US7368011B2 - Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal - Google Patents

Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal Download PDF

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US7368011B2
US7368011B2 US11/192,039 US19203905A US7368011B2 US 7368011 B2 US7368011 B2 US 7368011B2 US 19203905 A US19203905 A US 19203905A US 7368011 B2 US7368011 B2 US 7368011B2
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silicon single
crucible
single crystal
pulling rate
pulling
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US20060027160A1 (en
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Youji Suzuki
Satoshi Sato
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SUMITO MITSUBISHI SILICON Corp
Sumco Corp
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Sumitomo Mitsubishi Silicon Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Definitions

  • the present invention relates to an apparatus and a method for manufacturing a silicon single crystal which is manufactured by pulling up a silicon single crystal by the Czochralski method (the CZ method), and to a silicon single crystal which is manufactured by using this apparatus or method.
  • a silicon single crystal is manufactured by heating up a polycrystalline silicon raw material filled in a crucible using a heater to obtain a molten silicon, and pulling up a silicon single crystal from the molten silicon to grow by the CZ method.
  • a silicon wafer is manufactured by slicing (cutting) the silicon single crystal which is manufactured by the above described method, and integrated circuits is formed on the silicon wafer. Considering a formation of the integrated circuits on the silicon wafer, it is desirable that the silicon wafer has a high quality in which the number of COPs (Crystal Originated Particles) exerting an influence on a gate oxide integrity of the silicon wafer is small.
  • COPs Crystal Originated Particles
  • V/G is a ratio of the pulling rate V of the silicon single crystal and a temperature gradient G in a vertical direction in a vicinity of a solid-liquid interface of the silicon single crystal. That is to say, it is necessary to keep the value of V/G within a predetermined range in order to manufacture a single crystal in which the number of COPs is low (largely depends on a distribution of defects) with a stabile quality.
  • the measurement values measured by the temperature sensor varies greatly, depending on a position of the temperature sensor with respect to the silicon single crystal which is pulled out. Accordingly, it is necessary to adjust the position of the temperature sensor precisely for each production batch, and a lot of work and time are required for arranging and managing the temperature sensor.
  • the production batch means a whole set of processes performed to manufacture one silicon single crystal. Since a large number of apparatuses for manufacturing silicon single crystals are provided in a factory for silicon single crystals, in the case in which temperature sensors are employed for each of them, there is a problem in which a lot of work is required. Also, there is a problem in which a cost of the apparatus for manufacturing the silicon single crystal is increased by the provision of the temperature sensor.
  • Patent document 1 Japanese Unexamined Patent Application, First Publication No. 2000-143388.
  • Patent document 2 Japanese Unexamined Patent Application, First Publication No. 2001-220285.
  • the biggest factors to determine the temperature gradient G when pulling up the silicon single crystal are a structure of a heat insulating material, and a distance (hereinafter referred to as a gap) between a liquid surface of the molten silicon and a lower end of a heat shield member provided over the crucible.
  • a gap a distance between a liquid surface of the molten silicon and a lower end of a heat shield member provided over the crucible.
  • the position of the liquid surface of the molten silicon is adjusted.
  • the position of the crucible in the vertical direction varies inevitably between production batches in consequence of variations in a thickness of the used crucible (i.e.
  • a silicon single crystal can be manufactured with a stable product quality by compensating changes of the temperature gradient G which are generated by changes of the position of the crucible in the vertical direction.
  • the present invention has been accomplished in the light of the above problems, and one object is to provide an apparatus and a method for manufacturing a silicon single crystal in which the pulling rate is adjusted based on the position of the crucible in the vertical direction.
  • the other object is to provide a silicon single crystal manufactured using the apparatus or the method for manufacturing a silicon single crystal.
  • an apparatus for manufacturing a silicon single crystal of the present invention includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the crucible in a vertical direction; and a control device for controlling a pulling rate for the silicon single crystal by the pulling-up device, based on the detected position of the crucible.
  • the control device may calculate an average crucible position by taking an average of positions of the crucible in the vertical direction during manufacturing silicon single crystals over a plurality of times in the past, and the control device may control the pulling rate for the silicon single crystal based on an amount of positional deviation which is a value obtained by subtracting the average crucible position from the detected position of the crucible.
  • the control device may set the pulling rate for the silicon single crystal to be higher than an initial speed which is set in advance when the amount of positional deviation is positive, and the control device may set the pulling rate for the silicon single crystal to be lower than the initial speed when the amount of positional deviation is negative.
  • the control device may set the pulling rate for the silicon single crystal higher or lower within a range from 0% to 5% of the initial speed per 1 mm of the amount of positional deviation.
