US8277694B2 - Sintered compact of composite oxide, amorphous film of composite oxide, process for producing said film, crystalline film of composite oxide and process for producing said film - Google Patents

Sintered compact of composite oxide, amorphous film of composite oxide, process for producing said film, crystalline film of composite oxide and process for producing said film Download PDF

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US8277694B2
US8277694B2 US12/668,216 US66821608A US8277694B2 US 8277694 B2 US8277694 B2 US 8277694B2 US 66821608 A US66821608 A US 66821608A US 8277694 B2 US8277694 B2 US 8277694B2
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film
composite oxide
calcium
ratio
amorphous
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US20100140570A1 (en
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Masakatsu Ikisawa
Masataka Yahagi
Kozo Osada
Takashi Kakeno
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JX Nippon Mining and Metals Corp
Nippon Mining Holdings Inc
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Definitions

  • the present invention relates to a crystalline film of composite oxide and its production method and an amorphous film of composite oxide and its production method which are to be used as an electrode in a flat panel display or the like, as well as to a sintered compact of composite oxide to be used in producing the foregoing oxide films.
  • An ITO (Indium Tin Oxide) film is characterized in low resistivity and high transmission factor, and can be microfabricated easily. Since these characteristics are superior in comparison to other transparent conductive films, an ITO film is being broadly used in various fields including for use as a display electrode in a flat panel display.
  • the deposition method of the ITO film in today's industrial production process is mostly based on the so-called sputter deposition method of performing sputtering using an ITO sintered compact as the target since the ITO film can be uniformly formed on a large area with favorable productivity.
  • the crystallinity of the ITO film immediately after the sputtering is amorphous, and, in most cases, microfabrication such as etching is performed with the ITO film in an amorphous state, and thermal annealing is subsequently performed to crystallize the ITO film.
  • microfabrication such as etching is performed with the ITO film in an amorphous state, and thermal annealing is subsequently performed to crystallize the ITO film.
  • the film obtained by sputtering the ITO target is amorphous, in many cases a part of the film becomes crystallized.
  • the reason for this is that some particles that adhere to the substrate due to sputtering have a high energy level, the temperature of the film becomes so high as to exceed the crystallization temperature due to the transfer of energy after the particles adhere to the substrate, and a part of the film consequently becomes crystallized, although the crystallization temperature of the ITO film is approximately 150° C. and most of the film is amorphous since it will be lower than 150° C.
  • the concentration in the sputtering chamber is initially an adequate water concentration, the concentration will gradually fall below the adequate concentration, and a part of the sputtered film will become crystallized, since it gradually decreases pursuant to the lapse of the sputtering time.
  • a transparent conductive material as a stable amorphous material is sometimes used in substitute for an ITO film in which a crystalline film can be easily formed.
  • a sintered compact having a composition of adding zinc to indium oxide as the target it is known that such a target can be sputtered to obtain an amorphous film, but the sputtered film obtained as described above is an extremely stable amorphous material and will not crystallize unless it is subject to a high temperature of 500° C. or higher.
  • the resistivity of the sputtered film will be approximately 0.45 m ⁇ cm, which is higher than the crystallized ITO film.
  • the visible light average transmission factor of this film is roughly 85%, and is inferior to an ITO film.
  • Patent Document 1 JP Patent Laid-Open Publication No. 2003-105532
  • Patent Document 2 JP Patent Laid-Open Publication No. 2004-149883
  • the object of these Patent Documents is only to obtain a high resistivity film, and does not contain any perspective based on the technical concept on the crystallinity of the film during deposition or the crystallization of the film based on the subsequent annealing process.
  • Non-Patent Document 1 Thin Solid Films 445 (2003) p 235 to 240
  • Patent Document 1 JP Patent Laid-Open Publication No. 2003-105532
  • Patent Document 2 JP Patent Laid-Open Publication No. 2004-149883
  • the conventional technology which uses a sintered compact having a composition of adding zinc to indium oxide as the target is insufficient as a solution since it has drawbacks such as the film resistivity being high.
