれの前記バルブを開として前記処理室に不活性ガスを供給する処理と、その後、一方の前記バルブを開とし、他方の前記バルブを閉として、該処理の圧力よりも低い圧力とするよう、前記処理室に不活性ガスを供給する処理とを行い、前記層を形成する処理にて前記深溝の内側空間に生成された副生成物を排出するよう制御可能な制御部と
を有する基板処理装置。 - 少なくとも上部と下部とで構成される深溝を有する基板を、処理室内に備えられた基板支持部で支持する手順と、
前記処理室に、処理ガスを供給して前記深溝の内側表面に層を形成する手順と、
前記処理室に連通され、バルブが設けられた少なくとも二本の不活性ガス供給管のうち、それぞれのバルブを開として前記処理室に不活性ガスを供給する第一手順と、その後、一方の前記不活性ガス供給管に設けられたバルブを開とし、他方の不活性ガス供給管に設けられたバルブを閉として、前記第一手順の圧力よりも低い圧力とするよう、前記処理室に不活性ガスを供給する第二手順とを行い、前記層を形成する手順にて前記深溝の内側空間に生成された副生成物を排出する手順と
をコンピュータによって基板処理装置に実行させるプログラム。
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WO2017022086A1 (ja) * | 2015-08-04 | 2017-02-09 | 株式会社日立国際電気 | 半導体装置の製造方法、エッチング方法、及び基板処理装置並びに記録媒体 |
JP6436887B2 (ja) | 2015-09-30 | 2018-12-12 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム |
JP6907518B2 (ja) | 2016-01-15 | 2021-07-21 | 東京エレクトロン株式会社 | 真空処理装置及び真空処理装置の運転方法。 |
US9768034B1 (en) * | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
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