  • the control device may calculate a standard deviation ⁇ of the positions of the crucible in the vertical direction during manufacturing the silicon single crystals over a plurality of times in the past, and the control device may control the pulling rate for the silicon single crystal as the amount of positional deviation being 3 ⁇ when the amount of positional deviation is larger than 3 ⁇ .
  • a method for manufacturing a silicon single crystal of the present invention includes: a detecting step of detecting a position in a vertical direction of a crucible when pulling up a silicon single crystal from a molten silicon in the crucible to grow; and a control step of controlling a pulling rate of the silicon single crystal, based on the detected position of the crucible.
  • control step may further includes: a step of calculating an average crucible position by taking an average of positions of the crucible in the vertical direction during manufacturing silicon single crystals over a plurality of times in the past; and a step of controlling the pulling rate for the silicon single crystal, based on an amount of positional deviation which is a value obtained by subtracting the average crucible position from the detected position of the crucible.
  • the pulling rate for the silicon single crystal may be set to be higher than an initial speed which is set in advance when the amount of positional deviation is positive, and the pulling rate for the silicon single crystal may be set to be lower than the initial speed when the amount of positional deviation is negative.
  • the pulling rate for the silicon single crystal may be set higher or lower within a range from 0% to 5% of the initial speed per 1 mm of the amount of positional deviation.
  • the control step may further includes: a step of calculating a standard deviation a of the positions of the crucible in the vertical direction during manufacturing the silicon single crystals over a plurality of times in the past, and a step of controlling the pulling rate for the silicon single crystal as the amount of positional deviation being 3 ⁇ when the amount of positional deviation is larger than 3 ⁇ .
  • a silicon single crystal of the present invention is manufactured using any one of apparatuses and methods for manufacturing a silicon single crystal described above.
  • the pulling rate for the silicon single crystal is controlled based on the detected position of the crucible in the vertical direction.
  • the pulling rate for the silicon single crystal is controlled so as to compensate for the variations of the heat conduction.
  • V/G a value of a ratio of the pulling rate V of the silicon single crystal and a temperature gradient G in a vertical direction in a vicinity of a solid-liquid interface of the silicon single crystal
  • an average crucible position may be calculated by taking an average of positions of the crucible in the vertical direction during manufacturing silicon single crystals over a plurality of times in the past, and the pulling rate for the silicon single crystal may be controlled based on an amount of positional deviation which is a value obtained by subtracting the average crucible position from the detected position of the crucible.
  • the pulling rate for the silicon single crystal is minutely adjusted based on the relative change of the position of the crucible in the vertical direction, and as a result, it is possible to suppress the variations of the product quality of the silicon single crystal.
  • the pulling rate for the silicon single crystal may be set to be higher than an initial speed which is set in advance. In the case in which the amount of positional deviation is negative, the pulling rate for the silicon single crystal may be set to be lower than the initial speed.
  • the pulling rate for the silicon single crystal is set to be higher than the initial speed which is set in advance.
  • the proportion of the heat conduction from a side portion of the crucible is high, and the temperature gradient G becomes small.
  • the pulling rate for the silicon single crystal is set to be lower than the initial speed which is set in advance.
  • the pulling rate for the silicon single crystal may be set to be higher or lower within a range from 0% to 5% of the initial speed per 1 mm of the amount of positional deviation. That is, the pulling rate may be controlled to be limited to the above range. Thereby, it is possible to prevent the occurrence of a state in which a compensation amount for the pulling rate for the silicon single crystal becomes too large and the variations in the product quality of the silicon single crystal occur.
  • a standard deviation ⁇ of the positions of the crucible in the vertical direction during manufacturing the silicon single crystals over a plurality of times in the past may be calculated, and in the case in which the amount of positional deviation is larger than 3 ⁇ , the pulling rate for the silicon single crystal may be calculated as the amount of positional deviation being 3 ⁇ .
  • the pulling rate for the silicon single crystal is controlled based on the detected position of the crucible in the vertical direction, it is possible to manufacture a silicon single crystal with stable product quality.
  • silicon single crystals can be manufactured of which product quality is stabilized.
  • silicon single crystals can be manufactured of which diameters are 200 mm and external diameters of OSF rings are in a range from 13.2 cm to 14.4 cm.
  • dislocation cluster faults are reduced.
  • silicon single crystals can be manufactured of which product quality is stabilized.
  • silicon single crystals can be manufactured in which dislocation cluster faults are reduced by 5%, as compared with the results without using the apparatus and the method.
  • FIG. 1 is a figure showing an overall structure of an embodiment of the apparatus for manufacturing a silicon single crystal according to the present invention.