  • patent documents and the like that are similar to the present invention in certain respects as a matter of form such as including descriptions of adding calcium to ITO do not give consideration to the problems that are indicated by the present invention, and simply aim to achieve the high resistivity of the film by adding calcium and the like.
  • the foregoing patent documents and the like do not include the technical concept of controlling the crystallinity of the film or leveraging the low resistivity of the crystallized film as with the present invention.
  • the additive amount is too high, and there are no descriptions on favorable film characteristics of the present invention or descriptions in the Examples regarding the production method and the like.
  • an object of the present invention is to provide an ITO thin film, its production method, and a sintered compact for producing such a film for use as a display electrode or the like in a flat panel display which can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition.
  • This sputtered film a part of the crystallized film will not remain as residue during the etching process, and superior etching properties are yielded by etching at a relatively fast etching rate and the like.
  • this sputtered film can be crystallized by annealing at a temperature that is not too high, and the resistivity after crystallization is sufficiently low.
  • the present inventors discovered that the foregoing problems can be overcome by sputtering a sintered compact obtained by adding an adequate concentration of calcium or calcium and magnesium to ITO under prescribed conditions, and annealing the obtained sputtered film under prescribed conditions, and thereby achieved the present invention.
  • the present invention provides:
  • a sintered compact of composite oxide substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen.
  • the present invention additionally provides:
  • the present invention further provides:
  • an extremely efficient method is to produce a sintered compact having the same component composition as the amorphous film of composite oxide for use in sputtering.
  • An amorphous film of composite oxide substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen.
  • the present invention further provides:
  • a method of producing a crystalline film of composite oxide wherein after producing an amorphous film of composite oxide substantially comprised of indium, tin, calcium and oxygen in that tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, the film is crystallized by annealing at a temperature of 260° C. or lower.
  • the amorphous film of composite oxide formed on a substrate can be easily transformed into a crystalline film of composite oxide by annealing at a relatively low temperature. This is one of the significant features of the present invention.
  • the present invention additionally provides:
  • a crystalline film of composite oxide substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen.
  • calcium is added as an essential component in the ITO composite oxide film.
  • the inclusion of calcium plays an important role in the amorphization of the ITO composite oxide film.
  • the present invention further provides:
  • This crystalline film of composite oxide has the same composition as the amorphous film of composite oxide of paragraph 4) above, but a film having considerably lower resistivity can be formed.
  • the present invention additionally provides:
  • a sintered compact of composite oxide substantially comprised of indium, tin, calcium, magnesium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca+Mg) and a total amount of calcium and magnesium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of (Ca+Mg)/(In+Sn+Ca+Mg), and remnant is indium and oxygen.
  • the present invention further provides:
  • the present invention additionally provides:
  • an extremely efficient method is to produce a sintered compact having the same component composition as the amorphous film of composite oxide for sputtering.
  • the present invention further provides:
  • An amorphous film of composite oxide substantially comprised of indium, tin, calcium, magnesium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca+Mg) and a total amount of calcium and magnesium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of (Ca+Mg)/(In+Sn+Ca+Mg), and remnant is indium and oxygen.
  • the present invention additionally provides:
  • a method of producing a crystalline film of composite oxide wherein after producing an amorphous film of composite oxide substantially comprised of indium, tin, calcium, magnesium and oxygen in which tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca+Mg) and a total amount of calcium and magnesium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of (Ca+Mg)/(In+Sn+Ca+Mg), and remnant is indium and oxygen, the film is crystallized by annealing at a temperature of 260° C. or lower.
  • the amorphous film of composite oxide formed on a substrate can be easily transformed into a crystalline film of composite oxide by annealing at a relatively low temperature. This is one of the significant features of the present invention.
  • the present invention further provides:
  • a crystalline film of composite oxide substantially comprised of indium, tin, calcium, magnesium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca+Mg) and a total amount of calcium and magnesium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of (Ca+Mg)/(In+Sn+Ca+Mg), and remnant is indium and oxygen.
  • calcium and magnesium are additionally contained as essential components in the ITO composite oxide film.
  • the inclusion of calcium and magnesium plays an important role in the amorphization of the ITO composite oxide film.
  • the present invention additionally provides:
  • This crystalline film of composite oxide has the same composition as the amorphous film of composite oxide of paragraph 11) above, but a film having considerably lower resistivity can be formed.
  • the first feature of the present invention is that the added calcium and the like prevent from crystallization based on the effect of disconnecting the ITO network structure coupling. If the aim is to simply prevent the crystallization of the ITO film, such aim can be achieved by making the additive concentration to be extremely high.
  • the characteristic feature of the present invention lies in that it is possible to realize both the amorphization of the sputtering film during deposition, and achievement of crystallization and low resistivity of the film in the subsequent annealing at an adequate temperature, and the present invention has a novel technical concept that is able to overcome the foregoing problems for the first time.
  • the present invention by using a sputtering target obtained by adding an adequate concentration of calcium and the like to ITO in sputter deposition under prescribed conditions without adding water during deposition or heating the substrate, it is possible to obtain a film which is entirely amorphous. Moreover, this film is able to enjoy the advantages of an ITO amorphous film which will not encounter any problem of etching residue in the subsequent etching process and the etching rate is faster by roughly two orders of magnitude in comparison to a crystalline ITO film. Moreover, it is able to yield an extremely superior effect of enjoying the advantage of crystallizing the film by annealing at a temperature that is not too high after deposition and attaining lower resistivity of the film.
  • FIG. 1 is a diagram showing an electron micrograph of the film surface midway during the etching of the sputtered film of Example 1;
  • FIG. 2 is a diagram showing an electron micrograph of the film surface midway during the etching of the sputtered film of Comparative Example 1.
  • the sintered compact of composite oxide, amorphous film of composite oxide, crystalline film of composite oxide, method of producing amorphous film of composite oxide, and method of producing crystalline composite oxide [film] according to the present invention are now explained in further detail.
  • the sintered compact of composite oxide of the present invention that is useful as a sintered compact of composite oxide for forming a transparent conductive film is substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen.
  • Sn, In, and Ca represents the atomicity of tin, indium and calcium, respectively, and show the adequate concentration range of the atomicity ratio of tin and calcium in relation to the total atomicity of indium, tin and calcium as all-metal atoms, respectively.
  • composition of the sputtering target for forming the transparent conductive film and the composition of the transparent conductive film are substantially the same as the composition of the oxide sintered compact for forming the transparent conductive film.
  • the sputtering target was obtained by simply processing the oxide sintered compact into a prescribed diameter and thickness, and the transparent conductive film is a film obtained by subjecting the sputtering target to sputter deposition. Thus, there is hardly any difference in the composition of the sputtering target and the composition of the film obtained by way of sputter deposition.
  • substantially means that, although the constituent elements of the sintered compact of composite oxide for forming the transparent conductive film are comprised only from four types of elements; namely, indium, tin, calcium, and oxygen, even if inevitable impurities contained in a commercially available raw material and which can not be eliminated with a standard refining method during the production of such raw material are included in an inevitable concentration range, the present invention covers all aspects including the above. In other words, inevitable impurities are covered by the present invention.
  • the tin concentration Sn is normally Sn/(In+Sn) is roughly 10%. If the tin concentration is too low, the electron donation will be low. Contrarily, if the tin concentration is too high, this will result in electron scattered impurities. In both cases, the resistivity of the film obtained by way of sputtering will become high. Accordingly, since the adequate range of tin concentration Sn as an ITO is in a range of 5 to 15% with the formula of Sn/(In+Sn+Ca), the tin concentration in the present invention is defined.
  • the annealing temperature required to crystallize the amorphous film obtained by sputtering will become a high temperature exceeding 260° C., which is unsuitable in terms of productivity since much cost, time and labor will be spent for implementing such process.