  • FIG. 2 is a figure showing an example of a relationship between the amount of the positional deviation of the crucible from the average crucible position, and compensation amount for the pulling rate.
  • FIG. 3 is a figure showing the position of the crucible, the compensation amount for the pulling rate, and the average crucible position during manufacturing a silicon single crystal according to an example of the present invention.
  • FIG. 4 is a figure showing an example of measurement results for external diameters of OSF rings in silicon wafers manufactured using the apparatus and the method for manufacturing a silicon single crystal of the present invention, and those manufactured without using the same.
  • FIG. 1 is a figure showing an overall structure of an apparatus for manufacturing a silicon single crystal according to the preferred embodiment of the present invention.
  • this apparatus of the preferred embodiment includes a main body portion 10 , a pulling-up device 11 , and a control device 12 .
  • a chamber 21 of the main body portion 10 there is provided a crucible 22 which receives molten silicon M, and an outer circumferential surface of this crucible 22 is covered over by a graphite susceptor 23 .
  • the crucible 2 is made from quartz or the like.
  • a bottom surface of the crucible 22 is fixed to an upper end of a support shaft 24 , and a lower portion of this support shaft 24 is connected to a crucible drive device which is not shown in the figure.
  • This crucible drive device not shown in the figures includes a first motor for rotation which rotates the crucible 22 in a horizontal position, and a motor for lifting and lowering the crucible 22 . By the actions of these two motors, the crucible 22 can rotate in the horizontal position, while it can be shifted in a upwards and a downwards directions.
  • a detecting device 25 which detects a position of the crucible 22 in a vertical direction.
  • this detecting device 25 may be a device such as a potentiometer or the like which detects the position of the crucible 22 in the vertical direction in a non contact manner, for example, by irradiating a laser light, ultrasonic waves or the like to an upper end of an outer circumferential portion of the crucible 22 . Results of this detection by the detecting device 25 is outputted to the control device 12 .
  • the outer circumferential surface of the crucible 22 is surrounded by a heater 26 which is arranged with a predetermined gap spacing between them.
  • An outer circumferential surface of this heater 26 is surrounded by an insulation tube 27 which is arranged with a predetermined gap spacing between them.
  • the heater 26 includes, for example, a high frequency heating device or a resistance heating device, and heats and melts a polycrystalline silicon of high purity charged into the crucible 22 into the molten silicon M.
  • Detection of the position of the crucible 22 in the vertical direction by the detecting device 25 is performed by taking a lower edge of a cone portion 30 b , or an upper edge of the heater 26 as a standard, or by taking a combination of these as a standard, and detecting a relative vertical position of an upper edge of the crucible 22 with respect to this standard.
  • each of the position in the vertical direction of the lower edge of the cone portion 30 b and the position in the vertical direction of the upper edge of the heater 26 taken as a standard may be different for each example of this apparatus, or may be different for each production batch. Therefore, for each production batch, when setting up for pulling up the silicon single crystal, the position taken as the standard is confirmed by the detecting device 25 .
  • the position of the crucible 22 on the support shaft 24 may be different for each example of this apparatus, or may be different for each production batch. Therefore, for each production batch, when setting up for pulling up the silicon single crystal, the position of the crucible 22 is confirmed by the detecting device 25 for this reason as well.
  • a casing 28 shaped as a circular cylinder is connected at an upper end of the chamber 21 .
  • a pulling-up device 11 is provided at an upper end portion of this casing 28 .
  • the pulling-up device 11 includes a pulling up head (not shown in the figure) which is provided so as to be able to rotate in a horizontal position, a second motor for rotation (also not shown in the figure) which rotates the pulling up head in the horizontal position, a pulling up wire W which extends vertically downwards from the pulling up head towards a rotational center of the crucible 22 , and a pulling up motor (likewise not shown in the figure) which is provided in the pulling up head and winds up or pays out the pulling up wire W.
  • a seed crystal 29 for being dipped into the molten silicon M and pulling up a silicon single crystal SI.
  • a heat shield member 30 which surrounds the outer circumferential surface of the silicon single crystal SI.
  • This heat shield member 30 is formed in a generally circular tubular shape, and it includes a tubular portion 30 a which intercepts radiant heat from the heater 26 , the cone portion 30 b which extends in a downwards and inwards direction from a lower edge of the tubular portion 30 a so that its diameter becomes progressively smaller, and a flange portion 30 c which extends outwards from an upper edge of the tubular portion 30 a in approximately the horizontal direction.
  • this heat shield member 30 is fixed within the chamber 21 so that the lower edge of the cone portion 30 b is positioned at just a predetermined distance above the surface of the molten silicon M.