  • the calcium concentration is desirably in the ratio of 0.1 to 2.0% based on the atom ratio of Ca/(In+Sn+Ca) as defined in the present invention.
  • the calcium concentration was determined as described above.
  • indium oxide powder, tin oxide powder and calcium oxide powder as the raw materials are weighed and mixed at a prescribed ratio. Insufficient mixing will cause a high resistivity area and a low resistivity area in the produced target where calcium oxide is segregated and abnormal discharge such as arcing due to electrification in the high resistivity area will occur easily during the sputter deposition.
  • the atmospheric gas may be air since there is no need to give special consideration in preventing the oxidation of the raw material.
  • the raw material may also be preliminarily calcinated as a mixed powder of indium oxide and calcium oxide or a mixed powder of tin oxide and calcium oxide.
  • the mixed powder is subsequently pulverized, which aims to uniformly distribute the raw material powder in the target.
  • Raw material with a large grain size means that there is variation in the composition depending on the location.
  • pulverization is performed so that the average grain size (D50) of the raw material powder is up to 1 ⁇ m or less, preferably 0.6 ⁇ m or less.
  • water is added to the mixed powder to obtain slurry in which the solid content is 40 to 60%, and pulverization is performed with zirconia beads having a diameter of 1 mm for roughly 1.5 to 3.0 hours.
  • Granulation of the mixed powder is subsequently performed. Granulation is performed to improve the fluidity of the raw material powder and to make the filling state of such raw material powder during the press molding sufficiently favorable.
  • PVA polyvinyl alcohol
  • PVA polyvinyl alcohol
  • Granulated powder is filled in a mold of a prescribed size to obtain a compact at a surface pressure of 700 to 900 kgf/cm 2 . If the surface pressure is 700 kgf/cm 2 or less, it is not possible to obtain a compact having sufficient density, and making the surface pressure to be 900 kgf/cm 2 or higher is not necessary and this is undesirable since it will also require wasteful cost and energy.
  • the sintering temperature is 1450 to 1600° C.
  • the retention time is 4 to 10 hours
  • the rate of temperature increase is 4 to 6° C./minute
  • cooling is performed with furnace cooling. If the sintering temperature is lower than 1450° C., the density of the sintered compact will be insufficient, and if the sintering temperature exceeds 1600° C., it will shorten the life of the furnace heater. If the retention time is shorter than 4 hours, the reaction among the raw material powders will not advance sufficiently, and the density of the sintered compact will be insufficient. Even if the sintering time exceeds 10 hours, since the reaction is already sufficient, this is undesirable from the perspective of productivity since energy and time will be wasted.
  • the rate of temperature increase is less than 4° C./minute, much time will be required in attaining a prescribed temperature. Meanwhile, if the rate of temperature increase is greater than 6° C./minute, the temperature distribution within the furnace will not rise uniformly, and there will be unevenness.
  • the relative density of the sintered compact obtained as described above will be approximately 99.9% and the bulk resistance will be approximately 0.13 m ⁇ cm.
  • the oxide sintered compact can be processed into a size having a thickness of roughly 4 to 6 mm and a diameter to fit the sputtering device, and a sputtering target can be obtained by affixing the oxide sintered compact to a copper backing plate with a bonding metal such as indium alloy or the like.
  • the transparent conductive film of the present invention can be obtained by using the sputtering target of the present invention to perform DC magnetron sputter deposition with an argon gas pressure of 0.4 to 0.8 Pa, spacing between the target and the substrate at 50 to 110 mm, using glass or the like as the substrate without heating the substrate, and a sputtering power of 200 to 900 W in a case where the target size is 8 inches.
  • the substrate spacing is shorter than 50 mm, the kinetic energy of the particles of the constituent elements of the target that reach the substrate will become too large and cause substantial damage to the substrate, whereby the film resistivity will increase and a part of the film may become crystallized.
  • the spacing between the target and the substrate is longer than 110 mm, the kinetic energy of the particles of the constituent elements of the target that reach the substrate will become too small, whereby a dense film cannot be formed and the resistivity will become high.
  • the adequate range of the argon gas pressure and the sputtering power has also been defined as described above for similar reasons.
  • the film tends to crystallize easily. Accordingly, the obtained film will become amorphous by adequately selecting the foregoing sputtering conditions.
  • the determination of crystallinity of the transparent conductive film obtained as described above can be confirmed based on the existence of a peak shown with a crystalline film and whether there is etching residue as shown with a crystalline film in the etching of the film with oxalic acid in the X-ray diffraction measurement (XRD measurement) of the film.
  • XRD measurement X-ray diffraction measurement
  • the resistivity of the film can be sought with the Hall Effect measurement.
  • crystallization can be achieved by performing annealing at a temperature of 160 to 260° C. for 30 to 60 minutes under a nitrogen atmosphere, whereby the temperature and length will vary slightly depending on the additive element.
  • the crystallization of the film can be confirmed from the peak intensity becoming extremely strong in the XRD measurement or from the etching rate in the etching of the film using oxalic acid decreasing by roughly two orders of magnitude in comparison to the amorphous film.
  • the crystallized film is able to realize low resistivity of 4 ⁇ 10 ⁇ 4 m ⁇ cm or lower since the electron ejection effect based on tin will be sufficient and both the carrier concentration and mobility will increase, whereby this will vary slightly depending on the additive element concentration.
  • granulated powder was filled in a mold of a prescribed size to obtain a target having an 8-inch diameter, and pressed at a surface pressure of 780 kgf/cm 2 to obtain a compact.
  • the compact was heated up to 1540° C. at a rate of temperature increase of 5° C./minute, retained for 5 hours at 1540° C., and cooled in the form of sintering using furnace cooling.
  • a sputtering target was obtained by affixing the oxide sintered compact to a copper backing plate with a bonding metal such as indium alloy or the like.
  • the resistivity was 0.18 m ⁇ cm.
  • the foregoing sputtering target was used to perform DC magnetron sputter deposition with an argon gas pressure of 0.5 Pa, spacing between the target and the substrate at 80 mm, using non-alkali glass as the substrate, and, with the substrate in a non-heated stated, and sputtering power of 785 W and deposition time of 22 seconds in order to obtain a film having a thickness of approximately 550 ⁇ .
  • a peak showing crystallinity could not be acknowledged.
  • the electron micrograph of the film surface midway during the etching is shown in FIG. 1 . Based on the results of the two types of evaluations for determining the film characteristics, the obtained film has been determined as amorphous.
  • the foregoing amorphous film was annealed under a nitrogen atmosphere at the respective temperatures of 100 to 210° C. for 60 minutes in 10° C. intervals, and the XRD measurement, resistivity, and transmission factor of the annealed film were measured.
  • the peak intensity in the XRD measurement gradually becomes larger, but the peak intensity suddenly increases from a certain temperature, and subsequently becomes stable. Moreover, pursuant to the increase in the annealing temperature, the film resistivity decreases, but the film resistivity suddenly decreases from a certain temperature, and subsequently becomes stable.
  • the crystallization temperature of this film was 177° C., and the resistivity of the crystallized film was 0.21 m ⁇ cm. These results are shown in Table 1. Moreover, the transmission factor at a wavelength of 550 nm was 90%.
  • Example 1 90.78 9.08 0.14 0.00 0.00 amorphous 177 0.21
  • Example 2 90.66 9.07 0.27 0.00 0.00 amorphous 188 0.26
  • Example 3 90.41 9.04 0.55 0.00 0.00 amorphous 206 0.28
  • Example 4 89.91 8.99 1.10 0.00 0.00 amorphous 223 0.33
  • Example 5 89.41 8.94 1.65 0.00 0.00 amorphous 238 0.37
  • Example 6 89.09 8.91 2.00 0.00 0.00 amorphous 243 0.39
  • Example 7 90.78 9.08 0.07 0.07 0.00 amorphous 183 0.22
  • Example 8 90.66 9.07 0.135 0.135 0.00 amorphous 194 0.26
  • Example 9 90.66 9.07 0.09 0.18 0.00 amorphous 197 0.27
  • Example 10 90.78 9.08 0.14 0.00 0.00 amorphous 177 0.21
  • Example 1 The sintered compact composition of Example 1 was changed as follows in Examples 2 to 6, whereby the other conditions are the same as Example 1.