  • This heat shield member 30 is made from graphite.
  • the control device 12 controls the pulling rate for the silicon single crystal SI based on the position in the vertical direction of the crucible 22 detected by the detecting device 25 .
  • the control device 12 stores positions of the crucible 22 in the vertical direction during the manufacturing procedure for a silicon single crystal SI over a plurality of times in the past (i.e. for a number of past production batches), and calculates an average crucible position by taking an average of them. And it controls the pulling rate for the silicon single crystal SI based on an amount of positional deviation which is a value obtained by subtracting the average crucible position from the detected position of the crucible obtained by the detecting device 25 .
  • the number of production batches n for obtaining the above described average crucible position is made to a predetermined number or more, since in the case in which it is too small, an accuracy is deteriorated. And it is also desirable for this number to be kept the other number or less. Because since in the case in which the number of production batches n is too large, crucible positions which vary greatly for example before and after changing the crucible 22 and the susceptor 23 are included, resulting in deterioration of the accuracy as well. It is preferable to set the number of the production batches n within a range from 3 to 25, and it is more preferable to set n to about 7 or 8. Here it is understood that the number of production batches performed in a single month with such an apparatus for manufacturing a silicon single crystal is about 10 to 20.
  • the control device 12 sets the pulling rate for the silicon single crystal to be higher than the above described initial speed, in the case in which the above described amount of the positional deviation is positive (in other words, in the case in which the crucible 22 is positioned at or above the average crucible position). In the case in which the amount of the positional deviation is negative (in other words, in the case in which the crucible 22 is positioned below the average crucible position), the control device 12 sets the pulling rate for the silicon single crystal to be lower than the above described initial speed.
  • the compensation amount for the pulling rate for the silicon single crystal SI is set to be larger than 5% of the initial speed, this compensation amount is too large. Therefore, according to this preferred embodiment of the present invention, the compensation amount for the pulling rate is limited to within 5% of the initial speed. Furthermore, in the case in which the crucible 22 is positioned above the average crucible position (i.e., in the case in which the above described amount of positional deviation is positive), the proportion of heat conduction from the bottom portion of the crucible 22 is increased, and the temperature gradient G becomes large. Considering these, the value of V/G is constrained to be within a predetermined range by setting the pulling rate for the silicon single crystal to be higher than the above described initial speed.
  • the proportion of heat conduction from the side portion of the crucible 22 is increased, and the temperature gradient G becomes small.
  • the value of V/G is constrained to be within the predetermined range by setting the pulling rate for the silicon single crystal to be lower than the above described initial speed.
  • the control device 12 calculates a standard deviation ⁇ of the positions of the crucible 22 in the vertical direction during the manufacturing procedure for the silicon single crystal SI over a plurality of times in the past (i.e. for a number of past batches). And, in the case in which the above described amount of the positional deviation is outside a range of ⁇ 3 ⁇ to +3 ⁇ , this amount of the positional deviation is set to ⁇ 3 ⁇ or +3 ⁇ respectively. This is to limit the compensation amount for the pulling rate for the silicon single crystal SI in the same manner as described above.
  • FIG. 2 is a figure showing an example of a relationship between the amount of the positional deviation of the crucible 22 from the average crucible position, and the compensation amount for the pulling rate.
  • the compensation amount for the pulling rate increases almost proportionally to the amount of the positional deviation.
  • the compensation amount for the pulling rate decreases almost proportionally to the amount of positional deviation.
  • the compensation amount for the pulling rate is set to the same value as that when the amount of positional deviation is +3 ⁇ .
  • the compensation amount for the pulling rate is set to the same value as that when the amount of positional deviation is ⁇ 3 ⁇ .
  • the polycrystalline silicon raw material charged in the crucible 22 is heated up with the heater 26 and is melted to molten silicon M, and a temperature of this molten silicon M is heated to and kept a predetermined temperature.
  • the position of the crucible 22 in the vertical direction is set so that a gap between a liquid surface of the molten silicon M filled in the crucible 22 and a lower end of the heat shield member 30 (the lower edge of its cone portion 30 b ) provided at the upper portion of the crucible 22 becomes equal to a predetermined distance.
  • a seed crystal 29 is fixed to a lower tip of the pulling up wire W, and the pulling up wire W is lowered downwards so that a lower end of the seed crystal 29 comes into contact with a surface of the molten silicon M.
  • the pulling up upwards of the silicon single crystal SI is started from this state.
  • the silicon single crystal SI which is being pulled out is rotated in the opposite direction at a rotational speed of for example about 1 to 25 min ⁇ 1 .
  • the silicon single crystal SI it may also be the case that the crucible 22 and the silicon single crystal SI are both rotated in the same direction.
  • the results from the detecting device 25 of its detection of the position of the crucible 22 in the vertical direction are outputted to the control device 12 during the process of pulling up the silicon single crystal SI.
  • the control device 12 calculates the amount of the positional deviation of the crucible 22 by subtracting this detected result from the average crucible position.
  • the control device 12 calculates the amount of the positional deviation of the crucible 22 by subtracting this detected result from the average crucible position.
  • the control device 12 calculates compensation amount for the pulling rate for the silicon single crystal SI by using the amount of the positional deviation which has been calculated, and the relationship between the amount of positional deviation of the crucible 22 from the average crucible position and the compensation amount for the pulling rate shown in FIG. 2 .
  • the pulling rate is obtained by compensating the initial speed which has been set in advance.
  • a control signal which corresponds to this pulling rate is outputted to the pulling-up device 11 , and thereby the pulling rate for the silicon single crystal SI is controlled.
  • the pulling rate of the silicon single crystal is set to be higher than the above described initial pulling rate.
  • the pulling rate of the silicon single crystal is set to be lower than the above described initial pulling rate.
  • control device 12 when manufacturing the silicon single crystal SI in this manner, the control device 12 also performs control by minutely adjusting the position of the liquid surface of the molten silicon M so as to keep constant the distance (the gap) between the liquid surface of the molten silicon M charged in the crucible 22 , and the lower end of the heat shield member 30 (the lower edge of its cone portion 30 b ) provided at the upper portion of the crucible 22 .
  • FIG. 3 is a figure showing the crucible position, the compensation amount for the pulling rate, and the like during manufacturing a silicon single crystal according to the preferred embodiment of the present invention.
  • the batch number is shown along the horizontal axis, while the compensation amount for the pulling rate, and the average crucible position and the actual position of the crucible are shown along the vertical axis.
  • the position of the crucible 22 in the vertical direction does not change excessively from batch to batch, but it is not constant and changes little by little between batches. Also, when the average crucible position (the crucible position averaged over the last seven batches) is considered, with increase of the batch number, this position changes gradually in a constant direction (in the example shown in FIG. 3 , the upwards direction).
  • the compensation amount for the pulling rate and the position of the crucible 22 in the vertical direction are compared together, it is understood that there is also a tendency for the compensation amount for the pulling rate to change according to a change of the position of the crucible 22 in the vertical direction.
  • the compensation amount for the pulling rate assumes a negative value.
  • the compensation amount for the pulling rate assumes a positive value.
  • FIG. 4 is a figure showing an example of measurement results for external diameters of OSF rings in silicon wafers manufactured using the apparatus and the method for manufacturing a silicon single crystal of the present invention, and those manufactured without using the same.
  • the batch number is shown along the horizontal axis
  • the external diameter of the OSF ring (its average total length) is shown along the vertical axis.
  • results of which the batch number is twelve or less are obtained without using the apparatus and the method for manufacturing a silicon single crystal according to the present invention.
  • Results of which the batch number is thirteen or larger are obtained using the apparatus and the method for manufacturing a silicon single crystal according to the present invention.
  • the variation in the distribution of the OSF diameter is less, as compared with the results without using the apparatus and the method. Accordingly, it is possible to stabilize the product quality.
  • dislocation cluster faults are reduced by 5%, as compared with the results without using the apparatus and the method.
  • the present invention has been described above in terms of preferred embodiments thereof, it should not be considered as being limited to the above described contents; it may be freely varied, within its legitimate and proper scope.
  • the application of the above described preferred embodiments to the case of manufacturing a silicon single crystal SI without applying any magnetic field to the molten silicon in the crucible 22 is disclosed by way of example, and is not limitative of the present invention; it would also be acceptable to manufacture the silicon single crystal SI while applying a horizontal magnetic field or a cusp magnetic field to the molten silicon.
  • the present invention is not particularly limited as to the diameter or the size of the silicon single crystal which is manufactured thereby; it would be possible to apply the present invention to the manufacture of a silicon single crystal having any desired diameter.

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JP4784401B2 (ja) * 2006-05-30 2011-10-05 株式会社Ｓｕｍｃｏ シリコン単結晶の育成プロセスにおける融液の液面位置監視装置
JP5047227B2 (ja) * 2009-05-27 2012-10-10 ジャパンスーパークォーツ株式会社 シリコン単結晶の製造方法及びシリコン単結晶引き上げ装置
US11618971B2 (en) * 2020-09-29 2023-04-04 Sumco Corporation Method and apparatus for manufacturing defect-free monocrystalline silicon crystal

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