  • the resistivity was in the range of 0.15 to 0.18 m ⁇ cm.
  • the crystallinity during deposition, the crystallization temperature, and the resistivity of the crystallized film were shown in Table 1, respectively.
  • the crystallinity of the deposited film was amorphous in all of the Examples, and, although the crystallization temperature gradually increases to a higher temperature pursuant to the increase in the calcium additive concentration, as evident from the results of Example 6, the crystallization temperature was 243° C., which is not too high.
  • the resistivity of the crystallized film gradually increases pursuant to the increase in the calcium additive concentration, as evident from the results of Example 6, the resistivity was 0.39 m ⁇ cm, and this value remained smaller than 0.45 m ⁇ cm, which is the resistivity of the amorphous film in which zinc was added to indium oxide in the case of Comparative Example 2 described later.
  • the calcium concentration and the total of calcium and magnesium were made to coincide. Specifically, the calcium concentration of Example 1 and the total concentration of calcium and magnesium in Example 7 were made to be the same. Moreover, the calcium concentration of Example 2 and the total concentration of calcium and magnesium in Examples 8, 9, and 10 were made to be the same, respectively, and the concentration of calcium and magnesium in Examples 8, 9, and 10 was changed to 1:1, 1:2, and 2:1, respectively.
  • Example 3 and Example 11 Example 4 and Example 12, Example 5 and Example 13, and Example 6 and Example 14 were made to be the same.
  • the resistivity was in the range of 0.15 to 0.18 m ⁇ cm.
  • the crystallinity during deposition, the crystallization temperature, and the resistivity of the crystallized film were shown in Table 1, respectively.
  • the crystallinity of the deposited film was amorphous in all of the foregoing Examples, and the crystallization temperature gradually increases to a higher temperature pursuant to the increase in the total additive concentration of calcium and magnesium.
  • the resistivity of the crystallized film was basically the same, although the crystallization temperature was approximately 6° C. higher in the case of adding both calcium and magnesium in comparison to the case of adding only calcium when the calcium concentration and the total concentration of calcium and magnesium were made to be the same.
  • the resistivity of the crystallized film gradually increases pursuant to the increase in the additive concentration of calcium [and magnesium], as evident from the results of Example 14, the resistivity was 0.40 m ⁇ cm, and this value remained smaller than 0.45 m ⁇ cm, which is the resistivity of the amorphous film in that zinc was added to indium oxide in the case of Comparative Example 2 described later.
  • Comparative Examples 1 and 2 as a sintered compact, a composition obtained by adding tin or zinc to indium oxide in the sintered compact of Example 1 was used, whereby the other conditions are the same as the conditions of Example 1.
  • FIG. 2 the electron micrograph of the film surface midway during the etching of the film of Comparative Example 1 is shown in FIG. 2 . A portion of the film crystallized as etching residue can be observed.
  • Example 1 the sintered compact composition of Example 1 was changed as follows, whereby the other conditions are the same as the conditions of Example 1.
  • Comparative Example 3 has a low calcium additive concentration and Comparative Example 4 has a high calcium additive concentration.
  • the crystallinity during deposition, the crystallization temperature, and the resistivity of the crystallized film were as shown in Table 1, respectively.
  • the present invention it is possible to obtain an ITO film in which the entire film is amorphous by subjecting the target to sputter deposition without adding water.
  • the present invention is extremely useful as a transparent conductor with respect to the point that the film will subsequently crystallize by annealing at a temperature that is not too high, the etching rate of the film will decrease, and the resistivity of the film will become low.

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